Determination and Experimental Study of OLED Junction Temperature Based on PtOEP Molecular Temperature Probe Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于PtOEP分子温度探针对OLED结温的判定及实验研究" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Determination and Experimental Study of OLED Junction Temperature Based on PtOEP Molecular Temperature Probe" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "丁", "givenname": "川", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "DING", "givenname": "Chuan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "丁川（1997－），男，山西运城人，硕士研究生，2020年于长沙理工大学获得学士学位，主要从事图案化OLED的研究。E-mail： 1422912492@qq.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544718&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544720&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544719&type=", "width": "21.44007301", "height": "29.97796631", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "丁川" }, { "name": "text", "data": "（1997－），男，山西运城人，硕士研究生，2020年于长沙理工大学获得学士学位，主要从事图案化OLED的研究。E-mail： " }, { "name": "text", "data": "1422912492@qq.com" } ] ] } ], "email": "1422912492@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "姜", "givenname": "雪松", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "JIANG", "givenname": "Xue-song", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "许", "givenname": "正印", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XU", "givenname": "Zheng-yin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "忠强", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Zhong-qiang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "华", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Hua", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： wanghua001@tyut.edu.cn", "data": [ { "name": "text", "data": "E-mail： wanghua001@tyut.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "王华（1977-），男，山西平定县人，博士，教授，博士生导师，2007年于太原理工大学获得博士学位，主要从事有机半导体光电材料与器件的研究。E-mail： wanghua001@tyut.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544721&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544723&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544722&type=", "width": "21.40607452", "height": "29.93060303", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "王华" }, { "name": "text", "data": "（1977-），男，山西平定县人，博士，教授，博士生导师，2007年于太原理工大学获得博士学位，主要从事有机半导体光电材料与器件的研究。E-mail： " }, { "name": "text", "data": "wanghua001@tyut.edu.cn" } ] ] } ], "email": "wanghua001@tyut.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "太原理工大学 新材料界面科学与工程教育部重点实验室，山西 太原 030024", "data": [ { "name": "text", "data": "太原理工大学 新材料界面科学与工程教育部重点实验室，山西 太原 030024" } ] }, { "lang": "en", "label": "1", "text": "Key Laboratory of Interface Science and Engineering in Advanced Materials， Ministry of Education， Taiyuan University of Technology， Taiyuan， 030024， China", "data": [ { "name": "text", "data": "Key Laboratory of Interface Science and Engineering in Advanced Materials， Ministry of Education， Taiyuan University of Technology， Taiyuan， 030024， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "江苏三月科技股份有限公司， 江苏 无锡 214112", "data": [ { "name": "text", "data": "江苏三月科技股份有限公司， 江苏 无锡 214112" } ] }, { "lang": "en", "label": "2", "text": "Jiangsu Sunera Technology Co.， Ltd， Wuxi， 214112， China", "data": [ { "name": "text", "data": "Jiangsu Sunera Technology Co.， Ltd， Wuxi， 214112， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "本文使用正性光敏聚酰亚胺（PSPI）和光刻技术制备一系列不同图案化的有机发光二极管（OLED）器件，以铂八乙基卟啉（PtOEP）作为分子温度探针探究不同图案化OLED所产生的热效应，并进一步研究不同热效应对OLED器件的影响。结果表明：像素尺寸在500 μm以下时，器件工作中产生的热效应与像素尺寸呈正相关，且与线宽和总开口面积无关；而像素尺寸达到500 μm以上时，器件中产生的热效应没有进一步增长。其中5 μm孔径的像素在室温10 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电流密度下工作时，器件的温度为303.29 K，而相同条件下像素尺寸为2000 μm时，器件温度可高达314.65 K，当环境温度升至323.15 K时，器件所产生的热效应呈现相同的趋势。具有不同热效应器件的外量效率曲线表明：器件温度的升高导致外量子效率降低，其原因是温度升高导致载流子迁移速率加快，但同时也使三线态激子之间及激子与极化子之间的碰撞概率升高，从而加剧激子猝灭，导致效率下降。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The thermal effect of OLED device was studied by PtOEP molecular temperature probe and different patterned OLED substrate， which was prepared with positive photosensitive polyimide （PSPI） and photolithography.The results show when the pixel size is less than 500 μm， the thermal effect is positively correlated with the pixel size， and independent of the line width and total opening area.However， when the pixel size reaches more than 500 μm， the thermal effect does not increase further.When 5 μm pixel works at a current density of 10 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2 " } ] }, { "name": "text", "data": "at room temperature， the temperature of the device is 303.29K.When the pixel size is 2000 μm under the same conditions， the device temperature can reach 314.65K.When the ambient temperature rises to 323.15K， the thermal effect of the device shows the same trend.The EQE curves of devices with different thermal effects show that the increase of device temperature leads to the decrease of external quantum efficiency.The reason is that the increase of temperature improves carrier migration rate， but also increases the probability of collision between triplet excitons and between excitons and polarons， which leads to the exciton quenching and the decrease of efficiency." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "图案化OLED" } ], [ { "name": "text", "data": "PtOEP" } ], [ { "name": "text", "data": "分子温度探针" } ], [ { "name": "text", "data": "结温" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "Patterned OLED" } ], [ { "name": "text", "data": "PtOEP" } ], [ { "name": "text", "data": "Molecular temperature probe" } ], [ { "name": "text", "data": "Junction temperature" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "随着显示技术的发展，相较于液晶显示器(LCD)而言，OLED具有高效、轻薄、响应速度快等优点，从而成为新一代显示技术" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而至今为止OLED的寿命和效率仍是制约其发展的重要因素。除水氧因素外，其自身所产生的热效应对器件寿命和效率的影响同样不可小觑。得益于光刻技术的发展，OLED的分辨率逐步攀升，高分辨率的OLED已逐步被应用于AR、VR等新兴产业" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而分辨率的提升源于像素点的缩小，不同大小的像素阵列不仅导致分辨率不同，其对OLED的电流注入，热效应等均会产生影响，而电流注入以及热效应将直接影响OLED器件的发光效率和寿命" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R2", "R3" ], "text": "2-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在手机高负荷运行10-60分钟时，手机CPU附近温度可高达50 ℃左右" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其温度将与OLED本身所产生的热效应相叠加，对OLED屏幕产生不利影响。在OLED工作过程中，传热方式主要为热传导、辐射和对流等方式，而对于大尺寸器件对流较差且缺乏横向热传输" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R5", "R6" ], "text": "5-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因此在大尺寸器件中可能会产生更为严重的热效应。同时局部焦耳热会加速材料的劣化并产生发光衰减、亮度分布不均匀等问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R7", "R8", "R9" ], "text": "7-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此对于实际应用中OLED不同像素所产生热效应的研究意义重大。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "针对热效应的研究通常采用红外热成像测试" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和有限元分析" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等方式获取温度信息。而红外热成像测试等手段只能测得器件表面温度，难以准确获取结温。因此人们将目光转移至分子温度计，随着分子温度探针技术的成熟化，其不仅可以获取半导体工作过程中的实际温度，且具有高灵敏度、快速响应和在线可视化等优点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，已逐步被应用于微小空间的温度探测。其中PtOEP中特有的热填充的三线态使其具有温度敏感性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R13", "R14", "R15", "R16", "R17" ], "text": "13-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，可通过光谱得到器件中的温度，从而快速准确地探测不同大小的像素所产生的热效应。因此本文在PSPI图案化的基础上，制备PtOEP红光器件，并利用PtOEP温度敏感性探测OLED器件的结温，探究不同像素所产生的热效应以及热效应对OLED器件的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "OLED器件中所使用的有机材料均由江苏三月科技股份有限公司提供，图案化材料PSPI由烟台三月科技有限责任公司提供，器件结构为：ITO/N-[1，1′-联苯]-2-基-2′，7′-双(1,1-二甲基乙基)-N-(9,9-二甲基-9H-芴-2-基)-9,9′-螺并[9H-芴]" }, { "name": "text", "data": "-2-胺(NYS)：3%(1E，2E，3E)-1,2,3-三(1-(4-乙炔基-2,3,5,6-四甲基苯基)丙-2-炔-1-亚基)环丙烷(ETP)(10 nm)/NYS(40 nm)/N-[1，1'-联苯]-4-基-N-(9,9-二甲基-9H-芴-2-基)-11,11-二甲基-11H-苯并[b]" }, { "name": "text", "data": "芴-5-胺(NHF)(10 nm)/4,4-二(9-咔唑)联苯(CBP)：5%PtOEP(30 nm)/2-(5′-(4,6-二苯基嘧啶-2-基)-[1，1'；2′-三联苯基]-3-基)-4,6-二苯基-1,3,5-三嗪(DTD)：Liq(1:1)(40 nm)/Yb(1 nm)/Ag：Mg(9:1)(80 nm)，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "a所示，器件能级排列如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "b所示，有机材料的分子结构如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "c所示。器件制备流程如下：首先将ITO基板放入清洗机清洗，清洗步骤为：(1)高压冲洗，(2)338.7 K热水冲洗，(3)使用M-L20清洗剂刷洗，(4)清水刷洗，(5) 338.7 K热水冲洗，(6)高压冲洗，(7)兆声波清洗，(8) 338.7 K热水冲洗，(9)1500 r/min甩干，(10)200 ℃/30 min烘干。其次使用PSPI在ITO基板上形成0.5 μm厚的薄膜，经过100 ℃/120 s的预固化后，使用光刻机对其曝光，再通过碱性显影液显影，使其形成图案化，图案化之后将其在220 ℃下完成最终固化，形成图案化基板。随后将基板放入清洗机清洗，清洗流程同上。将基板传入真空腔体的有机腔，真空度为3.96×10-7 Torr，依次沉积NYS：3%ETP(10 nm)、NYS(40 nm)、NHF(10 nm)、CBP：5%PtOEP(30 nm)、DTD：Liq(1:1)(40 nm)。再将基板传入真空度为1.01×10-7 Torr的金属腔，依次蒸镀Yb(1 nm)和Ag：Mg(9:1)(80 nm)。最后将器件传入氮气氛围的手套箱内进行点胶封装。文中采用的蒸镀设备为长州产业株式会社1504-10117-01型号的蒸镀设备。封装系统采用布劳恩惰性气体系统(上海)有限公司、MB200MOD型号的惰性气氛手套箱OLED器件用封装系统。器件的光电性能测试采用弗士达公司的FS-1000GA4测试系统。显微镜采用Nikon公司的ECLIPSELV100ND金相显微镜，用以观察光刻所形成的图案。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a）器件结构示意图；（b）能级图；（c）有机材料的分子结构" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "（a） Schematic diagram of device structure； （b） Energy level diagram； （c） Molecular structures of organic materials" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544724&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544726&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544725&type=", "width": "77.69583130", "height": "79.73188019", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　图案化基板制备" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "图案化基板的设计如下：在50 mm×50 mm基板中四个2 mm×2 mm的正方形内通过光刻形成不同的像素排列。不同像素阵列的显微镜图如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。设计像素形状为正方形，边长分别为6 μm、50 μm、500 μm，其中50 μm孔径图案采用30 μm和50 μm两种线宽，如图" }, { "name": "xref", "data": { "text": "2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "(b)和" }, { "name": "xref", "data": { "text": "2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "(c)所示。用以探究像素大小一致，而总开口面积不同时所产生的热效应是否一致。以上四种像素排列均分布在边长为2000 μm的正方形内。由于光刻机和图案化掩膜版存在一定的误差，导致最终形成的图案与设计图案之间存在一定的误差，50 μm和500 μm的孔径均形成良好的正方形图案，6 μm孔径的图案则最终形成直径为6 μm左右的圆形。因此本文通过显微镜测量确认最终形成图案尺寸，具体像素尺寸和线宽数据如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示，无图案化的器件则是边长为2000 μm的正方形。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同图案化基板的显微镜照片，像素与线宽分别为（a）6 μm/4 μm，（b）50 μm/30 μm，（c）50 μm/50 μm和（d）500 μm/500 μm" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Photomicrograph of different patterned substrates， pixel and line width are （a）6 μm/4 μm， （b）50 μm/30 μm， （c）50 μm/50 μm and （d）500 μm/500 μm， respectively" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544727&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544729&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544728&type=", "width": 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"border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "线宽（" }, { "name": "styleText", "data": { "data": [ { "name": "text", "data": "μm" } ], "style": "color:#323435;" } }, { "name": "text", "data": "）" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "a" } ] }, { "align": "center", "data": [ { "name": "text", "data": "6×6" } ] }, { "align": "center", "data": [ { "name": "text", "data": "40000" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "b" } ] }, { "align": "center", "data": [ { "name": "text", "data": "50×50" } ] }, { "align": "center", "data": [ { "name": "text", "data": "624" } ] }, { "align": "center", "data": [ { "name": "text", "data": "30" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "c" } ] }, { "align": "center", "data": [ { "name": "text", "data": "50×50" } ] }, { "align": "center", "data": [ { "name": "text", "data": "400" } ] }, { "align": "center", "data": [ { "name": "text", "data": "50" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "d" } ] }, { "align": "center", "data": [ { "name": "text", "data": "500×500" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4" } ] }, { "align": "center", "data": [ { "name": "text", "data": "500" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "e" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "2000×2000" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "1" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "无" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544731&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544730&type=", "width": "77.69583130", "height": "29.31317139", "fontsize": "" } } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　PtOEP分子温度探针原理" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "(a)为298.15 K-353.15 K不同温度下PtOEP器件的归一化电致发光(EL)光谱，电流密度为1 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，采用基板为无图案化基板。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "(a)表明，PtOEP的主发射峰位于650 nm处。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "(b)为" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "(a)中400 nm-600 nm范围内放大后的图谱，表明543 nm处存在一个微弱的发射峰，且随温度升高归一化峰值升高，与之前的研究结果一致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R14", "R15", "R16", "R17" ], "text": "14-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "(a)所示，543 nm发射来源于高温活化能为0.42 eV的第一激发三线态发射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，由热激活产生，与温度密切相关，被称为热带发射。因此本文通过其峰值与温度之间的变化关系来预测图案化器件工作中产生的热效应，由于低电流密度下热效应可忽略不计，因此本文选用在1 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电流密度下，通过无图案化器件不同温度的EL光谱确认不同温度所对应543 nm的峰值，进而以此基准预测图案化器件中的热效应。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）无图案化器件在1 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电流密度下的归一化电致发光光谱；（b）图（a）中400 nm-600 nm范围内的放大图；（c）543 nm处归一化峰值随温度变化的拟合曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "（a） Normalized EL spectra of unpatterned devices at a current density of 1 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "； （b） The magnification of the 400 nm-600 nm range in figure （a）； （c） Fitting curve of normalized 543 nm EL peak intensity plotted against temperature" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544732&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544734&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544733&type=", "width": "77.69583130", "height": "157.32588196", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "(c)所示为归一化后543 nm处EL峰值随温度的变化趋势，可将其根据变化趋势拟合为函数" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544736&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544735&type=", "width": "39.45466614", "height": "2.96333337", "fontsize": "" } } } ] }, { "name": "text", "data": "，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "Y" } ] }, { "name": "text", "data": "为归一化之后543 nm处的EL峰值，" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "为温度。拟合函数的拟合优度R" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "为0.9989，残差均方为1.37×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-8" } ] }, { "name": "text", "data": "，因此所拟合函数的拟合优度较高。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "(c)中红色实线为拟合曲线，后续可根据此函数来确定不同峰值所对应的温度。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　室温下不同图案化OLED热效应分析" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "不同图案化器件室温测得EL光谱如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "(a)所示，器件A、B、C、D、E分别对应基板a、b、c、d、e。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "(b)为" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "(a)中400 nm-600 nm范围内放大后的图谱。543 nm处的峰值高度与像素点大小呈正相关，说明像素点越大，器件所产生的热效应越显著。器件B和器件C像素点大小相同，线宽与总开口面积不同，但器件B和器件C在543 nm处的峰值一致，表明线宽和总开口面积对热效应无显著影响。这是由于像素尺寸相同时，器件与周围介质的接触面积相同，其热传导效应一致，因此线宽与总开口面积对器件热效应无显著影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。器件D和器件E在543 nm处峰值趋于一致，此情况可能是由于辐射和对流等传热作用的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R5", "R6" ], "text": "5-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，使像素大小在500 μm以上器件的热效应一致。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）室温下器件在10 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电流密度下的归一化电致发光光谱；（b）图（a）中400 nm-600 nm范围内的放大图；（c）室温下器件的外量子效率-电流密度曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "（a） Normalized EL spectra of the device at room temperature and a current density of 10 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "； （b） The magnification of the 400 nm-600 nm range in figure （a）； （c） EQE as a function of current density at room temperature" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544737&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544739&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544738&type=", "width": "67.19253540", "height": "136.22052002", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "通过" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "(c)拟合指数函数计算上述不同图案化中的热效应，可知A、B、C、D、E器件中的温度分别为303.28 K、312.15 K、311.65 K、314.57 K、314.65 K。器件A在室温下工作的温度为303.28 K，而器件E器件的温度可达314.65 K。这是由于不同大小像素点的散热效果不同导致的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而当像素大小达到500 μm以后，器件散热效果趋于一致。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "(c)为不同器件的外量子效率(EQE)曲线，由图可知，随像素点尺寸增大，器件的外量子效率呈下降趋势。这是由于器件所产生的热效应导致的，温度升高使载流子迁移速率加快，而PtOEP三线态激子寿命较长，载流子迁移速率加快导致三线态激子浓度增加，从而加剧三线态激子湮灭和三线态-极化子猝灭" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R19", "R20" ], "text": "19-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而在此过程中多余的能量将转变为热能从而进一步升高器件温度。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　不同电流密度下图案化OLED热效应分析" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "为不同电流密度下，不同像素大小器件EL光谱中543 nm处峰值变化的趋势。由" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "可知，所有器件543 nm处的峰值均随电流密度呈线性上升趋势，表明电流密度增大导致器件热效应增强；其中拥有大尺寸像素的器件上升趋势更为明显。在50 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "大电流密度注入下，器件A工作时温度达到317.25 K，而器件E工作时温度则高达339.64 K。进一步表明对于器件工作过程所产生的热效应不容忽视，尤其是在高电流密度下愈发严重" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } } ], "rid": [ "R21", "R22", "R23" ], "text": "21-23", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，采用小尺寸像素的器件拥有更好的散热效果。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "543 nm处归一化峰值随电流密度变化的拟合曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Fitting curve of normalized 543 nm EL peak intensity plotted against current density" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544740&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544742&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544741&type=", "width": "77.69583130", "height": "59.45674515", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.5　高温下不同图案化OLED热效应分析" } ], "level": "2", "id": "s3e" } }, { "name": "p", "data": [ { "name": "text", "data": "智能手机在实际应用过程中，CPU附近温度可达到323.15 K左右" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，OLED屏幕将同时受到CPU温度和自身所产生热效应的影响，为研究此情况下不同像素的散热效果，我们将不同器件加热至323.15 K并保温3分钟后，对器件进行测试。测试结果如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示，当电流密度为10 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，器件323.15 K下工作时，543 nm处的峰值更加显著。根据曲线拟合可知A-E不同像素的器件温度分别为327.42 K、335.76 K、333.98 K、336.89 K、337.18 K，由此可知不同像素器件的温度均高于323.15 K，其中器件E的温度可高达337.18 K。相同像素的器件B和器件C中的热效应仍趋于一致，与上述结果相同。进一步表明不同像素大小的散热能力有所不同。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "(c)为323.15 K下不同器件的外量子效率，呈现趋势与上述相同。相较于室温下工作，在323.15 K下工作时，器件的效率进一步下降。进一步印证器件温度过高会加剧PtOEP器件激子猝灭，对器件性能产生不利影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R24", "R25" ], "text": "24-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "（a）323.15 K下器件在10 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电流密度下的归一化电致发光光谱；（b）图（a）中400 nm-600 nm范围内的放大图；（b）323.15 K下器件的外量子效率-电流密度曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "（a） Normalized EL spectra of the device at a current density of 10 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " and 323.15 K； （b） The magnification of the 400 nm-600 nm range in figure （a）； （c） EQE as a function of current density at 323.15 K" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544743&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544745&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39544744&type=", "width": "56.01531982", "height": "114.77006531", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文通过光刻技术在ITO基板上形成不同图案化PSPI薄膜，并以此基板制备图案化OLED器件。利用PtOEP材料的热激子发射作为分子温度探针，以探究不同图案化OLED器件所产生的热效应，进一步分析热效应对器件的影响。结果表明PtOEP器件所产生的热效应随像素尺寸和电流密度增大而增加，而像素尺寸相同总发光面积不同的器件所产生的热效应趋于一致。表明像素尺寸的缩小有利于器件散热。通过拟合曲线函数，可根据EL曲线中543 nm的峰值推算出器件所产生的热效应。PtOEP器件在室温下10 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电流密度工作时，像素尺寸为2000 μm的器件温度可达314.65 K，而像素尺寸为5 μm的器件温度仅为303.29 K。这是由于小尺寸像素可保持与周围介质更有效的热传递，因此散热效果较好，而大尺寸像素对流较差且缺乏横向热传输，因此大尺寸像素热效应更为显著。当OLED器件在323.15 K环境温度下工作时，温度变化趋势与上述相同，其中像素尺寸为2000 μm的器件温度最高，可达377.18 K。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "器件的外量子效率曲线表明，随着热效应的增加，器件的外量子效率呈下降趋势。这是由于器件温度升高会增加载流子迁移速率，使PtOEP三线态激子浓度过高，进而发生高浓度激子猝灭；同时PtOEP器件中激子以及极化子间的碰撞概率也随温度提升，从而加剧激子猝灭。不同像素尺寸器件的散热性能存在差异，大尺寸像素的器件散热性能较差，极易升高器件的工作温度，从而对器件性能产生不利影响。因此OLED在实际应用中需注重器件的散热性能，尤其是控制大尺寸器件中的结温，从而提升器件的可靠性，避免结温过高对器件产生不利影响。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GHOSH A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "KHAYRULLIN I" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WANG Q" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", 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