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沉积参数对铯铅溴钙钛矿薄膜中CsPb2Br5相结构演变和发光特性的影响
| 更新时间：2022-11-24
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沉积参数对铯铅溴钙钛矿薄膜中CsPb2Br5相结构演变和发光特性的影响 增强出版
- Effect of deposition parameters on the luminescence properties and structure evolution of CsPb2Br5 phase in cesium lead bromide perovskite films
- 发光学报 2022年 null卷 第null期 (2022)
- 作者机构：深圳大学，材料学院,广东,深圳,518060;韩山师范学院，材料科学与工程学院,广东,潮州,521041
- 作者简介：
- 基金信息：国家自然科学基金(12104117);广东省自然科学基金(2020A1515010432)
- DOI：10.37188/CJL.20220335 中图分类号：
-
网络出版日期：2022-11-24，
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林淑地,吴海霞,宋捷等.沉积参数对铯铅溴钙钛矿薄膜中CsPb2Br5相结构演变和发光特性的影响[J].发光学报,
LIN shu-di,WU haixia,SONG jie,et al.Effect of deposition parameters on the luminescence properties and structure evolution of CsPb2Br5 phase in cesium lead bromide perovskite films[J].Chinese Journal of Luminescence,
林淑地,吴海霞,宋捷等.沉积参数对铯铅溴钙钛矿薄膜中CsPb2Br5相结构演变和发光特性的影响[J].发光学报, DOI：10.37188/CJL.20220335
LIN shu-di,WU haixia,SONG jie,et al.Effect of deposition parameters on the luminescence properties and structure evolution of CsPb2Br5 phase in cesium lead bromide perovskite films[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20220335
沉积参数对铯铅溴钙钛矿薄膜中CsPb2Br5相结构演变和发光特性的影响 增强出版
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"name": "text",
"data": "1"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "8",
"type": "bibr",
"rid": "R8",
"data": [
{
"name": "text",
"data": "8"
}
]
}
}
],
"rid": [
"R1",
"R2",
"R3",
"R4",
"R5",
"R6",
"R7",
"R8"
],
"text": "1-8",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。目前已发展了多种制备全无机卤化钙钛矿材料的方法，如热注入法"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "9",
"type": "bibr",
"rid": "R9",
"data": [
{
"name": "text",
"data": "9"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "、过饱和结晶法"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "10",
"type": "bibr",
"rid": "R10",
"data": [
{
"name": "text",
"data": "10"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "、一步旋涂法"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "11",
"type": "bibr",
"rid": "R11",
"data": [
{
"name": "text",
"data": "11"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "与化学气相沉积法（CVD）"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "12",
"type": "bibr",
"rid": "R12",
"data": [
{
"name": "text",
"data": "12"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "等。CVD法其可制备大面积、高质量、元素均匀分布和缺陷密度低的CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜，且工艺简单、可控，而成为一种非常有前景的制备技术。刘新风课题组通过调控CVD的生长温度在蓝宝石衬底上实现大面积高质量、低缺陷密度单晶CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜的制备，并在室温下获得阈值为8 μJ cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-2"
}
]
},
{
"name": "text",
"data": "的放大自发辐射"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "13",
"type": "bibr",
"rid": "R13",
"data": [
{
"name": "text",
"data": "13"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。Xu等人利用CVD法在750℃条件下生长了陷阱态密度低、晶粒尺寸大的CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "相钙钛矿薄膜，基于该薄膜构建的光电探测器具有3.2 × 10 "
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-8 "
}
]
},
{
"name": "text",
"data": "A的光电流和~ 2.5 × 10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "的高开/关比"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "12",
"type": "bibr",
"rid": "R12",
"data": [
{
"name": "text",
"data": "12"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。尽管基于CVD法制备的钙钛矿薄膜取得了突破性的进展，然而，由于CsBr与PbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "两者熔点差异大"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "12",
"type": "bibr",
"rid": "R12",
"data": [
{
"name": "text",
"data": "12"
}
]
}
},
{
"name": "text",
"data": ","
},
{
"name": "xref",
"data": {
"text": "14",
"type": "bibr",
"rid": "R14",
"data": [
{
"name": "text",
"data": "14"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，且CVD生长区域存在温差，这导致了所生长的薄膜结构不均匀，存在CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "和 CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "等不同相结构区域"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "15",
"type": "bibr",
"rid": "R15",
"data": [
{
"name": "text",
"data": "15"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "17",
"type": "bibr",
"rid": "R17",
"data": [
{
"name": "text",
"data": "17"
}
]
}
}
],
"rid": [
"R15",
"R16",
"R17"
],
"text": "15-17",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。对于CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "，理论计算表明CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "是间接带隙材料"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "18",
"type": "bibr",
"rid": "R18",
"data": [
{
"name": "text",
"data": "18"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，电子空穴无法通过导带与价带间的跃迁直接复合发光，发光效率低"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "19",
"type": "bibr",
"rid": "R19",
"data": [
{
"name": "text",
"data": "19"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。显然，CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "的存在无疑会限制CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "钙钛矿薄膜在高效发光器件的应用。因此，对CVD法制备的CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "钙钛矿薄膜中CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "的调控尤为重要。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本文通过CVD法制备了铯铅溴钙钛矿薄膜，并利用XRD、扫描电镜、电子能谱仪及荧光光谱仪研究了反应气压与N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量对其中的CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "相结构的影响。实验表明N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量是调控CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "相结构和发光特性的有效手段，而反应气压的变化对CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "相结构无影响。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2 实 验"
}
],
"level": "1",
"id": "s2"
}
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.1 薄膜制备"
}
],
"level": "2",
"id": "s2a"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本文利用化学气相沉积方法，以CsBr与PbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "作为前驱体制备大面积铯铅溴钙钛矿薄膜。实验药品为西安宝莱特光电科技公司生产的纯度99.9% 的CsBr、PbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "粉末，其质量比为1：2。称取总量为0.15g的 CsBr与PbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "粉末，并将其分别置于管式炉的加热中心区域，两者相距1cm。将长*宽为8*1cm的氧化硅衬底（氧化层厚度为300nm的SiO"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "/Si单晶基底）放置管式炉下游位置，通过控制抽气口实现对其生长气压的调控。管式炉的本底真空为6帕，通入高纯度N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "作为载气，炉管中心温度为630℃，样品放置处所对应区域①的温度约为360℃±20℃，区域②的温度约为260℃±20℃。薄膜生长时间为5min。薄膜生长完成后掀开炉盖让其自然降温，并停止载气的通入，待炉温冷却后取出样品。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "为了研究不同制备工艺参数对薄膜的影响，实验中在N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量为30sccm条件下，改变反应气压：50pa、100pa、150pa、200pa、300pa；以及在气压为100pa条件下，改变N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量：5sccm、10sccm、20sccm、30sccm、60sccm。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.2 薄膜表征"
}
],
"level": "2",
"id": "s2b"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "在室温下，利用LabRAM HR Evolution高分辨拉曼光谱仪、Edinburgh FLS980光谱仪在325nm的光激发下测量薄膜的发光光谱，利用场发射扫描电子显微镜（SU5000）观测薄膜表面形貌，利用电子能谱仪分析元素成分，利用D8 Advance X-射线衍射仪表征物相结构。"
}
]
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "3 结果与讨论"
}
],
"level": "1",
"id": "s3"
}
},
{
"name": "p",
"data": [
{
"name": "xref",
"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
{
"name": "text",
"data": "图1"
}
]
}
},
{
"name": "text",
"data": "显示不同反应气压条件下制备的全无机铯铅溴钙钛矿薄膜照片，由图可知，所制备的薄膜均存在两个明显不同的区域（黄色区域①和淡蓝色区域②）。XRD分析表明区域①的薄膜呈现CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "单斜相特征结构"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "20",
"type": "bibr",
"rid": "R20",
"data": [
{
"name": "text",
"data": "20"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，而区域②的薄膜呈现CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "四方相特征结构"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "21",
"type": "bibr",
"rid": "R21",
"data": [
{
"name": "text",
"data": "21"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，如图"
},
{
"name": "xref",
"data": {
"text": "2",
"type": "fig",
"rid": "F2",
"data": [
{
"name": "text",
"data": "2"
}
]
}
},
{
"name": "text",
"data": "(a)和"
},
{
"name": "xref",
"data": {
"text": "2",
"type": "fig",
"rid": "F2",
"data": [
{
"name": "text",
"data": "2"
}
]
}
},
{
"name": "text",
"data": "(b)所示。对于区域①，由"
},
{
"name": "xref",
"data": {
"text": "图2",
"type": "fig",
"rid": "F2",
"data": [
{
"name": "text",
"data": "图2"
}
]
}
},
{
"name": "text",
"data": "（a）还可知，100pa 条件下制备的CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜的主峰半高宽最窄，且其峰强较强，这表明100pa条件下，薄膜CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "晶粒最大，晶化度高。而随着反应气压的增大，主峰半高宽增大，且峰强减弱，这表明随着反应气压的增大，晶粒变小，结晶度降低。对于区域②，由"
},
{
"name": "xref",
"data": {
"text": "图2",
"type": "fig",
"rid": "F2",
"data": [
{
"name": "text",
"data": "图2"
}
]
}
},
{
"name": "text",
"data": "（b）可知，CsPb"
},
{
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"data": [
{
"name": "text",
"data": "2"
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]
},
{
"name": "text",
"data": "Br"
},
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"data": [
{
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"data": "5"
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]
},
{
"name": "text",
"data": "薄膜主峰强度随着反应气压的增大而略微增强，半高宽则无明显变化，这表明反应气压对CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "薄膜的结构影响小。"
}
]
},
{
"name": "fig",
"data": {
"id": "F1",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图1"
}
],
"title": [
{
"name": "text",
"data": "不同反应气压条件下制备的全无机铯铅溴钙钛矿薄膜照片（黄色区域①和淡蓝色区域② ）"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.1"
}
],
"title": [
{
"name": "text",
"data": "Photographs of all-inorganic cesium lead bromide perovskite films prepared with different reaction pressures （yellow area ① and light blue area ②）"
}
]
}
],
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"data": "图2"
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],
"title": [
{
"name": "text",
"data": "不同反应气压下制备的薄膜的XRD图谱. （a）区域①CsPbBr"
},
{
"name": "sub",
"data": [
{
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"data": "3"
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]
},
{
"name": "text",
"data": "薄膜（PDF#18-0364； （b）区域②CsPb"
},
{
"name": "sub",
"data": [
{
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"data": "2"
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{
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"data": "Br"
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"data": [
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]
},
{
"name": "text",
"data": "薄膜（PDF#25-0211）"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.2"
}
],
"title": [
{
"name": "text",
"data": "XRD patterns of films with different reaction pressures. （a） CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3 "
}
]
},
{
"name": "text",
"data": "film （PDF#18-0364） of area ①； （b） CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": " film （PDF#25-0211） of area ②"
}
]
}
],
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"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "的PL谱分析表明在325nm波长激发下区域①的薄膜展现主峰位于~530nm的发射光谱，与CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "的特征发光峰相吻合。我们注意到PL 谱可以分解为一个发光峰位于 528 nm的窄谱和一个发光峰位位于540 nm的宽谱。根据文献报道，高能侧的窄发射光谱源于自由激子辐射复合，低能侧的宽发射光谱则源于Br空位缺陷引起的束缚激子辐射复合"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "22",
"type": "bibr",
"rid": "R22",
"data": [
{
"name": "text",
"data": "22"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
{
"name": "text",
"data": "25"
}
]
}
}
],
"rid": [
"R22",
"R23",
"R24",
"R25"
],
"text": "22-25",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。与区域①不同，区域②的薄膜则呈现主峰位于~630nm的宽带弱发射峰，该峰为CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "自陷激子态引起的光发射"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "18",
"type": "bibr",
"rid": "R18",
"data": [
{
"name": "text",
"data": "18"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "的扫描电子显微镜照片显示不同反应气压下制备的薄膜的表面形貌，由"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "(a)-(c)可知区域①的薄膜表面颗粒尺寸均较大，约5—10um。相反，(d)-(f)显示区域②的薄膜颗粒尺寸均较小，从SEM图可看出，随着反应气压的增大，颗粒尺寸逐渐由约1µm减小至约0.5µm。这可能是由于反应气压的增大，提高了反应腔体内的分子数密度，使得生长速率变快，进而不利于晶粒长大。"
}
]
},
{
"name": "fig",
"data": {
"id": "F3",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图3"
}
],
"title": [
{
"name": "text",
"data": "不同反应气压下制备的薄膜的发光谱. （a）区域①CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜； （b）区域②CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "薄膜"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.3"
}
],
"title": [
{
"name": "text",
"data": "PL spectra of films with different reaction pressures. （a） CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3 "
}
]
},
{
"name": "text",
"data": "film of area ①； （b） CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5 "
}
]
},
{
"name": "text",
"data": "film of area ②"
}
]
}
],
"subcaption": [],
"note": [],
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"data": "图4"
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],
"title": [
{
"name": "text",
"data": "不同反应气压下制备的薄膜的SEM图. （a）-（c） 50pa、150pa、300pa的区域①CsPbBr"
},
{
"name": "sub",
"data": [
{
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"data": "3"
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]
},
{
"name": "text",
"data": "薄膜； （d）-（f） 50pa、150pa、300pa的区域②CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
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]
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{
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"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "薄膜"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.4"
}
],
"title": [
{
"name": "text",
"data": "SEM images of films with different reaction pressures. （a）-（c） 50pa、150pa、300pa of CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": " film of area ①； （d）-（f） 50pa、150pa、300pa of CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": " film of area ②"
}
]
}
],
"subcaption": [],
"note": [],
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{
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"data": [
{
"name": "text",
"data": "从"
},
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "（a）还可发现，100Pa条件下制备的区域①薄膜PL最强，300Pa条件下制备的区域①薄膜PL最弱，结合"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "的SEM结果分析，我们认为这主要由于100Pa条件下制备的薄膜晶粒尺寸大，而300Pa条件下制备的薄膜晶粒尺寸小，晶粒变小导致晶界增加，表面态增多，进而导致非辐射复合中心增多，发光变弱。在以上研究的基础上，我们进一步研究反应气压为100pa的条件下不同流量对区域②薄膜相结构的影响。"
},
{
"name": "xref",
"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
{
"name": "text",
"data": "图5"
}
]
}
},
{
"name": "text",
"data": "显示不同N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量条件下制备的全无机铯铅溴钙钛矿薄膜照片，由图可知，在N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量为60sccm时，所制备的薄膜与"
},
{
"name": "xref",
"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
{
"name": "text",
"data": "图1"
}
]
}
},
{
"name": "text",
"data": "相似，存在两个明显不同的区域，分别对应黄色区域①与淡蓝色区域②。然而，随着N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量逐渐减小，区域②的淡蓝色面积逐渐变小，当流量减小为5sccm时，区域②转变为黄色，与区域①趋于一致。"
}
]
},
{
"name": "fig",
"data": {
"id": "F5",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图5"
}
],
"title": [
{
"name": "text",
"data": "不同N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量条件下制备的全无机铯铅溴钙钛矿薄膜照片"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.5"
}
],
"title": [
{
"name": "text",
"data": "Photographs of all-inorganic cesium lead bromide perovskite films prepared with different N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": " flow"
}
]
}
],
"subcaption": [],
"note": [],
"graphics": [
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"data": [
{
"name": "xref",
"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图6"
}
]
}
},
{
"name": "text",
"data": "的XRD分析表明在N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量为60sccm时，区域②的薄膜呈现CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "四方相结构特征，随着N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量的减小，区域②薄膜相结构逐渐发生变化，当N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量为5sccm时，薄膜呈现CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "和CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "的混合相结构，这说明减少N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量有利于区域②薄膜CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "四方相向CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "单斜相转变。由"
},
{
"name": "xref",
"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图6"
}
]
}
},
{
"name": "text",
"data": "还可知，随着氮气流量从10sccm降低至5sccm时，CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "相的衍射主峰强度略有增强，但半高宽无明显变化。由"
},
{
"name": "xref",
"data": {
"text": "图7",
"type": "fig",
"rid": "F7",
"data": [
{
"name": "text",
"data": "图7"
}
]
}
},
{
"name": "text",
"data": "的PL谱可知，在325nm波长激发下，当N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量为60sccm时，区域②的薄膜呈现主峰位于~630nm的宽带弱发射峰。当N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量减小为5sccm时，薄膜的光发射显著增强，并且发光峰位蓝移至~530nm，其半高宽明显变窄，结合"
},
{
"name": "xref",
"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图6"
}
]
}
},
{
"name": "text",
"data": "的XRD分析结果可知，光发射特性随N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量的显著变化可归咎于CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "四方相向CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "单斜相的转变。我们注意到当N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量从10sccm减小为5sccm时，PL的峰值发生了红移，这可能为束缚激子辐射复合所导致"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "23",
"type": "bibr",
"rid": "R23",
"data": [
{
"name": "text",
"data": "23"
}
]
}
},
{
"name": "text",
"data": ","
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
{
"name": "text",
"data": "25"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "26",
"type": "bibr",
"rid": "R26",
"data": [
{
"name": "text",
"data": "26"
}
]
}
}
],
"rid": [
"R25",
"R26"
],
"text": "25-26",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。"
}
]
},
{
"name": "fig",
"data": {
"id": "F6",
"caption": [
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"lang": "zh",
"label": [
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"data": "图6"
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"data": "不同N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量区域②薄膜的XRD图谱，其中CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
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"data": "（PDF#18-0364）、CsPb"
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{
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"data": "2"
}
]
},
{
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"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "（PDF#25-0211）"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.6"
}
],
"title": [
{
"name": "text",
"data": "XRD patterns of films with different N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2 "
}
]
},
{
"name": "text",
"data": "flows at area ② （the marked diffraction peaks of CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": " film (PDF#18-0364) and CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": " film (PDF#25-0211))"
}
]
}
],
"subcaption": [],
"note": [],
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},
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]
},
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"data": "流量区域②薄膜的PL图谱"
}
]
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"label": [
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"data": "Fig.7"
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],
"title": [
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"data": "PL spectra of films with different N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": " flow at area ②"
}
]
}
],
"subcaption": [],
"note": [],
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"data": [
{
"name": "xref",
"data": {
"text": "图8",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8"
}
]
}
},
{
"name": "text",
"data": "显示区域②薄膜的扫描电子显微图片，由"
},
{
"name": "xref",
"data": {
"text": "图8",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8"
}
]
}
},
{
"name": "text",
"data": "可知，当N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量为60sccm时，薄膜颗粒尺寸较小，约为0.5-1um，随着N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量的减小，颗粒尺寸不断增大，当N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量减小为5sccm时，其颗粒尺寸增大至约2-5um。"
},
{
"name": "xref",
"data": {
"text": "图9",
"type": "fig",
"rid": "F9",
"data": [
{
"name": "text",
"data": "图9"
}
]
}
},
{
"name": "text",
"data": "给出区域②薄膜Cs、Pb、Br元素的含量比随不同N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量的变化关系，其中的Cs、Pb、Br元素含量比由EDS能谱测得。由图可知，随着N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量的减小，薄膜中Cs、Pb、Br的原子百分比变化明显，当N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量由60sccm减少至5sccm时，薄膜中Cs、Pb、Br的原子百分比由1：2：5转变为接近1：1：3。这也进一步证明了薄膜中CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "四方相向CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "单斜相的转变。"
}
]
},
{
"name": "fig",
"data": {
"id": "F8",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图8"
}
],
"title": [
{
"name": "text",
"data": "不同N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量区域②薄膜的SEM图 （a）5sccm； （b）30sccm； （c）60sccm"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.8"
}
],
"title": [
{
"name": "text",
"data": "SEM images of films with different N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": " flow at area ② （a）5sccm； （b）30sccm； （c）60sccm"
}
]
}
],
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"note": [],
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"data": "由EDS能谱所得到的区域②薄膜Cs、Pb、Br元素含量随不同N"
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"name": "sub",
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{
"name": "text",
"data": "2"
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]
},
{
"name": "text",
"data": "流量变化的比例图"
}
]
},
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"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.9"
}
],
"title": [
{
"name": "text",
"data": "The elemental content of Cs、Pb、Br ratio chart of films obtained by EDS results with different N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": " flow at area ②"
}
]
}
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"note": [],
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{
"name": "p",
"data": [
{
"name": "text",
"data": "在我们实验中，相比于CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "相结构，形成CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "相结构所需能量较低。由于区域①更靠近加热源，其所获得的能量相对更高，故容易形成CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "相，在同样的反应气压和氮气流量下，由于PbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "(917℃@1atom and 20.75 kJ mol"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": " )的蒸发温度与升华焓均比CsBr(1300℃@1atom and 23.64 kJ mol"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1 "
}
]
},
{
"name": "text",
"data": ")低"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "14",
"type": "bibr",
"rid": "R14",
"data": [
{
"name": "text",
"data": "14"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，同时，区域②的温度比区域①低，使得区域②形成富PbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "，易形成CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "薄膜。另一方面，在气压恒定的条件下，流量越大，气相中反应分子基团平均获得的能量越少，同时，流量越大，反应分子基团在反应区域停留的时间也越短"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "27",
"type": "bibr",
"rid": "R27",
"data": [
{
"name": "text",
"data": "27"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。显然，较大的N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量不利于CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "晶核的形成和生长，这可能是导致N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量（大于等于20sccm）条件下在区域②生长的是CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "相结构，而不是CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "相结构的原因。相比于大的N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量条件，当N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量（小于等于10sccm）较小时，气相中反应气体分子平均可获得更多的能量，同时由于流量变小，反应气体分子在反应区停留的时间也变长，这无疑有助于CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "晶核的形成和生长，我们认为这可能是导致低N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量条件下区域②薄膜中CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "四方相向CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "单斜相转变的主要原因。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "4 结 论"
}
],
"level": "1",
"id": "s4"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本文通过CVD法制备了铯铅溴钙钛矿薄膜，并研究了反应气压与N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量对其中的CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "相结构的影响。研究结果表明，反应气压的变化对薄膜中CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "相结构无影响，而N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量的减少则使得薄膜中部分CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "相结构逐渐转变为CsPbBr"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "相，并且颗粒尺寸变大，其发光也由以~640nm为主的宽带发射转变为以~525nm为主的窄带发射。实验表明N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量是调控CsPb"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "Br"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "5"
}
]
},
{
"name": "text",
"data": "相结构和发光特性的有效手段。"
}
]
}
]
}
],
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"data": "林淑地,吴海霞,宋捷等.沉积参数对铯铅溴钙钛矿薄膜中CsPb"
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"text": "林淑地,吴海霞,宋捷等.沉积参数对铯铅溴钙钛矿薄膜中CsPb2Br5相结构演变和发光特性的影响[J].发光学报,DOI:10.37188/CJL.20220335"
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"data": [
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"text": "LIN shu-di,WU haixia,SONG jie,et al.Effect of deposition parameters on the luminescence properties and structure evolution of CsPb2Br5 phase in cesium lead bromide perovskite films[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20220335"
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"fundinggroup": [
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"lang": "zh",
"text": [
{
"name": "text",
"data": "国家自然科学基金（12104117）、广东省自然科学基金（2020A1515010432）"
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"text": [
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"data": "Supported by National Natural Science Foundation of China（12104117）； Natural Science Foundation of Guangdong Province（2020A1515010432）"
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"opub": "2022-11-24"
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},
"appendix": [],
"type": "research-article",
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"supplementary": [],
"journalTitle": "发光学报",
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}
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