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Pt/β-Ga2O3深紫外肖特基光电二极管的界面载流子注入和自驱动特性研究
| 更新时间：2023-02-05
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Pt/β-Ga2O3深紫外肖特基光电二极管的界面载流子注入和自驱动特性研究 增强出版
- Comprehensive investigation of Pt/β-Ga2O3 deep-UV Schottky photodiode highlighting effective carriers injection and self-powered operation
- 发光学报 2023年 null卷 第null期 (2023)
- 作者机构：南京邮电大学，集成电路科学与工程学院，氧化镓半导体创新中心,江苏,南京,210023;南京邮电大学，射频集成与微组装技术国家地方联合工程实验室,江苏,南京,210023
- 作者简介：
- 基金信息：国家自然科学基金青年科学基金(62204125);国家重点研发计划(2022YFB3605404);南京邮电大学引进人才科研启动基金项目（自然科学）(XK1060921115;XK1060921002)
- DOI：10.37188/CJL.20220420 中图分类号： O484.4
-
网络出版日期：2023-02-05，
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胡继,刘增,唐为华.Pt/β-Ga2O3深紫外肖特基光电二极管的界面载流子注入和自驱动特性研究[J].发光学报,
HU Ji,LIU Zeng,TANG Wei-hua.Comprehensive investigation of Pt/β-Ga2O3 deep-UV Schottky photodiode highlighting effective carriers injection and self-powered operation[J].Chinese Journal of Luminescence,
胡继,刘增,唐为华.Pt/β-Ga2O3深紫外肖特基光电二极管的界面载流子注入和自驱动特性研究[J].发光学报, DOI：10.37188/CJL.20220420
HU Ji,LIU Zeng,TANG Wei-hua.Comprehensive investigation of Pt/β-Ga2O3 deep-UV Schottky photodiode highlighting effective carriers injection and self-powered operation[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20220420
Pt/β-Ga2O3深紫外肖特基光电二极管的界面载流子注入和自驱动特性研究 增强出版
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"data": " Jones，表明其具有优异的弱信号探测能力。同时，响应度和外量子效率整体都随着光强增大而减小，这是由于较高的光生载流子浓度提高了电子-空穴对的复合机率。在自驱动模式下，该Pt/β-Ga"
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"data": "肖特基光电二极管展现出较快的响应速度，响应度为2.69 mA/W。此外探测器在-100 V和+100 V的高压下仍然能够稳定运行，说明该探测器具有较好的耐高压稳定性。"
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"data": " thin film was grown on "
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},
{
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"data": " thin film by photolithography， lift-off， and electron beam evaporation. Pt/Au was used as the Schottky electrode， and Ti/Al/Ni/Au was used as the Ohmic electrode； in order to achieve good Ohmic contact and improve the injection efficiency of interface carriers， the corresponding annealing treatment is carried out. The relevant results show that the Pt/β-Ga"
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"data": " Schottky photodiode exhibited a fast responsivity of 2.69 mA/W. In addition， the detector can still operate stably under high voltage of -100 V and +100 V， indicating that the detector has good stability against high voltage operation."
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"data": "紫外探测器是用来实现光学成像、光纤通讯、火灾警报、时域距离测量以及环境监测等功能的重要元器件"
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"data": "。由于平流层中的臭氧与分子氧的强吸收作用，波长小于280 nm的深紫外光几乎难以到达地表，这类探测器能够遭受极少的环境干扰"
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"data": "。因此，深紫外光电探测器具有很低的噪声以及很高的灵敏度。近十余年，氧化镓(Ga"
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"data": ")作为一种宽禁带半导体，它的禁带宽度高达4.9 eV，恰能响应深紫外波段的辐射"
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"data": "7"
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},
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]
},
{
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"data": "，所以在深紫外探测领域，Ga"
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"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
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]
},
{
"name": "text",
"data": "受到了越来越广泛的关注。"
}
]
},
{
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"data": [
{
"name": "text",
"data": "就目前而言，研究人员已经从不同的角度去提升探测器的性能。其中，探测器的器件结构对光响应特性有着本质上的影响。Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "基金属-半导体-金属"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "4",
"type": "bibr",
"rid": "R4",
"data": [
{
"name": "text",
"data": "4"
}
]
}
},
{
"name": "text",
"data": ","
},
{
"name": "xref",
"data": {
"text": "8",
"type": "bibr",
"rid": "R8",
"data": [
{
"name": "text",
"data": "8"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "、光晶体管"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "9",
"type": "bibr",
"rid": "R9",
"data": [
{
"name": "text",
"data": "9"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "10",
"type": "bibr",
"rid": "R10",
"data": [
{
"name": "text",
"data": "10"
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}
}
],
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"text": "9-10",
"type": "bibr"
}
},
{
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}
]
},
{
"name": "text",
"data": "、异质结"
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"data": [
{
"name": "text",
"data": "["
},
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"data": {
"text": "11",
"type": "bibr",
"rid": "R11",
"data": [
{
"name": "text",
"data": "11"
}
]
}
},
{
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"data": "]"
}
]
},
{
"name": "text",
"data": "以及肖特基二极管"
},
{
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"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
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"data": {
"text": "12",
"type": "bibr",
"rid": "R12",
"data": [
{
"name": "text",
"data": "12"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "19",
"type": "bibr",
"rid": "R19",
"data": [
{
"name": "text",
"data": "19"
}
]
}
}
],
"rid": [
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"R13",
"R14",
"R15",
"R16",
"R17",
"R18",
"R19"
],
"text": "12-19",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "等结构的紫外探测器已经有所报道。其中，肖特基光电二极管具有非对称的界面势垒，能够在空间电荷区形成内建电场(E"
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"data": [
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}
]
},
{
"name": "text",
"data": ")来有效地分离光生电子-空穴对，这对于提升探测器的光响应以及自驱动探测的实现都是有利的。相比于具有同样效应的异质结探测器，肖特基光电二极管结构简单易制备，且同样可以获取低的暗电流("
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"data": [
{
"name": "text",
"data": "I"
}
]
},
{
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"data": [
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"name": "text",
"data": "dark"
}
]
},
{
"name": "text",
"data": ")与快速的光响应"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "20",
"type": "bibr",
"rid": "R20",
"data": [
{
"name": "text",
"data": "20"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。比如，Chen等人"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "15",
"type": "bibr",
"rid": "R15",
"data": [
{
"name": "text",
"data": "15"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "报道了Au/β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "日盲紫外探测器，其"
},
{
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"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "dark"
}
]
},
{
"name": "text",
"data": "为10 pA，响应时间为64 μs。Liu等人"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "16",
"type": "bibr",
"rid": "R16",
"data": [
{
"name": "text",
"data": "16"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "制备了Ni/β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "肖特基光电二极管，获得了144.46 A/W的高光响应度(responsivity, "
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "text",
"data": ")和7.29"
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"data": "14"
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]
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"data": " Jones的探测度(detectivity, "
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"data": [
{
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"data": "D"
}
]
},
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"name": "text",
"data": ")。新近，Ji等人"
},
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"data": [
{
"name": "text",
"data": "["
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"data": {
"text": "19",
"type": "bibr",
"rid": "R19",
"data": [
{
"name": "text",
"data": "19"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "利用非晶Ga"
},
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}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜制备的光二极管更是实现了10"
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{
"name": "sup",
"data": [
{
"name": "text",
"data": "16"
}
]
},
{
"name": "text",
"data": " Jones的超高"
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{
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"data": [
{
"name": "text",
"data": "D"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "*"
}
]
},
{
"name": "text",
"data": "，在探测超低辐照信号方面展现出了巨大的潜力。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "金属和半导体的接触是电子、光电子器件中的关键因素，它会直接影响载流子的输运特性，进而决定器件的输出性能"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "21",
"type": "bibr",
"rid": "R21",
"data": [
{
"name": "text",
"data": "21"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "22",
"type": "bibr",
"rid": "R22",
"data": [
{
"name": "text",
"data": "22"
}
]
}
}
],
"rid": [
"R21",
"R22"
],
"text": "21-22",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。一般，肖特基结的内建电场较小，载流子浓度和界面态都会对内建电场造成影响，这种影响通常可以通过退火、薄膜表面钝化、以及选取合适材料提高势肖特基势垒的方法加以改善，本实验采取拥有较高功函数的金属Pt作为肖特基接触电极，以提高肖特基势垒，从而实现良好的自驱动特性。因此，构建良好的欧姆接触降低接触电阻，提升载流子界面注入效率"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "23",
"type": "bibr",
"rid": "R23",
"data": [
{
"name": "text",
"data": "23"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "；以及通过构建良好的肖特基势垒，形成空间电荷区促使自驱动探测的实现都显得尤为重要。故而，鉴于肖特基光电二极管的优势，本文将构筑Pt/β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "肖特基光电二极管，并从界面载流子注入和自驱动运行的角度来深入分析其性能与机理。"
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]
}
]
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},
{
"name": "p",
"data": [
{
"name": "text",
"data": "利用金属有机化学气相沉积(MOCVD)方式在"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "c"
}
]
},
{
"name": "text",
"data": "面蓝宝石衬底上生长β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜，衬底温度为800 ℃，腔室气压为24.6 Torr。薄膜的晶体质量通过X射线衍射(X-ray diffraction, XRD)和紫外-可见光吸收光谱(UV-vis absorbance spectrum)验证。然后，利用所制备的Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜，借助紫外光刻、剥离和电子束蒸镀技术完成为探测器的精细加工。鉴于Pt拥有大的功函数，理论上Pt与Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "接触时会形成相对较厚的耗尽层，并且金属Pt的稳定性好，因此选择双层的Pt/Au (20 nm/60 nm)电极用作肖特基接触电极；多层的Ti/Al/Ni/Au (10 nm/5 nm/5 nm/60 nm)电极用作欧姆接触电极。为了实现良好的欧姆接触，以降低器件运行时的接触电阻，对多层欧姆电极在N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "氛围和400 ℃条件下加以快速热处理(rapid thermal processing, RTP) 60 s。此外，在沉积电极之前，对Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜表面进行了持续60 s的O"
},
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"data": [
{
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"data": "2"
}
]
},
{
"name": "text",
"data": "等离子体处理，以保证金属电极与Ga"
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"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
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"data": [
{
"name": "text",
"data": "3"
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]
},
{
"name": "text",
"data": "薄膜的良好接触。"
}
]
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"data": [
{
"name": "text",
"data": "在完成器件制备之后，要对其进行紫外光电响应性能的检验；利用Agilent B1505A半导体分析测试设备在室温空气环境中对探测器进行电流-电压("
},
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"data": [
{
"name": "text",
"data": "I-V"
}
]
},
{
"name": "text",
"data": ")特性和瞬时光响应("
},
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"name": "italic",
"data": [
{
"name": "text",
"data": "I-t"
}
]
},
{
"name": "text",
"data": ")特性的测试，时间精度为0.2 s。一只可以发射254 nm波长光的灯被用作辐照光源；通过改变探测器与光源距离调制其光强，并通过传感器与数字源表记录。"
}
]
}
]
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},
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"data": "(a)为β-Ga"
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]
},
{
"name": "text",
"data": "薄膜XRD图谱，根据JCPDS卡片(JCPDS #43-1012)可知，出现的("
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"data": "03)三个衍射峰对应β-Ga"
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"data": "2"
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]
},
{
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"data": "O"
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"data": "；其中尖锐的(0006)晶面来自所使用的蓝宝石衬底。如"
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"data": "(b)所示，其为β-Ga"
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},
{
"name": "text",
"data": "O"
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"name": "sub",
"data": [
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"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜的紫外-可见光吸收光谱，从中可以看出该薄膜在深紫外波段的吸收强度远高于可见光波段。"
},
{
"name": "xref",
"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
{
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"data": "图1"
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}
},
{
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"data": "(b)的内插图为入射光子能("
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"data": [
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"data": "hv"
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{
"name": "text",
"data": ")与("
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"data": [
{
"name": "text",
"data": "αhv"
}
]
},
{
"name": "text",
"data": ")"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "的函数关系，通过拟合这个Tauc关系曲线[("
},
{
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"data": [
{
"name": "text",
"data": "αhv"
}
]
},
{
"name": "text",
"data": ")"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "=C("
},
{
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"data": [
{
"name": "text",
"data": "hv"
}
]
},
{
"name": "text",
"data": "-E"
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"data": "g"
}
]
},
{
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"data": ")]，其中C为常数，"
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"data": "α"
}
]
},
{
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"data": "为吸收系数。可以获得β-Ga"
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{
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"data": "2"
}
]
},
{
"name": "text",
"data": "O"
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{
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"data": [
{
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"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜的光学带隙为4.79 eV。"
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"text": "图1",
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"data": "(c)为利用所生长的β-Ga"
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},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
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}
]
},
{
"name": "text",
"data": "薄膜制备的Ga"
},
{
"name": "sub",
"data": [
{
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"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "肖特基光电二极管的结构示意图。"
},
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"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
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"data": "图1"
}
]
}
},
{
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"data": "(d)为其光学显微镜示意图，金属电极制备完整且界限清晰，实际电极间距为10.03 μm，与光刻模板(10 μm间距)仅有微小的偏差。"
}
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"data": "β-Ga"
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]
},
{
"name": "text",
"data": "O"
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]
},
{
"name": "text",
"data": "薄膜的（a）X射线衍射图谱，（b）紫外-可见光吸收光谱；β-Ga"
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},
{
"name": "text",
"data": "O"
},
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"data": [
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"data": "3"
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]
},
{
"name": "text",
"data": "光电二极管的（c）结构示意图，（d）平面光学显微图"
}
]
},
{
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"label": [
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"name": "text",
"data": "Fig.1"
}
],
"title": [
{
"name": "text",
"data": "（a） The XRD pattern and （b） UV-vis absorbance spectrum of the β-Ga"
},
{
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{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
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"data": "3"
}
]
},
{
"name": "text",
"data": " thin film. （c） The schematic diagram and （d） optical image of the β-Ga"
},
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"data": [
{
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"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
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"data": [
{
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"data": "3"
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]
},
{
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"data": " Schottky photodiode"
}
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"data": "(a)所示为在暗条件和光照条件下的"
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"data": "曲线，从其内插图中可以看出这里制备的β-Ga"
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},
{
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"data": "肖特基二极管由于Pt电极与β-Ga"
},
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{
"name": "text",
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},
{
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"data": "为肖特基接触而具有一定的整流特性"
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"data": "["
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"rid": "R24",
"data": [
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"data": "24"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。并且，其开路电压为0.24 V，其开路电压由于内建电场的存在而产生。因此，此光电探测器是可以自驱动运行的。值得注意的是，光电探测器在正偏压下和负偏压下均表现出了良好的光响应特性，其在正偏压下，光电探测器工作在光电导模式，由于其外加电场与内建电场方向相反，其内建电场被削弱乃至抵消，因此光电探测器可被视为光敏电阻，其电流输运以电子隧穿形式为主导。在负偏压下，光电探测器工作在耗尽模式，电子需要一定动能才能越过界面势垒，耗尽模式下，载流子输运行为通常可以采用热电子发射理论(thermionic emission theory, TE theory)描述"
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"data": "["
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"data": {
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"rid": "R20",
"data": [
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"data": "20"
}
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}
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"data": "为肖特基势垒。在-5 V和5 V偏压下，其"
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"data": " A. 当使用波长为254 nm的紫外光辐照探测器，在光强密度为84.8 μW/cm"
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"data": "、106.8 μW/cm"
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"data": "、153.1 μW/cm"
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"data": "、232.1 μW/cm"
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"data": "的情况时，-5 V偏压驱动下光电流("
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},
{
"name": "text",
"data": "10"
},
{
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"data": [
{
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"data": "-7"
}
]
},
{
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"data": " A和-9.63"
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"data": "10"
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"data": [
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"data": "-7"
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]
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{
"name": "text",
"data": " A；5 V偏压驱动下光电流("
},
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"data": [
{
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"data": "I"
}
]
},
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"data": [
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"data": "photo"
}
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"data": ")分别为5.02"
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},
{
"name": "text",
"data": " A、6.45"
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{
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"data": " A、9.1"
},
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"data": "10"
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"data": " A、1.22"
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"data": [
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"data": "-6"
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]
},
{
"name": "text",
"data": " A和1.59"
},
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"data": "10"
},
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"data": [
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"data": "-6"
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]
},
{
"name": "text",
"data": " A。相应地，在-5 V/5 V偏压和305.1 μW/cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "光强的光照下，探测器的光/暗电流比(photo-to-dark current ratio, "
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "PDCR"
}
]
},
{
"name": "text",
"data": ")达到了3.7"
},
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"data": [
{
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"data": "3"
}
]
},
{
"name": "text",
"data": "/2.03"
},
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}
]
},
{
"name": "text",
"data": "，说明这里报道的Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "肖特基二极管光探测器具有良好的紫外光(254 nm)响应特性，Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜半导体对254 nm入射紫外光有着很好的吸收，激发了大量的电子-空穴对"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
{
"name": "text",
"data": "25"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "28",
"type": "bibr",
"rid": "R28",
"data": [
{
"name": "text",
"data": "28"
}
]
}
}
],
"rid": [
"R25",
"R26",
"R27",
"R28"
],
"text": "25-28",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "text",
"data": "和外量子效率(external quantum efficiency, EQE)常被用来描述探测器的光响应性能，一般表达为"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "29",
"type": "bibr",
"rid": "R29",
"data": [
{
"name": "text",
"data": "29"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "："
}
]
},
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"label": [
{
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"data": "（5）"
}
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"data": " "
}
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"id": "DF5"
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"data": "和"
}
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"data": [
{
"name": "text",
"data": "其中，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "P"
}
]
},
{
"name": "text",
"data": "是入射的紫外光的光强，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "S"
}
]
},
{
"name": "text",
"data": "是Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "肖特基光电二极管的有效辐照面积(1.054"
},
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"data": "10"
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"data": [
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"name": "text",
"data": "-3"
}
]
},
{
"name": "text",
"data": " cm"
},
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"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": ")，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "h"
}
]
},
{
"name": "text",
"data": "是普朗克常数，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "c"
}
]
},
{
"name": "text",
"data": "是光速，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "e"
}
]
},
{
"name": "text",
"data": "是电子电荷，"
},
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"data": "是入射光的波长。在106.8 μW/cm"
},
{
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"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "光强照射下，-5 V偏压下，"
},
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"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "text",
"data": "和EQE分别为3.4 A/W和1.66"
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{
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"data": "10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "3"
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]
},
{
"name": "text",
"data": "%；5 V偏压下，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
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{
"name": "text",
"data": "和EQE分别为5.77 A/W和2.8"
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]
},
{
"name": "text",
"data": "%。这一结果优于β‑Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "/NSTO异质结"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "30",
"type": "bibr",
"rid": "R30",
"data": [
{
"name": "text",
"data": "30"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "、Ni/β‑Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "光电二极管"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "31",
"type": "bibr",
"rid": "R31",
"data": [
{
"name": "text",
"data": "31"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "、PEDOT: PSS/β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "有机无机混杂异质结"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "32",
"type": "bibr",
"rid": "R32",
"data": [
{
"name": "text",
"data": "32"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "、CuZnS/β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "异质结"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "33",
"type": "bibr",
"rid": "R33",
"data": [
{
"name": "text",
"data": "33"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "以及表面改性的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "探测器"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "34",
"type": "bibr",
"rid": "R34",
"data": [
{
"name": "text",
"data": "34"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "的紫外探测结果。并且，无论是在正偏压还是负偏压驱动下，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "text",
"data": "和EQE都会随着电压绝对值的增大和上升，这是由于更大驱动电压使得载流子获得了更高的漂移动能，进而输出更高的"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "photo"
}
]
},
{
"name": "text",
"data": "的缘故。此外，在-5 V和5 V偏压下，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
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"data": "和EQE随入射光光强的变化规律如"
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{
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"data": "是衡量探测器探测最小辐射信号能力的物理量，它表达为"
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"data": "肖特基二极管光探测器在不同偏压和不同光强下的瞬时响应，某一强密度测试的起始以前一个光强密度辐照后为基础，整个阶段没有出线明显的持续光电导现象，光照停止后，光生电子-空穴对迅速复合，因此前一个光照强度辐照，并不会对接下来的光响应造成明显的影响，展现了良好的可重复性和稳定性。"
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]
},
{
"name": "text",
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},
{
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"data": "肖特基光电二极管：（a）暗条件及不同光强辐照下的电流-电压特性曲线，光响应度与外量子效率随（b）电压和（c）光强的变化关系；（d）不同电压及不同光强下的瞬时光响应特性曲线"
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"title": [
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"data": "（a） The current-voltage curves in the dark and under illuminations with different intensities， （b） Voltage-dependent and （c） intensity-dependent responsivity and external quantum efficiency. （d） The transient photo response at various voltages under illuminations with various intensities of Pt/β-Ga"
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"data": "(a)所示，其为0 V偏压下的瞬时紫外光响应特性，展现了稳定的光开关特性，更高的光强能够产生更大的"
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"data": "肖特基光电二极管具有一定的自驱动运行特性，即在无外加偏压的情况下也可以正常运行。"
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{
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"data": "与光强良好的线性关系。依据方程(5)-(7)，在305.1 μW/cm"
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"data": " A，自驱动的Ga"
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]
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"data": "分别为2.69 mA/W、1.316%和4.31"
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"data": " Jones。从"
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"data": "(a)可以看出其输出的电流为负值，这与"
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"data": "(d)中偏压驱动的结果不同。如"
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"data": "(a)所示，这里自驱动探测的实现得益于肖特基结界面处空间电荷区内内建电场(E"
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]
},
{
"name": "text",
"data": "的方向与外加电场的方向相反，由于内建电场的形成，在无外加偏压的情况下，光生载流子可以被内建电场迅速分开，形成光电流，随着光强的增加，更多位于价带的电子被激发至导带形成电子-空穴对，光电流随之增加，这与"
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"data": "(a)观察到的结果一致。得益于良好的光伏效应，此光电探测器展示了良好的自驱动特性。Pt的功函数("
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"data": "的电子亲和势("
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"data": "；依据肖特基-莫特(Schottky-Mott)理论，Pt与Ga"
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{
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"data": "接触的界面势垒理论上约为1.65 eV左右，相较于广泛报道的Au与β-Ga"
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{
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"data": "所形成的肖特基结，其Pt所形成的肖特基结其界面势垒由Au的1.10 eV提高至1.65 eV，更易提高自驱动性能。在紧密接触前，由于β-Ga"
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},
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]
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{
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"data": "的费米能级高于金属Pt，因此部分电子会从Ga"
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"data": "一侧流向Pt电极一侧，导致Ga"
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]
},
{
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]
},
{
"name": "text",
"data": "表面电势升高，能带向上弯曲。因此，界面处将形成空间电荷区(space charge region)，其E"
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{
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"data": "的方向为电势降低的方向，与上述所使用的外加电场方向相反。这是实现肖特基光电二极管自驱动探测的基础条件。而Ti的功函数("
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"data": "的接触势垒很小，本文制备了多层的Ti/Al/Ni/Au电极，经退火处理，能够具有很好的欧姆接触，具体如"
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"data": "(b)所示。Ti金属电极中的自由电子会注入到Ga"
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"data": "表面电势降低，能带稍微向下弯曲；得益于良好的欧姆接触，这种界面载流子注入效应(carrier rejection effect)在很大程度上也为电极收集的信号做出了贡献。如"
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{
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"data": "肖特基光电二极管的瞬时响应特性，对于响应时间一般采用一阶拟合或者二阶拟合。其二阶拟合"
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]
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}
],
"title": [
{
"name": "text",
"data": "（a） Transient photo response， （b） the light intensity-dependent photocurrent， and （c） the response time at zero bias. （d） The current-voltage curves at high voltages from -100 V to 100 V"
}
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"data": "是时间常数的上升和下降沿。Ga"
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"data": "肖特基光电二极管"
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"data": "分别为10 ms和194 ms，表明了较快的光生和复合速率。与金属-半导体-金属结构的器件相比"
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"data": [
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"data": "["
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"data": {
"text": "38",
"type": "bibr",
"rid": "R38",
"data": [
{
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"data": "38"
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"data": "，有更快的响应速度。"
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"text": "图3",
"type": "fig",
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"data": [
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"data": "(d)为从-100 V到100 V的高压测试结果，探测器仍然能够稳定运行，说明器件有良好的耐高压稳定性，这也是作为宽禁带半导体Ga"
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{
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"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
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"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "的材料优势特性之一。在100 V偏压驱动，305.1 μW/cm"
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{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "光强的照射下，"
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{
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"data": "R"
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]
},
{
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"data": "、"
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"data": [
{
"name": "text",
"data": "D"
}
]
},
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"data": [
{
"name": "text",
"data": "*"
}
]
},
{
"name": "text",
"data": "和EQE分别为215.6 A/W、1.03"
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"title": [
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"data": "Pt/β-Ga"
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{
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]
},
{
"name": "text",
"data": "肖特基光电二极管的能带结构示意图"
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"label": [
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"title": [
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"data": "The energy-band diagram of the Pt/β-Ga"
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{
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"data": " Schottky photodiode."
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"data": "本文构筑了Pt/β-Ga"
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},
{
"name": "text",
"data": "O"
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"data": "肖特基光电二极管，双层金属Pt/Au作为肖特基电极，多层金属Ti/Al/Ni/Au作为欧姆接触。结果表明该肖特基光电二极管存在一定的整流与自驱动特性，在零偏压下能够稳定运行，并且获得了很快的响应速度。在肖特基势垒作用下，其内建电场的形成有利于分离光生电子-空穴对。同时其良好的欧姆接触，降低了接触电阻，提升了载流子界面注入效率。总之，本工作所制备的Pt/β-Ga"
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{
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"data": "O"
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"data": "3"
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]
},
{
"name": "text",
"data": "肖特基光电二极管具有良好的深紫外探测以及耐高压特性，并从界面载流子输运、自驱动探测机理以及相关光响应特性的角度做了一定的分析。"
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"data": "Supported by Young Scientists Fund of the National Natural Science Foundation of China （62204125）； the National Key R&D Program of China （2022YFB3605404）； the Natural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications （XK1060921115 and XK1060921002）"
}
]
}
],
"history": {
"epub": "2023-02-05",
"opub": "2023-02-05"
}
},
"appendix": [],
"type": "research-article",
"ethics": [],
"supplementary": [],
"journalTitle": "发光学报",
"originalSource": []
}
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