缓冲层生长温度对In<SUB>0.82</SUB>Ga<SUB>0.18</SUB>As 薄膜结构及电学性能的影响

张铁民; 缪国庆; 宋 航; 蒋 红; 李志明; 傅 军; 颜丽娜

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缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响

论文 | 更新时间：2020-08-12

- 缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响
- Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique
- 发光学报 2009年30卷第6期页码：787-791
- 作者机构：
  
  1. 海南师范大学物理与电子工程学院
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.1;O472.4
- 收稿：2009-02-23，
  
  修回：1900-1-2，
  
  网络首发：2009-12-30，
  
  纸质出版：2009-12-30
- 稿件说明：
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张铁民, 缪国庆, 宋航, 等. 缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响[J]. 发光学报, 2009,30(6):787-791.

ZHANG Tie-min, MIAO Guo-qing, SONG Hang, et al. Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique[J]. Chinese Journal of Luminescence, 2009, 30(6): 787-791.
张铁民, 缪国庆, 宋航, 等. 缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响[J]. 发光学报, 2009,30(6):787-791. DOI：

ZHANG Tie-min, MIAO Guo-qing, SONG Hang, et al. Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique[J]. Chinese Journal of Luminescence, 2009, 30(6): 787-791. DOI：

摘要

采用低压金属有机化学气相沉积(LP-MOCVD)技术

两步生长法在InP衬底上制备In

0.82

0.18

As材料。研究缓冲层的生长温度对In

0.82

0.18

As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件

仅改变缓冲层生长温度(分别为410

430

450

470 ℃)

且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能

测量四个样品的拉曼散射光谱

得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53

1.52

1.39和1.76。测量样品的霍耳效应表明

载流子浓度随缓冲层生长温度变化而改变

同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In

0.82

0.18

As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。

Abstract

paper

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Keywords

references

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缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In0.82Ga0.18As with Two Step Growth Technique

DOI：

摘要

Abstract

关键词

Keywords

references

缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响

Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique