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1. 北京钢铁研究总院, 测试研究所 北京,100081
2. 北京化工厂荧光分厂, 北京100021
3. 清华大学材料科学院 北京,100084
纸质出版日期:2000-2-29,
收稿日期:1999-4-10,
修回日期:1999-8-23,
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贾冬冬, 吴伯群, 姜联合, 朱静. Ca<sub>0.9</sub>Sr<sub>0.1</sub>S:Bi<sup>3+</sup>,Tm<sup>3+</sup>荧光材料的光学性质[J]. 发光学报, 2000,21(1): 43-47
JIA Dong-dong, WU Bo-qun, JIANG Lian-he, ZHU Jing. Luminescent Properties of Ca<sub>0.9</sub>Sr<sub>0.1</sub>S:Bi<sup>3+</sup>,Tm<sup>3+</sup> Phosphor[J]. Chinese Journal of Luminescence, 2000,21(1): 43-47
贾冬冬, 吴伯群, 姜联合, 朱静. Ca<sub>0.9</sub>Sr<sub>0.1</sub>S:Bi<sup>3+</sup>,Tm<sup>3+</sup>荧光材料的光学性质[J]. 发光学报, 2000,21(1): 43-47 DOI:
JIA Dong-dong, WU Bo-qun, JIANG Lian-he, ZHU Jing. Luminescent Properties of Ca<sub>0.9</sub>Sr<sub>0.1</sub>S:Bi<sup>3+</sup>,Tm<sup>3+</sup> Phosphor[J]. Chinese Journal of Luminescence, 2000,21(1): 43-47 DOI:
Ca
0.9
Sr
0.1
S:Bi
3+
Tm
3+
是一种复合掺杂复合基质荧光材料。在此给出了440nm和520nm发射的激发谱
250nm到350nm的激发的发射谱
以及400nm到520nm的荧光衰减谱。紫外光区域的激发谱表明
Ca
0.9
Sr
0.1
S:Bi
3+
Tm
3+
有两个主要的能量传递体系
325nm的复合掺杂中心Tm
3+
的CT跃迁激发体系
和Bi
3+
的自身激发体系。紫外激发的荧光发射谱的中心发射波长在453nm处。在电子和空穴陷阱同时存在时
I
t
=
I
0
[(1+γ
et
)(1+γ
ht
)]
-n
对于Ca
0.9
Sr
0.1
S:Bi
3+
Tm
3+
材料γ
h
=0.0168
γ
e
=0.0001
n=1.1。Tm
3+
的电子陷阱深度约为0.5eV
比复合基质中的正离子空位的空穴陷阱要深。考虑复合基质材料的线性关系
电子陷阱的深度可表示为D
e
=β
e
-α
x
;空穴陷阱的深度可表示为
D
h
=(β
hc
-α
hx
)x+(β
hs
-α
hx
)(1-x)。
Ca
0.9
Sr
0.1
S:Bi
3+
Tm
3+
is a kind of codoped host mixing material. In this work
excitation spectra monitored at different wavelength from 440nm to 520nm
also emission spectra excited at different wavelength from 250nm to 350nm were obtained. Decay curves of the afterglow were measured at different emission position from 440nm to 520nm. UV excitation spectra showed that Tm
3+
's contribution to the Bi
3+
ion's
3
P
1
to
1
S
0
emission (at 453nm) came from 325nm of charge transfer transition. The Tm
3+
also acted as an electron-trapping center with its trap depth about 0.5eV. The decay kinetics of afterglow of the materials having both electron and hole trapping centers may be described as
I
t
=
I
0
[(1+γ
et
)(1+γ
ht
)]
-n
. In the case of Ca
0.9
Sr
0.1
S:Bi
3+
Tm
3+
γ
h
=0.0168
γ
e
=0.0001
n=1.1. Considering the linear relationship of the host mixing materials
the depth of the electron traps and the hole-traps can be written as
D
e
=β
e
-α
x
and
D
h
=(β
hc
-α
h
x)x+( β
hs
-α
h
x )(1-x ).
荧光粉复合基质复合掺杂
luminescent powderhost mixedcodoping
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