基于小分子半导体IEICO的高性能倍增型有机光电探测器

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于小分子半导体IEICO的高性能倍增型有机光电探测器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "High Performance Photomultiplication-type Organic Photodetectors Based on Small-molecule Semiconductor IEICO" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "王", "givenname": "建彬", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Jian-bin", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp", "first-author" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "WANG Jian-bin, E-mail: wangjianbinnewlife@foxmail.com", "data": [ { "name": "text", "data": "WANG Jian-bin, E-mail: wangjianbinnewlife@foxmail.com" } ] } ], "bio": [ { "lang": "zh", "text": [ "王建彬(1983-), 男, 福建福州人, 博士, 讲师, 2019年于中国科学院福建物质结构研究所获得博士学位, 主要从事有机光电材料与器件的研究。E-mail:wangjianbinnewlife@foxmail.com" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "王建彬" } ] }, { "name": "text", "data": "(1983-), 男, 福建福州人, 博士, 讲师, 2019年于中国科学院福建物质结构研究所获得博士学位, 主要从事有机光电材料与器件的研究。E-mail:" }, { "name": "text", "data": "wangjianbinnewlife@foxmail.com" } ] ] } ], "email": "wangjianbinnewlife@foxmail.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "唐", "givenname": "孝生", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "TANG", "givenname": "Xiao-sheng", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "周", "givenname": "笔", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHOU", "givenname": "Bi", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "曾", "givenname": "夏辉", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZENG", "givenname": "Xia-hui", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "余", "givenname": "华梁", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YU", "givenname": "Hua-liang", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "周", "givenname": "赢武", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHOU", "givenname": "Ying-wu", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "闽江学院 物理与电子信息工程学院, 福建 福州 350108", "data": [ { "name": "text", "data": "闽江学院 物理与电子信息工程学院, 福建 福州 350108" } ] }, { "lang": "en", "label": "1", "text": "College of Physics&Electronics Information Engineering, Minjiang University, Fuzhou 350108, China", "data": [ { "name": "text", "data": "College of Physics&Electronics Information Engineering, Minjiang University, Fuzhou 350108, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "重庆大学 光电工程学院, 重庆 400044", "data": [ { "name": "text", "data": "重庆大学 光电工程学院, 重庆 400044" } ] }, { "lang": "en", "label": "2", "text": "College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China", "data": [ { "name": "text", "data": "College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "采用溶液法制备了结构为ITO/ZnO/P3HT：IEICO/Al和ITO/PEDOT：PSS/P3HT：IEICO/Al的倍增型有机光电探测器，活性层中电子给体（P3HT）和电子受体（IEICO）的质量比为100：1。以氧化锌（ZnO）为界面层的器件在正向与反向偏压下都能良好工作，而以PEDOT：PSS为界面层的器件只能在反向偏压下工作。-15 V偏压下，与PEDOT：PSS界面层器件相比，ZnO界面层器件的暗电流密度（2.2 μA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）降低4倍以上，1.5 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光照下的光电流密度（3.7 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）提高3倍以上，外量子效率（External quantum efficiency，EQE）平均值（3262%）、响应度平均值（13.3 A/W）和探测灵敏度平均值（1.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones）分别提高4倍、4倍和11倍以上。这些结果表明，以ZnO为倍增型有机光电探测器的界面层，可以降低器件的暗电流密度并提高器件的EQEs，从而显著提高器件的光电性能。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The photomultiplication(PM)-type organic photodetectors(OPDs) with the structures of ITO/ZnO/P3HT:IEICO/Al and ITO/PEDOT:PSS/P3HT:IEICO/Al are fabricated by solution-processing method, respectively. In the active layers, the weight ratio of electron donor and acceptor is 100:1. The OPDs based on a ZnO interfacial layer can work well both under forward and reverse bias voltages, while the OPDs based on a PEDOT:PSS interfacial layer can only work under reverse bias voltages. Under -15 V bias, compared with the PEDOT:PSS interfacial layer-based OPDs, the ZnO interlayer-based OPDs exhibit a more than 4 times smaller dark current density(2.2 μA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "), a more than 3 times larger light current density(3.7 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ") under 1.5 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " light illumination, and more than 4 times larger average external quantum efficiency(3262%) and responsivity(13.3 A/W) with a more than 11 times larger average detectivity(1.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones). These results demonstrate that the ZnO interfacial layer can reduce the dark current density and increase the EQEs of PM-type OPDs significantly, all of which can greatly improve the optoelectronic performance of devices." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "溶液法" } ], [ { "name": "text", "data": "氧化锌" } ], [ { "name": "text", "data": "界面层" } ], [ { "name": "text", "data": "倍增型有机光电探测器" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "solution-processing" } ], [ { "name": "text", "data": "ZnO" } ], [ { "name": "text", "data": "interfacial layer" } ], [ { "name": "text", "data": "photomultiplication-type organic photodetectors" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "光电探测器在机器视觉、荧光显微技术、远程监控和环境检测以及通信等领域起着重要作用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "b1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "b3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "b1", "b2", "b3" ], "text": "1-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。有机光电探测器由于可溶液加工、重量轻、柔性好、光谱响应可调等优点，受到了广泛关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "b4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "b6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "b4", "b5", "b6" ], "text": "4-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。按照工作机理，有机光电探测器可分为二极管型有机光电探测器和倍增型有机光电探测器。二极管型有机光电探测器遵循光伏效应，器件的光电转换效率受光子俘获效率、激子解离效率以及电荷传输和收集效率的影响，外量子效率(EQEs)通常小于100%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "b7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "b7", "b8", "b9" ], "text": "7-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。相对小的EQEs限制了二极管型有机光电探测器的应用。而倍增型有机光电探测器，由于光生电荷被陷在或阻挡在活性层与电极间的界面附近，诱导另一种电荷从外电路隧穿注入活性层中并被相应的电极收集，从而获得远高于100%的EQEs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "b10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "b12", "data": [ { "name": "text", "data": "12" } ] } } ], "rid": [ "b10", "b11", "b12" ], "text": "10-12", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Zhang课题组首次报道了以聚3-己基噻吩(P3HT)和富勒烯衍生物(PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM)(100:1, w/w)为活性层的本体异质结倍增型有机光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "b11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在此基础上，该课题组从器件物理的角度进一步研究了这类倍增型有机光电探测器的工作机理" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "b12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然后，该课题组以醇溶性聚合物(PFN)为界面层制备了可在正向和反向偏压下工作的倍增型有机光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "b13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。相同条件下，与以聚(3, 4-乙烯二氧噻吩):聚苯乙烯磺酸(PEDOT:PSS)为界面层的器件相比，PFN界面层器件的暗电流密度显著降低，但是器件的EQEs也明显下降。理想的倍增型有机光电探测器，希望界面层既能够降低器件的暗电流密度又能够提高器件的EQEs，从而提高器件的光电性能。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "PEDOT:PSS界面层通常作为倍增型有机光电探测器的空穴传输层，有助于外电路隧穿注入的空穴被相应的电极收集" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但是PEDOT:PSS对湿度、氧气以及紫外光比较敏感" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "b15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而氧化锌(ZnO)不仅能够吸收紫外光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "b16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而且有机太阳能电池中的ZnO界面层起到阻挡空穴和传输电子的作用，能有效提升器件的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "b17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "b18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "b17", "b18" ], "text": "17-18", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。ZnO的最高占据分子轨道(HOMO)能级比PEDOT:PSS的HOMO能级深，能降低器件的暗电流并阻挡正向偏压下器件ITO电极上的空穴隧穿注入。溶胶凝胶法制备的ZnO较少用作有机光电探测器特别是倍增型有机光电探测器的界面层。因此，ZnO界面层有望改善倍增型有机光电探测器的性能。Zheng课题组报道了以ZnO为界面层基于小分子半导体O-IDTBR的宽光谱响应(300~800 nm)倍增型有机光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "b19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但ZnO界面层改善基于不同小分子半导体的倍增型有机光电探测器的性能有待进一步验证，且器件对近红外光的响应能力较弱有待进一步提升、器件的光谱响应范围有待进一步拓宽、器件的光电性能有待进一步优化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文以溶胶凝胶法制备的ZnO为界面层，制备了结构为ITO/ZnO/活性层/Al的倍增型有机光电探测器。P3HT和小分子半导体IEICO以100:1的质量比共混作为器件的活性层。由于IEICO具有良好的光伏性能被选为电子受体" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "b20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在20 V偏压下，器件在780 nm处可获得11000%的EQE。器件在正向和反向偏压下都展现出紫外到近红外(300~840 nm)的宽光谱响应。-15 V的偏压下，ZnO界面层器件的暗电流密度(2.2 μA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")、1.5 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "入射光强下的光电流密度(3.7 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")、光谱响应范围内的EQE平均值(3262%)、响应度平均值(13.3 A/W)和探测灵敏度平均值(1.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones)分别是PEDOT:PSS界面层器件的1/5、4.3倍、5.3倍、5.3倍和12.2倍。与PEDOT:PSS界面层相比，ZnO界面层既能降低倍增型有机光电探测器的暗电流密度又能提高器件的光电性能。该方法提供了一种通过选取合适的界面层来提高倍增型有机光电探测器性能的有效策略，并进一步证明ZnO界面层改善倍增型有机光电探测器的性能具有普适性。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "样品制备" } ], "level": "2", "id": "s2-1" } }, { "name": "p", "data": [ { "name": "text", "data": "ITO玻璃(面积41 mm×36 mm，方块电阻≤15 Ω/□)依次用去离子水(含洗涤剂)、丙酮和异丙醇超声波各清洗20 min后，放到烘箱中70 ℃过夜烘干。接着，将烘干的ITO玻璃用紫外臭氧处理10 min。然后，将浓度为0.23 mol/L的ZnO溶液(醋酸锌溶解于2-甲氧基乙醇与乙醇胺的混合液，并搅拌4 h)以2 800 r/min(50 s)旋涂到一部分ITO玻璃上，经110 ℃加热10 min后放到烘箱中200 ℃加热1 h，经自然冷却转移到手套箱中。作为对比，将PEDOT:PSS以5 000 r/min(40 s)旋涂到另一部分ITO玻璃上经120 ℃加热10 min后转移到手套箱中。接着，将搅拌好的P3HT:IEICO(100:1, w/w)混合溶液(40 mg/mL)以600 r/min(25 s)旋涂到ZnO或PEDOT:PSS界面层上形成厚度为250 nm的活性层，经80 ℃加热20 s后转移到镀膜仪中。抽真空达到1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa后，将金属Al蒸镀到活性层上形成80 nm厚的电极。P3HT购买于北京百灵威科技有限公司，IEICO购买于Solarmer Energy Inc.。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "样品表征" } ], "level": "2", "id": "s2-2" } }, { "name": "p", "data": [ { "name": "text", "data": "器件电流密度-电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": ")曲线由安捷伦4155C半导体参数分析仪测量获得，光源来自太阳光模拟器。入射光强通过衰减倍数不同的中性衰减片进行调节。器件EQE光谱由Newport EQE测量系统测量获得(直流稳压电源、器件以及EQE测量系统形成串联电路)。材料的吸收光谱用Lambda365紫外-可见分光光度计在室温下测量。活性层的厚度用Bruker Dektak XT台阶仪测量。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "材料与器件结构" } ], "level": "2", "id": "s3-1" } }, { "name": "p", "data": [ { "name": "text", "data": "分子结构、器件结构以及材料能级示意图如" }, { "name": "xref", "data": { "text": "图 1", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1" } ] } }, { "name": "text", "data": "所示。入射光先被靠近ITO电极的材料吸收，剩余的光才被靠近Al电极的材料吸收。少量的IEICO分子被大量的P3HT分子包围，电子传输通道不连续。由于IEICO与P3HT的最低未占据轨道(LUMO)能级之间约1.05 eV的差异，可将少量的IEICO分子看作电子陷阱。由于ZnO的最高占据分子轨道(HOMO)能级比PEDOT:PSS和P3HT的HOMO能级深约2.6 eV，ZnO界面层能降低器件的暗电流密度并实现器件在双向偏压下良好工作。反向偏压下，外电路隧穿注入活性层的空穴，不仅要克服Al电极功函数与P3HT的HOMO能级之间约0.9 eV的差异，还要克服P3HT的HOMO能级与ZnO的HOMO能级之间约2.6 eV的势垒，才能被ITO电极收集。正向偏压下，外电路空穴隧穿注入势垒为ITO电极功函数与ZnO的HOMO能级之间约3.0 eV的差异。" } ] }, { "name": "fig", "data": { "id": "Figure1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "(a) 分子结构；(b)器件结构示意图；(c)材料能级示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 1" } ], "title": [ { "name": "text", "data": "(a)Structures of molecules. (b)Schematic diagram of device structure. (c)Schematic diagram of material energy levels." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971100&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971100&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971100&type=middle" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "器件电流密度-电压曲线" } ], "level": "2", "id": "s3-2" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图 2(a)", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2(a)" } ] } }, { "name": "text", "data": "为不同入射光强下，结构为ITO/ZnO/P3HT:IEICO(100:1, w/w)/Al的倍增型有机光电探测器的电流密度-电压曲线。器件的暗电流密度(" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": ")都很小，这是由于" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "b13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：(1)少量的受体IEICO被大量的给体P3HT包围，电子传输通道不连续，电子传输形成的电流可忽略不计；(2)暗条件下，大的外电路空穴注入以及传输势垒限制了空穴注入传输形成电流。器件在反向偏压下的暗电流密度略小于正向偏压下的暗电流密度，是由于不同方向偏压下空穴注入传输的势垒不同。相同偏压下，器件的光电流密度(" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": ")比" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "大2~3个数量级。而且，器件的光电流密度随入射光强的增强和偏压的增加而变大，表明从Al或ITO电极隧穿注入活性层的空穴变多" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "b13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在电极附近被陷阱捕获的光生电子越多，P3HT能带弯曲越显著，越有利于外电路空穴隧穿注入活性层。这表明，相同条件下，电极附近光生电子的分布决定了反向偏压下Al电极处和正向偏压下ITO电极处的空穴隧穿注入。相同偏压下，器件的光电流密度随入射光强的增强而增大。这是由于光生电子的数量随入射光强增强而变多，从而被陷阱捕获在电极附近的光生电子增多，能辅助更多的外电路空穴注入活性层进而被相应的电极收集。" } ] }, { "name": "fig", "data": { "id": "Figure2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "电流密度-电压曲线(对数坐标)。(a)ZnO界面层器件；(b)PEDOT:PSS界面层器件；(c)反向偏压下，ZnO与PEDOT:PSS界面层器件的暗电流密度-电压曲线(线性坐标)；(d)1.5 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "入射光强和反向偏压下，ZnO与PEDOT:PSS界面层器件的光电流密度-电压曲线(线性坐标)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 2" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " characteristics(in logarithmic scales). (a)ZnO interfacial layer-based devices. (b)PEDOT:PSS interfacial layer-based devices. (c)" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "-V" } ] }, { "name": "text", "data": " characteristics of devices with ZnO and PEDOT:PSS interfacial layers at reverse bias voltages(in linear scales). (d)" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "L" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "-V" } ] }, { "name": "text", "data": " characteristics of devices with ZnO and PEDOT:PSS interfacial layers at reverse bias voltages and 1.5 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " light illumination(in linear scales)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971103&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971103&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971103&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了研究ZnO界面层对倍增型有机光电探测器性能的影响，制备了结构为ITO/PEDOT:PSS/P3HT:IEICO(100:1, w/w)/Al的倍增型有机光电探测器作为对比。PEDOT:PSS界面层器件的电流密度-电压曲线如" }, { "name": "xref", "data": { "text": "图 2(b)", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2(b)" } ] } }, { "name": "text", "data": "所示，器件仅在反向偏压下才对入射光有响应。这是由于反向偏压下Al电极功函数与P3HT的HOMO能级间的差异(0.9 eV)能够形成外电路空穴隧穿注入势垒，而正向偏压下ITO电极功函数与PEOT:PSS以及P3HT的HOMO能级间的差异(0.4 eV)无法形成有效的外电路空穴隧穿注入势垒。-15 V偏压下，ZnO界面层器件的暗电流密度(2.2 μA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")只是PEOT:PSS界面层器件暗电流密度(11.8 μA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")的1/5，如" }, { "name": "xref", "data": { "text": "图 2(c)", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2(c)" } ] } }, { "name": "text", "data": "所示。这是由于ZnO的HOMO能级比PEOT:PSS以及P3HT的HOMO能级深2.6 eV，能阻碍暗条件下空穴在活性层中的传输。1.5 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "入射光强和-15 V偏压下，ZnO界面层器件的光电流密度(3.7 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")是PEOT:PSS界面层器件光电流密度(0.86 mA /cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")的4.3倍，如" }, { "name": "xref", "data": { "text": "图 2(d)", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2(d)" } ] } }, { "name": "text", "data": "所示。相同条件下，ZnO界面层器件的暗电流密度比PEOT:PSS界面层器件小，但是光电流密度却更大。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "器件光谱响应特性" } ], "level": "2", "id": "s3-3" } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步研究光照条件下，ZnO界面层对器件光电性能的影响，分别测量了ZnO界面层器件与PEDOT:PSS界面层器件的EQE光谱。如" }, { "name": "xref", "data": { "text": "图 3(a)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(a)" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "(b)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "(b)" } ] } }, { "name": "text", "data": "所示，ZnO界面层器件在反向和正向偏压下都展现出300~840 nm的宽光谱响应，表明器件在双向偏压下都能良好工作。器件的EQEs(" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": ")可通过以下公式计算获得" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "b13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } } ], "rid": [ "b13", "b14" ], "text": "13-14", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：" } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "1" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971107&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971107&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971107&type=middle" } } } ], "id": "fgxb-42-2-241-E1" } }, { "name": "text", "data": " " } ] }, { "name": "fig", "data": { "id": "Figure3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "ZnO界面层器件的EQE光谱(对数坐标):(a)反向偏压, (b)正向偏压；(c)PEDOT:PSS界面层器件的EQE光谱(对数坐标)；(d)-15 V偏压下，ZnO与PEDOT:PSS界面层器件的EQE光谱(线性坐标)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 3" } ], "title": [ { "name": "text", "data": "EQE spectra of ZnO interfacial layer-based devices(in logarithmic scales): (a)at reverse bias voltages, (b)at forward bias voltages. (c)EQE spectra of PEDOT:PSS interfacial layer-based devices(in logarithmic scales). (d)EQE spectra of devices with ZnO and PEDOT:PSS interfacial layers at -15 V bias(in linear scales)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971110&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971110&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971110&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "为普朗克常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "为光子频率，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "in" } ] }, { "name": "text", "data": "为入射光强，" }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "是单电子电量的绝对值。ZnO界面层器件在不同偏压与波长处的EQEs如" }, { "name": "xref", "data": { "text": "表 1", "type": "table", "rid": "Table1", "data": [ { "name": "text", "data": "表 1" } ] } }, { "name": "text", "data": "所示。相同条件下，器件在正向偏压下的EQEs大于反向偏压下的EQEs，与器件在正向偏压下的光电流密度大于反向偏压下的光电流密度一致。这是由于正向偏压下被捕获在ITO电极附近的光生电子的数目比反向偏压下被捕获在Al电极附近的光生电子数目多。器件的EQEs随着偏压的增加而显著增大，主要归因于" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "b13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } } ], "rid": [ "b13", "b14" ], "text": "13-14", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：(1)空穴在活性层中的传输速率随外加偏压的增大逐渐增加" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "b10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "; (2)随着外加偏压的增大，往电极方向移动的光生电子变多，被分布在电极附近的陷阱捕获的光生电子越多; (3)活性层中P3HT的能带随着外加电场的增强会弯曲得更显著，有利于外电路空穴隧穿注入。反向偏压下，器件EQE光谱在可见光范围内有一明显的凹陷，该凹陷的波长分布范围与P3HT的吸收光谱相对应, 材料的吸收光谱如" }, { "name": "xref", "data": { "text": "图 4", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4" } ] } }, { "name": "text", "data": "所示。波长为500 nm左右的入射光先被ITO电极附近的P3HT吸收，到达Al电极附近的光较少。因此，波长为500 nm左右的入射光被P3HT吸收产生的光生电子主要分布(被电子陷阱捕获)在ITO电极附近，而分布在Al电极附近的光生电子较少。然而，反向偏压下外电路空穴隧穿注入主要由分布在Al电极附近的光生电子决定。因此，反向偏压下ZnO界面层器件的EQE光谱在500 nm左右有个凹陷，与反向偏压下PEDOT:PSS界面层器件的EQE光谱形状相似，如" }, { "name": "xref", "data": { "text": "图 3(c)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(c)" } ] } }, { "name": "text", "data": "所示。并且，凹陷会随着偏压的增加而变浅。这是由于更多被陷阱捕获在ITO电极附近的光生电子会随着偏压的增加向Al电极移动，并被Al电极附近的陷阱捕获，以辅助外电路空穴隧穿注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。正向偏压下，ZnO界面层器件在780 nm处获得的最高EQE为11000%，表明器件对近红外光有较强的响应能力。-15 V偏压下，ZnO界面层器件在300~840 nm范围内的EQE平均值(3262%)是相同条件下PEDOT:PSS界面层器件(621%)的5.3倍。如" }, { "name": "xref", "data": { "text": "图 3(d)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(d)" } ] } }, { "name": "text", "data": "所示，与-15 V偏压下的PEDOT:PSS界面层器件相比，相同偏压下的ZnO界面层对器件短波长范围EQEs的提升明显大于对长波长范围EQEs的提升。这是由ZnO界面层吸收紫外光产生光生载流子参与输运引起的。ZnO界面层器件在15 V偏压下的EQE平均值(13212%)是-15 V偏压下器件EQE平均值的4倍，主要归因于：(1)光从ITO电极入射，先被ITO电极附近的材料吸收，产生的光生电子多数被陷阱捕获在ITO电极附近，辅助外电路空穴隧穿注入；(2)正向偏压下，被陷阱捕获在Al电极附近的光生电子可从Al电极附近移动到ITO电极附近，辅助外电路空穴隧穿注入；(3)ZnO界面层吸收紫外光产生光生载流子参与输运。特别是短波长范围内(300~400 nm)ZnO界面层器件EQEs随偏压的增加提升更为显著，与ZnO的吸收光谱相对应。并且，ZnO的吸收光谱与P3HT以及IEICO的吸收光谱能形成较好的互补。器件EQE光谱在600~700 nm间的下降是由于IEICO的比例(~1%)远小于P3HT的比例(~100%)。" } ] }, { "name": "table", "data": { "id": "Table1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "ZnO和PEDOT:PSS界面层器件在不同偏压与不同波长处的EQEs" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 1" } ], "title": [ { "name": "text", "data": "EQEs of devices with ZnO and PEDOT:PSS interfacial layers at different bias voltages and different wavelengths" } ] } ], "note": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "sup", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "ZnO界面层器件；" }, { "name": "sup", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": "PEDOT:PSS界面层器件，只能在反向偏压下工作。" } ] } ] } ], "table": [ { "head": [ [ { "align": "center", "style": "class:table_top_border", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "/nm" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "EQE at" }, { "name": "text", "data": "" }, { "name": "text", "data": "-10 V/%" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "EQE at" }, { "name": "text", "data": "" }, { "name": "text", "data": "-15 V/%" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "EQE at" }, { "name": "text", "data": "" }, { "name": "text", "data": "-20 V/%" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "EQE at" }, { "name": "text", "data": "" }, { "name": "text", "data": "10 V/%" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "EQE at" }, { "name": "text", "data": "" }, { "name": "text", "data": "15 V/%" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "EQE at" }, { "name": "text", "data": "" }, { "name": "text", "data": "20 V/%" } ] } ] ], "body": [ [ { "align": "center", "style": 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"data": [ { "name": "text", "data": "b" } ] } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "46" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "189" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "591" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [] }, { "align": "center", "style": "class:table_bottom_border", "data": [] }, { "align": "center", "style": "class:table_bottom_border", "data": [] } ] ], "foot": [] } ] } }, { "name": "fig", "data": { "id": "Figure4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "ZnO、P3HT和IEICO薄膜的归一化吸收光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 4" } ], "title": [ { "name": "text", "data": "Normalized absorption spectra of ZnO, P3HT and IEICO thin films." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971114&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971114&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971114&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "响应度(Responsivity, " }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")和探测灵敏度(Detectivity, " }, { "name": "italic", "data": [ { "name": "text", "data": "D" }, { "name": "sup", "data": [ { "name": "text", "data": "*" } ] } ] }, { "name": "text", "data": ")也是评价光电探测器性能的重要指标，可通过以下公式计算获得：" } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "2" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971118&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971118&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971118&type=middle" } } } ], "id": "fgxb-42-2-241-E2" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": " " }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "3" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971123&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971123&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971123&type=middle" } } } ], "id": "fgxb-42-2-241-E3" } }, { "name": "text", "data": " " } ] }, { "name": "p", "data": [ { "name": "text", "data": "器件的响应度与探测灵敏度光谱的形状和EQE光谱形状相似，如" }, { "name": "xref", "data": { "text": "图 5", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5" } ] } }, { "name": "text", "data": "所示。-15 V偏压下，ZnO界面层器件在300~840 nm范围内的响应度平均值(13.3 A/W)与探测灵敏度平均值(1.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones)分别是相同条件下PEDOT:PSS界面层器件响应度平均值(2.5 A/W)与探测灵敏度平均值(1.3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": " Jones)的5.3倍和12.2倍。15 V偏压下, ZnO界面层器件的响应度平均值(50.4 A/W)与探测灵敏度平均值(4.2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones)分别是-15 V偏压下器件的3.8倍和2.6倍。" }, { "name": "xref", "data": { "text": "表 2", "type": "table", "rid": "Table2", "data": [ { "name": "text", "data": "表 2" } ] } }, { "name": "text", "data": "列出了±15 V偏压下ZnO界面层器件与-15 V偏压下PEDOT:PSS界面层器件在不同波长处的响应度与探测灵敏度。" } ] }, { "name": "fig", "data": { "id": "Figure5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "ZnO(±15 V)与PEDOT:PSS(-15 V)界面层器件。(a)响应度光谱；(b)探测灵敏度光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 5" } ], "title": [ { "name": "text", "data": "Responsivity(a) and Detectivity(b) spectra of ZnO interfacial layer-based devices(under ±15 V bias) and PEDOT:PSS interfacial layer-based devices(under -15 V bias)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971126&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971126&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971126&type=middle" } ] } }, { "name": "table", "data": { "id": "Table2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "±15 V偏压下ZnO界面层器件与-15 V偏压下PEDOT:PSS界面层器件在不同波长处的响应度与探测灵敏度" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 2" } ], "title": [ { "name": "text", "data": "Responsivity and detectivity of ZnO interfacial layer-based devices(under ±15 V bias) and PEDOT:PSS interfacial layer-based devices(under -15 V bias) at different wavelengths" } ] } ], "note": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "sup", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "ZnO界面层器件；" }, { "name": "sup", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": "PEDOT:PSS界面层器件，只能在反向偏压下工作。" } ] } ] } ], "table": [ { "head": [ [ { "align": "center", "style": "class:table_top_border", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "/ nm" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", 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"给出了器件在光照和不同方向偏压下的载流子传输示意图。电极附近陷阱捕获光生电子产生的静电场能引起P3HT能带弯曲，以辅助外电路空穴隧穿注入，即电极附近被捕获的光生电子越多越有利于外电路空穴隧穿注入。因此，光生电子的分布以及空穴隧穿注入势垒共同决定偏压和光照下外电路隧穿注入空穴的数量。此外，外加偏压产生的电场方向与静电场方向一致，有利于光生电子移动以及外电路空穴隧穿注入与传输。光照下，带有足够能量的光子被ZnO吸收后，电子跃迁到LUMO能级上而空穴留在HOMO能级上。反向偏压产生的电场能迫使ZnO的HOMO能级上的光生空穴传输到ITO电极上参与载流子输运，而光生电子由于活性层中的电子传输通道不连续被累积在LUMO能级上，如" }, { "name": "xref", "data": { "text": "图 6(a)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(a)" } ] } }, { "name": "text", "data": "所示。同时，ZnO的LUMO能级上累积的光生电子可能也会辅助空穴从Al电极隧穿注入活性层。反向偏压下，ZnO界面层器件的EQEs随偏压增加而显著增大(载流子倍增)，主要归因于：(1)空穴在活性层中的传输速率随偏压增大而变快；(2)Al电极附近的陷阱捕获的光生电子随偏压增大而增多；(3)偏压的增大能促进ZnO中光生电子和空穴的分离，并增大参与载流子输运的光生空穴的传输速率。因此，ZnO界面层器件的EQEs显著大于相同条件下PEDOT:PSS界面层器件的EQEs，特别是在短波长范围内。此外，正向偏压产生的电场会迫使ZnO的HOMO能级上的光生空穴传输到P3HT的HOMO能级上参与载流子输运，而光生电子被传输到ITO电极上参与载流子输运，如" }, { "name": "xref", "data": { "text": "图 6(b)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(b)" } ] } }, { "name": "text", "data": "所示。正向偏压下，ZnO界面层器件的EQEs随偏压增加而显著增大(载流子倍增)，主要归因于：(1)空穴在活性层中的传输速率随偏压增大而变快；(2)ITO电极附近的陷阱捕获的光生电子随偏压增大而增多；(3)偏压的增大能促进ZnO中光生电子和空穴的分离，并增大参与载流子输运的光生电子与空穴的传输速率。" } ] }, { "name": "fig", "data": { "id": "Figure6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "ZnO界面层器件在光照下的载流子传输示意图。(a)反向偏压；(b)正向偏压。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 6" } ], "title": [ { "name": "text", "data": "Schematic transport diagrams of charge carriers in ZnO interfacial layer-based devices under light illumination. (a)At reverse bias voltages. (b)At forward bias voltages." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971130&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971130&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971130&type=middle" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文以溶胶凝胶法制备的ZnO为界面层，制备了结构为ITO/ZnO/P3HT:IEICO(100:1, w/w)/Al的倍增型有机光电探测器。器件在正向与反向偏压下都能良好工作，均展现出300~840 nm的宽光谱响应，获得低暗电流密度的同时器件EQEs≫100%。在外加偏压和光照下，器件在近红外光区可获得最高为11000%的EQE。与-15 V偏压下相同结构的PEDOT:PSS界面层器件相比，ZnO界面层器件在相同偏压下的暗电流密度(2.2 μA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")降低4倍以上，1.5 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "入射光强下的光电流密度(3.7 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")提高3倍以上，同时光谱响应范围内的EQE平均值(3262%)、响应度平均值(13.3 A/W)和探测灵敏度平均值(1.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones)分别提升了4倍、4倍和11倍以上。这些结果表明，ZnO作为倍增型有机光电探测器的界面层，可以降低器件的暗电流密度并提高器件的EQEs，从而显著提升器件的光电性能。并且，ZnO界面层改善倍增型有机光电探测器的性能具有普适性。采用吸收光谱与P3HT更互补的IEICO作为电子受体能拓宽器件的光谱响应范围，并提升器件对近红外光的响应能力。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "b1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LI D B, JIANG K, SUN X J, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. 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