Colloidal quantum dot electroluminescent diodes for display applications: progress and challenges Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "面向显示应用的胶体量子点电致发光二极管：进展与挑战" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Colloidal quantum dot electroluminescent diodes for display applications: progress and challenges" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "黄", "givenname": "启章", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HUANG", "givenname": "Qi-zhang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "黄启章（1997-），男，广西百色人，硕士研究生，2020 年于吉林大学获得学士学位，主要从事量子点发光器件的研究。E-mail：huangqz20@mails.jlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965761&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965761&type=", "big": 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"deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "安其", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "An-qi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "高", "givenname": "剑峤", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "GAO", "givenname": "Jian-qiao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "朱", "givenname": "春晓", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHU", "givenname": "Chun-xiao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "陆", "givenname": "敏", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LU", "givenname": "Min", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp", "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： lumin@jlu.edu.cn； yuzhang@jlu. edu. cn", "data": [ { "name": "text", "data": "E-mail： lumin@jlu.edu.cn； yuzhang@jlu. edu. cn" } ] }, { "rid": "cor2", "lang": "en", "text": "lumin@jlu.edu.cn", "data": [ { "name": "text", "data": "lumin@jlu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "陆敏（1992-），女，内蒙古赤峰人，博士，副教授，博士生导师，2020年于吉林大学获得博士学位，主要从事纳米材料与器件的研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965762&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965764&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965763&type=", "width": "25.98142242", "height": "34.69283295", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "陆敏" }, { "name": "text", "data": "（1992-），女，内蒙古赤峰人，博士，副教授，博士生导师，2020年于吉林大学获得博士学位，主要从事纳米材料与器件的研究。" } ] ] } ], "email": "lumin@jlu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "宇", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Yu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp", "corresp", "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： lumin@jlu.edu.cn； yuzhang@jlu. edu. cn", "data": [ { "name": "text", "data": "E-mail： lumin@jlu.edu.cn； yuzhang@jlu. edu. cn" } ] }, { "rid": "cor2", "lang": "en", "text": "lumin@jlu.edu.cn", "data": [ { "name": "text", "data": "lumin@jlu.edu.cn" } ] }, { "rid": "cor3", "lang": "en", "text": "yuzhang@jlu.edu.cn", "data": [ { "name": "text", "data": "yuzhang@jlu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "张宇（1982-），男，吉林长春人，博士，教授，博士生导师，2010年于吉林大学获得博士学位，主要从事半导体纳米材料及其应用的研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965765&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965767&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965766&type=", "width": "22.90510178", "height": "33.31637573", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "张宇" }, { "name": "text", "data": "（1982-），男，吉林长春人，博士，教授，博士生导师，2010年于吉林大学获得博士学位，主要从事半导体纳米材料及其应用的研究。" } ] ] } ], "email": "yuzhang@jlu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "text": "吉林大学电子科学与工程学院 集成光电子学国家重点实验室， 吉林 长春 130012", "data": [ { "name": "text", "data": "吉林大学电子科学与工程学院 集成光电子学国家重点实验室， 吉林 长春 130012" } ] }, { "lang": "en", "text": "State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University， Changchun 130012， Jilin， China", "data": [ { "name": "text", "data": "State Key Laboratory of Integrated Optoelectronics， College of Electronic Science and Engineering， Jilin University， Changchun 130012， Jilin， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "胶体量子点（Quantum Dots，QDs）具有发光波长易调谐、窄发射、高效率等优点，且相应的量子点发光二极管（Quantum Dots Light Emitting Diodes，QLEDs）具有可溶液处理、低成本的制造工艺，有利于实现下一代广色域、高对比度、大面积和柔性显示。然而基于QLED的显示应用还存在器件性能和图案化技术等方面的挑战。随着材料和器件的优化，QLED显示的研究取得了进一步的进展。本文首先介绍了面向显示应用的QDs和QLED的发展历程，然后说明QLED在显示应用方面的挑战和研究进展，最后总结全文并展望显示领域的发展方向。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Colloidal quantum dots （QDs） have the advantages of easy tunable wavelength， narrow emission， high efficiency， and so on. Corresponding electroluminescent （EL） QD light-emitting diodes （QLED） have the advantages of solution treatment， simple and low cost manufacturing process， which is beneficial to realize the wide color gamut， high contrast， large area and flexible display. However， there are still challenges in device performance and patterning technology for QLED-based display applications. With the progress of material and device engineering， the research of QLED display has made further progress. This paper first introduces the development of QDs and QLED in display application， then indicates the challenge and research progress of QLED in display application." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "胶体量子点" } ], [ { "name": "text", "data": "电致发光二极管" } ], [ { "name": "text", "data": "显示技术" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "colloidal quantum dots" } ], [ { "name": "text", "data": "electroluminescent diodes" } ], [ { "name": "text", "data": "display technology" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "胶体量子点(Quantum Dots，QDs)因其具有发光波长易调谐、窄发射、高效率等优异的光电特性，广泛应用于显示领域。高光致发光量子产率(Photoluminescence quantum yield，PLQY)的绿光和红光QDs已经制成光转换膜应用于液晶显示(Liquid Crystal Display，LCD)。与传统荧光粉LCD(70%美国国家电视系统委员会(National Television Standards Committee，NTSC)标准色域)相比，量子点液晶显示(QD-LCD)的色域更广(大于100%NTSC)。QD-LCD使得LCD行业重获新生。目前，Nanosys、三星、TCL、京东方等多家公司的QD-LCD电视(Television，TV)相继上市。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "除了QD-LCD外，主动发光型QLED显示更具有吸引力。 这是由于自发光QLED的对比度、响应时间和视角比LCD更有优势。此外，QLED面板摒弃了LCD必不可少的背光模组，结构更简单，满足超薄和柔性显示的需求" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。与结构类似的有机发光二极管(Organic Light-Emitting Diode，OLED)显示相比，QLED 具有更宽的色域和更好的稳定性。随着功能材料和器件架构的快速发展，QLED的性能正在接近最先进的OLED。凭借在电致发光应用中的优越特性QLED 的量产和商业化成为显示行业的迫切需求。为了实现这一终极目标，人们在材料探索、器件物理和结构优化方面付出了巨大的努力。在此，本文重点介绍了 QLED 显示在蓝光器件性能、材料毒性、图案化技术所面临的挑战和取得的进展。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　材料与器件" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　显示应用的胶体量子点" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "QDs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "是由少量原子组成的准零维粒子。其尺寸通常在1-10 nm，其中的载流子运动受限于三个维度，并且其能带结构是离散的能级，即产生量子限域效应。此外，QDs还表现出许多与其体材料截然不同的物理化学性质" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如表面效应、介电限域效应、量子隧道效应和库仑阻塞效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "QDs种类繁多，包括II-VI族(CdS，CdSe和CdTe等)、III-V族(InP、InAs等)、IV族(C、Si、Ge等)、IV-VI族(PbS和PbSe等)、I-III-VI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "族(CuInS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等)和I" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-II-IV-VI" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "族(Cu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "ZnSnS" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "等) QDs、钙钛矿量子点(Perovskite quantum dots，PQDs)等，光谱覆盖范围广(紫外到红外)，被广泛应用于光电探测器、太阳能电池、发光二极管、场效应晶体管、激光器、生物成像、光催化等领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R6", "R7", "R8" ], "text": "6-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。QDs合成方法多样，可分为自顶向下和自底向上的方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R8", "R9" ], "text": "8-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。自顶向下的方法有物理粉碎法、机械铣削法、光刻法、激光烧蚀法等，自底向上的方法包括外延法和湿法化学合成等。其中自底向上的方法在量子点合成较为常见。而在自底向上的方法中，外延法需要基底和超高真空环境，杂质容忍度小。此外，由于外延QD" }, { "name": "sub", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "的横向尺寸相对较大(通常" }, { "name": "text", "data": ">" }, { "name": "text", "data": "10 nm)和尺寸控制困难，只能观察到较弱的量子限制效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。 而湿法化学合成基于相对便宜的、可扩展的溶液条件，杂质容忍度远远超过外延法，其合成的QDs具有精确的尺寸和形貌、波长可调，以及高的单分散性(尺寸变化 " }, { "name": "text", "data": "<" }, { "name": "text", "data": "4%)、光谱纯度和光致发光量子产额(PLQY)η" }, { "name": "sub", "data": [ { "name": "text", "data": "PL" } ] }, { "name": "text", "data": "，且合成的QDs是独立的，不需要外延法所需的基底，易于进行化学后处理和薄膜组装。QDs的湿法化学合成可以追溯到 1993年提出的胶体法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。胶体法已成功应用于生长II-VI" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、III-V" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、IV-VI" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和IV" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } } ], "rid": [ "R14", "R15", "R16" ], "text": "14-16", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "族半导体QDs以及PQDs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。从材料化学的角度来看，显示技术的进步需要高效、稳定、色彩纯正的QDs。如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，在可见光波段的QDs包括Cd基QDs、ZnSe QDs、InP QDs、PQDs、CuInSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2–x" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": " QDs、碳QDs(Carbon Quantum Dots，CQDots)等，其中CdSe QDs的研究较为成熟。在QDs合成的初期， CdSe QDs具有宽发射线宽和低 PLQY。这归因于QDs表面普遍存在的缺陷，这些缺陷可以充当中间态诱导激子的非辐射复合。通过宽禁带壳(如 CdS、ZnS 和 ZnSe)覆盖CdSe 核可以有效地钝化由悬空键引起的表面缺陷，从而显着提高PLQY和QDs的稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R18", "R19", "R20" ], "text": "18-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如今，与其他QDs相比，基于CdSe的核壳结构QDs具有几乎100% 的PLQY、窄发射线宽和好的稳定性，因此是可见波长 QLED 的首选材料。然而毒性较大的重金属Cd阻碍了其进一步的实际应用。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "不同QDs的发射光谱范围" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "emission spectrum range of different QDs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "］" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965768&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965770&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965769&type=", "width": "77.86686707", "height": "39.24892426", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "ZnSe QDs、InP QDs、CQDots、CuInSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2–x" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "x " } ] }, { "name": "text", "data": "QDs的离子成分无毒性，因此有利于发展绿色环保型显示技术。然而CQDots、CuInSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2– x" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "x " } ] }, { "name": "text", "data": "QDs的发光峰较宽，色域和色纯度较小，不适合显示应用。ZnSe和InP QDs因为具有发射光谱窄，稳定性高的特性，可能是Cd基QDs 的可行替代品。但由于较大的体带隙(2.7 eV)限制，ZnSe QDs的PL波长通常小于445 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这需要通过掺Te等手段将其发射波长向长波拓展，从而带来因缺陷增加引起的发光效率下降等额外问题。InP QDs则由于表面缺陷和陷阱导致的非辐射复合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } } ], "rid": [ "R22", "R23" ], "text": "22-23", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，表现出较差的光学特性，需要通过生长 ZnSe、ZnS 壳来钝化InP QDs表面悬空键从而改善其光致发光效率。但与Cd基QDs相比，由于有效钝化壳的活性前驱体和替代品的不足，改进 InP QDs的生长技术仍然是一个挑战" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "与传统Cd基量子点相比，PQDs其具有高PLQY、可通过调整卤化物成分调谐的更窄的发射峰" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，是QDs显示的下一个有利候选者。近年来，基于PQDs的LED 器件效率迅速提升，然而由于离子迁移等问题，实现稳定的PQDs材料和器件仍是一个挑战。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "综上，目前尚没有一种高效、稳定、无毒且易于合成的QDs材料可以完全满足QLED显示应用的需求，许多问题还有待解决。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　胶体量子点电致发光二极管" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "Alivisatos研究组于 1994 年首次报道了CdSe量子点发光二极管(LED)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其外量子效率(External Quantum Efficiency，EQE)不到1%，亮度为100cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，远低于 Tang 等人在1987 年报道的 OLED器件的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此后，QLED技术吸取OLED技术的相关经验并发展迅速，性能稳步提升。其中QDs材料和电荷传输层(Charge Transport Layer，CTL)的进步对QLED技术的发展起着关键作用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "和" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "总结了QLED的四种器件结构和近年来的性能进展。可以看到红、绿、蓝三种颜色QLED器件的EQE均突破20%，且红光和绿光器件的最大亮度突破350000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": " 2" } ] }, { "name": "text", "data": "，T" }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "@100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "寿命突破数百万小时，而蓝色器件在这两方面较为落后。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": 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Layer，EML)和电子传输层(Electron Transport Layer，ETL)。由于无壳层的CdSe QDs固态薄膜的导电性差、PLQY低，这些器件只能实现微弱的亮度和极低的EQE (" }, { "name": "text", "data": "<" }, { "name": "text", "data": "0.01%)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在 CdSe QDs 表面包覆CdS 壳后，QLED 的峰值 EQE 提高到 0.22%。然而EL 光谱中观察到的聚合物发光，表明 QDs 层中的激子限制较差" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2002年，Coe 等人利用有机材料作为 ETL 和空穴传输层(Hole Transport Layer，HTL)制备了II型结构 QLED，其结构类似于 OLED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，有机 CTL的应用使器件峰值 EQE提升至0.52%。激子除了由直接电荷注入形成外，还可由 Förster 共振能量转移 (Förster Resonance Energy Transfer，FRET) 产生。在这种类型的 QLED 中，由FRET产生的激子占主导" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " 。即首先在CTL 中产生的激子通过FRET过程将能量转移到QDs中再次形成激子。由于发射过程与电荷传输的解耦，此类 QLED 中可以获得 0.5~5% 的 EQE" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } } ], "rid": [ "R31", "R32", "R33", "R34" ], "text": "31-34", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但此类器件由于有机材料相对较低的电导率限制了电荷载流子的注入、单层QDs的针孔导致载流子泄漏而限制了效率的提高 。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "用无机CTL取代有机CTL形成III型结构可以提高器件在空气中的稳定性，并可以实现更高的电流密度。利用金属氧化物CTL的高导电性，Bawendi小组" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在 2008年报道了电流密度高达 4 A/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的全无机QLED，但器件EQE小于1%。导致器件效率低的主要原因是溅射过程中QDs的损伤，载流子注入不平衡(由于p型金属氧化物和QDs之间有一个大的空穴注入势垒)，以及周围导电金属氧化物对QDs 的PL猝灭" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } } ], "rid": [ "R36", "R37" ], "text": "36-37", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此类全无机器件具有较强的环境稳定性，但EQE较低，溶液处理的金属氧化物CTL的发展将有助于器件效率的提升。自21世纪10年代以来，人们开始采用具有无机ETL和有机HTL的IV型混合结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } } ], "rid": [ "R38", "R39", "R40" ], "text": "38-40", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，以实现较为平衡和高效的载流子传输，从而提升QLED器件效率。2011年，Qian等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "介绍了基于 ZnO 纳米晶 ETL 的全溶液处理QLED。由于ZnO 纳米晶具有高电子迁移率和适合的能带结构，所制备的器件实现了高效的电子注入和俄歇上转换导致的低开启电压，红光和绿光器件的EQE突破1%。此后ZnO纳米晶作为ETL材料被广泛应用于QLED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2013年，Benjamin等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用这种混合结构，制备了基于CdSe/CdS核壳QDs的倒置QLED，EQE 为 18%，超过了之前的记录值。此后，CTL的优化受来越多的关注，被认为是实现高效器件的可行策略" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。IV型结构中电子的注入速率显著大于空穴，导致器件载流子注入不平衡的现象加剧。这通常有两种优化手段：限制电子注入或提升空穴注入。2014年，彭笑刚团队" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在QDs和 ZnO 纳米晶之间插入聚甲基丙烯酸甲酯 (PMMA) 绝缘层，抑制了电子注入并防止了ZnO纳米晶ETL对激子的猝灭，首次实现了 EQE 超过 20% 的高效有机-无机混合结构红光 QLED。然而，这种高效器件需要精确控制绝缘层厚度小于10 nm，这给工业生产带来了很大的困难。于是2018年他们制备了以Mg掺杂ZnO纳米晶为ETL、CdZnSeS/ZnS核壳QDs为EML的无绝缘层红光QLED。相对于以ZnO纳米晶为ETL的无绝缘层器件，Mg掺杂显著抑制了QDs/ETL 界面处的激子猝灭。他们随后通过进一步调整电极厚度以平衡载流子注入，最终实现了当时红色无绝缘层器件最高的18.1%EQE。Shen等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "则采取降低空穴注入势垒的方法以提升器件效率。2019年，他们通过对QDs包覆ZnSe壳层，成功调整EML能级使其与空穴注入层(Hole Injection Layer，HIL)的能级相匹配，实现了最大EQE分别为 21.6%、22.9% 和 8.05% 和峰值亮度为356000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": " 2" } ] }, { "name": "text", "data": "、614000 cd/m " }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和 62600 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": " 2" } ] }, { "name": "text", "data": "的红色、绿色和蓝色QLED器件。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "到目前为止，为了提高 QLED 的性能，人们采用多种有效的策略，包括优化合成方法提高" } ] }, { "name": "p", "data": [ { "name": "text", "data": "QDs的光致发光量子产率(PLQY)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } } ], "rid": [ "R47", "R48", "R49", "R50" ], "text": "47-50", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，通过壳层包覆调控QDs能带结构进而改善空穴注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } } ], "rid": [ "R51", "R52", "R53" ], "text": "51-53", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ", 使用电化学稳定的配体消除原位氧化还原反应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，使用氯化物配体提高QDs层导电性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "， 优化ZnO ETL的材料实现有效的电子注入和抑制界面激子猝灭" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } } ], "rid": [ "R56", "R57" ], "text": "56-57", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些努力使红色 QLED 具有大于20% 的EQE和长使用寿命(亮度衰减到 100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "初始值的95%的时间，T" }, { "name": "sub", "data": [ { "name": "text", "data": "95" } ] }, { "name": "text", "data": "@100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": ">" }, { "name": "text", "data": "300000小时)，满足EL显示器的要求 " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，从" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "可以看出，蓝色QLED的EQE和亮度相对较低，特别是蓝色" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "48", "type": "bibr", "rid": "R48", "data": [ { "name": "text", "data": "48" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "器件的使用寿命远低于绿色和红色器件(T" }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "@100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "达数百万小时" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ")，因此需要新的策略来研制高性能的蓝色QLED。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　进展与挑战" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　Cd基量子点发光二极管" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "Cd基QDs稳定性好，量子产率高，合成工艺成熟，是实现QLED显示的最有力竞争者。从" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "可以看出Cd基QLED的性能进展。可以看出，高质量QDs的合成和器件结构的设计都取得显著进步，特别是红光和绿光器件的EQE、亮度、寿命都已接近最先进的OLED器件的性能，这为实现QLED显示提供了保障。然而在红绿蓝三基色中，蓝色QLEDs除了个别报道外，大部分器件的EQE、亮度和稳定性相对偏低，严重阻碍了QLEDs的商业化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "蓝光QLED性能不佳可归咎于以下原因：" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(1)与绿色和红色QDs相比，蓝色QDs具有更大的带隙，这会增加激子猝灭的能量损失途径" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，蓝色QDs体积相对较小，导致相对较大的比表面积和较多的表面缺陷，从而更容易产生荧光猝灭和较低的PLQY。此外，蓝色QDs在高光通量下会表现出明显的“闪烁”效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，限制了其稳定的光输出，影响了蓝色QDs的亮度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(2)蓝色QDs的固有能带结构造成了载流子注入的瓶颈" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } } ], "rid": [ "R61", "R62" ], "text": "61-62", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，应用于高性能QLED 的蓝色 QDs都是CdZnS/ZnS核/壳 QDs，其具有较厚的ZnS壳。一方面，使用宽禁带的厚ZnS壳层可以有效地限制激子波函数，抑制QDs之间的非辐射俄歇复合和FRET，从而使CdZnS/ZnS核/壳QDs具有高PLQY。另一方面，使用厚 ZnS 壳会扩大 QD 的带隙，使电荷注入变得困难，从而影响蓝色 QLED 的器件性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(3)在器件结构设计方面，蓝色QDs具有较大的带隙和较深的价带顶(Valence Band Maximum，VBM)，导致常用的HTL和蓝色QDs的界面处存在较大的空穴注入势垒。使用传统的有机 HTL 无法实现有效的空穴注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，由于使用无机电子传输层(例如ZnO)，电子可以顺利地注入EML，这导致严重的载流子注入不平衡。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "(4)从电荷传输的角度来看，ZnO纳米晶的电子迁移率(~2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/(V" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965777&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965776&type=", "width": "1.86266661", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "text", "data": "s))高于常规有机ETL" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " 。在载流子迁移率和电荷注入效率双重差异的影响下，EML中两种电荷载流子的数量是不平衡的。多余的电子使QDs带负电，导致荧光通过非辐射俄歇复合过程猝灭，这是影响QLEDs效率提高和大电流下效率滚降的主要原因" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，QLED中存在的电流会产生大量焦耳热，从而提高器件的局部温度，促进电荷跃迁到附近的表面陷阱状态，进而加剧陷阱辅助淬灭过程。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "针对蓝光QLED存在的问题，可以通过以下两个途径提升器件性能：" } ] }, { "name": "p", "data": [ { "name": "text", "data": "一是发展QDs合成技术，实现具有高PLQY和高稳定性的蓝色QDs(如厚壳核/壳QDs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "R67", "data": [ { "name": "text", "data": "67" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } } ], "rid": [ "R67", "R68" ], "text": "67-68", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、梯度合金QDs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " 和有机配体修饰的QDs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ")。2013年，Lee等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用S-OA溶液替代传统S-TOP/TBP溶液合成PLQY高达98%的高质量蓝色CdZnS/ZnS核/壳QDs。如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "(a)所示，其发光波长为452 nm，PLQY随包壳时间的延长而升高，最终达到98%。利用合成的QDs作为发光层制备了峰值亮度高达2624 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的QLED。2015年，Yang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过调整合成过程中S和Zn前驱体的比例，获得高质量的Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "1-x" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "S/ZnS合金QDs(λ" }, { "name": "sub", "data": [ { "name": "text", "data": "PL" } ] }, { "name": "text", "data": "=450 nm)。Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "1-x" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "S核具有较宽的禁带宽度，在电子波函数限制方面优于CdSe/CdS QDs。平均粒径为 8 nm 的蓝色Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "1-x" } ] }, { "name": "text", "data": "Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "S/ZnS合金QDs的 ZnS 外壳层比以前报道的要薄，可以有效抑制非辐射俄歇复合过程。用这种蓝色 QDs 构建的 QLED 的最大亮度为 4000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，最大电流效率为4.4 cd/A, 最大 EQE为 10.7%。相对于薄壳QDs，厚壳QDs具有更高的稳定性。2017 年，Shen等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过控制壳生长和减小晶格畸变，成功合成了具有93% PLQY的厚壳Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "1-x" } ] }, { "name": "text", "data": "S/ZnS核/壳 QDs，并且实现了EQE超过15%的蓝光器件，T" }, { "name": "sub", "data": [ { "name": "text", "data": "70" } ] }, { "name": "text", "data": "@420 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "寿命为47 h。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）CdZnS/ZnS QDs的吸收、发光光谱以及PLQY随着壳层生长时间的变化曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b）QLED器件的能级结构图和相应的EQE统计分布图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "（a）absorption and PL spectra of CdZnS/ZnS QDs and PLQY variation curves with shell growth time" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b） energy level structure diagram and corresponding EQE statistical distribution diagram of QLED devices " }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965778&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965780&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965779&type=", "width": "109.81999969", "height": "102.87000275", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "二是通过界面工程" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } } ], "rid": [ "R71", "R72", "R73", "R74" ], "text": "71-74", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "优化电荷注入效率和平衡。2015年，Shen等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过短链的1-辛硫醇作为表面配体，改善了QDs中的空穴注入和电荷平衡，首次实现了EQE大于10%的ZnCdS/ZnSDs蓝色QLED(如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "(b))，但器件的最大亮度为7600 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。2017年，Wang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过调整ZnO纳米晶的粒径实现了电荷平衡，相应器件的最大电流效率和 EQE 分别为14.1 cd/A和19.8%，但器件亮度和寿命较低。2019年，Shen等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用 ZnSe 作为壳层并且由于整个Zn" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "Cd" }, { "name": "sub", "data": [ { "name": "text", "data": "1– x" } ] }, { "name": "text", "data": "Se/ZnSe核/壳QDs都存在Se，形成了合金桥接层，有效降低了空穴注入势垒，实现了亮度为10100 cd cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、EQE为8.05%和寿命为7000 h T" }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "@100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " 的蓝色QLED。2022年，Wang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在PVK和ZnCdSe/ZnS QDs之间插入ZnSe/ZnS中间层，不仅抑制了 PVK 中的电子俘获，增加了QDs发光层内的激子复合概率，而且促进了空穴注入，改善了蓝色器件中的电荷平衡。最终得到的器件在2920cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "下的EQE为20.6%。同年，Deng等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过使用具有低电子亲和力和能量无序性的空穴传输聚合物聚((9,9-二辛基芴基-2,7-二基)-alt-(9-(2-乙基己基)-咔唑-3,6-二基))(PF8Cz)来消除有机/无机界面处的电子泄漏，实现了高效蓝色CdZnSe/ZnS QLED。其峰值EQE为21.9%，最大亮度为25000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，但T" }, { "name": "italic", "data": [ { "name": "text", "data": " " } ] }, { "name": "sub", "data": [ { "name": "text", "data": "95" } ] }, { "name": "text", "data": " @100cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "约为 4 400 小时(或" }, { "name": "italic", "data": [ { "name": "text", "data": "T " } ] }, { "name": "sub", "data": [ { "name": "text", "data": "95" } ] }, { "name": "text", "data": " @1000 cd m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "约为 57 小时)的器件寿命尚不能满足显示需求(T" }, { "name": "sub", "data": [ { "name": "text", "data": "95" } ] }, { "name": "text", "data": " @100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "需10000 h)。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "此外，配体的电化学性质也会影响器件性能。2020年，Pu等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研究了配体的电化学惰性对器件性能的影响。利用电化学稳定性更高的脂肪胺作为配体实现了稳定的CdSeS/ZnSeS/ZnS- RNH" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " 蓝光QLEDs，器件寿命为T" }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": " @100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ">" }, { "name": "text", "data": "10000 h。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　无Cd量子点发光二极管" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "Cd基核壳结构 QDs 在色纯度、量子效率和稳定性方面优于无毒的 InP、CuInSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2–x" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": " QDs和其他毒性较小的QDs。然而，对Pb、Cd和Hg等重金属的监管，阻碍了其进一步应用。因此，人们在研发无重金属 (Heavy Metal Free，HMF) QDs以解决Cd 基QDs的毒性问题。但是， ZnSe QDs带隙较大，发射偏紫光波段" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } } ], "rid": [ "R77", "R78" ], "text": "77-78", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而且，CuInSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2–x" } ] }, { "name": "text", "data": "S" }, { "name": "sub", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "和 IV 族QDs通常具有宽发射光谱，这使得他们不适用于显示应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。InP QDs具有覆盖可见光范围的发射波长，且发射线宽相对较窄(40-60 nm) " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } } ], "rid": [ "R80", "R81" ], "text": "80-81", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此， InP 基QLED是目前用于显示应用最有前景的无Cd QLED 替代品。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "自 2011 年首次报道 InP 基 QLED 以来" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，人们通过不断的努力合成高质量的 InP QDs和并且通过优化 QLED 器件结构，InP 基 QLED 的性能得到了极大的提升。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "材料方面，早期工作主要集中于改进合成路线以获得高量子产率的QDs溶液。一开始对 InP QDs的研究大多采用直接策略，其中 In和P前驱体在由有机溶剂和封端配体组成的溶液中加热并反应，以获得分散在溶剂中的纳米晶体，例如热注入和一锅法两种代表性方法。然而，直接合成策略中的同时成核和晶体生长导致晶粒尺寸分布不均匀" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了解决这个问题，研究人员提出了种子生长策略" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "85", "type": "bibr", "rid": "R85", "data": [ { "name": "text", "data": "85" } ] } } ], "rid": [ "R84", "R85" ], "text": "84-85", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "(如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "(a))和阳离子交换法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "R86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } } ], "rid": [ "R86", "R87", "R88" ], "text": "86-88", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "(如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "(b))。但值得注意的是，与成熟的胶体Cd基QDs相比，合成InP QDs的主流磷前驱体三(三甲基甲硅烷基)膦((SiMe)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "P)不仅价格昂贵，而且活性高，可以在空气中自燃并在高温下爆炸" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "89", "type": "bibr", "rid": "R89", "data": [ { "name": "text", "data": "89" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "90", "type": "bibr", "rid": "R90", "data": [ { "name": "text", "data": "90" } ] } } ], "rid": [ "R89", "R90" ], "text": "89-90", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因此InP QDs的格应变引起的界面缺陷。2019 年，Won等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "85", "type": "bibr", "rid": "R85", "data": [ { "name": "text", "data": "85" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在ZnSe壳层生长的早期添加 HF 溶液以防止再氧化，并将其厚度增加到3.6 nm。最后，获得了基于高质量球形InP/ZnSe/ZnS QDs的红色QLED；该器件最高亮度为100000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，最大EQE为21.4%，在100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "下工作寿命为1000000小时。2021年，Liu等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "91", "type": "bibr", "rid": "R91", "data": [ { "name": "text", "data": "91" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用(DMA)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "P作为磷前驱体合成PLQY高达95%的绿色 InP/ZnSeS/ZnS QDs并制备了EQE" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）种子生长策略" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b）阳离子交换法" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "R86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "（a）seed growth strategy" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b）cation exchange method" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "R86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965781&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965783&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965782&type=", "width": "117.23808289", "height": "83.91712189", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "超过7% 的InP QLED。同年，Chao等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "92", "type": "bibr", "rid": "R92", "data": [ { "name": "text", "data": "92" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "合成绿色InP/ZnSe/ZnS QDs，PLQY 为 86%。然后，他们用不同碳链长度的烷基二胺和卤化锌钝化InP QDs 发光层，实现了EQE高达16.3%的绿色QLED。与绿色和红色 InP QDs 相比，蓝色 InP QDs 的核心尺寸更小，这意味着会产生更多的缺陷。此外，QDs壳层难以实现可控外延生长，导致线宽较宽，PLQY较低；对高性能蓝色InP QDs的研究远远落后于红色和绿色 QLED。在InP QDs引入Ga元素形成InGaP合金QDs有望弥补InP QDs在蓝光性能上的不足。2020 年，Kim 等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "R86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用阳离子交换法(如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "(b))实现465 nm深蓝色InGaP QDs，并进行包壳处理，形成InGaP/ZnSeS/ZnS QDs。进一步用该QDs作为发光层制备QLED，器件的最大 EQE 为 2.5%，亮度为 1038 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。 结果表明，高质量的壳生长是提高InP QDs性能的有效方法。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "器件结构方面，人们通过QDs与聚合物混合EML、ETL优化、HTL优化等策略以促进载流注入平衡，降低注入势垒，从而提升InP 基 QLED 的性能。不同于CdSe QLED 中空穴注入的问题， InP QLED 的关键问题是器件中的电子过于活跃。2021年，Han等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "93", "type": "bibr", "rid": "R93", "data": [ { "name": "text", "data": "93" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将有机分子 N,N'-双(3-甲基苯基)-N,N'-双-(苯基)-9,9-二辛基芴(DOFL-TPD)与InP/ZnSe/ZnS QDs混合制成均匀薄膜(如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "(a))。混合EML表现出高效的电子阻挡能力，从而提高了 QLED 器件效率和寿命，器件的 EQE 为 18.6%，在100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的亮度下寿命为107772小时。由于InP QDs 的导带底(Conduction Band Minimum，CBM)较高，在ZnO或掺杂 ZnO 作为 ETL 的 InP QLED 中，电子注入较快，这导致载流子传输不平衡。2017 年，Wang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "94", "type": "bibr", "rid": "R94", "data": [ { "name": "text", "data": "94" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "用电导率较低的ZnMgO代替ZnO作为InP QLED的ETL，抑制了电子注入，极大地提高了器件性能，其最高亮度超过10000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。2019 年，Lee 等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "95", "type": "bibr", "rid": "R95", "data": [ { "name": "text", "data": "95" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "同样采用ZnMgO作为ETL 实现最大亮度为13900 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、最大EQE 为13.6%的绿色 InP QLED。增强空穴注入和传输，同样可以提高QLED的器件性能。Yeom 等人设计了一种具有高空穴迁移率和深最高占据分子轨道(Highest Occupied Molecular Orbital，HOMO)能级的新型 HTL，N-([1,1'-联苯]-4-基)-N-(4-(二苯并[b,d]" }, { "name": "text", "data": "-噻吩-2-基)苯基)二苯并[b,d]噻吩-2-胺(DBTA)，旨在更快、更有效地将空穴传输到 InP QDs。最终实现的红色 InP QLED 的电流效率达到 23.4 cd/A，EQE 为 21.8%，在 100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "下的工作寿命为 72848 小时。此外，HTL 的最低未占据分子轨道 (Lowest Unoccupied Molecular Orbital，LUMO) 对 EL 效率同样有重要影响，较高 LUMO 的HTL能阻止电子注入并因此抑制寄生发射，从而提高EL效率。Wu等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "用具有更高的LUMO和HOMO能级的聚[双(4-苯基)(2,4,6-三甲基苯基)胺](PTAA)代替TFB，显著抑制了QLED中的寄生发射(如图五(b))。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a） QLED器件结构图、DOFL-TPD 的分子结构图（左）和能级结构图（右）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "93", "type": "bibr", "rid": "R93", "data": [ { "name": "text", "data": "93" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b） 使用 TFB 或 PTAA 作为 HTL 的传统 InP 基 QLED 的能级结构图（左）、EL 发射光谱（中）和EQE随电流的变化曲线（右）" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "（a） structure diagram of QLED device， molecular structure diagram of DOFL-TPD （left）， and energy level structure diagram （right） " }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "93", "type": "bibr", "rid": "R93", "data": [ { "name": "text", "data": "93" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b） energy-level structure diagram （left）， EL spectra （middle）， and EQE versus current curves （right） of conventional InP-based QLED using TFB or PTAA as HTL" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965784&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965786&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965785&type=", "width": "137.44200134", "height": "103.66400146", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "目前报道的红、绿、蓝 InP QLED 的最大 EQE分别为 21.8%、16.3% 和2.8 %" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "92", "type": "bibr", "rid": "R92", "data": [ { "name": "text", "data": "92" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "96", "type": "bibr", "rid": "R96", "data": [ { "name": "text", "data": "96" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "97", "type": "bibr", "rid": "R97", "data": [ { "name": "text", "data": "97" } ] } } ], "rid": [ "R96", "R97" ], "text": "96-97", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。可见InP基红色 QLED 的 EL 性能已经可以与 Cd 基 QLED 相媲美，但蓝色 InP QLED 的器件性能仍与 Cd 基 QLED 相差甚远。最近，将Te 合金化到 ZnSe QDs的ZnSeTe QLED是实现高效无Cd蓝光QLED的一个可行方法。自从首次报道合成具有70% PLQY 的蓝色发射多壳层ZnSeTe/ZnSe/ZnS QDs和具有 4.2% EQE 的 EL 器件以来" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "98", "type": "bibr", "rid": "R98", "data": [ { "name": "text", "data": "98" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，ZnSeTe QLED性能显著提升。Han等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "99", "type": "bibr", "rid": "R99", "data": [ { "name": "text", "data": "99" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "探索了一锅法合成具有更高PLQY(84%)的三层壳蓝色(445 nm) ZnSe/ZnSeS/ZnS QDs，并采用表面改性的 ZnMgO 纳米晶作为ETL，实现更平衡的电荷注入与传输，器件最大EQE达到9%，但器件稳定性较低。Kim等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "100", "type": "bibr", "rid": "R100", "data": [ { "name": "text", "data": "100" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过两步法合成了具有立方体形状和PLQY接近100%的蓝色(457nm)ZnSeTe/ZnSe/ZnS核/壳/壳 QDs。合成时添加氢氟酸(HF)以消除 ZnSe 内壳的堆垛层错(如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "(a))，然后将油酸有机配体与氯离子无机配体交换(如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "(b))。由于氯离子配体提高了材料的热稳定性和空穴迁移率，最终获得的蓝色QLED具有14.3%的高EQE。通过进一步设计具有梯度氯含量的双QDs EML，进一步改善电荷平衡，最终器件的EQE达到 20.2%(如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "(c))，亮度为 88900 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，并且100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的T" }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "=15850 h，性能可以与目前蓝色Cd基QLED相媲美。Lee等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "101", "type": "bibr", "rid": "R101", "data": [ { "name": "text", "data": "101" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过精确控制ZnSeTe 内核中的Te/Se比例，调节ZnSe内壳与ZnS外壳的厚度，实现了463 nm发射波长和90%高PLQY的ZnSeTe/ZnSe/ZnS QDs，相应器件的最大EQE为13.4%。而当波长缩短至455 nm时，器件EQE提高至18%。这是由于短波长的ZnSeTe/ZnSe/ZnS QDs具有更厚的ZnS壳层，提高了QDs的PLQY并改善电荷平衡。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "（a）HF、ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "消除ZnSe 内壳的堆垛层错结构原理示意图；（b）油酸有机配体与氯离子无机配体交换示意图；（c）具有梯度氯含量的双 QDs EML器件结构及器件EQE" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "100", "type": "bibr", "rid": "R100", "data": [ { "name": "text", "data": "100" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "（a）HF and ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " eliminate stacking faults in ZnSe inner shell， （b）exchange of oleic acid organic ligand and chloride inorganic ligand；（c）double QDs EML device structure with gradient chlorine content and device EQE" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "100", "type": "bibr", "rid": "R100", "data": [ { "name": "text", "data": "100" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965787&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965789&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965788&type=", "width": "143.08700562", "height": "114.74099731", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "近年来， PQDs作为一种新型的无Cd QDs，具有高PLQY、可调发射波长、高色纯度和高缺陷容忍度的优点，是下一代QLED显示的有力竞争者。然而钙钛矿QLED面向显示应用主要存在三大问题。一是材料和器件稳定性差。由于PQDs固有的离子特性，对极性溶剂高度敏感" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "102", "type": "bibr", "rid": "R102", "data": [ { "name": "text", "data": "102" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，由于PQDs形成能较低，还极易受光、氧、热等环境因素的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "103", "type": "bibr", "rid": "R103", "data": [ { "name": "text", "data": "103" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "104", "type": "bibr", "rid": "R104", "data": [ { "name": "text", "data": "104" } ] } } ], "rid": [ "R103", "R104" ], "text": "103-104", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。材料的不稳定也导致了PQDs器件的寿命比传统QDs器件短。针对这一问题，人们从材料设计" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "105", "type": "bibr", "rid": "R105", "data": [ { "name": "text", "data": "105" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "106", "type": "bibr", "rid": "R106", "data": [ { "name": "text", "data": "106" } ] } } ], "rid": [ "R105", "R106" ], "text": "105-106", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、器件工程" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "107", "type": "bibr", "rid": "R107", "data": [ { "name": "text", "data": "107" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "108", "type": "bibr", "rid": "R108", "data": [ { "name": "text", "data": "108" } ] } } ], "rid": [ "R107", "R108" ], "text": "107-108", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、器件封装" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "109", "type": "bibr", "rid": "R109", "data": [ { "name": "text", "data": "109" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "110", "type": "bibr", "rid": "R110", "data": [ { "name": "text", "data": "110" } ] } } ], "rid": [ "R109", "R110" ], "text": "109-110", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等方面做出了很多努力，器件寿命有所提高，但仍远低于显示应用的需求" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "111", "type": "bibr", "rid": "R111", "data": [ { "name": "text", "data": "111" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "114", "type": "bibr", "rid": "R114", "data": [ { "name": "text", "data": "114" } ] } } ], "rid": [ "R111", "R112", "R113", "R114" ], "text": "111-114", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。二是高效PQDs通常含有毒的Pb。人们采用Sb、Bi、Sn等元素对Pb进行替代" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "111", "type": "bibr", "rid": "R111", "data": [ { "name": "text", "data": "111" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "115", "type": "bibr", "rid": "R115", "data": [ { "name": "text", "data": "115" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "117", "type": "bibr", "rid": "R117", "data": [ { "name": "text", "data": "117" } ] } } ], "rid": [ "R115", "R116", "R117" ], "text": "115-117", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，然而并没有取得很好的效果，还有待进一步研究。三是蓝光钙钛矿QLED效率低。目前绿光和红光钙钛矿QLED的EQE已经突破20%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "118", "type": "bibr", "rid": "R118", "data": [ { "name": "text", "data": "118" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "119", "type": "bibr", "rid": "R119", "data": [ { "name": "text", "data": "119" } ] } } ], "rid": [ "R118", "R119" ], "text": "118-119", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，尽管人们通过表面钝化、包壳、金属离子掺杂等手段对蓝光钙钛矿QLED进行优化，但EQE只有10%左右" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "120", "type": "bibr", "rid": "R120", "data": [ { "name": "text", "data": "120" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。最近，Jiang等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "114", "type": "bibr", "rid": "R114", "data": [ { "name": "text", "data": "114" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过配体工程策略直接在衬底上生长单分散、超小的蓝光PQDs薄膜并制备了QLED，器件的最大 EQE为17.9%，但器件亮度和寿命分别为3000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和2 h，难以实现显示应用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "因此，与Cd基QLED相比，非Cd基QLED同样面临着蓝光器件性能不足的问题，还存在成本较高、合成方法有待优化、稳定性不足等问题。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　图案化技术" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "工业上大面积全彩显示器的生产与实验室单个器件的制备有很大不同。将实验室原型器件带入商业化显示器之前，需要解决许多技术问题。其中，实现全彩的红/绿/蓝(R/G/B)像素图案化(如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "(a)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "121", "type": "bibr", "rid": "R121", "data": [ { "name": "text", "data": "121" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ")是最关键的技术问题。目前，为了精确地图案化EML，人们采用了喷墨打印(" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "(b)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "122", "type": "bibr", "rid": "R122", "data": [ { "name": "text", "data": "122" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ")、转移打印(" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "(c)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "123", "type": "bibr", "rid": "R123", "data": [ { "name": "text", "data": "123" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ")等图案化技术。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "（a）QDs像素阵列" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "121", "type": "bibr", "rid": "R121", "data": [ { "name": "text", "data": "121" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b）喷墨打印" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "122", "type": "bibr", "rid": "R122", "data": [ { "name": "text", "data": "122" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（c）转移打印" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "123", "type": "bibr", "rid": "R123", "data": [ { "name": "text", "data": "123" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "（a）QDs pixel array" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "121", "type": "bibr", "rid": "R121", "data": [ { "name": "text", "data": "121" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b）inkjet printing" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "122", "type": "bibr", "rid": "R122", "data": [ { "name": "text", "data": "122" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "； （c）transfer printing" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "123", "type": "bibr", "rid": "R123", "data": [ { "name": "text", "data": "123" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965790&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965792&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965791&type=", "width": "139.18800354", "height": "110.47200012", "fontsize": "" } ] } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3.1　喷墨打印" } ], "level": "3", "id": "s3c1" } }, { "name": "p", "data": [ { "name": "text", "data": "喷墨打印技术采用 QDs墨水可以在基板上直接形成所需的图案，具有工艺简单、成本低、自动化程度高、无需接触和掩模等优点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "124", "type": "bibr", "rid": "R124", "data": [ { "name": "text", "data": "124" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。整个喷墨打印过程一般为以下三个步骤：由驱动力控制的喷嘴喷出一定体积的墨滴；液滴落到喷嘴下方的指定位置；液滴扩散和溶剂干燥以形成薄膜。喷墨打印可按需控制材料沉积，最大限度地减少材料浪费。无掩模特性消除了复杂的预图案化过程。生成任意图案的能力对于制造显示器的多色像素阵列具有重要的意义。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "胶体QDs优异的溶液处理能力有利于通过喷墨打印直接制作 RGB 像素图案。然而通过喷墨打印构筑高分辨、高性能QLED器件阵列需要考虑两个关键问题。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "第一个问题是高分辨率喷墨打印需要控制μm尺度的QDs墨水的流变学特性。油墨的流变学特性强烈地决定了油墨的喷射过程，以及此后的线宽。喷墨打印根据驱动墨水喷射的不同策略，可分为气溶胶喷墨打印(Aerosol Jet Printing，AJP)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "125", "type": "bibr", "rid": "R125", "data": [ { "name": "text", "data": "125" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、压电喷墨打印(Inkjet Printing，IJP)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "126", "type": "bibr", "rid": "R126", "data": [ { "name": "text", "data": "126" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "127", "type": "bibr", "rid": "R127", "data": [ { "name": "text", "data": "127" } ] } } ], "rid": [ "R126", "R127" ], "text": "126-127", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和电流体动力(Electro-Hydro Dynamics，EHD)喷墨打印" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "128", "type": "bibr", "rid": "R128", "data": [ { "name": "text", "data": "128" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。油墨的流变学特性需要根据不同策略进行修改，以产生细小的墨线/墨点。这要求油墨具有可控的溶液特性，如浓度、表面张力和粘度，这给 QDs 油墨的设计带来了困难。此外，溶液特性可控的QDs油墨通常需要有机添加剂，这些添加剂阻碍了电荷的有效地注入，降低QLED器件性能。目前，EHD 喷墨打印可实现最高分辨率的QDs图案。Rogers团队使用该技术以亚μm横向分辨率和精确控制厚度的方式沉积均匀的 QDs 图案阵列" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "129", "type": "bibr", "rid": "R129", "data": [ { "name": "text", "data": "129" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。绿色 QLED 的最大亮度和 EQE 分别为 36 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和 2.5%；红色QLED的最大亮度和EQE分别为11 250 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和2.6%。这项工作证明了打印技术可以实现高分辨率的QLED，但器件性能远低于旋涂法制备的QLED。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "第二个问题是需要实现均匀可控的QDs薄膜厚度来获得发光均匀、高性能的QLED阵列。一方面这需要在器件处理过程中避免各层的重新溶解，这同样需要对QDs墨水进行有效设计。另一方面需要尽量减少溶剂蒸发过程中QDs向边缘传输而形成的咖啡环效应(即在干燥后薄膜的边缘比中心厚的现象)。通过调控墨水的溶剂成分，改变墨水的蒸发速率、粘度、表面张力和接触角，可以减少咖啡环的产生" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "130", "type": "bibr", "rid": "R130", "data": [ { "name": "text", "data": "130" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2009年，Jabbour等人通过喷墨打印技术沉积了像素化 QDs 薄膜阵列" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "131", "type": "bibr", "rid": "R131", "data": [ { "name": "text", "data": "131" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。他们选择蒸气压低的氯苯作为QDs的溶剂以减少咖啡环效应。然而，氯苯与poly-TPD (HTL)和 TPBI (ETL)层发生相互作用，导致QDs薄膜的表面粗糙度较高并且存在空隙，最终导致QLED 具有较高的驱动电压和寄生发射。单一成分溶剂的性质不易调节，因此人们发展了混合溶剂。二元溶剂体系，包括癸烷和环己基苯" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "132", "type": "bibr", "rid": "R132", "data": [ { "name": "text", "data": "132" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、环己基苯和茚满" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "133", "type": "bibr", "rid": "R133", "data": [ { "name": "text", "data": "133" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、环己基苯和辛烷" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "134", "type": "bibr", "rid": "R134", "data": [ { "name": "text", "data": "134" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、环己基苯和邻二氯苯" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "126", "type": "bibr", "rid": "R126", "data": [ { "name": "text", "data": "126" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "135", "type": "bibr", "rid": "R135", "data": [ { "name": "text", "data": "135" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、十二烷和甲苯" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "136", "type": "bibr", "rid": "R136", "data": [ { "name": "text", "data": "136" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " 的组合已被广泛采用来抑制咖啡环效应。此外，朝向中心的 Marangoni 流可以与毛细流叠加，从而削弱咖啡环效应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "134", "type": "bibr", "rid": "R134", "data": [ { "name": "text", "data": "134" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "136", "type": "bibr", "rid": "R136", "data": [ { "name": "text", "data": "136" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "137", "type": "bibr", "rid": "R137", "data": [ { "name": "text", "data": "137" } ] } } ], "rid": [ "R136", "R137" ], "text": "136-137", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2022年，Wei等人发展了三元溶剂体系。他们利用环烷、正十三烷和正壬烷的三元溶剂体系抑制QDs聚集并加速溶剂蒸发，抑制咖啡环效应，实现了EQE分别为20.18%、16.38%的喷墨打印红、绿Cd基QLED。遗憾的是，他们没有制作相应的QDs阵列器件。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "虽然喷墨打印为低成本、大面积和基于溶液法的生产提供了更多机会，但材料、设备和技术还不够成熟，高分辨率器件、高性能器件和高效率打印无法同时兼顾。幸运的是，学术界和工业界都在开展这方面的研究工作，预计这些问题将很快得到解决。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3.2　转移打印" } ], "level": "3", "id": "s3c2" } }, { "name": "p", "data": [ { "name": "text", "data": "转移印刷是一种通用性好、精度高的 QDs 图案化方法，特别适用于 EL 器件的应用，因为该方法不涉及用于图案化过程的额外有机添加剂" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "138", "type": "bibr", "rid": "R138", "data": [ { "name": "text", "data": "138" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "(c)所示" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "123", "type": "bibr", "rid": "R123", "data": [ { "name": "text", "data": "123" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "该方法使用预先图案化、具有低表面能的软弹性印模(如全氟聚醚、聚(二甲基硅氧烷))将 QDs 层转移到目标基板上，QDs层的图案化精度取决于印模的图案化精度，因此在制造高像素密度显示器方面具有巨大潜力。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "然而，如果将QDs溶液与印模直接接触，QDs溶剂可侵蚀印模，这将阻碍转印技术在QDs图案化上的应用。2008年，Rizzo等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "139", "type": "bibr", "rid": "R139", "data": [ { "name": "text", "data": "139" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "首次利用转印技术实现QDs的图案化。他们先将QDs沉积在玻璃基板上，待溶剂蒸发后再将QDs转移至印章上进行转印，这解决了QDs溶剂和印模之间的侵蚀问题。同年，Bulović小组" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "123", "type": "bibr", "rid": "R123", "data": [ { "name": "text", "data": "123" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过在印章上预先沉积一层Parylene-C聚合物来避免溶剂侵蚀，同时Parylene-C层的低表面能促进了QDs薄膜的转移。他们制造了具有 25 μm QDs条纹线宽的多色 QLED 像素。印刷的红、绿和蓝QLED 的EQE分别为 2.3%、0.65%和0.35%。2011年，Kim等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "140", "type": "bibr", "rid": "R140", "data": [ { "name": "text", "data": "140" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "对Rizzo等人的方法进行改进。他们使用涂敷十八烷基三氯硅烷(Octadecyltrichlorosilane，ODTS)自组装膜的硅片作为供体基板，以促进QDs层剥离基板。通过这种 ODTS自组装膜，使QDs 的拾取率接近 100%，获得了几乎没有缺陷的 QDs 薄膜。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "此外，对于使用结构化印模的传统转移印刷方法，印模上最初设计的图案与目标基板上的最终QDs图案之间存在严重的形状差异，特别是在高分辨率的转印时。2015年，Choi 等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "121", "type": "bibr", "rid": "R121", "data": [ { "name": "text", "data": "121" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "开发了凹版转移印刷技术来制造具有均匀像素尺寸、 2460 PPI 高分辨率的全彩 QDs 阵列，抑制了QD薄膜在凹版沟槽边缘处的裂纹扩展，从而实现了高良率和准确的图案。2020年，Nam等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "141", "type": "bibr", "rid": "R141", "data": [ { "name": "text", "data": "141" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "开发了热力学驱动的浸入式转移印刷 (immersion Transfer Printing，iTP) 技术，实现了高分辨率全彩QLED阵列，器件EQE为3.3%。2022年，Meng等人" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "142", "type": "bibr", "rid": "R142", "data": [ { "name": "text", "data": "142" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": " 将转移印刷与 Langmuir-Blodgett 薄膜技术相结合(如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "(a)所示)，并在发光QDs像素之间嵌入蜂窝状宽带隙QDs层作为电荷阻挡层，减少了电荷泄露。具有蜂窝阻隔层的器件的分辨率为 9072 PPI，最大 EQE 为 14.72%，最大亮度达到 262400 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，这是迄今为止报道的高分辨率 QLED 的最高值之一。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "（a）Langmuir-Blodgett 薄膜-转印（LB-TP）过程" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "142", "type": "bibr", "rid": "R142", "data": [ { "name": "text", "data": "142" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b）电泳选择性沉积过程" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "153", "type": "bibr", "rid": "R153", "data": [ { "name": "text", "data": "153" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "（a）Langmuir-blodgett film-transfer （LB-TP） process" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "142", "type": "bibr", "rid": "R142", "data": [ { "name": "text", "data": "142" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "；（b）lectrophoretic selective deposition process" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "153", "type": "bibr", "rid": "R153", "data": [ { "name": "text", "data": "153" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965793&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965795&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965794&type=", "width": "96.57063293", "height": "78.80674744", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "上述示例表明，转移印刷可以实现QDs的高分辨率图案化，而无需将器件结构暴露于溶剂中。因此，转移印刷在器件制造方面具有高灵活性。尽管如此，转移印刷的大规模制造还面临许多挑战，例如转印效率、高分辨转印的子像素的分离以及弹性印章结构变形等，这些问题仍需要开发新得技术来解决。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3.3　其他图案化技术" } ], "level": "3", "id": "s3c3" } }, { "name": "p", "data": [ { "name": "text", "data": "光刻技术是制造QDs像素的另一种方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "143", "type": "bibr", "rid": "R143", "data": [ { "name": "text", "data": "143" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "146", "type": "bibr", "rid": "R146", "data": [ { "name": "text", "data": "146" } ] } } ], "rid": [ "R143", "R144", "R145", "R146" ], "text": "143-146", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。光刻时，QDs和光刻胶在溶液相中混合并作为薄膜涂覆在基板上。然后，通过光掩模将其暴露在紫外光下以生成图案，未曝光的部分被溶剂冲洗掉。重复此过程就可以在单个基板上形成 RGB 像素。利用光刻进行图案化可以利用现代半导体工业已建立的技术优势，具有高分辨率和易于大规模制备的优点。然而，由于光刻胶的存在，生成的图案不可避免地含有有机残留物，这些有机残留物可以作为电绝缘层阻碍电荷传输到QDs中。为了最大限度地减少最终 QDs 图案中的有机物含量，人们开发了无机配体-光酸发生剂复合物" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "147", "type": "bibr", "rid": "R147", "data": [ { "name": "text", "data": "147" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "148", "type": "bibr", "rid": "R148", "data": [ { "name": "text", "data": "148" } ] } } ], "rid": [ "R147", "R148" ], "text": "147-148", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、配体交联剂" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "149", "type": "bibr", "rid": "R149", "data": [ { "name": "text", "data": "149" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "150", "type": "bibr", "rid": "R150", "data": [ { "name": "text", "data": "150" } ] } } ], "rid": [ "R149", "R150" ], "text": "149-150", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和选择性电泳沉积 (Selected Electrophoresis Deposition，SEPD)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "151", "type": "bibr", "rid": "R151", "data": [ { "name": "text", "data": "151" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "(" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "(b))等新型光刻工艺。此外，还有3D打印" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "152", "type": "bibr", "rid": "R152", "data": [ { "name": "text", "data": "152" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、选择性光亮化和暗化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "154", "type": "bibr", "rid": "R154", "data": [ { "name": "text", "data": "154" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "157", "type": "bibr", "rid": "R157", "data": [ { "name": "text", "data": "157" } ] } } ], "rid": [ "R154", "R155", "R156", "R157" ], "text": "154-157", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、自组装" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "158", "type": "bibr", "rid": "R158", "data": [ { "name": "text", "data": "158" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "160", "type": "bibr", "rid": "R160", "data": [ { "name": "text", "data": "160" } ] } } ], "rid": [ "R158", "R159", "R160" ], "text": "158-160", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等图案化方法，为QLED 阵列的实现提供了新的思路。" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "总结了各种图案化技术的优缺点及其应用前景。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "图案化技术对比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Table 2" } ], "title": [ { "name": "text", "data": "Comparison of patterning technologies" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "图案化技术" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "优点" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "缺点" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "应用" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "喷墨打印" } ] }, { "align": "justify", "data": [ { "name": "text", "data": "工艺简单、成本低、自动化程度高、无需接触和掩模" } ] }, { "align": "justify", "data": [ { "name": "text", "data": "QDs油墨通常需要有机添加剂，影响器件性能" } ] }, { "align": "center", "data": [ { "name": "text", "data": "大尺寸显示" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "转移打印" } ] }, { "align": "justify", "data": [ { "name": "text", "data": "无有机添加剂、精度高" } ] }, { "align": "justify", "data": [ { "name": "text", "data": "印章结构变形" } ] }, { "align": "center", "data": [ { "name": "text", "data": "高分辨显示" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "光刻" } ] }, { "align": "justify", "data": [ { "name": "text", "data": "精度高" } ] }, { "align": "justify", "data": [ { "name": "text", "data": "成本高、有机残留物影响器件性能" } ] }, { "align": "center", "data": [ { "name": "text", "data": "高分辨、小尺寸显示" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "3D打印" } ] }, { "align": "justify", "data": [ { "name": "text", "data": "能实现显示器件的三维自由成型" } ] }, { "align": "justify", "data": [ { "name": "text", "data": "分辨率较低、器件性能较低" } ] }, { "align": "center", "data": [ { "name": "text", "data": "曲面显示" } ] } ], [ { "align": "center", "data": [ { "name": "text", "data": "选择性光亮化和暗化" } ] }, { "align": "justify", "data": [ { "name": "text", "data": "无需使用有机光刻胶" } ] }, { "align": "justify", "data": [ { "name": "text", "data": "需要对材料进行特殊处理" } ] }, { "align": "center", "data": [ { "name": "text", "data": "高分辨、小尺寸显示" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "自组装" } ] }, { "align": "justify", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "图案化效率高" } ] }, { "align": "justify", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "工艺不成熟，需结合其他图案化技术使用" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "大尺寸显示" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965797&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=38965796&type=", "width": "162.80000305", "height": "48.13123703", "fontsize": "" } } } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　总结与展望" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "在过去的几年里，QLEDs技术在QDs和CTL材料、器件物理、新型结构、制造工艺和图案化等方面都经历了巨大的发展。基于CTL的调控，不仅改善了EML中的电荷平衡，增加了激子的形成概率，而且抑制了不希望的俄歇复合，减少了过剩载流子的溢出电流。同时，通过精细地设计纳米晶体结构，使核壳或合金QDs在溶液态薄膜态都表现出高 PLQY，这意味着非辐射复合过程得到了显著抑制。通过进一步优化CTL/QDs的界面，抑制了CTL/QDs界面处的激子猝灭。通过这些优化策略，红色和绿色 QLED 的 EQE 均已超过 20%，并接近最先进的磷光 OLED 器件性能。此外，器件结构的优化为QLED在柔性光电、固态照明等领域的应用提供了更多机会。随着喷墨印刷、接触和转移印刷、光刻等大规模图案化策略的快速发展，行业巨头已经研制出QLED显示面板。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "但是QLED技术的成功商业化还面临着蓝色 QLED 性能不足、Cd基QDs的材料毒性和QDs像素图案化等诸多挑战。针对这些问题，首先应进一步开发高效蓝光QDs的合成方法和具有较深HOMO/VBM能级和高空穴迁移率的新型HTL材料。其次，应进一步开发高效、窄半宽的无Cd QDs的合成方法，以避免材料毒性阻碍QLED技术的进一步应用。最后，一种低成本、高效率的图案化全彩QLED制造技术应得以研发，以满足QLED显示面板的量产需求。此外，考虑下一代显示器时，OLED和Micro-LED是另外两项不容忽视的技术。目前，OLED是最成熟的一种，在中小尺寸面板中得到了普及。而其稳定性和蒸镀工艺对于大尺寸显示器的生产仍然存在问题，从而限制了OLED的进一步应用。Micro-LED也因其与生俱来的高效率、高亮度、低功耗和长寿命等潜在优势而受到越来越多的关注。然而，刚性的LED结构与未来的透明和柔性显示需求不兼容。更重要的是，Micro-LED的巨量转移仍然具有挑战性，这将导致Micro-LED面板具有低良率和高成本。此外，在 QLED 成熟之前，使用 QDs 的下转换光致发光很可能对OLED和 Micro-LED实现广色域发挥重要作用。从这个意义上说，光致发光QDs的合成开发仍然很重要。这样的发展无疑也将有助于QLED显示器进入商业市场。基于溶液处理的QLED显示器不仅可以提供前所未有的色彩质量和保真度，而且制造简单且成本低。因此，下一代显示的最终解决方案将不取决于这些技术之间的性能比较，而是在量产时对可靠性和成本的考虑。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "尽管存在诸多挑战和竞争，但QLED在显示领域的应用仍有广阔的前景，甚至可以成为OLED和Micro-LED的有力竞争对手，我们可以期待QLED显示在不久的将来成功商业化。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "李继军" }, { "name": "text", "data": "，" }, { "name": "text", "data": "聂晓梦" }, { "name": "text", "data": "，" }, { "name": "text", 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