Restraining Lateral Lasing Invertical External Cavity Surface Emitting Laser with Large Mismatch Between Gain and Cavity Mode Enhanced Publication

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Fine Mechanics and Physics， Chinese Academy of Sciences， Changchun 130033， China", "data": [ { "name": "text", "data": "State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences， Changchun 130033， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院大学， 北京　100049", "data": [ { "name": "text", "data": "中国科学院大学， 北京　100049" } ] }, { "lang": "en", "label": "2", "text": "University of Chinese Academy of Sciences， Beijing 100049， China", "data": [ { "name": "text", "data": "University of Chinese Academy of Sciences， Beijing 100049， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "垂直外腔面发射激光器（Vertical external cavity surface emitting laser，VECSEL）的侧向激射是制约其高性能工作的关键。我们设计了室温下量子阱增益峰与表面腔模大失配（30 nm）的增益芯片结构，并证实该结构可以有效抑制泵浦功率增加时VECSEL的侧向激射增强问题。增益芯片基底温度为20 ℃时，VECSEL正向激射波长位于980 nm，侧向激射波长位于950 nm，当泵浦功率逐步增加时，侧向激射强度随着正向激射的出现而迅速降低。这是因为激光正向激射时量子阱的受激辐射能级与正向激射激光模式匹配，正向激射的激光模式可以获取更高的模式增益，在与侧向模式的竞争中处于优势地位。当基底温度控制在0 ℃与10 ℃时，量子阱本征增益峰值与表面腔模失配度增大，此时VECSEL仍然表现出稳定的侧向激射抑制效果。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The lateral lasing of vertical external cavity surface emitting laser（VECSEL） is the key to restrict its high performance. We designed a gain chip structure with a large mismatch（30 nm） between the quantum well gain peak and the surface cavity mode at room temperature， and confirmed that this structure can effectively suppress the lateral lasing enhancement of VECSEL when the pump power increases. When the substrate temperature of the gain chip is 20 ℃， the longitudinal lasing wavelength of VECSEL is 980 nm and the lateral lasing wavelength is 950 nm. As the pump power increases gradually， the lateral lasing intensity decreases rapidly with the emergence of longitudinal lasing. This is because the stimulated radiation level of the quantum well matches the longitudinal lasing laser mode when the laser is longitudinal lasing. The longitudinal lasing laser mode can obtain higher mode gain and have an advantage in the competition with the lateral mode. When the substrate temperature is controlled at 0 ℃ and 10 ℃， the mismatch between the quantum well intrinsic gain peak and the surface cavity mode increases. At this time， VECSEL still shows a stable lateral lasing suppression effect." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "垂直外腔面发射激光器" } ], [ { "name": "text", "data": "侧向激射" } ], [ { "name": "text", "data": "增益失谐" } ], [ { "name": "text", "data": "模式竞争" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "vertical external cavity surface emitting lasers（VECSELs）" } ], [ { "name": "text", "data": "lateral lasing" } ], [ { "name": "text", "data": "gain detuning" } ], [ { "name": "text", "data": "mode competition" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "垂直外腔面发射半导体激光器（Vertical external cavity surface emitting laser,VECSEL）兼具半导体激光器和固体激光器的优点" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，可实现高功率和高光束质量的激光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R2", "R3" ], "text": "2-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，并具有灵活的外腔结构，在腔内插入光学元件可以实现激光的频率转换" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、锁模" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等功能；结合半导体材料能带工程技术，VECSEL可开发出极为丰富的波长覆盖范围，实现从可见光到近红外波段的激光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R6", "R7", "R8" ], "text": "6-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因而近年来VECSEL获得了广泛关注，在工业加工、医疗以及科研领域得到广泛应用，并成为半导体激光器的热点研究领域。光泵浦的高功率VECSEL主要利用高能量光子泵浦发光区，并产生大量载流子形成自发辐射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，通过外部腔镜形成腔内激光振荡，实现激光输出。由于半导体基底本身的自然解理特性，VECSEL增益芯片两侧解理面会形成一个天然的谐振腔，导致增益芯片自发辐射产生的光在横向易于形成激光振荡，也称为VECSEL的侧向激射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。采用较大泵浦光斑来提高输出时，侧向激射效应也会随之增强，这是因为增益芯片内的横向振荡也能得到更强的光增益" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。侧向激射会随着泵浦功率的增加而增强，不均匀地消耗有源区内的载流子，制约VECSEL正向激光输出性能，为此，国际上持续开展了VECSEL侧向激射的研究。Hessenius等深入研究了带隙的热位移效应对侧向激射的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Wang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研究了基于库伦屏蔽和带隙重整化效应的新模型，以此来分析发生侧向激射的原因。通过对VECSEL的外部结构进行调整，可以有效地控制其侧向激射情况，提升VECSEL的正面输出性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ",解决由于侧向激射引起的VECSEL阈值和效率衰减问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。减小解理面的光反馈是目前广泛采用的方法，Töpper等提出通过破坏解理面平整度减小侧向光振荡效应的方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，该方法对于解理面的破坏极易引起内部缺陷，导致增益芯片可靠性下降；Hessenius等提出在增益芯片侧面蒸镀光学透射膜的方式减弱侧向光振荡效应，实际增益芯片的减薄及衬底剥离过程中会在一定程度破坏侧向光学薄膜" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，使得光学膜作用有限。在侧面制备对光进行吸收损耗的吸收区也能有效抑制侧向光的激射" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但是吸收区的制备过程繁琐，工艺较为复杂。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "侧向激射对VECSEL的影响主要来自侧向激射模式与正向激射模式的模式竞争，由于侧向激射对光生载流子的严重消耗，使得正向激射激光很难获得增益芯片全部的光增益。本文在VECSEL增益芯片设计中采用了增益峰值与腔模大失谐的设计理念" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R18", "R19", "R20" ], "text": "18-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，增强垂直方向振荡模式的竞争优势，弱化侧向激射增益水平，从而实现抑制侧向激射的目的。本文首先介绍了VECSEL器件结构与制备方法以及增益芯片的性能测试结果，然后对无外腔镜的VECSEL增益芯片侧向激射现象及其变化情况进行了分析，并对带有外腔镜的VECSEL结构侧向激射及其抑制效果进行了介绍，最后进行了总结。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　器件结构与制备" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）是我们采用的直型腔VECSEL系统结构及工作原理示意图。其中增益芯片焊接到热沉上，热沉底部采用半导体制冷器（Thermoelectric cooler, TEC）以及水冷系统进行底座控温。泵浦源采用光纤输出的808 nm半导体激光模块" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，光纤直径为100 μm。为控制照射到增益芯片上的泵浦光尺寸，泵浦源模块的光纤输出端带有一套准直聚焦镜组。泵浦光以45°左右的入射角照射到增益芯片上，泵浦光斑直径约为0.2 mm。采用97.5%反射率的球面反射镜提供外腔谐振，曲率半径为7 cm。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a）980 nm VECSEL实验装置和增益芯片结构示意图；（b）增益芯片结构的SEM图片。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "（a）980 nm VECSEL experimental device and schematic diagram of gain chip structure. （b）SEM image of the gain chip structure." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032137&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032143&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032139&type=", "width": "163.00000000", "height": "61.30810547", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "VECSEL的增益芯片由刻蚀停止层、窗口层、有源区和分布式布拉格反射镜（Distributed Bragg reflectors DBR）组成，增益芯片结构示意图如" }, { "name": "xref", "data": { "text": "图 1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图 1" } ] } }, { "name": "text", "data": "（a）所示。有源区包含9个周期性排布的InGaAs量子阱；为补偿量子阱带来的应变效应，采用GaAsP材料作为势垒层；GaAs吸收区位于GaAsP势垒层中间" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为保证良好的散热特性，DBR反射镜材料采用AlAs/GaAs二元材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。增益芯片的扫描电子显微镜（SEM）图片如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）所示，插图为高倍SEM下的量子阱有源区结构。增益芯片的DBR对数为28对，在980 nm波段附近反射率可以达到99.9%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "增益芯片采用底发射结构，外延结构层采用Aixtron 200/4金属-有机化学气相沉积（MOCVD）在GaAs衬底上依次生长刻蚀阻挡层、窗口层、有源区、DBR" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。将外延生长完成的晶圆片解理为3 mm×3 mm的增益芯片并采用铟焊接到铜热沉上。采用机械减薄和选择性化学腐蚀移除衬底。最后将移除衬底后的VECSEL安装在TEC控温" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "模块上。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "室温下增益芯片的反射谱和光致发光谱如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。增益芯片反射谱呈现出明显的VECSEL反射带。分布布拉格反射镜与外延片的空气界面形成了微型腔，其中光场呈驻波分布，导致反射带有一个较为明显的凹陷，该凹陷最低处位于982 nm，该波长位置称为增益芯片的腔模位置，代表正向出射的激光模式波长" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "中红色曲线为采用光谱仪从侧向收集到的量子阱发光光谱，因此代表着量子阱的本征增益谱。其增益峰位于950 nm附近，与腔模位置相比，存在30 nm的波长失配。实际上，随着温度的升高，腔模和增益峰都会出现红移，理论上的温漂系数分别为0.1 nm·K" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和0.3 nm·K" }, { "name": "sup", "data": [ { "name": "text", "data": "-1[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，通过调节VECSEL的基底温度，可以在一定程度上调节增益峰与腔模波长的失配量。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "室温下增益芯片的反射谱与增益谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Reflectance and gain spectra of the gain chip at room temperature" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032147&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032154&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032150&type=", "width": "66.66131592", "height": "50.53286743", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　实验结果及分析" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "为观察我们开发的增益芯片侧向激射情况，在未加外腔镜的情况下，测试了不同工作温度下增益芯片侧向输出的光功率随泵浦功率变化关系，见" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "。在测量侧向激光输出功率时，采用侧向PL光谱积分值进行归一化来表示，这是因为侧向输出的激光功率较小，并且有芯片表面散射的泵浦光干扰，难以直接测试侧向激射功率。我们在同一位置捕捉光谱，并且设定相同的积分时间，以保证对比的有效性。可以看出，侧向激射的光功率随泵浦光功率的增加先快速增加，随后功率增加趋势变缓。最后当泵浦功率达到20 W时，出现了轻微的功率饱和现象。当增益芯片温度不同时，VECSEL的侧向激光功率曲线变化趋势也不相同。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "无外腔镜不同温度下侧向激射输出强度" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Lateral lasing output intensity at different temperatures without external cavity mirror" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032159&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032167&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032164&type=", "width": "62.38951111", "height": "50.76480103", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "中，侧向激射激光的阈值很低，并且随泵浦光功率增加，侧向激光快速增强。这是因为有源区内载流子浓度随泵浦光功率增加而不断增大，侧向激光增益增加。当泵浦功率增加到5~6 W左右，侧向激光输出功率虽然也在随泵浦功率增加，但斜率效率出现明显下降。由于侧向振荡激光的内部损耗很大，因此侧向激光的效率较低，随着泵浦功率的增加，增益芯片温度急剧升高，因而我们认为" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "中出现的功率曲线斜率效率快速下降是由于增益芯片内部热效应增强导致的。虽然此时侧向激光功率仍然在增加，然而其增加速度极慢，输出功率近乎饱和。这说明在该状态下，增益芯片的产热速度已经逐步超过了增益芯片向衬底的散热速度。同时，在" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "中，增益芯片衬底温度越低，则斜率效率拐点对应的泵浦功率越小，而超过拐点后的斜率效率数值则更大。这或许是因为更低工作温度下，量子阱的PL波长更短，该波长激光在增益芯片内部振荡时光损耗更为严重" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因而更早出现斜率效率拐点；然而，得益于低温衬底更好的散热效果，增益芯片具有更高的斜率效率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "泵浦光以45°角入射，泵浦功率为5 W时，不同温度下侧向输出的光谱如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示。当衬底温度分别为 0，10，20 ℃时，侧向激射激光的波长分别为949.17，950.21，951.37 nm。因而，可以得出侧向激射波长温漂速度约为0.11 nm/℃，而不同温度下侧向激射的光谱形状则未有大的改变。增益芯片表面泵浦光斑呈椭圆形，泵浦区域温度从中心向外呈梯度变化。热沉无法及时散去泵浦光斑中心区域废热，不同热沉控制温度下有源区温度相差较小，温度升高导致半导体材料的折射率发生变化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。侧向的两个解理面构成F-P腔，腔内材料折射率由于温度不同产生纵向分布，谐振腔的光学长度相较于常规F-P腔增大，导致腔的纵模间隔减小，最终温漂系数与理论值相比偏小。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "无外腔镜时0，10，20 ℃温度下侧向激射光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Spectra of lateral lasing at 0， 10， 20 ℃ without external cavity mirror." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032172&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032179&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032175&type=", "width": "68.73043823", "height": "61.10765076", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "根据" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "工作原理，搭建直型腔的VECSEL并进行出光性能验证，VECSEL在不同工作温度下的输出功率曲线如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。图中插图为泵浦功率为1.3 W时增益芯片表面的近场光斑。VECSEL的阈值泵浦光功率为2 W左右，随着工作温度的降低，阈值泵浦功率略有增加，这是因为量子阱增益谱在低温下与腔模的失谐更大，同样泵浦功率下，腔模模式增益略低。然而，低温下VECSEL的光光斜率效率明显更高，因为低温下增益芯片散热效果更好。当泵浦光功率增加至一定程度后，VECSEL输出功率逐渐饱和。由于功率饱和来自增益芯片内部热积累效应，因而VECSEL的饱和功率与工作温度有直接关系。当增益芯片温度分别控制在0，10，20 ℃时，VECSEL最大输出功率分别为500，410，340 mW。在泵浦功率为18 W时，温度从20 ℃降至10 ℃，输出功率提升16.63%；温度从10 ℃降至0 ℃，输出功率提升9.815%。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "中插图为TEC控温温度20 ℃、泵浦光功率为1.3 W时采用CCD捕捉的增益芯片表面近场光场情况。增益芯片中心光泵浦区域由于光能量较大，CCD靶面有饱和现象。从插图中可以明显看到，增益芯片4个对称的侧面位置有明显的光斑泄露，该位置即为增益芯片的侧向激射激光的输出位置。此时的泵浦功率低于VECSEL的阈值光功率，激光器尚未产生正向激射。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "不同工作温度下VECSEL输出功率曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "VECSEL output power curve at different operating temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032183&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032191&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032187&type=", "width": "63.60627747", "height": "50.76480103", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为验证VECSEL正向激射与侧向激射的功率关系，我们对比了不同温度下侧向激射的强度变化情况，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。由于侧向激射的光功率较低，无法直接捕捉到功率值，我们采用对侧向激光光谱积分的方式，并进行统一归一化后观察侧向激射光强度的变化趋势。可以看出，在泵浦功率尚未达到正向激射的阈值功率时，VECSEL的侧向激射强度随泵浦功率增加快速增大。此时增益芯片内部消耗的载流子均形成侧向激射效应。而当泵浦功率超出VECSEL阈值功率时，侧向激射强度不再增大，并且随着泵浦功率增加而逐渐降低，尤其是增益芯片温度在0 ℃时，侧向激射强度降低幅度更为明显。当增益芯片工作温度为20 ℃时，侧向激射虽然不再增加，但是侧向激射强度降低并不明显。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "中，不同温度下侧向激射强度存在明显梯度，0 ℃下侧向激射强度更低。增益芯片温度分别为0 ，10 ，20 ℃时，侧向光强度最终降低为0.55，0.70，0.88，为其最高值的82%、86%及88%。温度从20 ℃降至10 ℃，侧向激射衰减20%；温度从10 ℃降至0 ℃，侧向激射衰减16.6%。更低工作温度下，VECSEL具有更大的量子阱增益峰与腔模失配，说明增加量子阱增益峰与腔模失配量，可以实现抑制侧向激射的目的。当泵浦光功率为15 W时，不同温度下的统一归一化侧向激射光谱如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示。此时侧向发光光谱在950 nm附近以及990 nm附近分别出现了很强的激光峰。当泵浦功率为15 W时，正向激光光强很大，因而" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "中990 nm附近的激光可以认为是正向反馈到增益芯片的激光由于横向波导效应泄露到边缘的一小部分光强，这部分泄露的激光强度已经在侧向输出中占据主导位置。此时侧向激射已经被抑制，从光谱强度来看，也符合前文总结的失配程度大对侧向激射抑制更好的规律。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "不同温度下，正向激射输出功率及侧向激射强度。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Longitudinal lasing output power and lateral lasing intensity at different temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032195&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032203&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032199&type=", "width": "66.86900330", "height": "50.76480103", "fontsize": "" } ] } }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "不同温度下，有正向输出时侧向激射的光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Spectra of lateral lasing with longitudinal output at different temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032208&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032215&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032212&type=", "width": "152.01184082", "height": "38.29512024", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文对光泵浦VECSEL的侧向激射进行研究，提出增益峰-腔模失配的方法来抑制侧向激射。设计制备了一种增益峰-腔模大失配（~30 nm）的VECSEL增益芯片结构。增益峰和腔模的温漂系数不同，增益芯片温度每降低10 ℃，增益峰-腔模失配量增加1~2 nm。增益芯片温度从20 ℃降至10 ℃、从10 ℃降至0 ℃，侧向激射的衰减分别为20%、16.6%，正向激光功率提升分别为16.63%、9.815%。证明增益峰-腔模失配设计可以有效抑制侧边激射，提升正向输出效率。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GUINA M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "RANTAMÄKI A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HÄRKÖNEN A" }, { "name": "text", "data": ". 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