Effect of SiO<sub>2</sub> Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance

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Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance

Device Fabrication and Physics | 更新时间：2021-04-23

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- Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance
- Chinese Journal of Luminescence Vol. 42, Issue 4, Pages: 526-533(2021)
- 作者机构：
  
  1.厦门大学材料学院，福建　厦门　 361000
  2.福建中晶科技有限公司，福建　龙岩　 364000
- 作者简介：
- 基金信息：
  
  Cooperation Project Between Xiamen University and Fujian Zoomking Technology Co., Ltd.(XDHT2018582A)
- DOI：10.37188/CJL.20200327
  CLC： TN312.8
- Published：01 April 2021，
  
  Received：29 October 2020，
  
  Revised：19 December 2020，
扫描看全文
Si-hong LI, Xiang HOU, Rong-huang LUO, et al. Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance. [J]. Chinese Journal of Luminescence 42(4):526-533(2021)
DOI：

Si-hong LI, Xiang HOU, Rong-huang LUO, et al. Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance. [J]. Chinese Journal of Luminescence 42(4):526-533(2021) DOI： 10.37188/CJL.20200327.

摘要

为了提高氮化镓(GaN)基发光二极管(LEDs)的发光性能，采用等离子体增强化学气相沉积(PECVD)在蓝宝石衬底上沉积SiO

2

薄膜，经过光刻和干法刻蚀技术制备了SiO

2

图形化蓝宝石衬底(SiO

2

patterned sapphire substrate

SPSS)，利用LED器件的外延生长和微纳加工技术获得了基于SPSS的GaN基LED器件。通过分析GaN外延层晶体质量、光提取效率和LED器件性能，重点研究了SPSS对GaN生长及LED发光性能的影响。实验及模拟仿真结果表明，与常规图形化蓝宝石衬底(Conventional patterned sapphire substrate

CPSS)相比，SPSS上生长的GaN外延层位错密度较低，晶体质量较高，SPSS-LED的光提取效率提高26%、光输出功率和亮度均提高约5%。

Abstract

To improve the luminescence performance of gallium nitride(GaN)-based light-emitting diodes(LEDs)

a SiO

2

film was deposited on sapphire substrates by the plasma-enhanced chemical vapor deposition(PECVD) in this study. After depositing the SiO

2

film

a SiO

2

patterned sapphire substrate(SPSS) was prepared through photolithography and dry etching

and a GaN-based LED device with SPSS was obtained by using epitaxial growth and micro-nano processing technology of the LED device. The effect of SPSS on the crystal quality of the GaN epitaxial layer

the light extraction efficiency

and the performance of the LED device were investigated. The experimental and simulation results show that

compared to the conventional patterned sapphire substrates(CPSS)

the GaN epitaxial layer grown on SPSS had lower dislocation density and higher crystal quality

and the light extraction efficiency of SPSS-LED was increased by 26%

as well as that the light output power and brightness of SPSS-LED were both increased by about 5%.

关键词

SiO2蓝宝石复合衬底LED芯片位错密度GaN光提取效率

Keywords

SiO2 sapphire composite substrateLED chipdislocation densityGaNlight extraction efficiency

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Related Author

Si-hong LI

Xiang HOU

Rong-huang LUO

Yang LIU

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SUN Xuejiao

Related Institution

Fujian Zoomking Technology Co. ， Ltd.

School of Materials， Xia Men University

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Research and Development Center for Semiconductor Lighting Technology， Institute of Semiconductors， Chinese Academy of Sciences

College of Physics And Electronic Engineering， Shanxi Unversity

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