圆盘尺寸对InP发光二极管的光谱调控 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "圆盘尺寸对InP发光二极管的光谱调控" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Spectral regulation of InP light emitting diode by disk size" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "李", "givenname": "猛", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "MENG", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "李猛(1997-)，男，河南开封人，硕士研究生，主要从事光机械微腔的研究。E-mail: 1063291048@qq.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845557&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845559&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845558&type=", "width": "21.72424316", "height": "26.74160767", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "李猛" }, { "name": "text", "data": "(1997-)，男，河南开封人，硕士研究生，主要从事光机械微腔的研究。E-mail: " }, { "name": "text", "data": "1063291048@qq.com" } ] ] } ], "email": "1063291048@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "孙", "givenname": "阳", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SUN", "givenname": "Yang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "纪", "givenname": "鑫", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "JI", "givenname": "Xin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "高", "givenname": "菲", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "GAO", "givenname": "Fei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "秦", "givenname": "飞飞", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "QIN", "givenname": "Feifei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "朱", "givenname": "刚毅", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHU", "givenname": "Gangyi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： zhugangyi@njupt.edu.cn", "data": [ { "name": "text", "data": "E-mail： zhugangyi@njupt.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "朱刚毅（1980-），男，河南洛阳人，博士研究生学历，副教授，主要从事微纳光电器件的研究。研究方向包括微腔激光，LED，探测器等。E-mail: zhugangyi@njupt.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845560&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845562&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845561&type=", "width": "19.64999962", "height": "27.51700020", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "朱刚毅" }, { "name": "text", "data": "（1980-），男，河南洛阳人，博士研究生学历，副教授，主要从事微纳光电器件的研究。研究方向包括微腔激光，LED，探测器等。E-mail: " }, { "name": "text", "data": "zhugangyi@njupt.edu.cn" } ] ] } ], "email": "zhugangyi@njupt.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "text": "南京邮电大学 通信与信息工程学院， 江苏 南京　210000", "data": [ { "name": "text", "data": "南京邮电大学 通信与信息工程学院， 江苏 南京　210000" } ] }, { "lang": "en", "text": "School of Communication and Information Engineering， Nanjing University of Posts and Telecommunications， Nanjing 210000， China", "data": [ { "name": "text", "data": "School of Communication and Information Engineering， Nanjing University of Posts and Telecommunications， Nanjing 210000， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "片上可集成光源一直是光通信领域中的研究热点。InP材料是构建通信波段光源的理想材料。本文采用标准半导体工艺在磷化铟（InP）衬底上制备了圆盘形微腔发光器件。通过制备四种尺寸的圆盘微腔发光二极管（LED），研究了尺寸大小对于器件的性能，包括光强、半高宽、中心波长偏移等参数的影响。本研究对于电驱动光源的制备和实现通信波段的光通信具有重要意义。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The on-chip integrated light source of light source has always been a research hotspot in the field of optical communication. InP material is an ideal material for constructing communication band light source. In this paper， InP-based microcavity light emitting devices are fabricated on indium phosphide （InP） substrate by standard semiconductor technology. By preparing four kinds of disk microcavity light emitting diodes （LED）， the influence of size on the performance of the device， including light intensity， full width at half maximum （FWHM）， center wavelength shift， etc. This research may be of great significance for the preparation of electric-driven light source and the realization of optical communication in communication band." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "磷化铟" } ], [ { "name": "text", "data": "发光二极管" } ], [ { "name": "text", "data": "圆盘微腔" } ], [ { "name": "text", "data": "光谱调控" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "indium phosphide" } ], [ { "name": "text", "data": "light emitting diodes" } ], [ { "name": "text", "data": "disk microcavity" } ], [ { "name": "text", "data": "spectra modulation" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "InP是一种重要的化合物半导体材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因为其在通信波段独特的发光和调控特性，InP器件在光通信领域有着非常重要的应用前景。相较于其它在红外波段有响应的材料，诸如Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Te" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ", WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ", 黑磷等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R3", "R4", "R5", "R6" ], "text": "3-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，InP具有化学结构稳定、兼容标准化硅光工艺，且可以大范围制备等优势。因此，InP基LED在光通信中有着广泛的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } } ], "rid": [ "R7", "R8", "R9", "R10", "R11", "R12" ], "text": "7-12", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。高效率、可靠、低成本的1.30 μm波段" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和1.55 μm波段" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R15", "R16", "R17" ], "text": "15-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "的发光器件的研究是光通信领域中的热点。现有研究结果表明，通过设计微腔结构有助于提升InP基LED 的通信性能发光特性，进而提升其在通信应用中的指标" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } } ], "rid": [ "R18", "R19", "R20", "R21", "R22", "R23" ], "text": "18-23", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。例如D. S. Mamedov " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将微腔引入InP基LED中，得到了1.55 μm 波段的超亮度窄线宽光源。Z. Y. Xiao" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等设计了带波导的圆边六边形谐振器，得到了13G Hz的3dB带宽。L. X. Zou" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研究了温度对InP微腔发光二极管通信特性的影响。相较于其它结构，圆形微盘腔具有更高的光场限域能力。基于内壁全反射的回音壁模式（WGM）光学微腔具有品质因子高、模式体积小的特点，在光子集成电路中得到广泛应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } } ], "rid": [ "R27", "R28", "R29", "R30" ], "text": "27-30", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。以往的研究中多集中于单个微腔性能的研究，尺寸渐变的系统研究较少。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文将微腔结构引入InP发光二极管中，设计了一种工作波长在1.55 μm附近的圆盘形InP基微腔LED。以自支持衬底为基础材料，采用光刻工艺、电感耦合等离子体（ICP）干法蚀刻工艺制备了InP基圆盘LED。通过制备不同尺寸的InP基圆盘，比较了不同尺寸下InP基圆盘LED的光、电特性的变化。在相同条件下，从电致发光（EL）强度、半高宽（FWHM）、开启电压和中心波长移动等方面研究了四种尺寸圆盘LED的光学特性。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实 验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用金属有机气相外延法（MOVPE）在磷化铟衬底上生长的应变InP层作为基础材料制备圆盘结构。该结构自低部到顶部依次为InP衬底和InP外延结构。InP的外延结构由1.5 μm的无参杂InP层（n-InP），228 nm的InP量子阱（QW）层和1.8 μm的InP层（p-InP）构成。本文中采用光刻和ICP刻蚀工艺制备InP器件。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "展示了InP基圆盘LED器件的制备过程。首先采用光刻工艺将旋涂在InP层上表面的一层光刻胶制备成一个个圆盘图形。利用光刻胶作掩膜，通过ICP刻蚀工艺将表面没有光刻胶的InP材料刻蚀至n-InP层。用丙酮溶液去除残余的光刻胶。其次，再次利用光刻工艺将旋涂在p-InP层和n-InP层上表面的一层光刻胶分别定义出p型区电极图形和n型区电极图形。通过电子束蒸镀在p-InP和n-InP层上电镀金属镍电极，最后用丙酮溶液去除残余的光刻胶。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "InP基圆盘LED器件制备工艺流程图：（a）采用光刻工艺制备掩膜层；（b）通过ICP刻蚀到n-InP层；（c）采用光刻工艺重新制备掩膜层；（d）电子束蒸发电镀电极；（e）丙酮溶液去除残余的光刻胶" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Fabrication diagram of InP based LED devices： （a） Lithography using lithography process； （b） etching into the n-InP layer by ICP； （c） photoresist layer is re-engraved by lithography process； （d） electron beam evaporation electroplating electrode； （e） acetone solution to remove residual photoresist." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845563&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845565&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845564&type=", "width": "117.67614746", "height": "56.96120834", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "利用电子扫描显微镜（SEM：SU8010）和光学显微镜 (Zeiss: OBSERVER. DIM ) 对InP基圆盘微腔进行了形貌表征。InP基圆盘形LED器件的SEM图像和光学图像如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。从" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a-d）中所展示的器件俯视图可以看出，所制备的圆盘LED器件具有良好的圆形结构，圆盘的直径依次为70 μm、110 μm、150 μm以及190 μm。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（e-f）中所展示的是单个器件的整体侧视图和局部放大侧视图。可以看出，圆盘侧面光滑，圆盘垂直方向的刻蚀深度约4 μm。从侧面SEM结果中可以观测到基础材料的分层结构。自上而下依次为p-InP层, 量子阱层， n-InP层和无掺杂的支撑层。光滑的侧壁和圆形的微盘结构使得这种光学微腔具有较低的光学损耗和较高的光学增益，从而保证所制备的圆盘LED器件具有较高的发光效率。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a） - （d） InP基圆盘LED的俯视SEM图像； （e） - （f） InP基圆盘LED的侧视SEM图像" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "（a） - （d） Top view SEM image of InP based disc LED； （e） - （f） Side view SEM image of InP based disc LED." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845566&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845568&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845567&type=", "width": "90.97061157", "height": "50.72146606", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用安捷伦源表（B2901）测量器件的I-V特性并提供驱动电流。采用光纤从器件上方采集光谱数据，利用高分辨率光谱仪(Ocean Optics HR4000)记录器件的电致发光(EL)光谱。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "显示了四种尺寸圆盘LED器件的伏安特性曲线。如图所示，直径70 μm的LED器件开启电压约为1.8 V，直径为110 μm的LED器件开启电压约为2.9 V，直径150 μm的LED器件开启电压约为2.7 V，直径190 μm的LED器件开启电压约为1.9 V。由于大尺寸器件的电极表面更光滑，更有利于电流注入。直径190 μm的圆盘LED器件的开启电压要小于直径110 μm和150 μm的圆盘LED器件的开启电压。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "不同微腔尺寸下器件的I-V特性曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "I-V curve of different devices" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845569&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845571&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845570&type=", "width": "58.93199921", "height": "49.98899841", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a-d）显示了直径为70 μm - 190 μm的圆盘LED器件在不同电流下的EL光谱。如图所示，器件呈现出1.2 μm-1.65 μm 范围的 EL谱。随着电流的增加，圆盘LED的光谱强度也逐渐增加。并且直径150 μm、190 μm的圆盘LED器件与直径70 μm、110 μm的圆盘LED器件的EL光谱相比，器件的半高宽更窄，且在大微盘尺寸下，出现了两个发光峰。光学共振使得光谱发生了振荡，该光谱与微腔尺寸增加后器件的限域能力增强有关。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）-（d）四种尺寸圆盘LED器件在不同电流下的EL光谱（a-70 μm，b-110 μm，c-150 μm，d-190 μm）" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "（a） - （d） EL spectra of four sizes of disk LED devices under different current. （a-70 μm， b-110 μm， c-150 μm， d-190 μm）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845572&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845574&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845573&type=", "width": "103.53305054", "height": "95.34523773", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步研究器件的光谱特性，" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "归纳了微腔尺寸相关的特征谱线（固定驱动电流3 mA）和驱动电流相关的半高宽以及峰值强度。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）中的归一化光谱显示，直径70 μm、110 μm、150 μm 和190 μm的发光峰值中心为1530 nm、1539 nm、1545 nm和1550 nm。随着尺寸的增加，器件的中心波长红移。由于大尺寸器件的微腔质量更高，直径为190 μm的器件中出现了更明显的光谱窄化和劈裂现象，这说明该器件中的振荡更剧烈。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）显示了电流相关的半高宽。随着电流强度的增大，直径70 μm的圆盘LED器件的半高宽从49.9 nm增大到55.9 nm，直径110 μm的圆盘LED器件的半高宽从42.7 nm增大到43.9 nm，直径150 μm的圆盘LED器件的半高宽从38.5 nm增大到40.3 nm，直径190 μm的圆盘LED器件的半高宽从41.1 nm减小到36.2 nm。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a）固定驱动电流3 mA，不同尺寸下器件的归一化EL光谱；不同驱动电流下，不同尺寸器件的半高宽曲线归纳（b）和峰值光谱强度归纳（c）" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "（a） Normalized EL spectra at 3 mA current of different cavity size； （b） FWHM curve summary and （c） peak EL intensity summary of different cavity size." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845576&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845578&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845577&type=", "width": "103.27648926", "height": "117.02442932", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）中的结果可以看出，随着驱动电流的增加，70 μm、110 μm和150 μm的器件的半高宽逐渐增加。该现象的原因是热效应导致的发光特性的减弱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。直径190 μm的样品中随着驱动电流的增加，半高宽逐渐减小。该现象可以归因于光学共振对微腔LED的光谱剪辑作用。对比" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b），" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（d）以及" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）插图中的数据可以佐证该现象。图中直径190 μm的样品的光谱更尖锐, 同时 在高电流下的光谱窄化现象更明显。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）显示了四种尺寸圆盘LED器件发光强度随电流增加的变化情况。在相同的电流强度下，直径为70 μm - 150 μm的圆盘LED器件随着尺寸的增大发光强度依次减弱。同时，在相同的驱动电流下尺寸越大，发光强度却越低。该现象与器件的电流密度有关。由于腔尺寸越大，电流密度越低，电注入效率越低，发光强度越弱。但是由于直径为190 μm的圆盘LED器件中腔体对光的增强效果更好，所以该尺寸的器件的发光强度却要高于直径为150 μm的圆盘LED器件。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "总结" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "中的光谱数据以及" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "中的伏安特性曲线可以发现，直径190 μm的圆盘LED器件的光学特性与电学特性和直径70 μm - 150 μm的圆盘LED器件所呈现出来的规律不同。明显的光谱劈裂和窄化现象出现在尺寸为190 μm的器件中。该现象可以归因于更高的微腔质量和表面电极质量。从" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a-d）中可以看出，直径190 μm的微腔侧壁更光滑，其上表面的金属电极更加光滑。因此，直径190 μm的圆盘LED器件的上表面与金属电极接触更好，" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "中的I-V特性更好，从而提高了该器件的发光性能与电学性能。同样的原因，直径190 μm的样品光场限域能力更强，容易出现振荡模式。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "此外，我们观察到了这四种尺寸圆盘LED器件的中心波长随着电流增大而红移的现象。如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（a）所示，当电流从1.0 mA增加到3.0 mA，直径70 μm的圆盘LED器件的中心波长从1530.1 nm移动到1530.27 nm，当电流从1.0 mA增加到3.0 mA，直径110 μm的圆盘LED器件的中心波长从1538.49 nm移动到1539.25 nm，当电流从3.0 mA增加到5.0 mA，直径150 μm的圆盘LED器件的中心波长从1543.83 nm移动到1545.17 nm，当电流从3.0 mA增加到7.0 mA，直径190 μm的圆盘LED器件的中心波长从1549.21 nm移动到1550.78 nm。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同尺寸下器件驱动电流相关的中心波长归纳（a）和对应的特性光谱（b）" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "Summary of （a） central wavelength under different currents and cavity sizes and （b） corresponding EL spectra." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845579&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845582&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845580&type=", "width": "118.75772095", "height": "60.53013992", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "从" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（b）中的光谱显示直径70 μm, 110 μm, 150 μm, 和190 μm的样品中的光谱移动量分别为0.17 nm、0.76 nm、1.34 nm和1.57 nm。该现象可以归因为于量子阱中的极化。随着驱动电压的增加，能带会发生弯曲，电子和空穴复合几率减小，引起发光效率下降、发光峰红移，这种现象称为量子限制斯塔克效应（QCSE）。结合" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）和" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（a）中的数据可以看出，在直径70 μm - 150 μm的器件中，器件的尺寸越大，发光效率越低，红移现象越明显。从" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（a）中的曲线斜率可以看出，与尺寸较大的器件相比，尺寸较小的器件随电流增大的红移量更小。这说明尺寸较小的圆盘LED的发光相对稳定，波动较小，中心波长不会随着电流的增加而发生较大的位移。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步阐明" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（c,d）中大尺寸（150 μm, 190 μm）LED器件出现的光谱劈裂，并且半高宽变窄的原因，本文通过有限时域差分法（FDTD）对70 μm圆盘和150 μm圆盘进行了光场仿真，结果如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（a）和（b）所示。可以看出，尺寸为70 μm的圆盘微腔的光场较为发散，对于光的束缚性差，而尺寸为150 μm的圆盘微腔的光场有很强的收敛性，对于光的束缚性好，微腔中可以存在共振模式。这佐证了大尺寸LED中光场限域能力更强的结论，也是光谱劈裂和窄化的原因。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "70 μm圆盘（a）和150 μm圆盘（b）峰值波长对应的光场仿真" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "70 μm disk （a） and 150 μm disk （b） light field simulation for central wavelength." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845583&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845585&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=40845584&type=", "width": "109.47207642", "height": "45.72317505", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "综上所述，我们通过光刻和ICP刻蚀工艺制备了发光中心波长在1.55 μm附近的InP基圆盘LED。在相同的条件下，对直径为70 μm, 110 μm, 150 μm, 和190 μm的InP基圆盘LED的电致发光特性进行了系统研究。在室温下的EL光谱测试中，对比分析了四种尺寸圆盘LED的发光强度、半高宽、开启电压和中心波长移动。结果表明，尺寸较大的InP基圆盘LED有较好的光学性能，并且电学性能也优于尺寸较小的器件。本研究对于实现通信波段工作的片上集成光源具有重要的意义。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "杨俊" }, { "name": "text", "data": "，" }, { "name": "text", "data": "赵有文" }, { "name": "text", "data": "，" }, { "name": "text", "data": "董志远" }, { "name": "text", "data": "，" }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "深能级缺陷对半绝缘InP材料电学补偿的影响" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "物理学报" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2007" }, { "name": "text", "data": "，" }, { "name": "text", "data": "56" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "1167" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1171" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3321/j.issn:1000-3290.2007.02.091" } ], "href": "http://dx.doi.org/10.3321/j.issn:1000-3290.2007.02.091" } } ], "title": "深能级缺陷对半绝缘InP材料电学补偿的影响" }, { "lang": "en", "text": [ { "name": "text", "data": "YANG J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ZHAO Y W" }, { "name": "text", "data": "，" }, { "name": "text", "data": "DONG Z Y" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Influence of deep level defects on electrical compensation in semi-insulating InP materials" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Acta Phys. Sin." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2007" }, { "name": "text", "data": "，" }, { "name": "text", "data": "56" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "1167" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1171" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3321/j.issn:1000-3290.2007.02.091" } ], "href": "http://dx.doi.org/10.3321/j.issn:1000-3290.2007.02.091" } } ], "title": "Influence of deep level defects on electrical compensation in semi-insulating InP materials" } ] }, { "id": "R2", "label": "2", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "马小涛" }, { "name": "text", "data": "，" }, { "name": "text", "data": "郑婉华" }, { "name": "text", "data": "，" }, { "name": "text", "data": "任刚" }, { "name": "text", "data": "，" }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "感应耦合等离子体刻蚀InP/InGaAsP二维光子晶体结构的研究" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "物理学报" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2007" }, { "name": "text", "data": "，" }, { "name": "text", "data": "56" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "977" }, { "name": "text", "data": "-" }, { "name": "text", "data": "981" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.7498/aps.56.977" } ], "href": "http://dx.doi.org/10.7498/aps.56.977" } } ], "title": "感应耦合等离子体刻蚀InP/InGaAsP二维光子晶体结构的研究" }, { "lang": "en", "text": [ { "name": "text", "data": "MA X T" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ZHENG W H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "REN G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Acta Phys. Sin." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2007" }, { "name": "text", "data": "，" }, { "name": "text", "data": "56" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "977" }, { "name": "text", "data": "-" }, { "name": "text", "data": "981" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.7498/aps.56.977" } ], "href": "http://dx.doi.org/10.7498/aps.56.977" } } ], "title": "Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal" } ] }, { "id": "R3", "label": "3", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GUO B" }, { "name": "text", "data": "，" }, { "name": "text", "data": "XIAO Q L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WANG S H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "2D layered materials： synthesis， nonlinear optical properties， and device applications" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Laser Photonics Rev." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "，" }, { "name": "text", "data": "13" }, { "name": "text", "data": "（" }, { "name": "text", "data": "12" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "1800327" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/lpor.201800327" } ], "href": "http://dx.doi.org/10.1002/lpor.201800327" } } ], "title": "2D layered materials： synthesis， nonlinear optical properties， and device applications" } ] }, { "id": "R4", "label": "4", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG K" }, { "name": "text", "data": "，" }, { "name": "text", "data": "SZYDłOWSKA B M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WANG G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ultrafast nonlinear excitation dynamics of black phosphorus nanosheets from visible to mid-infrared" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "ACS nano" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2016" }, { "name": "text", "data": "，" }, { "name": "text", "data": "10" }, { "name": "text", "data": "（" }, { "name": "text", "data": "7" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "6923" }, { "name": "text", "data": "-" }, { "name": "text", "data": "6932" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/acsnano.6b02770" } ], "href": "http://dx.doi.org/10.1021/acsnano.6b02770" } } ], "title": "Ultrafast nonlinear excitation dynamics of black phosphorus nanosheets from visible to mid-infrared" } ] }, { "id": "R5", "label": "5", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BIKORIMANA S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LAMA P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WALSER A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Nonlinear optical responses in two-dimensional transition metal dichalcogenide multilayer： WS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "， WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "， MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " and Mo" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "W" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Opt. Express." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2016" }, { "name": "text", "data": "，" }, { "name": "text", "data": "24" }, { "name": "text", "data": "（" }, { "name": "text", "data": "18" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "20685" }, { "name": "text", "data": "-" }, { "name": "text", "data": "20695" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/oe.24.020685" } ], "href": "http://dx.doi.org/10.1364/oe.24.020685" } } ], "title": "Nonlinear optical responses in two-dimensional transition metal dichalcogenide multilayer： WS2， WSe2， MoS2 and Mo0.5W0.5S2" } ] }, { "id": "R6", "label": "6", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ZHAO C" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LI Y" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Broadband optical and microwave nonlinear response in topological insulator" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Opt. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2014" }, { "name": "text", "data": "，" }, { "name": "text", "data": "4" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "587" }, { "name": "text", "data": "-" }, { "name": "text", "data": "596" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/ome.4.000587" } ], "href": "http://dx.doi.org/10.1364/ome.4.000587" } } ], "title": "Broadband optical and microwave nonlinear response in topological insulator" } ] }, { "id": "R7", "label": "7", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "TAKIGUCHI M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ZHANG G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "SASAKI S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Direct modulation of a single InP/lnAs nanowire light-emitting diode" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "，" }, { "name": "text", "data": "112" }, { "name": "text", "data": "（" }, { "name": "text", "data": "25" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "251106.1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "251106.5" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1063/1.5037011" } ], "href": "http://dx.doi.org/10.1063/1.5037011" } } ], "title": "Direct modulation of a single InP/lnAs nanowire light-emitting diode" } ] }, { "id": "R8", "label": "8", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HA N" }, { "name": "text", "data": "，" }, { "name": "text", "data": "MANO T" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WU Y N" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Wavelength extension beyond 1.5 m in symmetric InAs quantum dots grown on InP（111）A using droplet epitaxy" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2016" }, { "name": "text", "data": "，" }, { "name": "text", "data": "9" }, { "name": "text", "data": "（" }, { "name": "text", "data": "10" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "101201.1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "101201.4" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.7567/apex.9.101201" } ], "href": "http://dx.doi.org/10.7567/apex.9.101201" } } ], "title": "Wavelength extension beyond 1.5 m in symmetric InAs quantum dots grown on InP（111）A using droplet epitaxy" } ] }, { "id": "R9", "label": "9", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "GNATEK D" }, { "name": "text", "data": "，" }, { "name": "text", "data": "TAKIGUCHI M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Nanowire-based telecom-band light-emitting diodes with efficient light extraction" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Jpn. J. Appl. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "59" }, { "name": "text", "data": "（" }, { "name": "text", "data": "10" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "105003" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.35848/1347-4065/abb8b9" } ], "href": "http://dx.doi.org/10.35848/1347-4065/abb8b9" } } ], "title": "Nanowire-based telecom-band light-emitting diodes with efficient light extraction" } ] }, { "id": "R10", "label": "10", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "TAKIGUCHI M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "TATENO K" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Sci. Adv." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "，" }, { "name": "text", "data": "5" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "eaat8896" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1126/sciadv.aat8896" } ], "href": "http://dx.doi.org/10.1126/sciadv.aat8896" } } ], "title": "Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature" } ] }, { "id": "R11", "label": "11", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG Y" }, { "name": "text", "data": "，" }, { "name": "text", "data": "KASAI K" }, { "name": "text", "data": "，" }, { "name": "text", "data": "YOSHIDA M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "60 Gbit/s， 64 QAM LD-based injection-locked coherent heterodyne transmission over 160 km with a spectral efficiency of 9 bit/s/Hz" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Ieice. Electron. Expr." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2014" }, { "name": "text", "data": "，" }, { "name": "text", "data": "11" }, { "name": "text", "data": "（" }, { "name": "text", "data": "18" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "20140641" }, { "name": "text", "data": "-" }, { "name": "text", "data": "20140641" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1587/elex.11.20140641" } ], "href": "http://dx.doi.org/10.1587/elex.11.20140641" } } ], "title": "60 Gbit/s， 64 QAM LD-based injection-locked coherent heterodyne transmission over 160 km with a spectral efficiency of 9 bit/s/Hz" } ] }, { "id": "R12", "label": "12", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "逄永秀" }, { "name": "text", "data": "，" }, { "name": "text", "data": "龚连根" }, { "name": "text", "data": "，" }, { "name": "text", "data": "府治平" }, { "name": "text", "data": "，" }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "1.55 μm InGaAsP/InP LED的研究" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": "， " }, { "name": "text", "data": "1990" }, { "name": "text", "data": "，" }, { "name": "text", "data": "11" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "132" }, { "name": "text", "data": "-" }, { "name": "text", "data": "136" }, { "name": "text", "data": "." } ], "title": "1.55 μm InGaAsP/InP LED的研究" }, { "lang": "en", "text": [ { "name": "text", "data": "PANG Y X" }, { "name": "text", "data": "，" }, { "name": "text", "data": "GONG L G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "FU Z P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Study on InGaAsP-InP LED emitting at 1.55 μm wavelength" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chinese J. Lumin." }, { "name": "text", "data": "， " }, { "name": "text", "data": "1990" }, { "name": "text", "data": "，" }, { "name": "text", "data": "11" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "132" }, { "name": "text", "data": "-" }, { "name": "text", "data": "136" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Study on InGaAsP-InP LED emitting at 1.55 μm wavelength" } ] }, { "id": "R13", "label": "13", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WARD M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "FARROW T" }, { "name": "text", "data": "，" }, { "name": "text", "data": "SEE P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Electrically driven telecommunication wavelength single-photon source" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2007" }, { "name": "text", "data": "，" }, { "name": "text", "data": "90" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "063512" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1063/1.2472172" } ], "href": "http://dx.doi.org/10.1063/1.2472172" } } ], "title": "Electrically driven telecommunication wavelength single-photon source" } ] }, { "id": "R14", "label": "14", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "NISHIWAKI H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "KITANO K" }, { "name": "text", "data": "，" }, { "name": "text", "data": "NAKAJIMA H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Organic dye 25 GB write-once disk with in-groove structure" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Jpn. J. Appl. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2006" }, { "name": "text", "data": "，" }, { "name": "text", "data": "45" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2B" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "1452" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1455" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1143/jjap.45.1452" } ], "href": "http://dx.doi.org/10.1143/jjap.45.1452" } } ], "title": "Organic dye 25 GB write-once disk with in-groove structure" } ] }, { "id": "R15", "label": "15", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN Y X" }, { "name": "text", "data": "，" }, { "name": "text", "data": "SHEN G D" }, { "name": "text", "data": "，" }, { "name": "text", "data": "GUO W L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "AlGaInP—Si glue bonded high performance light emitting diodes" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. Phys. B." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2011" }, { "name": "text", "data": "，" }, { "name": "text", "data": "20" }, { "name": "text", "data": "（" }, { "name": "text", "data": "8" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "087203" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1088/1674-1056/20/8/087203" } ], "href": "http://dx.doi.org/10.1088/1674-1056/20/8/087203" } } ], "title": "AlGaInP—Si glue bonded high performance light emitting diodes" } ] }, { "id": "R16", "label": "16", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MIKULICS M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WINDEN A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "MARSO M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. phys. lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2016" }, { "name": "text", "data": "，" }, { "name": "text", "data": "109" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "L1524" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1063/1.4960007" } ], "href": "http://dx.doi.org/10.1063/1.4960007" } } ], "title": "Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics" } ] }, { "id": "R17", "label": "17", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MIYAZAWA T" }, { "name": "text", "data": "，" }, { "name": "text", "data": "OKUMURA S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "HIROSE S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "First demonstration of electrically driven 1.55 µm single-photon generator" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Jpn. J. Appl. Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2008" }, { "name": "text", "data": "，" }, { "name": "text", "data": "47" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "2880" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2883" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1143/jjap.47.2880" } ], "href": "http://dx.doi.org/10.1143/jjap.47.2880" } } ], "title": "First demonstration of electrically driven 1.55 µm single-photon generator" } ] }, { "id": "R18", "label": "18", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WENG H Z" }, { "name": "text", "data": "，" }, { "name": "text", "data": "YANG Y D" }, { "name": "text", "data": "，" }, { "name": "text", "data": "XIAO J L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Spectral engineering for circular-side square microlasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Opt. Expr." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "，" }, { "name": "text", "data": "26" }, { "name": "text", "data": "（" }, { "name": "text", "data": "8" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "9409" }, { "name": "text", "data": "-" }, { "name": "text", "data": "9414" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/oe.26.009409" } ], "href": "http://dx.doi.org/10.1364/oe.26.009409" } } ], "title": "Spectral engineering for circular-side square microlasers" } ] }, { "id": "R19", "label": "19", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "JIANG X F" }, { "name": "text", "data": "，" }, { "name": "text", "data": "XIAO Y F" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ZOU C L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly unidirectional emission and ultralow‐threshold lasing from on‐chip ultrahigh‐Q microcavities" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2012" }, { "name": "text", "data": "，" }, { "name": "text", "data": "24" }, { "name": "text", "data": "（" }, { "name": "text", "data": "35" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "OP260" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/adma.201201229" } ], "href": "http://dx.doi.org/10.1002/adma.201201229" } } ], "title": "Highly unidirectional emission and ultralow‐threshold lasing from on‐chip ultrahigh‐Q microcavities" } ] }, { "id": "R20", "label": "20", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZOU C L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "SUN F W" }, { "name": "text", "data": "，" }, { "name": "text", "data": "DONG C H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-Q and unidirectional emission whispering gallery modes： Principles and design" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "IEEE. J. Sel. Top. Quant." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2012" }, { "name": "text", "data": "，" }, { "name": "text", "data": "19" }, { "name": "text", "data": "（" }, { "name": "text", "data": "5" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "6" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/jstqe.2012.2220896" } ], "href": "http://dx.doi.org/10.1109/jstqe.2012.2220896" } } ], "title": "High-Q and unidirectional emission whispering gallery modes： Principles and design" } ] }, { "id": "R21", "label": "21", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DEPRETER B" }, { "name": "text", "data": "，" }, { "name": "text", "data": "MOERMAN I" }, { "name": "text", "data": "，" }, { "name": "text", "data": "BAETS R" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "InP 1.3 μm microcavity LEDs with high quantum efficiency" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Cryst. Growth." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2000" }, { "name": "text", "data": "，" }, { "name": "text", "data": "221" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "674" }, { "name": "text", "data": "-" }, { "name": "text", "data": "678" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1016/s0022-0248(00)00798-3" } ], "href": "http://dx.doi.org/10.1016/s0022-0248(00)00798-3" } } ], "title": "InP 1.3 μm microcavity LEDs with high quantum efficiency" } ] }, { "id": "R22", "label": "22", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHOU W" }, { "name": "text", "data": "，" }, { "name": "text", "data": "BHATTACHARYA P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "QASAIMEH O" }, { "name": "text", "data": ". " }, { "name": "text", "data": "InP-based cylindrical microcavity light-emitting diodes" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "IEEE. J. Sel. Top. Quant." }, { "name": "text", "data": "， " }, { "name": "text", "data": "37" }, { "name": "text", "data": " （" }, { "name": "text", "data": "2001） 48" }, { "name": "text", "data": "-" }, { "name": "text", "data": "54" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/3.892723" } ], "href": "http://dx.doi.org/10.1109/3.892723" } } ], "title": "InP-based cylindrical microcavity light-emitting diodes" } ] }, { "id": "R23", "label": "23", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DEPRETER B" }, { "name": "text", "data": "，" }, { "name": "text", "data": "MOERMAN I" }, { "name": "text", "data": "，" }, { "name": "text", "data": "BAETS R" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "InP-based 1300nm microcavity LEDs with 9% quantum efficiency" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Electron. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2002" }, { "name": "text", "data": "，" }, { "name": "text", "data": "36" }, { "name": "text", "data": "（" }, { "name": "text", "data": "15" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "1303" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1304" }, { "name": "text", "data": "." } ], "title": "InP-based 1300nm microcavity LEDs with 9% quantum efficiency" } ] }, { "id": "R24", "label": "24", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MAMEDOV D S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "PROKHOROV V V" }, { "name": "text", "data": "，" }, { "name": "text", "data": "YAKUBOVICH S D" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Broadband radiation sources based on quantum-well superluminescent diodes emitting at 1550 nm" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Quant. Electron." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2007" }, { "name": "text", "data": "，" }, { "name": "text", "data": "33" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "511" }, { "name": "text", "data": "." } ], "title": "Broadband radiation sources based on quantum-well superluminescent diodes emitting at 1550 nm" } ] }, { "id": "R25", "label": "25", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "XIAO Z X" }, { "name": "text", "data": "，" }, { "name": "text", "data": "HUANG Y Z" }, { "name": "text", "data": "，" }, { "name": "text", "data": "YANG Y D" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Single-mode unidirectional-emission circular-side hexagonal resonator microlasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Opt. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "，" }, { "name": "text", "data": "42" }, { "name": "text", "data": "（" }, { "name": "text", "data": "7" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "1309" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1312" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/ol.42.001309" } ], "href": "http://dx.doi.org/10.1364/ol.42.001309" } } ], "title": "Single-mode unidirectional-emission circular-side hexagonal resonator microlasers" } ] }, { "id": "R26", "label": "26", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZOU L X" }, { "name": "text", "data": "，" }, { "name": "text", "data": "HUANG Y Z" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LIU B W" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Thermal and high speed modulation characteristics for AlGaInAs/InP microdisk lasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Opt. Expr." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "，" }, { "name": "text", "data": "23" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "2879" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2888" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/oe.23.002879" } ], "href": "http://dx.doi.org/10.1364/oe.23.002879" } } ], "title": "Thermal and high speed modulation characteristics for AlGaInAs/InP microdisk lasers" } ] }, { "id": "R27", "label": "27", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CAMPENHOUT J V" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ROMEO P R" }, { "name": "text", "data": "，" }, { "name": "text", "data": "REGRENY P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Opt. Expr." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2007" }, { "name": "text", "data": "，" }, { "name": "text", "data": "15" }, { "name": "text", "data": "（" }, { "name": "text", "data": "11" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "6744" }, { "name": "text", "data": "-" }, { "name": "text", "data": "6749" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/oe.15.006744" } ], "href": "http://dx.doi.org/10.1364/oe.15.006744" } } ], "title": "Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit" } ] }, { "id": "R28", "label": "28", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MUNSCH M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "CLAUDON J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "MALIK N S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Room temperature， continuous wave lasing in microcylinder and microring quantum dot laser diodes" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2012" }, { "name": "text", "data": "，" }, { "name": "text", "data": "100" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "151106" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1063/1.3678031" } ], "href": "http://dx.doi.org/10.1063/1.3678031" } } ], "title": "Room temperature， continuous wave lasing in microcylinder and microring quantum dot laser diodes" } ] }, { "id": "R29", "label": "29", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YANG Y D" }, { "name": "text", "data": "，" }, { "name": "text", "data": "XIAO J L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LIU B W" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Mode characteristics and vertical radiation loss for AlGaInAs/InP microcylinder lasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Opt. Soc. Am. B." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "，" }, { "name": "text", "data": "32" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "439" }, { "name": "text", "data": "-" }, { "name": "text", "data": "444" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/josab.32.000439" } ], "href": "http://dx.doi.org/10.1364/josab.32.000439" } } ], "title": "Mode characteristics and vertical radiation loss for AlGaInAs/InP microcylinder lasers" } ] }, { "id": "R30", "label": "30", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "TANG S J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LI B B" }, { "name": "text", "data": "，" }, { "name": "text", "data": "XIAO Y F" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optical sensing with whispering-gallery microcavities" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Phys." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "，" }, { "name": "text", "data": "48" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "137" }, { "name": "text", "data": "-" }, { "name": "text", "data": "147" }, { "name": "text", "data": "." } ], "title": "Optical sensing with whispering-gallery microcavities" } ] }, { "id": "R31", "label": "31", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHOI I" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LEE K" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LEE C R" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Application of Hexagonal Boron Nitride to a Heat-Transfer Medium of an InGaN/GaN Quantum-Well Green LED" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Acs. Appl. Mater. Inter." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "，" }, { "name": "text", "data": "11" }, { "name": "text", "data": "（" }, { "name": "text", "data": "20" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "18876" }, { "name": "text", "data": "-" }, { "name": "text", "data": "18884" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/acsami.9b05320" } ], "href": "http://dx.doi.org/10.1021/acsami.9b05320" } } ], "title": "Application of Hexagonal Boron Nitride to a Heat-Transfer Medium of an InGaN/GaN Quantum-Well Green LED" } ] }, { "id": "R32", "label": "32", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "FENG M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ZHOU R" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Thermal characterization of electrically injected GaN-based microdisk lasers on Si" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Expr." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2021" }, { "name": "text", "data": "，" }, { "name": "text", "data": "13" }, { "name": "text", "data": "（" }, { "name": "text", "data": "7" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "74002.1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "74002.5" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.35848/1882-0786/ab95f0" } ], "href": "http://dx.doi.org/10.35848/1882-0786/ab95f0" } } ], "title": "Thermal characterization of electrically injected GaN-based microdisk lasers on Si" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20220434", "clc": [ [ { "name": "text", "data": "O482.31" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032（XXXX）XX-0001-07", "citeme": [ { "data": [ { "name": "text", "data": "李猛,孙阳,纪鑫等.圆盘尺寸对InP发光二极管的光谱调控[J].发光学报,DOI:10.37188/CJL.20220434" } ], "text": "李猛,孙阳,纪鑫等.圆盘尺寸对InP发光二极管的光谱调控[J].发光学报,DOI:10.37188/CJL.20220434" }, { "data": [ { "name": "text", "data": "LI MENG,SUN Yang,JI Xin,et al.Spectral regulation of InP light emitting diode by disk size[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20220434" } ], "text": "LI MENG,SUN Yang,JI Xin,et al.Spectral regulation of InP light emitting diode by disk size[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20220434" } ], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "江苏省自然科学青年基金（No.BK20210593），国家自然科学基金青年基金项目（62204127）， 发光学及应用国家重点实验室开放课题（SKLA⁃2021⁃04）。" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by the Natural Science Foundation of Jiangsu Province（No.BK20210593），National Natural Science Foundation of China （62204127） and State Key Laboratory of Luminescence and Applications（SKLA⁃2021⁃04）." } ] } ], "history": { "epub": "2023-03-09", "opub": "2023-03-09" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "originalSource": [] }