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Effect of SiO2 Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance
Device Fabrication and Physics | 更新时间:2021-04-23
    • Effect of SiO2 Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance

    • Chinese Journal of Luminescence   Vol. 42, Issue 4, Pages: 526-533(2021)
    • DOI:10.37188/CJL.20200327    

      CLC: TN312.8
    • Published:01 April 2021

      Received:29 October 2020

      Revised:19 December 2020

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  • Si-hong LI, Xiang HOU, Rong-huang LUO, et al. Effect of SiO2 Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance. [J]. Chinese Journal of Luminescence 42(4):526-533(2021) DOI: 10.37188/CJL.20200327.

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Related Author

Si-hong LI
Xiang HOU
Rong-huang LUO
Yang LIU
Meng-jie ZHONG
Xue-tao LUO
GUO Chunhui
SUN Xuejiao

Related Institution

Fujian Zoomking Technology Co. , Ltd.
School of Materials, Xia Men University
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Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences
College of Physics And Electronic Engineering, Shanxi Unversity
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