Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells <italic style="font-style: italic">via</italic> MOCVD Technology

Xu WANG; Hai-zhu WANG; Bin ZHANG; Qu-hui WANG; Jie FAN; Yong-gang ZOU; Xiao-hui MA

doi:10.37188/CJL.20200379

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Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology

Synthesis and Properties of Materials | Updated：2021-04-23

- Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology
- Chinese Journal of Luminescence Vol.42, Issue 4, (2021)
- Affiliations：
  
  State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology,Changchun,China,130022
- Author bio：
- Funds：
  
  Jilin Science and Technology Development Plan(20190302052GX)
- DOI：10.37188/CJL.20200379 CLC： TN304.2
- Published：01 April 2021，
  
  Received：12 December 2020，
  
  Revised：04 January 2021，
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Xu WANG, Hai-zhu WANG, Bin ZHANG, et al. Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology. [J]. Chinese Journal of Luminescence 42(4):448-454(2021)
DOI：

Xu WANG, Hai-zhu WANG, Bin ZHANG, et al. Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology. [J]. Chinese Journal of Luminescence 42(4):448-454(2021) DOI： 10.37188/CJL.20200379.

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"data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As/GaAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "P" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "多量子阱结构;通过PL、XRD、AFM测试对比发现，高势垒GaAsP材料的张应变补偿可以改善晶体质量。综合比较，在P组分为0.184时，PL波长1 043.6 nm，半峰宽29.9 nm,XRD有多级卫星峰且半峰宽较小，AFM粗糙度为0.130 nm，表面形貌显示为台阶流生长模式。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The large mismatched InGaAs multiple quantum wells on GaAs substrates were prepared by metal-organic chemical vapor deposition(MOCVD) technology. In order to solve the large lattice mismatch between InGaAs and GaAs, the GaAsP strain compensation layer structure was designed. And our systematically theoretical and experimental studies were performed upon the composition adjustment of P in the GaAsP materials. The three-periods In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As/GaAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "P" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": " multi-quantum wells structures with the P component of 0, 0.128, 0.184, and 0.257 were prepared. Compared with PL, XRD, AFM testing results of the samples with and without GaAsP layer, it is found that tensile strain compensation of higher barrier GaAsP material could improve the crystal quality. When the content of P was 0.184, the PL wavelength of InGaAs/GaAsP MWQs was 1 043.6 nm, the FWHM was 29.9 nm. The XRD peaks had multi-level satellite peaks, and the FWHM of the satellite peaks was small. The AFM roughness was 0.130 nm, and the surface morphology showed a step flow growth mode." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "金属有机化学气相沉积" } ], [ { "name": "text", "data": "InGaAs/GaAsP" } ], [ { "name": "text", "data": "应变补偿" } ], [ { "name": "text", "data": "多量子阱" } ], [ { "name": "text", "data": "晶格失配" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "metal-organic chemical vapour deposition(MOCVD)" } ], [ { "name": "text", "data": "InGaAs/GaAsP" } ], [ { "name": "text", "data": "strain compensation" } ], [ { "name": "text", "data": "multiple quantum wells" } ], [ { "name": "text", "data": "lattice mismatch" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体激光器具有体积小、重量轻、可靠性高、使用寿命长、功耗低等方面的优势，近几年在很多领域得到了广泛的研究和应用，其中近红外波段更是研究的重点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在近红外的8701 100 nm波段，对于GaAs基半导体激光器来说，有源区需要采用InGaAs应变量子阱得以实现。发光波长越长，量子阱结构需要越小的带隙材料。In含量的增多意味着存在较大的晶格失配，高应变会使薄膜更容易产生缺陷" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，进而影响晶体质量，甚至影响器件的性能和寿命。前期的研究发现，当In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As量子阱中In含量大于0.25时，其外延生长中会出现层-层生长模式向层-岛生长模式的转变" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而对于获得高质量的外延材料来说，二维台阶流生长模式是首选的生长模式" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于高应变InGaAs量子阱外延生长的研究，多采用应变补偿的方式减小或消除应力的影响，其中InGaAs/GaAsP应变补偿多量子阱结构被设计并广泛应用在光电半导体器件领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R6", "R7" ], "text": "6-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了获得高质量的InGaAs量子阱外延材料，利用GaAsP拉伸应变材料作为势垒层，抵消高In组分InGaAs的压缩应变，降低材料的平均净应变，可以避免由于应变积累引起的晶格弛豫和三维生长。同时，GaAsP材料有更高的带阶，对载流子具有更好的限制作用和高温特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R8", "R9" ], "text": "8-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在InGaAs高应变量子阱外延生长研究方面，国内外文献都有报道。2005年，Sass等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "报道，对于具有晶格失配Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "=9.3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "和临界厚度15 nm厚度的In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.13" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.87" } ] }, { "name": "text", "data": "As/GaAs(001)体系，外延层超过4.5倍的临界厚度时开始弛豫。2010年，日本东京大学Wang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在通过原位表面反射率监测In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.217" } ] }, { "name": "text", "data": "-Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.783" } ] }, { "name": "text", "data": "As/GaA" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348948&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348955&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348950&type=" } } } ] }, { "name": "text", "data": "P" }, { "name": "sub", "data": [ { "name": "text", "data": "0.384" } ] }, { "name": "text", "data": "多量子阱生长过程中，发现当应变平衡不完全时，多量子阱(Multiple quantum wells,MQWs)的表面反射率会下降，表明晶格弛豫会降低晶体生长质量。2014年，长春理工大学高功率半导体激光国家重点实验室戴银等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用低压金属有机化学气相沉积技术生长高应变InGaAs/GaAs单量子阱，通过改变生长速率、优化生长温度和Ⅴ/Ⅲ，改善量子阱样品的室温光致发光特性。2019年，美国伯利恒理海大学Sun等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在高应变InGaAs量子阱的厚度接近临界厚度时，研究了GaAsP拉伸约束势垒对InGaAs/GaAs MQWs中部分应变弛豫的抑制作用。由此可见，关于GaAsP材料应变补偿的研究工作还有待进一步的探索。因此，本文针对大失配InGaAs量子阱半导体激光器外延生长技术的需求，开展InGaAs/GaAsP MQWs外延生长的研究。为了探究不同应力下InGaAs量子阱的外延晶体质量，通过金属有机化学气相沉积(MOCVD)技术，优化有源区多量子阱整体平均失配状态，分析对外延样品晶体质量的影响，并获得了外延晶体质量较好的生长参数，为改善高应变InGaAs量子阱的应力积累提供技术支撑。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　外延结构设计及生长" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "为了研究大失配下薄膜材料的生长参数，设计了InGaAs/GaAs应变多量子阱结构，量子阱个数为3，其中阱垒层厚度分别为9 nm和13 nm。利用Crosslight软件进行前期模拟，并结合前期的实验结果，调整InGaAs量子阱中In的组分，使其发光波长在1.04 μm附近。保持InGaAs阱层材料In的组分、厚度以及垒层厚度不变，搭配不同P组分的GaAsP垒层材料，探索GaAs(P)垒层材料对量子阱发光的影响。同时，通过调整GaAsP材料中P的组分，进而改变了整个结构系统的累积应变状态，观测其对外延生长质量的作用。本文选取三周期的In" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As/GaAs" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "P" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "=0.274;" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "=0,0.128,0.184,0.257)应变补偿多量子阱(以下简称多量子阱)结构进行实验对比。并通过模型固体理论" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } } ], "rid": [ "R14", "R15", "R16" ], "text": "14-16", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "对量子阱能带的带边能量进行计算，获得了导带和价带的带阶，如公式(1)和(2):" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348959&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348963&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348967&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "表示导带的带阶，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348971&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348979&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348974&type=" } } } ] }, { "name": "text", "data": "表示垒层材料GaAs(P)的导带的应变带边能量，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348986&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348996&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21348991&type=" } } } ] }, { "name": "text", "data": "表示阱层材料InGaAs的导带的应变带边能量。" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349000&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349003&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349007&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "v" } ] }, { "name": "text", "data": "表示价带的带阶，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349011&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349020&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349015&type=" } } } ] }, { "name": "text", "data": "表示阱层材料InGaAs的价带的应变带边能量，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349025&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349033&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349029&type=" } } } ] }, { "name": "text", "data": "表示垒层材料GaAs(P)的价带的应变带边能量。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "此外，计算了平均失配，给出了平均应变计算公式:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349037&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349041&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349045&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF3" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "w" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": "分别表示阱、垒材料的层数，" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "w" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": "分别表示阱、垒的厚度，" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "w" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": "分别表示阱、垒材料与衬底的失配度，" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "text", "data": "表示量子阱的平均失配度。获得的具体信息如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "理论结果:无应变时的材料带隙(300 K)、带边能量(导带、重空穴带、轻空穴带)、导带和价带的带阶、平均应变" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Theoretical results: material band gap(300 K), band edge energy(conduction band, heavy hole band, light hole band), band offset and average strain" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "2", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { 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solid #000;", "data": [ { "name": "text", "data": "272.62" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "0.258 4" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349053&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349050&type=" } } }, { "name": "p", "data": [ { "name": "text", "data": "根据阱垒材料不连续的能量位置，绘制了不同P组分的InGaAs/GaAsP应变补偿量子阱的能带连接图，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "不同P含量InGaAs/GaAsP应变补偿量子阱的能带连接图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Energy band connection diagram of InGaAs/GaAsP strain compensation quantum wells with different P contents" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349057&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349066&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349061&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "从" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "均可发现，随着势垒P组分的增加，导带和价带带阶也会增加，从而可以增强对载流子的限制作用。并且，较于GaAs(" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0)作垒，GaAsP应变补偿层的引入减小了整个样品的净压应变，使样品的平均失配减小且平均失配随P组分增加而减小。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "同时，在应变系统中产生缺陷的临界厚度也被参考用于设计外延层结构中。基于Matthews-Blakeslee理论" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和设计的InGaAs/GaAsP量子阱参数信息，计算了InGaAs/GaAsP量子阱的平均应变和临界厚度的关系。具体平均应变可以通过公式(3)算出，临界厚度" }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "也可以通过下列公式得到:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349069&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349072&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349076&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF4" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "为应变层的晶格常数;系数" }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "text", "data": "在应变层超晶格、单量子阱和单应变层三种情况下分别为1,2,4;" }, { "name": "italic", "data": [ { "name": "text", "data": "ε" } ] }, { "name": "text", "data": "=Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "为失配度;" }, { "name": "italic", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "为泊松比，" }, { "name": "italic", "data": [ { "name": "text", "data": "ν=c" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "/" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "11" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "+c" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": ")。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示，其中In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.274" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.726" } ] }, { "name": "text", "data": "As/GaAs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.743" } ] }, { "name": "text", "data": "-P" }, { "name": "sub", "data": [ { "name": "text", "data": "0.257" } ] }, { "name": "text", "data": "和In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.274" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.726" } ] }, { "name": "text", "data": "As/GaAs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.816" } ] }, { "name": "text", "data": "P" }, { "name": "sub", "data": [ { "name": "text", "data": "0.184" } ] }, { "name": "text", "data": "多量子阱厚度在临界厚度以下，而In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.274" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.726" } ] }, { "name": "text", "data": "As/GaAs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.743" } ] }, { "name": "text", "data": "-P" }, { "name": "sub", "data": [ { "name": "text", "data": "0.128" } ] }, { "name": "text", "data": "和In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.274" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.726" } ] }, { "name": "text", "data": "As/GaAs的厚度分别在三周期、两周期时超过临界厚度。而当外延层厚度超出临界厚度时，外延晶体质量将会大幅度降低。为了进一步验证InGaAs/GaAsP多量子阱的生长质量，我们利用MOCVD生长技术，从实验方面进行了更加详细的研究。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "InGaAs/GaAsP量子阱的平均应变和临界厚度" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Average strain and critical thickness of InGaAs/GaAsP quantum wells" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349081&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349089&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349084&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "利用德国AIXTRON公司的200/4型MOCVD设备开展大失配InGaAs/GaAsP多量子阱外延生长研究，以TMIn、TMGa和AsH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、PH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "为Ⅲ 族源和Ⅴ族源，H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为载气，在反应室压力保持在10 000 Pa(100 mbar)条件下进行生长实验。同时，量子阱材料的生长温度为600 ℃,InGaAs和GaAs(P)的Ⅴ/Ⅲ分别为51和115。在前期生长速率的实验方面，我们已经获得了InGaAs和GaAs(P)两种材料生长速率分别为0.244 nm/s和0.175 nm/s,P组分0,0.128,0.184,0.257对应的气相体积比PH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/(AsH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "+PH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")为0%、65%、73%、80%。选取5.08 cm(2 in)(001)取向的n型GaAs 0°偏角衬底，首先生长300 nm GaAs缓冲层，接着生长3个周期InGaAs/GaAsP多量子阱(阱层和垒层厚度分别为9,13 nm)，最后生长50 nm GaAs盖层，结构如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "应变补偿量子阱外延结构" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Strain compensation quantum wells epitaxial structure" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349092&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349100&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349096&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　实验结果与分析" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　不同P组分的多量子阱PL光谱分析" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "给出了不同P组分的多量子阱样品的室温PL测试结果。在" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "中，可以明显地观察到在室温条件下，所有被测样品的发光峰都在1 043.6 nm附近。并且随着GaAsP材料中P组分增加，发现被测样品的发光波长略有蓝移但不明显。而且，在950 nm波长附近观察到一个发光强度较弱的峰。通过相关文献的研究报道，考虑应该是导带第一子能级和价带轻空穴带第一子能级(c1-lh1)能带之间跃迁所致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R18", "R19", "R20" ], "text": "18-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "不同P组分多量子阱的光致发光测试结果" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Photoluminescence test results of multiple quantum wells with different P components" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349103&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349108&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349106&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "同时，为了进一步比较差异，我们对不同P组分的多量子阱样品的室温PL光谱测试结果进行了分析，结果如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。从发光强度的角度进一步考虑，如果GaAsP材料中P组分越高，势垒就越高，对载流子的限制能力越强，相应地就会增强InGaAs/GaAsP多量子阱的发光强度。从" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "中我们可以明显发现，不同P组分的多量子阱的发光强度确实随P组分增加而增强。随着GaAsP材料中P组分从0.128增加到0.257，发光峰的半峰宽依次为37.8,29.9,31.4 nm，而相同生长条件下外延的InGaAs/GaAs多量子阱样品的发光峰半峰宽是39.1 nm。从样品测试的半峰宽可以分析出，相较于GaAs作垒(" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0),InGaAs/GaAsP 多量子阱样品的发光峰半峰宽有一个明显的减小，尽管P组分为0.257略微增加，但半峰宽整体呈现出下降趋势。从发光峰半峰宽减小的角度可以推断出，随着GaAsP应变补偿程度的增加，阱垒材料的异质界面粗糙程度在变小，减少了界面质量对发光谱的展宽影响。通过强度、半峰宽与P组分的关系的综合对比发现，样品In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.274" } ] }, { "name": "text", "data": "-Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.726" } ] }, { "name": "text", "data": "As/GaAs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.816" } ] }, { "name": "text", "data": "P" }, { "name": "sub", "data": [ { "name": "text", "data": "0.184" } ] }, { "name": "text", "data": "多量子阱的PL光谱半峰宽最窄，In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.274" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.726" } ] }, { "name": "text", "data": "As/GaAs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.743" } ] }, { "name": "text", "data": "P" }, { "name": "sub", "data": [ { "name": "text", "data": "0.257" } ] }, { "name": "text", "data": "多量子阱的PL光谱发光强度最高。与GaAs(" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0)势垒相比，GaAsP势垒可以提高样品的光学性能。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同P组分与光致发光半峰宽和强度关系" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Relationship between different P components and photoluminescence half-width and intensity" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349111&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349119&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349116&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　不同P含量的多量子阱XRD分析" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步验证上述推断，我们又对InGaAs/GaAsP多量子阱样品的生长质量进行了进一步表征。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "给出了不同P组分(0,0.128,0.184,0.257)的InGaAs/GaAsP多量子阱样品在" }, { "name": "italic", "data": [ { "name": "text", "data": "ω" } ] }, { "name": "text", "data": "-2" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "摇摆曲线测试条件下的XRD测试结果，其中，曲线强度最高最尖锐的峰对应于GaAs衬底(004)的Bragg衍射峰，并且均出现了多级衍射峰。通过公式(5)可以计算多量子阱周期厚度:" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同P组分的XRD测试结果" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "XRD test results of different P components" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349122&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349128&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349125&type=" } ] } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(5)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349131&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349133&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349136&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF5" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "代表周期厚度，" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "为X射线波长，Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "为多量子阱衍射峰角间距，" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "sub." } ] }, { "name": "text", "data": "为GaAs衬底的Bragg 衍射角。结合对XRD测试结果的计算，我们可以计算出P组分为0,0.128,0.184,0.257时，InGaAs/GaAsP多量子阱样品的周期厚度分别为21.5,22.1,21.8,22.3 nm，基本符合预期厚度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过对InGaAs/GaAsP多量子阱样品卫星峰的半峰宽数据分析，得到P组分在0,0.128,0.184,0.257时，GaAs主峰左侧(31.5°32.5°)相同级次的卫星峰半峰宽分别约为324,270,241,238 arcsec。半峰宽越小表明InGaAs/GaAsP多量子阱样品具有越好的晶体质量。P组分在0.184和0.257时有较小半峰宽，其质量较好，并且与" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "中PL光谱半峰宽分析的测试结果一致。另外，对于样品测试的卫星峰可以分析出，P组分在0,0.128,0.184,0.257时，GaAs主峰左侧分别含有5,6,8,7个卫星峰;P组分为0和0.128时，最左侧(31°31.5°)高阶卫星峰不明显。对比P组分0.184和0.257卫星峰可以发现，理论上相邻卫星峰间距是相等的，但在P组分0.257时，31.2°附近卫星峰明显缺级，猜测可能是界面粗糙导致的。对4组样品的XRD测试信息(卫星峰数量和半峰宽)进行比较，P组分为0.184的多量子阱结构有较好的晶体质量，这与之前PL光谱半峰宽的测试结果一致。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　不同P含量的多量子阱AFM分析" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步分析样品的外延质量，我们还对不同P组分的样品进行了原子力显微镜(Atomic force microscope,AFM)测试，结果如" }, { "name": "xref", "data": { "text": "图7(a)~(d)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)~(d)" } ] } }, { "name": "text", "data": "所示，其表面形貌显示为InGaAs/GaAsP多量子阱样品的生长模式。当P组分为0时，样品平均失配率最大，达到0.8031%，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "临界厚度结果给出那样，超过临界厚度过多，此时台阶边缘弯曲，并在台阶边缘出现二维(2D)小岛，如" }, { "name": "xref", "data": { "text": "图7(a)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)" } ] } }, { "name": "text", "data": "所示。此时AFM测试结果的粗糙度较大，达到0.171 nm。如" }, { "name": "xref", "data": { "text": "图7(b)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(b)" } ] } }, { "name": "text", "data": "所示，当引入GaAsP作为势垒层后，P组分在0.128时，总压应变有所抵消，二维小岛有所减少，但台阶形状仍没有改善，此时粗糙度为0.168 nm，数值略有减小。与" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "给出的临界厚度的理论计算结果一致，" }, { "name": "xref", "data": { "text": "图7(a)、(b)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)、(b)" } ] } }, { "name": "text", "data": "中样品的多量子阱结构外延厚度均超出了临界厚度，不均匀应变使其形貌上呈现出二维小岛，说明已经发生晶格弛豫，生长的多量子阱外延层局部高应变区域以形成2D小岛的方式得到释放。同时随着继续生长，吸附原子为了降低材料体系的表面能，倾向于在2D小岛的台阶边缘而不是顶部成核，因此，岛屿将横向增长" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "不同P组分样品的AFM测试结果。(a)" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0;(b)" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0.128;(c)" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0.184;(d)" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0.257。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "AFM test results of different P components samples. (a)" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0. (b)" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0.128. (c)" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0.184. (d)" }, { "name": "italic", "data": [ { "name": "text", "data": "y" } ] }, { "name": "text", "data": "(P)=0.257。" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349139&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349144&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349142&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "而当P组分为0.184时，台阶边缘近乎平行，台阶高度均在0.36 nm以内，为一个分子层(Monolayer,ML)高度，可以认为是台阶流生长模式，如" }, { "name": "xref", "data": { "text": "图7(c)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(c)" } ] } }, { "name": "text", "data": "所示。通过AFM的测试结果可以发现，此时粗糙度最小，粗糙度为0.130 nm。随着P组分继续增加，在P组分为0.257时，粗糙度为0.148 nm，如" }, { "name": "xref", "data": { "text": "图7(d)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(d)" } ] } }, { "name": "text", "data": "所示。结合之前的PL、XRD分析结果，推断是随着生长时PH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的流量增加，在InGaAs外延层上生长GaAsP材料后的异质界面，更多的P扩散以及In的表面偏析" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } } ], "rid": [ "R22", "R23" ], "text": "22-23", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使异质界面变得粗糙。总体来看，P组分0.184时表面形貌最好，0.257次之，0.128,0较差。并且可以分析出，P组分为0.257时，尽管相较0.184粗糙度有所增加，但仍比整体存在较大应力的P组分为0和0.128时晶体质量要好，说明更高的P组分的应变补偿有助于缓解应力积累，获得较好的表面形貌。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用理论计算和实验相结合的方式，利用MOCVD生长技术，开展了大失配InGaAs/GaAsP多量子阱外延生长技术的研究。通过保持量子阱的InGaAs组分和厚度参数一定，调整垒层GaAsP材料的P含量，进而改变InGaAs/GaAsP多量子阱结构的应力情况。研究结果表明，在GaAsP材料中P含量分别为0,0.128,0.184,0.257时，样品的室温PL发光峰强度随着P组分的增加而明显增强，PL发光峰的峰位略微蓝移，半峰宽整体有减小趋势。样品的XRD测试结果显示，随P组分增加，可以清晰地发现高阶卫星峰。样品的AFM测试结果显示，超出临界厚度会出现层-岛生长模式，而合适的应变补偿有助于缓解应力积累，可以获得较好的表面形貌。当GaAsP材料中P组分为0.184时，PL半峰宽为29.9 nm，其XRD有多级卫星峰且半峰宽较小，AFM粗糙度0.130 nm，表面形貌显示为台阶流生长模式，生长质量最好。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "王立军" }, { "name": "text", "data": "，" }, { "name": "text", "data": "宁永强" }, { "name": "text", "data": "，" }, { "name": "text", "data": "秦莉" }, { "name": "text", "data": "，" }, { "name": "text", "data": "等" }, { "name": "text", "data": ". 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" }, { "name": "text", "data": "Tailoring strain and lattice relaxation characteristics in InGaAs/GaAsP multiple quantum wells structure with phosphorus doping engineering" }, { "name": "text", "data": " [J]." }, { "name": "text", "data": "J. Alloys Compd." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "770" }, { "name": "text", "data": ":" }, { "name": "text", "data": "517" }, { "name": "text", "data": "-" }, { "name": "text", "data": "522" }, { "name": "text", "data": "." } ], "title": "Tailoring strain and lattice relaxation characteristics in InGaAs/GaAsP multiple quantum wells structure with phosphorus doping engineering" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20200379", "clc": [ [ { "name": "text", "data": "TN304.2" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032(2021)04-0448-07", "citeme": [], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "吉林省科技发展计划（20190302052GX）资助项目" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by Jilin Science and Technology Development Plan (20190302052GX)" } ] } ], "history": { "received": "2020-12-12", "revised": "2021-01-04", "ppub": "2021-04-01", "opub": "2021-10-22" }, "copyright": { "data": [], "year": "2021" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "04", "volume": "42", "originalSource": [] }

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