LI Mei, LI Hui, WANG Yu-xia, LIU Guo-jun, QU Yi. Research on Material Characteristics of GaAlAs/GaAs Superluminence Diodes[J]. Chinese Journal of Luminescence, 2007,28(6): 885-889
LI Mei, LI Hui, WANG Yu-xia, LIU Guo-jun, QU Yi. Research on Material Characteristics of GaAlAs/GaAs Superluminence Diodes[J]. Chinese Journal of Luminescence, 2007,28(6): 885-889DOI:
Superluminescent light emitting diode(SLD) is a kind of semiconductor light source with high performance comparing to those of laser diode and light emitting diode.One of the key device in fibre optic gyroscope systems is a superluminescent diode(SLD).In this paper
non-uniform well-thickness multi-quantum wells structure was adopted to widen the output spectrum of superluminescent diode.The epitaxial material was fabricated by molecular beam epitaxy(MBE) technique.Optical and structural characteristic of the film was studied by photoluminescence(PL) at different temperature
X-ray double crystal diffraction and electroche-mical C-Vprofiling method.The radition wavelength of 844 nm was obtained on PLspectrum(300 K).The experimental results of X-ray double crystal rocking curve and low temperature(10~300 K) PLshow that the structure designed for superluminescent diode have been realized.The spectral FWHM over 26 nm
CW output power of over 6 mWhave been achieved at operating current of 140 mA.