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Status and Perspectives of Deep Ultraviolet LED Packaging Technology
Luminescence Industry and Technology Frontier | Updated：2021-04-23
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Status and Perspectives of Deep Ultraviolet LED Packaging Technology
- Chinese Journal of Luminescence Vol.42, Issue 4, (2021)
- Affiliations：School of Aerospace Engineering, Huazhong University of Science and Technology,Wuhan,China,430074;School of Mechanical Science and Engineering, Huazhong University of Science and Technology,Wuhan,China,430074;School of Energy and Power Engineering, Huazhong University of Science and Technology,Wuhan,China,430074
- Author bio：
- Funds：National Natural Science Foundation of China(2016YFB0400804);National Key Research and Development Program of China(51805196;51775219)
- DOI：10.37188/CJL.20200394 CLC： TN312.8
Published：01 April 2021，
Received：21 December 2020，
Revised：08 January 2021，
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Cite this article
Yang PENG, Ming-xiang CHEN, Xiao-bing LUO. Status and Perspectives of Deep Ultraviolet LED Packaging Technology. [J]. Chinese Journal of Luminescence 42(4):542-559(2021)
Yang PENG, Ming-xiang CHEN, Xiao-bing LUO. Status and Perspectives of Deep Ultraviolet LED Packaging Technology. [J]. Chinese Journal of Luminescence 42(4):542-559(2021) DOI： 10.37188/CJL.20200394.
Status and Perspectives of Deep Ultraviolet LED Packaging Technology
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"data": "随着大功率白光LED技术日趋成熟，基于Ⅲ族氮化物材料的短波长紫外LED(UV-LED)技术已成为LED领域研发焦点"
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"name": "text",
"data": "。紫外光分为长波紫外(UVA,320400 nm)、中波紫外(UVB,280320 nm)、短波紫外(UVC,200280 nm)和真空紫外(VUV,100200 nm)。通常将发光波长位于长波紫外的LED称为浅紫外LED，发光波长位于中波紫外及其以下的LED称为深紫外LED。近紫外LED主要应用在树脂固化、油墨印刷、防伪识别等领域，深紫外LED在杀菌消毒、生化检测、医疗健康、隐秘通讯等领域具有重要应用价值"
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"name": "text",
"data": "。特别是在杀菌消毒领域，深紫外LED主要利用高能量紫外线照射微生物(细菌、病毒、芽孢等病原体)并破坏核酸结构，从而达到微生物灭活的目的"
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"data": "。相比于传统杀菌消毒技术(如加氯法、臭氧法、紫外汞灯等)，深紫外LED具有杀菌效率高、适用性强(广谱)、无化学污染物、操作简单等优点，可广泛应用于空气、水体和物体表面消杀。近期，随着新型冠状病毒(COVID-19)在全球范围内的传播，深紫外LED消毒被认为是一种有效消灭新型冠状病毒的方法，如韩国首尔伟傲世和美国SETi公司采用深紫外LED成功地在30 s内杀死99.9%新型冠状病毒"
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"name": "text",
"data": "。在当前全球新冠肺炎疫情防控中，深紫外LED消毒技术已用于公共场所、交通工具、个人防护等领域(如"
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}
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"title": [
{
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"data": "Disinfection applications of DUV-LEDs in public elevator(a), aircraft cabin(b) and individual protection(c)."
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"data": "与汞灯相比，深紫外LED具有环保无汞、寿命长、功耗低、响应快、结构轻巧等优点(如"
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"data": ")，市场潜力巨大"
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"data": "。据权威机构预计，2021年全球深紫外LED市场规模将增加到6.1亿美元，年均复合增长率为110%"
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"data": "，且随着《水俣公约》正式生效和新冠肺炎疫情影响，深紫外LED消毒市场将呈现爆发式增长。对于深紫外LED而言，从生产设备、材料外延、芯片制造到封装都与近紫外和蓝光LED存在较大差异，且由于成本极高(同功率白光LED的100倍以上)，光效与可靠性偏低，远不能满足应用需求"
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"rid": "R14",
"data": [
{
"name": "text",
"data": "14"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "19",
"type": "bibr",
"rid": "R19",
"data": [
{
"name": "text",
"data": "19"
}
]
}
}
],
"rid": [
"R14",
"R15",
"R16",
"R17",
"R18",
"R19"
],
"text": "14-19",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。近二十年来，波长为365 nm以上InGaN基近紫外LED外量子效率可达46%76%，而AlGaN基深紫外LED外量子效率一般小于20%，其中用于杀菌消毒的深紫外LED(波长为265280 nm)外量子效率不足5%，严重影响了深紫外LED的应用效能"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "20",
"type": "bibr",
"rid": "R20",
"data": [
{
"name": "text",
"data": "20"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。随着深紫外LED发光波长逐渐变短，高质量AlGaN材料外延和有效掺杂面临着技术挑战，同时也对器件封装技术提出了更高要求。"
}
]
},
{
"name": "fig",
"data": {
"id": "F2",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图2"
}
],
"title": [
{
"name": "text",
"data": "深紫外LED与传统汞灯性能对比"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.2"
}
],
"title": [
{
"name": "text",
"data": "Performance comparison of DUV-LED and traditional mercury lamp"
}
]
}
],
"subcaption": [],
"note": [],
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{
"name": "p",
"data": [
{
"name": "text",
"data": "深紫外LED封装技术与目前白光LED封装技术有所不同。具体而言，白光LED主要采用有机材料(环氧树脂、硅胶等)进行封装，但由于深紫外光波长短且能量高，有机材料在长时间深紫外光辐射下会发生紫外降解，严重影响深紫外LED的光效和可靠性"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "21",
"type": "bibr",
"rid": "R21",
"data": [
{
"name": "text",
"data": "21"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。为此，研究者提出了多种深紫外LED封装技术，主要包括早期TO封装技术、半无机封装技术和全无机封装技术(相关封装产品如"
},
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": ")。TO封装是利用传统TO工艺将深紫外LED芯片密封于金属基板与金属管壳组成的密闭腔体内，其中金属管壳上的玻璃光窗用于光输出。虽然TO封装可靠性高、气密性好，但由于结构中含有金属引脚，导致结构尺寸较大，不利于芯片散热，仅适合小功率器件封装。半无机封装是将深紫外LED芯片贴装在封装基板腔体(围坝)内，再利用有机粘胶将石英玻璃盖板固定于封装基板围坝上。半无机封装避免了大量有机材料直接灌封，降低了出光材料紫外降解问题，工艺简单、成本低，但有机粘接层存在紫外降解风险，长时间工作会发生粘结层失效、玻璃盖板脱落等问题，且有机粘结材料难以满足气密性要求，芯片易受外界环境影响。为此，研究者提出了全无机封装技术，利用全无机材料实现深紫外LED气密封装，避免使用有机材料，从而提高深紫外LED的可靠性。随着深紫外LED芯片性能的不断提升，全无机气密封装技术能够保证深紫外LED器件长期工作性能，特别是在恶劣环境下的长期可靠性。"
}
]
},
{
"name": "fig",
"data": {
"id": "F3",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图3"
}
],
"title": [
{
"name": "text",
"data": "深紫外LED封装产品。(a)TO封装;(b)半无机封装;(c)(d)全无机封装。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.3"
}
],
"title": [
{
"name": "text",
"data": "DUV-LEDs with TO packaging(a), semi-inorganic packaging(b) and all-inorganic packaging((c)-(d))."
}
]
}
],
"subcaption": [],
"note": [],
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{
"name": "p",
"data": [
{
"name": "text",
"data": "近年来，国内外研究者对深紫外LED封装技术进行了深入研究，从封装技术角度提高了深紫外LED光效和可靠性，推动了深紫外LED技术发展。但是，与波长较长的近紫外和蓝光LED相比，深紫外LED封装性能仍有很大提升空间。本综述重点对深紫外LED封装关键技术进行系统分析，从光效和可靠性角度阐述深紫外LED封装最新技术进展，并对后续技术发展进行展望。"
}
]
}
]
},
{
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"data": [
{
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"data": {
"title": [
{
"name": "text",
"data": "2 深紫外LED封装关键技术"
}
],
"level": "1",
"id": "s2"
}
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.1 封装材料选择"
}
],
"level": "2",
"id": "s2a"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "LED封装材料主要包括出光材料、散热基板材料和焊接键合材料。其中，出光材料用于芯片发光提取、光调节、机械保护等;散热基板用于芯片电互连、散热与机械支撑等;焊接键合材料用于芯片固晶、透镜键合等。"
}
]
},
{
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"data": [
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"data": {
"title": [
{
"name": "text",
"data": "2.1.1 出光材料"
}
],
"level": "3",
"id": "s2a1"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "LED出光结构一般采用透明材料实现光输出和调节，同时对芯片和线路层起到保护作用。白光LED封装采用有机材料作为出光材料，由于有机材料耐热性差和热导率低，LED芯片产生的热量会导致有机封装层温度升高，长时间高温下有机材料出现热降解和热老化，甚至是不可逆的碳化现象"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "22",
"type": "bibr",
"rid": "R22",
"data": [
{
"name": "text",
"data": "22"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": ";此外，在高能量紫外光辐射下，传统有机材料(硅胶、环氧树脂等)会发生光化学反应，有机分子链中的C—C、C—O、C—H等共价键吸收特定波长的紫外光后出现共价键断裂，形成大量强极性自由基，直接破坏有机材料的成分和结构，造成有机封装层出现透过率下降、微裂纹等不可逆的改变(如"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": ")，且随着深紫外光能量不断增加，这些问题将更为严重，使得传统有机材料难以满足深紫外LED封装需求"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "23",
"type": "bibr",
"rid": "R23",
"data": [
{
"name": "text",
"data": "23"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。其中，硅胶热老化的原因是高温下硅胶发生了甲基官能团解离和键断裂，导致硅胶层黄化和透光率降低"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "24",
"type": "bibr",
"rid": "R24",
"data": [
{
"name": "text",
"data": "24"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": ";而硅胶紫外降解是由于紫外光辐射下硅胶发生了诱导聚合，引起硅胶硬度和质量发生变化"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
{
"name": "text",
"data": "25"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。这些都会造成深紫外LED性能急剧下降。"
}
]
},
{
"name": "fig",
"data": {
"id": "F4",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图4"
}
],
"title": [
{
"name": "text",
"data": "不同波段深紫外LED中出现的硅胶层裂纹"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
{
"name": "text",
"data": "25"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.4"
}
],
"title": [
{
"name": "text",
"data": "Silicone layer cracks in different DUV-LEDs"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
{
"name": "text",
"data": "25"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
}
]
}
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"subcaption": [],
"note": [],
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{
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"data": [
{
"name": "text",
"data": "为了避免硅胶紫外降解问题，研究者开发了耐受紫外光的有机透明材料来封装深紫外LED，如氟树脂、甲基硅氧烷混合材料等。日本名城大学Hirano等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
{
"name": "text",
"data": "25"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "26",
"type": "bibr",
"rid": "R26",
"data": [
{
"name": "text",
"data": "26"
}
]
}
}
],
"rid": [
"R25",
"R26"
],
"text": "25-26",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "制备了3种不同端基结构的氟树脂，其中S型氟树脂在整个深紫外波段具有最高透过率("
},
{
"name": "text",
"data": ">"
},
{
"name": "text",
"data": "90%)，而A型和E型氟树脂在260 nm以下深紫外波段的透过率明显降低，与硅胶降低程度相似(如"
},
{
"name": "xref",
"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
{
"name": "text",
"data": "图5"
}
]
}
},
{
"name": "text",
"data": ")。与此同时，对比分析了三种氟树脂封装深紫外LED(265 nm)的可靠性，发现在20 mA条件下深紫外LED分别工作95 h和397 h后，A型和E型氟树脂封装的深紫外LED芯片电极均出现损坏，导致LED漏电流增加，而S型氟树脂封装工作1 033 h也未出现电极受损现象。此外，在230 ℃条件下分别加热32 h和105 h,A型和E型氟树脂层中出现大块气泡，而S型氟树脂加热660 h也未出现气泡。这主要是因为A型和E型氟树脂的端基在深紫外光辐射下会发生光降解，从而产生气泡和造成芯片电极损坏;而S型氟树脂表现出高耐紫外性，在深紫外光辐射下无明显降解和老化。但是，S型氟树脂也存在粘结性差、成本高、耐热性不良等问题，限制了其在深紫外LED封装中的应用。另一方面，非气密的有机材料对外界环境耐受能力较差，作为封装材料时会发生透气、透湿等，降低LED器件可靠性，这在恶劣环境(高温、高湿、腐蚀等)下显得尤为明显"
},
{
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"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "27",
"type": "bibr",
"rid": "R27",
"data": [
{
"name": "text",
"data": "27"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "29",
"type": "bibr",
"rid": "R29",
"data": [
{
"name": "text",
"data": "29"
}
]
}
}
],
"rid": [
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"R28",
"R29"
],
"text": "27-29",
"type": "bibr"
}
},
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}
]
},
{
"name": "text",
"data": "。"
}
]
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"id": "F5",
"caption": [
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"label": [
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"title": [
{
"name": "text",
"data": "3种氟树脂(A型、E型和S型氟树脂)透过率曲线"
},
{
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"data": {
"text": "25",
"type": "bibr",
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"data": [
{
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"data": "25"
}
]
}
},
{
"name": "text",
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}
]
}
]
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"label": [
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"data": "Fig.5"
}
],
"title": [
{
"name": "text",
"data": "Transmittance curves of three fluororesins(A-type, E-type and S-type)"
},
{
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{
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"data": "["
},
{
"name": "xref",
"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
{
"name": "text",
"data": "25"
}
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}
},
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"data": "总体而言，虽然有报道部分有机材料能够耐受紫外光，但是由于有机材料耐热性差和非气密性，使得有机材料在深紫外LED封装中仍然受限。近年来，研究者尝试采用石英玻璃、蓝宝石等无机透明材料来封装深紫外LED。但是，蓝宝石不易加工，难以加工成曲面透镜，且成本较高;石英玻璃的物化性能稳定，在深紫外波段具有高透过率(大于90%)，且机械强度高、耐热性好、抗紫外线和气密性高，可见石英玻璃是深紫外LED封装用透镜材料的有效选择。研究者发现石英玻璃在280 nm的透过率高达93%，而硅胶在280 nm的透过率仅为79%;相对于硅胶封装，老化500 h后石英玻璃封装的深紫外LED光功率衰减幅度降低13%，这表明石英玻璃封装能够提高深紫外LED可靠性"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "30",
"type": "bibr",
"rid": "R30",
"data": [
{
"name": "text",
"data": "30"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "此外，为了调节深紫外LED发光角度，除了平面石英玻璃盖板外，研究者也制备了不同曲率的石英玻璃透镜，以满足深紫外LED应用需求。与平面盖板不同，曲面透镜不利于后续操作，很难实现与陶瓷基板间可靠键合，且气密性难以保证。研究者利用透明有机粘胶将曲面透镜与平面盖板粘结在一起，再将平面盖板与陶瓷基板键合，避免了曲面透镜的使用难题。但是，有机粘胶很容易被深紫外光降解，存在粘结失效、透光率下降等不利影响。为此，日本旭硝子公司(AGC)开发了一种新型石英透镜用于深紫外LED封装(如"
},
{
"name": "xref",
"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图6"
}
]
}
},
{
"name": "text",
"data": ")，将石英曲面透镜和平面石英盖板直接烧结在一起(不需要中间粘胶)，既方便了后续键合操作，也获得了不同发光角。"
}
]
},
{
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"data": {
"id": "F6",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图6"
}
],
"title": [
{
"name": "text",
"data": "新型石英透镜及其深紫外LED封装"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.6"
}
],
"title": [
{
"name": "text",
"data": "Quartz lens and its DUV-LED packaging"
}
]
}
],
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"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.1.2 散热基板材料"
}
],
"level": "3",
"id": "s2a2"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "目前，LED散热基板材料主要有树脂类、金属类和陶瓷类。其中树脂类和金属类基板均含有有机树脂绝缘层，这会降低散热基板的热导率，影响基板散热性能;而陶瓷类基板主要包括高温/低温共烧陶瓷基板(HTCC/LTCC)、厚膜陶瓷基板(TPC)、覆铜陶瓷基板(DBC)以及电镀陶瓷基板(DPC)"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "31",
"type": "bibr",
"rid": "R31",
"data": [
{
"name": "text",
"data": "31"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "33",
"type": "bibr",
"rid": "R33",
"data": [
{
"name": "text",
"data": "33"
}
]
}
}
],
"rid": [
"R31",
"R32",
"R33"
],
"text": "31-33",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。陶瓷基板具有机械强度高、绝缘性好、导热性高、耐热性好、热膨胀系数小等诸多优势，广泛应用于功率器件封装，特别是大功率LED封装"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "34",
"type": "bibr",
"rid": "R34",
"data": [
{
"name": "text",
"data": "34"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "36",
"type": "bibr",
"rid": "R36",
"data": [
{
"name": "text",
"data": "36"
}
]
}
}
],
"rid": [
"R34",
"R35",
"R36"
],
"text": "34-36",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。由于深紫外LED光效较低，输入的绝大部分电能转换为热量，为了避免过多热量对芯片造成高温损伤，需要将芯片产生的热量及时耗散到周围环境中，而深紫外LED主要依靠散热基板作为热传导路径，因此高导热陶瓷基板是深紫外LED封装用散热基板的很好选择。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.1.3 焊接键合材料"
}
],
"level": "3",
"id": "s2a3"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "深紫外LED焊接材料包括芯片固晶材料和基板焊接材料，分别用于实现芯片、玻璃盖板(透镜)与陶瓷基板间焊接。倒装芯片常采用金锡共晶方式实现芯片固晶，水平和垂直芯片可利用导电银胶、无铅焊膏等完成芯片固晶。相对于银胶和无铅焊膏，金锡共晶键合强度高、界面质量好，且键合层热导率高，降低了LED热阻"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "37",
"type": "bibr",
"rid": "R37",
"data": [
{
"name": "text",
"data": "37"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。玻璃盖板焊接是在完成芯片固晶后进行，因此焊接温度受到芯片固晶层耐受温度限制，主要包括直接键合和焊料键合。直接键合不需要中间键合材料，利用高温高压方法直接完成玻璃盖板与陶瓷基板间焊接，键合界面平整、强度高，但对设备和工艺控制要求高;焊料键合是采用低温锡基焊料作为中间层，在加热加压条件下，利用焊料层与金属层间原子相互扩散来完成键合，工艺温度低、操作简单。目前常采用焊料键合来实现玻璃盖板与陶瓷基板间可靠键合，但需要同时在玻璃盖板和陶瓷基板表面制备金属层，以满足金属焊接需求，且键合工艺过程中需要考虑焊料选择、焊料涂覆、焊料溢出和焊接温度等问题。"
}
]
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.2 封装结构设计"
}
],
"level": "2",
"id": "s2b"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "深紫外LED对外界环境中水蒸气等有害气体十分敏感，水蒸气浸入封装体内会对芯片和电路层造成破坏，影响LED使用寿命。为了提高深紫外LED可靠性，在全无机封装材料基础上还必须采用气密封装，将芯片封装在密闭腔体内(空气或惰性气体环境等)，以避免外界环境影响"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "38",
"type": "bibr",
"rid": "R38",
"data": [
{
"name": "text",
"data": "38"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。目前，常利用含腔体的封装结构来实现LED气密封装。早在2004年，TO封装结构被用于深紫外LED气密封装(如"
},
{
"name": "xref",
"data": {
"text": "图7(a)",
"type": "fig",
"rid": "F7",
"data": [
{
"name": "text",
"data": "图7(a)"
}
]
}
},
{
"name": "text",
"data": ")，利用电阻压焊工艺实现含玻璃光窗的金属管壳与金属基板间高强度焊接"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "39",
"type": "bibr",
"rid": "R39",
"data": [
{
"name": "text",
"data": "39"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，但前述已指出TO封装仅适合小功率器件封装。鉴于陶瓷基板的高导热性等优点，研究者提出了深紫外LED表面贴装封装结构(如"
},
{
"name": "xref",
"data": {
"text": "图7(b)、(c)",
"type": "fig",
"rid": "F7",
"data": [
{
"name": "text",
"data": "图7(b)、(c)"
}
]
}
},
{
"name": "text",
"data": ")，包括三维玻璃盖板和三维陶瓷基板封装形式。前者芯片贴装在平面陶瓷基板上，利用三维玻璃盖板与陶瓷基板间键合使芯片密封在玻璃腔体内。虽然这种结构能够提高芯片侧壁光提取，但由于石英玻璃不易加工，很难制备出含腔体的三维玻璃盖板，且需要考虑玻璃盖板腔体与封装基板间可靠键合。为此，研究者更关注三维陶瓷基板封装结构，将芯片贴装在三维陶瓷基板腔体(围坝)内的金属焊盘上，同时利用石英玻璃作为封装盖板，再将玻璃盖板与三维陶瓷基板键合(焊接)"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "40",
"type": "bibr",
"rid": "R40",
"data": [
{
"name": "text",
"data": "40"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，其关键在于三维陶瓷基板制备、玻璃盖板与陶瓷基板间高强度键合。"
}
]
},
{
"name": "fig",
"data": {
"id": "F7",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图7"
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],
"title": [
{
"name": "text",
"data": "深紫外LED全无机气密封装。(a)TO封装;(b)三维玻璃盖板封装;(c)三维陶瓷基板封装。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.7"
}
],
"title": [
{
"name": "text",
"data": "All-inorganic DUV-LED with TO packaging(a), 3D glass packaging(b) and 3D substrate packaging(c)."
}
]
}
],
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"data": {
"title": [
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"name": "text",
"data": "2.2.1 三维陶瓷基板制备"
}
],
"level": "3",
"id": "s2b1"
}
},
{
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"data": [
{
"name": "text",
"data": "目前常见的三维陶瓷基板是HTCC/LTCC，利用丝网印刷、叠压以及烧结等制备出三维腔体结构，由于制备过程中多层陶瓷生胚叠压烧结时会出现收缩比例差异问题，影响腔体结构尺寸精度。为了避免这一难题，阳升公司提出多次丝网印刷和高温烧结工艺"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "41",
"type": "bibr",
"rid": "R41",
"data": [
{
"name": "text",
"data": "41"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，首先制备出平面厚膜陶瓷基板(TPC)，然后再通过多次丝网印刷和高温烧结工艺在该基板上制作陶瓷围坝(如"
},
{
"name": "xref",
"data": {
"text": "图8(a)",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8(a)"
}
]
}
},
{
"name": "text",
"data": ")。该方法需要多次丝网印刷和烧结，工艺复杂，且受到丝网印刷限制，围坝高度低、图形精度差。鉴于此，研究者提出采用粘接技术制备三维陶瓷基板，如"
},
{
"name": "xref",
"data": {
"text": "图8(b)",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8(b)"
}
]
}
},
{
"name": "text",
"data": "所示，但有机粘胶存在导热和耐热差、非气密性等问题，影响了该技术发展。此外，也有研究者提出含电镀金属围坝的三维陶瓷基板"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "42",
"type": "bibr",
"rid": "R42",
"data": [
{
"name": "text",
"data": "42"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "43",
"type": "bibr",
"rid": "R43",
"data": [
{
"name": "text",
"data": "43"
}
]
}
}
],
"rid": [
"R42",
"R43"
],
"text": "42-43",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "(如"
},
{
"name": "xref",
"data": {
"text": "图8(c)",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8(c)"
}
]
}
},
{
"name": "text",
"data": ")，通过采用多层电镀技术，在平面DPC基板上直接制作出厚铜围坝。该三维基板无中间粘结层，气密性好，且保留了平面DPC基板的高线路精度、垂直互连等优势，但由于电镀厚铜层应力大，基板容易翘曲，且电镀生长效率低，生产成本高。为此，本课题组采用模具成型技术和直写技术在平面DPC基板上制备免烧陶瓷围坝(如"
},
{
"name": "xref",
"data": {
"text": "图8(d)",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8(d)"
}
]
}
},
{
"name": "text",
"data": ")，得到了含免烧陶瓷围坝的三维陶瓷基板，具有热稳定性高、工艺简单、成本低等优势"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "44",
"type": "bibr",
"rid": "R44",
"data": [
{
"name": "text",
"data": "44"
}
]
}
},
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"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "47",
"type": "bibr",
"rid": "R47",
"data": [
{
"name": "text",
"data": "47"
}
]
}
}
],
"rid": [
"R44",
"R45",
"R46",
"R47"
],
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"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。"
}
]
},
{
"name": "fig",
"data": {
"id": "F8",
"caption": [
{
"lang": "zh",
"label": [
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"name": "text",
"data": "图8"
}
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"title": [
{
"name": "text",
"data": "三维陶瓷基板实物图。(a)烧结型;(b)粘接型;(c)多层电镀型;(d)免烧陶瓷围坝型。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.8"
}
],
"title": [
{
"name": "text",
"data": "3D ceramic substrates of sintering type(a), adhesion type(b), multi-layer plating type(c) and un-sintering type(d)."
}
]
}
],
"subcaption": [],
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"data": [
{
"name": "text",
"data": "总体而言，目前业界已开发多种三维陶瓷基板制备技术，满足了LED封装需求。与平面陶瓷基板不同之处在于围坝材料与制备工艺，其中粘接围坝、电镀围坝和免烧陶瓷围坝技术均能在平面DPC基板上制备腔体结构，同时维持了DPC基板高线路精度、垂直互连、高导热等优点。为了满足深紫外LED封装需求，且考虑到制造成本，免烧陶瓷围坝三维基板是深紫外LED封装基板很好的选择，可以实现小型化、高导热、高气密和低成本的深紫外LED封装，但仍需要考虑免烧陶瓷围坝存在的一些问题，包括耐水性、抗酸碱性等。"
}
]
}
]
},
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"data": {
"title": [
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"name": "text",
"data": "2.2.2 玻璃盖板与陶瓷基板间键合"
}
],
"level": "3",
"id": "s2b2"
}
},
{
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"data": [
{
"name": "text",
"data": "前文指出玻璃盖板与陶瓷基板间键合包括直接键合和焊料键合，直接键合常采用电阻压焊工艺实现键合层局部焊接，不需要中间层材料，但需要在玻璃盖板四周制作金属焊框(如"
},
{
"name": "xref",
"data": {
"text": "图9(a)",
"type": "fig",
"rid": "F9",
"data": [
{
"name": "text",
"data": "图9(a)"
}
]
}
},
{
"name": "text",
"data": ")，并采用含金属围坝的三维陶瓷基板。焊料键合是以无铅焊料作为中间键合层材料，利用焊料熔化实现可靠键合，封装结构中需要同时在玻璃盖板和陶瓷基板围坝上制作金属焊接层。目前，石英玻璃表面金属化常用方法有镀膜工艺和金属烧结工艺，其中镀膜工艺是通过光刻显影、溅射镀膜、电镀增厚等在玻璃表面制备图形化金属层(膜系结构一般为Cr/Ni/Cu、Ti/Ni/Au等)，如"
},
{
"name": "xref",
"data": {
"text": "图9(b)",
"type": "fig",
"rid": "F9",
"data": [
{
"name": "text",
"data": "图9(b)"
}
]
}
},
{
"name": "text",
"data": "所示，不易得到相对较厚的金属层结构;金属烧结工艺是将金属浆料(如导电银浆、铜浆等)通过丝网印刷涂覆在玻璃表面，烧结后得到图形化金属层，如"
},
{
"name": "xref",
"data": {
"text": "图9(c)",
"type": "fig",
"rid": "F9",
"data": [
{
"name": "text",
"data": "图9(c)"
}
]
}
},
{
"name": "text",
"data": "所示。烧结法制备的金属层结合强度高、制备工艺简单、成本低，但图形精度不高。总的来看，镀膜工艺和金属烧结工艺均可实现玻璃表面金属化，其中金属烧结工艺成本低、工艺简单、设备要求低，更能满足深紫外LED封装对玻璃盖板表面金属化的实际需求。"
}
]
},
{
"name": "fig",
"data": {
"id": "F9",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图9"
}
],
"title": [
{
"name": "text",
"data": "(a)含金属边框玻璃盖板;(b)镀膜法制备玻璃盖板;(c)烧结法制备玻璃盖板。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.9"
}
],
"title": [
{
"name": "text",
"data": "(a)Glass plate with metal frame. Glass plate with metal layer prepared by coating method(b) and sintering method(c)."
}
]
}
],
"subcaption": [],
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"data": {
"title": [
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"data": "2.3 封装工艺优化"
}
],
"level": "2",
"id": "s2c"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "深紫外LED封装工艺主要包括固晶、打线(或倒装共晶)和玻璃盖板焊接(键合)，如"
},
{
"name": "xref",
"data": {
"text": "图10",
"type": "fig",
"rid": "F10",
"data": [
{
"name": "text",
"data": "图10"
}
]
}
},
{
"name": "text",
"data": "所示。固晶工艺是采用焊接材料将芯片贴装在三维陶瓷基板围坝内，以固定芯片并为芯片提供散热通道;打线工艺是采用金线键合实现芯片电极与基板上焊盘的电互连，从而为芯片供电(倒装芯片常采用倒装共晶工艺直接将芯片贴装在基板焊盘上，利用金锡共晶实现电互连和散热);玻璃盖板键合是整个封装工艺的关键环节，由于芯片已贴装在基板腔体内，玻璃盖板键合的工艺温度不能太高，温度过高会降低深紫外LED性能。为此，有必要采用低温焊接工艺来实现玻璃盖板与三维陶瓷基板间可靠键合。"
}
]
},
{
"name": "fig",
"data": {
"id": "F10",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图10"
}
],
"title": [
{
"name": "text",
"data": "深紫外LED封装工艺流程"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.10"
}
],
"title": [
{
"name": "text",
"data": "Packaging process of DUV-LED"
}
]
}
],
"subcaption": [],
"note": [],
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{
"name": "p",
"data": [
{
"name": "text",
"data": "针对上述低温焊接工艺需求，目前主要有低熔点焊料键合和低温键合两种方式。低熔点焊料键合一方面是利用In、Sn等低熔点焊料，虽然能实现低温键合，但键合层的键合强度低，且实际使用温度较低"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "48",
"type": "bibr",
"rid": "R48",
"data": [
{
"name": "text",
"data": "48"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "49",
"type": "bibr",
"rid": "R49",
"data": [
{
"name": "text",
"data": "49"
}
]
}
}
],
"rid": [
"R48",
"R49"
],
"text": "48-49",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": ";另一方面是通过纳米金属颗粒(纳米铜、银等)的低温键合特性来实现低温焊接，但纳米材料的制备工艺复杂，且存在氧化和团聚问题"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "50",
"type": "bibr",
"rid": "R50",
"data": [
{
"name": "text",
"data": "50"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "53",
"type": "bibr",
"rid": "R53",
"data": [
{
"name": "text",
"data": "53"
}
]
}
}
],
"rid": [
"R50",
"R51",
"R52",
"R53"
],
"text": "50-53",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。低温键合过程中表面活化键合和原子扩散键合可有效降低工艺温度，但对设备要求高，一般需要真空环境和高压条件，且时间长、键合效率低。局部加热键合是一种有效的低温键合方法，键合过程中热量在封装结构的键合区局部，其他位置处于低温状态，避免了键合高温的不利影响"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "54",
"type": "bibr",
"rid": "R54",
"data": [
{
"name": "text",
"data": "54"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "55",
"type": "bibr",
"rid": "R55",
"data": [
{
"name": "text",
"data": "55"
}
]
}
}
],
"rid": [
"R54",
"R55"
],
"text": "54-55",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。研究者提出采用平行缝焊工艺完成带玻璃光窗的金属盖板与基板间局部加热(如"
},
{
"name": "xref",
"data": {
"text": "图11(a)",
"type": "fig",
"rid": "F11",
"data": [
{
"name": "text",
"data": "图11(a)"
}
]
}
},
{
"name": "text",
"data": ")"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "56",
"type": "bibr",
"rid": "R56",
"data": [
{
"name": "text",
"data": "56"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，从而实现高可靠气密封装，但玻璃光窗制备相对复杂，且封装效率较低。本课题组提出深紫外LED感应局部加热封装技术(如"
},
{
"name": "xref",
"data": {
"text": "图11(b)",
"type": "fig",
"rid": "F11",
"data": [
{
"name": "text",
"data": "图11(b)"
}
]
}
},
{
"name": "text",
"data": ")"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "57",
"type": "bibr",
"rid": "R57",
"data": [
{
"name": "text",
"data": "57"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，由于感应加热具有非接触、选择性及快速加热等特点，可精确实现玻璃盖板(含金属环)与基板间局部加热焊接，获得了高强度、高气密深紫外LED，但该方法需先对玻璃盖板和陶瓷基板进行金属化处理。此外，研究者也采用激光加热技术用于深紫外LED封装，利用激光局部加热特性实现玻璃盖板与陶瓷基板间焊接。该方法具有非接触加热、键合效率高、灵活性强等优点。"
}
]
},
{
"name": "fig",
"data": {
"id": "F11",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图11"
}
],
"title": [
{
"name": "text",
"data": "深紫外LED低温封装技术。(a)平行缝焊技术;(b)感应局部加热技术。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.11"
}
],
"title": [
{
"name": "text",
"data": "Low-temperature DUV-LED packaging technology. (a)Parallel seam welding technology. (b)Localized induction heating technology."
}
]
}
],
"subcaption": [],
"note": [],
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{
"name": "p",
"data": [
{
"name": "text",
"data": "总的来看，为了实现深紫外LED低温封装，研究者提出了多种低温键合方法实现玻璃盖板与陶瓷基板间键合。其中局部加热键合技术能有效避免键合高温对芯片和固晶层的热破坏，实现键合层局部高温和可靠键合。但上述方法均存在一些不足，例如成本高、设备要求高、工艺复杂等，难以满足大批量生产需求。为此，在牺牲一定可靠性的基础上，目前深紫外LED封装中更多通过梯度焊料设计和使用，利用高温焊料完成芯片固晶贴装，再采用低温焊料和整体加热完成玻璃盖板与陶瓷基板间键合，整个工艺相对成熟，封装结构内应力小。但是，上述提到的低温封装工艺均是针对单颗深紫外LED芯片进行封装，封装效率低、成本高，且产品一致性差。为了提高封装效率，本课题组开发了深紫外LED板级封装技术"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "38",
"type": "bibr",
"rid": "R38",
"data": [
{
"name": "text",
"data": "38"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，首先将多颗芯片分别贴装(固晶)在三维陶瓷基板各个围坝内，再利用板级焊接完成玻璃盖板与陶瓷基板间焊料键合，最后通过切割获得多颗深紫外LED(如"
},
{
"name": "xref",
"data": {
"text": "图12",
"type": "fig",
"rid": "F12",
"data": [
{
"name": "text",
"data": "图12"
}
]
}
},
{
"name": "text",
"data": ")。该方法不仅实现了深紫外LED全无机气密封装，且满足批量生产需求，工艺成本低，但封装中需要解决玻璃盖板表面金属化、低温焊料涂覆、键合对准等问题。"
}
]
},
{
"name": "fig",
"data": {
"id": "F12",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图12"
}
],
"title": [
{
"name": "text",
"data": "深紫外LED全无机板级封装产品"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.12"
}
],
"title": [
{
"name": "text",
"data": "Wafer-level and all-inorganic packaging of DUV-LEDs "
}
]
}
],
"subcaption": [],
"note": [],
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"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.4 反射光损耗机制"
}
],
"level": "2",
"id": "s2d"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "对于深紫外LED封装而言，芯片贴装在三维封装基板围坝内，平面玻璃盖板键合于陶瓷基板围坝上，围坝内部充填空气或惰性气体。在这种封装结构中，由于材料折射率差的影响，光线在玻璃和空气界面以及芯片和空气界面发生反射(如"
},
{
"name": "xref",
"data": {
"text": "图13",
"type": "fig",
"rid": "F13",
"data": [
{
"name": "text",
"data": "图13"
}
]
}
},
{
"name": "text",
"data": ")，反射损耗会降低深紫外LED光效。"
}
]
},
{
"name": "fig",
"data": {
"id": "F13",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图13"
}
],
"title": [
{
"name": "text",
"data": "深紫外LED封装结构中光传播示意图"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.13"
}
],
"title": [
{
"name": "text",
"data": "Schematic of light propagation in DUV-LED structure"
}
]
}
],
"subcaption": [],
"note": [],
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"data": [
{
"name": "text",
"data": "光线入射到不同折射率的介质界面时，一部分光线发生菲涅尔反射。根据菲涅尔公式，反射率"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "text",
"data": "为:"
}
]
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{
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},
{
"name": "text",
"data": " "
}
],
"id": "DF1"
}
},
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"data": {
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"name": "text",
"data": " "
}
],
"id": "DF2"
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},
{
"name": "p",
"data": [
{
"name": "text",
"data": "其中，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "text",
"data": "的下标s和p分别是垂直入射面的s偏振光和平行入射面的p偏振光，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "θ"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "为入射角。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "此外，光线由光密介质(折射率为"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "n"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": ")入射到光疏介质(折射率为"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "n"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": ")时，根据Snell定律可得:"
}
]
},
{
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"data": {
"label": [
{
"name": "text",
"data": "(3)"
}
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"data": [
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"data": " "
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"data": " "
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"data": " "
}
],
"id": "DF3"
}
},
{
"name": "p",
"data": [
{
"name": "italic",
"data": [
{
"name": "text",
"data": "θ"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "为入射角，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "θ"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "为折射角，当"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "θ"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "为90°时，光在界面发生全反射，此时的入射角为全反射临界角"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "θ"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "c"
}
]
},
{
"name": "text",
"data": "，满足如下关系式:"
}
]
},
{
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"data": {
"label": [
{
"name": "text",
"data": "(4)"
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"data": [
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"data": " "
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"data": " "
},
{
"name": "text",
"data": " "
}
],
"id": "DF4"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "当入射角大于临界角"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "θ"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "c"
}
]
},
{
"name": "text",
"data": "时，LED有源层发出的光不能从芯片上表面出射出去。更重要的是，与GaN基蓝色LED芯片不同，AlGaN基深紫外LED芯片拥有高Al组分的量子阱，AlGaN最顶层价带为晶体场分裂带，导致深紫外LED芯片有源层发出的光不仅存在TE偏振模式(E⊥c)，还存在TM偏振模式(E∥c)，且随着Al含量增加，TM偏振光逐渐成为主导"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "58",
"type": "bibr",
"rid": "R58",
"data": [
{
"name": "text",
"data": "58"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "59",
"type": "bibr",
"rid": "R59",
"data": [
{
"name": "text",
"data": "59"
}
]
}
}
],
"rid": [
"R58",
"R59"
],
"text": "58-59",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。TE偏振光沿着垂直方向传播到芯片上表面，TM偏振光沿着水平方向传播到芯片侧面"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "60",
"type": "bibr",
"rid": "R60",
"data": [
{
"name": "text",
"data": "60"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。因此，不仅在芯片上表面会存在反射损耗，由于AlGaN材料与空气折射率差更大，导致芯片侧面出光会出现严重的反射损耗，这都将影响深紫外LED光效。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "总之，不仅在玻璃上、下表面存在菲涅尔反射损耗，同时在芯片上表面和侧面存在菲涅尔反射损耗和全反射损耗。为了提高深紫外LED光效，有必要采用一些方法来抑制反射损耗，包括用于抑制菲涅尔反射的薄膜涂层、纳米结构等方法，用于抑制全反射的半球形透镜、表面粗化、纳米颗粒掺杂封装层等方法。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.5 结温和热管理"
}
],
"level": "2",
"id": "s2e"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "由于目前深紫外LED光效相对较低，为了满足应用需求，常采用多芯片集成封装形式来获得高光功率深紫外LED模组。但是，在追求高光功率密度的同时，单位面积热流密度更大，热量聚集造成深紫外LED结温升高，进而影响深紫外LED光效和可靠性。这一方面是由于芯片有源区温度升高导致载流子能量增加，增大了电流泄露概率，降低深紫外LED内量子效率;另一方面结温升高会引起外延材料缺陷和杂质形成深能级，造成非辐射复合概率增大，降低深紫外LED外量子效率"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "61",
"type": "bibr",
"rid": "R61",
"data": [
{
"name": "text",
"data": "61"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "62",
"type": "bibr",
"rid": "R62",
"data": [
{
"name": "text",
"data": "62"
}
]
}
}
],
"rid": [
"R61",
"R62"
],
"text": "61-62",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。因此，为了降低结温升高的不利影响，需要提高深紫外LED封装散热性能，维持器件的长期工作性能。与白光LED有所不同，深紫外LED的热量均来自于芯片，绝大部分电能转化为热量"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "P"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "heat"
}
]
},
{
"name": "text",
"data": "，由下式计算:"
}
]
},
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"data": {
"label": [
{
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"data": "(5)"
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],
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"data": " "
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"data": " "
}
],
"id": "DF5"
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},
{
"name": "p",
"data": [
{
"name": "text",
"data": "其中，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "、"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "V"
}
]
},
{
"name": "text",
"data": "分别表示输入电流和输入电压，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "η"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "WPE"
}
]
},
{
"name": "text",
"data": "为深紫外LED光电转换效率或插拔效率(Wall Plug Efficiency,WPE)，是指输出光功率与输入电功率的比值，即:"
}
]
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"data": " "
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"data": " "
},
{
"name": "text",
"data": " "
}
],
"id": "DF6"
}
},
{
"name": "p",
"data": [
{
"name": "italic",
"data": [
{
"name": "text",
"data": "P"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "out"
}
]
},
{
"name": "text",
"data": "是输出光功率，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "P"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "in"
}
]
},
{
"name": "text",
"data": "是输入电功率，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "η"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "EE"
}
]
},
{
"name": "text",
"data": "表示电效率，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "η"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "EQE"
}
]
},
{
"name": "text",
"data": "是外量子效率，即LED输出光子数与输入载流子数的比值。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "深紫外LED芯片贴装于封装基板上，绝大部分热量通过封装基板传导到周围环境中，如"
},
{
"name": "xref",
"data": {
"text": "图14",
"type": "fig",
"rid": "F14",
"data": [
{
"name": "text",
"data": "图14"
}
]
}
},
{
"name": "text",
"data": "所示。深紫外LED结温"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "T"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "j"
}
]
},
{
"name": "text",
"data": "可表示为:"
}
]
},
{
"name": "fig",
"data": {
"id": "F14",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图14"
}
],
"title": [
{
"name": "text",
"data": "深紫外LED热传输路径示意图"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.14"
}
],
"title": [
{
"name": "text",
"data": "Schematic of heat transmission path in DUV-LED"
}
]
}
],
"subcaption": [],
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{
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"data": " "
},
{
"name": "text",
"data": " "
}
],
"id": "DF7"
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},
{
"name": "p",
"data": [
{
"name": "text",
"data": "其中，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "T"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "a"
}
]
},
{
"name": "text",
"data": "为环境温度，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "sum"
}
]
},
{
"name": "text",
"data": "为深紫外LED总热阻，也是芯片热阻"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "c"
}
]
},
{
"name": "text",
"data": "、固晶层热阻"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "b"
}
]
},
{
"name": "text",
"data": "、封装基板热阻"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "s"
}
]
},
{
"name": "text",
"data": "和热界面材料(固晶层)热阻"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "t"
}
]
},
{
"name": "text",
"data": "的总和。为了降低深紫外LED结温，可通过封装结构优化和有效热管理等方法来降低深紫外LED总热阻，包括共晶键合、氮化铝陶瓷基板、高导热固晶材料、被动散热(散热翅片等)和主动散热(风冷、水冷等)，从而提高深紫外LED散热性能和可靠性。"
}
]
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "3 深紫外LED封装研究进展"
}
],
"level": "1",
"id": "s3"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "深紫外LED封装直接影响深紫外LED器件的性能，而评价深紫外LED性能好坏的主要指标有光效和可靠性，分别用于衡量深紫外LED的光电转换效率和使用寿命。针对深紫外LED封装，近年来研究者围绕提高光效与可靠性展开了相关研究。"
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "3.1 提高光效"
}
],
"level": "2",
"id": "s3a"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "深紫外LED的光效主要由外量子效率决定，而外量子效率受内量子效率和光提取效率影响。随着深紫外LED内量子效率不断提高("
},
{
"name": "text",
"data": ">"
},
{
"name": "text",
"data": "80%)"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "63",
"type": "bibr",
"rid": "R63",
"data": [
{
"name": "text",
"data": "63"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "64",
"type": "bibr",
"rid": "R64",
"data": [
{
"name": "text",
"data": "64"
}
]
}
}
],
"rid": [
"R63",
"R64"
],
"text": "63-64",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，深紫外LED光提取效率成为限制深紫外LED光效提高的关键因素，而深紫外LED光提取效率受封装技术影响较大。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "基于前述封装结构中反射光损耗分析，深紫外LED芯片表面的全反射损耗会严重影响深紫外LED光效。虽然在芯片制造中采用表面粗化、图形衬底、光子晶体、芯片形状优化等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "65",
"type": "bibr",
"rid": "R65",
"data": [
{
"name": "text",
"data": "65"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "68",
"type": "bibr",
"rid": "R68",
"data": [
{
"name": "text",
"data": "68"
}
]
}
}
],
"rid": [
"R65",
"R66",
"R67",
"R68"
],
"text": "65-68",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "能够抑制全反射损耗，但同样可从封装角度来抑制全反射损耗。目前，半球形透镜是常用的封装手段，使更多光垂直入射到透镜表面从而出射出去。为此，研究者把半球形石英透镜键合于深紫外LED芯片表面，但是绝大多数采用硅胶等有机粘结材料作为透镜与芯片间键合材料，硅胶不仅存在紫外降解、热老化等问题，同时由于硅胶折射率较低，使得紫外光在硅胶层上、下界面会发生反射损耗。针对这一问题，日本东北大学Ichikawa等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "69",
"type": "bibr",
"rid": "R69",
"data": [
{
"name": "text",
"data": "69"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "采用直接键合技术将半球形透镜键合于深紫外LED芯片表面。不仅避免了中间有机粘结层影响(老化、界面反射等)，且与无半球形透镜封装相比，半球形透镜封装的深紫外LED(280 nm)光功率提高2.3倍。但透镜直接键合的工艺条件苛刻(高真空和高压环境)、工艺时间长，且对透镜和芯片界面质量要求高。为此，日本名城大学Hirano等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "70",
"type": "bibr",
"rid": "R70",
"data": [
{
"name": "text",
"data": "70"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "采用耐紫外光的S型氟树脂作为透镜材料，通过模具成型方法在深紫外LED芯片上制备出半球形氟树脂透镜，使得深紫外LED光功率提高1.5倍，且实现了批量封装。但S型氟树脂的折射率仅为1.35，在芯片和氟树脂界面会出现反射损耗，且S型氟树脂存在粘结性差、成本高等问题。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "针对S型氟树脂折射率较低等问题，本课题组将氮化铝(AlN)纳米颗粒掺入氟树脂中，利用AlN颗粒的高折射率和宽禁带来提高氟树脂折射率，从而减小氟树脂层与芯片间的折射率差，降低了芯片表面全反射损耗"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "71",
"type": "bibr",
"rid": "R71",
"data": [
{
"name": "text",
"data": "71"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。由于纳米颗粒散射作用提高了光线出射几率，使得掺杂0.15% AlN氟树脂封装的深紫外LED光功率提高16.4%。针对S型氟树脂粘结性差的问题，华中科技大学Dai等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "72",
"type": "bibr",
"rid": "R72",
"data": [
{
"name": "text",
"data": "72"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "将氧化石墨烯掺入氟树脂中，采用氧化石墨烯掺杂氟树脂作为石英透镜与深紫外LED芯片间键合材料，配合硅烷偶联剂(APTS)，在键合界面实现了“锚定结构”，降低了键合层的孔隙率，改善了氟树脂的粘结性能，使得0.1%氧化石墨烯掺杂氟树脂层的粘结强度提高4倍以上，深紫外LED光功率提高15%，且改善了深紫外LED的光热性能和长期稳定性。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "除了应用半球形透镜和氟树脂封装层外，表面粗化也是抑制芯片表面全反射的有效方法，其机理是通过表面粗化结构来改变光线路径，使反射光散射出去。美国堪萨斯州立大学Jiang等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "73",
"type": "bibr",
"rid": "R73",
"data": [
{
"name": "text",
"data": "73"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "利用光刻和刻蚀技术对深紫外LED倒装芯片的蓝宝石衬底进行图案化处理，在蓝宝石衬底表面制备了微透镜阵列的表面粗化结构，微透镜阵列结构有效降低了芯片表面全反射，使深紫外LED光功率提高55%;但是，刻蚀工艺对芯片晶体结构影响较大，易损坏芯片光电性能。为了避免对芯片的直接加工，本课题组提出微透镜阵列氟树脂封装层用于深紫外LED芯片表面全反射抑制"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "74",
"type": "bibr",
"rid": "R74",
"data": [
{
"name": "text",
"data": "74"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "(如"
},
{
"name": "xref",
"data": {
"text": "图15(a)、(b)",
"type": "fig",
"rid": "F15",
"data": [
{
"name": "text",
"data": "图15(a)、(b)"
}
]
}
},
{
"name": "text",
"data": ")，采用主动制冷水滴凝结法制作多孔模板，并以该多孔模板在氟树脂层上微成型不同曲率半径的微透镜阵列。该方法具有简单、成本低、高效等优点;通过微透镜阵列的散射作用，增大了深紫外LED芯片的光输出临界角，降低了全反射损耗。结果表明，相比光滑表面封装结构，3种不同曲率微透镜阵列封装结构的光功率分别增加了7.1%、10.2%和15.4%。此外，华中科技大学Dai等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "75",
"type": "bibr",
"rid": "R75",
"data": [
{
"name": "text",
"data": "75"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "采用干法刻蚀与湿法刻蚀相结合的方法在平面蓝宝石片上制备了纳米透镜阵列，通过控制刻蚀工艺参数获得了不同结构尺寸的纳米透镜阵列，并将其用于抑制深紫外LED芯片表面全反射损耗;与平面结构封装层相比，纳米透镜阵列结构封装层使得深紫外LED光功率最大提高24.7%，发射角增加14°。除了全反射损耗外，深紫外LED芯片表面还存在菲涅尔反射损耗，也会降低深紫外LED光效。为了降低菲涅尔反射损耗，美国伦斯勒理工学院Yan等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "76",
"type": "bibr",
"rid": "R76",
"data": [
{
"name": "text",
"data": "76"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "采用斜角沉积方法在芯片蓝宝石衬底上制备了全方向抗反射薄膜涂层，实现了蓝宝石衬底到空气的渐变折射率过渡，使深紫外LED光提取效率提高8%。"
}
]
},
{
"name": "fig",
"data": {
"id": "F15",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图15"
}
],
"title": [
{
"name": "text",
"data": "不同微透镜阵列氟树脂层封装的深紫外LED。(a)光谱强度;(b)光功率"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "74",
"type": "bibr",
"rid": "R74",
"data": [
{
"name": "text",
"data": "74"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.15"
}
],
"title": [
{
"name": "text",
"data": "Spectra(a) and light output power(b) of DUV-LEDs packaged by fluororesin microlenses"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "74",
"type": "bibr",
"rid": "R74",
"data": [
{
"name": "text",
"data": "74"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
}
]
}
],
"subcaption": [],
"note": [],
"graphics": [
{
"print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349966&type=",
"small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349970&type=",
"big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349968&type="
}
]
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "针对AlGaN基深紫外LED来说，TM偏振光传播到芯片侧面也会出现反射损耗问题，影响深紫外LED光效。中科院半导体所Wang等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "77",
"type": "bibr",
"rid": "R77",
"data": [
{
"name": "text",
"data": "77"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "利用激光切割技术对深紫外LED芯片的蓝宝石衬底侧壁进行粗化处理，通过仿真和实验揭示了蓝宝石侧壁的有效粗化区域，在该区域内能够抑制反射损耗和提高光子逃逸;但这是对芯片直接加工，工艺相对复杂，且仅能实现侧壁光提取。为此，华中科技大学Dai等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "78",
"type": "bibr",
"rid": "R78",
"data": [
{
"name": "text",
"data": "78"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "提出一种蛾眼纳米阵列柔性氟树脂薄膜(F"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "MF)，用于同时抑制深紫外LED上表面和侧壁反射损耗，增强TE和TM模式光提取(如"
},
{
"name": "xref",
"data": {
"text": "图16",
"type": "fig",
"rid": "F16",
"data": [
{
"name": "text",
"data": "图16"
}
]
}
},
{
"name": "text",
"data": ");与传统封装相比，在200 mA电流下，F"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "MF封装深紫外LED光功率提高26.7%，且由于F"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "MF可以同时贴合在芯片上表面和侧面，使得深紫外LED的TE和TM偏振光分别提高20.5%和21.8%。"
}
]
},
{
"name": "fig",
"data": {
"id": "F16",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图16"
}
],
"title": [
{
"name": "text",
"data": "(a)~(c)纳米阵列模板与F"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "MF的制备工艺及其实物图;(d)不同纳米尺寸F"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "MF封装深紫外LED光功率;(e)F"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "MF(325 nm)封装深紫外LED光强分布"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "78",
"type": "bibr",
"rid": "R78",
"data": [
{
"name": "text",
"data": "78"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.16"
}
],
"title": [
{
"name": "text",
"data": "(a)-(c)Preparation processes and pictures of nano-array template and F"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "MF. (d)Light power of DUV-LEDs packaged by F"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "MF with various sizes. (e)Light distribution of DUV-LEDs packaged by F"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "MF"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "78",
"type": "bibr",
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"data": [
{
"name": "text",
"data": "78"
}
]
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},
{
"name": "text",
"data": "]"
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},
{
"name": "text",
"data": "."
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"data": [
{
"name": "text",
"data": "此外，由于石英玻璃与空气间的折射率差，平面玻璃盖板上、下表面存在菲涅尔反射。目前抑制菲涅尔反射主要有薄膜涂层和纳米结构两种方法。薄膜涂层是采用单层或多层薄膜的相消干涉作用抑制反射，但该方法仅适合窄光谱和小入射角的抗反射，且需要严格控制膜层折射率、厚度、质量等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "79",
"type": "bibr",
"rid": "R79",
"data": [
{
"name": "text",
"data": "79"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "80",
"type": "bibr",
"rid": "R80",
"data": [
{
"name": "text",
"data": "80"
}
]
}
}
],
"rid": [
"R79",
"R80"
],
"text": "79-80",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": ";纳米结构具有良好的抗反射性，亚波长纳米结构可在界面形成渐变折射率介质层，使入射光由一种介质平滑地入射到另一种介质，有效降低了菲涅尔反射"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "81",
"type": "bibr",
"rid": "R81",
"data": [
{
"name": "text",
"data": "81"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "82",
"type": "bibr",
"rid": "R82",
"data": [
{
"name": "text",
"data": "82"
}
]
}
}
],
"rid": [
"R81",
"R82"
],
"text": "81-82",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。本课题组在平面石英玻璃盖板上、下表面同时制备纳米结构"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "83",
"type": "bibr",
"rid": "R83",
"data": [
{
"name": "text",
"data": "83"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，为了获得亚波长(深紫外波段)纳米结构，利用金薄膜快速热退火制作了金纳米掩模，并结合干法刻蚀在玻璃表面制备了平均高度和周期分别为140 nm和90 nm的蛾眼状纳米结构，双面纳米结构化玻璃盖板的深紫外透光率高达97.2%，其封装的深紫外LED光功率提高8.6%。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "对于深紫外LED气密封装而言，虽然采用三维陶瓷基板能够提高器件散热性能，但由于陶瓷基板围坝内壁(陶瓷或铜材料等)在深紫外波段反射率低，导致芯片侧壁出光难以有效提取(被封装材料吸收)，影响深紫外LED光效"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "84",
"type": "bibr",
"rid": "R84",
"data": [
{
"name": "text",
"data": "84"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "85",
"type": "bibr",
"rid": "R85",
"data": [
{
"name": "text",
"data": "85"
}
]
}
}
],
"rid": [
"R84",
"R85"
],
"text": "84-85",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。鉴于金属铝对深紫外光的高反射率("
},
{
"name": "text",
"data": ">"
},
{
"name": "text",
"data": "90%)，研究者在三维封装基板的侧壁和底部镀铝层，通过铝反射作用提高深紫外LED光提取"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "86",
"type": "bibr",
"rid": "R86",
"data": [
{
"name": "text",
"data": "86"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "87",
"type": "bibr",
"rid": "R87",
"data": [
{
"name": "text",
"data": "87"
}
]
}
}
],
"rid": [
"R86",
"R87"
],
"text": "86-87",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。此外，本课题组提出采用铝反射杯来代替铜围坝用于深紫外LED封装"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "88",
"type": "bibr",
"rid": "R88",
"data": [
{
"name": "text",
"data": "88"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，通过仿真分析优化了铝反射杯结构尺寸和倾角。在三种铝反射杯结构中，铝内壁分别为70%漫反射、80%漫反射和92%镜面反射，在电流100 mA下深紫外LED光功率分别提高28.8%、37.0%和43.8%，这一结果表明铝反射杯能有效地提高深紫外LED侧壁出光。中国台湾交通大学Kuo等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "89",
"type": "bibr",
"rid": "R89",
"data": [
{
"name": "text",
"data": "89"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "采用板级铝反射杯实现了深紫外LED批量封装(如"
},
{
"name": "xref",
"data": {
"text": "图17",
"type": "fig",
"rid": "F17",
"data": [
{
"name": "text",
"data": "图17"
}
]
}
},
{
"name": "text",
"data": ")，不仅提高了封装效率，且利用高镜面铝反射杯增强了芯片侧壁出光提取，相对于传统陶瓷围坝封装，铝反射杯封装的深紫外LED光功率提高18.38%。虽然铝反射杯能够提高深紫外LED光效，但封装过程中需要考虑铝反射杯与陶瓷基板、石英盖板间可靠键合等问题。"
}
]
},
{
"name": "fig",
"data": {
"id": "F17",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图17"
}
],
"title": [
{
"name": "text",
"data": "深紫外LED板级封装工艺流程"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "89",
"type": "bibr",
"rid": "R89",
"data": [
{
"name": "text",
"data": "89"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.17"
}
],
"title": [
{
"name": "text",
"data": "Wave-level packaging process of DUV-LEDs with aluminum reflector"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "89",
"type": "bibr",
"rid": "R89",
"data": [
{
"name": "text",
"data": "89"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
}
]
}
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{
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"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "3.2 提高可靠性"
}
],
"level": "2",
"id": "s3b"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "虽然前述深紫外LED采用全无机气密封装能够避免封装材料老化、紫外降解等问题，并消除外界环境中不利因素的影响，但深紫外LED可靠性仍会受到封装结构散热性能影响。由于深紫外LED光效较低，绝大部分电能转换为热量，且随着多芯片集成密度增加，单位面积会产生更多热量，热量聚集会引起深紫外LED结温升高，进而影响深紫外LED的工作寿命。为此，研究者利用封装结构优化和有效热管理等方法强化深紫外LED散热性能，提高了深紫外LED的可靠性。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "为了降低深紫外LED结温，有必要对封装结构进行优化，从而降低封装热阻。其中，芯片固晶层、封装基板的热导率直接影响封装热阻。目前，紫外LED芯片常利用金锡共晶键合工艺来实现与封装基板间可靠键合，相较于其他芯片贴装工艺，金锡共晶键合的可靠性高、热学性能好，但是共晶键合层会存在空洞，高空洞率会影响紫外LED光热性能。华中科技大学Dai等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "90",
"type": "bibr",
"rid": "R90",
"data": [
{
"name": "text",
"data": "90"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "91",
"type": "bibr",
"rid": "R91",
"data": [
{
"name": "text",
"data": "91"
}
]
}
}
],
"rid": [
"R90",
"R91"
],
"text": "90-91",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "利用金锡共晶键合工艺实现了紫外LED芯片的低空洞率和低热阻键合，对比分析了不同空洞率的共晶键合层对紫外LED热学性能的影响。结果发现，当空洞率从30%降到3%时，紫外LED热阻和结温分别降低48%和3.5 ℃。另一方面，高导热氮化铝(AlN)陶瓷基板被用于深紫外LED封装，利用AlN材料的高导热特性将芯片产生的热量快速传导到散热翅片和周围环境，从而提高了器件可靠性。为了进一步提高AlN陶瓷基板散热性能，华中科技大学Dai等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "92",
"type": "bibr",
"rid": "R92",
"data": [
{
"name": "text",
"data": "92"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "通过在AlN陶瓷基板上设计导热铜孔，并将其应用于深紫外LED封装，仿真和实验分析了导热铜孔数量对深紫外LED热阻和结温的影响。结果发现，随着导热铜孔数量增加，深紫外LED热阻和结温逐渐降低，相对于普通AlN陶瓷基板封装，含导热铜孔(4×4分布)AlN陶瓷基板封装的深紫外LED热阻降低34.6%，结温降低7.3 ℃。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "目前，深紫外LED芯片贴装在三维封装基板腔体内，腔体内一般是空气或惰性气体，由于空气热导率低，导致芯片产生的热量只能向下通过封装基板耗散出去。中国台湾交通大学Kuo等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "93",
"type": "bibr",
"rid": "R93",
"data": [
{
"name": "text",
"data": "93"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "94",
"type": "bibr",
"rid": "R94",
"data": [
{
"name": "text",
"data": "94"
}
]
}
}
],
"rid": [
"R93",
"R94"
],
"text": "93-94",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "提出一种液体封装技术用于深紫外LED封装，利用导热硅油填充三维封装基板腔体，使芯片热量能够通过硅油向外传导。相比于现有空腔封装，硅油封装深紫外LED热阻降低30.3%，提高了深紫外LED的可靠性，且采用硅油作为中间折射率层，减小了芯片界面折射率差，使平面透镜和半球形透镜封装的深紫外LED光功率分别提高27.2%和70.7%。澳大利亚塔斯马尼亚大学Paull等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "95",
"type": "bibr",
"rid": "R95",
"data": [
{
"name": "text",
"data": "95"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "通过3D打印技术制备了微流通道装置，并将该环形微流通道紧密安装于深紫外LED周围，通过在微流通道中注入循环冷水实现了深紫外LED主动液体冷却，深紫外LED工作温度降低22°C，且可靠性和稳定性明显改善。此外，智利圣地亚哥大学Fredes等"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "96",
"type": "bibr",
"rid": "R96",
"data": [
{
"name": "text",
"data": "96"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "设计了一种热电控制装置用于深紫外LED散热，通过热电制冷器的主动散热有效降低了深紫外LED热阻，提高了器件可靠性。"
}
]
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "4 深紫外LED封装技术发展趋势"
}
],
"level": "1",
"id": "s4"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "目前，深紫外LED技术取得了长足的发展，但是与近紫外和蓝光LED相比，深紫外LED仍面临光效低、可靠性差和成本高等问题，尚难以满足大规模应用需求。为了进一步提高深紫外LED光效和可靠性，深紫外LED封装技术仍有许多值得研究的方向，包括但不限于:"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "(1)新型封装材料和封装结构探索。虽然玻璃封装技术能够提高深紫外LED可靠性，但仍存在光损耗、热应力大、工艺复杂、成本高等问题，迫切需要研发耐紫外光、高紫外透过率和低温固化的封装材料，以避免玻璃封装存在的上述问题，从而降低光损耗和工艺复杂度，提高深紫外LED光效;研发高导热、高强度、低温键合高温服役的焊接材料用于深紫外LED封装，以避免焊接温度对芯片的不利影响，降低深紫外LED结温并提高器件散热性能;通过封装结构设计与优化手段开发高光提取和高散热的深紫外LED封装结构，从而提高深紫外LED器件的光热性能。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "(2)高集成深紫外LED封装工艺开发。目前针对单颗深紫外LED芯片的全无机气密封装工艺相对成熟，未来深紫外LED必然向着大规模、多芯片、集成化、低成本等方向发展，有必要开发高集成深紫外LED封装工艺来满足深紫外LED发展需求，包括芯片到晶圆(C2W)、晶圆到晶圆(W2W)等板级封装工艺，针对板级封装工艺主要考虑板级对准、键合和切割等关键技术以及产品一致性和合格率等问题。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "(3)深紫外LED封装协同设计强化。目前深紫外LED技术的各个环节间相互独立，导致芯片设计、封装技术和器件应用间相互脱节，使得最终深紫外LED难以满足应用过程中的光学性能和可靠性需求。因此，有必要对深紫外LED芯片、封装和应用进行协同设计，在芯片设计、封装技术和器件应用这三个阶段间相互联系和反馈，并利用仿真模拟、可靠性测试等手段对封装性能进行优化分析，从而开发针对不同应用领域的深紫外LED器件。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "5 结束语"
}
],
"level": "1",
"id": "s5"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "深紫外LED具有环保无汞、寿命长、功耗低、响应快、结构轻巧等优点，在杀菌消毒、生化检测、医疗健康、隐秘通讯等领域具有重要应用价值。近年来，深紫外LED技术取得了长足的进步，主要体现在光效和可靠性不断提高，这不仅得益于芯片外延材料和掺杂技术的进步，也归功于器件封装技术的发展。由于深紫外光波长短且能量高，使得深紫外LED对封装材料、结构与工艺均有特殊要求，传统有机材料封装技术难以满足深紫外LED封装需求。为此，国内外研究者对深紫外LED封装技术进行了深入研究，从封装角度提高了深紫外LED的光效和可靠性。本文系统探讨了深紫外LED封装材料、结构和工艺中使用的关键技术，包括石英玻璃盖板、三维陶瓷基板、气密封装结构、低温焊接工艺、反射光损耗以及结温和热管理等。同时从封装角度阐述了深紫外LED光效和可靠性的最新研究进展，通过抑制反射光损耗和增强光提取提高深紫外LED光效，通过优化封装结构和有效热管理改善深紫外LED的可靠性。此外，对深紫外LED封装技术的发展趋势进行了阐述，包括新型封装材料和封装结构、高集成封装工艺、强化封装设计等发展方向。本文对深紫外LED封装技术进行了系统总结和展望，这将有助于高光效、高可靠深紫外LED设计和制造，促进深紫外LED技术的发展。"
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]
}
]
}
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