Vapor Deposition of All Inorganic Perovskite Transport Layer and Emission Layer to Improve the Performance of Red Perovskite Light-Emitting Diodes Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "气相沉积全无机钙钛矿传输层和发光层提高红光钙钛矿发光二极管性能" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Vapor Deposition of All Inorganic Perovskite Transport Layer and Emission Layer to Improve the Performance of Red Perovskite Light-Emitting Diodes" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "柳", "givenname": "贺夫", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "He-fu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "柳贺夫（1998- ），男，吉林榆树人，硕士研究生在读，2020年于吉林大学获得学士学位，主要从事真空蒸镀钙钛矿发光二极管的研究。E-mail：liuhf20@mails.jlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965806&type=", "small": 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"刘岳峰（1986- ），男，吉林扶余人，博士，副教授，博士生导师，2014年于吉林大学获得博士学位，主要从事有机、量子点及钙钛矿光电器件的研究。E-mail：yfliu23@jlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965809&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965811&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965810&type=", "width": "27.75677872", "height": "36.57861328", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "刘岳峰" }, { "name": "text", "data": "（1986- ），男，吉林扶余人，博士，副教授，博士生导师，2014年于吉林大学获得博士学位，主要从事有机、量子点及钙钛矿光电器件的研究。E-mail：" }, { "name": "text", "data": "yfliu23@jlu.edu.cn" } ] ] } ], "email": "yfliu23@jlu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "冯", "givenname": "晶", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "FENG", "givenname": "Jing", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "jingfeng@jlu.edu.cn", "data": [ { "name": "text", "data": "jingfeng@jlu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "冯晶（1974- ），女，辽宁新宾人，博士，教授，博士生导师，2003年于吉林大学获得博士学位，主要从事面向可穿戴电子、柔性显示和新型能源技术的光电器件研究。 E-mail：jingfeng@jlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965812&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965814&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965813&type=", "width": "27.99356079", "height": "35.99113464", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "冯晶" }, { "name": "text", "data": "（1974- ），女，辽宁新宾人，博士，教授，博士生导师，2003年于吉林大学获得博士学位，主要从事面向可穿戴电子、柔性显示和新型能源技术的光电器件研究。 E-mail：" }, { "name": "text", "data": "jingfeng@jlu.edu.cn" } ] ] } ], "email": "jingfeng@jlu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "text": "吉林大学 电子科学与工程学院， 吉林 长春　130012", "data": [ { "name": "text", "data": "吉林大学 电子科学与工程学院， 吉林 长春　130012" } ] }, { "lang": "en", "text": "College of Electronic Science and Engineering ， Jilin University ， Changchun 130012， China", "data": [ { "name": "text", "data": "College of Electronic Science and Engineering ， Jilin University ， Changchun 130012， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "在PEDOT： PSS空穴传输层上气相沉积了CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "全无机钙钛矿传输层和发光层，以PEDOT： PSS/CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为双空穴传输层，显著提高了基于CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "发光的全无机红光钙钛矿发光二极管（Perovskite light emitting diodes，PeLEDs）性能。相比基于PEDOT： PSS空穴传输层的PeLEDs器件，其亮度、电流效率和外量子效率提升幅度分别达到了44 %、157 %和180 %。器件性能提升一方面归因于PEDOT： PSS/CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "双空穴传输层的能级匹配提高了空穴传输效率，并有效抑制了PEDOT： PSS酸性导致的激子淬灭，另一方面归因于生长在CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "传输层上的CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "发光层具有更好的薄膜结晶质量。在PeLEDs中通过气相沉积生长传输层和发光层是一种简单有效的制备方案，在提高气相沉积全无机PeLEDs的性能方面有巨大潜力。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " and CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " all inorganic perovskite transport layer and emission layer were vapor deposited on the PEDOT： PSS hole transport layer. The performance of the all inorganic red light emitting diodes （PELEDs） based on CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " luminescence were significantly improved by using PEDOT： PSS/CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " as the double hole transport layers.Compared with the traditional PeLEDs using PEDOT： PSS as the hole transport layer， the enhancement ratio of luminance， current efficiency and external quantum efficiency are up to 44 %， 157 % and 180 % respectively. This obvious performance improvement is attributed to the improvement of hole injection efficiency caused by the promoted energy level alignment for the hole transport and the suppressed exciton quenching by the negative impact of PEDOT： PSS acidity. Meanwhile， the crystallization quality of the CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " emission layer grown on the CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " layer was improved. This is a simple and effective strategy to grow transport layer and emission layer in PeLEDs by vapor deposition， which has great potential in improving the performance of vacuum-evaporated all-inorganic PeLEDs." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "全无机钙钛矿发光器件" } ], [ { "name": "text", "data": "气相沉积" } ], [ { "name": "text", "data": "铯铅溴" } ], [ { "name": "text", "data": "空穴传输层" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "all-inorganic perovskite light-emitting diodes" } ], [ { "name": "text", "data": "vapor deposition" } ], [ { "name": "text", "data": "CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] } ], [ { "name": "text", "data": "hole transport layer" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "金属卤化物钙钛矿材料近年来吸引了人们极大的关注。这主要归因于其优异的光电性能，包括带隙连续可调、载流子迁移距离长、载流子注入速率平衡、量子产率高、缺陷容忍度高等特性，在光伏、照明、显示、激光、成像与探测等领域均呈现出较大的应用潜力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5", "R6", "R7" ], "text": "1-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。面向显示和照明应用，以钙钛矿材料为发光层的钙钛矿发光二极管（Perovskite light emitting diodes, PeLEDs）近年来发展迅速。自从2014年室温下PeLEDs被报道以来，短短几年时间，红光和绿光PeLEDs的外量子效率就从最初的不到0.1 %提升至现在的20 %以上" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为推动其大规模实用化，研究者们在PeLEDs性能提升方面开展了大量研究。电荷传输层在发光器件性能方面起着关键性作用。发光二极管使用的空穴传输层(hole transport layer，HTL)材料主要有以下几种：导电聚合物" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R9", "R10", "R11" ], "text": "9-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，有机小分子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和过渡金属氧化物" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而在PeLEDs中广泛使用的是适用于溶液法，制备工艺简单的聚合物聚（3,4-乙烯二氧噻吩）-聚苯乙烯磺酸（Poly（3,4-ethylenedioxythiophene）: poly（styrenesulfonate，PEDOT: PSS）。其优势在于具有良好的导电性，高透明度，但是由于和钙钛矿之间较大的空穴注入势垒，以及自身强酸性导致严重的荧光淬灭，限制了器件性能的提升" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R16", "R17" ], "text": "16-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。所以我们迫切需要寻找更合适的材料作为PeLEDs有效的空穴传输层。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿材料的可调谐带隙和高载流子迁移率表明了它们可以作为高性能的电荷传输材料。2016年，美国佛罗里达州立大学的Biwu Ma等人将CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜作为空穴传输层用于高效的有机发光二极管（Organic light-emitting devices，OLEDs），基于这种新型钙钛矿型空穴传输层的绿色磷光有机发光二极管（PHOLEDs）显示出了优于使用传统PEDOT: PSS空穴传输层器件的性能，具有更低的开启电压，以及更高的发光强度和外量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。次年，西南大学的Chun-Hong Gao等在红色PHOLEDs中引入了复合空穴传输层，其中采用旋涂法形成了无机铯铅卤化物钙钛矿CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜，采用真空蒸镀法沉积了甲基环戊烯醇酮（mCP）薄膜。使用复合HTL（CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/mCP）的PHOLEDs表现出显著的电致发光性能提升，最大亮度为20750 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，最大电流效率为10.64 cd/A，比基于传统方法的参比PHOLEDs提高了87 %" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些研究都证实了相比于传统的空穴传输层材料，钙钛矿作为传输层有着更好的能级特性与电荷传输性能，可以用来提高电荷传输平衡与辐射复合效率，并以此提升器件的光电性能。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "此外，值得注意的是，虽然旋涂法是制备钙钛矿薄膜的常见工艺，但也存在一定的局限性。例如，由于卤化铯（CsX）较低的溶解性，旋涂制备的钙钛矿薄膜表面粗糙且并不均匀。快速的溶剂蒸发和结晶过程也降低了薄膜大面积制备的可重复性。为了克服上述的问题，成熟的气相沉积法在制备钙钛矿薄膜方面引起了广泛关注。Gao等人通过真空热蒸发沉积了具有致密晶粒和完整表面覆盖的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。表明了通过真空蒸镀法不仅可以制备出具有均匀结晶和表面连续的钙钛矿薄膜，也能够精确的控制薄膜的厚度和组分，从而提高重复性和可靠性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2017年Hu等人利用溴化铯（CsBr）和溴化铅（PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）共蒸展示了第一个热蒸发的PeLED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，然而其最大EQE被限制在1.5 %。随后，Lian等人通过成分优化将EQE提高到2.5 %" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2020年，Li Song等人在CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "发光层和电子传输层间引入苯乙胺溴化物（PEABr）超薄夹层使热蒸发PeLEDs效率显著提升" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。次年Li Song等又通过使用3-氨基-1-丙醇（3AP）修饰的PEDOT: PSS和铵盐进行双边界面钝化实现了基于热蒸发CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的高效PeLEDs，其亮度为15745 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，EQE为8.86 %" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2021年Byungha Shin等人通过引入MgCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "掺杂的聚乙烯氧化物（PEO）钝化层实现了高效的真空沉积CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿发光二极管，该策略获得的器件亮度和EQE分别达到6887 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和7.6 %" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同年，Jiang Tang等通过对CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜空间约束强度的细致调控制备了高效大面积全真空沉积PeLEDs，其功能面积高达40.2 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，最大EQE为7.1 %，是目前最高效的大面积PeLEDs之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然过去几年真空沉积钙钛矿薄膜在LED方面取得了较大的进展。但是目前气相沉积PeLEDs 性能仍明显落后于溶液法制备的发光器件。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "针对上述讨论的传统聚合物空穴传输层的不足以及气相沉积法制备PeLEDs的优势，本文提出了一种气相沉积CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜制备PEDOT: PSS/CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "双传输层的方法来改善气相沉积全无机红光PeLEDs的性能。钙钛矿传输层和发光层均由气相沉积法制备，不仅可以简化制备工艺，还能够更好的控制钙钛矿薄膜的厚度和组分。之所以选用全无机钙钛矿CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为空穴传输材料，是因为其空穴迁移率大于1000 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并且最高占有轨道（highest occupied molecular orbital，HOMO）介于PEDOT: PSS和发光层CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "之间，可通过能级匹配提高空穴传输效率。同时，在PEDOT: PSS和发光层CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "之间加入CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜，既有效抑制PEDOT: PSS酸性导致的荧光猝灭，又改善了钙钛矿发光层的结晶质量。相比基于PEDOT: PSS单传输层的器件，其亮度和外量子效率（External quantum efficiency, EQE）分别提高了44 %和180 %。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　器件制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "器件的结构为ITO /PEDOT: PSS /CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（20nm）/ CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（100nm）/1,3,5-三（1-苯基-1H-苯并咪唑-2-基）苯（1,3,5-Tris（1-phenyl-1H-benzimidazol-2 -yl）benzene ,TPBi）（40nm）/氟化锂（lithium fluoride, LiF）（1nm）/铝（Al）（80nm）。制备流程如下，首先将具有ITO阳极的玻璃衬底依次用丙酮、异丙醇和去离子水进行超声清洗，再放入95 ℃的烘箱内进行烘干。然后将ITO放入等离子体清洗机中清洗5 min，以此提升衬底表面的亲水性。再使用匀胶机将PEDOT: PSS原液以4000 rpm的转速旋涂到ITO基板40 s，之后在160 ℃的温度下热退火15 min。再将样品放入多源真空热蒸发系统（Lining vacuum Tech. SD400B）在真空度达到5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa以下时沉积钙钛矿传输层CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "。钙钛矿传输层通过溴化铯（CsBr，99.9 %）和溴化铅（PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，99.99 %）双源共蒸下得到，并且CsBr和PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的蒸发速率稳定保持在0.8 Å/s，已获得二者的固定比例1:1。然后将钙钛矿发光层CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "在相同的真空室中进行蒸镀。将溴化铯（CsBr，99.9 %）和碘化铅（PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，99.99 %）的蒸发速率也同设为0.8 Å/s且比例保持在1:1进行双源共蒸。在冷却30 min后，将基板从真空室中取出并移入氮气手套箱中在热台上以100 ℃退火1 min。最后将基板移入另一个高真空室中，沉积电子传输层TPBi（40 nm, 1 Å/s），阴极修饰层LiF（1 nm, 0.1 Å/s）和阴极Al（80 nm, 1 Å/s）。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　测试设备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "使用扫描电子显微镜（scanning electron microscope，SEM，JEOL JSM-7500 F）和原子力显微镜（atomic force microscope，AFM，Dimension Icon，Bruker）表征钙钛矿薄膜的表面形态。通过X射线衍射（x-ray diffraction，XRD）表征钙钛矿薄膜的结晶质量。使用Keithley 2400数字源表和Photo Research PR655分光光度计测量PeLEDs的电流密度-电压-亮度（J-V-L）特性和电致发光（EL）光谱。使用爱丁堡FLS920 PL（photoluminescence，PL）瞬态荧光光谱仪测量时间分辨PL（time-resolved PL，TRPL）光谱。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）显示了用于沉积钙钛矿发光层和传输层的双源共蒸示意图，将CsBr和PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "共蒸发，制备出CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "空穴传输层，将CsBr和PbI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "共蒸发，制备出CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的红光发射层。优化前后的器件堆叠结构如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）所示。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（c）显示了PeLEDs器件中各功能层的能级图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，由于电子传输层（Electron transport layer, ETL）TPBi的最低未占轨道（lowest unoccupied molecular orbital，LUMO）能级，允许电子有效传输到钙钛矿发光层，而PEDOT: PSS与发光层之间存在着非常大的势垒，达0.7 eV。因此，通过提高空穴传输效率来改善电荷平衡至关重要。可以看到由于CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层的引入，其HOMO能级为5.6 eV，介于PEDOT: PSS（5.2 eV）和发光层CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（5.9 eV）之间，所以能够提供空穴传输的台阶，通过能级匹配有效提升了空穴传输效率。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1.（a）" } ], "title": [ { "name": "text", "data": "钙钛矿薄膜的双源共蒸示意图；（b）引入CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "前后PeLEDs的堆叠结构；（c）引入CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "后PeLEDs的能级示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "，" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "（a） Schematic diagram of dual-source co-evaporation of perovskite thin films； （b） Stacking structure without and with CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "； （c） Energy level of PeLEDs with CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "，" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965815&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965817&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965816&type=", "width": "104.24600220", "height": "41.18700027", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）XRD图谱显示了与CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的（100）和（200）晶面对应的14.9°和29.8°的衍射峰，在CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜上生长的CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "衍射峰强度明显增强，表明CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层的引入能够提高CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的结晶质量。这归因于相比PEDOT：PSS基底，由于存在CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "传输层，其自身的钙钛矿的晶粒相当于晶种的作用，能够诱导CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜生长，提高晶体质量从而使得XRD衍射峰增强。另一方面，对于以CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "作为晶种结晶生长的CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "迁移进入CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "晶体使其晶格尺寸和组分出现微小变化而造成XRD衍射峰位的轻微移动。另外CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的激发态寿命也从1.32 ns延长至2.61 ns（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "b），并且稳态PL强度（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "b中插图）显著增强，这都说明在PEDOT: PSS和CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "之间加入CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层能够抑制非辐射复合。已有研究表明，PEDOT: PSS的强酸性会腐蚀ITO，改变ITO的导电性和功函数，同时产生铟、锡离子扩散，到达钙钛矿发光层界面，形成非辐射缺陷态，导致荧光猝灭" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在钙钛矿发光层和PEDOT: PSS之间引入钙钛矿传输层可以起到有效的阻隔作用，从而抑制荧光猝灭。另外，CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层引入导致CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "发光光谱出现轻微的蓝移，这可能是因为CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层引入可使得CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层中的Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "离子发生离子迁移，渗透到CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "发光层中，导致光谱发生偏移，我们将在后续工作中深入细致的研究这一现象。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "有无CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " HTL的钙钛矿发光层薄膜的（a）XRD图像和（b）时间分辨PL曲线，插图是PL光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "（a） XRD images and （b） TRPL curves without and with CsPbBr3 HTL of perovskite emission layer films. Inset is PL spectra." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965818&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965820&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965819&type=", "width": "104.19300079", "height": "43.49800110", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "图" }, { "name": "xref", "data": { "text": "3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "（a）和" }, { "name": "xref", "data": { "text": "3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "（b）分别显示了在PEDOT: PSS上及PEDOT: PSS/CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "上制备的CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "发光层的表面SEM图。可以发现，在CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "上生长的CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2 " } ] }, { "name": "text", "data": "发光层薄膜晶粒更小。小尺寸晶粒由于空间限域效应有利于提升载流子密度从而提高辐射复合几率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } } ], "rid": [ "R31", "R32" ], "text": "31-32", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。晶粒尺寸减小可归因于在CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "多晶薄膜上生长CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "发光层，有助于加快其成核速率，增加了单位面积的晶粒个数而减小了晶粒尺寸。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（c）和" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（d）为PEDOT: PSS和PEDOT: PSS/CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "上制备的钙钛矿发光层表面AFM图像，可以看到钙钛矿发光层表面粗糙度没有明显的变化。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "引入CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " HTLs前（a，c）后（b，d）钙钛矿发光层的薄膜表面SEM图像和AFM图像" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "SEM images and AFM images of the thin film surface of perovskite emission layer without （a， c） and with （b， d） CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " HTLs." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965821&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965823&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965822&type=", "width": "102.92299652", "height": "68.61499786", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "最后，我们通过制备发光器件重点研究了CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "空穴传输层对钙钛矿发光二极管电致发光性能的影响。如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）所示，将PEDOT: PSS和PEDOT: PSS/CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "双空穴传输层器件的电流密度-电压特性曲线进行了比较，可以看到相同电压下，双传输层的器件具有更低的电流密度。这主要归因于引入CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层后，发光层结晶质量提升，缺陷减少使得漏电流降低。亮度、电流效率和EQE的对比曲线如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（b-d）所示，双传输层器件在给定的驱动电压下也表现出了亮度和效率的明显提升。在7 V的驱动电压下两种器件亮度达到最大值，单传输层和双传输层器件的最大亮度分别为1341 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和931 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，最大亮度提升约44 %。同时，双传输层器件的最大电流效率为0.36 cd/A，最大EQE为0.28 %，相比于PEDOT: PSS单传输层器件最大效率（0.14 cd/A）和最大EQE（0.1 %），分别提高了157 %和180 %。并且，由于CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "层的引入，更匹配的能级使得器件的启亮电压有所降低，两种器件的启亮电压分别为3.50 V和3.63 V，双传输层器件相比单传输层器件启亮电压降低了0.13 V。此外，" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（e，f）显示了两种器件在不同驱动电压下的EL光谱。随着电压的升高，两种光谱均发生了轻微红移。这是由于混合卤素钙钛矿发光器件在高电压下易发生卤素离子迁移从而引发光谱偏移的现象。最后，从" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）中插图显示的相同驱动电压下的器件EL光谱可以观察到，两种器件的峰值波长分别为648 nm和644 nm，双传输层的器件峰值波长有着轻微的蓝移，这与" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）中插图的光致PL峰蓝移现象相符。PeLEDs亮度和效率的显著提高要得益于双空穴传输层的能级匹配提升了空穴传输效率，以及CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的引入既提高了CsPbBrI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "发光层薄膜的结晶质量，同时又抑制了PEDOT: PSS酸性导致的荧光淬灭。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "有无CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " HTL钙钛矿发光器件的（a）电流密度-电压（J-V）曲线，（b）亮度-电压（L-V）曲线，（c）电流效率-电压（E-V），（d）外量子效率-电压（EQE-V）曲线和（e，f）不同驱动电压下的EL光谱。插图显示了器件的EL光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "(a) Current density-voltage (J-V) curves, (b) Luminance-voltage (L-V) curves, (c) Current efficiency-Voltage (E-V), (d) External quantum efficiency-voltage (EQE-V) curves of PeLEDs and (e, f) EL spectra under different driving voltages without and with CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " HTL. The inset show the EL spectra of the PeLEDs." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965824&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965826&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965825&type=", "width": "107.49044037", "height": "110.42994690", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文提出了气相沉积CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜制备PEDOT:PSS/CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "双空穴传输层的方案提高红光PeLEDs的性能。双空穴传输层红光PeLEDs的亮度，电流效率，EQE从PEDOT: PSS作空穴传输层器件的931 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、0.14 cd/A、0.1 %分别提高到了1341 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、0.36 cd/A、0.28 %，提升幅度达到了44 %、157 %和180 %。器件性能提升归因于双传输层提高了空穴传输以及钙钛矿发光层辐射复合几率。本文工作为提高气相沉积全无机PeLEDs的性能提供了一种有效的方案。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文（补充文件及）专家审稿意见和作者回复内容下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220" } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220" } }, { "name": "text", "data": "***（20220***为文章稿号）." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参 考 文 献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GRAETZEL M" }, { "name": "text", "data": ". 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