基于材料调控的直接转换型铅卤钙钛矿X射线探测器研究进展

胡刚舰; 陈琦; 魏薇; 孙仔成; 姚梦楠; 沈亮

doi:10.37188/CJL.20220399

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基于材料调控的直接转换型铅卤钙钛矿X射线探测器研究进展

更新时间：2023-02-05

- 基于材料调控的直接转换型铅卤钙钛矿X射线探测器研究进展增强出版
- Research progress of direct perovskite X-ray detector based on material regulation
- 发光学报 2023年 null卷第null期 (2023)
- 作者机构：
  
  吉林大学电子科学与工程学院,吉林,长春,130015;深圳信息职业技术学院微电子学院,广东,深圳,518172
- 作者简介：
- 基金信息：
  
  国家自然科学基金面上项目(61875072)
- DOI：10.37188/CJL.20220399 中图分类号：
- 网络出版日期：2023-02-05，
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引用本文
胡刚舰,陈琦,魏薇等.基于材料调控的直接转换型铅卤钙钛矿X射线探测器研究进展[J].发光学报,

HU Gang-jian,CHEN Qi,WEI Wei,et al.Research progress of direct perovskite X-ray detector based on material regulation[J].Chinese Journal of Luminescence,
胡刚舰,陈琦,魏薇等.基于材料调控的直接转换型铅卤钙钛矿X射线探测器研究进展[J].发光学报, DOI：10.37188/CJL.20220399

HU Gang-jian,CHEN Qi,WEI Wei,et al.Research progress of direct perovskite X-ray detector based on material regulation[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20220399

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"lang": "zh", "label": "2", "text": "深圳信息职业技术学院微电子学院，广东深圳　518172", "data": [ { "name": "text", "data": "深圳信息职业技术学院微电子学院，广东深圳　518172" } ] }, { "lang": "en", "label": "2", "text": "School of Microelectronics， Shenzhen College of Information Technology， Shenzhen 518172， China", "data": [ { "name": "text", "data": "School of Microelectronics， Shenzhen College of Information Technology， Shenzhen 518172， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "X射线探测在诸如医学成像、特定晶体结构测定、射电天文学等领域有着非常重要的作用。而传统的用于X射线探测领域的材料如硅、锑化镉等有着制备工艺复杂、成本高、X射线探测灵敏度低等缺点，严重制约了X射线探测领域的发展。近年来，铅卤钙钛矿材料作为备受关注的热点材料，因其具备较大的原子序数、高的吸收系数等优点，在X射线探测领域表现出非常优异的性能。而钙钛矿材料体系是一个大家族，不同组分的钙钛矿材料各有其优缺点，即使是同一组分的钙钛矿，根据其结晶性等参数的不同，性能表现也各不相同。因此本文从钙钛矿材料调控的角度出发，综述了近些年来直接转换型钙钛矿X射线探测器取得的成就，并对未来的钙钛矿X射线探测领域的发展趋势做出了展望。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "X-ray detection plays an essential role in areas such as medical imaging， determination of specific crystal structures， and radio astronomy. However， traditional materials used in the field of X-ray detection， such as silicon and cadmium antimonide， suffer from complex fabrication processes， excessive cost and low sensitivity to X-rays， which severely limit the development of the field. As a hot topic in recent years， lead halide perovskites have shown excellent performance in the field of X-ray detection due to their large atomic numbers and elevated absorption coefficients. While the perovskite material system is a huge family， different components of perovskite materials have their advantages and disadvantages， and even the same component of perovskite material can have different properties depending on different parameters such as crystallization. In this paper， we review recent achievements in direct-conversion perovskite X-ray detectors from the perspective of perovskite material regulation and provide an outlook on future developments in perovskite X-ray detection." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "铅卤钙钛矿" } ], [ { "name": "text", "data": "材料调控" } ], [ { "name": "text", "data": "直接转换型" } ], [ { "name": "text", "data": "X射线探测" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "Perovskite" } ], [ { "name": "text", "data": "material regulation" } ], [ { "name": "text", "data": "direct type" } ], [ { "name": "text", "data": "X ray detection" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "X射线是一种高能电磁波，具有很强的穿透性，在诸多领域具有非常重要的应用。例如，在医疗领域中" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，X射线成像是医生用来检查病人身体的重要手段；在农业领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，可以用X射线计算机断层扫描技术对农业产品进行无损的质量监测。 X射线的探测方式分为两种，直接探测和间接探测。直接探测是直接将入射的X射线转换成电信号；间接探测是通过闪烁体将高能X射线转换成可见/紫外波段光，然后使用CMOS探测器等进行收集。两种探测方式相比，由于间接型X射线探测要将X射线转换成低能光子，导致了其整体的外量子效率在理论上会比直接型要低；此外，闪烁体发出的荧光是发散的，也使得间接型X射线探测器的空间分辨率较低。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "目前，市场上用于X射线直接探测的主要材料包括：硅" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

α - 硒

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488519&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488518&type=", "width": "10.41399956", "height": "3.21733332", "fontsize": "" } } } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、锑化镉" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "以及锑化镉锌" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等。但是基于这些材料制备的X射线探测器都存在着各种各样的缺点。例如，由于硅和" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

α - 硒

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488521&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488520&type=", "width": "10.41399956", "height": "3.21733332", "fontsize": "" } } } ] }, { "name": "text", "data": "材料对于X射线的阻挡能力较弱，使得它们很难应用于能量大于50keV的X射线探测领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R24", "R25" ], "text": "24-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；对于锑化镉以及锑化镉锌材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，由于材料自身的原因，制得的X射线探测器噪声电流较大，也制约着其在X射线探测领域的应用。那么，基于新型半导体材料制备低成本，高灵敏的X射线探测器，补齐传统X射线探测器的短板，是近些年来的研究热点。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "铅卤钙钛矿的一般组成结构为ABX" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，其中，A位通常为CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "(MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": ")、HN=CHNH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "(FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": ")或者是Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": ", B位通常是Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": ",X位可以是Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "、Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "以及I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "。此外，还存在一种非铅双钙钛矿，其结构通式为A" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "M" }, { "name": "sup", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "M" }, { "name": "sup", "data": [ { "name": "text", "data": "III" } ] }, { "name": "text", "data": "X" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "或者A" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " M" }, { "name": "sup", "data": [ { "name": "text", "data": "IV" } ] }, { "name": "text", "data": "X" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。相对于铅卤钙钛矿，非铅钙钛矿由于不含铅元素，对环境的影响更小，稳定性也更好，可以作为含有毒性的铅卤钙钛矿的替代品。但是非铅钙钛矿制备的器件性能目前仍然无法媲美铅卤钙钛矿（如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示），因此本文主要综述铅卤钙钛矿的研究进展，下文中提到的钙钛矿若无特殊说明都是指铅卤钙钛矿。得益于钙钛矿材料具有较低的陷阱密度、较长的载流子扩散长度、较高的光致发光量子产率以及相对简单的制备方法等优势，钙钛矿材料在太阳能电池，发光二级管，激光器以及光电探测器等领域得到了广泛的研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } } ], "rid": [ "R27", "R28", "R29", "R30", "R31" ], "text": "27-31", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在X射线探测领域，由于钙钛矿具有较高的载流子迁移率寿命积，大的辐射吸收系数，钙钛矿X射线探测器在最近十年也得到了广泛关注，基于钙钛矿材料的X射线探测器取得了很大的进展" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。对于相同组分的钙钛矿而言，对于多晶钙钛矿而言，薄膜的厚度以及钙钛矿本身的结晶性都对制备的钙钛矿X射线探测器性能有着重要的影响，而单晶钙钛矿相对于多晶钙钛矿而言具有更好的结晶性以及更大的厚度，在制备高性能的钙钛矿方面具有较大优势；在结晶性和厚度等参数都相同的情况下，不同组分的钙钛矿制备成的X射线探测器在性能、稳定性等参数上也各有千秋。高性能钙钛矿X射线探测器的制备很大程度上受制于材料的调控方式，因此本文从材料调控的角度综述了不同的材料调控手段对于制备的直接型X射线探测器性能的影响，系统总结了目前基于钙钛矿材料的直接型X射线探测器存在的优缺点，并展望了其未来的发展趋势。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "钙钛矿直接型X射线探测器参数对比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Parameter comparison of perovskite direct X-ray detector" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "材料" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "厚度/" } ] }, { "name": "p", "data": [ { "name": "text", "data": 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4.6 \times 10^{- 5}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488577&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488576&type=", "width": "12.44600010", "height": "2.28600001", "fontsize": "" } } } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "9.3" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "563" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488579&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488578&type=", "width": "162.79997253", "height": "67.72228241", "fontsize": "" } } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　性能表征参数" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "灵敏度是X射线探测器的一个重要参数，它代表了探测器对一定剂量辐射的响应能力。X射线探测器的灵敏度S可以用如下公式进行定义：" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "name": "p", "data": [ { "name": "text", "data": "S=" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

\frac{Q}{X A}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488581&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488580&type=", "width": "5.07999992", "height": "7.28133297", "fontsize": "" } } } ] } ] }, { "name": "p", "data": [ { "name": "text", "data": "Q:探测器收集的电荷；X：单位面积辐射剂量；A：被辐射区域的面积。灵敏度S这个参数的定义中包含了X射线的吸收、光生载流子的产生以及载流子的运输和收集等过程，是评价X射线探测器性能的一个重要参数。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "另一个表征X射线探测器的重要参数是暗电流，即器件在没有辐射照射的状态下电流值的大小。对于一个X射线探测器而言，暗电流过大意味着器件噪声电流比较大，它影响着器件的最低检测剂量、信噪比以及线性响应范围等参数，因此，对于一个理想的X射线探测器而言，我们期望它的暗电流越低越好。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "由于高剂量X射线辐射会增加被照射人患癌症的风险，所以一个灵敏的X射线探测器应该具有在低剂量X射线照射下成像的能力。检测极限被用来表征X射线探测器能够清楚辨认的最低X射线剂量。检测极限在数值上等价于探测器产生三倍于自身噪声信号强度所需的X射线剂量。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "响应时间是用来表征器件对于信号响应速度的一个参数。对于某些特殊领域，探测器的响应时间是一个重要的参数。例如医药成像领域，需要尽可能减少患者暴露在X射线下的时间。因此，它对X射线探测器的响应时间有着具体要求。一般而言，响应时间对应着开启/关闭辐射后，器件的信号值从最大值的90%到最大值的10%这一过程所需要的时间，而器件在辐射开启时光电信号的上升时间一般是小于信号的下降时间。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "实际的X射线成像中，成像的清晰度也就是X射线探测器的分辨率也是一个很重要的参数，通常使用调制传递函数（MTF）来表征制备X射线探测器成像的分辨率的大小，该参数被定义为输出与输入的对比度与空间频率的关系。而且探测器成像的分辨率越高，其在X射线成像领域的应用潜力就越大。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　直接型钙钛矿X射线探测器" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "2015年，Wolfgang Heiss等人使用钙钛矿作为吸收层制备了光伏和光电导型X射线探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其中光伏型器件的X射线灵敏度达到25 μC mGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": ",能够与当时相对成熟的商用X射线探测器媲美，而使用较厚薄膜（" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

60 μ m

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488588&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488587&type=", "width": "8.89000034", "height": "3.38666677", "fontsize": "" } } } ] }, { "name": "text", "data": "）制备的光导型器件在X射线的照射下，光电流密度比制备的光伏型器件高出两个数量级,电流特性的显著改善主要得益于钙钛矿薄膜厚度的增加。Wolfgang Heiss等人使用低温溶液法制备的钙钛矿X射线探测器首次证明了钙钛矿材料在X射线探测领域内的应用潜力。如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）是光伏器件的结构。从" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）可以计算出该器件的能量转换效率是10.4%。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（c）的曲线证明了制备的钙钛矿光伏器件对X射线（光子能量75KeVp,平均能量约为37KeV）有着较为灵敏地响应。从" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（d）的数据可以计算出器件对于X射线的灵敏度为25μC mGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "，相比而言，非晶硒的灵敏度范围则在1-17μC mGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " " }, { "name": "sup", "data": [ { "name": "text", "data": " " } ] }, { "name": "text", "data": "之间" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "][" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些结果证明了MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "材料在直接型X射线探测领域内的应用潜力。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a）基于MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的p-i-n型光伏器件结构图；（b）在暗态与太阳光照射下器件的J-V曲线；（c）X光照射下器件的短路电流随着时间的变化曲线；（b）与（c）中MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "中薄膜的厚度为260 ± 60 nm；（d）X射线照射下的平均短路电流随X射线辐射剂量变化的曲线，右侧插图是厚度分别为260 ± 60 nm、360 ± 80 nm以及600 ± 120 nm薄膜对X射线灵敏度关于其体积的归一化数据。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "（a）Schematic of layer stacking of the MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-based p–i–n photodiode. （b）J–V characteristics of the device in darkness and under AM1.5 illumination. （c）Time-resolved short-circuit photocurrent under X-ray exposure. The data shown in b and c are for a MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " layer with thickness of 260 ± 60 nm. （d）Averaged short-circuit X-ray photocurrent as function of dose rate. Inset： Sensitivity normalized to the active volume for MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " layers with thicknesses of 260 ± 60 nm， 360 ± 80 nm and 600 ± 120 nm， respectively." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488584&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488586&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488585&type=", "width": "146.50900269", "height": "102.34100342", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "Wolfgang Heiss等人的工作证明了MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿材料在X射线探测领域具有应用潜力，用其制备的器件在灵敏度上能够与非晶硒X射线探测器媲美。但是，文中使用较厚薄膜（" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

60 μ m

μ C G y_{a i r}^{- 1} c m^{- 2}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488590&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488589&type=", "width": "17.86466599", "height": "4.82600021", "fontsize": "" } } } ] }, { "name": "text", "data": "的大面积X射线平板探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。器件结构如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）所示，其中通过旋涂方法制备的PI-MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "与PI-MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "分别作为空穴阻挡层以及空穴传输层，同时它们还有着降低器件暗电流的作用。而中间830微米厚的MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "则是通过刮涂的方法在PI-MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "上制备的，顶部的ITO不仅作为X射线的入射面，还作为器件的阳极加正向偏压使器件工作在收集空穴的模式下，底部的TFT阵列作为电极收集X射线产生的空穴的同时也作为一个个像素点实现X射线成像。从" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（c）中得到的数据可以看出器件不同像素点对X射线的响应率在0.3-3.8" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ C m G y_{a i r}^{- 1} c m^{- 2}

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1.0 \times 10^{- 4}

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m^{2} V^{- 1}

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α

μ m

K V_{p}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488606&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488605&type=", "width": "5.24933338", "height": "3.21733332", "fontsize": "" } } } ] }, { "name": "text", "data": "条件下制备的X射线探测器电荷收集和灵敏度特性，插图里的曲线表达的是电子空穴产生能" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

W_{\pm}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488604&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488603&type=", "width": "3.80999994", "height": "3.21733332", "fontsize": "" } } } ] }, { "name": "text", "data": "（蓝色代表像素点，红色代表二极管）与偏压的关系；图（d）是使用制备的X射线平板探测器对人手进行X射线的成像图（100" }, { "name": "italic", "data": [ { "name": "text", "data": " " } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

K V_{p}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488606&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488605&type=", "width": "5.24933338", "height": "3.21733332", "fontsize": "" } } } ] }, { "name": "text", "data": "，5" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ G y_{a i r} s^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488608&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488607&type=", "width": "11.59933376", "height": "4.14866638", "fontsize": "" } } } ] }, { "name": "text", "data": "曝光5ms，产生的剂量为25" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ G y_{a i r}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488610&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488609&type=", "width": "8.29733276", "height": "3.89466691", "fontsize": "" } } } ] }, { "name": "text", "data": "，偏压为50V）。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "（a）Illustration of an all-solution-processed digital X-ray detector. （b）The left panel shows an optical image of spin-cast PI-MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " on an " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

α

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488612&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488611&type=", "width": "1.86266661", "height": "2.28600001", "fontsize": "" } } } ] }, { "name": "text", "data": "-Si：H TFT backplane. The inset shows a single-pixel structure of TFT （scale bar 30 μm） in which the collection electrode （white outline） is connected to the drain contact of the TFT through a via （circular pad）. The right panel shows a photograph of printed MPCs on the PI-MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ". （c）Charge collection and sensitivity characteristics of the MPC detector measured at 100 KVp. The inset shows W" }, { "name": "sub", "data": [ { "name": "text", "data": "±" } ] }, { "name": "text", "data": " in the pixellated （blue symbols） and diode （red symbols） detectors.（d）A hand phantom X-ray image obtained from an MPC detector （using 100 kV" }, { "name": "sub", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": " and 5 " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ G y_{a i r} s^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488614&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488613&type=", "width": "10.92199993", "height": "4.14866638", "fontsize": "" } } } ] }, { "name": "text", "data": " for 5 ms exposure， resulting in a dose of 25 " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ G y_{a i r}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488616&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488615&type=", "width": "7.61999989", "height": "3.89466691", "fontsize": "" } } } ] }, { "name": "text", "data": " and a bias voltage of 50 V）." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488617&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488619&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488618&type=", "width": "146.50900269", "height": "91.42199707", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "这项工作首次将钙钛矿薄膜与TFT阵列相结合，制备了大面积的集成面阵列X射线探测器。对X射线进行探测的灵敏度最高可达11000" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ C G y_{a i r}^{- 1} c m^{- 2}

α

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488623&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488622&type=", "width": "2.20133328", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "text", "data": "-Se探测器的空间分辨率为7.1 lp mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "@MTF=20%。造成该现象的原因可以归纳为钙钛矿薄膜的晶粒尺寸在20-100" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ m

1.0 \times 10^{- 4}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488627&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488626&type=", "width": "16.00200081", "height": "2.96333337", "fontsize": "" } } } ] }, { "name": "text", "data": "c" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

m^{2} V^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488635&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488634&type=", "width": "8.63599968", "height": "2.96333337", "fontsize": "" } } } ] }, { "name": "text", "data": "，比目前性能较优异的X射线探测材料CdZnTe低了两个数量级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；即使文中作者通过器件结构的修饰降低了器件的暗电流，其相对而言它仍然处在一个很高的水平，这很大程度上限制了器件所能探测到的最低检测下限。除此之外，该工作虽然通过刮涂的方式实现了较厚的钙钛矿薄膜（830" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ m

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488680&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488679&type=", "width": "5.16466665", "height": "3.38666677", "fontsize": "" } } } ] }, { "name": "text", "data": "），但是在薄膜厚度方面仍较大的提升空间。据估算" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，为了将50KeV的X射线光子衰减98%,MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和Si材料需要的厚度为1mm、2mm和72mm。而通过溶液法生长的钙钛矿单晶由于没有晶界，且具有较高的μτ，较大的厚度从而展现更大的潜力来制备性能优异的钙钛矿单晶探测器。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2016年魏浩桐等人首次使用了MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单晶作为吸收层来制备高性能的X射线探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。他们通过反溶剂法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "生长出了高质量MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单晶，并通过紫外-臭氧处理进一步降低了单晶表面的缺陷，最终得到了厚度在2-3mm，μτ值高达" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

1.2 \times 10^{- 2}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488633&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488632&type=", "width": "16.00200081", "height": "2.96333337", "fontsize": "" } } } ] }, { "name": "text", "data": "c" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

m^{2} V^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488635&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488634&type=", "width": "8.63599968", "height": "2.96333337", "fontsize": "" } } } ] }, { "name": "text", "data": "的钙钛矿单晶。用该单晶制备的X射线探测器最低可探测的X射线剂量为0.5μGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": "s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，比常规医学诊断所需要的X射线剂量率（5.5μGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": "s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "）低上10倍。器件对X射线的灵敏度高达80" }, { "name": "italic", "data": [ { "name": "text", "data": " " } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ C G y_{a i r}^{- 1} c m^{- 2}

α - S e

μ C G y_{a i r}^{- 1} c m^{- 2}

μ s

μ s

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488645&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488644&type=", "width": "3.89466691", "height": "3.38666677", "fontsize": "" } } } ] }, { "name": "text", "data": "，作者认为这是由于X射线在晶体内部产生了载流子使得载流子移动的距离小于单晶的长度。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）CdTe， MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， MAPbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " 和硅对50KeV的X射线光子的衰减效率（根据光电效应）随着厚度的变化；（b）打开和关闭X射线源时MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单晶器件响应的变化曲线；（c）在不同X射线剂量率下器件产生的光电流，一直到最低可检测的剂量率。根据拟合直线的斜率，器件的灵敏度可达80μC mGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "；（d）归一化的响应与X射线频率之间的函数关系，表明器件的3dB截止频率为480Hz。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "（a） Attenuation efficiency of CdTe， MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， MAPbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " and silicon to 50 keV X-ray photons （in terms of the photoelectric effect） versus thickness. （b）MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " single-crystal device response to X-rays by turning the X-ray source on and off. （c）X-ray-generated photocurrent at various dose rates， down to the lowest detectable dose rate. A sensitivity of 80 μC Gy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "–2" } ] }, { "name": "text", "data": " is derived from the slope of the fitting line. （d）Normalized response as a function of input X-ray frequency showing that the 3 dB cutoff frequency is 480 Hz." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488646&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488648&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488647&type=", "width": "121.05599976", "height": "107.80899811", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "虽然魏浩桐等人的工作证明了MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "在X射线探测上的优异性能，但是目前市场上主流的X射线探测器仍然以无定形的" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

α - S e

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α - S e

2.1 \times 10^{4} μ C G y_{a i r}^{- 1} c m^{- 2}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488656&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488655&type=", "width": "33.52799988", "height": "4.82600021", "fontsize": "" } } } ] }, { "name": "text", "data": "的灵敏度，比非晶硒X射线探测器的灵敏度高出1000多倍。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）,得益于硅集成X射线探测器具有着较低的噪声电流，使得在0.036" }, { "name": "italic", "data": [ { "name": "text", "data": " " } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ G y_{a i r} s^{- 1}

μ G y_{a i r} s^{- 1}

μ m

m m^{2}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488664&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488663&type=", "width": "6.43466663", "height": "2.87866688", "fontsize": "" } } } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（c）所示，将10片150" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ m

μ m

μ m

100 μ m \times 250 μ m

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488672&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488671&type=", "width": "25.90800095", "height": "3.38666677", "fontsize": "" } } } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（d）所示，可以看出成的X射线图有着非常明显的光暗条纹，证明了制备的器件能够分辨80" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ m

μ m

μ m

μ m

n G y_{a i r} s^{- 1}

μ m

μ m

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488686&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488685&type=", "width": "4.40266657", "height": "2.87866688", "fontsize": "" } } } ] }, { "name": "text", "data": "，（c）、（e）、（f）、（g）、（i）中的比例尺为5mm。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "（a）X-ray-generated photocurrent versus dose rate. （b）X-ray-induced current density of a 150-μm-thin crystal device under different X-ray intensities. This device was used for the X-ray imaging in c–g. （c）Optical （top） and X-ray （bottom） images of stacked glass coverslips. （d）Optical image （top） of a stainless-steel plate with etched-through lines and its X-ray image with current profile （bottom）. （e）Optical and X-ray images of an encapsulated metallic spring. （f）Optical image of a portion of a fish caudal fin （top） and X-ray image of a section of it （bottom）. （g）Photo （top） and X-ray image （bottom） of an ‘N’ copper logo under a dose rate of 247 nGy" }, { "name": "sub", "data": [ { "name": "text", "data": "air" } ] }, { "name": "text", "data": " s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ". （h）Schematic illustration of X-ray imaging with Si-integrated MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " single crystal detectors. （i）X-ray image of the N-shaped logo obtained by the linear detector array. Scale bars： 200 μm （d） and 5mm （c，e，f，g，i）." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488687&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488689&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488688&type=", "width": "139.83358765", "height": "142.00840759", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "这项工作在低温条件下使用溶液处理的分子键合方法将钙钛矿晶体与硅衬底结合，制备了性能优异的集成硅X射线线阵探测器，其成像所需的剂量比商用探测器降低了90%，灵敏度也比当时最先进的" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

α - S e

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488691&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488690&type=", "width": "10.32933331", "height": "2.70933342", "fontsize": "" } } } ] }, { "name": "text", "data": " X射线探测器高出三个数量级，为钙钛矿单晶X射线探测器在医疗领域的商用化铺平了道路。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "以上几项工作向我们揭示了钙钛矿薄膜厚度、结晶性以及界面调控对于制备X射线探测器的影响。对于基于钙钛矿薄膜的X射线直接型探测器而言，更厚的薄膜有更有效的X射线吸收；更好的结晶性能制备出分辨率更高、检测下限更低的X射线探测器。对于单晶而言，由于缺陷的减少导致单晶的μτ值远大于多晶薄膜，在X射线探测领域的潜力也比多晶薄膜高，但是单晶表面处的大量缺陷也是制约探测器性能的一个重要因素，同时在与TFT阵列大面积集成方面，可以刮涂制备的多晶薄膜相对更有优势。除了上述对钙钛矿材料调控的手段外，基于钙钛矿组分的调控也是研究的一个方向。上述几篇文章都是基于MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "体系的钙钛矿制备的X射线探测器，虽然基于MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "体系的钙钛矿在X射线领域取得了巨大的成就，但是MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "体系的钙钛矿仍然存在着稳定性较差的缺陷，制约了MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "体系钙钛矿单晶探测器的长期稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } } ], "rid": [ "R20", "R21", "R22" ], "text": "20-22", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了改善这一问题，通常可以使用其它的A位阳离子代替MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "达到提高器件稳定性的目的。以FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "取代MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "为例，相对较大的FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "离子取代MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "后能够形成更具对称晶体结构；FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "体系钙钛矿有着更窄的带隙，能够吸收更多的光子；FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "体系钙钛矿有着更高的分解温度，热稳定性更好" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2021年姚梦楠" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等人通过低温结晶诱导的方法生长了高质量的FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单晶，该单晶具有比较高的μτ值（" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

1.1 \times 10^{- 2}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488693&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488692&type=", "width": "16.76399994", "height": "3.04800010", "fontsize": "" } } } ] }, { "name": "text", "data": "c" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

m^{2} V^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488695&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488694&type=", "width": "9.14400005", "height": "3.04800010", "fontsize": "" } } } ] }, { "name": "text", "data": "），较低的表面复合速率s（" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

78 c m s^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488697&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488696&type=", "width": "13.20800018", "height": "3.04800010", "fontsize": "" } } } ] }, { "name": "text", "data": "）和优异的探测率（" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

3.5 \times 10^{12} c m H z^{\frac{1}{2}} W^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488699&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488698&type=", "width": "34.88266373", "height": "4.23333359", "fontsize": "" } } } ] }, { "name": "text", "data": "），而且制备的单晶即使在高达460K的高温下也能表现出很好的稳定性，展现出了良好的耐高温的特性。如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）所示 " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R18", "R19" ], "text": "18-19", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，在硬X射线范围内，FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "线性衰减系数接近CdTe材料，而且比Si材料高出一个数量级。作者为了证明FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单晶对于X射线的探测能力，使用了厚度为2.5mm的单晶探测能量为23.8KeV的X射线脉冲，计算出器件在0.5 V mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的电场下对X射线的探测率可达130" }, { "name": "italic", "data": [ { "name": "text", "data": " " } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ C G y_{a i r}^{- 1} c m^{- 2}

μ G y_{a i r} s^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488703&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488702&type=", "width": "12.61533356", "height": "4.82600021", "fontsize": "" } } } ] }, { "name": "text", "data": "。而制备的器件在多次关断和开启X射线源后漂移电流仍然很低，在X射线照射下表现出很好的开关特性。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a）FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、CdTe和Si材料对于不同能量光子的吸收系数；（b）FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、CdTe和Si材料对50KeV的X射线光子的衰减能力与材料厚度之间的关系；（c）FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单晶探测器在不同剂量率X射线照射下的电流密度；（d）在不断关断开启X射线照射下器件的归一化电流。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "（a）absorption coefficients of FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， CdTe， and Si as a function of photon energy；（b） attenuation efficiencies of FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "， CdTe， and Si semiconductors to 50 keV X-ray photons versus thickness；（c） current density of FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " SC detector at different X-ray dose rates；（d） X-ray response of the FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " SC detector by turning on and off the Xray source." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488704&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488706&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488705&type=", "width": "114.61799622", "height": "89.97599792", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单晶优异的X射线探测性能可以归因于单晶优异的光电特性，如较高的μτ和较低的表面复合率，对X射线吸收系数高等因素。此外，制备的单晶表现出非常好的热稳定性，即使器件在高温下也表现出优异的性能。以上介绍的文献都是基于有机无机混合钙钛矿基础进行的研究，相对而言，全无机钙钛矿材料因具有高的载流子迁移率、更好的稳定性、更低的离子迁移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ",从而在X射线探测领域也具有举足轻重的作用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "基于Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "离子体系的钙钛矿材料也在X射线探测上取得了不错的进展" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2019年，唐江等人通过热压烧结的方式制备了较厚的准单晶CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜用于X射线探测。使用这种热压烧结的方法制备的薄膜厚度可达数百微米，这保证了对X射线的完全衰减，且制备薄膜具有良好的取向性，使其载流子输运能够接近单晶的水平。得益于制备的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜比较高的μτ值" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

(1.32 \times 10^{- 2} c m^{2} V^{- 1})

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488708&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488707&type=", "width": "31.91933441", "height": "3.72533321", "fontsize": "" } } } ] }, { "name": "text", "data": "，优异的载流子迁移率以及存在着光电导增益机制，这些促使器件对X射线的灵敏度高达" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

55684 μ C G y_{a i r}^{- 1} c m^{- 2}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488710&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488709&type=", "width": "27.09333420", "height": "4.82600021", "fontsize": "" } } } ] }, { "name": "text", "data": "；除此之外制备的X射线探测器还表现出较快的响应速度、较低的基线漂移电流以及很好的稳定性。如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（a）,得益于更高的密度（CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "：4.55 g cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "；MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "：3.45 g cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "；MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "：3.95g cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "）以及更大的平均原子序数（CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "：62.2；MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "：45.1；MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "：49.1），使得CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜在1-100KeV的范围内相对于MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "而言有着更高的衰减系数。如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（c）所示,器件在3.3V mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "、4.2V mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "、5.0V mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的外加电场下，器件的灵敏度分别为9093、23349、55684 " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

μ C G y_{a i r}^{- 1} c m^{- 2}

μ C G y_{a i r}^{- 1} c m^{- 2}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488714&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488713&type=", "width": "17.86466599", "height": "4.82600021", "fontsize": "" } } } ] }, { "name": "text", "data": "的灵敏度是当时直接与间接X射线探测器中最大的值。如此高的灵敏度主要源自于薄膜较高的μτ值以及其内部浅缺陷引起的光电导增益。为了表征制备的器件对X射线成像的对比度，作者使用了2mm厚FTO玻璃进行不断堆叠作为X射线的衰减器，记录经过不同厚度FTO玻璃后器件的电流大小。如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（e）所示数字代表堆叠FTO玻璃的数量，黑色圆圈代表平均电流。从图中清晰的阶梯状电流输出曲线可以看出成像图有着良好的对比度，而且从图中能得到FTO的衰减系数为1.44cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，与实际FTO玻璃衰减系数1.42cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "基本一致，也表明了制备的X射线探测器具有良好的线性响应范围。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "（a）不同材料对于30KeV的光子的衰减效率；（b）器件在不同剂量率X射线照射下的响应，器件的外加电场大小为4.2 V mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "；（c）在不同电场下器件光电流密度随入射X射线剂量率的变化曲线；（d）器件灵敏度与增益大小随着外加电场的变化情况；（e）探测器对堆叠FTO玻璃的响应。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "（a） The attenuation efficiency of different materials for the X-ray photon energy of 30 keV. （b） Device responses under different dose rates， while the electric field is set as 4.2 V mm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ". （c） Photocurrent–dose rate curves of the detector under different electric fields.（d） Sensitivity and gain factor as functions of the electric field. （e） Detector response toward stacked FTO glass." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488715&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488717&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488716&type=", "width": "148.30465698", "height": "79.34918213", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "唐江等人的工作证明了全无机钙钛矿材料在X射线探测领域的巨大应用潜力，其在许多方面的性能超过基于有机无机钙钛矿材料的器件。基于Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "和FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "阳离子的钙钛矿虽然有着很多优点，但是这些相对较大的阳离子的引入通常会导致晶体内部应力增加，导致晶体内部空位等缺陷出现，制约了单晶的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } } ], "rid": [ "R36", "R37", "R38", "R39" ], "text": "36-39", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些大离子半径的阳离子造成的应力失配问题可以通过调节材料组分的方式得到改善。例如，通过向钙钛矿中掺杂更小的阳离子或者阴离子来减轻单晶内部应力失配的问题。2021年刘渝城等人通过向FAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "体系中掺杂小离子半径的MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "以及Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "释放了FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "造成的晶格应力，降低了单晶内部的离子迁移，提高了器件的光响应，制备出了高性能的X射线探测器，其灵敏度可达" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

(3.5 \pm 0.2) \times 10^{6} μ C G y_{a i r}^{- 1} c m^{- 2}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488719&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488718&type=", "width": "45.63533020", "height": "3.80999994", "fontsize": "" } } } ] }, { "name": "text", "data": "。" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "除此之外，还有很多的工作研究通过调节钙钛矿组分中的B位元素来改善器件性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } } ], "rid": [ "R40", "R41", "R42", "R43" ], "text": "40-43", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，取得了一定的进展。最近，有研究者将A位阳离子的调节与B位金属离子的调节结合起来，使得两者起到协同作用，在器件性能上取得了较大的突破。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2022年，沈亮等人通过在钙钛矿结构的A位引入大尺寸阳离子来降低晶体的缺陷态密度，并对B位进行调控掺杂释放A位掺杂导致的微应变问题，最终成功制备制备了高性能的钙钛矿X射线探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "48", "type": "bibr", "rid": "R48", "data": [ { "name": "text", "data": "48" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。他们首先将GA引入稳定的Cs-FA 碘基钙钛矿中，利用GA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "与I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "之间强烈的作用力降低晶体内部的碘空位，由于GA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "过大的离子半径产生的有害拉伸应变导致了晶体通过制造铅空位来释放应变压力。为了解决这个问题，作者通过向钙钛矿的B位掺杂低浓度的Sr" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "增加形成Pb空位所需要的能量，抑制了Pb空位的形成。最终制备得到的X射线探测器在1V cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的弱电场下表现出高达" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

(2.6 \pm 0.1) \times 10^{4} μ C G y_{a i r}^{- 1} c m^{- 2}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488721&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488720&type=", "width": "45.38133240", "height": "3.80999994", "fontsize": "" } } } ] }, { "name": "text", "data": "的灵敏度，能够探测到的X射线最低检测剂量为" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

7.09 n G y_{a i r} s^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488738&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488737&type=", "width": "19.38866615", "height": "4.82600021", "fontsize": "" } } } ] }, { "name": "text", "data": "。并且器件能够维持半年以上的稳定运行状态，在高达125℃的高温下还能保持很好的稳定性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "从" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（a）中可以看出CsFAGA:Sr晶体与MAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和CdTe材料有着相似的衰减系数。从" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（b）中可以看出CsFAGA:Sr晶体的最低检测剂量率为" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

7.09 n G y_{a i r} s^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488725&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488724&type=", "width": "19.38866615", "height": "4.82600021", "fontsize": "" } } } ] }, { "name": "text", "data": "，显著低于CsFA、CsFAGA晶体的最低检测剂量率，也是文章发表时为止所有X射线探测器里面最低的数值。从" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（c）中可以看出CsFAGA:Sr器件在1 V cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "有着高达" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

2.7 \times 10^{4} μ C G y_{a i r}^{- 1} c m^{- 2}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488727&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488726&type=", "width": "32.76599884", "height": "4.82600021", "fontsize": "" } } } ] }, { "name": "text", "data": "的灵敏度，比相同电压下的CsFA、CsFAGA器件的灵敏度分别高33倍和2倍。从" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（d）中的数据可以看出制备的CsFAGA:Sr器件在低偏压下的性能可以媲美更高电压下最先进的钙钛矿X射线探测器。一直以来，稳定性也是评价X射线探测器性能的一个重要指标。如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（e）, CsFAGA:Sr探测器在1 V cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和400V cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的电场下长期运行并没有出现器件电流衰减的现象，表现出良好的运行稳定性。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "（a）不同商用半导体和钙钛矿单晶的衰减系数；（b）CsFA、CsFAGA和CsFAGA：Sr 探测器的信噪比与X射线剂量率的关系，图中误差条的大小来自于电流信号强度的变化。从图中的直线可以得出探测器的检测下限为" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

7.09 n G y_{a i r} s^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488729&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488728&type=", "width": "15.91733265", "height": "4.14866638", "fontsize": "" } } } ] }, { "name": "text", "data": "；（c）探测器在不同偏压下对X射线的灵敏度；（d）在不同偏压下比较a-Se、 CsFAMA 、 FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " 、 MA" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": " 、 Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AgBiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "、 MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3–x" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": " 和GAMAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "这些材料制备的器件对X射线的灵敏度以及最低检测下限；（e）CsFAGA：Sr探测器的运行稳定性；（f）便携式X射线监控器的原型，由一个纽扣电池提供1V cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的电场实现X射线探测；（g）X射线成像系统的示意图；（h）银行信用卡的X射线成像图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "（a） Attenuation coefficient of different commercial semiconductors and perovskite single crystals. （b） SNR dependenton the X-ray dose rate for the CsFA， CsFAGA and CsFAGA：Sr detectors， and the error bars are given according to variations in the current signal. The LoD of 7.09 " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

n G y_{a i r} s^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488731&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488730&type=", "width": "10.41399956", "height": "4.14866638", "fontsize": "" } } } ] }, { "name": "text", "data": " is derived from the fitting line with an SNR of 3. （c） Sensitivity of X-ray detectors under different electric fields. （d） Comparison of the sensitivity and LoD of representative X-ray detectors with different operating voltages： a-Se， CsFAMA ， FAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " ， MA" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": " ， Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "AgBiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "， MAPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3–x" } ] }, { "name": "text", "data": "Cl" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": " ， GAMAPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " .（e） Operational stability test of the CsFAGA：Sr detector. （f） Prototype of a portable X-ray monitor， powered by a button cell with an electric field of 1 V cm-1 for X-ray detection. （g） Schematic of the X-ray imaging system. （h） X-ray image of a bank card." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488732&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488734&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488733&type=", "width": "146.50900269", "height": "126.09999847", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（f），是作者使用CsFAGA:Sr探测器制备的低偏压手持式X射线剂量检测仪原型样机，该检测仪只需要一个纽扣电池作为电源驱动，最低可以探测到" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

n G y_{a i r} s^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488736&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488735&type=", "width": "12.02266598", "height": "4.82600021", "fontsize": "" } } } ] }, { "name": "text", "data": "级别的X射线剂量率，证明了基于CsFAGA:Sr单晶的X射线探测器在低偏压下的优异性能。作者利用" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（f）所示的成像系统对于一张信用卡进行X射线成像，结果如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（h）所示。从图中可以清楚的辨认出银行卡内的线圈部分，证明了基于CsFAGA:Sr单晶的器件在X射线成像领域有着巨大的潜力。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了更加直接的对比不同材料体系下直接型钙钛矿X射线探测器的性能，对近些年来部分探测器的性能做出了总结。如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示，选取了灵敏度、检测限、μτ积为代表的X射线探测器参数进行比较。从表中的数据可以看MA体系单晶探测器大部分都有着较高的灵敏度，而基于FA和Cs体系单晶虽然有着和MA体系单晶相媲美的μτ积，但是器件性能上仍存在不足，这可能源自于FA和Cs较大的离子半径造成的应力失配，而通过组分调节减弱了应力失配影响的CsFAGA则表现出最高的灵敏度，由此可以看出组分调节对于器件性能有着重要的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　总结与展望" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "直接转换型钙钛矿X射线探测器在近些年得到了广泛的研究，在已发表的工作中，性能优异的钙钛矿X射线探测器性能已经超过了市面上最先进的X射线探测器。例如，钙钛矿X射线探测器的检测下限可达" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

7.09 n G y_{a i r} s^{- 1}

5500 n G y_{a i r} s^{- 1}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488740&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39488739&type=", "width": "19.38866615", "height": "4.82600021", "fontsize": "" } } } ] }, { "name": "text", "data": "。" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "但是这个领域仍存在着许多未解决的问题，仍有着很大的发展潜力。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于薄膜器件而言，可以通过溶液法进行大面积制备，因此能够比较容易的与TFT技术相兼容，从而实现X射线面阵探测成像。但是钙钛矿薄膜的质量成为商用化X射线面阵成像的阻碍。旋涂、热蒸镀、刮涂等一些系列的工艺被用来制备高性能的多晶钙钛矿X射线探测器，虽然这些工艺制备的探测器取得了一定的进步，但是这些工艺也各有着其缺点。例如旋涂工艺在制备高性能钙钛矿薄膜上取得了一定的成果，但是该工艺无法制备大面积均匀的半导体薄膜，使其商业化的进程受到了限制，并且旋涂工艺在制备厚的钙钛矿薄膜时还存在着可重复性差的缺陷。而通过热蒸镀钙钛矿的方式制备钙钛矿厚膜相对于其它工艺可以更好的控制钙钛矿薄膜厚度，但是该方式制备过程周期较长，并且对蒸镀的环境非常敏感，导致了其可重复性较差。刮涂工艺在大面积的厚钙钛矿薄膜上有着较大的优势，但是该工艺制备的厚膜晶粒过大，限制了其在X射线成像上的应用。因此，仍需研究者们继续改进当下的薄膜制备工艺。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "相比较而言，钙钛矿单晶体内由于没有晶界的存在，使得其缺陷态密度远小于对应的薄膜，因此也具有更好的光电特性（较高的μτ和较低的暗电流等）与稳定性。但是钙钛矿单晶表面存在着一定的缺陷" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "R52", "data": [ { "name": "text", "data": "52" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这些缺陷主要来自于单晶界面处存在着的悬挂键和表面附近的带正电的离子空位以及带负电的卤素离子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这些缺陷的存在阻碍了钙钛矿单晶X射线探测器的发展。为了解决这一问题，目前常用的手段有表面缺陷钝化，通过调节生长动力学过程改变表面晶向等。虽然基于钙钛矿单晶制备的探测器在性能上有着非常优异的表现，但是其制备的方法决定了钙钛矿单晶比较困难与TFT技术结合制备面阵X射线探测器，目前文献中基于钙钛矿单晶探测器成像的方式主要是单像素扫描成像和线阵扫描成像" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "除了以上对于钙钛矿材料膜厚、结晶性、界面处的调控来提高器件性能之外，还可以通过调节钙钛矿组分的方式来提高器件的性能。近些年来，基于MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "的钙钛矿在太阳能电池、光电探测器等领域得到了广泛的研究也取得了很多突破性的成就，但是基于MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "的钙钛矿大部分都有着稳定性差的缺陷，严重制约了其商用价值。因此有很多工作使用FA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、Cs" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "等阳离子部分或者完全代替MA" }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "来提高器件的稳定性并保证其性能上的优势，但是这些离子半径更大的阳离子掺杂后会导致单晶内部应力的失调，导致单晶内部空位的增多，虽然提高了器件稳定性但是牺牲了性能。为了解决这一问题通常需要研究者严格控制掺杂比例。除了严格的控制掺杂比例，另一种解决大离子掺杂带来的单晶内部应力适配问题的方法是通过B位掺杂来抵消A位阳离子掺杂产生的影响。而关于B位掺杂的金属离子，需要从离子半径大小、掺杂后对于单晶缺陷形成能的影响等多个角度考虑。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "虽然钙钛矿X射线探测器在近些年来取得的进步有目共睹，但是这个领域的发展仍处于初步阶段。钙钛矿薄膜质量的改善、钙钛矿单晶与TFT工艺如何结合、多离子掺杂时相互之间的影响等问题都需要研究者们继续研究解决。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHOU S A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "BRAHME A" }, { "name": "text", "data": ". 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基于材料调控的直接转换型铅卤钙钛矿X射线探测器研究进展 增强出版

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