Wang Xinghua, Li Guohua, Li Chengfang, Li Yuexia, Cheng Wenchao, Song Aiming, Liu Jian, Wang Zhiming. PREPARATION OF GaAs/AlGaAs QUANTUM DOTS AND THEIR PHOTOLUMINESCENCE CHARACTERISTICS[J]. Chinese Journal of Luminescence, 1998,19(3): 202-206
Wang Xinghua, Li Guohua, Li Chengfang, Li Yuexia, Cheng Wenchao, Song Aiming, Liu Jian, Wang Zhiming. PREPARATION OF GaAs/AlGaAs QUANTUM DOTS AND THEIR PHOTOLUMINESCENCE CHARACTERISTICS[J]. Chinese Journal of Luminescence, 1998,19(3): 202-206DOI:
GaAs/AlGaAs quantum dots were made by Electron Beam Lithography (EBL) and Reactive Ion Etching(RIE) on GaAs/AlGaAs quantum well wafers. Their photoluminescence shows blue-shift
the amount of blue-shift increases with the decrease of quantum dot size.