NaTFSI界面修饰对平面TiO<sub>2</sub>基钙钛矿太阳能电池的影响

邹宇; 李昭; 陈衡慧; 刘伊辰; 童安玲; 颜惠英; 何若玮; 花国鑫; 曾伟东; 孙伟海

doi:10.37188/CJL.20210045

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NaTFSI界面修饰对平面TiO₂基钙钛矿太阳能电池的影响

器件制备及器件物理 | 更新时间：2021-05-20

- NaTFSI界面修饰对平面TiO₂基钙钛矿太阳能电池的影响
- Effect of Interfacial Modification for TiO₂-based Planar Perovskite Solar Cells Using NaTFSI
- 发光学报 2021年 42卷第5期 (2021)
- 作者机构：
  
  华侨大学　材料科学与工程学院，物理化学研究所，福建省光电功能材料重点实验室，环境友好功能材料教育部工程研究中心,福建,厦门,361021
- 作者简介：
- 基金信息：
  
  国家自然科学基金联合基金重点项目(U1705256);国家自然科学基金(1771066;51972123;61804058);华侨大学中青年教师科研提升资助计划(ZQN-706)
- DOI：10.37188/CJL.20210045 中图分类号： TM914.4
- 纸质出版日期：2021-05-01，
  
  收稿日期：2021-01-30，
  
  修回日期：2021-02-13，
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引用本文
邹宇, 李昭, 陈衡慧, 等. NaTFSI界面修饰对平面TiO₂基钙钛矿太阳能电池的影响[J]. 发光学报, 2021, 42(5):682-690.

Yu ZOU, Zhao LI, Heng-hui CHEN, et al. Effect of Interfacial Modification for TiO₂-based Planar Perovskite Solar Cells Using NaTFSI[J]. Chinese Journal of Luminescence, 2021, 42(5):682-690.
邹宇, 李昭, 陈衡慧, 等. NaTFSI界面修饰对平面TiO₂基钙钛矿太阳能电池的影响[J]. 发光学报, 2021, 42(5):682-690. DOI： 10.37188/CJL.20210045.

Yu ZOU, Zhao LI, Heng-hui CHEN, et al. Effect of Interfacial Modification for TiO₂-based Planar Perovskite Solar Cells Using NaTFSI[J]. Chinese Journal of Luminescence, 2021, 42(5):682-690. DOI： 10.37188/CJL.20210045.

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361021, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "在钙钛矿太阳能电池(PSCs)中，光吸收钙钛矿层夹在电子传输层(ETL)和空穴传输层(HTL)之间。钙钛矿层与电荷传输层之间的界面复合被认为是诱发器件电压损失的主要原因。通过对电荷传输层的修饰，不仅可以提高其电荷传输性能，而且还可以钝化界面缺陷，从而提高电池的光电转换效率(PCE)和稳定性。通过在平面二氧化钛层上引入一层双(三氟甲基磺酰基)亚胺钠(NaTFSI)来修饰二氧化钛ETL和钙钛矿之间的界面。实验结果显示，利用NaTFSI界面层修饰二氧化钛ETL不仅可以增大上层钙钛矿晶粒尺寸大小，减少晶界从而降低界面载流子复合;而且NaTFSI修饰后的ETL导电性增强，功函数降低。最后，通过优化NaTFSI界面层，实现了器件效率从18.62%至19.83%的显著提升。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "A typical perovskite solar cell(PSC) structure involves the light absorbing perovskite layer sandwiched between the electron-transport layer(ETL) and the hole-transport layer(HTL). The charge recombination at the interface between the perovskite layer and the charge-transport layer is considered to be the major cause of the voltage loss of the device. With the modification of the charge-transport layer, it can not only improve its charge transport properties, but also passivate the interface defects, thus enhancing the power conversion efficiency(PCE) and stability of the PSCs. The interface between ETL and perovskite is modified by introducing Na [(CF" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "SO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "N] (NaTFSI) on the planar TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " layer. Experimental results show that the ETL modified with the NaTFSI interface layer could not only increase the size of the perovskite grains, but also reduce the grain boundaries and the interface carrier recombination. In addition, the ETL modified with the Na-TFSI can also enhance the conductivity of the ETL and decrease its work function. Finally, we achieved a significant increase in device efficiency from 18.62% to 19.83% by optimizing the NaTFSI interface layer." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "钙钛矿太阳能电池" } ], [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ], [ { "name": "text", "data": "NaTFSI" } ], [ { "name": "text", "data": "界面修饰" } ], [ { "name": "text", "data": "光电转换效率" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "perovskite solar cells" } ], [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ], [ { "name": "text", "data": "NaTFSI" } ], [ { "name": "text", "data": "interface modification" } ], [ { "name": "text", "data": "photoelectric conversion efficiency" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "作为光电能源材料研究领域的热门课题，有机-无机杂化钙钛矿太阳能电池(PSCs)被认为是最有前景的新型太阳能电池之一，其光电转换效率(PCE)从首次报道的3.8%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "迅速提升至目前的25.5%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。钙钛矿型晶体(" }, { "name": "italic", "data": [ { "name": "text", "data": "ABX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")有许多种，而作为太阳能电池中的吸光活性材料的钙钛矿晶体，其" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "位离子包括有机阳离子甲胺(CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": ", MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": ")、甲脒(NH=CHN" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": ",FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": ")、无机阳离子Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R3", "R4" ], "text": "3-4", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";二价金属离子" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "包括Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R5", "R6" ], "text": "5-6", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "离子通常是卤素离子，例如I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "、Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "、Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。钙钛矿材料因具有吸收系数高" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、载流子扩散长度长" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "以及吸收范围宽" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "等优点，使其在光电器件中具有广泛的应用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在传统的PSCs器件结构中，除了钙钛矿光活性层之外，还有导电玻璃基底、电子传输层(ETL)、空穴传输层(HTL)和金属电极等。其中,ETL可以促进电子的提取，有效降低电子从钙钛矿吸光层跃迁到阳极的能垒，并起到阻挡空穴的作用，其好坏往往是决定PSCs器件性能的主要因素之一" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "材料由于其高的电子注入率、稳定的化学性质和低廉的价格，成为PSCs中最常见的电子传输材料" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。然而，溶液法制备的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜表面存在大量的缺陷，这些缺陷会引起载流子在钙钛矿层与ETL的界面处发生非辐射复合，阻碍电荷传输，因此严重制约了器件PCE的进一步提升" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。此外，非辐射复合也会诱发器件效率的衰减和迟滞现象" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。大量研究表明，界面修饰可以有效钝化界面缺陷，优化ETL的能级结构，改善界面接触并促进界面处的载流子传输，从而显著提高器件开路电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "oc" } ] }, { "name": "text", "data": ")和稳定性并降低器件中的迟滞现象" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "R17", "R18" ], "text": "17-18", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。例如,Zhu等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "利用一种苯甲酸衍生物来钝化TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "表面的缺陷，从而提升电子提取速率，所制备的器件最优PCE达到了18.43%，且最大稳态输出效率可以保持在17.19%;Petrozza等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "将富勒烯衍生物PC" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "BM引入至钙钛矿层与TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层的界面处，降低了ETL界面的缺陷态密度，抑制了电荷的非辐射复合，最终优化后的器件获得了17.9%的效率;Graetzel等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "在TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "介孔层表面旋涂一层双(三氟甲基磺酰基)亚胺锂(LiTFSI)修饰层，基于该结构制备的器件效率达到19.3%。他们认为Li的掺杂不仅能有效降低TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的导带边缘，提升电子的注入效率;而且还能诱导介孔层中的少量Ti" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "还原为Ti" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "，有效地降低TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜表面的缺陷态，进而减少非辐射复合中心的数量和PSCs的迟滞效应。尽管LiTFSI在TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "介孔层表面的修饰改善了器件的PCE和迟滞现象，但是一方面由于其器件采用的介孔结构会增加器件的制作成本和周期，另一方面，具有强吸湿性的Li" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "很容易迁移到钙钛矿的内部，从而诱发器件效率的衰退。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文采用溶液旋涂法，在平面二氧化钛ETL上制备一层NaTFSI界面修饰层，系统研究了不同浓度的NaTFSI溶液对器件性能的影响，并通过扫描电子显微镜(SEM)、X射线衍射(XRD)、紫外可见光谱(UV-Vis)、稳态荧光光谱(PL)和电化学阻抗谱(EIS)等测试手段对器件界面的表面形貌、物相结构和光电性能等进行表征与分析。结果表明，当NaTFSI浓度为100 mg·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "时，器件获得了最高的PCE(19.83%)，而未加修饰层器件的PCE仅为18.62%;同时，基于器件效率制成的箱式图中(分别取自30个空白器件和修饰器件)证实了NaTFSI修饰后器件的光电性能优于未修饰器件。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　原料" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "FTO导电玻璃(7 Ω·□" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")购自辽宁优选科技有限公司。碘化铯(CsI,99.99%)和碘化铅(PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ",99.99%)从TCI公司购入。碘甲脒(FAI," }, { "name": "text", "data": ">" }, { "name": "text", "data": "99.5%)、溴化铅(PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ",99.99%)、溴甲胺(MABr,99.50%)均购买自西安宝莱特光电材料有限公司。双(三氟甲基磺酰基)亚胺锂(LiTFSI,99.95%)、双(三氟甲基磺酰基)亚胺钠(NaTFSI,99.95%)、乙腈(99.8%)、氯苯(99.8%)、N,N-二甲基甲酰胺(DMF,99.8%)、4-叔丁基吡啶(4-tBP,96%)、二甲基亚砜(DMSO,99.9%)购自Sigma-Aldrich。钛酸四丁酯(AR)、乙醇(AR)、甲苯(AR)、环己烷(AR)、油酸(AR)、油胺(AR)由上海国药化学试剂公司购入。Spiro-OMeTAD购自深圳飞鸣科技有限公司。除非特别说明，否则所有化学物质无需进一步纯化即直接使用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "量子点采用上述试剂并按照文献［" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "］中的制备方法合成。钙钛矿前驱液的制备:在手套箱中分别称取0.529 0 g PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、0.074 3 g PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、0.017 6 g CsI、0.187 4 g FAI、0.015 7 g MABr溶解于0.2 mL DMSO和0.8 mL DMF的混合溶液中，搅拌至完全溶解，待用，该步骤所制备的钙钛矿化学式为Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.05" } ] }, { "name": "text", "data": "(MA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.17" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.83" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "0.95" } ] }, { "name": "text", "data": "Pb(I" }, { "name": "sub", "data": [ { "name": "text", "data": "0.83" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "0.17" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "。Spiro-OMeTAD溶液的制备:在手套箱中称取72.3 mg的Spiro-OMeTAD，溶于1 mL氯苯中，搅拌至完全溶解后，加入17.5 μL LiTFSI溶液(260 mg LiTFSI溶于0.5 mL乙腈)和28.8 μL 4-tBP，搅拌均匀待用。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　器件制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "首先，将刻蚀后的FTO用清洁剂清洗后，依次置于无水乙醇、丙酮和异丙醇中，每次超声清洗30 min，取出后用氮气吹干表面残留溶剂。之后将其放入紫外臭氧清洗机中，处理20 min再放入等离子清洗仪清洗5 min后取出;然后，通过旋涂法，将50 μL TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "量子点溶液均匀铺展在FTO表面，制备成电子传输层，旋涂具体参数为700 r/min、5 s和4 000 r/min、20 s，将旋涂好的薄膜转移至马弗炉中在450 ℃下烧结30 min;待冷却至室温后在TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜上旋涂40 μL不同浓度的NaTFSI乙腈溶液(80 mg·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "、100 mg·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "、120 mg·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")，转速为4 000 r/min，时间为20 s。随后放入马弗炉中，在450 ℃条件下，烧结30 min，冷却至室温后，转移至等离子清洗仪中，等离子体处理10 min;将处理好的FTO送进手套箱，在NaTFSI界面层上滴加20 μL 钙钛矿前驱液，通过一步反溶剂旋涂法制备钙钛矿层，旋涂参数为1 000 r/min、 10 s和6 500 r/min、 20 s，在第25 s时滴加130 μL的反溶剂氯苯，促进钙钛矿薄膜结晶。旋涂结束后，将薄膜转移到加热台上,100 ℃处理60 min;冷却至室温后，取20 μL Spiro-OMeTAD溶液铺展在钙钛矿薄膜上进行旋涂，旋涂参数为700 r/min、5 s和4 000 r/min、20 s，旋涂结束后，将器件置于湿度小于15%的防潮柜中氧化12 h;最后，将器件放入高真空镀膜机，在真空度小于6.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa的状态下蒸镀80 nm金对电极，完成电池的组装。同时，在相同的条件下制备没有NaTFSI界面层的空白器件。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　表征方法" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "通过美国Thermo Fisher Scientific 公司的ESCLAB 250XI型的X射线光电子能谱(XPS)和紫外光电子能谱(UPS)对修饰前后的ETL表面的元素分析和能级结构进行测试;使用场发射扫描电子显微镜(SEM,Hitachi S-8010)对ETL和钙钛矿层的表面形貌进行表征;利用X射线粉末衍射仪(XRD,Bruker D8 Advance)对ETL和钙钛矿层的晶体结构进行表征，测试条件为:Cu Ka(" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "=0.154 05 nm)、40 kV、40 mA;通过紫外-可见光谱仪(UV-Vis,Shimadzu UV-2550)测试不同ETL的吸收光谱;采用稳态荧光分光光谱仪(PL,Thermo Scientific Lumina)和时间分辨光谱仪(TRPL,OmniFluo TRPL5)研究ETL/钙钛矿界面的电荷传输和复合;电化学阻抗(EIS)则采用德国ZAHNER公司IM6e型电化学工作站进行测试;电池的伏安(" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": ")特性曲线是在光强为100 W/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的AM1.5G的模拟光源(Newport,PVIV-94043)下，通过Keithley-2400型数字源表记录测试结果。光强利用校准单晶硅太阳能电池标定。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "为将NaTFSI旋涂在平面TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "上的钙钛矿太阳能电池的器件结构，即FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/NaTFSI/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.05" } ] }, { "name": "text", "data": "(MA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.17" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.83" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "0.95" } ] }, { "name": "text", "data": "Pb(I" }, { "name": "sub", "data": [ { "name": "text", "data": "0.83" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "0.17" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Spiro-OMe-TAD/Au。其中,NaTFSI的化学结构如右图所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "旋涂NaTFSI所采用的器件结构" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Device structure based on NaTFSI" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350462&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350468&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350464&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "为100 mg·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " NaTFSI 修饰前和修饰后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的XPS全谱图。" }, { "name": "xref", "data": { "text": "图2(b)、(c)、(d)和(e)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)、(c)、(d)和(e)" } ] } }, { "name": "text", "data": "分别是两种TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜对应的Na 1s、F 1s、S 2p和Ti 2p的高分辨XPS谱图。从图中可以发现，经过NaTFSI修饰后,TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜表面在1 071,688,170 eV出现了很强的峰，分别对应着Na 1s、F 1s和S 2p的特征峰，证明NaTFSI成功地修饰到TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜上。更重要的是，我们发现经过NaTFSI处理过的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的Ti 2p轨道分离的两个峰向高结合能的方向移动，这是由于TFSI阴离子具有非常强的吸电子能力，能和TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜表面的Ti" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "形成更强的相互作用，从而升高了Ti 2p轨道的结合能" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "NaTFSI修饰前后TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的XPS图。(a)全谱图;Na 1s(b)、F 1s(c)、S 2p(d)、Ti 2p(e)高分辨谱图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "XPS of TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " films modified with or without NaTFSI. (a)Full spectra. (b)Na 1s. (c)F 1s. (d)S 2p. (e)Ti 2p." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350471&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350476&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350473&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了探究NaTFSI修饰层对TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜表面形貌的影响，我们测试了利用100 mg·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " NaTFSI处理前后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的SEM图。通过" }, { "name": "xref", "data": { "text": "图3(a)、(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)、(b)" } ] } }, { "name": "text", "data": "的对比发现，在TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "上旋涂一层NaTFSI后，能较大幅度地提高FTO基底的覆盖率，并且在表面上形成树枝状晶体结构。这种结构的存在能增加界面层与钙钛矿层的接触面积，有利于电子的提取，从而降低界面层与钙钛矿层之间的接触电阻" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。同时，我们对比了在NaTFSI修饰前后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基底上生长的钙钛矿薄膜的SEM图。从" }, { "name": "xref", "data": { "text": "图3(c)、(d)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(c)、(d)" } ] } }, { "name": "text", "data": "中可以看出，经过NaTFSI处理后的钙钛矿薄膜变得更加均匀，且具有较大尺寸的晶粒和较少的晶界，说明NaTFSI的存在会对钙钛矿晶体的生长产生有利的影响，从而改善钙钛矿薄膜的质量。" }, { "name": "xref", "data": { "text": "图3(e)、(f)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(e)、(f)" } ] } }, { "name": "text", "data": "分别是NaTFSI处理前后的器件截面图，从图中可以观察到，处理后器件的钙钛矿颗粒尺寸显著增大，且形成了部分纵向贯穿整个钙钛矿薄膜的晶粒，从而减少了器件中的晶界数目。器件中晶界的减少，意味着载流子复合中心的减少，有利于提升载流子的传输效率，对于提升钙钛矿太阳能电池性能至关重要" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "SEM表面图:(a)TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " 薄膜,(b)NaTFSI修饰后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜;(c)钙钛矿薄膜生长于TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " 薄膜;(d)NaTFSI修饰后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜;SEM横截图:(e)TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基,(f)NaTFSI修饰TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基的PSCs。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "SEM images of TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " film(a) and NaTFSI modified TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " film(b). Perovskite films based on TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " film(c) and NaTFSI modified TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " film(d). Cross-sectional images of TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-based PSCs(e) and NaTFSI modified TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " -based PSCs(f)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350477&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350480&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350479&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4(a)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)" } ] } }, { "name": "text", "data": "是沉积在TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层和NaTFSI修饰层上的钙钛矿薄膜的紫外-可见吸收光谱(UV-Vis)，通过对比可以看出，经过NaTFSI修饰后生长的钙钛矿薄膜在400500 nm的波长范围显示出了较强的吸光强度。分析其原因可能是修饰后的钙钛矿晶体颗粒变大，导致薄膜的光散射增加，从而增强了薄膜的吸光能力" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。然而，在波长500800 nm范围内的两条吸光曲线之间变化并不明显，说明NaTFSI修饰层的引入不会改变上层钙钛矿薄膜的禁带宽度。为了探究NaTFSI修饰层对钙钛矿薄膜结晶性能的影响，我们测试了沉积在NaTFSI修饰前后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜上的钙钛矿吸光层的XRD图谱，结果如" }, { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "所示。从图中我们可以观察到，基于NaTFSI修饰后沉积的钙钛矿薄膜在14°左右出现的钙钛矿(110)晶面衍射峰的强度小幅增强，同时，薄膜中碘化铅(001)晶面的特征衍射峰强度出现显著降低，进一步说明经过NaTFSI界面修饰后沉积的钙钛矿薄膜的结晶性能得到了提升，这一结果与前文中提到的SEM和吸收光谱结果一致。为了研究NaTFSI对TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层导电性能的影响，我们制备了结构分别为FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Au和FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/NaTFSI/Au的器件，并进行了Tafel测试。结果如" }, { "name": "xref", "data": { "text": "图4(c)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(c)" } ] } }, { "name": "text", "data": "所示，在大部分区间里，含有NaTFSI的器件的电流要高于不含NaTFSI的器件，这说明经过NaTFSI处理后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的导电性能增强。具有高导电能力的电子传输层能有效降低传输层与钙钛矿层界面处的载流子聚集，减少器件中电子和空穴的复合" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "沉积于不同基底上的钙钛矿薄膜的紫外-可见光谱(a)和XRD图谱(b);(c)NaTFSI处理前后器件的Tafel曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "UV-Vis absorption spectra(a) and XRD(b) of perovskite films deposited on different substates. (c)Tafel curves of devices with or without the treatment of NaTFSI." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350481&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350483&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350482&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了分析NaTFSI对TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电子传输层的能级结构的影响，我们测试了不同TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电子传输层的UPS和能谱图。" }, { "name": "xref", "data": { "text": "图5(a)、(b)、(c)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(a)、(b)、(c)" } ] } }, { "name": "text", "data": "分别是NaTFSI修饰前后TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的费米边缘区域(" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "oneset" } ] }, { "name": "text", "data": ")、截止结合能区域(" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "cutoff" } ] }, { "name": "text", "data": ")和带隙图(" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": ")。半导体薄膜的价带顶(" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "VB" } ] }, { "name": "text", "data": ")和导带底(" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "CB" } ] }, { "name": "text", "data": ")可以根据公式" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "VB" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "hν-" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "cutoff" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "onset" } ] }, { "name": "text", "data": ")和" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "CB" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "VB" } ] }, { "name": "text", "data": "+" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "计算，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "=21.22 eV(He Ⅰ的光源能量)。计算所得的相关参数在" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "中列出，并结合修饰前后TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电子传输层的相关参数和钙钛矿层的能级数据做出了" }, { "name": "xref", "data": { "text": "图5(d)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(d)" } ] } }, { "name": "text", "data": "的能级图。从图中可以得知，经过NaTFSI修饰后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "CB" } ] }, { "name": "text", "data": "更加接近钙钛矿的最低未占据轨道(LUMO)能级，这将减少电子从钙钛矿层传递到TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电子传输层的势垒，提升ETL对电子的提取能力，增大器件的开路电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "NaTFSI修饰前后TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电子传输层的能级参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Energy level data of TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " ETLs before or after the modification of NaTFSI" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "ETL" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "onset" } ] }, { "name": "text", "data": "/eV" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "cutoff" } ] }, { "name": "text", "data": "/eV" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "/eV" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "VB" } ] }, { "name": "text", "data": "/eV" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "CB" } ] }, { "name": "text", "data": "/eV" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2.76" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "16.81" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3.12" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "-7.17" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "-4.05" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/NaTFSI" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "3.34" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "17.52" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "3.10" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "-7.04" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "-3.94" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350486&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350484&type=" } } }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "NaTFSI修饰前后TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的UPS谱图:(a)" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "oneset" } ] }, { "name": "text", "data": "区域,(b)" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "cutoff" } ] }, { "name": "text", "data": "区域,(c)带隙图;(d)不同ETLs和钙钛矿的能级图;在不同ETLs沉积钙钛矿薄膜的PL(e)和TRPL(f)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "UPS of TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " films treated with or without NaTFSI: (a)" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "oneset" } ] }, { "name": "text", "data": ", (b)" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "cutoff" } ] }, { "name": "text", "data": ", (c)" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": ". (d)Energy level of different ETLs and perovskite film. PL(e) and TRPL(f) of perovskite films based on different ETLs." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350489&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350493&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350490&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "同时，我们使用稳态/瞬态荧光光谱(PL/TRPL)研究了NaTFSI对钙钛矿薄膜电荷转移动力学的影响。" }, { "name": "xref", "data": { "text": "图5(e)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(e)" } ] } }, { "name": "text", "data": "是结构分别为FTO/Perovskite、FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Perovskite、FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/NaTFSI/Perovskite的PL光谱。可以看出，在FTO和钙钛矿层之间插入TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "后，钙钛矿的荧光出现一定程度的猝灭，值得注意的是，在TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层和钙钛矿层之间引入NaTFSI层后，薄膜的荧光强度急剧下降，这说明NaTFSI修饰后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电子传输层的载流子分离和电子提取能力显著增加。" }, { "name": "xref", "data": { "text": "图5(f)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(f)" } ] } }, { "name": "text", "data": "是相关薄膜对应的TRPL光谱，我们可以用一个双指数函数" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": ")=A" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "exp" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350495&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350503&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350499&type=" } } } ] }, { "name": "italic", "data": [ { "name": "text", "data": "+A" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "exp" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350508&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350517&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350513&type=" } } } ] }, { "name": "text", "data": "来拟合它们的衰减过程，并将拟合计算得到的关键参数(包括快衰减寿命" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "、慢衰减寿命" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和平均衰减寿命" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ave" } ] }, { "name": "text", "data": ")总结于" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "。结果表明,TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜表面经过NaTFSI处理后，其" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ave" } ] }, { "name": "text", "data": "从65.87 ns减小到54.47 ns，说明NaTFSI修饰后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层与钙钛矿薄膜间的电子提取和传输能力提高，这一结果与PL的变化一致。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "不同基底上钙钛矿薄膜的TRPL拟合参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.2" } ], "title": [ { "name": "text", "data": "Fitted parameters of perovskite films based on different substrates" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Samples" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "/ns" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/ns" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ave" } ] }, { "name": "text", "data": "/ns" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "FTO/PVK" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "17.76" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "167.31" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "160.43" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/PVK" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "13.10" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "79.29" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "65.87" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "FTO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/NaTFSI/PVK" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "12.35" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "65.93" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "54.47" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350525&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350521&type=" } } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6(a)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(a)" } ] } }, { "name": "text", "data": "是不同浓度NaTFSI修饰平面TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基钙钛矿太阳能电池的" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "曲线，其相应器件的光伏参数列于" }, { "name": "xref", "data": { "text": "表3", "type": "table", "rid": "T3", "data": [ { "name": "text", "data": "表3" } ] } }, { "name": "text", "data": "中。从图和表中可以看出，随着NaTFSI浓度的增加，器件的PCE呈现先增加后减小的趋势。当NaTFSI浓度为100 mg·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "时，器件获得了最优效率值19.83%，其" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "为1.14 V，短路电流(" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SC" } ] }, { "name": "text", "data": ")为22.86 mA·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "，填充因子(FF)为76.07%，采用6组数据取平均值的平均效率(Average PCE)为(19.44±0.22)%;而空白对照组器件的PCE仅为18.62%，其" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "为1.10 V," }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SC" } ] }, { "name": "text", "data": "为22.50 mA·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ",FF为74.84%,Average PCE为(17.54±0.48)%。其中," }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "的提高主要得益于NaTFSI修饰后的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电子传输层与钙钛矿层的界面处的缺陷减少和能级匹配等因素;" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SC" } ] }, { "name": "text", "data": "的提升主要归功于钙钛矿薄膜的吸光性能的增强和修饰后ETL的导电性能的提高。同时，为了更宏观地表现NaTFSI修饰对器件性能的影响，我们分别统计了NaTFSI修饰前后各30个PSCs的PCE，并将所得数值制成箱式图，如" }, { "name": "xref", "data": { "text": "图6(b)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(b)" } ] } }, { "name": "text", "data": "所示。经过NaTFSI修饰后的器件的PCE值显著高于修饰前的器件，并且PCE的波动范围较小，表明基于NaTFSI修饰TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电子传输层的PSCs具有较好的重复性和可操作性。" }, { "name": "xref", "data": { "text": "图6(c)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(c)" } ] } }, { "name": "text", "data": "为NaTFSI修饰后器件的稳态光电流输出曲线。经过300 s的持续光照测试，其电流密度输出值稳定在20.50 mA·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "，相应的效率值为19.27%，与" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "曲线的测试结果较接近。此外，我们采用电化学阻抗谱(EIS)探究NaTFSI修饰层对器件中界面电荷转移和复合的机制，测试结果如" }, { "name": "xref", "data": { "text": "图6(d)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(d)" } ] } }, { "name": "text", "data": "所示。无论是否经过NaTFSI修饰，两组器件的Nyquist图都出现了两个半圆形，其中在高频区域(左侧)的半圆形与器件中的电荷转移和输运电阻(" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "co" } ] }, { "name": "text", "data": ")有关，而在低频区域(右侧)的不完整半圆形与器件内部的复合电阻(" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "rec" } ] }, { "name": "text", "data": ")有关" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。从图中可以明显看出，修饰后的器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "co" } ] }, { "name": "text", "data": "较低，说明修饰后器件中的界面电荷传输阻力减小，有利于ETL对电子的提取;而" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "rec" } ] }, { "name": "text", "data": "显著增大，表明修饰后器件内部电荷复合的阻力增大，有利于抑制载流子的非辐射复合，从而提升器件的光电性能。" } ] }, { "name": "table", "data": { "id": "T3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表3" } ], "title": [ { "name": "text", "data": "基于不同浓度NaTFSI修饰平面TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基钙钛矿太阳能电池的主要光伏参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.3" } ], "title": [ { "name": "text", "data": "Photovoltaic parameters of PSCs based on TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " ETLs modified with different concentration of NaTFSI" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Concentration/(mg·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "/V" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SC" } ] }, { "name": "text", "data": "/(mA·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "FF/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "PCE/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Average PCE/%" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.10" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "22.50" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "74.84" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "18.62" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "17.54±0.48" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "80" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.12" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "22.70" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "76.63" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "19.54" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "19.06±0.37" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "100" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.14" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "22.86" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "76.07" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "19.83" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "19.44±0.22" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "120" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1.12" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "22.58" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "75.57" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "19.17" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "18.73±0.24" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350532&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350528&type=" } } }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "(a)不同浓度NaTFSI修饰TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基钙钛矿电池的" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "曲线;(b)NaTFSI修饰前后器件(各30个)PCE的箱式分布图;(c)NaTFSI修饰后器件的稳态输出曲线;(d)NaTFSI修饰前后器件的EIS图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "(a)" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": " curves of the PSCs based on TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " modified with different concentration of NaTFSI. (b)Statistical data based on 30 independent PSCs with or without NaTFSI modification. (c)Steady-state " }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SC" } ] }, { "name": "text", "data": " and PCE output of PSC modified with NaTFSI. (d)EIS spectra of devices with or without NaTFSI treatment." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350536&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350543&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350540&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "最后，为了更加深刻地了解电荷复合对器件性能的影响，我们研究了" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "对光强的依赖关系，可由以下公式表示:" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "nKT" } ] }, { "name": "text", "data": "ln" }, { "name": "italic", "data": [ { "name": "text", "data": "I/q+" } ] }, { "name": "text", "data": "constant。其中," }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "代表斜率," }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "text", "data": "是玻尔兹曼常数," }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "是绝对温度," }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "是元电荷,constant是常数。根据电荷重组动力学," }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "对光强的依赖性与器件中的重组机制对应，当" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "分别等于1和2时，分别表示双分子和陷阱辅助重组" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。从" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "可以看出，与未修饰器件的斜率相比，修饰后器件的效率较接近于1，这说明修饰后器件内部陷阱缺陷辅助复合较弱，证实了NaTFSI修饰可以减少器件内部界面间的缺陷密度。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "NaTFSI修饰前后器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "与光强的依赖关系曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": " values of PSCs with or without NaTFSI treatment as a function of light intensity" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350547&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350555&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350551&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文通过简单的溶液旋涂法在平面TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜上制备一层NaTFSI，用来修饰电子传输层与钙钛矿之间的界面，并将其组装成PSCs。结果表明，引入NaTFSI修饰层不仅可以提高钙钛矿薄膜的结晶性，从而降低钙钛矿薄膜的非辐射复合损失;而且还能优化ETL表面的能级结构，使其与钙钛矿的能级更加匹配，从而加速电子在界面间的提取和传输效率。最终，当NaTFSI浓度为100 mg·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "时，器件的最高" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OC" } ] }, { "name": "text", "data": "达到了1.14 V，相应的PCE值为19.83%，相比于未修饰器件的PCE(18.62%)，其光电性能得到了较大的提高。此外,PCE的箱式图数据表明这一工艺技术的重复性和稳定性良好。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KOJIMA A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TESHIMA K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHIRAI Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al." }, { "name": "text", "data": ". 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