带有InGaAs覆盖层的InAs量子点红外探测器材料的发光与光电响应

您当前的位置：

首页 >

文章列表页 >

带有InGaAs覆盖层的InAs量子点红外探测器材料的发光与光电响应

论文 | 更新时间：2020-08-12

|

- 带有InGaAs覆盖层的InAs量子点红外探测器材料的发光与光电响应
- InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE
- 发光学报 2009年30卷第2期页码：209-213
- 作者机构：
  
  1. 首都师范大学物理系
  2. 中国科学院物理研究所北京凝聚态物理国家实验室
- 作者简介：
  
  [ "" ]
  [ "" ]
  [ "" ]
  [ "" ]
  [ "" ]
  [ "" ]
  [ "" ]
  [ "" ]
- 基金信息：
- DOI：
  中图分类号： O482.31;O484.4+1
- 纸质出版日期：2009-4-30，
  
  网络出版日期：2009-4-30，
  
  收稿日期：2008-8-25，
  
  修回日期：1900-1-2，
扫描看全文
吴殿仲, 王文新, 杨成良, 等. 带有InGaAs覆盖层的InAs量子点红外探测器材料的发光与光电响应[J]. 发光学报, 2009,30(2):209-213.

InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE[J]. Chinese Journal of Luminescence, 2009,30(2):209-213.
吴殿仲, 王文新, 杨成良, 等. 带有InGaAs覆盖层的InAs量子点红外探测器材料的发光与光电响应[J]. 发光学报, 2009,30(2):209-213. DOI：

InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE[J]. Chinese Journal of Luminescence, 2009,30(2):209-213. DOI：

摘要

利用分子束外延技术(MBE)

在GaAs(001)衬底上自组织生长了不同结构的InAs量子点样品

并制备了量子点红外探测器件。利用原子力显微镜(AFM)和光致发光(PL)光谱研究了量子点的表面结构、形貌和光学性质。渐变InGaAs层的插入有效地释放了InAs量子点所受的应力

抑制了量子点中In组分的偏析

提高了外延层的生长质量

降低了势垒高度

使InAs量子点荧光波长红移。伏安特性曲线和光电流(PC)谱结果表明

生长条件的优化提高了器件的红外响应

具有组分渐变的InGaAs层的探测器响应波长发生明显红移。

Abstract

paper

关键词

光致发光分子束外延InAs量子点InGaAs渐变层红外探测器

Keywords

photoluminescencemolecular beam epitaxyInAs quantum dotsInGaAs graded component layerinfrared detector device

references

. Ryzhii V. The theory of quantum-dot infrared phototransistors [J]. Semicond. Sci. Technol., 1996, 11 (5):759-765.

. Wemer Seifert, Niclas Carlsson, Mark Miller, et al. In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode [J]. Prog. Crystal Growth and Charact. Mater., 1996, 33 (44):423-471.

. Yoffe A D. Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems [J]. Advances in Phys., 2001, 50 (1):1-208.

. Richard Notzel. Self-organized growth of quantum-dot structures [J]. Semicond. Sci. Technol., 1996, 11 (10): 1365-1379.

. Patella1 F, Sgarlata1 A, Arciprete F, et al. Self-assembly of InAs and Si/Ge quantum dots on structured surfaces [J]. J. Phys.: Condensed Matter, 2004, 16 (49):1503-1534.

. Passow T, Li S, Feinugle P,et al. Systematic investigation into the influence of growth conditions on InAs/GaAs quantum dot properties [J]. J. Appl. Phys., 2007, 102 (7):073511-1-9.

. Jia Guozhi, Yao Jianghong, Shu Yongchun, et al. Optical propertics and structure of InAs quantum dots in near-infrared band [J]. Chin. J. Lumin. (发光学报), 2007, 28 (1):104-108 (in Chinese).

. Seravalli L, Minelli M, Frigeri P, et al. The effect of strain on tuning of light emission energy of InAs InGaAs quantum-dot nanostructures [J]. Appl. Phys. Lett., 2003, 82 (14):2341-2343.

. Maree P M J, Barbour J C, Van der Veen J F, et al. Generation of misfit dislocations in semiconductors [J]. J. Appl. Phys., 1987, 62 (11):4413-4420.

. Seravalli L, Frigeri P, Minelli M, et al. Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 μm [J]. Appl. Phys. Lett., 2005, 87 (6):063101-1-3.

. Tung Pohsieh, Chiu Pei-Chin, Chyia Jen-Inn, et al. 1.55 μm emission from InAs quantum dots grown on GaAs [J]. Appl. Phys. Lett., 2005, 87 (15):151903-1-3.

. Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa, et al. Luminescence in excess of 1.5 μm at room-temperature of InAs quantum dots capped by a thin InGaAs strain-reducing layer [J]. J. Crystal Growth, 2002, 237-239 :1296-1300.

. Kong Meiying, Zeng Yiping, Li Jinmin, et al. Tuning of Infrared absorption wavelength of MBE InGaAs/GaAs quantum dots [J]. Chin. J. Semicond. (半导体学报), 2003, 24 (3):78-80 (in Chinese). InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE WU Dian-zhong1, WANG Wen-xin2, YANG Cheng-liang2, JIANG Zhong-wei2, GAO Han-chao2, TIAN Hai-tao2, CHEN Hong2, JIANG Hong-wei1 (1. Department of Physics, Capital Normal University, Beijing 100048, China; 2. Beijing National Laboratory Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China) Abstract: Self-assembled InAs quantum dots (QDs) capping with the InGaAs layer of the graded component are grown by molecular beam epitaxy (MBE) on GaAs (001). Surface structure, morphology and optical properties of QDs were studied by atomic force microscopy (AFM) and photoluminescence spectroscopy (PL). The insertion of InGaAs layer enhances the quality of epitaxial layer, relaxes the stress of InAs quantum dots, changes the energy level of QDs and suppress the component segregation of indium from the quantum dots. Characteristic of devices were studied byphotocurrent spectra(PC) and volt-ampere characteristic curves. Wavelength red-shift of QDs device with InGaAs graded composition layer was determined by PL and PC curves. Key words: InAs quantum dots; InGaAs graded component layer; photoluminescence; molecular beam epitaxy; infrared detector device

0

浏览量

33

下载量

2

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

相关文章

分子束外延生长的极性与非极性BeZnO薄膜的比较研究

高质量ZnO及BeZnO薄膜的发光性质

近红外波段InAs量子点结构与光学特性

深紫外AlGaN基多量子阱结构中载流子辐射复合的局域特征

Sr₆Lu₂Al₄O₁₅∶Tb³⁺荧光粉的发光特性

相关作者

王玉超

吴天准

陈明明

苏龙兴

张权林

汤子康

王玉超

吴天准

相关机构

中山大学理工学院光电材料国家重点实验室

中国科学院深圳先进技术研究院

香港科技大学物理系, 香港, 清水湾九龙

香港科技大学物理系

南开大学, 弱光非线性光子学材料先进技术及制备教育部重点实验室

地址：长春市经济技术开发区东南湖大路3888号邮编：130033
联系电话：0431-86176862 Email：fgxbt@126.com
本系统由Light学术出版中心、北京北大方正电子有限公司共建吉ICP备11002662号-17 京公网安备11010802024621
本系统建议在Chrome、 IE9+ 以上版本浏览器阅读本站内容，360浏览器请切换至极速模式
Cookies帮助我们提供服务并提供个性化体验。使用本网站，即表示您同意我们使用Cookies

⁰