JIANG De-long, WANG Xin, XIANG Rong, et al. Deposition Rate of Thin Silicon Oxide Film by Magnetron Sputtering Method[J]. Chinese Journal of Luminescence, 2009,30(6):888-891.
JIANG De-long, WANG Xin, XIANG Rong, et al. Deposition Rate of Thin Silicon Oxide Film by Magnetron Sputtering Method[J]. Chinese Journal of Luminescence, 2009,30(6):888-891.DOI:
Silicon oxide is one of the thin films well known in semiconductor industry. It is commonly obtained by chemical vapor deposition (CVD). For this deposition technique
the great disadvantages are high temperature and dangerous reactants as silane (SiH
4
)
dichlo-rosilane (SiH
2
Cl
2
)
ammonia (NH
3
). The reactive magnetron sputtering is a powerful technique for deposition of many different types of films at low deposition temperature. Some of organic (carbon)
metallic (tungsten
aluminum
nickel
cobalt
etc.
)
semiconductor (silicon) and thin dielectric (aluminum oxide) films can commonly be obtained by this method
and furthermore
the advantage is utilization of non-toxic gases
for example
argon
oxygen and nitrogen
high-purity target (99.99%) and it is possible to obtain high deposition rate. In this paper
the silicon oxide films were deposited on quartz substrate by radio-frequency (RF) reactive magnetron sputtering method
the influences of radio-frequency power
oxygen concentration and sputtering pressure on the deposition rate of the silicon oxide film was investigated. It was found that the deposition rate increases with increasing the RF power
but firstly increases and then decreases with increasing oxygen concentration. The deposition rate changed little when the sputtering pressure changed in 0.4~0.8 Pa
and decreases drastically if the pressure is beyond 0.8 Pa. Finally
it was detailedly discused why the deposition rate of silicon oxide films at different growth condition changes.
关键词
氧化硅薄膜磁控溅射
Keywords
silicon oxidethin filmmagnetron sputtering
references
. Treichel H, Braun R, Gabric Z, et al. Planarized low-stress oxide/nitride passivation for ULSI devices [J]. J. Phys. Ⅱ, 1991, 2 :839-846.
. Bartle D C, Andrews D C, Grange J D, et al. Plasma enhanced deposition of silicon nitride for use as an encapsulant for silicon ion-implanted gallium arsenide [J]. Vacuum, 1984, 34 (1-2):315-320.
. Kahler U, Hofmeister H. Silicon nanocrystallites in buried SiO<em>x layers via direct wafer bonding [J]. Appl. Phys. Lett., 1999, 75 (5):641-643.
. Inokuma T, Wakayama Y, Muramoto T, et al. Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiO<em>x films [J]. J. Appl. Phys., 1998, 83 (4):2228-2234.
. Zamboma L S, Mansano R D, Mousinho A P. Low-temperature deposition of silicon oxide and silicon nitride by reactive magnetron sputtering [J]. Microelectronics Journal, 2009, 40 (1):66-69.