Progress of High-efficiency Perovskite Quantum Dot Light-emitting Diodes

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "高效率钙钛矿量子点发光二极管研究进展" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Progress of High-efficiency Perovskite Quantum Dot Light-emitting Diodes" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "皮", "givenname": "慧慧", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "PI", "givenname": "Hui-hui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "bio": [ { "lang": "zh", "text": [ "皮慧慧(1996-)，女，安徽淮北人，硕士研究生,2018 年于潍坊学院获得学士学位，主要从事钙钛矿激光器方面的研究。E-mail: 1526723813@qq.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350228&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350231&type=", "big": 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"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350239&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350243&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350246&type=" } ], "data": [ [ { "name": "text", "data": "李国辉" }, { "name": "text", "data": "(1984-)，男，四川广元人，博士，副教授，硕士研究生导师,2011年于华东师范大学获得博士学位，主要从事微纳光子与光电子学领域(包括钙钛矿激光器、表面等离激元纳米器件、有机及钙钛矿光电探测器等)的研究。E-mail:" }, { "name": "text", "data": "liguohui@tyut.edu.cn" } ] ] } ], "email": "liguohui@tyut.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "周", "givenname": "博林", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHOU", "givenname": "Bo-lin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "崔", "givenname": "艳霞", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CUI", "givenname": "Yan-xia", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor4", "lang": "en", "text": "yanxiacui@gmail.com", "data": [ { "name": "text", "data": "yanxiacui@gmail.com" } ] } ], "bio": [ { "lang": "zh", "text": [ "崔艳霞(1984-)，女，山西吕梁人，博士，教授，博士研究生导师, 2011年于浙江大学获得博士学位，主要从事微纳光子与光电子学领域(包括表面等离激元纳米器件、有机及钙钛矿光电探测器及钙钛矿激光器等)的研究。E-mail: yanxiacui@gmail.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350251&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350252&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350255&type=" } ], "data": [ [ { "name": "text", "data": "崔艳霞" }, { "name": "text", "data": "(1984-)，女，山西吕梁人，博士，教授，博士研究生导师, 2011年于浙江大学获得博士学位，主要从事微纳光子与光电子学领域(包括表面等离激元纳米器件、有机及钙钛矿光电探测器及钙钛矿激光器等)的研究。E-mail: " }, { "name": "text", "data": "yanxiacui@gmail.com" } ] ] } ], "email": "yanxiacui@gmail.com", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "太原理工大学　物理与光电工程学院，山西 　 太原 　 030024", "data": [ { "name": "text", "data": "太原理工大学　物理与光电工程学院，山西 　 太原 　 030024" } ] }, { "lang": "en", "label": "1", "text": "College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China", "data": [ { "name": "text", "data": "College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "钙钛矿量子点具有光致发光量子产率高、发光光谱可调、光谱宽度窄、缺陷容忍度高以及独特的量子限域效应等优点，因此成为研制新型高效率发光二极管(LED)的热门材料。本文介绍了近几年基于钙钛矿量子点LED的研究最新进展。首先，介绍了钙钛矿量子点独特的晶体结构及钙钛矿发光器件的工作原理。然后，阐述了合成高光致发光量子产率(PLQY)量子点的方法及提高钙钛矿量子点LED效率的若干方法。最后，分析了当前钙钛矿量子点LED所面临的挑战如不稳定性及毒性，以及可应用在显示和照明方面的高效率LED所展现的前景。本综述为研制更高效率以及更加安全的钙钛矿量子点发光器件提供了有益的见解。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Perovskite quantum dots(QD" }, { "name": "sub", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": ") are attracting materials for realizing new efficient light-emitting diode(LED) due to their merits such as high photoluminescence quantum yield, adjustable luminous spectrum, narrow spectral width, high defect tolerance and unique quantum confined effect. This paper introduces the latest progress in the research of perovskite-based quantum dot light-emitting diodes in recent years. Firstly, the unique crystal structure of perovskite quantum dot and the working principle of perovskite light-emitting device are introduced. Secondly, the method of synthesizing high photoluminescence quantum yield(PLQY) quantum dot and several methods of improving the LED efficiency of perovskite quantum dot are described. Finally, we analyzed the challenges faced by perovskite QD" }, { "name": "sub", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": " such as instability, toxicity and the prospects for developing efficient LED for applications in display and lighting. This review is expected to provide helpful insights for promoting the efficiency and safety of QD" }, { "name": "sub", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "量子点" } ], [ { "name": "text", "data": "钙钛矿发光二极管" } ], [ { "name": "text", "data": "光致发光量子产率" } ], [ { "name": "text", "data": "外量子效率" } ], [ { "name": "text", "data": "电流效率" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "quantum dots" } ], [ { "name": "text", "data": "perovskite LED" } ], [ { "name": "text", "data": "photoluminescence quantum yield" } ], [ { "name": "text", "data": "external quantum efficiency" } ], [ { "name": "text", "data": "current efficiency" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "全球约有20%25%的电力用于照明，相较于白炽灯与荧光灯，半导体发光二极管(LED)更加节能。其在低工作电压下具有高强度的光输出、较低的发热损失以及较长的使用寿命等特性使其具有很好的经济性" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。以砷化镓、氮化镓等传统无机半导体材料制备的LED照明器件需要严苛的生长条件" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R2", "R3", "R4" ], "text": "2-4", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，而且受到高电阻欧姆接触以及昂贵制作成本的限制" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。与之相比，有机LED(OLED)虽然具有高发光效率、成本降低等优势，但其在高电流密度下存在明显的效率滚降" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。因此，寻找一种效率高、制备工艺简单且成本低的光电材料做LED的发光层成为新的研究热点。作为新兴明星材料的钙钛矿因其独特的光电性能，例如理想的直接带隙、高光吸收系数及长载流子传输距离和较低的制作成本等，已在太阳电池" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R7", "R8", "R9", "R10" ], "text": "7-10", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } } ], "rid": [ "R11", "R12", "R13", "R14" ], "text": "11-14", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、激光器" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "R15", "R16", "R17", "R18" ], "text": "15-18", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "及发光二极管" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R19", "R20", "R21" ], "text": "19-21", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "等领域得到了广泛应用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿材料优异的光电性能使得研究者们相信将钙钛矿材料从块体结构减小到纳米尺寸，会有更好的发光特性" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。纳米尺寸的钙钛矿量子点的电子带隙结构受到量子限域效应的影响，呈现出独特的光学特性" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。准零维钙钛矿量子点较二维、三维钙钛矿的主要优势在于其独特的量子限域效应，可以通过改变尺寸来调控其光学与电学性质" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R24", "R25" ], "text": "24-25", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，通过将载流子束缚在量子点结构中，可以有效增强电子和空穴之间的相互作用，提高载流子形成激子的几率以及载流子的辐射复合几率" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。基于钙钛矿量子点的LED的外量子效率(EQE)主要取决于发光层的质量，可以通过优化制备方法、调整组成等来提高质量。与钙钛矿薄膜相比，钙钛矿量子点薄膜具有色域高、颜色纯、性能稳定的优点，基于此制备的光伏器件性能更佳" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。2015年，南京理工大学曾海波课题组首次将钙钛矿量子点材料应用于LED，他们使用热注入法制备CsPb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点用于LED，得到的EQE低于0.12%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。经过近几年的快速发展，加拿大多伦多大学Sargent 课题组利用双极表面置换方法，提高CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿量子点的载流子迁移率(≥0.01 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")，基于全无机钙钛矿量子点的绿色LED的EQE最高已经达到22%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。但目前钙钛矿量子点LED因钙钛矿材料的固有缺陷使其在稳定性、毒性等方面所面临的挑战仍然十分艰巨。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文将从钙钛矿量子点材料独特的晶体结构及钙钛矿LED基本原理出发，综述研究者们制备高光致发光量子产率(PLQY)量子点的方法，包括热注入法、配体辅助再沉淀法、非水乳法等。然后，综述了提高钙钛矿量子点LED的EQE所采用的策略，主要包括表面配体工程、界面修饰、钝化以及能级对准等。最后，总结了目前钙钛矿量子点LED在显示和照明方面的前景与在稳定性、毒性方面所面临的挑战。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　钙钛矿量子点LED原理" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　钙钛矿量子点的晶体结构" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿是以俄罗斯矿物学家Von Perovski的名字命名的，其化学结构通式可描述为" }, { "name": "italic", "data": [ { "name": "text", "data": "ABX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } } ], "rid": [ "R30", "R31" ], "text": "30-31", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，由一价阳离子" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "(如MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "等)、二价金属阳离子" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "(Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Bi" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "等)和卤族元素" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "(Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "、Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "、I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "等)组成，晶体分子结构如" }, { "name": "xref", "data": { "text": "图1(a)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(a)" } ] } }, { "name": "text", "data": "所示。根据" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "位元素的不同，将含有有机阳离子的钙钛矿称为有机-无机杂化钙钛矿(Hybrid organic-iorganic perovskite,OHIP)，只含有无机金属离子的钙钛矿称为全无机钙钛矿(All-inorganic perovskite,AIP)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。与有机-无机杂化的钙钛矿相比，全无机钙钛矿的稳定性更佳" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。钙钛矿的主要优点有:吸收系数高(" }, { "name": "text", "data": ">" }, { "name": "text", "data": "1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")，载流子扩散长度长(" }, { "name": "text", "data": ">" }, { "name": "text", "data": "170 μm)，电子和空穴的有效质量小((0.0690.25)" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为电子的静止质量)以及载流子陷阱密度相对较低" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。同时，钙钛矿材料的可溶液加工、柔性器件制备等特性，使得工艺简单、价格低廉的大面积器件制备成为可能，使其在显示、照明和光通信方面都有广泛的应用前景。其中钙钛矿量子点属于准零维材料，平均粒径约为10 nm，如" }, { "name": "xref", "data": { "text": "图1(b)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(b)" } ] } }, { "name": "text", "data": "所示，光致发光(PL)光谱覆盖可见光波长范围且具有窄的光谱线宽" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } } ], "rid": [ "R34", "R35", "R36" ], "text": "34-36", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。与二维和三维钙钛矿相比，该晶体的几何半径小于其激子波尔半径，具有独特的量子限域效应，具有更高的PLQY" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。就材料尺寸效应而言，本征缺陷的数量会随着材料的体积缩小而减少，且由于自排除作用而进一步减少。并且可以通过控制卤化物或调节量子点的尺寸大小，使钙钛矿量子点的发光波长在可见光范围内可调谐。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "钙钛矿量子点结构及性质示意图。(a)钙钛矿量子点晶体结构图;(b)钙钛矿量子点TEM图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(c)钙钛矿LED工作机理示意图，钙钛矿活性层夹在HTL和ETL之间" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Schematic diagram of perovskite structure and properties. (a)Crystal structure of perovskite quantum dots. (b)TEM images of perovskite quantum dots" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (c)Schematic diagram of working mechanism of perovskite LED. The perovskite active layer is sandwiched between the HTL and ETL" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350258&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350265&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350261&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "基于钙钛矿量子点作为发光层的光伏器件已经成功实现发光颜色为红光、绿光、蓝光、近红外光等的 LED 器件，实现了钙钛矿材料从近红外到可见光范围的不同颜色发光，是钙钛矿在显示、照明和光通信等方面大有作为的重要保障。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　钙钛矿量子点LED的工作原理及效率影响因素" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "典型的钙钛矿量子点LED器件的结构，两端为两个平行电极，钙钛矿量子点发光层通常夹在p型空穴传输层(HTL)和n型电子传输层(ETL)之间，如" }, { "name": "xref", "data": { "text": "图1(c)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(c)" } ] } }, { "name": "text", "data": "所示。当向两个电极施加正向偏压时，载流子通过HTL和ETL注入到钙钛矿薄膜中。位于导带中的电子和价带中的空穴通过辐射复合发射光子" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } } ], "rid": [ "R38", "R39" ], "text": "38-39", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。钙钛矿基LED按照能量供应方式的不同可以分为光致发光和电致发光，光致发光是由吸收入射光子而发出的光，而电致发光是由于电流供应的能量而产生的发光" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "决定LED性能的关键参数包括EQE、功率效率(PE)、电流效率(CE)、最大亮度(" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": ")和稳定性等。高EQE钙钛矿量子点LED能够以更少的电能来获取相同的光子产生。钙钛矿量子点LED的EQE(" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": ")由以下几个因素决定:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350268&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350274&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350278&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "QE" } ] }, { "name": "text", "data": "是指作为发光层的钙钛矿的PLQY;" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "称为电荷注入平衡因子;" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "OUT" } ] }, { "name": "text", "data": "是提取或未耦合效率，表示在有源区域产生的光子中逃逸出器件的比例" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } } ], "rid": [ "R41", "R42" ], "text": "41-42", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。钙钛矿量子点LED的功率效率公式为:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350283&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350287&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350291&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "是释放到自由空间的能量," }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "分别是电流和电压。钙钛矿量子点LED的电流效率公式为:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350295&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350298&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350302&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF3" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "是LED的亮度," }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "是电流密度" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。这里主要讨论钙钛矿量子点LED的EQE，可以从以下几个方面着手来提高钙钛矿量子点LED的效率。一是通过更换表面配体、钝化表面缺陷等方法使量子点薄膜具有低缺陷密度、高覆盖率且平整连续的优点，以增强内部激子辐射复合，从而提高钙钛矿的PLQY，进而提高器件的EQE。二是通过在缓冲层与发光层之间加入界面修饰剂或通过修改HTL和ETL层来提高能级排列，平衡钙钛矿量子点LED中的电子和空穴注入速率，提高电荷注入平衡因子，从而提高钙钛矿量子点LED的EQE。三是使用增加图案化光栅或利用钙钛矿晶粒与低折射率绝缘有机层组成发光层，利用光提取技术提高LED的出光效率" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　高PLQY钙钛矿量子点制备" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿量子点的合成方法主要包括热注入法(HI)、配体辅助再沉淀法(LARP)、非水乳法等。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　热注入法" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿量子点最常用的制备方法是热注入法。2015 年，苏黎世联邦理工学院Kovalenko团队首次报道了热注入法，并基于此合成了CsPb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点。将Pb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "加入油酸(OA)、油胺(OAm)和十八碳烯(ODE)的混合物中，在氮气保护及高温条件下，将Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "前驱体溶液加入上述反应体系中;之后，反应物通过冰浴快速冷却后，将沉淀分散纯化制备出钙钛矿量子点。其中,OAm和OA在该方法中充当表面活性剂，并被吸附在钙钛矿的表面，这些表面活性剂的功能是控制钙钛矿的形态和尺寸" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } } ], "rid": [ "R45", "R46" ], "text": "45-46", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。这里的Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "前驱体溶液通常采用碳酸铯和ODE制备，同时需要用油酸作为共溶剂，经酸置换反应生成油酸铯溶液。但是，碳酸铯在ODE中溶解度较低，且该反应需要在一定温度下进行。为了缓解上述问题，吉林大学张宝林教授课题组使用具有更好溶解性的醋酸铯作为合成前体的原料，有效降低了反应温度对合成钙钛矿量子点质量的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。有机-无机杂化的FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米晶(NCs)也可以通过热注入法制备，类似于全无机CsPb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米晶，通过Pb和醋酸甲脒与ODE中的OA反应来制备FA-Pb前体溶液。在130 ℃下，注入溴化乙铵(OAm Br)。10 s后，将FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "冷却至室温，并分别使用甲苯和乙腈作为溶剂和非溶剂进行纯化。这种简单的合成方法产生了明亮发光、立方形状和高度单分散的FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " NCs，其具有高达88%的高PLQY和小于22 nm的FWHM" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "48", "type": "bibr", "rid": "R48", "data": [ { "name": "text", "data": "48" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。但热注入法一般需要高温且需要惰性气体的辅助，增加了合成成本，且限制了大规模生产。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　配体辅助再沉淀法" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "配体辅助再沉淀法是将钙钛矿前体盐(碘化铵(MAI)和Pb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")溶解在极性溶剂(通常是N,N-二甲基甲酰胺(DMF)或二甲基亚砜(DMSO))中，将生成的溶液快速注入通常包含长链封端配体的抗溶剂(通常是甲苯或己烷)中(如" }, { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "所示)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。这些配体具有多种功能，包括提高卤化铅盐前体的溶解度、控制结晶动力学并稳定最终的胶体分散液。中国香港城市大学Rogach课题组系统地研究了配体总量、配体与前驱体的比例、反应温度等对纳米晶的影响，通过调控长碳链有机胺配体与前驱体的比例，可调控MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " NCs的大小和厚度，且这些配体可有效钝化钙钛矿纳米晶的表面" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。传统的配体辅助再沉淀法制备的钙钛矿量子点的PLQY及稳定性不佳，为进一步提高量子点性能，西南交通大学杨维清课题组通过内外结合的策略减少缺陷。由于DMF和PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "具有很强的结合力,DMF会牢固地附着在MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的表面，去除过程中会产生内部碘空缺，因此，缺陷量与DMF呈正相关。在制备过程中通过降低极性溶剂DMF的剂量和外部使用短链配体钝化的内外结合的策略，制备出的量子点的空气稳定性提高了4个数量级(从几分钟提高到几十天),PLQY是原来的两倍(从42%提高到80%)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。另外，配体辅助再沉淀法相较于热注入法，其通常在室温下进行，简化了实验条件，可大规模制备。相较于传统的量子点材料，钙钛矿材料可直接由前驱体材料通过原位制备的方法得到高质量的发光薄膜，合成较简便，可实现大尺寸器件的制备。2018年，北京理工大学钟海政教授课题组首次使用叠氮磷酸二苯酯-溴(DPPA-Br)作为配体，在钙钛矿前驱体溶液中滴加甲苯作为反溶剂。通过对反溶剂滴加时间的精细控制，在纳米晶即将发生形核之前，快速滴加反溶剂，引起前驱体溶液中过饱和度的变化，从而促使NCs的形核和生长，原位制备了高效发光的FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米晶薄膜。该方法制备的薄膜表面平整均匀，由520 nm的FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " NCs钙钛矿纳米晶体组成，具有高荧光量子产率" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "R52", "data": [ { "name": "text", "data": "52" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "合成胶体钙钛矿量子点方法示意图。(a)配体辅助再沉淀法" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(b)非水乳法量子点乳液合成示意图:(ⅰ)乳液的形成,(ⅱ)加入破乳剂的乳液，然后再分散到胶体溶液中,(ⅲ)纯化成固态粉末" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Schematic illustration of the methods for the synthesis of colloidal perovskite QD. (a)Ligand assisted reprecipitation" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (b)Schematical illustration of the QD emulsion synthesis: (ⅰ)formation of the emulsion, (ⅱ)demulsion by adding demulsifier, and redisperse into colloidal solution, (ⅲ)purification into solid-state powder" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350306&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350315&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350310&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　非水乳法" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "目前已经通过热注入方法或配体辅助再沉淀方法等成功地制备了具有增强PL特性的胶体钙钛矿量子点，但胶体量子点必须进行纯化，以除去过量的前体和表面活性剂。遗憾的是，有机-无机杂化的CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Pb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿在许多极性溶剂(例如DMF、甲醇和乙醇)中不稳定。基于此，北京理工大学钟海政课题组采用非水乳法，经过乳液的形成及破乳，通过调节作为破乳剂和沉淀剂的叔丁醇的量来调节MAPb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的大小，如" }, { "name": "xref", "data": { "text": "图2(b)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)" } ] } }, { "name": "text", "data": "所示。通过控制乳化及破乳过程，得到了28 nm的尺寸可调量子点，其可以通过可控沉淀从反应溶液中提取,PLQY超过80%。这种方法同样可以扩展到胶体CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的制备，但所得的量子点的PL光谱与量子点大小无明显相关关系" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。2017年，北京大学冉广照课题组改进了非水乳法，通过改变表面配体正辛胺(OLAM)的添加量来控制CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的大小和发射颜色。以OLAM分子为表面配体的固体量子点可以很容易地溶解在非极性或弱极性溶剂中，形成致密且均匀的量子点膜，其最高的PLQY超过96%，这些高PLQY的量子点具有制备高性能光电器件的潜力" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。随后，大庆师范学院任艳东课题组受到启发，使用不同数量的配体(OA和OLAM)，由于MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "表面与OLAM的胺基相互作用，低浓度的OLAM用于增加成核数及成核速率，高浓度的OLAM起到钝化MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "表面缺陷的作用，通过不同OLAM浓度，调节成核和钝化度，可以更好地控制其光学性能。最终获得的MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "绿色发光量子点的半高全宽(FWHM)值为1924 nm,PLQY为85%90.2%，且由于添加了OA，钙钛矿量子点显示出较高的稳定性。这将为钙钛矿相关卤化量子点的制备提供新的策略，并可能进一步增强其在照明或显示领域的竞争力" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "上述钙钛矿量子点的制备方法极大地促进了钙钛矿纳米材料的研究进程，钙钛矿量子点合成后，为了降低水氧对钙钛矿量子点溶液的影响，可以在合成量子点的同时使用PMMA等高分子聚合物进行包裹，隔绝水氧分子对钙钛矿结构的破坏，同时利用高分子聚合物紧密的化学键使钙钛矿量子点进行单元上的分离，达到分散均匀的效果，降低量子点的团聚现象" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　提高钙钛矿量子点LED性能的策略" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "迄今为止，高PLQY的量子点的研究已经取得了长足的进步，用于提高钙钛矿量子点LED效率的策略包括表面配体工程、界面修饰、钝化、能带对齐等。表面配体工程中主要包括引入合适的短链配体或进行纯化，从而在表面钝化和电荷载流子注入之间达到适当的平衡;界面修饰主要包括在发光层和缓冲层之间引入合适的界面修饰剂;钝化包括表面封装以及材料内部钝化等;量子点LED能带对齐主要是在发光层和导电电极之间加入合适的缓冲层提高能级对准。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.1　表面配体工程" } ], "level": "2", "id": "s4a" } }, { "name": "p", "data": [ { "name": "text", "data": "全无机CsPb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "=Cl、Br、I)量子点LED中,CsPb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点一般可以用长有机配体(如OAm和OA)提供足够的表面钝化，消除表面缺陷，提高PLQY和使其表面稳定化。但量子点之间绝缘的有机长链配体会阻碍有效电荷载流子在量子点之间的流动，导致了传输问题，最终会损害设备性能。表面配体工程解决了这个问题，表面配体工程主要是基于溶液相预处理和薄膜的后处理。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.1.1　溶液相预处理" } ], "level": "3", "id": "s4a1" } }, { "name": "p", "data": [ { "name": "text", "data": "为了增强电荷的注入效率,2016年，南京理工大学曾海波课题组通过使用己烷/乙酸乙酯混合溶剂对量子点进行可回收处理以控制表面配体的密度，通过OA和OAm配体密度的降低，实现了对载流子注入的调控，获得了更高的电荷注入效率。基于CsPb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的LED的绿色电致发光(EL)及PL的FWHM仅为20 nm且EQE可达6.27%，如" }, { "name": "xref", "data": { "text": "图3(a)、(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)、(b)" } ] } }, { "name": "text", "data": "所示，比曾海波课题组首次报道" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "的效率高出约50倍，但这种量子点需在高温且氩气惰性气体条件下制备" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。为简化实验条件，降低实验成本,2018年，该课题组在室温且无需惰性气体保护的条件下(过程如" }, { "name": "xref", "data": { "text": "图3(c)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(c)" } ] } }, { "name": "text", "data": "所示)使用相对短链的三配体(四辛基溴化铵(TOAB)、十二烷基二甲基溴化铵(DDAB)和辛酸(OTAc)协同促使 “理想的”钙钛矿量子点具有大于90%的PLQY。其中,TOAB可以提高PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的溶解度;DDAB的引入创造了富Br的环境，提高了量子点的PL强度及稳定性;OTAc促使器件中的量子点具有较高的载流子注入和运输能力。与此同时，添加少量的FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "掺杂剂可进一步提高量子点LED的效率，基于CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的绿色电致发光LED的功率效率为44.65 lm/W,EQE为11.6%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。为了进一步提高钙钛矿量子点LED的效率,2018年，合肥工业大学蒋阳课题组利用具有苯环和短支链的π共轭配体苯乙胺(PEA)作为配体直接引入来合成CsPb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点，将其作为发光层制备出钙钛矿LED，短支链共轭分子配体被成功吸附在CsPb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点表面取代了较长的绝缘配体，显著增强了载流子的注入和运输。制备的CsPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点LED的EQE达到14.08%(如" }, { "name": "xref", "data": { "text": "图3(d)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(d)" } ] } }, { "name": "text", "data": "所示)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。合适的配体不仅可以增强载流子传输，还起到降低量子点的陷阱态密度、提高稳定性的作用。当聚合物结构中含有多氨基、羟基等基团形成多齿配体聚合物时，即可增强配体与量子点之间的作用来实现钙钛矿量子点稳定性的提升。2020年，苏州大学马万里课题组将L-苯丙氨酸(L-PHE)作为配体加入到前体溶液中,L-PHE是一种芳香族双功能配体，可以与量子点表面的阳离子和离子配位,L-PHE的添加有利于表面空位填充及与配位不足的离子键合，稳定了量子点并降低了陷阱状态。L-PHE封端的CsPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点用于红色量子点LED的发光层，可实现LED的EQE达10.21%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "(a)具有两个纯化循环的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " 量子点LED的归一化EL光谱(实线)和PL光谱(虚线)，插图中的照片显示了在5 V施加电压下的工作设备(发射面积为2 mm×2 mm)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(b)设备的EQE与亮度的关系" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(c)合成和处理过程示意图，其中将Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "和OTAc前体溶液添加到PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和TOAB甲苯溶液中" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(d)CsPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点LED的EQE曲线，无PEA、0.2 PEA以及0.2 PEA和PEAI处理" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "(a)Normalized EL spectra(solid lines) and PL spectra(dashed lines) of CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " QLEDs with two purifying cycles. Inset: the photograph shows a working device(with an emitting area of 2 mm×2 mm) at an applied voltage of 5 V" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (b)EQE of these devices as a function of luminance" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (c)Schematic representation of the synthesis and treatment process, where the Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " and OTAc precursor solution is added into the PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " and TOAB toluene solution" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (d)EQE curves of CsPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " QLED without PEA, with 0.2 PEA and with 0.2 PEA and PEAI treatment" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350327&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350337&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350332&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.1.2　薄膜的后处理" } ], "level": "3", "id": "s4a2" } }, { "name": "p", "data": [ { "name": "text", "data": "EQE的损失主要是由于光子生成效率低和注入的电荷载流子效率低。溶液相预处理提高了注入电荷的载流子效率。为了实现有效的光子生成，必须将陷阱缺陷态导致的非辐射复合引起的损耗降至最低，适量的表面配体可以对钙钛矿量由子点表面进行钝化，减少表面缺陷态密度，但过量的配体(例如OAm和DDAB)会使钙钛矿薄膜成膜性较差且不稳定。因此，合成的或配体交换的钙钛矿量子点需要洗涤过程以去除过量的配体。2017年，日本山行大学Chiba课题组使用含有乙酸丁酯(AcOBu)的酯溶剂去除钙钛矿量子点表面多余的配体，抑制了量子点之间的能量转移。用AcOBu洗涤过的钙钛矿量子点薄膜的PLQY为42%，产率为10%，制造了最大功率效率为31.7 lm/W、EQE为8.73%的高效率的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿量子点发光器件" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。随后，该课题组使用低介电常数为" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "text", "data": "=7.23的醚溶剂二甘醇二甲醚作为不良的再沉淀溶剂，可以进行多个洗涤循环，如" }, { "name": "xref", "data": { "text": "图4(a)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)" } ] } }, { "name": "text", "data": "所示，从而实现了高纯度、高PLQY(50%)和高产率(26%)的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点。两次清洗后的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的LED表现出超过8%的峰值EQE(如" }, { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "所示)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。与使用另一种酯溶剂AcOBu的纯化过程相比，在二甘醇二甲醚两次洗涤纯化过程之后,CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " 量子点的产率及PLQY更高。在室温条件下制备量子点的情况下，仅使用配体清洗去除技术还不够，仍然需要额外的配体工程和退火步骤，以从量子点薄膜中去除过量的配体，同时防止量子点的团聚。2018年，韩国庆熙大学Eric Moyen等使用配体辅助再沉淀方法制备钙钛矿量子点，经过多次清洗以及退火工艺，且为了防止量子点的聚集和薄膜中的聚结，优选使用更稳定和导电性更高的DDAB作为封端配体，将光活化后CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点用于倒置LED的发光层，该设备的功率效率为9.70 lm/W,EQE为5.7%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "(a)CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿QD 的配体交换和洗涤过程示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(b)用二甘醇洗涤CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点LED的EQE-电流密度特性" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(c)LED能级图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "(a)Schematic of the ligand exchange and washing process for CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " PQDs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (b)EQE-current density characteristics of CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " QD-LEDs washed with diglyme" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (c)Energy diagram of the devices" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350342&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350350&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350346&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.2　界面修饰" } ], "level": "2", "id": "s4b" } }, { "name": "p", "data": [ { "name": "text", "data": "利用界面修饰提高钙钛矿量子点LED的外量子效率，主要通过改善载流子传输层与钙钛矿层界面处的缺陷，控制传输并最大程度地减少界面处的电荷载流子捕获。近些年来，研究者已经使用了各类界面修饰剂，如甜菜碱" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、聚乙烯吡咯烷酮(PVP)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、聚甲基丙烯酸甲酯(PMMA)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、聚乙烯亚胺(PEI)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "等。理想的界面修饰剂能够形成致密的均质薄膜并提供较大的界面面积，以改善界面性质且实现高效的电荷转移。2018年，苏州大学孙宝全课题组在具有较高迁移率的HTL材料poly-TPD和钙钛矿层之间引入聚［(9,9-二(3" }, { "name": "sup", "data": [ { "name": "text", "data": "," } ] }, { "name": "text", "data": "-(N,N-二甲氨基)丙基)芴基-2,7-二正辛基芴基-2,7-二基)］(PFN)，增加疏水聚合物三苯基二胺衍生物(poly-TPD)的表面能，改善HTL与钙钛矿层之间的界面接触，有效抑制非辐射复合，制备出高效的绿色LED，峰值电流效率为45.2 cd/A,EQE为14.4%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "R67", "data": [ { "name": "text", "data": "67" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。EQE的提高主要通过抑制非辐射复合，同时增加辐射复合。通过表面化学方法制备界面修饰剂可以修改功函数并起到平滑电子传输路径的作用，有助于实现辐射复合。2020年，吉林大学郑伟涛课题组通过使用不同比例的常见前体柠檬酸(CA)和乙二胺(EDA)合成了表面具有不同胺或羧基含量的碳点，将其用于修改常用的铟锡氧化物(ITO)基板的功函数。碳点改性剂有助于电子从ETL注入到发光层，平滑电子传输路径，并将注入的电荷载流子限制在发光层中，以实现有效的辐射复合。经过优化碳点中间层的CsPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点LED的EQE从4.8%提高到10.3%，如" }, { "name": "xref", "data": { "text": "图5(a)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(a)" } ] } }, { "name": "text", "data": "所示" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。为了使钙钛矿层免受其他溶剂的腐蚀,2020年，华中科技大学陈蓉课题组引用原子层沉积(ALD)技术在CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "发光层上制备Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "填充层，并制作了基于无机电子传输层的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-ZnMgO LED器件(器件制备工艺如" }, { "name": "xref", "data": { "text": "图5(b)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(b)" } ] } }, { "name": "text", "data": "所示)。ALD 是一种自限制的气相表面化学反应，可以防止钙钛矿层受到其他溶剂的腐蚀，经过ALD处理的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的使用寿命明显延长并且EQE值大大提高。在CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层中填充Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "可以使载流子迁移率在发光层内部提高40倍以上，且绝缘的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层阻碍了不同功能层之间的界面载流子传输，这为过量电子传输提供了有效的屏障。这种有利的能带对准促进了器件的载流子平衡，并且有助于具有ALD Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件的EL性能的改善" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "(a)CsPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点LED亮度和EQE与电流密度的关系" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(b)ALD辅助PNC-ZnMgO LED制作工艺示意图及PNC-ZnMgO LED断面SEM图像" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "(a)Luminance and EQE " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " current density of CsPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " QD LEDs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ".(b)Schematic diagram of PNC-ZnMgO LED fabricated process assisted by ALD and cross-sectional SEM image of PNC-ZnMgO LED" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350356&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350366&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350361&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.3　钝化" } ], "level": "2", "id": "s4c" } }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿量子点作为一种小尺寸量子点，激子束缚能较大，其荧光发射主要来源于激子复合而非自由电子与空穴的复合。因此，通过表面钝化效应，进一步减少钙钛矿的表面缺陷，是获得高效荧光量子产率的有效方法。合适的钝化剂不仅可以减少表面缺陷，而且可以抑制氧气和水分引起的表面分解。为此，许多研究者利用钝化提高钙钛矿量子点LED的器件性能以及使用寿命" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，主要可以通过对其表面或内部进行钝化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在钙钛矿量子点表面形成封装层进行钝化的方法中，表面旋涂是最简单有效的方法。2018年，广西大学陈红梅课题组旋涂稳定和高度透明的PMMA聚合物钝化CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的针孔，有效钝化针孔表面，减少非辐射电流损耗，实现了均匀的表面覆盖，降低了泄漏电流，将以534 nm为中心的EL功率提高10倍" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。量子点采用外部包覆的方法不仅可以增强其PLQY且使量子点更加稳定。中科院刘星元课题组等通过使用改进的硅烷配体辅助再沉淀方法，室温下在空气中简单地混合和搅拌而不添加水和催化剂来合成二氧化硅包覆的钙钛矿量子点，蓝色、绿色和红色量子点的最高 PLQY分别为56%、95%和70%(如" }, { "name": "xref", "data": { "text": "图6(a)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(a)" } ] } }, { "name": "text", "data": "所示)。不同的发光量子点在混合后可以保持其原始的PL特性且不发生阴离子交换反应，这有利于制备电致发光白色LED。根据这些属性将发射绿色和黄色的量子点与聚苯乙烯(PS)混合以形成颜色转换层，可制造出高色纯度和显色指数的白色LED，其最高功率效率达到54 lm/W" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。同年，中央民族大学彭洪尚课题组采用一种新型的水溶胶-凝胶法辅助新鲜制备的CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点共价嵌入二氧化硅中，此前采用的二氧化硅涂层来稳定封装钙钛矿量子点的方法只能有限地提高稳定性。溶胶-凝胶封装是在水和乙醇的混合物中完成的，利用甲基胺溴(MABr)抑制量子点的分解同时配位的MABr提供足够的配体来钝化表面缺陷，提高了量子点表面质量" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "73", "type": "bibr", "rid": "R73", "data": [ { "name": "text", "data": "73" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "(a)在365 nm光照下具有不同量比的Pb∶Si的MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "量子点的数字图像和PL光谱" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(b)PQDs∶PEO复合溶液的合成过程" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(c)钙钛矿量子点LED的EQE" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(d)双面钝化的器件EQE统计" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "(a)Digital picture and PL spectra of MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " QDs with different molar ratios of Pb∶Si under illumination of 365 nm light" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (b)Synthesis process of PQDs∶PEO composite solution" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (c)EQE of perovskite QD LED" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (d)EQE statistics of devices structure with bilateral passivation" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350371&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350380&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350376&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿量子点LED的钝化可以在量子层内部进行,2019年，西北工业大学黄维课题组通过将聚环氧乙烷(PEO)聚合物掺杂到MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿量子点溶液中(过程如" }, { "name": "xref", "data": { "text": "图6(b)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(b)" } ] } }, { "name": "text", "data": "所示)，制备出高质量的钙钛矿量子点-PEO复合膜，其作为发光层获得电流效率和EQE分别达到8.30 cd/A和2.38%的MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "绿色钙钛矿量子点LED，同时，亮绿色的MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "LED在设备运行期间也显示出出色的光谱和EL稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。另外,2020年，伊朗研究者Ahmadi在制备时加入包含配位基团的无定形聚合物聚乙烯基吡咯烷酮(PVP)作为钙钛矿量子点钝化剂，钙钛矿与聚合物活性基团之间的键合相互作用引起边界缺陷钝化，可在玻璃和柔性基板上同时形成耐久的钙钛矿量子点及其稳定PLQY大于98%的无针孔薄膜。将该量子点薄膜用于绿色钙钛矿LED的发光层，在无ETL的情况下其电流效率为48.18 cd/A，功率效率为6.88 lm/W,EQE为10.5%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "(如" }, { "name": "xref", "data": { "text": "图6(c)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(c)" } ] } }, { "name": "text", "data": "所示)。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "除了在量子点层内部单面钝化，还可以进行双面钝化策略。2020年，曾海波课题组通过在量子点薄膜上下插入膦氧化物钝化层，有效减少缺陷陷阱和非辐射复合，基于此的量子点的LED的EQE从7.7%增长到18.7%(如" }, { "name": "xref", "data": { "text": "图6(d)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(d)" } ] } }, { "name": "text", "data": "所示)，且双向钝化分子作为钙钛矿层与电荷传输层之间的阻隔，使器件具有更好的稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。双面钝化相较单面钝化，能够更有效地保护量子点，提高外量子效率，但所需工艺相对更复杂，成本更高昂。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.4　能级对准" } ], "level": "2", "id": "s4d" } }, { "name": "p", "data": [ { "name": "text", "data": "与基于CdSe/ZnS量子点的LED和OLED相比，基于钙钛矿量子点LED的EL强度仍然较低，通过器件结构优化的方法也能够实现高外量子效率钙钛矿量子点LED。为了追求更高的EQE，研究者们所使用的方法之一是通过添加更多的功能层，例如HIL、EIL、HTL、ETL等。通过减少钙钛矿层与电荷注入层之间的能垒，可以显著提高钙钛矿LED的效率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "合适的功能层具有良好的对准能级的作用，可最小化能垒，从而制备出高效率器件" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。在先前的报道中，研究者们通常使用PEDOT∶PSS、TPBi、PCBM等有机物或聚合物作为载流子注入层，其具有高电子亲和力和良好的电子传输能力" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。但是，有机物和聚合物的空穴阻塞能力低，并且对氧气和水分敏感。无机金属氧化物成为一个充当功能层的很好的选择，主要由于其具有高的化学稳定性和高的载流子迁移率。例如,2017年，郑州大学单崇新课题组使用无机钙钛矿CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点作为发光层、无机n型MgZnO作为EIL、p型MgNiO作为HIL制备了堆叠的全无机多层结构LED器件(结构如" }, { "name": "xref", "data": { "text": "图7(a)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)" } ] } }, { "name": "text", "data": "所示)，制作的钙钛矿量子点LED的EQE为2.39%" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。随后,2018年，重庆大学唐孝生课题组使用ZnO作为ETL、CBP/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为双HTL制作了具有三明治结构的倒置量子点LED，提高了器件性能" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "(a)p-MgNiO/CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/n-MgZnO/n" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "-GaN异质结构二极管示意图及截面SEM图像" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(b)直接结构和反向结构的PeLED器件示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(c)NiO" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "-BA-CF" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "膜具有高且稳定的工作功能示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(d)NiO" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "膜和NiO" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "-BA-CF" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "膜的时间相关功函数" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "(a)Schematic diagram and cross-sectional SEM image of the p-MgNiO/CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/n-MgZnO/n" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "-GaN heterostructured diode " }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (b)Schematics of the direct-structure and inverted-structure PeLED device" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (c)High and stable work functions of the NiO" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "-BA-CF" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (d)Time-dependent work functions of the pristine NiO" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": " film and the NiO" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "-BA-CF" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " film" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350385&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350390&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350387&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "尽管已经使用功能层提高能级对准，但仍存在能级不匹配问题，研究者们通过化学掺杂、表面改性等方法来进一步增强其能级对准。2019年，深圳大学张豫鹏课题组使用无机金属氧化物TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为ETL，在TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "纳米颗粒中掺杂Li调节能级并设计适当的带隙，从而可以将有效的载流子注入发光层。制备出倒置结构的LED比正置结构的LED显示了更低的开启电压及更高的电流效率(结构如" }, { "name": "xref", "data": { "text": "图7(b)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(b)" } ] } }, { "name": "text", "data": "所示)，主要是由于正置结构中，金属氧化物层高温退火会影响TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "下方的层，破坏钙钛矿发光层的形态及完整性" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。原始溶液处理的氧化膜的功函数低于5.2 eV，不能和具有高电离电势的有机HTL之间形成低电阻接触。2020年初，浙江大学金一政课题组提出了一种通过简单地引入自组装分子层表面改性策略，实现了高稳定功函数约5.7 eV的固溶NiO" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "膜(如" }, { "name": "xref", "data": { "text": "图7(d)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(d)" } ] } }, { "name": "text", "data": "所示)，选择三氟甲基苯甲酸(BA-CF" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")来修饰原始NiO" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "膜，羧酸盐是NiO" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "表面的良好锚固基团，与高度芳香的苯环连接的强吸电子对三氟甲基基团诱导了强分子偶极子，在NiO" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "上形成BA-CF" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "分子的自组装单层膜(如" }, { "name": "xref", "data": { "text": "图7(c)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(c)" } ] } }, { "name": "text", "data": "所示)。该薄膜被用作量子点LED中的HIL，设备显示在1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的初始亮度下有约2 500 h的工作寿命，满足了显示应用的商业化要求" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4.5　其他方法" } ], "level": "2", "id": "s4e" } }, { "name": "p", "data": [ { "name": "text", "data": "除了上述常规的提高钙钛矿量子点LED外量子效率的方法以外，研究者也报道了一些提高器件效率的特殊方法。具有传统结构的钙钛矿量子点LED中的ETL通常是在高真空下制造的，这在批量生产中既费时又耗能。考虑到大规模生产，全溶液法处理具有更大潜力。福州大学李福山课题组采用超声波浴法合成钙钛矿量子点，选择乙酸盐溶剂作为正交溶剂，在无需任何真空条件下将ETL沉积在全溶液处理的钙钛矿量子点LED中。在使用乙酸甲酯(MeOAc)的最佳条件下，经过全溶液处理的钙钛矿量子点LED表现出出色的EL性能，最大电流效率为3.26 cd/A" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。另一种方法是利用阴离子交换法,2018年，日本山行大学Chiba通过使用原始CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "阴离子交换制备了使用含卤化物阴离子的烷基铵盐(OAM-I)和芳基铵盐(An-HI)。基于碘化铵盐的阴离子交换量子点在649 nm处显示出从绿色发射到深红色发射的强烈红移，以及更高的PLQY。具有OAM-I的量子点基发光器件表现出21.3%的EQE和高色纯度发光，具有An-HI的器件显示的EQE为14.1%，如" }, { "name": "xref", "data": { "text": "图8(a)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(a)" } ] } }, { "name": "text", "data": "所示" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "(a)钙钛矿量子点LED 的EQE曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ";(b)CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/CdS量子点示意图,CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(绿色)和CdS(蓝色)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "(a)EQE curves of perovskite QD LEDs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": ". (b)Schematic diagram patterns of CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/CdS QDs, CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(green) and CdS(blue)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350393&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350399&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21350396&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "另外，在半导体之间形成核/壳结构是提高纳米晶体和量子点LED器件性能的另一种有效方法。重庆大学邱景课题组使用热注入法合成新型的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/CdS核/壳结构量子点，结构如" }, { "name": "xref", "data": { "text": "图8(b)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(b)" } ] } }, { "name": "text", "data": "所示。基于CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/CdS核/壳的倒置量子点LED的电流效率为0.3 cd/A,0.4%的最佳EQE是纯CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的LED的5.4倍。新颖的核壳结构为提高量子点LED的性能提供了一条新路径" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。此外，随着硅基技术的成熟，将 CsPb" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点和Si平台相结合可以为实现大面积光电集成和扩展应用开辟道路。南京大学徐骏课题组制备了基于n型钙钛矿量子点/p-Si异质结的全无机LED，其绿光和红光均能在室温下实现,EL设备具有低开启电压(" }, { "name": "text", "data": "<" }, { "name": "text", "data": "3 V)，并且在交流驱动模式下，热降解及界面缺陷状态下的电荷积累较直流驱动模式下明显减少，从而使发射上升" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。随后，该课题组在n型量子点和p型Si衬底之间插入一个Poly-TPD层，同时用作空穴传输层和电子阻挡层，以实现载流子注入平衡。基于CsPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的LED的EQE为0.91%，与参考器件相比提高了34倍。为了进一步提升效率，在HIL中引入了Au纳米颗粒(Au NPs)，从而使钙钛矿中产生的辐射光与Au NPs激发的局部表面等离激元(LSP)之间可能发生共振，这将导致有效的能量转移。基于CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点器件其输出功率密度从0.6 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "增加到1.2 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，为制备明亮稳定的钙钛矿LED提供了一种新的途径" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "85", "type": "bibr", "rid": "R85", "data": [ { "name": "text", "data": "85" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。钙钛矿量子点LED的EQE接近耦合外效率极限。但是，这些高性能量子点LED在高电流密度下仍然存在效率下降严重的问题。2020年，吉林大学张宇课题组提出了一种在高电流密度下平衡载流子分布并实现高EQE的方法。通过控制配体密度使量子点之间的平均点间距减小，有助于量子点薄膜中的载流子传输，因此电子和空穴在量子点层中具有平衡的分布。增加了辐射复合的比例，使装置的EQE峰值达到12.7%，在500 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的电流密度下，最低EQE下降为11%，这是迄今所有报道的钙钛矿LED中最低的效率下降" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "R86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "除了对量子点本身的修饰以外，对量子点薄膜的改进也是改善钙钛矿量子点LED性能的有效方法，量子点的成膜质量与器件的性能息息相关。目前主要的器件发光层制备方法是溶液法、沉积法等" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。其中溶液法是使用最广泛的方法，由于其操作简单、成本低、成膜均匀致密等优点，在钙钛矿量子点LED的制备过程中被广泛使用。均匀致密的量子点薄膜缺陷更少，有助于更好的载流子传输，减少载流子的损耗，这对于提升钙钛矿量子点LED的性能至关重要，而这也是优化钙钛矿量子点LED的一个有效手段。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本部分主要从钙钛矿活性层和层间能级匹配两方面综述了近年来钙钛矿量子点性能的研究进展。钙钛矿活性层的优化主要有表面配体工程、界面工程、钝化等处理方法，层间能级匹配主要包括能级对准，经过优化，钙钛矿量子点LED的性能得到了明显提高。" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "对钙钛矿量子点LED的性能进行了对比。" 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"目前，钙钛矿LED的发光效率不再是显示应用的障碍，但钙钛量子点LED目前主要仍面临几个方面的挑战。(1)虽然绿光、红光和近红外光钙钛矿量子点LED的EQE已经达到20%以上，但蓝光LED的发展面临较大的挑战" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "87", "type": "bibr", "rid": "R87", "data": [ { "name": "text", "data": "87" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。蓝色发光钙钛矿主要是通过使用氯化物和溴化物的混合来实现的，可以调节它们的量比以在所需的蓝色区域中调节发射颜色。但是，混合的Cl/Br钙钛矿显示出电场诱导的相偏析并降低了光致发光量子效率(PLQE)" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，从而影响LED器件的效率及颜色稳定性。可通过掺杂金属离子或添加剂进行钝化，或利用混合配体原位制备的方法对钙钛矿材料进行尺寸调控，从而产生高效稳定的蓝色发光" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "89", "type": "bibr", "rid": "R89", "data": [ { "name": "text", "data": "89" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "91", "type": "bibr", "rid": "R91", "data": [ { "name": "text", "data": "91" } ] } } ], "rid": [ "R89", "R90", "R91" ], "text": "89-91", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。(2)钙钛矿材料稳定性不佳的问题严重限制了其大规模使用" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "92", "type": "bibr", "rid": "R92", "data": [ { "name": "text", "data": "92" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。钙钛矿量子点容易受到温度、湿度、光照等的影响而发生相变、团聚甚至降解。其中" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "位元素容易被氧化的钙钛矿量子点材料对于环境更加敏感，例如锡基钙钛矿量子点材料在遇到环境侵蚀时,Sn(Ⅱ)极易被氧化成Sn(Ⅳ)，加剧了卤素空位和间隙金属的主要缺陷，进一步加速了钙钛矿结构的坍塌" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "93", "type": "bibr", "rid": "R93", "data": [ { "name": "text", "data": "93" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。长期氧暴露诱导表面陷阱态的形成，并导致永久荧光猝灭使钙钛矿材料变质" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "94", "type": "bibr", "rid": "R94", "data": [ { "name": "text", "data": "94" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "96", "type": "bibr", "rid": "R96", "data": [ { "name": "text", "data": "96" } ] } } ], "rid": [ "R94", "R95", "R96" ], "text": "94-96", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。目前提高钙钛矿LED器件稳定性的方法主要有" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "位离子取代，使用更加稳定的AIP替代OHIP;" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "位离子取代，如使用Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "取代" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "位的Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": ",Mn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "与卤素的结合能远大于Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "，加固了钙钛矿八面体结构从而提高稳定性，离子取代不依赖外部配体或掺杂物质，而从量子点自身结构设计角度出发促进量子点抵御环境侵蚀的能力;从外部结构上可以通过封装有机聚合物或构建超疏水结构来增强钙钛矿的稳定性，有机聚合物在量子点表面形成致密的网络，有效防止环境的侵蚀，构建超疏水结构，可以避免量子点之间相互接触而发生集体的荧光猝灭" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "97", "type": "bibr", "rid": "R97", "data": [ { "name": "text", "data": "97" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "99", "type": "bibr", "rid": "R99", "data": [ { "name": "text", "data": "99" } ] } } ], "rid": [ "R97", "R98", "R99" ], "text": "97-99", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。(3)被广泛研究且性能比较突出的钙钛矿通常存在铅离子，而铅离子是一种对身体有害的重金属离子，其毒性制约了钙钛矿LED的实际应用。为降低或去除毒性，可使用Sn、Mn、Bi、Sb等毒性更小的元素做Pb的替代元素，如通过异价Sb替代和晶体演变，获得新型无机Sb基钙钛矿单晶。通过阱型能带结构设计及Sb基钙钛矿量子点本征的高激子结合能，获得荧光量子产率达到46%的Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Sb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": "的量子点材料，用于制备无毒的照明显示器件" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "100", "type": "bibr", "rid": "R100", "data": [ { "name": "text", "data": "100" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "104", "type": "bibr", "rid": "R104", "data": [ { "name": "text", "data": "104" } ] } } ], "rid": [ "R100", "R101", "R102", "R103", "R104" ], "text": "100-104", "type": "bibr" } }, { "name": "text", 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