无数据
1.State Key Laboratory of High-power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China
2.School of Science, Changchun University of Science and Technology, Changchun 130022, China
Published:01 May 2021,
Received:09 February 2021,
Revised:20 February 2021,
Scan for full text
Cite this article
Xiang LI, Yu-bin KANG, Ji-long TANG, et al. Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires. [J]. Chinese Journal of Luminescence 42(5):629-634(2021)
Xiang LI, Yu-bin KANG, Ji-long TANG, et al. Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires. [J]. Chinese Journal of Luminescence 42(5):629-634(2021) DOI: 10.37188/CJL.20210059.
0
Views
37
Downloads
0
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution