锑化物Ⅱ类超晶格材料外延生长、结构及光学特性研究进展

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "锑化物Ⅱ类超晶格材料外延生长、结构及光学特性研究进展" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "刘", "givenname": "胜达", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Sheng-da", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "刘胜达(1996－), 男, 吉林长春人, 硕士研究生, 2019年于长春理工大学获得学士学位, 主要从事锑化物半导体超晶格物性分析方面的研究。E-mail:liushengda16@163.com" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "刘胜达" } ] }, { "name": "text", "data": "(1996－), 男, 吉林长春人, 硕士研究生, 2019年于长春理工大学获得学士学位, 主要从事锑化物半导体超晶格物性分析方面的研究。E-mail:" }, { "name": "text", 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"givenname": "Zhi-peng", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "长春理工大学理学院 高功率半导体激光国家重点实验室, 吉林 长春 130022", "data": [ { "name": "text", "data": "长春理工大学理学院 高功率半导体激光国家重点实验室, 吉林 长春 130022" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of High Power Semiconductor Laser, College of Science, Changchun University of Science and Technology, Changchun 130022, China", "data": [ { "name": "text", "data": "State Key Laboratory of High Power Semiconductor Laser, College of Science, Changchun University of Science and Technology, Changchun 130022, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "香港中文大学(深圳) 理工学院, 广东 深圳 518172", "data": [ { "name": "text", "data": "香港中文大学(深圳) 理工学院, 广东 深圳 518172" } ] }, { "lang": "en", "label": "2", "text": "School of Science and Engineering, The Chinese University of Hong Kong(Shenzhen), Shenzhen 518172, China", "data": [ { "name": "text", "data": "School of Science and Engineering, The Chinese University of Hong Kong(Shenzhen), Shenzhen 518172, China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "北京有色金属研究总院 智能传感功能材料国家重点实验室, 北京 100088", "data": [ { "name": "text", "data": "北京有色金属研究总院 智能传感功能材料国家重点实验室, 北京 100088" } ] }, { "lang": "en", "label": "3", "text": "State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China", "data": [ { "name": "text", "data": "State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China" } ] } ] }, { "id": "aff4", "intro": [ { "lang": "zh", "label": "4", "text": "哈尔滨工业大学 材料科学与工程学院, 黑龙江 哈尔滨 150001", "data": [ { "name": "text", "data": "哈尔滨工业大学 材料科学与工程学院, 黑龙江 哈尔滨 150001" } ] }, { "lang": "en", "label": "4", "text": "School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China", "data": [ { "name": "text", "data": "School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "近年来，锑化物Ⅱ类超晶格材料在外延生长和发光性质等方面的研究取得了巨大的进步，为获得高性能中红外波段光电子器件奠定了重要的基础。然而，由于传统的InAs/GaSb体系超晶格材料中内部本征Ga原子缺陷的存在，使得InAs/GaSb材料的少子寿命过短，严重影响了光电子器件性能的提升，因此设计并生长具有长少子寿命的新材料体系超晶格材料具有重要的研究意义。本文对现阶段锑化物Ⅱ类超晶格材料的各类材料体系进行了总结和分析，着重强调了各类材料体系的外延生长条件、结构及光学特性等方面的研究进展，并对锑化物Ⅱ类超晶格材料今后的发展进行了展望。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "In recent years, antimonide type-Ⅱ superlattices have a great progress in the epitaxial growth and luminescence property research, which has laid an important foundation for the research of high-performance middle infrared band optoelectronic devices. However, due to the existence of intrinsic Ga atomic defects, the traditional InAs/GaSb system superlattice materials make the minority life of InAs/GaSb materials too short, which seriously affects the performance improvement of optoelectronic devices. Therefore, it is of great significance to design and grow new material system superlattice materials with long minor carrier lifetime. This paper summarizes and analyzes the various materials systems of antimonide type-Ⅱ superlattice materials at present, emphasizes the development of epitaxial growth conditions, structure and optical properties of various material systems, and gives a prospect for the future development of antimonide type-Ⅱ superlattice materials." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "锑化物" } ], [ { "name": "text", "data": "超晶格" } ], [ { "name": "text", "data": "分子束外延" } ], [ { "name": "text", "data": "少子寿命" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "antimonide" } ], [ { "name": "text", "data": "superlattice" } ], [ { "name": "text", "data": "molecular beam epitaxy" } ], [ { "name": "text", "data": "minor carrier lifetime" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体超晶格材料是制备光电子器件的基础，具有带隙可调谐、迁移率高等特点，引起了广大学者的研究兴趣。1970年，Esaki和Ysu首先提出了超晶格概念" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "b1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，经过几十年的发展，超晶格材料在质量和器件性能方面都得到了很大程度的提升。目前，超晶格结构半导体光电子器件已经进入了全新的发展时期" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "b2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "b4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "b2", "b3", "b4" ], "text": "2-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "现阶段对于超晶格结构的研究工作主要集中在材料体系和维度方面。在扩展超晶格的材料体系方面，已经由传统的Ⅱ-Ⅵ族" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "b5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、Ⅲ-Ⅴ族、Ⅳ-Ⅳ族" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "b6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "半导体超晶格向新的材料系扩展，如ZnSe/(CdSe)" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "m" } ] } ] }, { "name": "text", "data": "(ZnSe)" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "n" } ] } ] }, { "name": "text", "data": "、InAs/GaSb、Si/SiGe等。在材料维度方面，超晶格材料已经发展了二维层超晶格和三维体超晶格，如石墨烯的二维超晶格" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "b7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。材料体系及维度的改变均赋予并拓展了半导体超晶格材料的物理和化学性能，并使其在光电子与微电子领域展现了巨大的应用前景，如" }, { "name": "xref", "data": { "text": "图 1", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "Figure1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "二维、三维超晶格结构与应用。(a)二维超晶格材料ZnO-石墨烯可以在可见到近红外波段较宽的波长范围激发出表面等离子体" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "b8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，光激发该超晶格材料可以得到波长可调的拉曼纳米激光；(b)在二维过渡金属硫族化合物(2D-TMDs)上克服了石墨烯没有带隙的缺点而保持了柔性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、原子级厚度等优点，并且在从块状变向单层时，能带结构持续变化，最终从间接带隙半导体转变成单层的直接带隙半导体；(c)在小角度扭曲的双分子层石墨烯(TBBG)中证明了自旋极化基态的存在" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "b10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(d)三维超晶格中，利用超晶格相变材料解决了大数据时代的存储器高速、高密度、低消耗条件中的低消耗问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "b11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(e)~(f)Ⅱ类超晶格光电探测器结构图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "b12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 1" } ], "title": [ { "name": "text", "data": "Two-dimensional and three-dimensional superlattice structures and applications. (a)ZNO-graphene, a two-dimensional superlattice material, can excite surface plasmas in a wide wavelength range visible to near-infrared band" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "b8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". Photoexcitation of the superlattice material can obtain Raman nanometer laser with adjustable wavelength. (b)Two-dimensional transition metal disulphides compound(2D-TMDs) overcomes the disadvantages of graphene having no band gap and maintains its flexibility" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ", atomic thickness and other advantages. In addition, when the band structure changes continuously from blockers to monolayers, the band structure eventually changes from indirect bandgap semiconductors to monolayer direct bandgap semiconductors. (c)Demonstrated the existence of spin-polarized ground states in small-angle twisted bimolecular graphene(TBBG)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "b10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (d)In three-dimensional superlattices, the problems of low consumption in high speed, high density and low consumption of memory in the era of big data are solved by using phase change materials of superlattices" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "b11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (e)-(f)Type-Ⅱ superlattice photoelectric detector structure" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "b12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970963&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970963&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970963&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在众多的半导体超晶格材料中，基于Ⅲ-Ⅴ族的半导体超晶格材料，因其能带宽度可覆盖1.7~0.1 eV，已经成为红外波段光电子器件的首选核心材料，广泛应用于医疗诊断、污染监测、激光制导和光电对抗等重要的民用和军用领域。目前，在高性能光电子器件快速发展的需求下，通过对超晶格材料外延生长条件、结构及光学特性等方面的优化和提升，使得红外探测器已经进入了大规模、高分辨率、多波段、高集成、轻型化和低成本的第三代焦平面时代" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "b13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "b15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "b13", "b14", "b15" ], "text": "13-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由于红外探测器具有灵敏度高、误报率小等独特的优点，使其在红外对抗、热成像、空气监测和空间通讯等方面有广泛的潜在应用价值" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "b16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前, 红外探测器已经成为广大光电子器件研究者驻足的热点。红外光可以分为近红外(波长范围780 nm~3 μm)、中红外(波长范围3~50 μm)以及远红外(波长范围50~1 000 μm)。红外光在现代医学、生活、军事与工业上都有着重要的应用，如" }, { "name": "xref", "data": { "text": "图 2", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2" } ] } }, { "name": "text", "data": "所示。在现代医学手段中，利用4~14 μm波段的红外光具有极强穿透深度的特性，对人体细胞进行促进，使得血液循环加速并提高了人体免疫力；在大气污染物监测手段中，可以利用红外光的传感特性，对CO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "气体含量和雾霾浓度进行探测；在军事上，可以利用中红外探测器进行红外对抗、热成像和空间光通讯；在工业上，也可以对气体泄露进行痕量检测。鉴于红外光重要的军事和民用价值，锑化物Ⅱ类超晶格作为Ⅲ-Ⅴ族中的重要成员，在晶格体系中扮演着重要角色。随着锑基Ⅲ-Ⅴ族超晶格材料在红外探测领域应用之后，更大像素数量、更高帧数率、更好热分辨率、更多色功能以及其他功能的红外探测器被研制出来，尽管这些材料具有较强的机械强度，但对带隙的依赖性却较弱，极大程度拓展了红外光波的应用领域。在随后几十年的研究工作中，人们发现锑化物Ⅱ类超晶格材料具有带隙波长可调(3~30 μm)、量子效率高和轻重空穴带分离等独特的物理性质, 在新一代中红外光学技术发展中具有非常重要的地位。目前，国内如中国科学院半导体研究所和中国科学院上海技术物理研究所在锑化物Ⅱ类超晶格材料生长" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "b17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "b18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "b17", "b18" ], "text": "17-18", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、物性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "b19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "b20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "b19", "b20" ], "text": "19-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研究与器件应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "b21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "b22", "data": [ { "name": "text", "data": "22" } ] } } ], "rid": [ "b21", "b22" ], "text": "21-22", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "方面均有重大进展。" } ] }, { "name": "fig", "data": { "id": "Figure2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "红外探测器的应用。(a)近红外人脸识别；(b)体温测量；(c)气体泄漏检测；(d)CO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "气体探测；(e)红外空间对抗技术；(f)红外促进血液循环。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 2" } ], "title": [ { "name": "text", "data": "Applications of infrared detectors. (a)Near-infrared face recognition. (b)Temperature measurement. (c)Gas leak detection. (d)CO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " gas detection. (e)Infrared space countermeasures. (f)Infrared promoting blood circulation." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970967&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970967&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970967&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在锑化物Ⅱ类超晶格材料研究中，最早的一种是1977年" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "b23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "b25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "b23", "b24", "b25" ], "text": "23-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "提出的InAs/GaSb体系超晶格，其优势在于具有较大的价带偏移和高吸收效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "b23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，然而其少数载流子寿命过短，造成器件暗电流过高；另一种超晶格材料是InAs/InAsSb体系，该超晶格材料具有较长的少数载流子寿命，并且利用该材料制作的探测器可在较长波长范围内进行探测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "b26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但是它的吸收效率和空穴迁移率较低，对其应用有一定的影响；继而研究人员又关注了InGaAs/InAsSb锑化物Ⅱ类超晶格材料，随着Ga元素合并到InAs层中，材料的吸收系数、红外吸收性能以及空穴迁移率均得到了提高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "b27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，又出现了一类新的锑化物Ⅱ类四元合金超晶格结构，该超晶格结构在光学特性上具有发光响应强的突出优越性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "b28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，对这几种锑化物Ⅱ类超晶格材料的研究主要围绕在外延生长方式和物性研究方面展开。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文首先从国内外锑化物Ⅱ类超晶格材料的外延生长和物性研究进展出发，概述了超晶格材料的生长条件和表征方式，着重介绍了利用分子束外延生长方式制备的锑化物Ⅱ类超晶格材料的生长效率，通过X射线衍射光谱对超晶格材料的结构、生长质量进行分析，讨论了不同材料体系锑化物Ⅱ类超晶格的物性优势。同时利用光谱发光特性对锑化物Ⅱ类超晶格少子寿命进行分析，总结了影响载流子寿命的影响因素；并对不同结构的超晶格吸收特性影响因素也进行了介绍；最后对最新提出的四元合金层锑化物Ⅱ类超晶格材料InAs(Sb)/InGaAsSb的未来发展做出了展望。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "锑化物Ⅱ类超晶格的外延生长" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "1970年，美国实验室的江崎与朱兆祥首次提出半导体超晶格的概念" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "b1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，设想用两种晶格匹配很好的半导体材料A与B交替生长出周期性半导体结构，得到的新晶格结构周期尺寸比原晶格常数要大得多，而这种超晶格材料具有的光电特性与其结构特性密不可分，所以超晶格材料的实现，取决于超晶格材料生长的精确控制。锑化物Ⅱ类超晶格体系生长的方法有金属有机气相沉积" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "b29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "b30", "data": [ { "name": "text", "data": "30" } ] } } ], "rid": [ "b29", "b30" ], "text": "29-30", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和分子束外延技术(MBE)。在控制超晶格精确生长方面，MBE凭借其在材料厚度、掺杂浓度以及组分等方面精确控制的能力，有力地推动了超晶格材料的发展。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "目前MBE技术是锑化物Ⅱ类超晶格材料外延生长最常用的手段，下面将对三类锑化物Ⅱ类超晶格材料InAs/GaSb、InAs/InAsSb和InGaAs/InAsSb的外延生长条件和结构表征手段进行详细论述。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "InAs/GaSb体系外延生长与界面调控" } ], "level": "2", "id": "s2-1" } }, { "name": "p", "data": [ { "name": "text", "data": "在InAs/GaSb超晶格体系生长研究中，涉及到的GaSb和InAs材料均为闪锌矿结构，它们是立方晶系，面心立方点阵。InAs的晶格常数是0.605 8 nm，而GaSb的晶格常数是0.609 6 nm。由于InAs的晶格常数比GaSb小0.6%，选择合适的交界面层可以有效地补偿晶格失配。GaSb在0 K时带隙为0.822 eV，在300 K时带隙为0.725 eV" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "b31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "b33", "data": [ { "name": "text", "data": "33" } ] } } ], "rid": [ "b31", "b32", "b33" ], "text": "31-33", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，InAs在室温下带隙为0.356 eV。GaSb和InAs半导体原子的球棍模型示意图如" }, { "name": "xref", "data": { "text": "图 3(a)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(a)" } ] } }, { "name": "text", "data": "所示，所以GaSb和InAs材料可以实现较好的晶格匹配。" } ] }, { "name": "fig", "data": { "id": "Figure3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "超晶格的外延生长手段。(a)半导体GaSb、InAs球棍模型的闪锌矿结构，Ga、In、Sb、As原子分别用浅蓝色、浅紫色、橙色、白色小球表示；(b)InAs/GaSb超晶格界面类型；(c)InAs/GaSb超晶格快门生长顺序" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "b39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(d)10周期、20周期InAs/GaSb(10/10 MLs)表征" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "b39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 3" } ], "title": [ { "name": "text", "data": "Epitaxial growth of superlattices. (a)Sphalerite structure of semiconductor GaSb and InAs ball stick model, Ga, In, Sb and As atoms are respectively represented by light blue, light purple, orange and white balls. (b)InAs/GaSb superlattice interface types. (c)InAs/GaSb superlattice shutter growth sequence" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "b39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (d)10 and 20 cycles InAs/GaSb(10/10 MLs) characterization" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "b39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970972&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970972&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970972&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在InAs/GaSb超晶格材料体系中，由于InAs和GaSb两层材料没有共用的原子，因此在界面处可以存在不同的原子排列方式，从而形成不同的界面结合类型(如" }, { "name": "xref", "data": { "text": "图 3(b)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(b)" } ] } }, { "name": "text", "data": "所示)。如果界面处的GaSb层中的Sb原子和InAs层中的In原子键合，则在界面处形成一个原子层的InSb，称为InSb型界面；反之如果GaSb层中的Ga原子和InAs层中的As原子键合，则在界面处形成GaAs型界面。界面处的Sb和In偏析会导致材料质量下降，所以不同的界面类型将对超晶格的应变以及能带结构产生重要的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "b34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "b36", "data": [ { "name": "text", "data": "36" } ] } } ], "rid": [ "b34", "b35", "b36" ], "text": "34-36", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，研究工作主要集中在寻求适合InAs/GaSb超晶格的类InSb界面" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "b37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "b38", "data": [ { "name": "text", "data": "38" } ] } } ], "rid": [ "b37", "b38" ], "text": "37-38", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而合适的Ⅲ/Ⅴ束流比和优化的源快门顺序是形成类InSb界面的必要条件。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "利用MBE技术生长InAs/GaSb时，需要将超晶格生长在晶格匹配的衬底上。由于GaAs衬底具有质量好、价格低廉等优点，因而被广泛应用。但由于晶格失配较大，所以在衬底上需要生长GaSb缓冲层，而后在GaSb缓冲层上再生长InAs/GaSb超晶格结构。但是，由于GaAs衬底与GaSb薄膜层之间的晶格失配度高达7.8%，失配引起的螺旋位错密度高达10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "，进而产生较多的生长缺陷，这些缺陷严重影响InAs/GaSb超晶格材料的光学和电学特性。目前，衬底选择GaSb就可以很好地解决这一问题。为了获得高质量超晶格材料，在生长过程中，需要对衬底的脱氧化层温度、生长温度、Ⅴ/Ⅲ族束流比、生长速率等参数进行调整和优化，为下一步制备高质量的超晶格器件提供坚实的实验基础。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "利用MBE技术在GaSb衬底上生长Ⅱ类InAs/GaSb超晶格材料时，由于生长中衬底的生长温度不高(520 ℃)，能够通过切换源快门方式获得所需类型和精细度的膜层。我们研究组通过控制快门开关顺序，利用Ⅴ族元素浸渍，实现As与Sb高效率的置换，从而形成可控制的界面类型。具体过程如" }, { "name": "xref", "data": { "text": "图 3(c)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(c)" } ] } }, { "name": "text", "data": "所示，生长InAs层进行As保护、生长GaSb层进行Sb保护的浸渍方式，当生长完GaSb缓冲层之后，关闭Ga源，开启In源，形成类InSb层界面后关闭In源，此时Sb源仍然开启，保持Sb浸渍10 s后关闭。随后开启As源，再开In源，生长完InAs层后关闭In源，保持As浸渍一段时间后关闭开关，同时开启Sb源，开始下一个周期的超晶格生长。在生长过程中，每一层材料生长的温度、生长的速率以及Ⅲ-Ⅴ族束流比都需要精确控制。MBE生长得到的超晶格结构，需要利用X射线衍射(XRD)分析样品界面结构与结构质量，进而对样品的质量进行评价" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "b39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "利用XRD对样品进行测试表征得到的结果如" }, { "name": "xref", "data": { "text": "图 3(d)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(d)" } ] } }, { "name": "text", "data": "所示，该样品是周期数分别为10和20的InAs/GaSb(10/10 MLs)超晶格。2" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "代表入射光和反射光的夹角，图中可以看出两个材料的卫星峰都达到了±3级，说明材料具有较弱的外延层弛豫现象。20周期的XRD光谱图像中没有+3级峰，这是因为外延层的强度掩盖了强度较小的衍射峰。经计算，我们得到10周期超晶格材料半峰宽(FWHM)为0.132°，20周期超晶格材料的FWHM为0.150°。通过X射线衍射分析得出，利用MBE生长的超晶格材料具有应力相对较小、外延层各周期厚度均匀、一致的特点。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过XRD光谱，我们可以计算出超晶格的应变力、层厚度等结构信息。利用0级峰和衬底峰的位置关系，通过公式(1)和(2)可计算得到超晶格的平均应变" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "text", "data": "和周期厚度" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "：" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "1" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970978&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970978&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970978&type=middle" } } } ], "id": "fgxb-42-2-165-E1" } } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "2" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970982&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970982&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970982&type=middle" } } } ], "id": "fgxb-42-2-165-E2" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "为GaSb衬底的布拉格角；Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "为0级峰与衬底峰的角间距；Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "为超晶格衍射峰的角间距；" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "为X射线的波长。利用我们得到的XRD光谱和公式(1)、(2)计算出两个材料与衬底的应变分别为0.56%和0.64%，周期层厚度分别为6.19 nm和6.17 nm。在超晶格生长过程中，一般采用两种方式来实现超晶格低应变：一种是利用生长中断法生长类InSb界面层；一种是通过控制开关在实现生长中断的同时进行Ⅴ族元素浸渍。最终实现衬底与外延层间的应力降低，使得生长出的超晶格各周期相对均匀且表面粗糙度也较小，为超晶格器件的优良特性奠定了基础。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "InAs/InAsSb体系外延生长与组分控制" } ], "level": "2", "id": "s2-2" } }, { "name": "p", "data": [ { "name": "text", "data": "综上所述，InAs/GaSb体系在生长制备手段及界面控制性能方面得到了显著的提升，但是在InAs/InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "体系中，随着Sb组分的增加，晶格失配也会迅速增大。在三元合金InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "中Sb的组分为0时，超晶格的晶格失配度为0；Sb组分为35%时，超晶格的晶格失配度为2.49%。这使得高质量InAs/InAsSb超晶格的外延生长相对困难。相比InAs/GaSb体系，InAs/InAsSb体系超晶格在设计过程中，为了保持应变平衡，其需要更合适的层厚组合以及与之匹配的合金组分(InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "合金中Sb组分)。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了获得低位错密度的高质量材料，美国Olson与Cellek等在应变平衡Ⅱ类超晶格设计中，使用InAs和InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "在GaSb上的临界厚度作为层厚度的限制" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "b40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "b42", "data": [ { "name": "text", "data": "42" } ] } } ], "rid": [ "b40", "b41", "b42" ], "text": "40-42", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这样就可以确保通过MBE技术得到的锑化物Ⅱ类InAs/InAsSb超晶格材料具有较高的质量。在常规固态源分子束外延生长中，一般通过快速切换生长室内As" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的通量，即As" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "束流比来实现Ⅴ族元素合金比例的控制，其中快门操作时间是影响束流比的最重要因素之一。然而由于存在As-Sb互换问题，精确控制InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "层中的合金成分仍是InAs/InAsSb体系超晶格外延生长中的重要难点。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "美国Steenbergen研究分析，随着锑化物Ⅱ类InAs/InAsSb超晶格材料的InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "层中Sb成分的改变，超晶格的结构与性质都发生了改变" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "b43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。超晶格InAs/InAsSb应变平衡有效带隙与结构关系如" }, { "name": "xref", "data": { "text": "图 4(a)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(a)" } ] } }, { "name": "text", "data": "所示。在Sb成分范围为0.25~0.38之间时，InAs/InAsSb超晶格材料的发光范围可以覆盖中波红外波段和长波红外波段；当Sb组分固定时，增加超晶格各层厚度，有利于进一步降低材料带隙。" } ] }, { "name": "fig", "data": { "id": "Figure4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "InAs/InAsSb超晶格" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "b43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。(a)应变平衡有效带隙与结构关系；(b)响应波长为8，10，12 μm且不同应变平衡InAs/InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " Ⅱ型超晶格设计的电子-空穴波函数重叠的计算平方。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 4" } ], "title": [ { "name": "text", "data": "InAs/InAsSb superlattice" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "b43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (a)Relationship between effective band gap of strain balance and structure. (b)Response wavelength for 8, 10, 12 μm and different strain balance InAs/InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " superlattice Ⅱ type design of electronic-heavy Kong Bo function overlap calculation of square." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970985&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970985&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970985&type=middle" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图 4(b)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(b)" } ] } }, { "name": "text", "data": "给出了Sb组分变化时，电子空穴波函数重叠变化的情况，可以发现随着Sb量的增加，InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "层的厚度逐渐减小，波函数重叠亦在逐渐增加，如" }, { "name": "xref", "data": { "text": "表 1", "type": "table", "rid": "Table1", "data": [ { "name": "text", "data": "表 1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "Table1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "不同应变平衡的波函数叠加情况" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 1" } ], "title": [ { "name": "text", "data": "Summary of superposition of wave functions of different strain equilibria" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Material" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Sb composition/%" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Thickness of InAsSb/nm" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Response wave band/μm" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Wave functions overlap squared" } ] } ] ], "body": [ [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "A" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "0.339" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "3.74" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", 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"center", "data": [ { "name": "text", "data": "0.350" } ] }, { "align": "center", "data": [ { "name": "text", "data": "3.00" } ] }, { "align": "center", "data": [ { "name": "text", "data": "12" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.186" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "H" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.425" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1.81" } ] }, { "align": "center", "data": [ { "name": "text", "data": "12" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.233" } ] } ], [ { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "I" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "0.517" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "1.32" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "12" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "0.271" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在锑化物Ⅱ类超晶格材料InAs/InAsSb的生长过程中，为了减少失配产生的应力，我们选择在GaSb衬底上进行。在生长中，温度" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "b44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、生长速度、Ⅲ-Ⅴ分子束流比" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "b45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等因素对制备的超晶格质量都具有重要的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.3" } ], "title": [ { "name": "text", "data": "InGaAs/InAsSb体系分子束外延" } ], "level": "2", "id": "s2-3" } }, { "name": "p", "data": [ { "name": "text", "data": "锑化物Ⅱ类超晶格材料InGaAs/InAsSb早期的生长方式是利用金属有机化学气相沉积(MOCVD)手段进行生长" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "b46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "b49", "data": [ { "name": "text", "data": "49" } ] } } ], "rid": [ "b46", "b47", "b48", "b49" ], "text": "46-49", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但是利用这种方式生长的锑化物Ⅱ类超晶格材料InGaAs/InAsSb，由于存在纯度和精度方面的问题，所以在过去的几十年中并没有被重视。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了得到更高纯度且具有良好精度的超晶格结构，2016年研究人员尝试利用MBE技术制备锑化物Ⅱ类超晶格材料InGaAs/InAsSb，并展开了大量的研究工作" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "b50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该材料与InAs/InAsSb材料相比较，是将Ga原子合并到InAs层中，这种方式不仅仅为应变补偿提供了支持，还提高了超晶格的吸收特性。该超晶格的响应波段与Ga成分的关系如" }, { "name": "xref", "data": { "text": "表 2", "type": "table", "rid": "Table2", "data": [ { "name": "text", "data": "表 2" } ] } }, { "name": "text", "data": "所示，它与利用估算法、PL测定以及吸收系数测定得到的带隙相接近。实验中利用MBE技术在GaSb(100)衬底上进行生长，生长过程中通过优化温度、生长速度、Ⅲ-Ⅴ分子束流比等生长参数，来实现超晶格带隙的调控。在生长过程中，确定In的生长速率，Ga的生长速率随InGaAs层生长速率的变化而改变" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "b27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，As流量在生长InGaAs层中保持不变，而在生长InAsSb层时，为了促进层中的Sb掺入量，As的流量略有降低。制备的3个Ga组分不同的样品，吸收区厚度为500 nm，周期数从84变化到94，具体参量如" }, { "name": "xref", "data": { "text": "表 2", "type": "table", "rid": "Table2", "data": [ { "name": "text", "data": "表 2" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "Table2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "InGaAs/InAsSb超晶格结构参数与材料特性" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 2" } ], "title": [ { "name": "text", "data": "InGaAs/InAsSb superlattice structure parameters and material properties" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "5", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Superlattice parameter" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Absorption " }, { "name": "text", "data": "" }, { "name": "text", "data": "coefficient" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Working " }, { "name": "text", "data": "" }, { "name": "text", "data": "temperature/K" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Response wave " }, { "name": "text", "data": "" }, { "name": "text", "data": "band/μm" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Ref" } ] } ], [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Thickness of " }, { "name": "text", "data": "" }, { "name": "text", "data": "InGaAs/nm" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Thickness of " }, { "name": "text", "data": "" }, { "name": "text", "data": "InAsSb/nm" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Ga/%" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Sb/%" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Period" } ] } ] ], "body": [ [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "3.950" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "1.978" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "5" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "35" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "84" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "0.234" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "77" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "5.2" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "b27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "3.347" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.282" } ] }, { "align": "center", "data": [ { "name": "text", "data": "10" } ] }, { "align": "center", "data": [ { "name": "text", "data": "35" } ] }, { "align": "center", "data": [ { "name": "text", "data": "89" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.236" } ] }, { "align": "center", "data": [ { "name": "text", "data": "77" } ] }, { "align": "center", "data": [ { "name": "text", "data": "5.2" } ] }, { "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "b27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "2.586" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "2.738" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "20" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "35" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "94" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "0.240" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "77" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "5.0" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "b27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "对得到的4个样品进行X射线衍射测量，得到的XRD曲线如" }, { "name": "xref", "data": { "text": "图 5", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5" } ] } }, { "name": "text", "data": "所示，样品晶格失配度小于0.1%，这意味着生长出的较厚吸收区域未产生应变缺陷。但是由于FWHM随着周期数的增加而减少，所以随着Ga的混合再次影响晶体质量。最后，模拟得到4个超晶格样品条纹间距都在4%以内，这意味着模拟的吸收/发射值对每个样品都是有效的。" } ] }, { "name": "fig", "data": { "id": "Figure5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "InGaAs/InAsSb超晶格(004)方向X射线衍射光谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "b51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 5" } ], "title": [ { "name": "text", "data": "InGaAs/InAsSb superlattice X-ray diffraction spectra in the direction of (004)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "b51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970988&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970988&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970988&type=middle" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "锑化物Ⅱ类超晶格材料能带结构与发光特性" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "InAs/GaSb材料是由InAs材料和GaSb材料交替组合而制备的超晶格。InAs层与GaSb层在Ⅲ-Ⅴ族复合半导体材料中具有重要地位，这两种Ⅲ-Ⅴ族半导体的晶格常数均在0.610 nm范围，如" }, { "name": "xref", "data": { "text": "图 6(a)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(a)" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "Figure6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "Ⅲ-Ⅴ族超晶格体系与InAs/GaSb超晶格光谱特性。(a)Ⅲ-Ⅴ族能带隙晶格常数；(b)锑化物Ⅱ类超晶格的好处与挑战" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "b54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(c)层厚度改变时的PL光谱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "b51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(d)不同波长对InAs/GaSb超晶格吸收器穿透能力计算图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "b55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(e)InAs/GaSb超晶格PL特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "b55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(f)600，400，300周期超晶格连续波激励功率与少子寿命" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "b55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 6" } ], "title": [ { "name": "text", "data": "Ⅲ-Ⅴ superlattice system and InAs/GaSb superlattice spectral characteristics. (a)Ⅲ-Ⅴ band gap crystal lattice constant. (b)Antimonide Ⅱ class superlattice benefits and challenges" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "b54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (c)PL spectra when layer thickness changes" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "b51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (d)Calculation diagram of penetration capacity of InAs/GaSb superlattice absorbers of different wavelengths" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "b55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (e)Characteristics of InAs/GaSb superlattice PL" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "b55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (f)600, 400, 300 period superlattice continuous wave excitation power and few sub life" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "b55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970991&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970991&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970991&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "Ⅱ类超晶格InAs/GaSb制备的红外探测器，通过对InAs层与GaSb层厚度的改变，可以有效调控超晶格材料有效禁带宽度，从而实现波长从3 μm到32 μm波段光的探测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "b51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。对于Ⅱ类超晶格材料InAs/GaSb，目前在理论方面和实验方面均取得了较大的研究进展，如生长方式、物性研究、影响性质的因素及应用等。但是，Ⅱ类超晶格InAs/GaSb材料制备的红外探测器的少数载流子寿命特别小，普遍的少子寿命在20~80 ns。由于其载流子寿命很小，在其探测器上的暗电流较大，所以该探测器工作环境温度要求较低，通常为77 K，较高的少数载流子寿命也仅有80 ns" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "b52", "data": [ { "name": "text", "data": "52" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了使红外探测器在较高的温度下也有很高的少数载流子寿命，使红外探测器可以在接近于常温的条件下使用，科研人员研究了另一个Ⅱ类超晶格材料InAs/InAsSb，它的少数载流子寿命是InAs/GaSb超晶格少数载流子寿命的几十倍甚至百倍。同时，InAs/InAsSb材料也具有带隙工程的灵活性，可利用对不同层面的厚度与周期数来控制红外探测器的响应波长与吸收特性。InAs/InAsSb也可以通过控制Sb原子的量来控制材料的吸收特性，将Sb原子的比例控制在合适的量时(＜50%)，可以使InAs/InAsSb超晶格拥有较大的少数载流子寿命。当少子寿命较高时，利用InAs/InAsSb超晶格制备的红外探测器暗电流密度较低。在这种结构的探测器中，暗电流的大小可以得到控制" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "b53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其工作环境温度得到进一步提高，目前Sb原子最佳比例还需要深入研究。近几年备受关注的中红外锑化物Ⅱ类超晶格除了InAs/GaSb和InAs/InAsSb外，还有InGaAs/InAsSb材料。由于锑化物Ⅱ类超晶格材料InGaAs/InAsSb的提出，很好地解决了探测器吸收系数较低的问题；同时由于较小的空穴约束导致较低的空穴有效质量，与InAs/InAsSb相比具有增加垂直少数载流子空穴迁移率的潜力。锑化物Ⅱ类超晶格材料InAs/GaSb、InAs/InAsSb和InGaAs/InAsSb都会带来不同的优势与挑战，如" }, { "name": "xref", "data": { "text": "图 6(b)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(b)" } ] } }, { "name": "text", "data": "所示" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "b54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。下面对这3种材料物性研究进行综述。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "InAs/GaSb物性" } ], "level": "2", "id": "s3-1" } }, { "name": "p", "data": [ { "name": "text", "data": "Ⅱ类超晶格InAs/GaSb探测器工作波长范围为3~32 μm，其工作波长范围的调整可以通过两种材料的厚度与周期数进行不同程度的优化来实现。通过调整InAs层厚度可以对响应波长范围进行大范围的归正；通过调整GaSb层厚度对响应波长范围进行精度矫正，并且随着GaSb层厚度变大，其响应变化不是很快，PL峰会产生蓝移的现象，即强度也随着变强" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "b44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；而随着Ⅱ类超晶格InAs/GaSb周期数的增加，其吸收特性也会随着增强，但是达到一定周期数后，其吸收特性逐渐趋于常数。Ⅱ类超晶格InAs/GaSb在探测器上应用后可以使其隧穿电流降低，俄歇复合的速率也减小" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "b56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但其吸收速率与前两代探测器材料相似，所以并不影响Ⅱ类超晶格InAs/GaSb探测器的应用。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图 6(c)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(c)" } ] } }, { "name": "text", "data": "的光致发光光谱是对InAs层厚度不变、而GaSb层厚度发生改变时，Ⅱ类超晶格InAs/GaSb的光学性能发生变化的结果进行表征。该组测试的材料InAs层固定为8层，而GaSb层依次为8层、12层、16层、24层、32层和40层，总共为6种材料的对比。在图中可以看到，随着GaSb层厚度的增加，光波长发生了蓝移的现象，并且PL强度也大大提高，同时其FWHM也随着变小。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "作为已被关注的第三代红外探测器首选材料，Ⅱ类超晶格InAs/GaSb的电子有效质量大，隧穿电流小，空穴带之间的带隙较大，俄歇复合也在一定程度上被抑制，具有一定的载流子寿命，有利于探测器获得更高的工作温度。对于一个红外探测器的性能，其暗电流的大小是至关重要的。所以在研究上，如何降低暗电流的大小和提高信噪比是提高红外探测器性能的关键一步。暗电流的大小与复合电流、扩散电流、隧穿电流及表面电流有关，可以表示为：" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "3" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970993&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970993&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970993&type=middle" } } } ], "id": "fgxb-42-2-165-E3" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SRH" } ] }, { "name": "text", "data": "是复合电流，与载流子的产生复合过程有关；" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "diff" } ] }, { "name": "text", "data": "是扩散电流，与俄歇和辐射有关；" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "tun" } ] }, { "name": "text", "data": "是隧穿电流，与载流子的有效质量和势垒高度有关；" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "surf" } ] }, { "name": "text", "data": "是表面电流，与器件的表面态有关。从上面可以看出这些不同的电流是在不同结构区域产生的，如果想要有效地控制暗电流的大小，需要从结构设计出发" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "b57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "第三代红外探测器材料是因为它具有带隙工程的灵活性和涉及红外光波段的广泛性。但是在红外探测器的研究中，暗电流的大小是不可忽视的，其中暗电流的大小和少数载流子的寿命也有一定的联系。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "首先说少数载流子的寿命：如果过量的载流子浓度比多数载流子浓度小，PL就会衰减，衰减的时间常数等于少数载流子的寿命，少数载流子的寿命我们可以用光致发光(PL)来测定。若已知载流子复合系数为" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "text", "data": "，载流子静态速率为" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "，振幅为" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "，且" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "≪" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "，则过剩载流子浓度Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "可表示为：" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "4" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970995&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970995&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970995&type=middle" } } } ], "id": "fgxb-42-2-165-E4" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "即" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "5" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970997&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970997&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970997&type=middle" } } } ], "id": "fgxb-42-2-165-E5" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "频率" }, { "name": "italic", "data": [ { "name": "text", "data": "ω" } ] }, { "name": "text", "data": "处的PL响应与过量载流子浓度的振荡部分线性相关。并且在广泛频率范围内PL的响应测试可以确定载流子复合系数" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "text", "data": "：" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "6" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970998&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970998&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970998&type=middle" } } } ], "id": "fgxb-42-2-165-E6" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "在载流子静态速率" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "接近于0的情况下，测试PL衰变常数与激发载流子复合系数" }, { "name": "italic", "data": [ { "name": "text", "data": "τ(G" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": ")对确定少数载流子寿命" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "是有一定帮助的。在p型材料上，假设空穴浓度为" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "，在过剩载流子浓度远小于空穴浓度" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "的低激励条件下，少数载流子寿命" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为：" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "7" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970999&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970999&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6970999&type=middle" } } } ], "id": "fgxb-42-2-165-E7" } } ] }, { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "是SRH系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "为辐射复合系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "ϕ" } ] }, { "name": "text", "data": "为光子循环因子。在载流子浓度很低的时候，俄歇复合可以忽略不计。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2013年，美国Hoglund在GaSb衬底上，通过MBE技术生长了周期数为300，400，600的超晶格材料，并利用光学调制响应(OMR)对其少数载流子特性进行了研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "b55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。研究中，为防止界面损失，将InAs/GaSb超晶格样品夹在两个AlSb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.92" } ] }, { "name": "text", "data": "-As" }, { "name": "sub", "data": [ { "name": "text", "data": "0.08" } ] }, { "name": "text", "data": "之间。在77 K温度下利用PL吸收谱和结构PL谱对其进行表征，不同的激励光源对材料的穿透效果不同，实验中利用氦氖激光器(643 nm)、钕钇铝石榴石激光器(1 064 nm)和电信(1 300~1 550 nm)激光进行激励，材料的吸收计算如" }, { "name": "xref", "data": { "text": "图 6(d)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(d)" } ] } }, { "name": "text", "data": "所示。对比中发现，在不同波长激励下，吸收器中载流子初始分布有很大不同，从图中可以看出643 nm激光在500 nm范围内几乎被吸收，而1 550 nm激光可以穿透将近3 500 nm厚度的材料。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "PL结构特性如" }, { "name": "xref", "data": { "text": "图 6(e)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(e)" } ] } }, { "name": "text", "data": "所示，结果由HgCdTe探测器检测。随后利用时间分辨光致发光光谱方法进行了载波寿命测量，结果如" }, { "name": "xref", "data": { "text": "图 6(f)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(f)" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图 6(f)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(f)" } ] } }, { "name": "text", "data": "的插图显示了PL峰值强度与激发脉冲能量和过剩载流子浓度之间的关系。在探测的光激发范围内，PL强度与过剩载流子浓度的平方成正比，即" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "8" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971000&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971000&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971000&type=middle" } } } ], "id": "fgxb-42-2-165-E8" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "再利用1/" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "text", "data": "对零激励功率的依赖关系，推导得到少数载流子寿命" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "分别为38，36，33 ns，如" }, { "name": "xref", "data": { "text": "图 6(f)", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6(f)" } ] } }, { "name": "text", "data": "所示。从最低激励水平开始，功率低频响应快速单调增加，这种依赖关系的次线性特征可表示为：" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "9" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971001&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971001&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971001&type=middle" } } } ], "id": "fgxb-42-2-165-E9" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文对近几年InAs/GaSb超晶格不同结构材料所具有的少数载流子寿命特性进行了统计，结果如" }, { "name": "xref", "data": { "text": "表 3", "type": "table", "rid": "Table3", "data": [ { "name": "text", "data": "表 3" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "Table3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表3" } ], "title": [ { "name": "text", "data": "InAs/GaSb超晶格结构参数与材料特性" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 3" } ], "title": [ { "name": "text", "data": "InAs/GaSb superlattice structure parameters and material characteristics" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "4", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Superlattice parameter" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Jane life(" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "text", "data": ")/ " }, { "name": "text", "data": "" }, { "name": "text", "data": "ns" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Working " }, { "name": "text", "data": "" }, { "name": "text", "data": "temperature/K" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Response wave " }, { "name": "text", "data": "" }, { "name": "text", "data": "band/μm" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Ref" } ] } ], [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Thickness of " }, { "name": "text", "data": "" }, { "name": "text", "data": "InAs/nm" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Thickness of " }, { "name": "text", "data": "" }, { "name": "text", "data": "GaSb/nm" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Interface" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Period" } ] } ] ], "body": [ [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "2.10" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "2.40" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "200" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "80" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "77" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "3.8" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "b52", "data": [ { "name": "text", "data": "52" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "4.20" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.20" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "600" } ] }, { "align": "center", "data": [ { "name": "text", "data": "38" } ] }, { "align": "center", "data": [ { "name": "text", "data": "77" } ] }, { "align": "center", "data": [ { "name": "text", "data": "7.5" } ] }, { "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "b54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "5.10" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.10" } ] }, { "align": "center", "data": [ { "name": "text", "data": "InSb" } ] }, { "align": "center", "data": [ { "name": "text", "data": "400" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.4" } ] }, { "align": "center", "data": [ { "name": "text", "data": "80" } ] }, { "align": "center", "data": [ { "name": "text", "data": "18.8" } ] }, { "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "b58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "4.50" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.40" } ] }, { "align": "center", "data": [ { "name": "text", "data": "InSb" } ] }, { "align": "center", "data": [ { "name": "text", "data": "300" } ] }, { "align": "center", "data": [ { "name": "text", "data": "157" } ] }, { "align": "center", "data": [ { "name": "text", "data": "58" } ] }, { "align": "center", "data": [ { "name": "text", "data": "10" } ] }, { "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "b59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "2.10" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1.20" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "150" } ] }, { "align": "center", "data": [ { "name": "text", "data": "100" } ] }, { "align": "center", "data": [ { "name": "text", "data": "77" } ] }, { "align": "center", "data": [ { "name": "text", "data": "5.0" } ] }, { "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "b60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "2.70" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.55" } ] }, { "align": "center", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "data": [ { "name": "text", "data": "190" } ] }, { "align": "center", "data": [ { "name": "text", "data": "15~70" } ] }, { "align": "center", "data": [ { "name": "text", "data": "87" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.2" } ] }, { "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "b61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "3.00" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "3.00" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "300" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "—" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "120" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "4.9" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "b62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "]" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在对锑化物Ⅱ类超晶格InAs/GaSb少数载流子寿命性质研究中发现，其结构周期数范围一般在150~600范围内，工作温度在77~120 K之间，响应波段为中长红外波段，少数载流子寿命最高也仅达到150 ns。因为Ⅱ类超晶格InAs/GaSb仅有甚至不到100多纳秒的少数载流子寿命，该性质使其在红外探测器中的应用受到极大的限制。目前，Ⅱ类超晶格InAs/GaSb制作的红外探测器需要在较低温度下工作" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "b63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "b67", "data": [ { "name": "text", "data": "67" } ] } } ], "rid": [ "b63", "b64", "b65", "b66", "b67" ], "text": "63-67", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为提高少数载流子寿命，使得红外探测器可以在接近于常温的状态下工作，仍是现今研究中的一个重大挑战。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "随着Ⅱ类超晶格InAs/InAsSb具有极高的少数载流子寿命的特性被发现(其值是Ⅱ类超晶格InAs/GaSb的几十倍甚至上百倍)，近几年InAs/InAsSb的研究工作也日益增多。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "InAs/InAsSb体系光学特性" } ], "level": "2", "id": "s3-2" } }, { "name": "p", "data": [ { "name": "text", "data": "InAs/GaSb超晶格的少子寿命受GaSb层中Ga的影响而被抑制。而InAs/InAsSb超晶格是无Ga体系的超晶格材料，它的非辐射中心减小，所以少子寿命大大地延长，其中在中红外波段的少子寿命达到了9 μs，在长红外波段也达到了420 ns" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "b68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "b69", "data": [ { "name": "text", "data": "69" } ] } } ], "rid": [ "b68", "b69" ], "text": "68-69", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。采用全原子经验赝势法模拟InAs/InAsSbⅡ类超晶格，可知电子、空穴的理分离效应是其载流子寿命较长的重要原因" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "b70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。将InAs/InAsSb与InAs/GaSb两种超晶格相互对比，InAs/InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的光学性质和电学性质除了与材料厚度、排列周期数有关，还与InAsSb层中的Sb含量有关。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2014年, Aytac等利用MBE技术生长了5个样品" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "b71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，它们具有不同的层结构。样品由GaSb缓冲层、100 nm的AlAsSb阻挡层、4 μm的Ⅱ类超晶格(T2SL)吸收层、100 nm的AlAsSb阻挡层和150 nm的InAsSb帽层构成。吸收层结构如" }, { "name": "xref", "data": { "text": "表 4", "type": "table", "rid": "Table4", "data": [ { "name": "text", "data": "表 4" } ] } }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "b71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "Table4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表4" } ], "title": [ { "name": "text", "data": "InAs/InAsSb超晶格结构参数与材料特性" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 4" } ], "title": [ { "name": "text", "data": "InAs/InAsSb superlattice structure parameters and material properties" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "4", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Superlattice parameter" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Jane life/μs" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Working " }, { "name": "text", "data": "" }, { "name": "text", "data": "temperature/K" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Response wave " }, { "name": "text", "data": "" }, { "name": "text", "data": "band/μm" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Ref" } ] } ], [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Thickness of" }, { "name": "text", "data": "" }, { "name": "text", "data": " InAs/nm" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Thickness of " }, { "name": "text", "data": "" }, { "name": "text", "data": "InAsSb/nm" } ] }, { "align": "center", "style": 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}, { "align": "center", "data": [ { "name": "text", "data": "5.00" } ] }, { "align": "center", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "b72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "]" } ] } ], [ { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "4.20" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "1.10" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "35.0" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "736" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "3.8" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "80" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "4.80" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "73", "type": "bibr", "rid": "b73", "data": [ { "name": "text", "data": "73" } ] } }, { "name": "text", "data": "]" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由于T2SL能带结构的高度非抛物性和窄带隙半导体中较高的热载流子密度(俄歇复合速率随载流子密度迅速增长)，俄歇复合速率对T2SL结构非常敏感，更具体地说，是对层厚和合金成分非常敏感。所以，可以有意地抑制俄歇复合。例如，在T2SL中，控制子带间跃迁的能力，可以通过限制电子和空穴可能的最终高能量状态来降低俄歇复合速率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "利用过剩载流子浓度对少子寿命进行测试，其中过剩载流子浓度函数为" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "10" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971002&type=", 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"data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "是本征半导体的辐射系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "text", "data": "是对应的俄歇系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "text", "data": "是过剩载流子浓度。过剩载流子浓度的测试结果如" }, { "name": "xref", "data": { "text": "图 7(a)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(a)" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "Figure7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "InAs/InAsSb超晶格的光谱特性与载流子寿命。(a)过剩载流子对数图与线性图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "b71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(b)4 K时样品PL光谱测试" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "b74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(c)Sb的含量与PL峰能量关系图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "b74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(d)77 K载流子寿命的倒数与过剩载流子浓度PL测试" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "b76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(e)温度变化对各类复合的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "b76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(f)少数载流子寿命和计算的辐射寿命与载流子浓度关系" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "b77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(g)77 K时InAs/GaSb探测器与InAs/InAsSb探测器的量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "b79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；(h)80 K时InAs/GaSb与InAs/InAsSb超晶格材料的吸收系数" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "b80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 7" } ], "title": [ { "name": "text", "data": "Spectral characteristics of InAs/InAsSb superlattices and carrier lifetime. (a)Logarithmic and linear diagrams of excess carriers" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "b71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (b)PL spectral test of samples at 4 K" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "b74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (c)Correlation diagram between the content of Sb and the peak energy of PL" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "b74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (d)Measurement of the inverse carrier life and excess carrier concentration PL in 77 K" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "b76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (e)Effects of temperature changes on various compounds" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "b76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (f)Relationship between minority carrier life and calculated radiation life and carrier concentration" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "b77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (g)Quantum efficiency of InAs/GaSb detectors and InAs/InAsSb detectors at 77 K" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "b79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (h)Absorption coefficient of InAs/GaSb and InAs/InAsSb superlattice materials at 80 K" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "b80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971004&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971004&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971004&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "对5个样品的少数载流子寿命进行计算与测试，结果如" }, { "name": "xref", "data": { "text": "表 4", "type": "table", "rid": "Table4", "data": [ { "name": "text", "data": "表 4" } ] } }, { "name": "text", "data": "中Ref.[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "b71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]所示。从结果中可以发现随着锑含量的增加和层厚的减小，少数载流子寿命和俄歇寿命普遍增大。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对制作的样品在4 K时进行PL光谱测试，结果如" }, { "name": "xref", "data": { "text": "图 7(b)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(b)" } ] } }, { "name": "text", "data": "所示" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "b74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在测试结果的峰值处标注了Sb含量的摩尔分数。可以看出含26.7% Sb含量的样品发射能量很低，所对应的波长为10 μm。随着Sb含量的降低，PL的强度在增加。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "Sb的含量与PL峰的能量关系对应如" }, { "name": "xref", "data": { "text": "图 7(c)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(c)" } ] } }, { "name": "text", "data": "所示。长发射波长是由于Ⅱa(合金)型能带排列的电子被限制在InAsSb中而得到，当载流子的势垒增加时，InAsSb中的电子重叠、InAs中的空穴减少，因此PL信号减弱。在这项工作中，由于应变弛豫，这些层内有明显的高度缺陷，因而它们不适合用于光电探测器。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "总的来说，与InAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "的带隙相比，这些样品均显示出显著的红移。测量得到的跃迁能与计算出的InAsSb的应变带隙不符，但是在" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Sb" } ] }, { "name": "text", "data": "=0.37时Sb含量外推到0 eV成线性关系。所以PL结果强烈支持InAs/InAsSb应变平衡光学检测超出5 μm发光结构的概念，可以将其利用在红外光电检测方面。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "尽管Ⅱ类超晶格InAs/GaSb具有大面积均匀性好、俄歇复合率低、隧穿电流小、响应波段范围宽的优点，但是由于GaSb组分层中Ga的相关缺陷，使Ⅱ类超晶格InAs/GaSb的少数载流子寿命非常小，所以近几年提出了无Ga元素的Ⅱ类超晶格InAs/InAsSb" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "b68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "b69", "data": [ { "name": "text", "data": "69" } ] } } ], "rid": [ "b68", "b69" ], "text": "68-69", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。它的少数载流子寿命达到了几微秒，远远高于InAs/GaSb超晶格的少子寿命，这样利用InAs/InAsSb制作的红外探测器不仅具有InAs/GaSb红外探测器的优点，而且可以利用高少子寿命来提高探测器的工作温度，这也是近几年研究工作中的热门问题。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "少数载流子寿命作为影响红外探测器中暗电流和量子效率的关键参数，是目前研究的重要问题。在用于中红外波段的探测器材料中，HgCdTe的寿命最高9 μs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "b75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。近年研究发现了Ⅱ类超晶格InAs/InAsSb，由于它无Ga元素，因此无Ga相关的缺陷，使其少数载流子寿命大大提高，现在已经对其少数载流子寿命的影响因素展开了大量的研究工作。首先是器件工作时产生的复合作用对少数载流子寿命的影响及关系" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "b76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在已知复合作用对少子寿命有影响后，再进一步关注载流子浓度对少子寿命的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "b77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。根据目前红外探测器的需求，还要特别注意温度对少数载流子寿命的影响，使利用Ⅱ类超晶格InAs/InAsSb制作出来的红外探测器，不仅可以在红外探测领域上有广泛的波长应用范围，还可以在接近于常温的状态下正常工作" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "b44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，为基于该材料的红外探测器高工作温度提供了良好的应用前景。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "寿命受到多种复合机制的影响，其中包括俄歇复合过程、肖克利霍尔(SRH)复合与辐射复合，受这些复合的影响，可得到复合寿命为" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "12" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971005&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971005&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971005&type=middle" } } } ], "id": "fgxb-42-2-165-E12" } } ] }, { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SRH" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Aurger" } ] }, { "name": "text", "data": "分别对应着肖克利霍尔寿命、辐射寿命和俄歇寿命" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "b76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些寿命分别取决于本底载流子浓度" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "和过剩载流子浓度" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": " (即公式(4)中的Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": ")。当载流子浓度低时," } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "13" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971006&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971006&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971006&type=middle" } } } ], "id": "fgxb-42-2-165-E13" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "并用PL对载流子寿命进行测试，得到" }, { "name": "xref", "data": { "text": "图 7(d)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(d)" } ] } }, { "name": "text", "data": "。在过剩载流子浓度下，俄歇复合对寿命没有显著的影响。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在温度变化的条件下，比较这些复合寿命的变化情况，如" }, { "name": "xref", "data": { "text": "图 7(e)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(e)" } ] } }, { "name": "text", "data": "所示。它们分别对应少数载流子寿命与计算的俄歇、SRH和辐射寿命的温度依赖关系，电子、空穴和本征载流子浓度对温度的依赖关系，带隙和费米能级位置相对于传导带边缘的温度依赖关系。在低温下，由于空穴质量比电子质量低得多，所以温度对辐射寿命没有影响。而随着温度的升高，空穴浓度也在提高，空穴起到的作用也越来越大，从而影响了寿命。当温度低于200 K时，计算出的辐射寿命与温度近似成比例增加，主要受辐射系数" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "(公式(13))的温度依赖性影响。在220 K时，由于载体浓度电子和空穴量的增加，辐射寿命达到最大值，然后开始下降。结果表明，在77~200 K之间，辐射复合起主导作用；而温度达到200 K以上时，俄歇复合起主导作用；同时发现SRH寿命远远大于少数载流子寿命，所以可以利用降低本底掺杂浓度的方式来进一步提高少数载流子寿命。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "利用电容来计算载流子浓度，分析载流子浓度与少数载流子寿命的关系，平均掺杂浓度" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "公式为:" } ] }, { "name": "p", "data": [ { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "14" } ], "data": [ { "name": "text", "data": " " }, { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971007&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971007&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971007&type=middle" } } } ], "id": "fgxb-42-2-165-E14" } } ] }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "分别对应于基本电荷、玻尔兹曼常数、温度和本征载流子浓度，" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ox" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "inv" } ] }, { "name": "text", "data": "是给定电容的最大值和最小值，" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "是半导体介电常数、真空介电常数和电容面积。" }, { "name": "xref", "data": { "text": "图 7(f)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(f)" } ] } }, { "name": "text", "data": "是测量的少数载流子寿命和计算的少数载流子寿命与载流子浓度的关系。可以看出少数载流子寿命随载流子浓度的增大而减小，这与载流子浓度增大而辐射寿命减小有关。载流子浓度与少数载流子寿命之间的这种相关性可以一定程度解释这些超晶格寿命得到提升的原因。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文对近十年来关于InAs/InAsSb超晶格结构材料少数载流子寿命方面的研究工作进行统计，得到了" }, { "name": "xref", "data": { "text": "表 4", "type": "table", "rid": "Table4", "data": [ { "name": "text", "data": "表 4" } ] } }, { "name": "text", "data": "的数据。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "从对比结果中发现，InAs/InAsSb超晶格材料的少数载流子寿命很大程度上得到了提升。表中的材料是在16~80 K温度范围内测量的，响应波段为中红外波段，最终测得的少子寿命是InAs/GaSb超晶格的十几倍，这样可以使超晶格在温度较高环境下，具有高少子寿命的特点。中红外超晶格InAs/InAsSb的载流子寿命受温度影响，随温度的升高而降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "b71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该优点使InAs/InAsSb超晶格可以在探测性能上展开应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "b78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "虽然锑化物Ⅱ类超晶格材料InAs/InAsSb的少数载流子寿命很大程度提高了，但是其吸收率和空穴迁移率却受到了极大限制。2014年，Klipstein利用建模对InAs/GaSb和InAs/InAsSb超晶格探测器进行了计算，对比发现InAs/InAsSb探测器的量子效率明显小于InAs/GaSb探测器，如" }, { "name": "xref", "data": { "text": "图 7(g)", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7(g)" } ] } }, { "name": "text", "data": "所示，这是因为InAs/InAsSb材料的吸收系数较弱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "b79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2016年，美国Vurgaftman对长红外的锑化物Ⅱ类超晶格的吸收谱进行计算" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "b80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，在80 K条件下进行带间吸收测试，发现InAs/InAsSb超晶格吸收系数明显偏低。这是InAs/InAsSb超晶格研究工作的一个最大问题。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "InGaAs/InAsSb体系光学特性" } ], "level": "2", "id": "s3-3" } }, { "name": "p", "data": [ { "name": "text", "data": "因1970年提出的InAs/GaSb超晶格具有少子寿命低的特点而得到广泛研究的InAs/InAsSb超晶格具有吸收率和空穴迁移率都很低的问题，这使得光电探测器的应用发展受到一定程度的阻碍。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2010年，波兰华沙的Rogalski提出" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将Ga原子合并到InAs层中，得到InGaAs/InAsSb超晶格，从而提高红外吸收性能，该材料适用于热红外探测器的研究。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "实验中利用PL光谱对Ga原子合并到InAs层后得到的InGaAs/InAsSb材料进行光学性质研究，得到了" }, { "name": "xref", "data": { "text": "图 8(a)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8(a)" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "(b)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "(b)" } ] } }, { "name": "text", "data": "的结果。从" }, { "name": "xref", "data": { "text": "图 8(a)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8(a)" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "(b)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "(b)" } ] } }, { "name": "text", "data": "中可以看出，在不同的温度下，未加入Ga的样品都具有最高的光致发光强度；但随着Ga浓度的增加，光致发光强度逐渐下降。同时随着温度的改变，PL峰位置也会发生一定程度的变化。如" }, { "name": "xref", "data": { "text": "图 8(c)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8(c)" } ] } }, { "name": "text", "data": "所示，当Ga原子含量为5%、10%时，PL峰基本不变，而在Ga原子浓度20%时，PL峰位发生了7 meV轻微蓝移，这一结果恰好证实了样品设计材料带隙的有效性。" } ] }, { "name": "fig", "data": { "id": "Figure8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "InGaAs/InAsSb超晶格红外吸收性能探究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。(a)~(b)80 K与150 K时InGaAs/InAsSb超晶格光致发光光谱；(c)带隙峰位与温度关系；(d)80 K与150 K时理论与FTIR透射测试光谱图；(e)暗电流电压特性；(f)电压在-0.5 V时暗电流密度与温度关系；(g)暗电流密度与“Rule 07”对比；(h)量子效率与偏置电压和温度的关系；(i)-0.5 V和+0.5 V时，量子效率与温度的依赖关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 8" } ], "title": [ { "name": "text", "data": "Infrared absorption performance of InGaAs/InAsSb superlattice" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (a)-(b)InGaAs/InAsSb superlattice photoluminescence spectra at 80 K and 150 K. (c)Relationship between band gap peak position and temperature. (d)Theoretical and FTIR transmission test spectrogram at 80 K and 150 K. (e)Dark current and voltage characteristic. (f)Relationship between the dark current density and temperature at -0.5 V voltage. (g)Comparison of dark current density with \"Rule 07\". (h)Relationship between quantum efficiency and bias voltage and temperature. (i)Dependence of quantum efficiency on temperature at -0.5 V and +0.5 V." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971008&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971008&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971008&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "利用红外光谱仪对材料的吸收特性进行研究，得到了InGaAs/InAsSb超晶格的吸收系数。如" }, { "name": "xref", "data": { "text": "图 8(d)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8(d)" } ] } }, { "name": "text", "data": "所示，在80 K和150 K时，样品的带隙与设计几乎一致。虽然在不同的栅格匹配设计中实现相同的带隙很明显，但最重要的是观察到InGaAs层中Ga组成增加时吸收系数变化的趋势。这一趋势与理论预测中观察到的趋势非常相似。从结果中可以发现不含Ga的样品吸收系数最低，且随着Ga组成的增加，样品的吸收系数也在提高，在3~5 μm波段增加到了30%~35%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在进行InGaAs/InAsSb光学性质的研究之后，又对其电学性质展开了详尽的分析" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "b50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。实验中对材料的暗电流电压展开了讨论，测试结果如" }, { "name": "xref", "data": { "text": "图 8(e)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8(e)" } ] } }, { "name": "text", "data": "~" }, { "name": "xref", "data": { "text": "(g)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "(g)" } ] } }, { "name": "text", "data": "所示。可以看出，除了Ga含量为10%的样品以外，其余3种带隙偏差都较小，该结果意味着Ga元素的引入不会对被测探测器的暗电流产生负面影响，而且不会为超晶格引入缺陷。将该材料的暗电流与HgCdTe的“Rule 07”比较" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "b81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图 8(g)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8(g)" } ] } }, { "name": "text", "data": "所示，吸收边缘被用作截止波长，而不是量子效率下降到50%的波长。我们认为这是适当的，因为这些薄吸收超晶格探测器的吸收边缘不像“Rule 07”所创建的HgCdTe探测器那样陡峭。截止波长的模糊性带来了一些误差；然而，据估计，当温度超过120 K时，所有三元SLS探测器的暗电流都落在“Rule 07”的10倍以内。此外，观察到暗电流在高温下接近“Rule 07”。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "下面对响应波长3.4 μm时的量子效率随偏置电压和温度变化关系进行研究，如" }, { "name": "xref", "data": { "text": "图 8(h)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8(h)" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "(i)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "(i)" } ] } }, { "name": "text", "data": "所示，反向偏压下量子效率随着偏置电压的增大而增大，起效明显。此外，所有探测器的结构在吸收层与势垒层界面上都表现出价带偏移现象。在" }, { "name": "xref", "data": { "text": "图 8(i)", "type": "fig", "rid": "Figure8", "data": [ { "name": "text", "data": "图 8(i)" } ] } }, { "name": "text", "data": "中，由量子效率随温度变化的关系曲线可以看出，正向偏压与反向偏压对器件的量子效率影响极大。正向偏压下，器件的光响应极弱，没有表现出对温度的依赖性，这说明光生载流子在这个温度范围内被完全收集。而在反向偏压下，量子效率随温度的升高而增大。在反向偏压下，探测器整体的量子效率随温度的升高而增大。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "体系Ⅱ类超晶格" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "2019年，我们提出了利用In" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "四元合金替代GaSb形成新的锑化物Ⅱ类超晶格的设想，即InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "的Ⅱ类超晶格，期望通过合金化方式相对降低本征Ga缺陷同时达到调控波函数的空间分布的目的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "b82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "b84", "data": [ { "name": "text", "data": "84" } ] } } ], "rid": [ "b82", "b83", "b84" ], "text": "82-84", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，这种超晶格对In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "四元合金的组分范围提出了要求，但由于不互溶隙问题的存在，导致任意组分的四元合金层难以获得。为解决这一问题，我们进一步提出一种单分子层分布外延的手段" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "b28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，它是将一个四元合金层的外延生长划分成两个三元合金，即1个单分子层(ML)的In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "，可以由" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "text", "data": "个MLs的In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As和" }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "text", "data": "个MLs的In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sb组成。例如，生长1 ML的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "As" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "四元合金，我们可以生长0.5 MLs的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "As和0.5 MLs的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "Sb。因此，这种方式可以实现任意组分的四元合金生长，能够解决不互溶隙对合金组分的限制问题。在这种外延技术基础上我们成功得到了具有高晶体质量的InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "的Ⅱ类超晶格材料，如" }, { "name": "xref", "data": { "text": "图 9", "type": "fig", "rid": "Figure9", "data": [ { "name": "text", "data": "图 9" } ] } }, { "name": "text", "data": "所示。从HRXRD数据可以看出，第0个峰与衬底的衬底峰几乎重合，卫星峰级数高且半峰宽较窄(第一级卫星峰仅为31 arcsec)，说明该超晶格样品具有很好的晶体质量" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "85", "type": "bibr", "rid": "b85", "data": [ { "name": "text", "data": "85" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由PL光谱测试结果中可见两个超晶格的发光中心都接近于7.7 μm，但是InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "的发射强度接近InAs/GaSb的7倍。" }, { "name": "italic", "data": [ { "name": "text", "data": "K·P" } ] }, { "name": "text", "data": "计算结果说明，其主要原因在于得益于材料与结构的优势，InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "与InAs/GaSb相比，具有更高的电子和空穴波函数重叠积分，因此具有更高的发光效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "b86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "Figure9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "InAs(Sb)/InGaAsSb超晶格" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "b28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。(a)FMA部分生长过程；(b)高分辨率衍射图像；(c)界面表征HR-TEM图像；(d)77 K低温光致发光光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 9" } ], "title": [ { "name": "text", "data": "InAs(Sb)/InGaAsSb superlattices" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "b28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (a)Partial growth process of FMA. (b)High-resolution diffraction image. (c)Interface representation of HR-TEM images. (d)Low temperature photoluminescence spectra at 77 K." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971009&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971009&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971009&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在传统的InAs/GaSb、InAs/InAsSb和InGaAs/InAsSb等超晶格体系中，我们可以通过两个维度(超晶格各层厚度及组分)调控超晶格的能带结构。但在InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "超晶格体系中，还可以通过调整In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "层内的合金配比实现超晶格能带的调制。当InAs(Sb)层厚度减小时，超晶格发光波长会发生红移。而当InAs(Sb)层厚度不变时，通过改变In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "层参数也可使其发生红移，如" }, { "name": "xref", "data": { "text": "图 10", "type": "fig", "rid": "Figure10", "data": [ { "name": "text", "data": "图 10" } ] } }, { "name": "text", "data": "所示，因此InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "的Ⅱ类超晶格在能带调控的空间上更具操作性。对应的四元合金超晶格结构参数与光学特性见" }, { "name": "xref", "data": { "text": "表 5", "type": "table", "rid": "Table5", "data": [ { "name": "text", "data": "表 5" } ] } }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "Figure10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "光致发光归一化处理光谱图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "b28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 10" } ], "title": [ { "name": "text", "data": "Normalized photoluminescence spectra" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "b28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971010&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971010&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6971010&type=middle" } ] } }, { "name": "table", "data": { "id": "Table5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表5" } ], "title": [ { "name": "text", "data": "InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "超晶格结构参数与光学特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "b28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 5" } ], "title": [ { "name": "text", "data": "Structural parameters and optical properties of InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "b28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] } ] } ], "note": [], "table": [ { "head": [ [ { "rowspan": "3", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Sample" } ] }, { "colspan": "6", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "One period" } ] }, { "rowspan": "3", "style": "class:table_top_border", "data": [] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Total periods(100)" } ] } ], [ { "colspan": "2", "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "InAs(Sb) layer" } ] }, { "rowspan": "2", "style": "class:table_top_border2", "data": [] }, { "colspan": "3", "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": " layer" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Emission position/μm" } ] } ], [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Sb concentration" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Thickness/ML" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "y" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Thickness/ML" } ] } ] ], "body": [ [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "1" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "0.09" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "13" } ] }, { "rowspan": 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] } ] ], "foot": [] } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "5" } ], "title": [ { "name": "text", "data": "总结与展望" } ], "level": "1", "id": "s5" } }, { "name": "p", "data": [ { "name": "text", "data": "目前，Ⅲ-Ⅴ半导体Ⅱ类超晶格材料因其均匀性好、暗电流低和易实现能带剪裁等特点成为制备红外波段光电子器件的核心材料。材料的发光特性、吸收特性及电学特性将直接影响光电子器件性能。然而，现阶段InAs/GaSb、InAs/InAsSb和InGaAs/InAsSb等材料体系的超晶格均存在一些问题。例如InAs/GaSb体系，目前国内外相关研究机构虽已在InAs/GaSb的Ⅱ型超晶格材料外延生长与光电子器件研究方面取得了较大进展，但仍无法完全回避超晶格GaSb层中本征Ga缺陷的产生，这类缺陷将在超晶格能带中引入SRH缺陷能级，极大地缩减少子寿命并加强非辐射复合过程；进一步发展的InAs/InAsSb材料体系，因其属于非Ga的Ⅱ超晶格材料体系，故在少子寿命方面得到了明显改善，然而高Sb组分的InAsSb合金仍需面对As/Sb所导致的组分控制难以及高Sb组分需要相对较厚的InAs层以满足应变平衡的需求。总之，在材料生长控制方面存在一定难度，更重要的是这类超晶格的吸收特性也略差于InAs/GaSb。而对于InGaAs/InAsSb而言，由于Ga的重新引入，因此吸收特性有了一定的提高。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由此可以看出，对于Ⅲ-Ⅴ半导体Ⅱ类超晶格而言，从围绕延长少子寿命、提高吸收特性角度设计新型的超晶格材料体系是其重要的发展方向之一，例如InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "体系Ⅱ类超晶格。作为新的超晶格材料，其仍有许多工作需要进一步开展。如InAs(Sb)/In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": " Ⅱ类超晶格的载流子输运特性、少子寿命与吸收特性的表征以及合金化后可能引入的新的缺陷形式及其对超晶格光电性能的影响。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "此外，结构化超晶格也是Ⅱ类超晶格重要的发展方向。我们知道，阱中量子点结构(Dots in well)已经广泛用于通讯波段激光器和级联激光器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "87", "type": "bibr", "rid": "b87", "data": [ { "name": "text", "data": "87" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "b88", "data": [ { "name": "text", "data": "88" } ] } } ], "rid": [ "b87", "b88" ], "text": "87-88", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其充分利用了量子点的“声子瓶颈”效应，在零维的量子点中，其声子能级和电子能级一样都是分裂的。激发态的电子在弛豫到基态前要和声子耦合释放出一定的能量弛豫到导带底，由于它的声子能量是固定的，很难像体材料一样在短时间内耦合到合适的声子，所以量子点内的电子弛豫时间较长，这有利于提高材料的量子效率，提升有源区的增益性能，且可以提高器件的工作温度。但这种结构目前还无法在InAs/GaSb等Ⅱ类超晶格体系中实现。在我们的研究工作中，借助具有倾角的衬底，通过控制晶格在倾角衬底台阶上的迁移过程，可以在In" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "的四元合金中引入垂直于衬底分布的InAs/GaSb的Ⅱ类超晶格，同时合金表现出超晶格的能带特性，具有中红外波段的发光性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "89", "type": "bibr", "rid": "b89", "data": [ { "name": "text", "data": "89" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这个研究结果启发了人们构建结构化超晶格，未来可以通过进一步地优化外延生长过程得到完全垂直于衬底分布的Ⅱ类超晶格，以及得到类似阱中量子点结构即量子线嵌入式的Ⅱ类超晶格。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "最后，基于新材料体系和新结构的Ⅱ类超晶格的光电子器件验证，以及后续的器件优化、工作机制分析也是Ⅱ类超晶格研究和发展的重要方向。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "b1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ESAKI L, TSU R. 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