倒置结构白光有机电致发光器件

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "倒置结构白光有机电致发光器件" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Inverted White Light Organic-emitting Diodes" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "张", "givenname": "小亮", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Xiao-liang", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "张小亮(1995-), 男, 宁夏中卫人, 硕士研究生, 2018年于天津工业大学获得学士学位, 主要从事高效稳定的有机电致发光器件的研究。E-mail:2504326602@qq.com" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "张小亮" } ] }, { "name": "text", "data": "(1995-), 男, 宁夏中卫人, 硕士研究生, 2018年于天津工业大学获得学士学位, 主要从事高效稳定的有机电致发光器件的研究。E-mail:" }, { "name": "text", "data": "2504326602@qq.com" } ] ] } ], "email": "2504326602@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "徐", "givenname": "亚楠", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XU", "givenname": "Ya-nan", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "陈", "givenname": "月花", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHEN", "givenname": "Yue-hua", "namestyle": "western", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "CHEN Yue-hua, E-mail:iamyhchen@njupt.edu.cn", "data": [ { "name": "text", "data": "CHEN Yue-hua, E-mail:iamyhchen@njupt.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "陈月花(1980-), 女, 河南驻马店人, 博士, 助理研究员, 2014年于西安交通大学获得博士学位, 主要从事有机半导体光电子器件方面的研究。E-mail:iamyhchen@njupt.edu.cn" ], "graphic": [], "data": [ [ { "name": "bold", "data": [ { "name": "text", "data": "陈月花" } ] }, { "name": "text", "data": "(1980-), 女, 河南驻马店人, 博士, 助理研究员, 2014年于西安交通大学获得博士学位, 主要从事有机半导体光电子器件方面的研究。E-mail:" }, { "name": "text", "data": "iamyhchen@njupt.edu.cn" } ] ] } ], "email": "iamyhchen@njupt.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "", "text": "南京邮电大学 有机电子与信息显示国家重点实验室培育基地, 江苏 南京 210023", "data": [ { "name": "text", "data": "南京邮电大学 有机电子与信息显示国家重点实验室培育基地, 江苏 南京 210023" } ] }, { "lang": "en", "label": "", "text": "Key Laboratory for Organic Electronics and Information Displays, Nanjing University of Posts & Telecommunications, Nanjing 210023, China", "data": [ { "name": "text", "data": "Key Laboratory for Organic Electronics and Information Displays, Nanjing University of Posts & Telecommunications, Nanjing 210023, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "研究了在倒置白光有机电致发光器件（Organic light-emitting diodes，OLEDs）ITO/ZnO/PEI/EML/TAPC/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Al中引入Polyethylenimine（PEI）修饰层对器件性能的影响。研究发现，PEI修饰层的引入可以有效降低ZnO电子注入层的功函数，调控器件的电子注入，改善空穴和电子注入平衡，钝化ZnO表面缺陷态，减少激子猝灭。当PEI浓度为1.0 mg/mL时，倒置白光OLED器件性能达到最佳，其亮度和效率分别为11 720 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和16.0 cd·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。本研究为后期倒置结构高性能OLED器件的研发奠定了一定的基础。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "In this paper, polyethylenimine(PEI) was introduced into inverted white light-emitting diodes(IOLEDs) with the structure of ITO/ZnO/PEI/EML/TAPC/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Al. The effects of PEI as a surface modification layer on the performance of devices were investigated. It is found that the introduction of PEI can effectively reduce the work function of ZnO electron injection layer and control the electron injection of devices, improving the hole and electron injection balance. At the same time, it can passivate the surface defect states of ZnO and reduce exciton quenching. When the concentration of PEI is 1.0 mg/mL, white IOLEDs possess the optimal performance, with the largest brightness of 11 720 cd·m " }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " and efficiency of 16.0 cd·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " respectively. The introduction of PEI modified layer lays a foundation for the further research of inverted OLEDs with high performance." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "PEI" } ], [ { "name": "text", "data": "界面修饰" } ], [ { "name": "text", "data": "溶液法" } ], [ { "name": "text", "data": "倒置白光OLED" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "polyethylenimine(PEI)" } ], [ { "name": "text", "data": "interface modification" } ], [ { "name": "text", "data": "solution processing" } ], [ { "name": "text", "data": "inverted white OLED" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "白光有机电致发光器件(White organic light-emitting diodes，WOLEDs)因其在固体照明、背光板等方面的应用潜力，受到研究人员的广泛关注，已成为光电领域的研究热点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "b1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "b3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "b1", "b2", "b3" ], "text": "1-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在大尺寸显示领域中，OLED由于高对比度、超广视角和大面积柔性显示等优点表现出很大的应用潜力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "b4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "b6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "b4", "b5", "b6" ], "text": "4-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。有源矩阵OLED(AMOLED)技术在大面积、低功耗和高质量显示器中具有广阔的应用前景。由于倒置OLED(Inverted OLED, IOLED)相比传统OLED可以与目前技术成熟的n沟道非晶硅薄膜晶体管(a-Si TFTs)直接集成，因而获得了广泛关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "b7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "b8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "b7", "b8" ], "text": "7-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但对于倒置OLED器件而言，仍面临着一系列的问题，如传统的电子注入层与发光层间存在较大的注入势垒，导致电子注入效率低。人们通常引入具有优越光学及电学特性的金属氧化物(ZnO、TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "b9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "b14", "data": [ { "name": "text", "data": "14" } ] } } ], "rid": [ "b9", "b10", "b11", "b12", "b13", "b14" ], "text": "9-14", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "修饰ITO，可有效降低电子注入势垒，提高电子注入效率。但与此同时，金属氧化物薄膜的表面缺陷过多，会导致界面激子猝灭严重。为解决这一问题，本文尝试引入界面修饰层以钝化ZnO表面缺陷态，减少激子猝灭，提高电子注入效率，平衡电子和空穴的注入，进而提升IOLED器件的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "b15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "b17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "b15", "b16", "b17" ], "text": "15-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "金属氧化物ZnO是一种典型的n型半导体材料，由于其高的可见光透过率、电子迁移率和合适的导带能级(4.1~4.3 eV)，常用于有机半导体光电子器件的电子注入层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "b18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "b21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "b18", "b19", "b20", "b21" ], "text": "18-21", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，ZnO具有较深的价带能级，能有效阻挡空穴，抑制器件的漏电流，提升电子和空穴的复合效率。然而，溶胶-凝胶方法制备的ZnO薄膜，表面往往存在一定的陷阱，会引起激子猝灭，降低器件性能。由于polyethyleneimine(PEI)分子的主链和侧链上都含有胺基，因此在PEI/ZnO界面可以形成偶极子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "b22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这些偶极子可以改变ZnO的真空能级，降低ZnO功函数，从而有效降低电子注入势垒，增强电子从ZnO层注入到发光层。本文引入PEI修饰ZnO薄膜，钝化其表面缺陷，降低粗糙度，减少激子猝灭。同时，PEI修饰层可有效降低ZnO向发光层注入电子的势垒，提高载流子注入平衡。另外，我们还详细研究了PEI在不同浓度下对器件性能的影响，最终获得高性能的倒置WOLED器件。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "本实验所用二水合醋酸锌购买于Sigma Aldrich公司，4, 4′, 4″-Tris(carbazol-9-yl)-triphenylamine(TCTA)、N, N-bis(4-methylphenyl)benze-namine(TAPC)、2, 6-bis(3-(9H-carbazol-9-yl)phenyl)pyridine(26-Dczppy)、蓝色磷光染料bis[2-(4, 6-difluorophenyl)pyridinato-C2, N](picolinato)iridium(Ⅲ)(FIrpic)和橙色磷光染料IridiuM(Ⅲ) bis(4-phenylthieno[3, 2-c]" }, { "name": "text", "data": " pyridinato-N, C2′)acetylacetonate(PO-01)购自Nichem公司，分子结构如" }, { "name": "xref", "data": { "text": "图 1(a)", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1(a)" } ] } }, { "name": "text", "data": "所示。实验采用倒置器件结构ITO/ZnO/PEI/EML/TAPC/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Al，如" }, { "name": "xref", "data": { "text": "图 1(b)", "type": "fig", "rid": "Figure1", "data": [ { "name": "text", "data": "图 1(b)" } ] } }, { "name": "text", "data": "所示。将二水合醋酸锌溶解在乙醇溶剂中(0.1 g/mL)，乙醇胺为稳定剂(比例为2.8%)，配制成前驱体溶液。氧化铟锡(ITO)玻璃基板依次通过洗涤剂、有机溶剂、去离子水严格清洗后置于120 ℃的真空干燥箱中干燥。烘干的ITO玻璃基片紫外臭氧处理(UVO)8 min以增强其表面的亲水性。然后将ZnO前驱体溶液旋涂在ITO玻璃基板上，以200 ℃退火1 h形成ZnO(25 nm)薄膜。接下来依次将浓度分别为0.5, 0.8, 1.0, 1.3 mg/mL的PEI溶液旋涂在ZnO表面，以100 ℃退火30 min。然后将样品移入手套箱内，旋涂发光层并以80 ℃退火30 min，发光层(EML)为TCTA:26-Dczppy(2:8)+10%FIrpic+0.5%PO-01。最后将样品移入真空蒸发腔室内，在真空度为(2~3)×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa的条件下依次沉积40 nm TAPC、8 nm MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、100 nm Al。电流-电压-亮度特性通过Keithley 2602型数字源表和ST-86LA亮度计进行测试，电致发光(EL)光谱通过PR-655分光光度计测试。" } ] }, { "name": "fig", "data": { "id": "Figure1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "(a) 分子结构；(b)器件结构图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 1" } ], "title": [ { "name": "text", "data": "Schematic diagram of molecular structure(a) and device structure(b)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888779&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888779&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888779&type=middle" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "本文使用ZnO作为电子注入层可以将电子注入到发光层中，但由于ZnO薄膜表面陷阱的存在，导致界面激子猝灭严重，引入PEI层可有效钝化其表面陷阱，减少激子猝灭，同时改善器件的电子和空穴注入平衡，进一步提升器件效率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了选取合适的溶剂使PEI在ZnO表面具有良好的成膜性，先后测试了水和乙醇在ZnO表面的接触角，结果如" }, { "name": "xref", "data": { "text": "图 2", "type": "fig", "rid": "Figure2", "data": [ { "name": "text", "data": "图 2" } ] } }, { "name": "text", "data": "所示。水在ZnO表面的接触角为19.2°，乙醇在ZnO表面的接触角为8.9°。实验结果表明，ZnO表面具有一定的疏水性，因此PEI的水溶液在ZnO薄膜表面具有较大的接触角，表面附着力较小，不利于PEI在ZnO表面形成超薄的均匀薄膜；而PEI的乙醇溶液在ZnO薄膜表面接触角小，表面附着力较大，易旋涂形成均匀的超薄薄膜。" } ] }, { "name": "fig", "data": { "id": "Figure2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "ZnO/水(a)和ZnO/乙醇(b)的接触角" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 2" } ], "title": [ { "name": "text", "data": "Contact angles of ZnO/water(a) and ZnO/ethanol(b)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888781&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888781&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888781&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了研究PEI修饰层对ZnO表面功函数和电子注入能力的影响，表征了不同浓度PEI修饰ZnO的紫外光电子能谱(UPS)光谱，如" }, { "name": "xref", "data": { "text": "图 3(a)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(a)" } ] } }, { "name": "text", "data": "所示。随PEI浓度的增加，其表面功函数从4.16 eV降低到3.60 eV(PEI浓度为1.0 mg/mL)。实验结果表明，引入PEI修饰层可有效降低ZnO表面功函数，降低ZnO与发光层之间的电子注入势垒，提高电子注入效率。为了进一步说明不同厚度PEI对ZnO电子注入能力的增强，制备了器件结构为ITO/ZnO(25 nm)/PEI(" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": " mg/mL)/Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(100 nm)/LiF(1.0 nm)/Al(100 nm)的单电子器件，电流密度-电压特性如" }, { "name": "xref", "data": { "text": "图 3(b)", "type": "fig", "rid": "Figure3", "data": [ { "name": "text", "data": "图 3(b)" } ] } }, { "name": "text", "data": "所示。由结果可以看出，引入PEI界面修饰层可以明显提高电子电流，当PEI浓度为1.0 mg/mL时，相比未修饰的ZnO器件，电流密度提高了3个数量级。实验结果表明，引入PEI修饰层可有效提高电子注入效率。" } ] }, { "name": "fig", "data": { "id": "Figure3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "(a) ZnO和ZnO/PEI(0.5, 0.8, 1.0, 1.3 mg/mL)的UPS光谱；(b)单电子器件的电流密度-电压特性。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 3" } ], "title": [ { "name": "text", "data": "(a)UPS spectra of ZnO and ZnO/PEI (0.5, 0.8, 1.0, 1.3 mg/mL) were determined. (b)Current density " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " voltage characteristics of electron-only devices." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888783&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888783&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888783&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "众所周知，薄膜形态和粗糙度是限制器件性能的关键问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "b23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为研究PEI对ZnO薄膜表面形貌的影响，本实验使用原子力显微镜(AFM)对不同浓度PEI修饰的ZnO薄膜表面进行了表征，结果如" }, { "name": "xref", "data": { "text": "图 4(a)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(a)" } ] } }, { "name": "text", "data": "~" }, { "name": "xref", "data": { "text": "(e)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "(e)" } ] } }, { "name": "text", "data": "所示。ZnO薄膜(" }, { "name": "xref", "data": { "text": "图 4(a)", "type": "fig", "rid": "Figure4", "data": [ { "name": "text", "data": "图 4(a)" } ] } }, { "name": "text", "data": ")的表面粗糙度为1.44 nm，ZnO(25 nm)/PEI(0.5 mg/mL)、ZnO(25 nm)/PEI(0.8 mg/mL)、ZnO(25 nm)/PEI(1.0 mg/mL)、ZnO(25 nm)/PEI(1.3 mg/mL)薄膜的粗糙度分别为1.30, 1.26, 1.03, 0.98 nm。结果表明，未修饰的ZnO薄膜表面粗糙度较大, 这可能是由于表面陷阱的存在。在引入PEI修饰层后，对ZnO薄膜表面陷阱起到钝化作用，有效降低了ZnO薄膜的表面粗糙度，且随着PEI浓度的逐渐增加，其表面粗糙度逐渐减小，更有利于减少因ZnO表面陷阱而导致的激子猝灭，进而提升器件性能。" } ] }, { "name": "fig", "data": { "id": "Figure4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "(a) ZnO薄膜的AFM图像；(b)~(e)ZnO/PEI薄膜的AFM图像。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 4" } ], "title": [ { "name": "text", "data": "AFM images of ZnO film(a) and ZnO/PEI films((b)－(e))" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888784&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888784&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888784&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步研究PEI修饰层对器件性能的影响，我们制备了不同厚度PEI修饰层的IOLED器件。实验结果如" }, { "name": "xref", "data": { "text": "图 5(a)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(a)" } ] } }, { "name": "text", "data": "~" }, { "name": "xref", "data": { "text": "(c)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "(c)" } ] } }, { "name": "text", "data": "所示，PEI浓度分别为0.5，0.8，1.0，1.3 mg/mL，当PEI浓度为1.0 mg/mL时，器件性能达到最好，最大亮度和最高效率分别为11 722 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和16.0 cd·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。在亮度为2 000 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "时，器件的显色指数(CRI)为55。当PEI的浓度小于该值(即厚度较小)时，器件性能提升较小，这可能是由于过薄的PEI修饰层对空穴阻挡能力较弱，无法有效地阻挡空穴向阴极传输，导致部分空穴发生泄露，无法和电子在发光层进行复合。当PEI浓度逐渐增大(即厚度逐渐增大)时，器件性能提升较大，这是由于适宜厚度的PEI可以有效地阻挡空穴，平衡电子和空穴注入。除此之外，器件性能提升也可归因于PEI修饰层对ZnO表面陷阱的钝化，减少了激子在ZnO/EML界面的猝灭。但是当PEI浓度大于1.0 mg/mL时，器件效率又开始下降。虽然较厚的PEI层可以很好地阻止空穴在传输过程中发生猝灭，但由于PEI自身的绝缘特性，厚度较大的PEI层在阻挡空穴的同时也阻挡了电子向发光层传输，导致激子辐射复合率下降，器件性能降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "b25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "b24", "data": [ { "name": "text", "data": "24" } ] } } ], "rid": [ "b25", "b24" ], "text": "25-24", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图 5(d)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(d)" } ] } }, { "name": "text", "data": "为PEI浓度为1.0 mg/mL的电致发光光谱(EL)，发光层使用主客体掺杂体系，由蓝色磷光和橙色磷光形成互补色白光。由" }, { "name": "xref", "data": { "text": "图 5(d)", "type": "fig", "rid": "Figure5", "data": [ { "name": "text", "data": "图 5(d)" } ] } }, { "name": "text", "data": "可知，主客体材料发生了完全的能量转移，器件显示暖白光发射。" } ] }, { "name": "fig", "data": { "id": "Figure5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "器件的电流密度-电压(a)、亮度-电压(b)、电流效率-电压(c)和电致发光光谱(d)特性图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 5" } ], "title": [ { "name": "text", "data": "Current density-voltage(a), luminance-voltage(b), current efficiency-voltage(c) and electroluminescence spectra(d) characteristics of the device." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888786&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888786&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888786&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了研究PEI修饰层对ZnO表面缺陷的钝化作用，测试了石英衬底/EML、石英衬底/ZnO(25 nm)/EML和石英衬底/ZnO(25 nm)/PEI(1.0 mg/mL)/EML的稳态光致发光光谱(PL)，结果如" }, { "name": "xref", "data": { "text": "图 6", "type": "fig", "rid": "Figure6", "data": [ { "name": "text", "data": "图 6" } ] } }, { "name": "text", "data": "所示。与石英衬底/EML相比，增加ZnO层后，发光层的PL强度明显降低，在ZnO薄膜表面引入PEI进行修饰后，发光层的PL强度又得到了提高。这是由于ZnO薄膜表面缺陷的存在，导致激子严重猝灭，抑制了EML的发射，引入PEI修饰层可以有效钝化ZnO表面陷阱，减少激子猝灭，提高EML的发射强度。" } ] }, { "name": "fig", "data": { "id": "Figure6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "EML、ZnO/EML和ZnO/PEI/EML薄膜的光致发光光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 6" } ], "title": [ { "name": "text", "data": "Photoluminescence spectra of EML, ZnO/EML and ZnO/PEI/EML films." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888787&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888787&type=small", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=3888787&type=middle" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "因此，PEI修饰层的引入不仅降低了ZnO表面功函数，促进了电子注入，实现载流子注入平衡；同时对ZnO表面陷阱进行了钝化，减少了激子猝灭，提高了WOLED的效率。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文使用溶液法制备了高效倒置白光OLED，以ZnO作为电子注入层，引入PEI层作为界面修饰层，有效钝化其表面陷阱，降低了ZnO表面的粗糙度，提高了电子注入能力，使得电子注入和空穴注入更加平衡，从而提高了器件性能。在PEI最优浓度为1.0 mg/mL时，倒置白光OLED器件性能达到最佳，最大亮度和最高效率分别为11 722 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和16.0 cd·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，为后期倒置结构OLED器件的深入研究奠定了一定的基础。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "b1", "label": "1", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "由雪萌, 张新稳, 陈月花, 等.非掺杂型高效绿色磷光有机电致发光器件[J].发光学报, 2016, 37(8):961-966." } ] }, { "lang": "en", "text": [ { "name": "text", "data": "YOU X M, ZHANG X W, CHEN Y H, " }, { "name": "italic", "data": [ { "name": "text", "data": "et al" } ] }, { "name": "text", "data": ".. 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