基于外延层转移的超薄垂直结构深紫外LED 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于外延层转移的超薄垂直结构深紫外LED" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "An Ultra-thin Vertical Deep Ultraviolet LED Realized by Epilayer Transfer" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "严", "givenname": "嘉彬", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YAN", "givenname": "Jiabin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp", "first-author" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： jbyan@njupt.edu.cn", "data": [ { "name": "text", "data": "E-mail： jbyan@njupt.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "严嘉彬（1991-），男，安徽泾县人，博士，讲师，2018年于东南大学获得博士学位，主要从事GaN光电子器件及光电单片集成的研究。 E-mail： jbyan@njupt.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032019&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032026&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032024&type=", "width": "24.89200020", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "严嘉彬" }, { "name": "text", "data": "（1991-），男，安徽泾县人，博士，讲师，2018年于东南大学获得博士学位，主要从事GaN光电子器件及光电单片集成的研究。 E-mail： " }, { "name": "text", "data": "jbyan@njupt.edu.cn" } ] ] } ], "email": "jbyan@njupt.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "孙", "givenname": "志航", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SUN", "givenname": "Zhihang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "房", "givenname": "力", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "FANG", "givenname": "Li", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "林宁", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Linning", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "永进", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Yongjin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "wangyj@njupt.edu.cn", "data": [ { "name": "text", "data": "wangyj@njupt.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "王永进（1977-），男，江苏徐州人，博士，教授，2005年于中国科学院上海微系统与信息技术研究所获得博士学位，主要从事光通信和光传感的研究。E-mail：wangyj@njupt.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032029&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032035&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032032&type=", "width": "24.89200211", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "王永进" }, { "name": "text", "data": "（1977-），男，江苏徐州人，博士，教授，2005年于中国科学院上海微系统与信息技术研究所获得博士学位，主要从事光通信和光传感的研究。E-mail：" }, { "name": "text", "data": "wangyj@njupt.edu.cn" } ] ] } ], "email": "wangyj@njupt.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "text": "南京邮电大学 彼得·格林贝格尔研究中心， 江苏 南京　210003", "data": [ { "name": "text", "data": "南京邮电大学 彼得·格林贝格尔研究中心， 江苏 南京　210003" } ] }, { "lang": "en", "text": "Peter Grünberg Research Centre， Nanjing University of Posts and Telecommunications， Nanjing 210003， China", "data": [ { "name": "text", "data": "Peter Grünberg Research Centre， Nanjing University of Posts and Telecommunications， Nanjing 210003， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "AlGaN 基深紫外（Deep ultraviolet，DUV）发光二极管（Light⁃emitting diode，LED）可用于杀菌、水体净化、光疗、固化、传感和非视距通信等场合，在生物、环境、工业、医疗和军事等领域具有广阔的应用前景。针对现阶段 DUV LED 外量子效率较低的问题，本文提出了一种超薄垂直结构的 DUV LED 方案。该方案基于蓝宝石‐硅晶圆键合和物理减薄工艺实现了高质量 DUV LED 外延层从蓝宝石衬底到高导热硅基板的转移，并采用转移后亚微米厚度的超薄外延层制备出垂直结构的 AlGaN DUV LED。器件的出光面在减薄工艺后无需特殊的化学处理便可实现纳米级的粗化，配合超薄外延层结构具备显著的失谐微腔效应，有助于破坏高阶波导模式，从而增加 TM 波的出光并提升器件的出光效率。测试表明，转移后的外延层厚度约为 710 nm，制备出的 DUV LED 发光光谱峰值波长约为 271 nm。该垂直结构 DUV LED 制备方案为实现高效 DUV 光源提供了可行路径。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "AlGaN-based deep ultraviolet（DUV） light-emitting diodes（LEDs） are deemed as the alternative of traditional mercury lamp used for sterilization， water purification， phototherapy， polymer curing， sensing， and non-line-of-sight communication， which own broad application prospects in biological， environmental， industrial， medical， and military fields. To improve the low external quantum efficiency of DUV LEDs， this work proposes a DUV LED scheme with ultra-thin vertical structure. Based on the sapphire-silicon wafer bonding and physical thinning processes， high-quality DUV LED epitaxial layers are transferred from sapphire substrate to high thermal conductivity silicon substrate. Subsequently the fabrication of DUV LED is successfully realized using the ultra-thin epitaxial layers. The light-emitting surface of the device can be roughened at the nanometer level without special chemical treatment after the thinning process. The combination of rough surface and ultra-thin epitaxial layers have serious detuned micro-cavity effect， which helps to destroy the high-order waveguide mode， thereby increasing the light extraction efficiency. The measured thickness of the epitaxial layers after transfer is about 710 nm. The peak wavelength of the fabricated DUV LED electroluminescent spectrum is about 271 nm. The vertical DUV LED fabrication scheme provides a feasible path for realizing a high-efficiency DUV light source." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "深紫外发光二极管" } ], [ { "name": "text", "data": "外延层转移" } ], [ { "name": "text", "data": "晶圆键合" } ], [ { "name": "text", "data": "减薄工艺" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "DUV LED" } ], [ { "name": "text", "data": "epilayer transfer" } ], [ { "name": "text", "data": "wafer bonding" } ], [ { "name": "text", "data": "thinning process" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "AlGaN 基深紫外（DUV）发光二极管（LED）与传统的 DUV 光源汞灯相比，具有体积小、电路需求低、无汞安全以及可靠性高的优势，通过调整 AlGaN 材料中的 Al 组分，其谱线范围可覆盖整个深紫外波段（200~280 nm），可用于杀菌、水体净化、光疗、固化、传感和非视距通信等场合，在生物、环境、工业、医疗和军事等领域具有广阔的应用前景" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5" ], "text": "1-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着《水俣公约》的生效，缔约国自 2020 年起禁止生产及进出口含汞产品，DUV LED 面临快速增长的良好机遇，未来市场潜力强劲。然而，现阶段 DUV LED 的外量子效率远低于可见光波段的 LED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R6", "R7", "R8" ], "text": "6-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，例如商用的 AlGaN DUV LED 性能普遍低于 10%，而商用的蓝光 LED 效率已经可达 80% 以上，并且随着波长的缩短这个问题尤为突出，极大地限制了 DUV LED 的应用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "外量子效率由内量子效率和光提取效率两个因子决定，通过改进外延层结构和材料质量，目前已经可以生长出内量子效率高于60%的DUV LED外延片" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因而极低的光提取效率成为制约DUV LED提升的关键。DUV LED光提取效率面临的挑战主要包括P型GaN接触层和电极对深紫外光的吸收、半导体/空气界面的高折射率差造成的严重全内反射以及TM模式为主导的光偏振。采用垂直结构是提升DUV LED外量子效率的有效途径" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，与传统的平面结构相比具有以下优势：垂直结构 LED 散热性能优异，器件可靠性高；电流无横向流动、分布均匀，可避免电流拥挤和局部高温，开启电压较低；无需平台刻蚀，器件有源区面积更大；在 N 型外延层上更易制作出有助于提升出光效率的微纳结构。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "DUV LED 的衬底材料包括 AlN 同质衬底材料以及碳化硅、蓝宝石等异质衬底材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R11", "R12", "R13" ], "text": "11-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，其中蓝宝衬底因具有成本低和工艺成熟等优势成为了DUV LED的主流衬底材料。然而，利用蓝宝石衬底的AlGaN外延片来实现高效的垂直结构 DUV LED 极具挑战，其关键环节在于蓝宝石衬底的去除。由于高质量的DUV LED外延层通常采用 AlN模板层，若将广泛用于可见光波段的激光剥离技术直接移植到深紫外器件，则在剥离过程中会产生铝金属颗粒沉积并最终引起外延片碎裂。虽然有相关的报道来解决DUV LED外延片的蓝宝石剥离问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但是这些工作基本都是通过在外延层中引入便于激光去除的GaN或者超晶格实现剥离，无疑会引起外延层的质量劣化或者增大工艺优化复杂度" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，要实现垂直结构的DUV LED，亟待开发出一种有效的蓝宝石去除工艺。针对上述问题，本文创新性地利用先进的晶圆键合工艺和蓝宝石减薄技术来进行蓝宝石衬底的去除和外延层的可靠转移，并基于硅衬底上的超薄外延层制备出DUV LED器件。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　器件制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "本文使用的 DUV LED 外延片采用金属有机化学气相沉积（MOCVD）方法生长于2英寸蓝宝石衬底上，蓝宝石的晶向为" }, { "name": "text", "data": "<" }, { "name": "text", "data": "0001" }, { "name": "text", "data": ">" }, { "name": "text", "data": "，MOCVD的 Al、Ga和N源分别是三甲基铝、三甲基镓和氨气，Si 和Mg掺杂剂源分别是四乙基硅烷和双环戊二烯基镁。在蓝宝石上方的外延层依次为AlN模板层、AlGaN缓冲层、N 型 Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.55" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.45" } ] }, { "name": "text", "data": "N 层、N 型 Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.65" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.35" } ] }, { "name": "text", "data": "N层（Si: 1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "19" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "）、多量子阱层、电子扩散阻挡层（Mg: 1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "19" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "）、P型 Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.57" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.43" } ] }, { "name": "text", "data": "N 层（Mg: 3.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "19" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "）以及P型GaN 欧姆接触层（Mg: 1.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "20" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "），如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）所示。DUV LED的制备工艺流程如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）~（k）所示。为了实现外延层从蓝宝石衬底到硅片的可靠转移，首先要进行蓝宝石外延片与硅片的键合。在外延片P型GaN上方通过电子束蒸发（Electron beam evaporation, EBE）均匀沉积Ni/Au 金属层，一方面与P型GaN形成欧姆接触作为电极层，另一方面作为深紫外的反射层；硅片选用2英寸的低阻双抛硅片，有利于降低器件的寄生电阻和开启电压，并于硅片的键合表面上沉积一层较厚的键合金属铟，接着与蓝宝石外延片进行键合，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（c）、（d）所示。晶圆键合的质量对于后续工艺能否成功转移外延层十分关键，要求键合晶片结合紧密，具有一定的键合强度，无气泡或局部脱落，同时键合引入的应力要控制在较低水平，避免键合晶片翘曲以及应力释放引发的外延层破裂。下一步，采用减薄机（AM Technology HRG-150）对蓝宝石衬底进行高速减薄，将蓝宝石的厚度从400 μm 减薄至100 μm左右，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（e）所示。接着，对蓝宝石衬底进行激光划片，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（f）所示，划片的网格间距为1 cm，该步骤的主要目的是通过划槽分割提前无损地释放键合晶片的应力，防止后续研磨工艺中外延片因应力过大而破损或脱落。随后，通过研磨（AM TechnologyAL-380F）将蓝宝石从100 μm减薄到30 μm，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（g）所示。为保证外延层在减薄过程中厚度的均匀性，再将2 寸晶圆分割成1 cm × 1 cm的小尺寸晶圆进行随后的减薄，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（h）、（i）所示。具体方法如下：对准蓝宝石面的划槽，在背面硅片对应位置处采用DISCO DAD3350 切割机进行划片，考虑硅片厚度在350 μm，为防止切割机刀片的损坏，划片深度控制在300 μm左右，划片结束后通过简单的机械方式即可实现晶圆的分离。下一步对1 cm × 1 cm的小尺寸晶圆进行慢速研磨，过程中通过厚度测试（通过Dektak-150 台阶仪扫描台阶高度确定研磨深度）仔细监测研磨的深度，当研磨至N型Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.55" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.45" } ] }, { "name": "text", "data": "N附近时停止，此时即成功实现了外延层从蓝宝石到硅片的转移，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（i）所示。接着在光刻胶图形的保护下利用电感耦合等离子体法进行刻蚀，暴露出部分外延层下方的金属区域，如" }, { "name": "xref", "data": { "text": "图 1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图 1" } ] } }, { "name": "text", "data": "（j）所示。最后沉积Ti/Pt/Au电极金属并采用剥离法成形，完成器件结构的制备，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（k）所示。方案中采用慢速研磨虽然可以在一定程度上控制减薄的精度，但是研磨液易导致粗糙的外延材料表面并产生表面损伤。为降低损伤对器件性能的影响，在蓝宝石厚度较薄时使用磁流变抛光等更为先进的减薄技术是一种可行路线。此外，在减薄过程中集成高倍显微观测功能，实现减薄厚度的实时监测对提升工艺可靠性具有重要意义。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "DUV LED 的外延结构和制作工艺流程" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Epilayers structure and fabrication process flow of the proposed DUV LED" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032038&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032042&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032040&type=", "width": "105.88275146", "height": "102.00061035", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　形貌表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "键合晶圆的横截面如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示，外延层位于蓝宝石衬底和硅衬底中间。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）是" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）中方框区域的放大照片，可以观察到明显的分层，表明外延层的质量良好；同时键合金属In和P型接触电极贴合紧密，表明键合可靠牢固。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（c）是" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）中方框区域的放大照片，其中多量子阱层位于 P 型掺杂层和N型Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.65" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.35" } ] }, { "name": "text", "data": "N层之间，在靠近蓝宝石的缓冲层上，能够观察到空腔并随着缓冲层厚度的增加空腔逐渐消失，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（d）所示，其作用是用来降低位错密度。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）键合晶圆的截面 SEM 照片，图中上面为硅片、下面为蓝宝石；（b）图（a）方框标记区域的放大照片，外延层的实际总厚度约为 4.5 μm；（c）图（b）方框标记区域的放大照片；（d）图（c）方框标记区域的放大照片。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "（a）Cross-sectional SEM image of bonded wafer. The upper side is silicon wafer and bottom is sapphire. （b）SEM image of enlarged partial region marked in the magnification box of （a）. The actual thickness of the bonding mental is about 4.5 μm. （c）SEM image of enlarged partial region marked in the magnification box of （b）. （d）SEM image of enlarged partial region marked in the magnification box of （c）." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032044&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032048&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032046&type=", "width": "132.94210815", "height": "82.80068970", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "制备完成后的器件形貌如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）为器件的 SEM 俯视照片，整个器件尺寸为 180 μm×180 μm，中央有源区域的最大宽度为120 μm，可以清晰地观察到外延层的台阶边缘；N型接触电极作为负电极位于外延层上，形状为四指状；外延上无电极覆盖区域为 DUV LED 的出光区域，外延层四周的浅色区域为器件的正电极，正电极与外延层下方的 P 型接触电极直接接触。使用金属作为N型接触电极存在光反射和光吸收两种负面作用，预期研发深紫外透明电极材料作为N型接触电极可增强出光效果。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b）是" }, { "name": "xref", "data": { "text": "图 3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图 3" } ] } }, { "name": "text", "data": "（a）中方框区域的放大照片，可以明显地看到外延层上表面（N型AlGaN层）较为粗糙；受到粗糙表面的影响，沉积的负电极形貌也相对粗糙。" }, { "name": "xref", "data": { "text": "图 3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图 3" } ] } }, { "name": "text", "data": "（c）提供了器件的AFM测试数据，可进一步精确定量表征器件的形貌。结果显示外延层的粗糙度（均方根偏差 " }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "）约为72 nm，转移后外延层的厚度在 710 nm 附近，该亚微米超薄外延层配合粗糙的出光表面" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R17", "R18", "R19" ], "text": "17-19", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "可有效破坏高阶波导模式，有利于提升器件的出光效率。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "（a）制备完成后的DUV LED的SEM俯视照片；（b）图（a）方框标记区域的放大照片；（c）LED的AFM照片，右边插图为双箭头虚线标注处的轮廓曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "（a）Top-view SEM image of the fabricated DUV LED. （b）SEM image of enlarged partial region marked in the magnification box of （a）. （c）AFM image of the LED. The right inset shows the profile curve of the device at the location of double arrow dotted line." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032051&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032055&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032053&type=", "width": "98.17950439", "height": "84.31872559", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　电流‐电压特性" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "DUV LED的" }, { "name": "italic", "data": [ { "name": "text", "data": "I‐V" } ] }, { "name": "text", "data": "特性如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示，曲线呈现出典型的二极管特性。当注入电流为 0.1 A/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " 时，器件的正向压降约为 9.9 V。对比采用相同外延片制备的平面型结构 DUV LED，本工作垂直结构器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "I‐V" } ] }, { "name": "text", "data": "特性劣化严重，排除了外延片自身的质量问题，导致器件正向压降较大的原因可能如下：（1）减薄过程中对外延层造成了机械损伤；（2）电极材料和处理工艺未经优化，接触电极和外延层间的接触电阻较大。探究电极接触的影响，对同一N型AlGaN外延层上两个N电极之间的电流-电压特性进行测试，结果见左上角插图，发现Ti/Pt/Au与N型AlGaN之间并非理想的欧姆接触，对DUV LED的电学特性造成负面影响。接触特性较差是由于氮面N型AlGaN的欧姆接触较为难做，而且键合金属 In 的熔点较低导致无法进行高温退火改善接触特性，后期可摸索温度更高的 Au/Au 键合并对 N 电极的材料和处理工艺进行优化。此外，当本工作垂直结构 DUV LED 的反向电压较大时，器件出现了一定程度的漏电，可能是外延层的损伤所引起。虽然器件的性能有进一步提升的空间，但是现阶段的器件原型可正常稳定工作，足以验证本文方案的可行性。器件在工作状态时的照片如右下角插图所示， CCD 图片上可观察到器件侧面和上表面无电极覆盖处的出光，显示出的蓝色可能是由于 CCD 系统对深紫外光的响应。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "DUV LED 的电流-电压特性。与本文垂直器件采用相同外延片制备的平面型结构DUV LED的电流-电压特性也放置于图中作为参考，左上角插图为同一N 型 AlGaN 外延层上两个N电极之间的电流-电压特性，右下角插图为器件工作时的CCD照片。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": " characteristic of the fabricated DUV LED. " }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " characteristic of a DUV LED fabricated by the same wafer with our vertical device is also included. The inset in upper left corner shows" }, { "name": "italic", "data": [ { "name": "text", "data": " I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " characteristic between two N-electrodes on the same N-doped AlGaN layer. The inset in bottom right corner shows the working device captured by CCD." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032058&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032063&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032061&type=", "width": "67.13452148", "height": "46.94770813", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　电容⁃电压特性" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "C⁃V" } ] }, { "name": "text", "data": "特性如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，测试交流（AC）信号的幅度为30 mV，不同频率下的测试曲线呈现较为一致的趋势。随着电压增大，DUV LED的电容先缓慢增大，当偏置电压大于LED的开启电压时，注入的空穴和电子在量子阱区域产生辐射复合" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，造成电压较大时" }, { "name": "italic", "data": [ { "name": "text", "data": "C⁃V" } ] }, { "name": "text", "data": "曲线的振荡。在测试AC频率范围内，偏置电压为负时不同频率的" }, { "name": "italic", "data": [ { "name": "text", "data": "C⁃V" } ] }, { "name": "text", "data": "曲线基本重合，偏置电压为正时" }, { "name": "italic", "data": [ { "name": "text", "data": "C⁃V" } ] }, { "name": "text", "data": "曲线出现分化且频率越高电容值越小。参考1 MHz（常采用的测试条件）测试数据，在整个测试电压范围最大电容值约为7.3 pF，因而电容数值相对较小，不构成影响RC时间常数或者响应时间的主要因素。以正向偏置15 V为例，此时对应的电容和动态电阻数值分别约为7.2 pF和30 kΩ，计算出的RC时间常数为4.6 μs，其中动态电阻的数值具有较大的优化空间，可推断降低动态电阻是提升器件动态响应速度的有效途径。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "DUV LED 的电容-电压特性" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": " characteristics of the fabricated DUV LED" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032067&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032074&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032071&type=", "width": "58.15969086", "height": "46.81051636", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　EL谱特性" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "在器件的两端注入一定的电流，通过直径200 μm的多模光纤将发射光耦合进光谱仪（Ocean Optics HR4000），得到的电致发光谱如" }, { "name": "xref", "data": { "text": "图 6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图 6" } ] } }, { "name": "text", "data": "所示。其光谱曲线存在两个峰值，主峰的位置在271 nm附近，位于 DUV 波段；次峰的位置在 542 nm 附近，位于绿光波段。通过在光纤的接收端置入一个长波通滤光片（LBTEK MEFH10-450LP，起始波长450 nm），结果光谱上的主峰和次峰同时消失，可推断次峰是光谱仪测试引起的二次衍射。此外，图中的发光相对强度随着注入电流密度的增大而增大，但是峰值波长没有明显的偏移，表明测试范围内电流拥挤效应不是很明显。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "DUV LED 的电致发光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "EL spectra of the fabricated DUV LED" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032078&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032085&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=41032082&type=", "width": "57.22428894", "height": "45.89202881", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文提供了一种崭新且可行的垂直结构AlGaN DUV LED 实现方案，利用晶圆键合和蓝宝石减薄技术成功实现了 AlGaN DUV LED 外延层从蓝宝石衬底到硅衬底的转移; 接着基于亚微米超薄外延层制备出垂直结构 DUV LED，过程无需特殊的化学处理即获得了粗糙的出光表面。测试结果验证了制备方案的可行性，器件采用指状 N 型接触电极的设计可正常出光。虽然垂直结构的理论出光效率较高（不考虑出光面的电极遮挡 P 型 GaN 厚度 10 nm 时出光效率高于 35%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "），但是器件目前的寄生电阻较大、N 电极对出射光同时有反射和吸收两种负面效应，并且由于电极尺寸较小无法完成出光效率的测试封装，在后期的工作中有望得到进一步的优化和改善。" } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "王军喜" }, { "name": "text", "data": "， " }, { "name": "text", "data": "闫建昌" }, { "name": "text", "data": "， " }, { "name": "text", "data": "郭亚楠" }, { "name": "text", "data": "， " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". 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