DU Yu-fan, YI Li-xin, WANG Shen-wei, et al. Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO2 Superlattices after Ce3+ Implantation[J]. Chinese Journal of Luminescence, 2009,30(3):417-420.
DU Yu-fan, YI Li-xin, WANG Shen-wei, et al. Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO2 Superlattices after Ce3+ Implantation[J]. Chinese Journal of Luminescence, 2009,30(3):417-420.DOI:
superlattices samples were prepared on Si substrates by electron beam evaporation
and the thicknesses of SiO layers are 2 nm and 4 nm
4 nm for all the SiO
2
layers. The samples were annealed in nitrogen atmosphere at high temperature subsequently. And then
Ce
3+
with a dose of 2.0×10
14
cm
-2
and 2.0×10
15
cm
-2
respectively was implanted into these samples with formed Si nanocrystals. After Ce
3+
doped
the samples were re-annealing at 600 ℃. The photoluminescence (PL) spectra were observed by the fluorescence spectrometry. The PL spectra showed that the PL intensities of samples were not only dependent on the re-annealing temperature and the dose of Ce
3+
but also dependent on the size of nc-Si. The experiment results proved that when the size of nc-Si is 4 nm; the effect of energy transfer between Ce
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