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Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology
Synthesis and Properties of Materials | 更新时间:2021-04-23
    • Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology

    • Chinese Journal of Luminescence   Vol. 42, Issue 4, Pages: 448-454(2021)
    • DOI:10.37188/CJL.20200379    

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  • Xu WANG, Hai-zhu WANG, Bin ZHANG, et al. Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology. [J]. Chinese Journal of Luminescence 42(4):448-454(2021) DOI: 10.37188/CJL.20200379.

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