缓冲层生长温度对In<SUB>0.82</SUB>Ga<SUB>0.18</SUB>As 薄膜结构及电学性能的影响

张铁民; 缪国庆; 宋 航; 蒋 红; 李志明; 傅 军; 颜丽娜

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缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响

论文 | 更新时间：2020-08-12

- 缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响
- Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique
- 发光学报 2009年30卷第6期页码：787-791
- 作者机构：
  
  1. 海南师范大学物理与电子工程学院,海南海口,571158
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.1;O472.4
- 纸质出版日期：2009-12-30，
  
  网络出版日期：2009-12-30，
  
  收稿日期：2009-2-23，
  
  修回日期：1900-1-2，
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张铁民, 缪国庆, 宋航, 等. 缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响[J]. 发光学报, 2009,30(6):787-791.

ZHANG Tie-min, MIAO Guo-qing, SONG Hang, et al. Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique[J]. Chinese Journal of Luminescence, 2009,30(6):787-791.
张铁民, 缪国庆, 宋航, 等. 缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响[J]. 发光学报, 2009,30(6):787-791. DOI：

ZHANG Tie-min, MIAO Guo-qing, SONG Hang, et al. Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique[J]. Chinese Journal of Luminescence, 2009,30(6):787-791. DOI：

摘要

采用低压金属有机化学气相沉积(LP-MOCVD)技术

两步生长法在InP衬底上制备In

0.82

0.18

As材料。研究缓冲层的生长温度对In

0.82

0.18

As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件

仅改变缓冲层生长温度(分别为410

430

450

470 ℃)

且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能

测量四个样品的拉曼散射光谱

得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53

1.52

1.39和1.76。测量样品的霍耳效应表明

载流子浓度随缓冲层生长温度变化而改变

同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In

0.82

0.18

As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。

Abstract

0.82

0.18

As was grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on InP substrates with two-step growth technique. Effect of buffer layer growth temperature on structural and electrical properties of In

0.82

0.18

As was analyzed

which was characterized by scanning electron microscopy (SEM)

Raman scattering and Hall measurement. The results showed that the properties of epilayers have close relation to the buffer layer growth temperature and the optimum buffer layer growth temperature was about 450 ℃.

关键词

铟镓砷金属有机化学气相沉积缓冲层生长温度

Keywords

In0.82Ga0.18AsMOCVDbuffergrowth temperature

references

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缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In0.82Ga0.18As with Two Step Growth Technique

DOI：

摘要

Abstract

关键词

Keywords

references

缓冲层生长温度对In_0.82Ga_0.18As 薄膜结构及电学性能的影响

Effect of Buffer Layer Growth Temperature on Structural and Electrical Properties of In_0.82Ga_0.18As with Two Step Growth Technique