Zhang Qilin, Zhang Ji, Zhao Yongjun, Li Yun, Liang Chunguang, Liu Yanfei, Yang Ruilin. RIE ETCHING AND FABRICATING OF GaN p-n JUNCTION BLUE LEDS[J]. Chinese Journal of Luminescence, 1999,20(1): 94-96
Zhang Qilin, Zhang Ji, Zhao Yongjun, Li Yun, Liang Chunguang, Liu Yanfei, Yang Ruilin. RIE ETCHING AND FABRICATING OF GaN p-n JUNCTION BLUE LEDS[J]. Chinese Journal of Luminescence, 1999,20(1): 94-96DOI:
The reactive ion etching (RIE) process at room temperature (RT) was developed to etch GaN grown on sapphire substrates and the p-n junction GaN LEDs were successfully fabricated. BCl
3
/Cl
2
was used as the etching chemistry. The typical etching rate is about 200~300nm/min with selectivity to resist mask above 5:1.