基于弱取向外延生长多晶薄膜的OLED研究进展

刘奕君; 朱峰; 闫东航

doi:10.37188/CJL.20220315

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基于弱取向外延生长多晶薄膜的OLED研究进展

特邀报告 | 更新时间：2023-02-16

- 基于弱取向外延生长多晶薄膜的OLED研究进展增强出版
- Research Progresses on Polycrystalline Thin-film Organic Light-emitting Diodes Based on Weak-epitaxy-growth Technique
- 发光学报 2023年 44卷第1期 (2023)
- 作者机构：
  
  中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,吉林,长春,130022;中国科学技术大学应用化学与工程学院,安徽,合肥,230026
- 作者简介：
- 基金信息：
  
  科技部重点研发计划(2017YFA0204704)
- DOI：10.37188/CJL.20220315 中图分类号： TN312.8
- 纸质出版日期：2023-01-05，
  
  收稿日期：2022-08-30，
  
  修回日期：2022-09-13，
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引用本文
刘奕君,朱峰,闫东航.基于弱取向外延生长多晶薄膜的OLED研究进展[J].发光学报,2023,44(01):129-139.

LIU Yijun,ZHU Feng,YAN Donghang.Research Progresses on Polycrystalline Thin-film Organic Light-emitting Diodes Based on Weak-epitaxy-growth Technique[J].Chinese Journal of Luminescence,2023,44(01):129-139.
刘奕君,朱峰,闫东航.基于弱取向外延生长多晶薄膜的OLED研究进展[J].发光学报,2023,44(01):129-139. DOI： 10.37188/CJL.20220315.

LIU Yijun,ZHU Feng,YAN Donghang.Research Progresses on Polycrystalline Thin-film Organic Light-emitting Diodes Based on Weak-epitaxy-growth Technique[J].Chinese Journal of Luminescence,2023,44(01):129-139. DOI： 10.37188/CJL.20220315.

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These properties result in good thermal stability， chemical stability and high carrier mobility compared to organic amorphous materials， making organic crystalline materials have great potential in developing high-performance OLEDs. This paper reviews the recent progress on crystalline thin-film OLEDs （C-OLEDs） based on weak-epitaxy-growth（WEG） technique. From the initial single crystalline layer green-emission device to multi-layer doped deep-blue-emission device， C-OLEDs have proved the crystalline organic semiconductor route is capable of realizing efficient light emitting， and the devices have achieved superior characteristics of low turn-on voltage， low operating voltage， high photon output， high power efficiency and low Joule heat loss." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "有机发光二极管" } ], [ { "name": "text", "data": "多晶薄膜" } ], [ { "name": "text", "data": "弱取向外延生长" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "organic light-emitting diodes" } ], [ { "name": "text", "data": "crystalline thin-films" } ], [ { "name": "text", "data": "weak-epitaxy-growth" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "有机发光二极管（Organic light-emitting diodes, OLED）具有自发光、轻薄、柔性、节能、响应快、色域广等优势，是一种极具竞争力的新型显示技术。有机电致发光现象可追溯到20世纪60年代，1963年，Pope等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "首次在单晶蒽及其掺杂体系中观察到有机电致发光现象。由于蒽单晶的厚度达到几十微米，只有当驱动电压施加到400 V时才能观察到微弱的蓝光。有机单晶制备方法和单晶发光所需的高工作电压使得早期的有机单晶发光器件没有得到工业界的密切关注。直到1987年，美国科达实验室的 Tang和VanSlyke" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发明了以有机无定形（非晶态）材料8-羟基喹啉铝（Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）为发光层的新型三明治器件结构，器件表现出低电压、高亮度的特征，其功率效率和外量子效率分别达到1.5 lm·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和1.0 %，引起了学术界和工业界的广泛兴趣。随后非晶材料以其成膜性好、利于大面积加工的特点成为极具竞争力的显示技术方案。相对于非晶态材料，有机晶态材料分子空间排布规则有序，具有很好的热稳定性和化学稳定性，具有远高于非晶材料的载流子迁移率。这些优良的特性使有机晶态材料在光电器件领域具有巨大的应用潜力，是先进光电器件的优良载体。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "目前基于有机晶态材料的发光器件工作主要集中在单晶OLED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": ", " }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R3", "R4", "R5", "R6", "R7", "R8", "R9", "R10" ], "text": "3-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、多晶薄膜OLED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } } ], "rid": [ "R11", "R12", "R13", "R14", "R15", "R16" ], "text": "11-16", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、有机发光晶体管（Organic light-emitting transistors, OLET）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R17", "R18", "R19", "R20", "R21" ], "text": "17-21", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、有机光电泵浦激光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } } ], "rid": [ "R22", "R23", "R24" ], "text": "22-24", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和光电性质研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } } ], "rid": [ "R25", "R26", "R27", "R28", "R29", "R30", "R31", "R32", "R33" ], "text": "25-33", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等。弱取向外延生长（Weak-epitaxy-growth, WEG）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } } ], "rid": [ "R34", "R35", "R36" ], "text": "34-36", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "是2007年闫东航研究组提出的一种基于真空物理气相沉积技术制备有机多晶薄膜的方法。如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示，WEG是在有机半导体和非晶衬底（如SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、导电聚合物等）之间引入一层能够层状生长的有机棒状小分子诱导层（如六联苯（" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P）等）,使半导体层分子受诱导作用进行取向生长。传统有机外延生长早期借鉴无机分子束外延，使用单晶衬底在低温和室温下进行，衬底与分子间的相互作用强于分子与分子间的相互作用。WEG则是在非晶衬底高温条件下进行分子生长，外延层分子与基底之间的相互作用小于分子与分子之间的作用力，即“弱”外延，使得沉积的有机分子在服从“扩散-聚集限制”生长规律的同时受诱导层作用进行取向生长，形成大面积、连续、高质量的多晶有机薄膜。外延层需要满足与诱导层匹配的要求，实现有晶格匹配关系的有公度外延或沟道匹配关系的无公度外延。WEG方法是一种真空沉积技术，可以精确控制薄膜生长的厚度，形成具有分子级平滑度的多晶薄膜，并且可以直接连接后续的电极蒸镀和器件集成。所以，WEG与现有的OLED工业制备方法和高真空蒸镀设备有很好的兼容性，利于实现工业级大面积制备，利用WEG方法制备的多晶薄膜OLED有望发展成为器件技术。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "分子弱取向外延生长示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } } ], "rid": [ "R34", "R35", "R36" ], "text": "34-36", "type": "bibr" } }, { "name": "text", "data": "］" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Schematic of weak-epitaxy-growth" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } } ], "rid": [ "R34", "R35", "R36" ], "text": "34-36", "type": "bibr" } }, { "name": "text", "data": "］" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942145&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942150&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942149&type=", "width": "106.17686462", "height": "56.58526611", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "基于WEG方法，不同光色、不同器件结构的多晶薄膜OLED在近几年得到系列探索，该类器件不但实现了有效发光，而且展现出低工作电压、高光子输出等优越特性。本文聚焦基于WEG方法制备的多晶有机薄膜OLED （Crystalline OLED, C-OLED），总结了WEG C-OLED的早期工作和研究进展，包括WEG C-OLED发光路线的器件结构设计、器件性能优化、器件评估方法等。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　WEG C⁃OLED的器件结构发展" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "8-羟基喹啉铝（Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）是一种经典的绿色荧光发射有机材料。Yang等利用WEG方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "以" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P为诱导层（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a））成功外延生长了Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "高质量连续多晶薄膜（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）~（e）），并基于该多晶薄膜首次制备了WEG C-OLED器件。器件采用简单的单发光层结构，结构如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（g）所示，在ITO/PEDOT∶PSS（氧化铟锡/聚（3，4-乙烯二氧噻吩）-聚苯乙烯磺酸）导电基底上外延生长Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "多晶薄膜后，直接蒸镀LiF和Al电极形成完整的OLED器件。这样保证了有机多晶薄膜与两个电极之间的有效接触，可以实现载流子均匀而高效的注入。" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P诱导层与Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的HOMO（Highest occupied molecular orbital，最高占据分子轨道）能级匹配良好，有利于空穴传输。器件启亮电压仅为2.8 V，归因于对晶体发光层厚度的精确控制以及有效的载流子注入。如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（h）、（i）所示，器件在518 nm处表现出稳定均匀的面发光，外量子效率（External quantum efficiency, EQE）最高达到1.44%，实现了有效的绿色发光。更重要的是，与同时制备的相同结构的非晶OLED（Amorphous OLED, A-OLED）相比，器件" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "（亮度衰减到一半的时间）提高了两个量级（" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（j）），表现出有机晶态材料在提升OLED稳定性方面的潜在优势。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）~（b）" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P和6 nm " }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P/80 nm Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "多晶薄膜的AFM图；（c）6 nm " }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P/150 nm Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "多晶薄膜的扫描电子显微镜（scanning electron microscope，SEM）横截图；（d）多晶薄膜的面外X射线衍射（X-ray diffraction，XRD）图；（e）多晶薄膜的选区电子衍射（selected area electron diffraction，SAED）图；（f）" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P/Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "多晶薄膜的堆叠模式示意图；（g）C-OLED的材料分子结构式和能级图；（h）不同电压下多晶薄膜OLED的电致发光光谱；（i）多晶薄膜OLED的EQE随亮度变化，插图为Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " C-OLED发光状态的照片；（j）不同电流密度下非晶器件和多晶薄膜器件的亮度衰减曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "（a）-（b）Atomic force microscope（AFM） images of " }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P and 6 nm " }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P/80 nm Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " crystalline thin film. （c）Scanning electron microscope （SEM） image of 6 nm " }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P/80 nm Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " crystalline thin film. （d）Out-of-plane XRD patterns of crystalline thin films. （e）Selected area electron diffraction（SAED） patterns of the crystalline film. （f）Schematic packing diagram of the " }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "-6P/Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " crystalline film. （g）Molecular structures and energy band diagram of the C-OLED. （h）Electroluminescence（EL） spectra of Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " C-OLED. （i）EQE as a function of luminance. The inset shows a photograph of an operating Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " C-OLED. （j）Time-dependent luminance evolutions of amorphous OLEDs and C-OLEDs" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942155&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942164&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942160&type=", "width": "161.72985840", "height": "69.44505310", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "虽然单层C-OLED器件的制备过程简单，但往往面临着载流子传输不平衡、载流子复合区域靠近电极、易发生激子猝灭等问题，而多层结构可以有效克服这些困难" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如前所述，WEG方法可以逐层生长不同晶体材料，并保证晶体发光部分与电极的良好接触，因此适合用来制备多层结构的多晶薄膜器件。如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）~（d）所示，在WEG Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件中引入了AlmND" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶态薄膜层后，AlmND" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "与Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "可以进行良好的异质外延交替生长，形成高质量大面积连续的外延多晶薄膜，并制备C-OLED发光器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。AlmND" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "多晶薄膜的最低未占据分子轨道（Lowest unoccupied molecular orbital, LUMO）能级可以在晶态器件中形成一个电子势阱来减弱电子传输能力（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（e）），进而改善Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶态薄膜中的电子空穴平衡传输。更重要的是，AlmND" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "晶态薄膜层的加入可以将激子限制在远离电极的区域以减少激子的猝灭。优化后的晶态器件电流效率为7.80 cd·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，EQE达到2.41%（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（f）~（i）），器件表现出均匀明亮的绿光发射，说明多层晶态薄膜结构能够有效调节器件的载流子传输过程，实现电子空穴的相对平衡传输。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）~（d）弱取向外延生长Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "多晶薄膜的AFM图；（e）多层C-OLED中的载流子和激子示意图；（f）C-OLED的电致发光光谱，插图为工作状态下多晶薄膜器件的照片；（g）C-OLED的" }, { "name": "italic", "data": [ { "name": "text", "data": "J‐V‐L" } ] }, { "name": "text", "data": "性能特征；（h）C-OLED的电流效率-亮度曲线和功率效率-亮度曲线；（i）C-OLED的EQE-亮度曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "（a）-（d）Atomic force microscope（AFM） images of WEG Alq" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " crystalline thin films.（e）Schematic diagram of carriers and excitons’ processes in the multi-layer C-OLED.（f）Electroluminescence spectra of C-OLED. The inset shows photograph of an operating multi-layer crystalline OLED.（g）" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": " characteristics of C-OLED.（h）Current efficiency（CE） and power efficiency（PE） of C-OLED as a function of luminance.（i）EQE of C-OLED as a function of luminance" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "] " } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942168&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942175&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942172&type=", "width": "160.51174927", "height": "106.30418396", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　WEG 深蓝光OLED及器件结构优化" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "由于蓝光材料的宽带隙特征，蓝光OLED的性能（效率、稳定性等）通常不如红光和绿光OLED，因此开发高效蓝光OLED，尤其是深蓝光OLED是发展OLED显示技术的紧迫问题。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2020年，Liu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "设计了基于蓝光" }, { "name": "italic", "data": [ { "name": "text", "data": "ρ" } ] }, { "name": "text", "data": "-DPPI荧光分子（" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）、（b））的多层结构WEG C-OLED器件。该器件采用BP1T作为诱导层，BP1T在硅片和ITO/PEDOT∶PSS上都呈现良好的层状生长规律。除此之外，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（c）、（d）所示，它具有合适的HOMO能级和良好的空穴传输性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，不仅可以诱导后续多晶薄膜生长，更能作为空穴传输层来提升空穴注入效率。如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（e）~（j）所示，" }, { "name": "italic", "data": [ { "name": "text", "data": "ρ" } ] }, { "name": "text", "data": "-DPPI分子在诱导层上生长出高质量的多晶薄膜。相比于非晶的" }, { "name": "italic", "data": [ { "name": "text", "data": "ρ" } ] }, { "name": "text", "data": "-DPPI，多晶薄膜OLED表现出窄化的光谱和蓝移现象，有利于制备深蓝光器件。电子传输层和空穴传输层的存在可以解决正负电极的功函与有机材料载流子能级的双向匹配问题，使得电子和空穴的注入更加高效。类似地，基于" }, { "name": "italic", "data": [ { "name": "text", "data": "ρ" } ] }, { "name": "text", "data": "-DPPI的 WEG C-OLED器件额外引入了电子传输层以解决负电极的费米能级与有机材料LUMO的匹配问题，使得电子注入更加高效。由于WEG多晶薄膜是在高温下直接蒸镀而成，器件能够直接在生长完多晶薄膜后进行电子传输层的蒸镀。如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（k）~（n）所示，该多晶薄膜器件表现出明亮的深蓝光发射，国际照明委员会（Commission Internationale de l'Eclairage, CIE）色坐标约为（0.15, 0.11），接近标准蓝光。得益于合适的能级设计构建，器件的启亮电压低至2.80 V，实现了高效的载流子注入，同时器件呈现出低驱动电压的特征。器件最大亮度约为15 000 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "，最大电流效率为4.5 cd·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，功率效率为4.1 lm·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，EQE为4.1%。即使在1 000 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "亮度下，电流效率、功率效率和EQE依然可以保持在4.5 cd·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "、3.4 lm·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和3.9%。该工作说明多晶薄膜作为发光层可以实现有效的蓝光发射。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）" }, { "name": "italic", "data": [ { "name": "text", "data": "ρ" } ] }, { "name": "text", "data": "-DPPI分子结构式和分子构象；（b）" }, { "name": "italic", "data": [ { "name": "text", "data": "ρ" } ] }, { "name": "text", "data": "-DPPI的晶体堆积形式；（c）C-OLED的器件结构示意图；（d）C-OLED的器件能级示意图；（e）6.6 nm厚的BP1T多晶薄膜AFM图；（f）~（j）不同厚度的" }, { "name": "italic", "data": [ { "name": "text", "data": "ρ" } ] }, { "name": "text", "data": "-DPPI多晶薄膜AFM图；（k）不同电压下C-OLED的电致光谱，插图为工作状态下多晶薄膜C-OLED器件的照片，照片中的样品尺寸为30 mm " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

\times

\times

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942187&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942185&type=", "width": "1.52400005", "height": "2.28600001", "fontsize": "" } } } ] }, { "name": "text", "data": " 30 mm.（l）Current density" }, { "name": "italic", "data": [ { "name": "text", "data": "⁃" } ] }, { "name": "text", "data": "voltage" }, { "name": "italic", "data": [ { "name": "text", "data": "⁃" } ] }, { "name": "text", "data": "luminance（" }, { "name": "italic", "data": [ { "name": "text", "data": "J⁃V⁃L" } ] }, { "name": "text", "data": "） characteristics of C-OLED.（m）Current efficiency and power efficiency " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " luminance curves of C-OLED.（n）EQE-luminance of C-OLED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942190&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942197&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942194&type=", "width": "161.34597778", "height": "102.72684479", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　掺杂WEG 深蓝光OLED" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "主客体掺杂体系可以有效提高OLED器件的性能以及调控发光器件的光色，是半导体科学技术与非晶薄膜OLED器件发展中形成的重要方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } } ], "rid": [ "R38", "R39" ], "text": "38-39", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。将掺杂方法引入晶态OLED器件的制备能大幅拓宽多晶薄膜路线的适用范围，提高发光性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "Xin等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用WEG方法制备了一种基于氟代菲并咪唑化合物2FPPICz" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "的多晶薄膜。如" }, { "name": "xref", "data": { "text": "图 5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图 5" } ] } }, { "name": "text", "data": "（a）~（b），在BP1T诱导层上，2FPPICz可以外延生长出连续的多晶薄膜，单个BP1T晶畴内生长的2FPPICz晶条只有单一取向，不同晶畴之间的2FPPICz条状晶体可以实现平滑的融合、连接。XRD表征结果（" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（d））证明了外延薄膜的结晶性。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）说明在经过PEDOT∶PSS修饰的ITO基底上，2FPPICz外延晶态薄膜即使在近1 μm的厚度下依然可以保持充分融合连接的晶条形状。如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（f）、（g）所示，经过飞行时间法（Time of light, TOF）测试，2FPPICz多晶薄膜的空穴和电子迁移率分别约为0.10 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和0.015 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，远高于一般非晶态薄膜的迁移率（10" }, { "name": "sup", "data": [ { "name": "text", "data": "-8" } ] }, { "name": "text", "data": "~10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）。高迁移率能够促进载流子运输过程，提高激子复合效率，进而带来高电导率，降低整个器件的串联电阻和驱动电压，有利于构筑高效OLED器件。如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（a）~（e）所示，基于2FPPICz的多晶薄膜OLED表现出明亮均匀的深蓝光发射，CIE坐标为（0.162，0.029），最大EQE为1.6%。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a）40 nm 2FPPICz外延多晶薄膜的AFM图；（b）40 nm掺杂外延多晶薄膜的AFM图；（c）约0.6 μm 厚2FPPICz外延多晶薄膜的SEM横截图；（d）BP1T、外延2FPPICz和掺杂多晶2FPPICz薄膜的面外XRD图；（e）掺杂外延多晶薄膜示意图；（f）空穴迁移率对电场强度的依赖关系曲线；（g）电子迁移率对电场强度的依赖关系曲线" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "（a）AFM images of the 40 nm WEG 2FPPICz crystalline thin films. （b）AFM images of the doped crystalline thin films.（c）Scanning electron microscope （SEM） image of a cross-section profile of the 0.6 μm thick 2FPPICz crystalline thin film.（d）Out-of-plane XRD patterns of BP1T， WEG 2FPPICz， and doped WEG 2FPPICz crystalline thin films. （e）Schematic illustration of the doped WEG crystalline thin film. （f）Hole mobility plotted with respect to " }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": ". （g）Electron mobility plotted with respect to " }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "1/2［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942200&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942205&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942202&type=", "width": "164.00724792", "height": "98.39280701", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "（a）2FPPICz纯层多晶薄膜器件结构图；（b）C-OLED的电流密度-电压-亮度曲线；（c）C-OLED的亮度-电流密度曲线；（d）C-OLED的EQE-亮度曲线；（e）C-OLED在5.0 V下的归一化器件电致光谱，插图为1931CIE色坐标图" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "（a）Device structure of C-OLED based on non-doped 2FPPICz WEG crystalline thin film. （b）Voltage dependent of current density and luminance characteristics of C-OLED. （c）Luminance-current density characteristics of C-OLED. （d）EQE-Luminance-curves of C-OLED. （e）Normalized EL spectra of C-OLED at 5.0 V of C-OLED. The inset is CIE1931 chromaticity diagram" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942208&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942217&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942212&type=", "width": "161.94476318", "height": "81.70687866", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "如前所述，掺杂是非晶器件中常用的一种制备器件策略，引入合适的高效客体材料能够显著提升器件效率。2FPPIPCz材料的分子结构与2FPPICz类似，且具有更高的荧光量子产率，适合作为客体材料进行掺杂。高效率客体与深蓝光高迁移率主体的结合更有利于实现有效发光。由于利用WEG方法制备掺杂多晶薄膜只需要在制备过程中使不同材料共蒸发即可，因此选择的材料不受升华温度的限制，掺杂浓度也可以通过蒸发设备的晶振进行精确控制。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（d）描绘了掺杂薄膜和未掺杂薄膜的XRD曲线，二者的一致性说明在进行掺杂后，薄膜依然保持着高度有序的特征，掺杂并未改变薄膜的晶体结构。如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（a）~（d）所示，进行掺杂后，器件的最大亮度和EQE分别由1 100 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和1.6%上升到8 007 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和2.68%。器件呈现明亮的深蓝色发射，开启电压仅为3.0 V，即使在 1 000 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "亮度下驱动电压也仅为4.1 V，CIE色坐标为（0.158, 0.034），是深蓝光OLED中CIE" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "最小值之一。相比于传统的非晶OLED，该掺杂OLED具有更低的驱动电压。这说明WEG C-OLED可以实现主客体掺杂路线，为未来高效器件的制备打下了良好的基础。晶态有机材料的高迁移率一方面可以提高载流子输运效率，使得发光区的电子空穴可以快速复合形成激子；另一方面，高迁移率带来了高电导的优势，因此多晶薄膜器件大多表现出低启亮电压并且在低电压区亮度快速上升的特点。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "（a）C-OLED的电压-电流密度曲线（右）和电压-亮度曲线（左）；（b）C-OLED的电流密度-亮度曲线；（c）C-OLED的EQE-亮度曲线；（d）C-OLED和ITU-R BT.2020-标准蓝光的色坐标图以及其色坐标值，插图为驱动电压5.0 V时的电致发光光谱" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "（a）Voltage-dependent current density （right） and luminance （left） characteristics of C-OLED. （b）Current-density-dependent luminance characteristics of C-OLED. （c）EQE-luminance curves of C-OLED. （d）The CIE1931 chromaticity diagram， including the chromaticity coordinates of the EL spectrum from the doped C-OLED and ITU-R BT.2020-Standard， the inset is the EL spectra at 5.0 V" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942220&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942226&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942222&type=", "width": "131.55755615", "height": "87.57518005", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "5　C⁃OLED的光输出特征" } ], "level": "1", "id": "s5" } }, { "name": "p", "data": [ { "name": "text", "data": "晶体的高迁移率会降低器件的串联电阻，因而带来低驱动电压以及低焦耳热损耗等优势。目前非晶OLED的通常评价参数并不能完全反映多晶薄膜器件的这些特征。为了能够更客观地描述多晶薄膜器件的性能，Xin等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "计算了多晶薄膜器件的一系列电学参数如电压差、电导、输入功率和焦耳热等。计算结果表明，相对于目前报道的基于传统荧光、热活化延迟荧光（Thermal activated delayed fluorescence, TADF）、三线态-三线态湮灭（Triplet-triplet annihilation, TTA）和磷光材料的相似光色的非晶器件（CIE" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "y" } ] } ] }, { "name": "text", "data": "≤ 0.05）来说，掺杂C-OLED器件具有最高的发光亮度（" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "（a））和最小的电压差（∆" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "，定义为亮度为1 000 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "所对应的驱动电压差，表征发光器件平均启亮速度）。同时，该类C-OLED器件具有最高的微分电导和最低的串联电阻焦耳热比例，说明晶体的高迁移率特性能够减小焦耳热带来的能量损失，降低器件的驱动电压和能量损耗。同样地，多晶薄膜器件更高的斜率2（Slope2，当亮度为1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "时所对应的电压下的瞬时斜率）和Slope3（亮度为1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和100 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "时所对应的电压下的平均斜率）数值，说明其具有超越其他同光色的非晶器件的载流子迁移率和更快的开启速度。单位时间、单位面积发射的光子数（" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

N_{p}^{o u t}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942233&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942229&type=", "width": "5.41866684", "height": "4.06400013", "fontsize": "" } } } ] }, { "name": "text", "data": "）是评价LED等发光器件光输出能力的一项重要参数，根据EQE（" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": "）和电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "的定义（公式（" }, { "name": "xref", "data": { "text": "1", "type": "disp-formula", "rid": "DF1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "）、（" }, { "name": "xref", "data": { "text": "2", "type": "disp-formula", "rid": "DF2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "））可以推导出发射的光子数（" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

N_{p}^{o u t}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942238&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942236&type=", "width": "5.41866684", "height": "4.06400013", "fontsize": "" } } } ] }, { "name": "text", "data": "）计算公式（" }, { "name": "xref", "data": { "text": "公式（3）", "type": "disp-formula", "rid": "DF3", "data": [ { "name": "text", "data": "公式（3）" } ] } }, { "name": "text", "data": "）：" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "（a）掺杂C-OLED和已报道的相似色纯度深蓝光OLED的电压-亮度曲线对比；（b）掺杂C-OLED和已报道的相似色纯度深蓝光OLED的电压-电流密度曲线对比；（c）掺杂C-OLED和已报道的相似色纯度深蓝光OLED的电压-电流密度半对数曲线对比；（d）掺杂C-OLED和已报道的相似色纯度典型深蓝光OLED的电压" }, { "name": "bold", "data": [ { "name": "text", "data": "⁃" } ] }, { "name": "text", "data": "光子数曲线（" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "text", "data": "）对比，包括传统荧光、磷光材料、TADF、TTA和铟镓氮（InGaN）/氮化镓（GaN）无机LED的深蓝光OLED。Slope 2/3：定义为lg" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "的关系图中当亮度为1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "时所对应的电压下的瞬时斜率/当亮度为 1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和100 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "时所对应的电压下的平均斜率；Slope 4/5：定义为lg" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "（" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "text", "data": "，单位时间单位面积内OLED所发射出的光子数）的关系图中当亮度为1 cd m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "时所对应的电压下的瞬时斜率/当亮度为 1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "和100 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "时所对应的电压下的平均斜率。所有这些用于比较的数据是从相应参考文献的图中提取出来的" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "（a）A comparison of voltage（" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "）-dependent luminance between doped C-OLED and reported deep-blue OLEDs with similar color purity. （b）A comparison of voltage（" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "）-dependent current density（" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "） between doped C-OLED and reported deep-blue OLEDs with similar color purity. An inorganic LED based on InGaN/GaN is also plotted. ∆" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " = " }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": " （1 000 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "）-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "（1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "）. Slope 1（mS·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "）： defined as the instantaneous slope of " }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " curves at 1 000 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ". （c）A comparison of voltage-dependent semi-log current density between doped C-OLED and reported deep-blue OLEDs. （d）A comparison of voltage-dependent semi-log emitted photons（" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "text", "data": "） between doped C-OLED and reported deep-blue OLEDs based on typical fluorescent and phosphorescent materials， TADF， TTA， and InGaN/GaN LED. Slope 2/3： defined as the instantaneous slope of the lg" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " curve at a voltage relating to about 1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " （Slope 2）； and the average slope at a voltage relating to about 1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " to 100 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " （Slope 3）. Slope 4/5： defined as the instantaneous slope of the lg" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " curve at a voltage relating to about 1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "（Slope 4）； and the average slope at a voltage relating to about 1 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2 " } ] }, { "name": "text", "data": "to 100 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " （Slope 5）. All reference data for comparison are extracted from the corresponding literature" }, { "name": "sup", "data": [ { "name": "text", "data": "［" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942244&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942252&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942248&type=", "width": "159.30587769", "height": "106.22253418", "fontsize": "" } ] } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "

η_{E Q E} = \frac{N_{p}^{o u t}}{N_{e}^{i n}}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942260&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942255&type=", "width": "16.67933464", "height": "8.89000034", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF1" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（2）" } ], "data": [ { "name": "math", "data": { "math": "

I = \frac{Q}{t} = \frac{N_{e}^{i n} e}{t}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942271&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942266&type=", "width": "20.48933220", "height": "7.61999989", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF2" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（3）" } ], "data": [ { "name": "math", "data": { "math": "

N_{p}^{o u t} = η_{E Q E} \times \frac{J}{e}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942279&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942274&type=", "width": "22.86000061", "height": "7.28133297", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF3" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

N_{e}^{i n}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942288&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942284&type=", "width": "4.57200003", "height": "4.06400013", "fontsize": "" } } } ] }, { "name": "text", "data": "为注入的电子数，" }, { "name": "italic", "data": [ { "name": "text", "data": "Q" } ] }, { "name": "text", "data": "为电荷量，" }, { "name": "italic", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "为自由电荷的电量，" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "为时间，" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "为电流密度。人眼对不同颜色的光的灵敏度不同，而且具有不同色坐标数值的光的亮度也不同，参数" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

N_{p}^{o u t}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942297&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942293&type=", "width": "5.41866684", "height": "4.06400013", "fontsize": "" } } } ] }, { "name": "text", "data": "可以排除人眼视觉函数对不同颜色光带来的差异，评估具有不同色纯度的OLED的发光能力。如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "（d）所示，在相同的驱动电压下，掺杂的C-OLED具有最大的" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

N_{p}^{o u t}

", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942305&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39942300&type=", "width": "5.41866684", "height": "4.06400013", "fontsize": "" } } } ] }, { "name": "text", "data": "，远高于其他基于传统荧光、TADF、TTA和磷光材料的非晶器件的" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "

N_{p}^{o u t}

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