微量MgO掺杂对GAGG：Ce晶体光学和闪烁性能的影响

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "微量MgO掺杂对GAGG：Ce晶体光学和闪烁性能的影响" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "祁", "givenname": "强", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "QI", "givenname": "Qiang", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" }, { "rid": "aff3", "text": "3" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "祁强(1993-), 男, 河南信阳人, 硕士硕究生, 2018年于许昌学院获得学士学位, 主要从事Gd3(Ga, Al)5O12:Ce晶体生长与慢分量抑制的研究。E-mail:182442559@st.usst.edu.cn" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "祁强" } ] }, { "name": "text", "data": "(1993-), 男, 河南信阳人, 硕士硕究生, 2018年于许昌学院获得学士学位, 主要从事Gd" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(Ga, Al)" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": ":Ce晶体生长与慢分量抑制的研究。E-mail:" }, { "name": "text", "data": "182442559@st.usst.edu.cn" } ] ] } ], "email": "182442559@st.usst.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "孟", "givenname": "猛", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "MENG", "givenname": "Meng", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" }, { "rid": "aff3", "text": "3" }, { "rid": "aff4", "text": "4" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "丁", "givenname": "栋舟", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "DING", "givenname": "Dong-zhou", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" }, { "rid": "aff3", "text": "3" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "DING Dong-zhou, E-mail:dongzhou_ding@mail.sic.ac.cn", "data": [ { "name": "text", "data": "DING Dong-zhou, E-mail:dongzhou_ding@mail.sic.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "丁栋舟(1976-), 男, 安徽安庆人, 博士, 正高级工程师, 2014年于中国科学院大学获得博士学位, 主要从事性能稀土氧化物闪烁晶体的制备、结构、性能及器件应用的研究。E-mail:dongzhou_ding@mail.sic.ac.cn" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "丁栋舟" } ] }, { "name": "text", "data": "(1976-), 男, 安徽安庆人, 博士, 正高级工程师, 2014年于中国科学院大学获得博士学位, 主要从事性能稀土氧化物闪烁晶体的制备、结构、性能及器件应用的研究。E-mail:" }, { "name": "text", "data": "dongzhou_ding@mail.sic.ac.cn" } ] ] } ], "email": "dongzhou_ding@mail.sic.ac.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "赵", "givenname": "书文", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHAO", "givenname": "Shu-wen", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" }, { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "施", "givenname": "俊杰", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SHI", "givenname": "Jun-jie", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" }, { "rid": "aff3", "text": "3" }, { "rid": "aff5", "text": "5" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "任", "givenname": "国浩", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "REN", "givenname": "Guo-hao", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" }, { "rid": "aff3", "text": "3" }, { "rid": "aff5", "text": "5" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "上海理工大学 材料科学与工程学院, 上海 200093", "data": [ { "name": "text", "data": "上海理工大学 材料科学与工程学院, 上海 200093" } ] }, { "lang": "en", "label": "1", "text": "School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China", "data": [ { "name": "text", "data": "School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院 上海硅酸盐研究所, 上海 201899", "data": [ { "name": "text", "data": "中国科学院 上海硅酸盐研究所, 上海 201899" } ] }, { "lang": "en", "label": "2", "text": "Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China", "data": [ { "name": "text", "data": "Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "中国科学院大学 材料与光电研究中心, 北京 100049", "data": [ { "name": "text", "data": "中国科学院大学 材料与光电研究中心, 北京 100049" } ] }, { "lang": "en", "label": "3", "text": "Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China", "data": [ { "name": "text", "data": "Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China" } ] } ] }, { "id": "aff4", "intro": [ { "lang": "zh", "label": "4", "text": "南京航空航天大学 航天学院, 江苏 南京 210016", "data": [ { "name": "text", "data": "南京航空航天大学 航天学院, 江苏 南京 210016" } ] }, { "lang": "en", "label": "4", "text": "College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China", "data": [ { "name": "text", "data": "College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China" } ] } ] }, { "id": "aff5", "intro": [ { "lang": "zh", "label": "5", "text": "中国科学院 海西创新研究院, 福建 福州 350002", "data": [ { "name": "text", "data": "中国科学院 海西创新研究院, 福建 福州 350002" } ] }, { "lang": "en", "label": "5", "text": "Fujian Institute of Innovation, Chinese Academy of Sciences, Fujian 350002, China", "data": [ { "name": "text", "data": "Fujian Institute of Innovation, Chinese Academy of Sciences, Fujian 350002, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "共掺杂离子是优化晶体闪烁性能的重要手段之一，本文采用提拉法生长了GAGG：Ce和GAGG：Ce，0.1% Mg晶体。通过测试硬度、透过率、X射线激发发射（XEL）谱和符合时间分辨率等方法研究了微量MgO掺杂对GAGG：Ce光学及闪烁性能的影响。GAGG：Ce和GAGG：Ce，Mg的维氏硬度平均值分别为1 430 kg/mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和1 420.4 kg/mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，表明Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的掺杂几乎没有对GAGG：Ce的硬度产生影响。XEL谱结果表明，共掺杂Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "后GAGG：Ce晶体的发光峰值波长约为540 nm，但5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": "及5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": "发射峰红移了12~24 nm，Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的引入可能改变了Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "激发态向" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": "和" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": "跃迁几率分布。通过共掺杂Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "，发现尽管光产额由5.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV（58 000 ph/MeV）降低为4.15×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV（41 500 ph/MeV），但GAGG：Ce，Mg符合时间分辨率得到了显著改善，达146 ps。此外，比较不同尺寸样品的光产额，发现GAGG：Ce，Mg对闪烁发光的自吸收程度小于GAGG：Ce。以上结果表明，微量MgO掺杂是优化GAGG：Ce晶体闪烁性能的有效途径。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Ions' co-doping is one of the important means to optimize crystals' scintillation properties. In this work, GAGG:Ce and GAGG:Ce, 0.1%Mg crystals were grown by Czochralski method. The effects of trace MgO on the optical and scintillation properties of GAGG:Ce were studied by measuring hardness, transmittance, X-ray excited luminescence(XEL) spectrum and time resolution. The average Vickers hardness of GAGG:Ce and GAGG:Ce, Mg is 1 430 kg/mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " and 1 420.4 kg/mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " respectively, which indicates that Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " doping has little effect on the hardness of GAGG:Ce. Photoluminescence(PL) and XEL spectra show that the emission peak wavelength of GAGG:Ce and GAGG:Ce, Mg crystals is~540 nm. By Gaussian fitting the XEL spectrum, the emission peaks of 5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": " and 5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": " of GAGG:Ce, Mg are red-shifted 12~24 nm relative to GAGG:Ce, and the introduction of Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": " may change the transition probability distribution of Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": " from 5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": " excited state to" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": " and" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": ". The light yields of GAGG:Ce and GAGG:Ce, Mg are 5.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV(58 000 ph/MeV) and 4.15×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV(41 500 ph/MeV), respectively, but the coincidence time resolution of GAGG:Ce, Mg is significantly improved, up to 146 ps. In addition, comparing the light yield of samples of different sizes, the self-absorption degree of GAGG:Ce, Mg for scintillation luminescence is less than that of GAGG:Ce. The above results indicate that trace MgO doping is an effective way to improve the scintillation performance of GAGG:Ce crystals." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "镓铝酸钆石榴石" } ], [ { "name": "text", "data": "共掺杂" } ], [ { "name": "text", "data": "光产额" } ], [ { "name": "text", "data": "时间分辨率" } ], [ { "name": "text", "data": "闪烁性能" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "gallium aluminum gadolinium garnet" } ], [ { "name": "text", "data": "co-doping" } ], [ { "name": "text", "data": "light yield" } ], [ { "name": "text", "data": "time resolution" } ], [ { "name": "text", "data": "scintillation property" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "闪烁体是一种将高能射线(X射线、γ射线)或高能粒子(α粒子、β粒子等)能量转换为紫外-可见荧光脉冲的能量转化介质，已被广泛应用于高能物理、核医学成像、安全检查、无损探伤、地质勘探和环境监测等领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "b1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。铈离子掺杂的镓铝酸钆石榴石晶体(简称GAGG:Ce)具有光产额高(最高可达(7.4±0.74)×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV((7.4±0.74)×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " ph/MeV))" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "b2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、能量分辨率高、衰减快、频谱匹配能力良好、不潮解和无本底辐射等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "b3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "优点，已成为闪烁晶体领域的研究热点。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "GAGG:Ce单晶的生长温度高，导致对生长温度敏感的反格位缺陷的浓度高，而反格位缺陷的存在会引起光产额的降低及闪烁时间性能的恶化。通过适当的离子共掺杂取代来调整基质材料的“能隙工程”和“缺陷工程”，是目前提升石榴石晶体闪烁性能的有效方法之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "b4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "b5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "b4", "b5" ], "text": "4-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着核医学成像技术的发展，为进一步提供精确飞行时间(Time of flight, TOF)信息，要求闪烁体具有快衰减和高光产额" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "b6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Meng等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "b7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过提拉法生长了Ca浓度为0.1%~0.4%的GAGG:Ce晶体，随着Ca浓度的增加，衰减时间得到改善。Wang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "b8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在GLuGAG:Ce陶瓷中加入Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "，有效地加速了GLuGAG:Ce陶瓷的闪烁衰减，但以牺牲光产额为代价。目前，Kamada等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "对Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺杂的GAGG:Ce开展了广泛研究，时间分辨率最快可达到166 ps；但是，对于Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺杂对GAGG:Ce晶体透过率、自吸收及发光中心激发态的退激发跃迁几率等尚缺乏系统的研究。国内对GAGG:Ce, Mg的研究则主要集中在陶瓷方面，对于晶体的研究未见报道。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "GAGG:Ce晶体中Ce离子的有效分凝系数低至0.4" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "b10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，且晶体生长时Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "存在挥发" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "b11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，组分易偏析、晶体易开裂，且生长大尺寸、高品质的晶体较难。经晶体生长工艺优化，本文生长了GAGG:Ce和GAGG:Ce, Mg晶体，并着重对比分析了微量Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "添加对GAGG:Ce晶体光学和闪烁性能的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "样品制备" } ], "level": "2", "id": "s2-1" } }, { "name": "p", "data": [ { "name": "text", "data": "晶体生长所用原料Gd" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、CeO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、MgO纯度均为99.99%。将原料分别置于马弗炉中，在800 ℃下煅烧12 h，以去除原料中的部分杂质和水分。按化学计量式Ce" }, { "name": "sub", "data": [ { "name": "text", "data": "0.03" } ] }, { "name": "text", "data": "Gd" }, { "name": "sub", "data": [ { "name": "text", "data": "2.97" } ] }, { "name": "text", "data": "-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2.3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2.7" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "和Ce" }, { "name": "sub", "data": [ { "name": "text", "data": "0.03" } ] }, { "name": "text", "data": "Mg" }, { "name": "sub", "data": [ { "name": "text", "data": "0.003" } ] }, { "name": "text", "data": "Gd" }, { "name": "sub", "data": [ { "name": "text", "data": "2.967" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2.3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2.7" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "配料，原料混合均匀后采用冷等静压压制成块。晶体生长采用中频感应加热提拉法，所用铱坩埚大小为" }, { "name": "italic", "data": [ { "name": "text", "data": "ϕ" } ] }, { "name": "text", "data": "120 mm×120 mm，中频频率约为8 kHz。晶体生长过程中，拉速为0.5~2 mm/h，转速为5~13 r/min，生长气氛采用高纯的氮氧混合气体，氧气含量体积分数为5%。晶体生长经过升温、接种、放肩、等径生长、收尾和降温过程，最终生长出GAGG:Ce和GAGG:Ce, Mg晶体，晶体光学质量良好、无肉眼可见明显的宏观缺陷(" }, { "name": "xref", "data": { "text": "图 1", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1" } ] } }, { "name": "text", "data": ")。从所得晶体中切出尺寸分别为2 mm×2 mm×3 mm、2 mm×2 mm×10 mm、10 mm×10 mm×2 mm、10 mm×10 mm×10 mm、30 mm×15 mm×10 mm的样品，六面抛光后分别用于透过率、X射线激发发射(XEL)谱、多道能谱及时间分辨率等测试。" } ] }, { "name": "fig", "data": { "id": "Figure1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "晶体照片。(a) GAGG:Ce；(b) GAGG:Ce, Mg。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 1" } ], "title": [ { "name": "text", "data": "Crystal photo of GAGG:Ce(a) and GAGG:Ce, Mg(b)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225750&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225750&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225750&type=middle" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "样品表征" } ], "level": "2", "id": "s2-2" } }, { "name": "p", "data": [ { "name": "text", "data": "采用日本Rigaku公司生产的D/MAX-22550V型X射线衍射仪对晶体进行物相分析，测试条件为：Cu-Kα射线，电压和电流分别为40 kV和40 mA，扫面范围为10°~80°，扫描速度5(°)/min。采用HVS-5Z/LCD型数字式维氏硬度计测试样品维氏硬度，加载的压力为0.3 kg，保持15 s测试。晶体透过率通过日立公司生产的U-3900H型紫外分光光度计进行表征，测试波长范围为200~800 nm，扫描速度600 nm/min，狭缝宽度2 nm。采用Perkin-Elmer LS55型荧光光谱仪表征晶体的光致发光谱(PL)，激发波长为450 nm，测试波长范围为470~870 nm。用上海硅酸盐研究所自主搭建的X射线激发光谱仪测试样品的XEL谱，X射线管的电压为50 kV，电流为20 mA。采用美国ORTEC公司生产的digiBASE型多道能谱仪对晶体光输出及能量分辨率进行表征，光电倍增管(R878型)与晶体间采用空气耦合，除耦合面以外其余晶体表面包覆有反射层(Enhanced specular reflector, ESR)，采用能量为662 keV的γ射线激发(" }, { "name": "sup", "data": [ { "name": "text", "data": "137" } ] }, { "name": "text", "data": "Cs放射源)样品，电压为－1 000 V，时间门宽分别为0.75 μs和2.00 μs。通过模拟衰减器连接到CAEN数字转换器DT5720A的Hamamatsu R2059 PMT，表征晶体的光产额，采用" }, { "name": "sup", "data": [ { "name": "text", "data": "137" } ] }, { "name": "text", "data": "Cs作为放射源，积分时间1.5 μs。衰减时间在上海硅酸盐研究所自主搭建的设备上进行测试，" }, { "name": "sup", "data": [ { "name": "text", "data": "137" } ] }, { "name": "text", "data": "Cs为放射源，光电倍增管型号为Hamatsu R6231-100。符合时间分辨率(Coincidence time resolution, CTR)测试通过折射率" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "=1.41的光学油脂层耦合到HPK 13360 3050PE硅光电倍增管(SiPM)，两个SiPM的信号被分成两部分，一部分输入放大器，用于测量沉积的能量(光峰谱)，另一部分输入NINO芯片以获得事件时间戳。仅选择光峰事件(511 keV)来确定CTR，并且用已知时间分辨率的参考晶体LYSO(尺寸为2 mm×2 mm×3 mm)校正结果值。PL谱、光产额和CTR在欧洲核子研究中心(CERN, EP_CMX group)测试，数据误差为5%。所有测试均在室温下进行。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图 1", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1" } ] } }, { "name": "text", "data": "为生长的GAGG:Ce和GAGG:Ce, Mg晶体毛坯，尺寸分别为" }, { "name": "italic", "data": [ { "name": "text", "data": "ϕ" } ] }, { "name": "text", "data": "53 mm×230 mm、" }, { "name": "italic", "data": [ { "name": "text", "data": "ϕ" } ] }, { "name": "text", "data": "31.5 mm×85 mm。晶体呈黄色，表面光滑透明，完整。切开晶体后，内部通透，用300 mW绿光激光照射，没有发现明显的宏观缺陷，晶体质量良好。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "X射线衍射晶体结构分析" } ], "level": "2", "id": "s3-1" } }, { "name": "p", "data": [ { "name": "text", "data": "GAGG:Ce和GAGG:Ce, Mg晶体研磨成粉末后测试的XRD谱如" }, { "name": "xref", "data": { "text": "图 2", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2" } ] } }, { "name": "text", "data": "所示。所有样品的XRD图谱都能与Gd" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "的标准PDF卡片#46-0448中的衍射峰一一对应，说明微量MgO共掺杂没有改变晶体结构且未引入杂相。" } ] }, { "name": "fig", "data": { "id": "Figure2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "GAGG:Ce和GAGG:Ce, Mg样品的粉末XRD图谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 2" } ], "title": [ { "name": "text", "data": "Powder X-ray diffraction pattern of GAGG:Ce and GAGG:Ce, Mg sample" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225751&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225751&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225751&type=middle" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "硬度分析" } ], "level": "2", "id": "s3-2" } }, { "name": "p", "data": [ { "name": "text", "data": "硬度是衡量材料机械加工性能好坏的重要指标，测试硬度可以为后续晶体加工和实际使用提供有益的数据参考。硬度取决于离子的排列及其间的结合力，它随着微结构的改变而变化。维氏硬度具有较高精度、高重复性、测量范围宽广的特点，因此被用于GAGG:Ce晶体机械硬度的表征。每个晶面上随机选取5个不同测试点来测试其维氏硬度，如" }, { "name": "xref", "data": { "text": "表 1", "type": "table", "rid": "Table1", "data": [ { "name": "text", "data": "表 1" } ] } }, { "name": "text", "data": "所示。GAGG:Ce和GAGG:Ce, Mg的维氏硬度平均值分别为1 430 kg/mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和1 420.4 kg/mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，即GAGG:Ce的硬度略微大于GAGG:Ce, Mg，表明掺杂Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "未对GAGG:Ce的硬度产生较大影响。" } ] }, { "name": "table", "data": { "id": "Table1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "GAGG:Ce和GAGG:Ce, Mg样品的维氏硬度" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 1" } ], "title": [ { "name": "text", "data": "Vickers hardness of GAGG:Ce and GAGG:Ce, Mg samples " }, { "name": "text", "data": "kg·mm-2" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Sample" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "1" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "2" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "3" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "4" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "5" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Mean" } ] } ] ], "body": [ [ { "align": "left", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "GAGG:Ce" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "1 358" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "1 454" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "1 429" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "1 480" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "1 429" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "1 430" } ] } ], [ { "align": "left", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "GAGG:Ce, Mg" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "1 480" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "1 454" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "1 405" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "1 405" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "1 328" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "1 420.4" } ] } ] ], "foot": [] } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "透过光谱分析" } ], "level": "2", "id": "s3-3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图 3(a)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(a)" } ] } }, { "name": "text", "data": "为GAGG:Ce和GAGG:Ce, Mg晶体在200~800 nm的透过率曲线，尺寸为10 mm×10 mm×10 mm。该波段范围内主要的吸收带分别位于~350 nm和~450 nm，分别对应于Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的4f→5d" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和4f→5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "跃迁" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "b12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由于Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的5d电子态无外层电子屏蔽，受晶场影响较大，因此其吸收带较宽" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "b13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在540 nm处，GAGG:Ce透过率为76.5%，GAGG:Ce, Mg的透过率为80.4%，略高于GAGG:Ce。文献[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "b8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]报道，GLuGAG:Ce和GLuGAG:Ce, Mg陶瓷在大于540 nm波段透过率约为80%，可以添加多达0.3%的Mg，而不会明显降低光学陶瓷的透明度。在发射峰值波长535 nm附近，GAGG:Ce和GAGG:Ce, Mg晶体的透过率约为82%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，高于本文，这可能是由于本GAGG:Ce测试样品中存在裂纹以及表面抛光质量存在差异造成光的散射程度不同所导致的。" } ] }, { "name": "fig", "data": { "id": "Figure3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "(a) GAGG:Ce和GAGG:Ce, Mg样品的透过谱；(b)不同厚度的GAGG:Ce, Mg样品透过谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 3" } ], "title": [ { "name": "text", "data": "(a)Transmission spectra of GAGG:Ce and GAGG:Ce, Mg samples. (b)Transmittance spectra of GAGG:Ce, Mg samples with different thickness." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225752&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225752&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225752&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为探究GAGG:Ce, Mg的自吸收，进一步测量了不同厚度GAGG:Ce, Mg晶体的透过谱。" }, { "name": "xref", "data": { "text": "图 3(b)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(b)" } ] } }, { "name": "text", "data": "是样品尺寸为10 mm×10 mm×2 mm和30 mm×15 mm×10 mm的GAGG:Ce, Mg样品透过率曲线，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "为测试光束通过晶体的厚度。从图中看出，不同厚度样品在350 nm和450 nm处吸收峰位置及峰形完全一致。此外，位于270 nm和310 nm处的小吸收峰分别是由Gd" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": "→ " }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "I" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "J" } ] } ] }, { "name": "text", "data": "和" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "P" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "J" } ] } ] }, { "name": "text", "data": "跃迁引起的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "b15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着样品厚度的增加，沿光路方向Gd" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "离子数增多，导致该吸收峰增强。在540 nm处，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "为2，10，15，30 mm，样品的透过率值分别为81%、80.1%、79.8%、78.6%；样品厚度分别增加了4倍、6.5倍、14倍，对应的透过率值降低了1.11%、1.48%、2.96%。" }, { "name": "xref", "data": { "text": "图 3(b)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(b)" } ] } }, { "name": "text", "data": "显示，随着样品厚度的增加，在385 nm处峰的半高全宽分别为44.15，21.28，17.49，12.72 nm，吸收边明显红移，说明自吸收随厚度增加而增强。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "光致发光光谱及X射线激发发射谱分析" } ], "level": "2", "id": "s3-4" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图 4", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4" } ] } }, { "name": "text", "data": "为样品的光致发光光谱，" }, { "name": "xref", "data": { "text": "图 4(a)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(a)" } ] } }, { "name": "text", "data": "为归一化后的光谱，" }, { "name": "xref", "data": { "text": "图 4(b)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(b)" } ] } }, { "name": "text", "data": "为短波长端放大图谱。从" }, { "name": "xref", "data": { "text": "图 4(a)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(a)" } ] } }, { "name": "text", "data": "中可以看出，各样品的PL发射带均位于470~750 nm之间，对应于Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→4f跃迁" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "b16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，且样品的发射峰位于540 nm左右。" }, { "name": "xref", "data": { "text": "图 4(b)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(b)" } ] } }, { "name": "text", "data": "中，GAGG: Ce和GAGG:Ce, Mg尺寸为2 mm×2 mm×10 mm和10 mm×10 mm×10 mm的样品相较于2 mm×2 mm×3 mm的样品，短波长一侧均出现红移，这可能是由晶体的自吸收造成的。" } ] }, { "name": "fig", "data": { "id": "Figure4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "(a) 样品的光致发光光谱；(b)样品的短波长端光致发光光谱放大。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 4" } ], "title": [ { "name": "text", "data": "(a)Photoluminescence spectra of the sample. (b)Zoom of photoluminescence spectra of the sample on the short-wavelengths end." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225753&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225753&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225753&type=middle" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图 5(a)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(a)" } ] } }, { "name": "text", "data": "为GAGG:Ce与GAGG:Ce, Mg的XEL谱，样品尺寸为10 mm×10 mm×10 mm。可见光波段发射峰波长~540 nm，由两个常见的跃迁5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→4f(" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": ")和5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→4f(" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": ")组成" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "b17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该发射峰的短波截止边为~480 nm，与4f→5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "跃迁对应的吸收峰重叠小，表明GAGG:Ce晶体的自吸收程度较小，因此其光产额受晶体尺寸影响小" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "b13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该发射峰与Si基光电二极管的接收波长匹配良好，有较高的量子效率，符合新型光电探测器对闪烁体发光波长灵敏度匹配的要求" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "b18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。GAGG:Ce和GAGG:Ce, Mg的XEL谱具有相同的发射峰位置和形状，但GAGG:Ce, Mg的峰值强度相对GAGG:Ce降低了56%。Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "共掺杂降低了Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的发射强度，这是由于引入Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "，电荷补偿效应使Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "转变成稳定的Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "，减少了Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "活性中心的数量。" } ] }, { "name": "fig", "data": { "id": "Figure5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "(a) GAGG:Ce和GAGG:Ce, Mg样品的XEL谱；(b)~(c)XEL谱的Gaussian拟合。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 5" } ], "title": [ { "name": "text", "data": "(a)XEL spectra of GAGG:Ce and GAGG:Ce, Mg samples. (b)－(c)Gaussian fitting of XEL spectra." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225756&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225756&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225756&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "通过对XEL谱进行高斯函数(Gaussian)拟合，以进一步研究分析Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "对晶体发光峰位的影响，如" }, { "name": "xref", "data": { "text": "图 5(b)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(b)" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "5(c)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "5(c)" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "表 2", "type": "table", "rid": "Table2", "data": [ { "name": "text", "data": "表 2" } ] } }, { "name": "text", "data": "列出了样品高斯函数拟合Peak1与Peak2结果。从" }, { "name": "xref", "data": { "text": "表 2", "type": "table", "rid": "Table2", "data": [ { "name": "text", "data": "表 2" } ] } }, { "name": "text", "data": "中可以看出，GAGG:Ce中两个子发射峰分别位于2.32 eV(535 nm)与2.14 eV(580 nm)，两峰积分面积比为2.51；GAGG:Ce, Mg的发射峰可拟合为2.26 eV(547 nm)与2.05 eV(604 nm)，两峰积分面积之比为0.85。其中，位于535 nm与547 nm附近的发射峰对应于Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的激发态5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "能级向基态" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": "的辐射跃迁；位于580 nm与604 nm附近的发射峰对应于Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的激发态5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "能级向基态" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": "的辐射跃迁。根据以上结果可知，GAGG:Ce, Mg相比于GAGG:Ce，其5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": "及5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→ " }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": "发射峰分别红移12 nm和24 nm；且GAGG:Ce和GAGG:Ce, Mg的" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": "与" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": "能级差分别为1 452 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和1 694 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。结合PL谱(" }, { "name": "xref", "data": { "text": "图 4(a)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(a)" } ] } }, { "name": "text", "data": ")和XEL谱(" }, { "name": "xref", "data": { "text": "图 5(a)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(a)" } ] } }, { "name": "text", "data": ")，GAGG:Ce的发射峰为540 nm，Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的引入对GAGG:Ce基质的发射峰位置没有影响；然而，通过Gaussian拟合GAGG:Ce和GAGG:Ce, Mg晶体的XEL谱后(" }, { "name": "xref", "data": { "text": "图 5(b)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(b)" } ] } }, { "name": "text", "data": "、" }, { "name": "xref", "data": { "text": "(c)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "(c)" } ] } }, { "name": "text", "data": ")，Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的引入对GAGG:Ce的发射峰位置产生了红移，可知Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的引入对GAGG:Ce发光中心铈离子的发射峰位置影响小，需要借助Gaussian拟合才能看出。红移的原因可能是由于Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的引入，Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "的绝对浓度增加，Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "的吸收是由于电荷转移O" }, { "name": "sup", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "text", "data": "→Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "，其位置与Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "相比较，通常位于长波区" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "b19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "b21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "b19", "b20", "b21" ], "text": "19-21", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；同时，两发射峰积分面积比变化说明Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的引入改变了Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "激发态向" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": "和" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": "跃迁几率分布，使Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的激发态电子5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→ " }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": "能级跃迁的量子效率远大于5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": "能级跃迁。孙等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "b22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在Ce:Li" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Lu" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Sc" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "(BO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "闪烁体(0≤" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "≤0.30)XEL的Gaussian拟合中有同样的发现。" } ] }, { "name": "table", "data": { "id": "Table2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "GAGG:Ce和GAGG:Ce, Mg样品XEL谱的Gaussian拟合数据" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 2" } ], "title": [ { "name": "text", "data": "XEL spectral Gaussian fitting data of GAGG:Ce and GAGG:Ce, Mg samples" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Sample" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Peak1/nm" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Peak2/nm" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Ratio(Peak2/Peak1)" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " " } ] } ] ], "body": [ [ { "align": "left", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "GAGG:Ce" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "535" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "580" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "2.51" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "0.99" } ] } ], [ { "align": "left", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "GAGG:Ce, Mg" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "547" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "604" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "0.85" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "0.99" } ] } ] ], "foot": [] } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.4" } ], "title": [ { "name": "text", "data": "闪烁特性" } ], "level": "2", "id": "s3-5" } }, { "name": "p", "data": [ { "name": "text", "data": "光产额是表征闪烁晶体性能的重要参数。" }, { "name": "xref", "data": { "text": "图 6", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6" } ] } }, { "name": "text", "data": "为2 mm×2 mm×3 mm样品在662 keV(" }, { "name": "sup", "data": [ { "name": "text", "data": "137" } ] }, { "name": "text", "data": "Cs)的γ射线激发下的多道能谱。" }, { "name": "xref", "data": { "text": "表 3", "type": "table", "rid": "Table3", "data": [ { "name": "text", "data": "表 3" } ] } }, { "name": "text", "data": "列出了对应的测试结果。" }, { "name": "xref", "data": { "text": "表 3", "type": "table", "rid": "Table3", "data": [ { "name": "text", "data": "表 3" } ] } }, { "name": "text", "data": "中比值(Ratio)为同一样品在成形时间(Shaping time)分别为0.75 μs及2 μs下全能峰峰位Peak(光输出)的比值。2 mm×2 mm×10 mm的GAGG:Ce与GAGG:Ce, Mg能量分辨率分别为6.18%@662 keV、7.18%@662 keV(成形时间2.0 μs)，可以看出引入Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "后晶体的能量分辨率略有变差。本实验所得晶体能量分辨率均优于文献报道的GAGG:Ce, 0.1%Mg能量分辨率7.6%@662 keV(2 mm×2 mm×10 mm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "以及9.5%@662 keV(5 mm×5 mm×5 mm)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "b15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着成形时间从0.75 μs增加到2.00 μs，GAGG:Ce样品在3种尺寸对应的全能峰道数值增加的幅度均比GAGG:Ce, Mg多2%，因此GAGG:Ce, Mg样品的比值全部大于GAGG:Ce。以上结果初步表明GAGG:Ce, Mg闪烁发光中的快分量占比高于GAGG:Ce，衰减时间有所加快。" } ] }, { "name": "fig", "data": { "id": "Figure6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "2 mm×2 mm×3 mm样品的多道能谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 6" } ], "title": [ { "name": "text", "data": "Multi-channel energy spectra of 2 mm×2 mm×3 mm samples" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225760&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225760&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225760&type=middle" } ] } }, { "name": "table", "data": { "id": "Table3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表3" } ], "title": [ { "name": "text", "data": "GAGG晶体样品的光输出及能量分辨率" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 3" } ], "title": [ { "name": "text", "data": "Light output and energy resolution of GAGG crystal samples" } ] } ], "note": [], "table": [ { "head": [ [ { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Size" } ] }, { "rowspan": "2", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Shaping time/μs" } ] }, { "colspan": "3", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "GAGG:Ce" } ] }, { "align": "center", "style": "class:table_top_border", "data": [] }, { "colspan": "3", "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "GAGG:Ce, Mg" } ] } ], [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Peak" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Ratio" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "E.R" } ] }, { "data": [] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Peak" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "Ratio" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "E.R" } ] } ] ], "body": [ [ { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "2 mm×2 mm×3 mm" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "0.75" }, { "name": "text", "data": "" }, { "name": "text", "data": "2.00" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "643" }, { "name": "text", "data": "" }, { "name": "text", "data": "757" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "84.94%" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "6.59%" }, { "name": "text", "data": "" }, { "name": "text", "data": "6.18%" } ] }, { "rowspan": "3", "style": "class:table_top_border2 table_bottom_border", "data": [] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "517" }, { "name": "text", "data": "" }, { "name": "text", "data": "594" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "87.04%" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "7.13%" }, { "name": "text", "data": "" }, { "name": "text", "data": "7.18%" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "2 mm×2 mm×10 mm" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.75" }, { "name": "text", "data": "" }, { "name": "text", "data": "2.00" } ] }, { "align": "center", "data": [ { "name": "text", "data": "576" }, { "name": "text", "data": "" }, { "name": "text", "data": "678" } ] }, { "align": "center", "data": [ { "name": "text", "data": "84.96%" } ] }, { "align": "center", "data": [ { "name": "text", "data": "6.09%" }, { "name": "text", "data": "" }, { "name": "text", "data": "6.69%" } ] }, { "align": "center", "data": [ { "name": "text", "data": "488" }, { "name": "text", "data": "" }, { "name": "text", "data": "569" } ] }, { "align": "center", "data": [ { "name": "text", "data": "85.76%" } ] }, { "align": "center", "data": [ { "name": "text", "data": "6.92%" }, { "name": "text", "data": "" }, { "name": "text", "data": "7.02%" } ] } ], [ { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "10 mm×10 mm×10 mm" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "0.75" }, { "name": "text", "data": "" }, { "name": "text", "data": "2.00" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "541" }, { "name": "text", "data": "" }, { "name": "text", "data": "644" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "84.01%" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "6.47%" }, { "name": "text", "data": "" }, { "name": "text", "data": "6.20%" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "450" }, { "name": "text", "data": "" }, { "name": "text", "data": "524" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "85.88%" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "7.06%" }, { "name": "text", "data": "" }, { "name": "text", "data": "6.91%" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "表 4", "type": "table", "rid": "Table4", "data": [ { "name": "text", "data": "表 4" } ] } }, { "name": "text", "data": "列出了样品的光产额，GAGG:Ce和GAGG:Ce, Mg的光产额分别高达5.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV(58 000 ph/MeV)和4.15×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV(41 500 ph/MeV)。尺寸为2 mm×2 mm×3 mm和2 mm×2 mm×10 mm的GAGG:Ce, Mg相较于GAGG:Ce，其光产额分别降低了28.4%和26.3%。Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂引入的缺陷会捕获陷于浅电子陷阱中的电子，浅电子陷阱中的电子与价带顶自由空穴无辐射复合，降低了GAGG:Ce的发光强度，进而降低光产额" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "b23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着样品尺寸的增大，晶体的光产额有所下降，晶体自吸收是造成这一现象的根本原因。随样品尺寸增大，GAGG:Ce, Mg光产额降低的幅度小于GAGG:Ce，这可能是由于GAGG:Ce, Mg在发光波长区间具有相对更高的透过率(" }, { "name": "xref", "data": { "text": "图 3(a)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(a)" } ] } }, { "name": "text", "data": ")、自吸收程度小于GAGG:Ce所致。虽然引入Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "后GAGG:Ce, Mg晶体的光产额降低了一些，但2 mm×2 mm×10 mm样品的光产额仍高达3.05×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV(30 500 ph/MeV)，高于相同尺寸LYSO:Ce晶体的1.9×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV(19 000 ph/MeV)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "b24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，表现出优异的光产额性能。" } ] }, { "name": "table", "data": { "id": "Table4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表4" } ], "title": [ { "name": "text", "data": "2 mm×2 mm×3 mm和2 mm×2 mm×10 mm样品的光产额" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 4" } ], "title": [ { "name": "text", "data": "Light yield of 2 mm×2 mm×3 mm and 2 mm×2 mm×10 mm samples " }, { "name": "text", "data": "lx·MeV-1(ph·MeV-1)" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Sample" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "2 mm×2 mm×3 mm" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "2 mm×2 mm×10 mm" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Ratio between sizes" } ] } ] ], "body": [ [ { "align": "left", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "GAGG:Ce" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "5.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "(58 000)" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "4.14×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "(41 400)" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "0.714" } ] } ], [ { "align": "left", "data": [ { "name": "text", "data": "GAGG:Ce, Mg" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.15×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "(41 500)" } ] }, { "align": "center", "data": [ { "name": "text", "data": "3.05×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": "(30 500)" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.735" } ] } ], [ { "align": "left", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "Ratio LY" }, { "name": "sub", "data": [ { "name": "text", "data": "Ce, Mg/Ce" } ] } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "0.716" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "0.737" } ] }, { "style": "class:table_bottom_border", "data": [] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图 7", "type": "fig", "rid": "Figure7", "data": [ { "name": "text", "data": "图 7" } ] } }, { "name": "text", "data": "为在" }, { "name": "sup", "data": [ { "name": "text", "data": "137" } ] }, { "name": "text", "data": "Cs(662 keV)激发下，GAGG:Ce和GAGG:Ce, Mg晶体的闪烁衰减时间曲线，样品尺寸为2 mm×2 mm×3 mm。对衰减曲线采用双指数方程" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "+" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "exp(-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": ")+" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "exp(-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")进行拟合，从而获得衰减时间分量。经拟合发现GAGG:Ce闪烁衰减时间快慢分量及其占比分别为126 ns(81.4%)及625 ns(18.6%)；GAGG:Ce, Mg闪烁衰减时间快慢分量及其占比则分别为89 ns(51.3%)和295 ns(48.7%)。从" }, { "name": "xref", "data": { "text": "表 5", "type": "table", "rid": "Table5", "data": [ { "name": "text", "data": "表 5" } ] } }, { "name": "text", "data": "中可以看出，GAGG:Ce的CTR为273 ps，而GAGG:Ce, Mg的CTR大为改善达146 ps。文献报道的GAGG:Ce, 0.1%Mg，2 mm×2 mm×10 mm样品的衰减时间73 ns(71%)、275 ns(29%)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；5 mm×5 mm×5 mm样品的衰减时间47 ns(83%)、174 ns (17%)；时间分辨率为310 ps" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "b15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。文献中的晶体在衰减时间方面优于本实验，但时间分辨率本实验更胜一筹，测试结果可能与晶体尺寸以及测试方法有关。Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂后的GAGG:Ce, Mg晶体相较于GAGG:Ce晶体衰减时间变快，其原因为Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "与Gd" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的价态不同，由于电荷补偿效应，促使部分Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "转化成Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "，Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "可直接从导带捕获电子后形成激发态的Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "，处于激发态的Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "通过辐射跃迁的方式发光，这个过程比Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "先从价带捕获一个空穴形成Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "、再捕获电子后发光少一个步骤，而且Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "能够降低电子陷阱俘获几率，从而有效缩短衰减时间" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "b4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。基于以上分析，GAGG:Ce, Mg拥有较高光产额(4.15×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV(41 500 ph/MeV))与较好的时间分辨率(146 ps)。" } ] }, { "name": "fig", "data": { "id": "Figure7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "GAGG:Ce和GAGG:Ce, Mg样品的闪烁衰减曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 7" } ], "title": [ { "name": "text", "data": "Scintillation decay curves of the GAGG:Ce and GAGG:Ce, Mg samples" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225763&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225763&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=6225763&type=middle" } ] } }, { "name": "table", "data": { "id": "Table5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表5" } ], "title": [ { "name": "text", "data": "2 mm×2 mm×3 mm样品的符合时间分辨率(CTR)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 5" } ], "title": [ { "name": "text", "data": "Coincidence time resolution(CTR) of 2 mm×2 mm×3 mm samples" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "Sample" } ] }, { "align": "center", "style": "class:table_top_border", "data": [ { "name": "text", "data": "CTR(FWHM)/ps" } ] } ] ], "body": [ [ { "align": "left", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "GAGG:Ce" } ] }, { "align": "center", "style": "class:table_top_border2", "data": [ { "name": "text", "data": "273" } ] } ], [ { "align": "left", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "GAGG:Ce, Mg" } ] }, { "align": "center", "style": "class:table_bottom_border", "data": [ { "name": "text", "data": "146" } ] } ] ], "foot": [] } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用提拉法生长了GAGG:Ce和GAGG:Ce, Mg晶体。晶体无开裂、气泡及包裹物等宏观缺陷。从XRD图谱看出，微量Mg共掺杂没有改变晶体结构且未引入杂相。维氏硬度测试结果表明，Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂未对GAGG:Ce的硬度产生较大影响。GAGG:Ce, Mg晶体的透过率在540 nm为80.4%，接近理论透过率，但吸收边出现一定的红移。GAGG:Ce, Mg的XEL峰值强度相较GAGG:Ce降低了56%，降低的原因在于Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的引入，激活剂Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "依靠电荷补偿效应生成稳定的Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "，降低了Ce" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "的活性中心数量。XEL和PL谱显示GAGG:Ce和GAGG:Ce, Mg晶体的主发射峰波长~540 nm。通过对XEL谱进行Gaussian拟合，发现引入微量的MgO，GAGG:Ce, Mg相对于GAGG:Ce，其5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "5/2" } ] }, { "name": "text", "data": "及5d" }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "→" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "7/2" } ] }, { "name": "text", "data": "子发射峰红移12~24 nm。GAGG:Ce, Mg相比GAGG:Ce光产额约降低28%，降至4.15×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " lx/MeV(41 500 ph/MeV)，但时间分辨率改善了46.5%，达146 ps。表明Mg" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "掺杂的GAGG:Ce作为快衰减闪烁晶体非常具有竞争力，有望用于TOF电离辐射探测器中。通过合适的离子掺杂等方法进一步提升GAGG:Ce晶体的衰减时间和能量分辨率是接下来本实验研究的重点。" } ] } ] } ], "footnote": 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