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福州大学 物理与信息工程学院, 福建 福州 350002
纸质出版日期:2009-10-30,
网络出版日期:2009-10-30,
收稿日期:2008-12-8,
修回日期:1900-1-2,
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曾祥耀, 叶 芸, 袁军林, 等. 场发射显示Ag膜电极的制备及其电性能[J]. 发光学报, 2009,30(5):706-711.
ZENG Xiang-yao, YE Yun, YUAN Jun-lin, et al. Preparation and Electric Performance of Ag Films as Field Emission Display Electrodes[J]. Chinese Journal of Luminescence, 2009,30(5):706-711.
场发射显示(FED)被认为是CRT的平板化
受到人们关注。作者采用直流磁控溅射法
在Al
2
O
3
过渡层上制备面心立方结构的Ag多晶薄膜。通过XRD、SEM、AFM测试分析发现
溅射功率分为两个区域
在溅射功率不高于2.8 kW时
沉积速率随着功率线性增大
得到Ag膜晶粒尺寸均一
薄膜电阻率逐步降低;溅射功率高于2.8 kW后
沉积速率没有显著增大
出现较多的大晶粒
电阻率升高
并且从理论上给出了解释。综合来看
溅射功率在2.8 kW所制备的Ag膜微观结构质量达到最佳
电阻率也达到最小值。
By using direct current (DC) magnetron sputtering method
silver films were deposited on large area plane glasses
which were pre-deposited with Al
2
O
3
films with thickness of 25 nm. The relationships between sputtering power and deposited rate
surface microstructure and electric resistivity of silver films were studied. When sputtering power is lower than 2.8 kW
the deposited rate increases steadily with sputtering power
and homogeneous silver films with decreasing electric resistivity were obtained. However
silver films with abnormally large grains and increasing electric resistivity were fabricated when sputtering power is more than 2.8 kW. Silver film with the best microstructure and the lowest electric resistivity is obtained at the sputtering power of 2.8 kW.
银薄膜磁控溅射功率微观结构电阻率
silver filmmagnetron sputtering powersurface microstructureelectric resistivity
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