Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells <italic style="font-style: italic">via</italic> MOCVD Technology

Xu WANG; Hai-zhu WANG; Bin ZHANG; Qu-hui WANG; Jie FAN; Yong-gang ZOU; Xiao-hui MA

doi:10.37188/CJL.20200379

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Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology

Synthesis and Properties of Materials | 更新时间：2021-04-23

- Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology
- Chinese Journal of Luminescence Vol. 42, Issue 4, Pages: 448-454(2021)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室，吉林　长春　 130022
- 作者简介：
- 基金信息：
  
  Jilin Science and Technology Development Plan(20190302052GX)
- DOI：10.37188/CJL.20200379
  CLC： TN304.2
- Published：01 April 2021，
  
  Received：12 December 2020，
  
  Revised：04 January 2021，
扫描看全文
Xu WANG, Hai-zhu WANG, Bin ZHANG, et al. Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology. [J]. Chinese Journal of Luminescence 42(4):448-454(2021)
DOI：

Xu WANG, Hai-zhu WANG, Bin ZHANG, et al. Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology. [J]. Chinese Journal of Luminescence 42(4):448-454(2021) DOI： 10.37188/CJL.20200379.

摘要

利用金属有机化学气相沉积技术在GaAs衬底上开展了大失配InGaAs多量子阱的外延生长研究。针对InGaAs与GaAs之间较大晶格失配的问题，设计了GaAsP应变补偿层结构;通过理论模拟与实验相结合的方式，调控了GaAsP材料体系中的P组分，设计了P组分分别为0

0.128

0.184

0.257的三周期In

As/GaAs

多量子阱结构;通过PL、XRD、AFM测试对比发现，高势垒GaAsP材料的张应变补偿可以改善晶体质量。综合比较，在P组分为0.184时，PL波长1 043.6 nm，半峰宽29.9 nm

XRD有多级卫星峰且半峰宽较小，AFM粗糙度为0.130 nm，表面形貌显示为台阶流生长模式。

Abstract

The large mismatched InGaAs multiple quantum wells on GaAs substrates were prepared by metal-organic chemical vapor deposition(MOCVD) technology. In order to solve the large lattice mismatch between InGaAs and GaAs

the GaAsP strain compensation layer structure was designed. And our systematically theoretical and experimental studies were performed upon the composition adjustment of P in the GaAsP materials. The three-periods In

As/GaAs

multi-quantum wells structures with the P component of 0

0.128

0.184

and 0.257 were prepared. Compared with PL

XRD

AFM testing results of the samples with and without GaAsP layer

it is found that tensile strain compensation of higher barrier GaAsP material could improve the crystal quality. When the content of P was 0.184

the PL wavelength of InGaAs/GaAsP MWQs was 1 043.6 nm

the FWHM was 29.9 nm. The XRD peaks had multi-level satellite peaks

and the FWHM of the satellite peaks was small. The AFM roughness was 0.130 nm

and the surface morphology showed a step flow growth mode.

关键词

金属有机化学气相沉积InGaAs/GaAsP应变补偿多量子阱晶格失配

Keywords

metal-organic chemical vapour deposition(MOCVD)InGaAs/GaAsPstrain compensationmultiple quantum wellslattice mismatch

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Related Author

Xu WANG

Hai-zhu WANG

Bin ZHANG

Qu-hui WANG

Jie FAN

Yong-gang ZOU

Xiao-hui MA

HUANG Jia-lin

Related Institution

National Key Laboratory on High Power Semiconductor Lasers， Changchun University of Science and Technology

Department of Applied Physics, China Agriculture University

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Changchun Institute of Physics, Chinese Academy of Sciences

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Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology

DOI：10.37188/CJL.20200379

摘要

Abstract

关键词

Keywords

references