基于PbZr_0.52Ti_0.48O₃铁电薄膜的高性能自驱动紫外光电探测器 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于PbZr" }, { "name": "sub", "data": [ { "name": "text", "data": "0.52" } ] }, { "name": "text", "data": "Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "0.48" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "铁电薄膜的高性能自驱动紫外光电探测器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "High-performance Self-powered Ultraviolet Photodetectors based on Ferroelectric PbZr" }, { "name": "sub", "data": [ { "name": "text", "data": "0.52" } ] }, { "name": "text", "data": "Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "0.48" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " Thin Films" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "叶", "givenname": "昊熙", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YE", "givenname": "Hao-xi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "叶昊熙（2001-），男，广东清远人，本科生在读，佛山科学技术学院，主要从事光电探测及光学成像方面的研究。 E-mail：1325297857@qq.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597092&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597094&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597093&type=", "width": "23.99447823", "height": "26.48287964", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "叶昊熙" }, { "name": "text", "data": "（2001-），男，广东清远人，本科生在读，佛山科学技术学院，主要从事光电探测及光学成像方面的研究。 E-mail：" }, { "name": "text", "data": "1325297857@qq.com" } ] ] } ], "email": "1325297857@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "苏", "givenname": "嘉韵", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SU", "givenname": "Jia-yun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "钟", "givenname": "日健", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHONG", "givenname": "Ri-jian", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "蔡", "givenname": "静", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CAI", "givenname": "Jing", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： caijing@fosu.edu.cn", "data": [ { "name": "text", "data": "E-mail： caijing@fosu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "蔡 静（1987-），女，湖南郴州人，硕士研究生，实验师，2013年于暨南大学获得硕士学位，主要从事光电探测及光学成像方面的研究。E-mail：caijing@fosu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597095&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597097&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597096&type=", "width": "19.21924591", "height": "28.02487183", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "蔡 静" }, { "name": "text", "data": "（1987-），女，湖南郴州人，硕士研究生，实验师，2013年于暨南大学获得硕士学位，主要从事光电探测及光学成像方面的研究。E-mail：" }, { "name": "text", "data": "caijing@fosu.edu.cn" } ] ] } ], "email": "caijing@fosu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "佛山科学技术学院 物理与光电工程学院， 广东 佛山　528000", "data": [ { "name": "text", "data": "佛山科学技术学院 物理与光电工程学院， 广东 佛山　528000" } ] }, { "lang": "en", "label": "1", "text": "School of Physics and Optoelectronic Engineering， Foshan University， Foshan 528000， China", "data": [ { "name": "text", "data": "School of Physics and Optoelectronic Engineering， Foshan University， Foshan 528000， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "粤港澳智能微纳光电技术联合实验室， 广东 佛山　528000", "data": [ { "name": "text", "data": "粤港澳智能微纳光电技术联合实验室， 广东 佛山　528000" } ] }, { "lang": "en", "label": "2", "text": "Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology， Foshan University， Foshan 528000， China", "data": [ { "name": "text", "data": "Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology， Foshan University， Foshan 528000， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "光电探测器在成像、通信、医疗、环境监测、生物传感等领域具有重要的应用，近年来备受研究人员的关注。采用铁电薄膜材料作为光吸收层，利用铁电极化场驱动载流子定向运动，可以大幅度简化探测器的器件结构，降低探测器的制备成本。本文中，我们利用溶胶-凝胶方法在掺氟二氧化锡（FTO）衬底上制备了PbZr" }, { "name": "sub", "data": [ { "name": "text", "data": "0.52" } ] }, { "name": "text", "data": "Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "0.48" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（PZT）铁电薄膜，并在此基础上获得了高效的自驱动紫外光探测的结果。形貌、结构、电学、铁电特性测试结果显示PZT铁电薄膜表面平整、致密、缺陷浓度低、铁电特性优异（室温下，剩余极化为2" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "r = 35.2 μC/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，矫顽电场为 ~ 10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " V/cm量级）。进一步构建了性能优异的Au/PZT/FTO结构自驱动光电探测器。在0 V偏压下，探测器的光响应度和比探测率分别为0.072 A/W和4.35 × 10" }, { "name": "sup", "data": [ { "name": "text", "data": "11" } ] }, { "name": "text", "data": " Jones，光探测性能优于已报道的同类型器件的结果。本文的研究结果证实了PZT铁电薄膜基自驱动紫外光电探测器的优越性，并为将来研制器件结构简单、性能优异的自驱动光电探测器提供一定的借鉴。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "In recent years， photodetectors have been an important research subject due to their potential applications in imaging， communication， medical analysis， environmental monitoring， and biological sensing. Employing the ferroelectric materials featured with typical ferroelectric polarization as absorbers will simplify the device structure and lower the cost. In the current work， self-powered ultraviolet photodetectors have been fabricated based on ferroelectric PbZr" }, { "name": "sub", "data": [ { "name": "text", "data": "0.52" } ] }, { "name": "text", "data": "Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "0.48" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（PZT）thin films. The ferroelectric PZT thin films were prepared using a sol-gel method. Morphological， structural， electrical， and ferroelectric characterizations showed that the as-grown ferroelectric PZT thin films possessed a smooth and dense surface， low density， high remnant polarization（2" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "r=35.2 μC/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）and coercive electric field（~ 10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " V/cm）. On this basis， high-performance self-powered ultraviolet photodetectors with Au/PZT/FTO structure have been fabricated. Interestingly， under the bias voltage of 0 V， the responsivity and detectivity are as high as 0.072 A/W and 4.35×10" }, { "name": "sup", "data": [ { "name": "text", "data": "11" } ] }, { "name": "text", "data": " Jones， respectively， which are higher than most of state-of-the-art reported results. The results shown in this paper highlight the superiorities of ferroelectric PZT-based self-powered ultraviolet photodetectors and provide a promising strategy for the development of high-performance self-powered photodetectors with simple device structures in future." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "光电探测器" } ], [ { "name": "text", "data": "自驱动" } ], [ { "name": "text", "data": "紫外光探测" } ], [ { "name": "text", "data": "铁电材料" } ], [ { "name": "text", "data": "PbZr" }, { "name": "sub", "data": [ { "name": "text", "data": "0.52" } ] }, { "name": "text", "data": "Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "0.48" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "Photodetector" } ], [ { "name": "text", "data": "self-powered" } ], [ { "name": "text", "data": "ultraviolet photodetection" } ], [ { "name": "text", "data": "ferroelectrics" } ], [ { "name": "text", "data": "PbZr" }, { "name": "sub", "data": [ { "name": "text", "data": "0.52" } ] }, { "name": "text", "data": "Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "0.48" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "光电探测器是一种将光信号转换成电信号的光电子器件，其在成像、通信、医疗、环境监测、生物传感等领域具有重要的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5", "R6" ], "text": "1-6", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。自驱动光电探测器是一类不需要驱动电源的器件，这类器件具有超低的背景噪声电流、高的开关比、节能等优点，受到了研究人员的广泛关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R7", "R8", "R9", "R10", "R11" ], "text": "7-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "近年来，研究人员基于PN结或肖特基结制备出了多种自驱动光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } } ], "rid": [ "R12", "R13", "R14", "R15", "R16" ], "text": "12-16", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在上述器件中，结区内建电场驱动光生载流子（电子和空穴）定向运动，从而产生了光电流。然而，这类器件往往具有较为复杂的制备工艺，一定程度上限制了其的应用。例如，在制备PN结时，必须要对半导体材料进行可控的P和N型掺杂。另外，也有研究者提出了一种将半导体和非对称金属电极相结合的金属-半导体-金属（MSM）结构器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R17", "R18", "R19", "R20" ], "text": "17-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其内建电场是由两个金属电极的功函数差形成的。然而，探测器的性能取决于两端金属电极的功函数，这严重制约了探测器性能的提升。在上述器件中，内建电场源于半导体/半导体或半导体/金属之间的功函数差，且内建电场仅局限在厚度较薄的界面处" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。相比之下，铁电材料具有较强的自发极化和铁电极化现象，且在电极化的作用下，在铁电薄膜的整个厚度范围内形成了强的内建电场" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } } ], "rid": [ "R22", "R23", "R24" ], "text": "22-24", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同时，在外电场的作用下，铁电薄膜的电极化可以得到增强或翻转。另外，铁电材料还具有独特的体光伏效应，即器件的开路电压通常不受其禁带宽度的限制" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由此，近年来研究人员利用铁电材料制备出结构简单且性能优异的自驱动光电探测器。例如，Zhang等人报道了Au/La掺杂锆钛酸铅（LPZT）/掺氟二氧化锡（FTO）结构的自驱动紫外光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。结果显示，在0 V偏压下，该器件的光响应度和比探测率分别为2.05 mA/W和5.45 × 10" }, { "name": "sup", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": " Jones。另外，研究人员还利用铁酸铋（BFO）铁电材料获得了光响应度和比探测率高达6.0 × 10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " A/W和1 × 10" }, { "name": "sup", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": " Jones的结果[27]。进一步地，研究结果还显示通过适当的预极化处理，可以进一步提高铁电材料自驱动光电探测器的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在众多铁电材料（例如，BiFeO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、BaTiO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、PbZr" }, { "name": "sub", "data": [ { "name": "text", "data": "0.2" } ] }, { "name": "text", "data": "Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "0.8" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、PbZr" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、PbZr" }, { "name": "sub", "data": [ { "name": "text", "data": "0.52" } ] }, { "name": "text", "data": "Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "0.48" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "等）中，PbZr" }, { "name": "sub", "data": [ { "name": "text", "data": "0.52" } ] }, { "name": "text", "data": "Ti" }, { "name": "sub", "data": [ { "name": "text", "data": "0.48" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（PZT）具有优异的铁电特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，同时它还是宽禁带半导体材料（室温下禁带宽度约为3.5 eV），因此，PZT是制备自驱动紫外光电探测器的重要铁电材料。本文中，我们采用溶胶-凝胶（Sol-gel）方法在FTO衬底上生长了具有优异铁电特性的PZT铁电薄膜，在此基础上进一步获得了性能优异的自驱动紫外光电探测器。结果表明，PZT铁电薄膜具有优异的铁电特性，在0 V偏压下，PZT铁电薄膜基光电探测器光响应度和比探测率分别高达0.072 A/W和1.6 × 10" }, { "name": "sup", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": " Jones，光探测性能优于目前报道的结果。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　PZT薄膜的生长" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "采用Sol-gel方法生长PZT铁电薄膜，过程如下：（1）PZT溶胶的准备。首先，将16.69 g三水合乙酸铅溶于60 g乙酸中，并将其在240 °C温度下脱水，直到其重量减至40 g，获得Pb溶胶；将3.63 g正丁醇锆、10.89 g钛酸四丁酯、64 g 2-甲氧基甲醇溶于8 g乙酸中，获得锆钛（ZT）溶胶。然后，在低速搅拌的条件下，将Pb溶胶逐渐滴加至ZT溶胶中，滴加结束后，继续搅拌。最后，将混合溶胶放置在冰箱（4 ℃）中静置7天，最终得到透明的PZT溶胶。（2）PZT铁电薄膜的生长。利用旋涂的方法，在FTO衬底上生长PZT铁电薄膜，旋涂结束后将PZT铁电薄膜依次在200 ℃和640 ℃温度下退火。重复上述过程4次，最后获得所需的PZT铁电薄膜，实验过程如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "a所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a）溶胶-凝胶方法制备PZT铁电薄膜的实验过程。（b-c）PZT铁电薄膜基自驱动光电探测器的（b）示意图和（c）实物照片，比例尺为1.0 mm。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "（a）Scheme of growth procedure of ferroelectric PZT thin films.（2）Scheme and（c）photo image of PZT-based self-powered photodetectors. Scale bar：1.0 mm." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597098&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597100&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597099&type=", "width": "102.37599945", "height": "72.81300354", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　光电探测器的制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "结合掩膜技术，采用热蒸发法在PZT铁电薄膜表面蒸镀圆形Au电极（直径为300 µm，厚度为10 nm），形成Au/PZT/FTO结构的光电探测器，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "b和c所示。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　PZT铁电薄膜及光电探测器的表征" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "利用扫描电子显微镜（SEM，Zeiss Sigma 300）、X射线衍射（XRD，Bruker D8 Advance，λ=1.5406 Å）和紫外-可见光分光光度计（UV-2600）手段表征PZT铁电薄膜的形貌、结构和光学特性。利用铁电分析仪（TF Analyzer 2000）表征PZT铁电薄膜的铁电特性，其中测试频率为1k Hz（在测试前，PZT铁电薄膜经过了频率为1k Hz、幅度为15 V双极性电脉冲1000次循环的疲劳测试）。利用自主搭建的光响应测试系统（包含氙灯、单色仪、探针台、显微镜、吉时利2401源表、半导体参数分析仪）测量光电探测器的性能。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "a显示的是PZT铁电薄膜的SEM图像，可以看出PZT铁电薄膜表面平整、光滑、无孔洞，且薄膜厚度均匀。由" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "a插图可知PZT铁电薄膜的厚度约为160 nm。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "b显示的是PZT铁电薄膜的XRD测试结果。XRD峰位分别位于22.00" }, { "name": "sup", "data": [ { "name": "text", "data": "o" } ] }, { "name": "text", "data": "、31.71" }, { "name": "sup", "data": [ { "name": "text", "data": "o" } ] }, { "name": "text", "data": "、39.23" }, { "name": "sup", "data": [ { "name": "text", "data": "o" } ] }, { "name": "text", "data": "、44.05" }, { "name": "sup", "data": [ { "name": "text", "data": "o" } ] }, { "name": "text", "data": "、46.03" }, { "name": "sup", "data": [ { "name": "text", "data": "o" } ] }, { "name": "text", "data": "和56.89" }, { "name": "sup", "data": [ { "name": "text", "data": "o" } ] }, { "name": "text", "data": "（用★表示），与PDF卡片：33-0784一致，说明制备的PZT铁电薄膜中Zr和Ti的含量分别为0.52和0.48。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "c显示了PZT铁电薄膜的吸收光谱曲线，可以看出PZT铁电薄膜在325 nm处有一个强的吸收峰。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "c插图是（" }, { "name": "italic", "data": [ { "name": "text", "data": "αhν" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "与光子能量（" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "）的函数关系图，由此计算得到PZT铁电薄膜的光学带隙为3.54 eV，与文献报道的结果一致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "PZT铁电薄膜的特性。（a）SEM形貌结果。插图是放大的薄膜表面SEM结果和截面SEM结果。（b）XRD曲线。（c）吸收光谱曲线。插图是（" }, { "name": "italic", "data": [ { "name": "text", "data": "αhν" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "的函数关系曲线。（d）电滞回线及相应的伏安特性曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Typical features of ferroelectric PZT thin films.（a）SEM images. The inset shows the enlarged top-view and cross-section SEM images.（b）XRD patterns.（c）Absorption spectrum. The inset shows the plot of（" }, { "name": "italic", "data": [ { "name": "text", "data": "αhν" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " as a function of photon energy（" }, { "name": "italic", "data": [ { "name": "text", "data": "hν）" } ] }, { "name": "text", "data": ".（d）Polarization-electric and corresponding current-voltage curves." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597101&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597103&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597102&type=", "width": "145.10397339", "height": "111.88979340", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "d显示的是PZT铁电薄膜的电滞回线和相应的伏安特性（I-V）曲线的结果。可以看出PZT铁电薄膜的漏电流非常低，这说明PZT铁电薄膜内浅能级缺陷浓度较低。同时，由电滞回线可知PZT铁电薄膜的剩余极化强度（2" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "r" } ] }, { "name": "text", "data": "）和矫顽电场（" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "）分别为35.2 μC/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和~ 10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " V/cm量级。这些结果表明PZT铁电薄膜具有良好的铁电特性，可以用来制备稳定、性能优异的自驱动光电探测器。另外，" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "d所示PZT铁电薄膜的剩余极化强度和矫顽电场具有不对称性的特征，我们认为这是FTO/PZT和Au/PZT界面的不对称性造成的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "基于上述优异铁电特性的PZT铁电薄膜，我们进一步制备了Au/PZT/FTO结构自驱动紫外光电探测器，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "b所示。其中，Au电极的厚度为10 nm，其在300 nm - 350 nm波长范围内具有较高的光学透射系数（透射率大于50%）。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": " （a）显示的是探测器在黑暗和325 nm光照条件下的I-V曲线结果。为了避免PZT铁电薄膜在I-V测试中出现极化翻转现象，在I-V测试过程中将电压范围设定为[-1 V, +1 V]。由" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "a可以看出PZT铁电薄膜基光电探测器具有非常低的暗电流。具体地，在-1.0 V、0 V和1.0 V偏压下，探测器的暗电流分别仅为336 pA、42.8 pA和74 pA，这进一步说明了PZT铁电薄膜具有质量高、缺陷浓度低的特性。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）PZT铁电薄膜基自驱动光电探测器在黑暗和325 nm光照条件下的伏安特性曲线。（b）325 nm脉冲光照下时间分辨的光电流曲线。其中光强度为180 μW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，偏压为0 V。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "（a）Current-voltage curves of photodetectors captured in dark and under 325 nm illumination.（b）Time-resolved current-voltage curve under 325 nm illumination switched on and off. The light power density is 180 μW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ". The bias voltage is 0 V." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597104&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597106&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597105&type=", "width": "136.45399475", "height": "54.71599960", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "特别地，在325 nm（光强为 ~ 180 μW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）光照下，探测器的电流迅速增加。如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "a所示，探测器I-V曲线显示出典型的光伏效应特征，其短路电流为13.4 nA。这说明PZT铁电薄膜基光电探测器具有自驱动光探测的特性。在0 V偏压下，探测器的开关比（定义为光电流与暗电流之比）为313；而在-1.0 V偏压下，探测器的开关比为77。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "b显示的是探测器的光电流-时间曲线。从图中可以看出探测器具有明显的紫外光探测的性能，其上升时间和下降时间分别为53 ms和78 ms。其中，上升时间和下降时间分别定义为光照强度发生变化时光电流从峰值的10%增加至90%和光电流从峰值的90%降低至10%所经历的时间。这个结果比PN结和肖特基结自驱动光电探测器要慢，但与其他铁电材料（如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "）和无机氧化物（如ZnO和Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）光电探测器相当" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": 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"name": "text", "data": "11" } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "本文" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597108&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597107&type=", "width": "162.79998779", "height": "46.89918518", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "a显示的是探测器在0 V偏压下其光电流与入射光强度之间的关系。可以看出探测器光电流随着光强度的增加而增加。采用公式：" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597110&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597109&type=", "width": "12.53066730", "height": "4.06400013", "fontsize": "" } } } ] }, { "name": "text", "data": "（其中" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "为光电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "为常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "为入射光强度，" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "为功率系数）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "对光电流-光强度曲线进行拟合，得到功率系数" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "高达0.92（如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "a插图所示）。这表明大部分光生载流子贡献了自驱动光电流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这是由PZT铁电薄膜内较强的铁电极化场（如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "d所示）造成的。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）不同光照强度下PZT铁电薄膜基自驱动光电探测器的光电流-时间曲线。插图是不同光照强度下的光电流值。（b）不同光照强度下PZT铁电薄膜基自驱动光电探测器的上升时间和下降时间。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "（a）Photocurrent-time curves captured under different light power. The inset shows the light power density dependence of photocurrent.（b）Rising and falling time as a function of light power." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597111&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597113&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597112&type=", "width": "145.78500366", "height": "57.89099884", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "进一步分析" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "a所示的光电流-光强度曲线结果，发现探测器的上升时间和下降时间均与入射光强度有关。如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "b所示，随着光强度的增加，探测器的上升时间和下降时间均呈现下降的趋势。我们认为这是与陷阱诱导的载流子捕获和释放及陷阱的填充效应有关，具体论述如下：在弱光照射下，绝大部分光生载流子被陷阱捕获。因此，探测器的上升时间和下降时间受到载流子的捕获和释放过程制约。然而，当强光照射时，由于有限的陷阱浓度，因而只有少部分载流子被陷阱捕获。在这种情况下，器件的上升时间和下降时间主要与PZT铁电薄膜内载流子的渡越时间有关。因此，为了提高PZT铁电薄膜基自驱动光电探测器的响应速度，有必要在陷阱钝化或抑制方面开展更多的研究工作。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "采用光响应度和比探测率参数来进一步研究和评价PZT铁电薄膜基自驱动光电探测器的性能，结果如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。其中，光响应度（" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "）和比探测率（" }, { "name": "italic", "data": [ { "name": "text", "data": "D*" } ] }, { "name": "text", "data": "）分别由公式（1）和（2）计算得到：" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] } ] }, { "name": "dispformula", "data": { "label": [], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597115&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597114&type=", "width": "56.81133270", "height": "8.55133343", "fontsize": "" } } } ], "id": "DF1" } }, { "name": "dispformula", "data": { "label": [], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597117&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597116&type=", "width": "46.39733505", "height": "9.65200043", "fontsize": "" } } } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "式中，Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "为光电流与暗电流的差值，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "为入射光功率，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "P" } ] } ] }, { "name": "text", "data": "为光电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] } ] }, { "name": "text", "data": "为暗电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "为入射光功率密度，" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "为顶部Au电极面积（0.071 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "c），" }, { "name": "italic", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "为电子的电荷量。其中，探测器在不同波长光照下的光电流结果如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "a所示。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "b显示的是探测器的光响应度和比探测率的结果。从图中可以看出该器件具有明显的紫外光探测的性能，在0 V偏压下，器件的峰值光响应度为0.072A/W，峰位位于315 nm，截止波长（定义为峰值光响应度1/e时的波长）为367 nm。与吸收光谱（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "c）相比，探测器光响应度有一定的蓝移，这可能是顶部Au电极的光学吸收造成的。另外，该器件紫外-可见光抑制比（R" }, { "name": "sub", "data": [ { "name": "text", "data": "315nm" } ] }, { "name": "text", "data": "/R" }, { "name": "sub", "data": [ { "name": "text", "data": "450nm" } ] }, { "name": "text", "data": "）为3.8 × 10" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，说明PZT铁电薄膜基自驱动光电探测器具有高效的紫外光探测和屏蔽可见光的能力。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a）不同波长光照下PZT铁电薄膜基自驱动光电探测器的光电流及相应的光强度。（b）探测器的光响应度和探测率曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "（a）Wavelength dependence of photocurrent and the corresponding light power.（b）Responsivity and detectivity curves." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597118&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597120&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597119&type=", "width": "136.44557190", "height": "45.20497894", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "进一步地，利用式（2）计算得到探测器的比探测率为4.35 × 10" }, { "name": "sup", "data": [ { "name": "text", "data": "11" } ] }, { "name": "text", "data": " Jones（cm Hz" }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": " W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "），说明该器件紫外光探测的性能优于已报道的同类型光电探测器。" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "总结了近年来已报道的基于铁电材料的自驱动光电探测器的光探测性能，可以看出本文报道的PZT铁电薄膜基自驱动光电探测器具有更高的光响应度和比探测率。我们认为顶部Au电极较高的光学透射率、PZT铁电薄膜高的光学吸收系数和强的铁电极化场等因素是获得上述优异光探测性能的主要原因。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "上述实验结果表明PZT铁电薄膜基光电探测器具有优异的自驱动紫外光探测的性能。为了进一步说明Au/PZT/FTO结构光电探测器的自驱动光探测的机理，我们绘制该器件的能带图加以说明，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。由于FTO电阻率很低（" }, { "name": "text", "data": "<" }, { "name": "text", "data": "10 Ω/sq），在这里我们将其作金属材质处理。因为自发极化，在PZT铁电薄膜表面形成了显著的极化电荷，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "a所示的“+”和“-”（其中“+”和“-”分别为正电荷和负电荷）。在极化电荷的作用下，PZT铁电薄膜表面附近形成了能带弯曲，并在PZT铁电薄膜内形成较强的去极化场（" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DP" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "a所示）。当光子能量高于PZT禁带宽度的紫外光照射时，PZT铁电薄膜内产生的电子和空穴在去极化场的作用下发生定向运动，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "b所示。其中，电子向FTO一侧运动，空穴向Au电极一侧运动，二者的定向运动形成了光电流。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "Au/PZT/FTO结构器件自驱动光探测的机理。（a）PZT铁电薄膜内极化电荷和去极化场（" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DP" } ] }, { "name": "text", "data": "）示意图。图中+和-分别为正电荷和负电荷。（b）Au/PZT/FTO结构光电探测器能带图及光电流的产生过程。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Mechanisms of self-powered photodetection in the Au/PZT/FTO structured device.（a）Polarization charge and depolarization electric field（" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "DP" } ] }, { "name": "text", "data": "）in the ferroelectric PZT thin films. + and – are denoted as positive and negative charge， respectively.（b）Energy band diagram and mechanism of self-powered photocurrent." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597121&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597123&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36597122&type=", "width": "43.55830002", "height": "45.66889191", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结 论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文研究了PZT铁电薄膜基自驱动紫外光电探测器的光探测性能。结果表明，溶胶-凝胶方法制备的PZT薄膜具有质量高、缺陷浓度低、铁电特性优良的特性。进一步地，构建了性能优异的Au/PZT/FTO结构自驱动光电探测器。具体地，在0 V偏压下，探测器的光响应度和比探测率分别为0.072 A/W和4.35×10" }, { "name": "sup", "data": [ { "name": "text", "data": "11" } ] }, { "name": "text", "data": " Jones，优于已报道的同类型光电探测器。本文的研究结果将为研制简单器件结构的高性能自驱动光电探测器提供重要的借鉴。" } ] } ] } ], "footnote": [], 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