Effect of SiO<sub>2</sub> Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance

Si-hong LI; Xiang HOU; Rong-huang LUO; Yang LIU; Meng-jie ZHONG; Xue-tao LUO

doi:10.37188/CJL.20200327

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Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance

Device Fabrication and Physics | Updated：2021-04-23

- Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance
- Chinese Journal of Luminescence Vol.42, Issue 4, (2021)
- Affiliations：
  
  School of Materials, Xiamen University,Xiamen,China,361000;Fujian Zoomking Technology Co., Ltd.,Longyan,China,364000
- Author bio：
- Funds：
  
  Cooperation Project Between Xiamen University and Fujian Zoomking Technology Co., Ltd.(XDHT2018582A)
- DOI：10.37188/CJL.20200327 CLC： TN312.8
- Published：01 April 2021，
  
  Received：29 October 2020，
  
  Revised：19 December 2020，
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Cite this article
Si-hong LI, Xiang HOU, Rong-huang LUO, et al. Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance. [J]. Chinese Journal of Luminescence 42(4):526-533(2021)
DOI：

Si-hong LI, Xiang HOU, Rong-huang LUO, et al. Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance. [J]. Chinese Journal of Luminescence 42(4):526-533(2021) DOI： 10.37188/CJL.20200327.

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"data": "图形化蓝宝石衬底(SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " patterned sapphire substrate,SPSS)，利用LED器件的外延生长和微纳加工技术获得了基于SPSS的GaN基LED器件。通过分析GaN外延层晶体质量、光提取效率和LED器件性能，重点研究了SPSS对GaN生长及LED发光性能的影响。实验及模拟仿真结果表明，与常规图形化蓝宝石衬底(Conventional patterned sapphire substrate,CPSS)相比，SPSS上生长的GaN外延层位错密度较低，晶体质量较高，SPSS-LED的光提取效率提高26%、光输出功率和亮度均提高约5%。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "To improve the luminescence performance of gallium nitride(GaN)-based light-emitting diodes(LEDs), a SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " film was deposited on sapphire substrates by the plasma-enhanced chemical vapor deposition(PECVD) in this study. After depositing the SiO " }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " film, a SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " patterned sapphire substrate(SPSS) was prepared through photolithography and dry etching, and a GaN-based LED device with SPSS was obtained by using epitaxial growth and micro-nano processing technology of the LED device. The effect of SPSS on the crystal quality of the GaN epitaxial layer, the light extraction efficiency, and the performance of the LED device were investigated. The experimental and simulation results show that, compared to the conventional patterned sapphire substrates(CPSS), the GaN epitaxial layer grown on SPSS had lower dislocation density and higher crystal quality, and the light extraction efficiency of SPSS-LED was increased by 26%, as well as that the light output power and brightness of SPSS-LED were both increased by about 5%." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "蓝宝石复合衬底" } ], [ { "name": "text", "data": "LED芯片" } ], [ { "name": "text", "data": "位错密度" } ], [ { "name": "text", "data": "GaN" } ], [ { "name": "text", "data": "光提取效率" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " sapphire composite substrate" } ], [ { "name": "text", "data": "LED chip" } ], [ { "name": "text", "data": "dislocation density" } ], [ { "name": "text", "data": "GaN" } ], [ { "name": "text", "data": "light extraction efficiency" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "近年来，氮化镓(GaN)半导体材料因其在发光器件、大功率和高频器件上的应用而引起了广泛的研究兴趣" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R1", "R2", "R3" ], "text": "1-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前能够用于GaN生长的异质衬底主要有硅衬底、碳化硅和蓝宝石。由于异质衬底与GaN外延层之间较大的晶格失配和热失配，导致GaN外延层存在较高的位错密度" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R4", "R5" ], "text": "4-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这些位错充当非辐射复合中心" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和电子散射中心" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，使GaN基发光二极管(LED)器件的内量子效率下降;另外，GaN与空气的全反射也会降低LED的光提取效率，从而降低了LED器件的光学和电性能。为了解决这些问题，已经提出许多方法，例如采用侧向外延生长(ELOG)技术" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "来改善GaN外延薄膜的晶体质量，或者采用光子晶体技术 " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、表面粗化技术" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "以及图形化蓝宝石衬底(Patterned sapphire substrate,PSS)技术" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等均可以有效提高LED器件的光提取效率。其中，特别是PSS的使用引起了广泛的关注。据报道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ",PSS能够使GaN外延生长由纵向变成横向，降低了GaN外延材料的位错密度，从而提高内量子效率;此外，非平整的GaN/蓝宝石表面可以改变有源层发出光的传播方向，避免GaN与空气间因折射率差太大而造成的内部全反射，增加了光子的散射，提高了光的出射概率，使光提取效率增加。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "然而，对于常规PSS，工业化路线已经相对成熟，亮度提高已经达到了理论极限，如何在蓝宝石衬底材料体系的大前提下，进一步提升 LED 的发光性能，是我们所关注的焦点。据Lin" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "报道，采用折射率低于蓝宝石衬底(1.78)的纳米粒子衬底，可以提高LED的外量子效率;Ueda" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过旋涂法在蓝宝石衬底上制备了直径为300550 nm的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "亚微米球;Li" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用自组装的方法在蓝宝石衬底上制备了直径为3 μm的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "微米球，通过生长GaN外延层并制成LED器件，结果显示采用SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "球可以降低GaN外延层的位错密度，提高其晶体质量，从而使LED的光输出功率提高。尽管选择SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "材料作为衬底是可行的，但由于SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "球的排列是随机分布的并且容易紧密地排列在一起，从而导致LED的光学和电性能的均匀性和稳定性较差，不适合应用于工业化生产。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了解决上述问题，本文设计了一种具有优异性能的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "图形化蓝宝石衬底(SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " patterned sapphire substrate,SPSS)及基于SPSS的GaN基LED器件。对比常规图形化蓝宝石衬底(Conventional patterned sapphire substrate,CPSS)的LED,SPSS-LED的光提取效率提高26%，光输出功率和亮度均提高约5%。该方法涉及的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "材料刻蚀工艺简单成熟、刻蚀速率高且对掩膜材料的胶型无依赖性，可以大幅度提升ICP刻蚀机台的产能，降低生产成本。本文所提出的SPSS对于实现高效低成本LED的产业化生产具有广阔的应用前景。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "本文实验中SPSS的制备主要由薄膜沉积、光刻(涂胶、曝光、显影)、刻蚀等步骤组成。具体的制备过程如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "SPSS的制备流程" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Preparation process of SPSS" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349575&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349582&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349578&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "第一步，将10.16 cm(4 in)蓝宝石衬底放入等离子体增强化学气相沉积(PECVD)设备(SENTECH SI 500D)中，设备在SiH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "和O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "气体中起辉放电形成等离子体，沉积一层2.1 μm左右的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "第二步，采用匀胶机(CND E1512-DV3-246)旋涂光刻胶(AZ601)，匀胶转速为3 500 r/min，控制光刻胶厚度在2.1 μm，利用光刻机(Nikon NSR I9)对带有光刻胶的衬底进行曝光。曝光完成后，用显影液(瑞红238)对曝光后的带胶蓝宝石衬底显影60 s，清洗甩干后将其在110 ℃的热板上烘烤120 s。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "第三步，将光刻完成的衬底在刻蚀机(maxis ICP 300L)中刻蚀，刻蚀气体为BCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "。首先在上下电极功率1 750 W/450 W的条件下刻蚀1 800 s，待刻出二氧化硅的图形后，改变功率至1 750 W/800 W继续刻蚀300 s，使SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "下面蓝宝石基座的高度约为0.25 μm，最后得到了SPSS。值得一提的是，SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "材料下部分的蓝宝石更有利于GaN外延层成功生长在衬底上，解决了由于衬底的尺寸过大引起外延生长过程中“雾化”的问题，缩短了外延生长时间，有效提高了生产效率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "用传统的方法制备图形形貌跟SPSS一致的CPSS，与SPSS的制备流程相比，CPSS的制备流程没有PECVD沉积SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜这一步，即通过在蓝宝石平片上涂胶、曝光、显影、干法刻蚀等步骤制备得到CPSS。两种结构的微观形貌如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示，制备得到的CPSS和SPSS具有良好的周期性和均匀性的图形形貌，最后形成锥形的周期为3 μm，占空比85%90%，高度1.9 μm。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "(a)CPSS平视图;(b)SPSS平视图;(c)CPSS截面图;(d)SPSS截面图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "(a)CPSS plan view. (b)SPSS plan view. (c)CPSS cross-section view. (d)SPSS cross-section view." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349587&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349597&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349592&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "本实验采用金属有机气相沉积(MOCVD)设备(Vecco K465I)生长GaN基LED外延片。两种衬底采用同炉生长，生长过程采用H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为载气，三甲基镓(TMGa)、三甲基铟(TMIn)和氨气(NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")分别是Ga源、In源和N源，二茂镁(CP2Mg)和硅烷(SiH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": ")分别是p型氮化镓(p-GaN)和n型氮化镓(n-GaN)的掺杂材料。首先，衬底在反应室内1 100 ℃高温氢化处理去除表面杂质;接着，采用两步法生长，先生长30 nm的低温GaN缓冲层，再高温生长2 μm非掺杂GaN和2 μm的n型GaN;然后，在此基础上继续生长由10个周期In" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "N/GaN量子阱构成的有源区，30 nm的AlGaN电子阻挡层，150 nm的p型GaN接触层;最后，将两个样品进行外延退火后用相同的芯片工艺流程制作成LED芯片，芯片尺寸为250 μm×575 μm(10 mil×23 mil)。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "实验过程中所用的扫描电子显微镜(SEM)为SU-70，高分辨率X射线衍射仪(HRXRD)为PANalytical 的X Pert PRO，原子力显微镜(AFM)为Asylum Research的Cypher S，透射电子显微镜(TEM)为FEI的Talos F200X，拉曼测试设备为WITec alpha 300RA。采用有限元差分(FDTD)软件模拟光提取效率，维明LED627芯片测试仪测量芯片数据，封装完成后用YF-1000积分球测试光电参数，维明CX-800 LED光强分布测试仪测量配光曲线。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　GaN外延层晶体质量分析" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "为了表征CPSS和SPSS的GaN外延层晶体质量，使用HRXRD沿两个样品的对称(002)面和非对称(102)面进行" }, { "name": "italic", "data": [ { "name": "text", "data": "ω" } ] }, { "name": "text", "data": "扫描摇摆曲线测量。" }, { "name": "xref", "data": { "text": "图3(a)、(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)、(b)" } ] } }, { "name": "text", "data": "分别为(002)对称面和(102)非对称面的摇摆曲线扫描结果。由图可知，与直接生长在CPSS上的GaN外延层相比，生长在SPSS上的GaN外延层的摇摆曲线峰值宽度明显减少。定量分析结果表明，对于(002)对称面，SPSS的GaN外延层和CPSS的GaN外延层的半高宽(FWHM)值从198 arcsec减小到128 arcsec;对于(102)非对称面，半高宽(FWHM)值从210 arcsec减小到140 arcsec。据报道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ",(002)对称面的半高宽值反映了螺型位错和混合型位错的位错密度，(102)非对称面的半高宽值反映了刃型位错和混合型位错的位错密度。根据位错密度公式" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "CPSS-GaN和SPSS-GaN的XRD摇摆曲线。(a)对称(002)面;(b)非对称(102)面。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "XRD rocking curves of CPSS-GaN and SPSS-GaN. (a)Symmetric (002) plane. (b)Asymmetric (102) plane." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349602&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349611&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349607&type=" } ] } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349615&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349618&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349622&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF1" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349626&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349631&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349636&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": " 和" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "分别是刃型位错和螺型位错的位错密度，" }, { "name": "italic", "data": [ { "name": "text", "data": "β" } ] }, { "name": "text", "data": "为XRD摇摆曲线半高宽，" }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": "为伯格斯矢量长度，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349637&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349646&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349642&type=" } } } ] }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349651&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349658&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349653&type=" } } } ] }, { "name": "text", "data": "=0.518 5 nm," }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349664&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349671&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349667&type=" } } } ] }, { "name": "italic", "data": [ { "name": "text", "data": "b" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "e" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349675&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349683&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349679&type=" } } } ] }, { "name": "text", "data": "=0.318 9 nm;" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "text", "data": " 是倒格子矢量(" }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "khl" } ] }, { "name": "text", "data": ")和(001)面法线之间的夹角。通过计算得出，生长在CPSS上GaN外延层的刃型位错和螺型位错的位错密度分别为3.7×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和0.78×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "，而生长在SPSS上的GaN外延层的刃型位错和螺型位错的位错密度分别为2.4×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和0.33×10" }, { "name": "sup", "data": [ { "name": "text", "data": "8" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "。因此，采用SPSS可降低GaN外延层的位错密度，进而提高GaN外延层的晶体质量。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "通过透射电子显微镜(TEM)图像研究了CPSS和SPSS上GaN外延层的位错分布情况。" }, { "name": "xref", "data": { "text": "图4(a)、(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)、(b)" } ] } }, { "name": "text", "data": "分别为CPSS-GaN和SPSS-GaN沿[10" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349688&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349696&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349692&type=" } } } ] }, { "name": "text", "data": "0]晶带轴拍摄的双束暗场像，" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[0002]。" }, { "name": "xref", "data": { "text": "图4(c)、(d)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(c)、(d)" } ] } }, { "name": "text", "data": "分别为CPSS-GaN和SPSS-GaN沿[10" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349697&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349708&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349703&type=" } } } ] }, { "name": "text", "data": "0]晶带轴拍摄的双束暗场像，" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[11" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349713&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349721&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349718&type=" } } } ] }, { "name": "text", "data": "0]。从" }, { "name": "xref", "data": { "text": "图4(a)、(c)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)、(c)" } ] } }, { "name": "text", "data": "可以看出，在" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[0002]和" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[11" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349724&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349731&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349727&type=" } } } ] }, { "name": "text", "data": "0]时，都可以观察到CPSS-GaN沿生长方向传播的高位错密度，这些位错大多数是具有刃型位错和螺型位错的混合位错，主要存在圆锥的锥顶和侧壁之上。从" }, { "name": "xref", "data": { "text": "图4(b)、(d)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)、(d)" } ] } }, { "name": "text", "data": "可以观察到，SPSS-GaN的位错主要存在于圆锥的锥顶之上，并且其位错数量明显低于CPSS-GaN的位错数量。此外，从" }, { "name": "xref", "data": { "text": "图4(d)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(d)" } ] } }, { "name": "text", "data": "可以看到，SPSS-GaN的下部分蓝宝石区域产生了一些位错，这是由于GaN外延层与蓝宝石衬底之间的晶格失配引起的。但是，这些位错无法渗透到圆锥的锥顶之外，原因是SPSS的底部蓝宝石区域的GaN横向生长和蓝宝石衬底" }, { "name": "italic", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "面区域的GaN生长相结合，产生堆垛层错，堆垛层错的形成几乎不产生晶格畸变，并且其存在能有效抑制穿透位错的攀爬，有效地抑制和阻挡位错向上传播" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R19", "R20" ], "text": "19-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，使位错数量急剧减少。同样，在CPSS-GaN中也观察到了该现象，这也解释了在SPSS制备过程中底部继续刻蚀出蓝宝石区域的原因。然而，在SPSS上的GaN外延层横向合并时，在圆锥的锥顶之上形成了一些位错，如" }, { "name": "xref", "data": { "text": "图4(d)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(d)" } ] } }, { "name": "text", "data": "所示，该区域不存在堆垛层错，所以这些位错无法被抑制。尽管如此，相比于CPSS-GaN,SPSS-GaN仍然显示出了更少的位错数量以及更好的结晶质量，与XRD测试结果吻合。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "CPSS-GaN沿[10" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349734&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349740&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349737&type=" } } } ] }, { "name": "text", "data": "0]晶带轴的暗场TEM横截面图像，其中反射" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[0002](a)和" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[11" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349743&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349747&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349745&type=" } } } ] }, { "name": "text", "data": "0](c);对于SPSS-GaN沿[10" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349750&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349759&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349754&type=" } } } ] }, { "name": "text", "data": "0]晶带轴的暗场TEM横截面图像，其中反射" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[0002](b)和" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[11" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349762&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349770&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349767&type=" } } } ] }, { "name": "text", "data": "0](d)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Dark-field cross-sectional TEM images of CPSS-GaN viewed along the [10" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349773&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349783&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349777&type=" } } } ] }, { "name": "text", "data": "0] zone axis with reflections" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[0002](a) and" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[11" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349788&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349796&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349792&type=" } } } ] }, { "name": "text", "data": "0](c), and for SPSS-GaN viewed along the [10" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349798&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349806&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349802&type=" } } } ] }, { "name": "text", "data": "0] zone axis with reflections" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[0002](b) and" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "=[11" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349810&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349818&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349814&type=" } } } ] }, { "name": "text", "data": "0](d)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349822&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349826&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349823&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步探究SPSS对GaN外延层晶体质量的优化作用，本文通过AFM对上述两种样品的表面进行了3 μm×3 μm和1 μm×1 μm范围扫描，扫描模式为轻敲模式。如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，两种扫描范围内，两种样品均显示原子层台阶状的表面形貌。在3 μm×3 μm范围内，CPSS和SPSS上GaN外延层的均方根粗糙度(RMS)分别为0.155 nm和0.122 nm;在1 μm×1 μm 范围内，CPSS和SPSS上GaN外延层的RMS分别为0.154 nm和0.127 nm，且RMS并没有随着扫描范围的增加而增大，说明采用SPSS的GaN外延层更有利于获得原子平面。从" }, { "name": "xref", "data": { "text": "图5(a)、(c)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(a)、(c)" } ] } }, { "name": "text", "data": "中可以看到，CPSS的GaN外延层表面存在着大小不一的缺陷坑和较小的黑点，其中较小的黑点是位错露头" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通过对比可知，SPSS上的GaN外延层具有较少的台阶终端和位错露头。上述结果表明，SPSS上的GaN外延层的结晶质量优于CPSS上的GaN外延层，与XRD及TEM测试结果吻合。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "CPSS-GaN和SPSS-GaN的AFM图像:3 μm×3 μm CPSS-GaN(a),SPSS-GaN(b);1 μm×1 μm CPSS-GaN(c),SPSS-GaN(d)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "AFM images of CPSS-GaN and SPSS-GaN: 3 μm×3 μm CPSS-GaN(a), SPSS-GaN(b); 1 μm×1 μm CPSS-GaN(c), SPSS-GaN(d)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349829&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349835&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349832&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "为CPSS和SPSS上的GaN外延层高能E" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(high)模式周围的拉曼光谱，E" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(high)对应变敏感，已广泛用于测量GaN外延层的应力。与无应力状态的GaN(567.6 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "相比，CPSS和SPSS上生长的GaN样品，E" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(high)分别为570.8 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和569.8 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，两种样品均往高能方向移动，说明CPSS和SPSS的GaN外延层均处于压应力状态。通过对比可知，SPSS上生长的GaN外延层所受到的压应力较小。拉曼测试结果与XRD、TEM、AFM的结果相符。由此可知，SPSS的存在有助于减少GaN层的位错，提高了载流子迁移率和少数载流子寿命，从而获得了晶体质量较高的GaN外延层。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "CPSS-GaN和SPSS-GaN的拉曼光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Raman spectra of CPSS-GaN and SPSS-GaN" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349838&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349844&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349841&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　LED光提取效率分析" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "由于光提取效率较难从表征手段上进行验证，故本文采用了FDTD方法模拟CPSS和SPSS结构对LED光提取效率的影响。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文采用结构尺寸为20 μm×5.75 μm的二维LED计算模型。如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示，从上而下结构依次为p-GaN(折射率为2.45)、有源层MQWs(折射率为2.49)、n-GaN(折射率为2.45)、CPSS(折射率为1.78)或SPSS(折射率为1.47)、蓝宝石(折射率为1.78)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } } ], "rid": [ "R23", "R24" ], "text": "23-24", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。设置图形周期为3 μm，高度为1.9 μm，占空比85%90%，模型四周采用完美匹配层(PML)包围。Benisty" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "的研究结果表明，LED中有源层的载流子复合发光过程可以用点光源模拟，同时由于多个偶极子源相互之间会产生非物理特性的干涉，导致计算结果不准确。因此，本文选择单个偶极子源模拟有源层，其中心波长为450 nm。在模型顶部设置监视器monitor1，用来测试光从LED辐射出来的光功率" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "out" } ] }, { "name": "text", "data": ";在偶极子源处用监视器monitor2包围计算发出的光在各个方向的总功率" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "total" } ] }, { "name": "text", "data": "。定义光提取效率为:" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "CPSS-LED和SPSS-LED的光提取效率" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Light extraction efficiency of CPSS-LED and SPSS-LED" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349847&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349853&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349850&type=" } ] } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349856&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349860&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349862&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF3" } }, { "name": "p", "data": [ { "name": "text", "data": "模拟结果如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示，可见CPSS-LED和SPSS-LED的光提取效率随着波长呈现规律性的变化。在450 nm处，CPSS-LED的" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "LEE" } ] }, { "name": "text", "data": "为12.30%,SPSS-LED的" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "LEE" } ] }, { "name": "text", "data": "为15.49%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "我们采用光提取效率的增强因子来反映LED光提取效率的增强作用，并且定义光提取效率的增强因子" }, { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "为:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349866&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349868&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349871&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF4" } }, { "name": "p", "data": [ { "name": "text", "data": "通过计算可知，在波长450 nm处，相较于CPSS-LED,SPSS-LED的光提取效率增强了26%，说明GaN/SPSS界面可以比GaN/CPSS界面反射出更多的光至空气中。这是由于当量子阱的光到达底部GaN/衬底界面时，折射率小的材料对应的全反射角度更小，更有利于光反射回到顶部界面射出，从而提高LED器件的出光效率。因此，SPSS-LED具有更高的光提取效率。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　LED器件性能分析" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "将CPSS-GaN和SPSS-GaN进行外延退火后制作成尺寸为250 μm×575 μm(10 mil×23 mil)的LED芯片并封装，测试两者的LED芯片参数，结果如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。从" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "中可以看出，两种结构的LED正向电压(" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349874&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349880&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349877&type=" } } } ] }, { "name": "text", "data": ")基本一致，两者都在正常工作范围内。在波长450 nm处，对封装前LED芯片的光输出功率(LOP)取平均值，CPSS-LED和SPSS-LED的光输出功率分别为211.85 mW和223.05 mW，可知SPSS-LED的光输出功率比CPSS-LED提高约5%。同样地，芯片封装后的CPSS-LED和SPSS-LED的亮度平均值分别为63.05 lm和65.9 lm。由此可知，相比于CPSS-LED,SPSS-LED的亮度提高约5%，与光输出功率的结果一致。为了获取高的LED发光性能，通常需要高的外量子效率(EQE),EQE与内量子效率(IQE)、光提取效率(LEE)和载流子注入效率(CIE)有关。由于两种样品的器件制备过程是相同的，因此我们认为两者的CIE 相同，在这不给予讨论，仅着重研究IQE和LEE对LED的影响。IQE一般与LED外延层的晶体质量、衬底与外延层的匹配度等因素相关，LEE一般与LED的微结构、封装等因素相关。FDTD模拟表明，相较于CPSS-LED,SPSS-LED的光提取效率增强了26%，需要说明的是，理论计算采用的是理想的结构，与实际的结构稍有差异，比如缺陷位错引起的光的损耗等，造成实际情况与理论计算稍有不同。LED器件在实际制备过程中受到多种因素的影响，导致SPSS-LED的光输出功率和亮度仅仅提高约5%。在半导体器件中，反向击穿电压是衡量器件稳定性的重要参数，并且反向击穿电压可以反映器件的穿透位错数量，反向击穿电压越高，穿透位错越少。从芯片数据可知，在5 μA漏电电流下，SPSS-LED反向击穿电压" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "z" } ] }, { "name": "text", "data": "较CPSS-LED电压提高约10 V。因此，SPSS-LED反向击穿电压的大幅提升可以充分说明SPSS对外延GaN层晶体质量的提升。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "CPSS-LED和SPSS-LED的芯片参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Chip parameters of CPSS-LED and SPSS-LED" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "2", "align": 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"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349903&type=" } } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步论证LED芯片的内部和外部表现，本文测试了CPSS-LED和SPSS-LED两种芯片的配光曲线，即出光角和相对光强的关系，测试结果如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图8(a)、(b)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(a)、(b)" } ] } }, { "name": "text", "data": "为两种样品的配光曲线图，为极坐标表示法，从中可知SPSS-LED在更大的角度范围内具有光强分布，并且发光强度大于CPSS-LED。" }, { "name": "xref", "data": { "text": "图8(c)、(d)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(c)、(d)" } ] } }, { "name": "text", "data": "为直角坐标表示法，可以直观地看出LED在不同角度的光强值。从" }, { "name": "xref", "data": { "text": "图8(c)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(c)" } ] } }, { "name": "text", "data": "可以看出，CPSS-LED的配光曲线在左右两侧约30°的方向有最大的发光强度，在中心0°方向，曲线存在中央凹陷，成类似于马鞍形状分布，由此可知CPSS-LED的发光强度分布比较分散。从" }, { "name": "xref", "data": { "text": "图8(d)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(d)" } ] } }, { "name": "text", "data": "可以明显看到SPSS-LED的光更加集中，轴向光更好。SPSS-LED在配光角度方面的集中性表明其未来在背光显示等领域具有较好的应用潜力。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "(a)、(c)CPSS-LED的配光曲线图;(b)、(d)SPSS-LED的配光曲线图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "(a),(c)Light distribution curve of CPSS-LED. (b),(d)Light distribution curve of SPSS-LED." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349911&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349917&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21349914&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文研究了SPSS对GaN生长及LED发光性能的影响。为了提高GaN基LED的发光性能，我们采用等离子体增强化学气相沉积(PECVD)方法在蓝宝石衬底上沉积SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜，再经过光刻和干法刻蚀技术制备了SPSS，结合LED器件的外延生长和微纳加工技术获得了CPSS和SPSS的GaN基LED器件并对其进行了表征分析。实验结果表明，与CPSS-LED相比，所制备的SPSS-LED光输出功率和亮度提高约5%。机理研究表明，SPSS上生长的GaN外延层位错密度较低，晶体质量较高。结合有限元差分模拟(FDTD)仿真，可知SPSS-LED的光提取效率提高了26%。通过对相关实验数据分析和讨论，结果表明SPSS有望取代CPSS进行工业化生产，并且其在背光显示等领域将展现良好的应用潜力。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHAO Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XU S R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG J C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". 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