高温热处理a面AlN表面形貌演变机理 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "高温热处理" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面AlN表面形貌演变机理" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Mechanism of " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN Surface Morphology Evolution by High Temperature Annealing" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "隋", "givenname": "佳恩", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SUI", "givenname": "Jia-en", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "隋佳恩(1995-)，男，山东威海人，硕士研究生， 2018年于山东大学获得学士学位，主要从事宽禁带半导体材料生长的研究。E-mail: suijiaen18@mails.ucac.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351024&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351025&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351027&type=" } ], "data": [ [ { "name": "text", "data": "隋佳恩" }, { "name": "text", "data": "(1995-)，男，山东威海人，硕士研究生， 2018年于山东大学获得学士学位，主要从事宽禁带半导体材料生长的研究。E-mail: " }, { "name": "text", "data": "suijiaen18@mails.ucac.ac.cn" } ] ] } ], "email": "suijiaen18@mails.ucac.ac.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "贲", "givenname": "建伟", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "BEN", "givenname": "Jian-wei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "臧", "givenname": "行", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZANG", "givenname": "Hang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "蒋", "givenname": "科", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "JIANG", "givenname": "Ke", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "山丽", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Shan-li", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "郭", "givenname": "冰亮", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "GUO", "givenname": "Bing-liang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "陈", "givenname": "洋", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHEN", "givenname": "Yang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "石", "givenname": "芝铭", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SHI", "givenname": "Zhi-ming", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "贾", "givenname": "玉萍", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "JIA", "givenname": "Yu-ping", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "黎", "givenname": "大兵", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Da-bing", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "孙", "givenname": "晓娟", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SUN", "givenname": "Xiao-juan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "zh", "text": "Corresponding Author, E-mail: sunxj@ciomp.ac.cn", "data": [ { "name": "text", "data": "Corresponding Author, E-mail: sunxj@ciomp.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "孙晓娟(1981-)，女，辽宁朝阳人，博士，研究员，2012年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事氮化物宽禁带半导体材料与光电器件的研究。E-mail: sunxj@ciomp.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351030&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351033&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351036&type=" } ], "data": [ [ { "name": "text", "data": "孙晓娟" }, { "name": "text", "data": "(1981-)，女，辽宁朝阳人，博士，研究员，2012年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事氮化物宽禁带半导体材料与光电器件的研究。E-mail: " }, { "name": "text", "data": "sunxj@ciomp.ac.cn" } ] ] } ], "email": "sunxj@ciomp.ac.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室, 吉林 长春 　 130033", "data": [ { "name": "text", "data": "中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室, 吉林 长春 　 130033" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China", "data": [ { "name": "text", "data": "State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院大学 材料科学与光电工程中心, 北京 　 100049", "data": [ { "name": "text", "data": "中国科学院大学 材料科学与光电工程中心, 北京 　 100049" } ] }, { "lang": "en", "label": "2", "text": "Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China", "data": [ { "name": "text", "data": "Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "北京北方华创微电子装备有限公司, 北京 　 100049", "data": [ { "name": "text", "data": "北京北方华创微电子装备有限公司, 北京 　 100049" } ] }, { "lang": "en", "label": "3", "text": "Beijing NAURA Microelectronics Equipment, Beijing 100049, China", "data": [ { "name": "text", "data": "Beijing NAURA Microelectronics Equipment, Beijing 100049, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "非极性" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面AlN(" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN)能够从根本上解决极性AlN引起的量子限制斯塔克效应问题，是提升AlGaN发光器件效率的有效途径。但是，非极性AlN生长面临更大的挑战，目前难以实现低缺陷密度、高平整表面的非极性" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN。高温热处理是一种提高AlN质量的有效方法，但在热处理过程中，非极性" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN的表面形貌演变的物理机理尚不明确，直接影响了" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面改善与质量提升。本研究通过对" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜在不同条件下进行高温热处理，对样品的表面形貌演变过程进行了表征与分析，并结合第一性原理计算，揭示了高温热处理对非极性" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面的影响及其物理机理。结果表明，在高温热处理过程中Al、N原子更趋向于从" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面与" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面分解，而在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面吸附，使得" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN样品表面在高温热处理过程中出现了沿" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "轴方向的高取向性条纹原子台阶形貌，进而提高" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN材料质量。本研究为实现高质量非极性" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN材料及紫外发光器件提供了重要基础。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Nonpolar " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN is the fundamental method to eliminate quantum-confined Stark effect, and further improve the efficiency of AlGaN-based devices such as light-emitting diodes. However, it is hard to obtain high quality nonpolar " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN on heterogeneous substrates because the large and inhomogeneous mismatch between the heterogeneous substrate and the epitaxial layer. High temperature annealing is an effective and repeatable method to improve the quality of AlN templates. However, the physical mechanism is still not clear on how the high temperature annealing method effects the surface morphology of non-polar AlN, which affects the quality improvement of " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN. In this work, the surface evolution of the " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN with high temperature annealing has been investigated and the mechanism of how the thermal annealing effects on the surface evolution has been explored both by experiment and first-principles calculations. It is found that the Al/N atoms tend to decompose along " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-/" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "-plane AlN and reabsorb along " }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-plane AlN, which result in the phenomenon that the area of ordered stripes along " }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-axis increases with higher annealing temperature or longer annealing time. The research will provide deeper understanding on the mechanism of the HTA effect on " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN, which will be benefit to the fabrication of " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN related devices." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN" } ], [ { "name": "text", "data": "高温热处理" } ], [ { "name": "text", "data": "表面形貌演变" } ], [ { "name": "text", "data": "结合能" } ] ] }, { "lang": "en", "data": [ [ { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN" } ], [ { "name": "text", "data": "high temperature annealing" } ], [ { "name": "text", "data": "surface morphology evolution" } ], [ { "name": "text", "data": "binding energy" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "AlN是第三代半导体的典型代表，具有直接宽带隙(6.2 eV)、良好的化学稳定性和热稳定性等优势，并且能够解决外延AlGaN材料开裂的问题，是深紫外发光二极管(Light-emitting diode, LED)普遍采用的基底材料。目前，AlN材料通常生长在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-sapphire衬底上，由于Al原子与N原子电荷中心不重合，使得AlN成为极性材料，存在强自发极化与压电极化效应。基于极性AlN外延的AlGaN深紫外LED中的强极化效应引起量子阱中电子、空穴波函数的分离，即量子限制斯塔克效应(Quantum-confined Stark effect,QCSE)，直接降低深紫外LED的量子效率，成为制约深紫外LED效率提升的重要原因。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了降低AlN基光电子器件中的QCSE，提出了对量子垒进行Si掺杂" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、适度降低AlGaN基紫外LED量子垒中Al组分" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等多种方案。但是，这些方法均无法从本质上消除QCSE的影响。消除QCSE效应最根本的方法是利用非极性面的AlN基底材料(包括" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面以及" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN更有利于后续的外延生长" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ")，进而获得非极性面的量子阱结构。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "但是，相比在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-sapphire衬底上生长极性" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-AlN，非极性" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN生长面临更大的挑战，目前尚难以实现高质量" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN材料。其主要原因如下:(1)" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-AlN生长在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-sapphire衬底上，尽管" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-AlN与" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-sapphire之间存在大的晶格失配，但是各个方向的失配度是均匀的。而" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN生长在" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "-sapphire衬底上，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN与" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "-sapphire之间失配度大且不均匀:平行于" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "轴方向" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN与" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "-sapphire衬底之间的失配度为-2.8%，而垂直于" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "轴方向" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN与" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "-sapphire衬底之间的失配度为13.1%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，难以在" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "-sapphire衬底上实现高质量非极性AlN的生长。(2)对于" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN而言，沿着" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "轴方向的Al—N键能相比" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "轴方向的键能弱，引起" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN中的晶粒比" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-AlN更容易发生扭转和倾斜，致使" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜中缺陷密度增加，使得生长高质量" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN面临巨大的挑战" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "研究人员尝试了多种方法来改善" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN层的结晶质量。如金属有机化合物化学气相沉淀(Metal-organic chemical vapor deposition,MOCVD)生长" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN时，提出选用不同偏角的" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "蓝宝石衬底" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " 、利用不同缓冲层(GaN、AlGaN等)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "以及在图形化" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN模板上进行外延横向过生长(Epitaxial lateral overgrowth,ELO)等提高" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN外延层结晶质量的方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中ELO方法可以获得结晶质量较高的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN外延层，其(" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351038&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351043&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351042&type=" } } } ] }, { "name": "text", "data": ")面X射线(X-ray diffraction,XRD)衍射摇摆曲线(XRD rocking curve,XRC)半高全宽(Full width at half maximum,FWHM)值约为700″，但是图形化衬底制备难度较高，并且再外延的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN 层需要生长到一定厚度(~6 μm)才能实现合并，难以实现大规模应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。与MOCVD法相比，磁控溅射法具有均匀性高、重复性好等优势，因此适合大规模应用。然而，溅射AlN薄膜面内晶粒扭转倾斜程度较大，材料质量有待进一步提高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "衬底上直接溅射" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的XRC FWHM最小值约为7 200″" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。有研究人员利用ZnO作为缓冲层制备了" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN层，其沿" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "轴和" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "轴的(" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351045&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351049&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351048&type=" } } } ] }, { "name": "text", "data": ")面XRC FWHM分别为4 212″和5 112″" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，缺陷密度较大，因此如何提高磁控溅射" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN晶体质量成为研究的重点。近年来，高温热处理方法被证明是一种可以提高" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-AlN晶体质量的有效方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R19", "R20" ], "text": "19-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，受此启发，研究人员也尝试利用高温热处理法来提高" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN的结晶质量。2016年，Lin等探究了缓冲层生长温度对" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN质量的影响，利用高温热处理方法提高了" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN外延层的结晶质量，其(" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351052&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351055&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351054&type=" } } } ] }, { "name": "text", "data": ")面沿" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "轴最小的XRC FWHM值为770″" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同年，该课题组通过优化缓冲层厚度，将高温热处理" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜(" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351057&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351063&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351060&type=" } } } ] }, { "name": "text", "data": ")面沿" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "轴的XRC FWHM值降低至660″" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2017年，Jinno等对磁控溅射" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜进行高温热处理，其(" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351066&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351073&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351069&type=" } } } ] }, { "name": "text", "data": ")面XRC FWHM由未退火时~8 000″降低至退火后~3 600″，结晶质量得到显著提升" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是，高温热处理影响" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面形貌的物理机理尚不明确，制约了" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN材料的进一步应用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文对高温热处理" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面形貌演变进行了深入研究，利用原子力显微镜(Atomic force microscope,AFM)分析" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面形貌演变过程，利用第一性原理计算Al原子、N原子的结合能，揭示了" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面形貌演变机理，并建立了理论模型。结果表明，在高温热处理过程中Al、N原子更趋向于从" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面与" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面分解，而在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面吸附，使得" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN样品表面在高温热处理过程中出现了沿" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "轴方向的条纹形貌，提升了" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN原子排布的方向性。本研究为高质量" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜及高性能深紫外LED研制提供了基础。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "利用超高真空磁控溅射系统在2英寸" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "-sapphire(" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351076&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351082&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351078&type=" } } } ] }, { "name": "text", "data": ")衬底上沉积" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜，反应室气体为氮气(N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")与氩气(Ar)的混合气体，N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和Ar的流量分别为120 mL/min和25 mL/min，反应室压力为1.066×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": " Pa(8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-8" } ] }, { "name": "text", "data": " Torr)，溅射功率为3 500 W，溅射温度为600 ℃," }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜厚度为200 nm。利用高温退火系统，在N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "气氛中对" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN进行高温热处理。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过Multimode 8型号原子力显微镜表征" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面形貌，通过SHIMADZU UV-3101PC型号紫外-可见分光光度计表征" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN光学特性。所有测试均在室温下完成。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "为" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面形貌随热处理温度变化的AFM表征结果，" }, { "name": "xref", "data": { "text": "图1(a)~(d)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(a)~(d)" } ] } }, { "name": "text", "data": "分别为" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN在0,1 600,1 700,1 750 ℃温度下热处理60 min的表面形貌。由图可知，未经过热处理的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN样品表面形貌呈随机分布的岛状形貌，如" }, { "name": "xref", "data": { "text": "图1(a)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(a)" } ] } }, { "name": "text", "data": "所示。该岛状形貌的形成主要与磁控溅射制备" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的物理过程相关:靶材表面被高能粒子轰击出的溅射粒子随机沉积在衬底表面，并在衬底表面发生迁移，最终聚集形成随机的岛状形貌。与未经退火处理的样品相比，在1 600 ℃温度下退火60 min的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN 样品表面形貌并无明显变化;但是在1 700 ℃温度下退火60 min后，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN 样品表面出现了沿" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "轴方向规则排列的条纹，表明" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN模板表面形成高取向性条纹的阈值温度在1 600~1 700 ℃之间。并且随着退火温度升高，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面条纹形貌的面积逐渐增大(如" }, { "name": "xref", "data": { "text": "图1(c)、(d)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(c)、(d)" } ] } }, { "name": "text", "data": "所示)。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "　a" } ] }, { "name": "text", "data": "-AlN在0 ℃(a)、1 600 ℃(b)、1 700 ℃(c)和1 750 ℃(d)退火60 min后的表面形貌AFM图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "AFM images of " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN surface morphology annealed at 0 ℃(a), 1 600 ℃(b), 1 700 ℃(c) and 1 750 ℃(d) for 60 min." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351085&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351091&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351088&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为进一步探究高取向性条纹形貌形成机理，在相同热处理温度条件下，探索" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面形貌与热处理时间的演变关系。由于1 750 ℃退火过程会破坏样品表面(该现象将在后文进行讨论)，因此热处理温度选择为1 700 ℃。" }, { "name": "xref", "data": { "text": "图2(a)~(d)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)~(d)" } ] } }, { "name": "text", "data": "分别为" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN在1 700 ℃下热处理120,180,240,480 min后的表面形貌。由该表征结果可知，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN样品表面规则化排列条纹与退火时间直接相关:随着热处理时间的增加，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜表面的条纹形貌面积逐渐增大，在1 700 ℃热处理480 min的条件下，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面演变为高取向性条纹原子台阶形貌。该实验结果表明，高温热处理" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN过程中的高取向性条纹原子台阶形貌演变是一个持续演变的过程。由于高温为" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN中Al、N原子运动提供了能量，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜在高温热处理过程中原子重新排布有可能是引起高取向性条纹原子台阶形貌演变的主要原因。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "　a" } ] }, { "name": "text", "data": "-AlN在1 700 ℃退火120 min(a)、180 min(b)、240 min(c)、480 min(d)后的表面形貌AFM图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "AFM images of " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN surface morphology annealed at 1 700 ℃ for 120 min(a), 180 min(b), 240 min(c) and 480 min(d)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351094&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351103&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351098&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "利用第一性原理分析了" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的原子行为。计算采用基于密度泛函的维也纳从头模拟软件包" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，用普度-伯克-恩泽霍夫" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "形式的密度泛函来描述交换关联作用，在投影缀加平面波赝势" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "的框架下，截断能选取为400 eV。在电子结构优化时，能量和力的收敛结构分别取10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " eV和0.2 eV/nm。采用slab模型计算原子表面吸附能，真空层设置为大于2.0 nm，其中模拟" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面、" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面、" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面的超胞大小分别为:1.63 nm×1.88 nm×2.81 nm、1.56 nm×1.51 nm×2.90 nm、1.51 nm×1.63 nm×2.94 nm，采用包含Γ点的1×1×1的" }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "text", "data": "点取样。底层的AlN固定以保持体相构型。为了加快计算收敛，slab模型底部的Al和N原子分别用带电荷1.25" }, { "name": "italic", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "和0.75" }, { "name": "italic", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "的分数氢原子饱和。根据公式:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351108&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351111&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351114&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF12" } }, { "name": "p", "data": [ { "name": "text", "data": "计算了吸附原子吸收模型的结合能，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "bind" } ] }, { "name": "text", "data": "是Al/N原子的原子结合能，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "slab+adatom" } ] }, { "name": "text", "data": "代表整个体系的总能量，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "slab" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "free adatom" } ] }, { "name": "text", "data": "分别是完整slab基底和自由Al/N原子的能量。根据该公式定义，结合能为负值代表结合后的体系更稳定，结合能数值越低代表结合能力越强。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "不同晶面上Al/N原子的稳定吸附构型如" }, { "name": "xref", "data": { "text": "图3(a)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)" } ] } }, { "name": "text", "data": "所示，在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面(0001)上，Al/N原子倾向于吸附在六元环中心的位置，在非极性的" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面(" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351117&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351126&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351122&type=" } } } ] }, { "name": "text", "data": ")和" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面(" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351129&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351139&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351135&type=" } } } ] }, { "name": "text", "data": ")上，Al/N原子倾向于吸附在理想晶格附近的位置。Al原子在" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面、" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面的结合能接近，分别为-2.67 eV和-2.75 eV，数值上明显高于在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面结合能-4.41 eV，表明Al原子在" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面和" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面的结合能力弱于" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面;N原子在" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面、" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面、" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面结合能逐步递减，分别为-0.83,-2.47,-8.41 eV，表明N原子在" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面、" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面和" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面的结合能力呈逐步升高的趋势。为进一步解释Al、N原子在" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面的扩散过程，采用表面撒点取样的方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，对" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN(" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351143&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351148&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351147&type=" } } } ] }, { "name": "text", "data": ")面不同位点Al/N原子的势能面进行计算。结果如" }, { "name": "xref", "data": { "text": "图3(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(b)" } ] } }, { "name": "text", "data": "所示，Al原子在[0001]方向的迁移势垒约为0.24 eV，在[" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351154&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351161&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351157&type=" } } } ] }, { "name": "text", "data": "]方向的迁移势垒约为0.68 eV;N原子在[0001]" }, { "name": "text", "data": "方向的迁移势垒约为0.74 eV，在[" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351165&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351175&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351170&type=" } } } ] }, { "name": "text", "data": "]方向的迁移势垒约为1.90 eV。" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN上Al/N原子的迁移均表现出很强的各项异性，在[0001]方向的迁移势垒要明显低于[" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351180&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351191&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351186&type=" } } } ] }, { "name": "text", "data": "]方向，这有利于" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面[0001]方向的侧向生长。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "(a)优化后的Al/N原子在AlN不同晶面上的吸附构型;(b)Al/N原子在" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面的势能面;(c)高温热处理过程中" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN 分解和再吸附的表面形态模型。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "(a)Optimized adsorption structure of Al/N on different AlN surfaces. (b)Potential energy surface for Al/N adatom on (" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351196&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351205&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351200&type=" } } } ] }, { "name": "text", "data": ") AlN surface. (c)Surface morphology model of the decomposition and redeposition of " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN during high temperature annealing process." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351210&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351220&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351215&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "根据结合能与迁移势垒的计算结果，在热处理温度更高以及热处理时间更长的条件下，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面的Al/N原子更趋向于从" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面解离进而暴露出一部分" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面，由于相邻的" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面和" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面呈30°夹角，使得" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面呈现出高度有序的条纹形貌。同时解离出的Al/N原子倾向于在表面沿[0001]方向迁移，进而在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面吸附，使条纹倾向于在侧向(" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "方向)继续生长，导致条纹结构更加显著。根据计算结果建立了模型来描述" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面在高温退火过程中的解离和再吸附过程，如" }, { "name": "xref", "data": { "text": "图3(c)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(c)" } ] } }, { "name": "text", "data": "所示，在高温热处理的过程中，" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面上的Al/N原子最先倾向于解离出来，暴露的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面、" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面形成表面条纹;解离出来的Al、N原子吸附在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面导致条纹进一步地侧向生长，最终形成了沿着" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "方向的高取向性条纹原子台阶形貌。" } ] }, { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜表面形貌的演变将影响材料质量及光学特性。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "为" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜透射光谱、禁带宽度与高温热处理温度、时间的关系曲线。其中，" }, { "name": "xref", "data": { "text": "图4(a)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)" } ] } }, { "name": "text", "data": "为" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜在不同温度下热处理60 min的透射光谱。由图可知，随着热处理温度升高，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的光学透过率逐渐增大，其原因分析如下:未进行高温热处理的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN表面为无规则的岛状形貌，高密度岛会对光线产生不规则散射作用，从而使" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN透光性能降低;随着退火温度升高，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜表面形成沿着" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "方向的高取向性条纹原子台阶形貌，降低了光散射，提升了光在" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN中的透过能力。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "(a)不同温度下热处理60 min的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的光学透射谱，插图显示了在不同温度下热处理60 min的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN层的禁带宽度;(b)不同热处理时间的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的光学透射谱，插图显示不同热处理时间的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN层的禁带宽度;(c)不同退火温度条件下(" }, { "name": "italic", "data": [ { "name": "text", "data": "αE" } ] }, { "name": "text", "data": ") " }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "与" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "的关系曲线;(d)不同退火时间条件下(" }, { "name": "italic", "data": [ { "name": "text", "data": "αE" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "与" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "的关系曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "(a)Optical transmission spectra of AlN templates annealed at different temperature for 60 min and the illustration shows the band gap of " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN. (b)Optical transmission spectra of AlN template annealed at 1 700 ℃ under different annealing time, and the illustration shows the band gap of " }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN. (c)Dependence of (" }, { "name": "italic", "data": [ { "name": "text", "data": "αE" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " to " }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": " with different annealing temperature. (d)Dependence of (" }, { "name": "italic", "data": [ { "name": "text", "data": "αE" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " to " }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": " with different annealing time." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351226&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351236&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351231&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在延长热处理时间的条件下，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的透射光谱呈现与退火温度相同的趋势，即随着高温热处理时间的延长，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的透光能力增强，如" }, { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "所示，再次证明了" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜沿着" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "方向的高取向性条纹原子台阶形貌显著提升了透光能力。膜厚会对薄膜样品弱吸收区吸收系数及折射率造成影响，进而导致透射光谱震荡周期畸变" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图4(a)、(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)、(b)" } ] } }, { "name": "text", "data": "中过高温度(1 750 ℃退火60 min)及过长时间(1 700 ℃退火480 min)热处理" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN样品，其光学透射谱振荡周期明显畸变，该结果表明过高的退火温度及过长的退火时间会使" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN膜厚均匀性遭到破坏。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过对透射光谱曲线进行分析拟合可计算" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的禁带宽度，从而反映" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的结晶质量。拟合" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜禁带宽度的公式如下所示:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351240&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351244&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21351248&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF13" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "text", "data": "为吸光系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "为光子能量，" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "为材料常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "为禁带宽度。利用透射光谱得到吸收系数" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "text", "data": "并通过该公式可计算得到(" }, { "name": "italic", "data": [ { "name": "text", "data": "αE" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "与光子能量" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "的关系曲线，如" }, { "name": "xref", "data": { "text": "图4(c)、(d)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(c)、(d)" } ] } }, { "name": "text", "data": "所示。上述公式成立条件为入射光子能量" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "大于材料禁带宽度" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "，因此将关系曲线中高光子能量部分进行线性拟合，拟合直线与" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "轴交点即为样品的禁带宽度。拟合所得禁带宽度结果如" }, { "name": "xref", "data": { "text": "图4(a)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)" } ] } }, { "name": "text", "data": "以及" }, { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "中插图所示，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的禁带宽度随着热处理温度升高以及退火时间延长而增大。随着热处理温度升高到1 750 ℃," }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的禁带宽度从6.09 eV增加到6.12 eV;在1 700 ℃热处理条件下，当热处理时间增加至480 min," }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜的带隙宽度由6.11 eV增加到6.16 eV，更加趋近于AlN单晶体块材料的禁带宽度(~6.2 eV)，证明" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜在高温热处理过程中薄膜结晶质量得以提高。因此，通过对" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN材料的透射光谱分析可以得出结论，高温热处理可使" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN发生原子解离、迁移、再吸附，从而形成高取向性条纹原子台阶形貌，提高了薄膜的透光能力与结晶质量。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文研究了高温热处理对" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜表面形貌演变的影响及物理机理。结果表明，高温热处理为Al、N原子运动提供了能量，由于Al、N原子在" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN的" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面以及" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面结合能力低于在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面的结合能力，导致在高温热处理过程中Al、N原子更趋向于从" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "面与" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "面解吸附，同时解离出的Al/N原子倾向于在表面沿[0001]方向迁移，并在" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面吸附，使得随着退火温度升高与退火时间延长，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜表面由岛状形貌演变成高取向性条纹原子台阶形貌，进而引起" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN薄膜光学特性和晶体质量的提升。本研究对获得高质量" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "-AlN以及解决AlGaN深紫外QCSE具有重要意义。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址:http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210111." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LI D B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JIANG K" }, { "name": "text", 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