2D/3D混合Sn基钙钛矿/SnO₂异质结光探测器 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "2D/3D混合Sn基钙钛矿/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "异质结光探测器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Photodetectors Based on A 2D/3D Hybrid Tin Perovskite/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2 " } ] }, { "name": "text", "data": "Heterojunction" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "苏", "givenname": "子生", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SU", "givenname": "Zi-sheng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "苏子生（1981-），男，福建闽清人，博士，教授，2009年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事有机光电材料与器件的研究。Email: suzs@qztc. edu. cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863285&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863290&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863288&type=", "width": "25.00000000", "height": "29.99997711", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "苏子生" }, { "name": "text", "data": "（1981-），男，福建闽清人，博士，教授，2009年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事有机光电材料与器件的研究。Email: " }, { "name": "text", "data": "suzs@qztc. edu. cn" } ] ] } ], "email": "suzs@qztc. edu. cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "璐", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Lu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "胡", "givenname": "跃", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HU", "givenname": "Yue", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "姚", "givenname": "广平", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YAO", "givenname": "Guang-ping", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "丽丹", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Li-dan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [ "corresp", "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： wangld@qztc.edu.cn", "data": [ { "name": "text", "data": "E-mail： wangld@qztc.edu.cn" } ] }, { "rid": "cor2", "lang": "zh", "text": "Email： wangld@qztc.edu.cn", "data": [ { "name": "text", "data": "Email： wangld@qztc.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "王丽丹（1981-），女，吉林省吉林市人，博士，副教授，2011年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事纳米半导体材料与器件的研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863294&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863300&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863297&type=", "width": "25.00000000", "height": "29.99985504", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "王丽丹" }, { "name": "text", "data": "（1981-），女，吉林省吉林市人，博士，副教授，2011年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事纳米半导体材料与器件的研究。" } ] ] } ], "email": "wangld@qztc.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "泉州师范学院物理与信息工程学院 福建省先进微纳光子技术与器件重点实验室， 福建 泉州　362000", "data": [ { "name": "text", "data": "泉州师范学院物理与信息工程学院 福建省先进微纳光子技术与器件重点实验室， 福建 泉州　362000" } ] }, { "lang": "en", "label": "1", "text": "Fujian Key Laboratory for Advanced Micro-nano Photonics Technology and Devices， College of Physics and Information Engineering， Quanzhou Normal University， Quanzhou 362000， China", "data": [ { "name": "text", "data": "Fujian Key Laboratory for Advanced Micro-nano Photonics Technology and Devices， College of Physics and Information Engineering， Quanzhou Normal University， Quanzhou 362000， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "泉州师范学院 化工与材料学院， 福建 泉州　362000", "data": [ { "name": "text", "data": "泉州师范学院 化工与材料学院， 福建 泉州　362000" } ] }, { "lang": "en", "label": "2", "text": "College of Chemical Engineering and Material， Quanzhou Normal University， Quanzhou 362000， China", "data": [ { "name": "text", "data": "College of Chemical Engineering and Material， Quanzhou Normal University， Quanzhou 362000， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "制备了平面结构2D/3D混合钙钛矿（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "异质结光探测器。研究发现，SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的引入可以调控（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的晶体生长过程，有助于获得致密的连续薄膜。在520 nm单色光辐照下，器件的响应度高达3.19×10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " A/W，相应的探测率为6.39×10" }, { "name": "sup", "data": [ { "name": "text", "data": "15" } ] }, { "name": "text", "data": " Jones。在808 nm单色光辐照下，器件的响应度和探测器率也可分别达到1.70×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " A/W和7.28×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones。相关性能明显高于 （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单层薄膜光探测器。器件性能的提高一方面是由于钙钛矿薄膜表面形貌的改善，提高了器件的吸收效率和载流子收集效率；另一方面是由于（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "之间形成了p⁃n结结构，从而有效提高了钙钛矿薄膜中的光生电子⁃空穴对的分离效率，降低了电子和空穴的复合几率。同时，（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "界面处特殊的能级结构也可诱导器件产生光电导增益。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Planar structure photodetector based on a 2D/3D hybrid perovskite （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " heterojunction was constructed. It is found that the inserted SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " layer can manipulate the crystal growth process of the （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " film， benefiting to form a dense and continued film. Under illumination of a 520 nm monochromatic light， the device shows a high response of 3.19×10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " A/W， corresponding to a detectivity of 6.39×10" }, { "name": "sup", "data": [ { "name": "text", "data": "15" } ] }, { "name": "text", "data": " Jones. While under illumination of an 808 nm monochromatic light， the device also shows a response of 1.70×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " A/W and a detectivity of 7.28×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones. These performances are dramatically higher than that device based on a simple （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3 " } ] }, { "name": "text", "data": " film.On the one hand， the improvements are attributed to the improved morphology of the perovskite film， which increases the absorption efficiency and charge carrier collection efficiency of the device；on the other hand， the formation of a p-n junction between （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " and SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " effectively increases the dissociation efficiency of the photogenerated electron-hole pairs in the perovskite and decreases the recombination probability of the electrons and holes. Moreover， the special electronic structure at the （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " interface may also trigger the device revealing a photoconduction gain." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "光探测器" } ], [ { "name": "text", "data": "Sn基钙钛矿" } ], [ { "name": "text", "data": "异质结" } ], [ { "name": "text", "data": "2D/3D混合结构" } ], [ { "name": "text", "data": "SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "photodetector" } ], [ { "name": "text", "data": "Sn perovskite" } ], [ { "name": "text", "data": "heterojunction" } ], [ { "name": "text", "data": "2D/3D hybrid structure" } ], [ { "name": "text", "data": "SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "光探测器可以将入射的光信号转化为电信号，在民用和军事领域均具有重要的应用，如图像传感、环境监测、远程监控、光通讯、航空航天遥感、导弹制导等。通过选择不同的光敏材料，光探测器可以实现对不同波长入射光的探测。近年来，有机/无机杂化钙钛矿材料因为激子扩散长度长、载流子迁移率高、禁带宽度可调、光吸收效率高、与柔性基板兼容、制备工艺简单等优点被广泛应用于光探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5" ], "text": "1-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。有机/无机杂化钙钛矿材料的化学式为" }, { "name": "italic", "data": [ { "name": "text", "data": "ABX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "为CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "、CH（NH" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "等有机阳离子，" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "为Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "、Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "等金属阳离子，" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "为Cl" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "、Br" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "、I" }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": "等卤素阴离子。目前，基于Pb基钙钛矿材料的光探测器已经取得了良好的性能，部分性能甚至超过了商用的Si基光探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R6", "R7" ], "text": "6-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是Pb元素毒性较大，Pb泄露会对环境造成破坏，危害人体健康。因此，开发环境友好的高性能无Pb钙钛矿材料成为目前研究的热点。用Sn、Bi、Cu、Ge等金属取代金属Pb已有报道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R8", "R9", "R10" ], "text": "8-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Sn与Pb在元素周期表中处于同一主族，同时它们的离子半径相当（Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "为0.135 nm，Pb" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "为0.149 nm），因此用Sn取代Pb可以最大程度保持钙钛矿材料的晶体结构，被认为是取代Pb的最理想材料。但是，Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "在空气中极易被氧化为Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "，造成钙钛矿材料性能的衰减和薄膜形貌的破坏" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。研究者们开发了多种方法用于改善Sn基钙钛矿材料的稳定性，比如在前驱体溶液中加入SnF" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、SnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "等添加剂" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } } ], "rid": [ "R12", "R13", "R14" ], "text": "12-14", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2D结构是另一种有效提高钙钛矿材料稳定性的方法，已经被用于太阳能电池" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、场效应晶体管" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "和光探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "R17", "R18" ], "text": "17-18", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Ruddlesden-Popper结构2D钙钛矿材料是在3D钙钛矿的基础上引入大的有机官能团形成的，其化学通式为（" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "A" }, { "name": "sub", "data": [ { "name": "text", "data": "n" } ] } ] }, { "name": "sub", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "B" }, { "name": "sub", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "n" } ] } ] }, { "name": "sub", "data": [ { "name": "text", "data": "+1" } ] }, { "name": "text", "data": "，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "为大的有机官能团。2D钙钛矿可以看成是不同层数（通式中的" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "值）的正八面体结构的[" }, { "name": "italic", "data": [ { "name": "text", "data": "BX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "]" }, { "name": "sup", "data": [ { "name": "text", "data": "4-" } ] }, { "name": "text", "data": "无机3D骨架夹在庞大的有机空间阳离子层（" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "）之间。有机空间阳离子层的介电效应和量子限域效应使其激子束缚能增大，激子扩散长度减小，光生激子分解效率降低；同时由于2D钙钛矿分子具有自组装的特性，薄膜中的无机钙钛矿晶体会择优沿着水平方向生长，而有机空间阳离子层载流子迁移率较低，从而限制了2D钙钛矿材料垂直方向的载流子迁移率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R19", "R20" ], "text": "19-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，虽然基于2D钙钛矿材料的器件稳定性得到了显著改善，但是器件性能较3D钙钛矿材料还有一定差距。2D/3D混合结构钙钛矿材料既可以发挥2D材料的缺陷钝化作用和稳定性，又可以保持3D材料良好的光电性能。Ran等报道了基于2D/3D混合结构（PEA,FA）SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的钙钛矿太阳能电池，效率为6.98%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Shao等报道了基于（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "和FASnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的2D/3D混合结构钙钛矿太阳能电池，其效率达到9%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Jiang等通过在前驱体溶液中加入NH" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "SCN，使基于（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的2D/3D混合Sn基钙钛矿太阳能电池效率提高到12.4%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然Sn基钙钛矿材料已经被广泛应用于太阳能电池" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R24", "R25" ], "text": "24-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但是目前在光探测器方面的应用还较少" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } } ], "rid": [ "R26", "R27" ], "text": "26-27", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "异质结结构经常被用于提高光电导结构光探测器的性能，可用于构筑异质结结构的材料有石墨烯" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、WS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、ZnO" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等。本文采用2D/3D混合Sn基钙钛矿材料（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "与n型半导体材料SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "构成平面结构光探测器，研究了SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的引入对薄膜形貌和器件性能的影响。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　器件制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "实验中所有光探测器均以FTO玻璃作为基板，FTO电极间的沟道尺寸为60 μm×1 000 μm。基板依次采用丙酮、去离子水、酒精清洗并烘干。在旋涂SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜前，基板经紫外-臭氧处理20 min。SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "分散液由浓度为15%的SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "水溶液与去离子水按照体积比为1∶3的比例配置而成。将SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "分散液均匀滴加到FTO基板上，以不同转速旋涂，并在150 ℃下退火30 min，形成SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜。2D/3D混合结构Sn基钙钛矿材料（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "‐SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的制备参考文献报道的方法进行" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，实验过程中对制备条件进行了优化。钙钛矿前驱体溶液中加入适量碘化苯乙胺（PEAI），同时加入SnF" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为添加剂，抑制Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "的氧化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。PEAI、甲脒氢碘酸盐（FAI）、SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、SnF" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "按照0.15∶0.85∶1∶0.075的量比溶解在体积比为4∶1的N,N-二甲基甲酰胺和二甲基亚砜混合溶液中，配置成浓度为0.8 mol/L的钙钛矿前驱体溶液。前驱体溶液在手套箱中70 ℃下搅拌1 h。制备好的SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜经紫外-臭氧处理20 min后转移到手套箱中。钙钛矿薄膜采用两段旋涂法制备，其中第一阶段以500 r/min的速度旋涂5 s，第二阶段以2 000 r/min的速度旋涂60 s，并在第10 s时滴加300 μL氯苯作为反溶剂。旋涂后的基板在70 ℃下退火10 min，形成2D/3D混合钙钛矿（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜。钙钛矿薄膜的组分是根据原料配比计算得到的，实际组分可能会有偏差。作为对比，实验中同时制备了不含SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的光探测器。所制备的光探测器结构如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（a）和（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（b）光探测器结构" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Device structure of the photodetectors based on （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（a） and （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（b）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863305&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863308&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863307&type=", "width": "65.61663818", "height": "58.84332275", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　器件表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "薄膜的扫描电子显微镜（SEM）照片由Zeiss公司的Merlin Compact场发射扫描电子显微镜测量。吸收光谱由PerkinElmer公司的Lambda 950分光光度计测量。光探测器的电流" }, { "name": "italic", "data": [ { "name": "text", "data": "‑" } ] }, { "name": "text", "data": "电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "I‑V" } ] }, { "name": "text", "data": "）特性曲线由上海辰华仪器有限公司的CHI660E电化学工作站测量。辐照光源为太阳模拟器或者激光二极管，其光强由标准太阳能电池或者Newport公司的818" }, { "name": "italic", "data": [ { "name": "text", "data": "‑" } ] }, { "name": "text", "data": "UV硅光电探测器进行校准。所有测试均在大气环境中室温下完成。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　薄膜形貌" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "对于（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "平面异质结光探测器，当采用不同的转速制备SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜时，相应的探测器在100 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的AM1.5G太阳能模拟器辐照下的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线和暗电流曲线分别如图S1（a）、（b）所示。器件的光暗电流开关比列于表S1中，可以看出当转速为2 000 r/min时，相应器件的光暗电流开关比最高。相应的SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜截面的SEM图如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。从图中可以看出，该薄膜具有比较平整的表面，厚度约为40 nm。在后续实验中，固定SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的转速为2 000 r/min。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "转速为2 000 r/min时制备的SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜截面的SEM图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Cross-sectional SEM image of the SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2 " } ] }, { "name": "text", "data": "film prepared with a spin-coating speed of 2 000 r/min" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863309&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863311&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863310&type=", "width": "76.39788818", "height": "37.10540771", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "图S2（a）、（b）分别为SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和FTO薄膜的表面SEM图。从图中可以看出，SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜表面较平整，看不出明显的晶体颗粒；而FTO薄膜表面较粗糙，可以看出明显的晶体颗粒。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）、（c）为FTO基板上直接制备的（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜在不同放大倍率下的表面SEM图。从图中可以看出，虽然钙钛矿晶体的尺寸可以达到微米尺度甚至更大，但是钙钛矿晶粒间存在较大空隙，从而可以清晰地看到底部的FTO薄膜。从薄膜的截面SEM（图S3（a））也可以看出，FTO表面存在未被钙钛矿薄膜覆盖的区域，钙钛矿薄膜厚度最大的位置可以达到约1.2 μm。这些空隙的存在阻断了载流子的传输通道，降低了光生载流子的收集效率。而在SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜上制备的（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜具有明显不同的表面形貌。从" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b）、（d）可以看出，所制备的薄膜为一层致密的连续薄膜，这层薄膜的形貌与SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "明显不同，推测应该为 （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜。在这层连续的钙钛矿薄膜上面，分布着许多类似“花状”的晶粒。这些晶粒的尺寸可以达到5 μm以上。这是由于经过紫外-臭氧处理的SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "表面具有更好的浸润性，钙钛矿前驱体溶液在其表面可以更均匀地铺展" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。从薄膜的截面SEM（图S3（b））也可以看出，SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "表面被钙钛矿薄膜完全覆盖，但是钙钛矿薄膜厚度最大的位置只有约500 nm，而厚度小的位置不足200 nm。因此从薄膜的表面形貌推测，在SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜上制备的（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "能够形成连续的载流子传输通道，更有利于光生载流子的收集。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "不同放大倍率下（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（（a）、（c））和（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（（b）、（d））的表面SEM图片" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "SEM images of （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（（a）， （c）） and （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "（（b）， （d）） films with different amplification ratio" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863312&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863314&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863313&type=", "width": "75.52716064", "height": "51.56250000", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　薄膜的吸收光谱" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "为FTO基板和SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基板上制备的（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的吸收光谱。从图中可以看出，（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的吸收为一个宽带吸收，其吸收一直延伸到1 000 nm，与文献报道的3D钙钛矿材料FASnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的吸收一致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } } ], "rid": [ "R33", "R34" ], "text": "33-34", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同时，在600 nm附近有一个明显的吸收峰，这个吸收峰被归结为2D钙钛矿材料（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "的吸收" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些结果从侧面表明，所制备的钙钛矿薄膜中可能同时存在3D的FASnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和2D的（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "钙钛矿成分。在2D钙钛矿材料制备过程中，很难获得纯相的2D或者准2D钙钛矿材料，因此可以推测薄膜中还含有其他准2D的（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "n-1" } ] }, { "name": "text", "data": "Sn" }, { "name": "sub", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "3n+1" } ] }, { "name": "text", "data": "钙钛矿材料，薄膜成分的准确测量还需要其他测试手段。另外还可以看出，SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基板上的（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜吸收效率更高，这可能是由于该薄膜更加致密（如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "和S3所示）。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "FTO基板和SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基板上制备的（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的吸收光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "Absorption spectra of the （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3 " } ] }, { "name": "text", "data": "films on FTO and SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " substrates" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863315&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863319&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863317&type=", "width": "70.92212677", "height": "51.33932495", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　器件的光电性能" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）、（b）分别为 （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单层光探测器在520 nm绿光和808 nm近红外光辐照下的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线。由于所制备的器件具有对称结构，器件的正向电压和反向电压区域的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线理论上应该是对称的。但是所测得的曲线并不完全对称，而且在高电压和高辐照功率下，曲线出现饱和的现象。这一方面是由于（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/FTO界面处存在一定的载流子传输势垒，光生载流子浓度较大时可能在界面处发生堆积。另一方面是由于钙钛矿薄膜中存在可移动的离子，这些离子也可能在（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "界面处堆积，形成反向的内建电场" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而且离子的移动在光照下更明显" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当电压为5 V时，器件的暗电流为12.99 μA。通常Sn基钙钛矿光探测器的暗电流都较大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这是由于在空气中，Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "被氧化为Sn" }, { "name": "sup", "data": [ { "name": "text", "data": "4+" } ] }, { "name": "text", "data": "，对钙钛矿薄膜形成p型掺杂，薄膜中的空穴浓度增大，进而使器件的暗电流增大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着辐照功率的增大，器件的光电流逐渐增大，表明器件的光生载流子浓度随着辐照功率逐渐增大。在0.456 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的520 nm绿光辐照下，5 V时器件的电流为29.84 μA，相应的光暗电流开关比仅为2.3。在1.68 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的808 nm近红外光辐照下，5 V时器件的电流为59.07 μA，光暗电流开关比为4.5。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单层光探测器在520 nm绿光（a）和808 nm近红外光（b）辐照下的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": " curves of the single layer （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " photodetector under illumination of 520 nm green light（a） and 808 nm near-infrared light（b）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863321&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863327&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863323&type=", "width": "72.54516602", "height": "104.59359741", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "（a）、（b）分别为（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "异质结光探测器在520 nm绿光和808 nm近红外光辐照下的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线。当电压为5 V时，器件的暗电流为4.65 μA。与（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "单层光探测器相比，器件的暗电流显著降低。器件光照下的电流与（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "光探测器呈现相同的规律。但是，在相同辐照功率下，（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光探测器的电流明显提高。在0.456 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的520 nm绿光辐照下，5 V时器件的电流为156.5 μA，相应的光暗电流开关比为33.7。在1.68 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的808 nm近红外光辐照下，5 V时器件的电流为230.2 μA，光暗电流开关比为49.5。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光探测器在520 nm绿光（a）和808 nm近红外光（b）辐照下的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": " curves of the （PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " photodetector under illumination of 520 nm green light（a） and 808 nm near-infrared light（b）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863330&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863335&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863333&type=", "width": "72.01916504", "height": "105.38497925", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "响应度（" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "）、光电导增益（" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": "）和探测率（" }, { "name": "italic", "data": [ { "name": "text", "data": "D" }, { "name": "sup", "data": [ { "name": "text", "data": "*" } ] } ] }, { "name": "text", "data": "）是表征光探测器性能的主要参数。响应度可以由下式计算得到：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863339&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863337&type=", "width": "15.23999977", "height": "8.72066593", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ph" } ] }, { "name": "text", "data": "为光电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "为辐照光密度，" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "为光探测器光敏面积。" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ph" } ] }, { "name": "text", "data": "由探测器光照下的电流（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "light" } ] }, { "name": "text", "data": "）和暗流电流（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": "）之差决定：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（2）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863341&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863340&type=", "width": "22.26733208", "height": "3.72533321", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "光电导增益可以表示为：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（3）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863344&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863343&type=", "width": "17.18733406", "height": "7.28133297", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF3" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "为辐照光源的波长。探测率由下式决定：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（4）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863347&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863345&type=", "width": "23.79133224", "height": "9.73666668", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF4" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "为电子电荷。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "为驱动电压为5 V时，（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "光探测器在不同功率单色光辐照下的响应度和探测率变化曲线。从图中可以看出，（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "探测器的响应度和探测率均明显高于（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件。在1.29×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5 " } ] }, { "name": "text", "data": "mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的520 nm单色光辐照下，（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件的响应度为1.34×10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " A/W，光电导增益为3.20×10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "。而（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "器件的响应度和光电导增益分别为3.19×10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " A/W和7.61×10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "，是（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件的2.38倍。随着辐照功率增大，器件的响应度逐渐下降。这是由于随着辐照功率的增大，器件中产生的光生载流子数量相应增加，载流子浓度增大使光生电子和空穴的复合几率也提高，从而使光电流增长的幅度下降" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } } ], "rid": [ "R33", "R34" ], "text": "33-34", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。即使在辐照功率为0.456 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时，两个器件的响应度还可分别达到61.6 A/W和555 A/W，后者是前者的9.01倍。在808 nm近红外光辐照下，器件仍表现出良好的性能，表明所制备的探测器可以实现宽光谱探测。这是由于Sn基钙钛矿材料具有较小的禁带宽度，其吸收光谱可以延伸到近红外光区域，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示。在9.19×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4 " } ] }, { "name": "text", "data": "mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的808 nm单色光辐照下，（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件的响应度和光电导增益分别为1.70×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " A/W和2.61×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "。而（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "‐FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "器件的响应度和光电导增益分别为7.83×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " A/W和1.20×10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "，是（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件的4.61倍。同样地，随着辐照功率增大，器件的响应度也逐渐减小。当辐照功率为1.68 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时，两个器件的响应度分别为45.7 A/W和225 A/W，后者是前者的4.92倍。从图中还可以看出，在相同辐照强度下，器件对520 nm和808 nm单色光的响应度相近，与钙钛矿薄膜的吸收曲线并不成正比。这一方面是由于波长越短，光子能量越高，在相同的光功率下光子数量越少，理论上可产生的电子数量也越少。另一方面，波长越长的光子穿透深度越大，在钙钛矿薄膜底部所产生的光生载流子数量也越多，这些载流子更容易被底部的FTO电极所收集。另外，随着辐照功率的增大，（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "器件的响应度下降幅度小于（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件。这可能是由于SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的加入使得光生电子和空穴的传输通道更好地分离，降低了载流子的复合几率。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "驱动电压为5 V时探测器的响应度和探测率随辐照功率的变化曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "Response and detectivity of the photodetectors as a function of the illumination intensity under applied bias of 5 V" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863348&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863350&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863349&type=", "width": "97.61763000", "height": "67.31501770", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "器件的探测率与响应度具有类似的规律。 在1.29×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5 " } ] }, { "name": "text", "data": "mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的520 nm单色光辐照下，（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件的探测率为1.61×10" }, { "name": "sup", "data": [ { "name": "text", "data": "15" } ] }, { "name": "text", "data": " Jones，而（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "器件的探测率为6.39×10" }, { "name": "sup", "data": [ { "name": "text", "data": "15" } ] }, { "name": "text", "data": " Jones，是前者的3.97倍。器件探测率提高的幅度大于响应度，这是由于加入SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "后器件的暗电流减小的缘故。当辐照功率为0.456 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时，两个器件的探测率还可分别达到7.40×10" }, { "name": "sup", "data": [ { "name": "text", "data": "11" } ] }, { "name": "text", "data": " Jones和1.12×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones。在9.19×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的808 nm单色光辐照下，两个器件的探测率分别为7.28×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones和5.65×10" }, { "name": "sup", "data": [ { "name": "text", "data": "14" } ] }, { "name": "text", "data": " Jones。当辐照功率为1.68 mW/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时，两个器件的探测率还可分别达到5.49×10" }, { "name": "sup", "data": [ { "name": "text", "data": "11" } ] }, { "name": "text", "data": " Jones和4.58×10" }, { "name": "sup", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": " Jones。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "对比了基于Sn基多晶钙钛矿薄膜的光探测器性能。从表中可以看出，本文所制备的（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "‐FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "异质结光探测器的响应度和探测率是目前已报道的最高值之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } } ], "rid": [ "R33", "R34" ], "text": "33-34", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。需要指出的是，虽然在钙钛矿薄膜的前驱体溶液中添加SnF" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和PEAI可以提高薄膜的稳定性，但是由于（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "直接暴露在空气中（湿度为60%~90%），器件在1 h后几乎完全失效。因此，提高Sn基钙钛矿材料的稳定性是将来亟需解决的首要问题。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "Sn基多晶钙钛矿薄膜光探测器性能比较" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Comparison of the performances of the photodetectors with Sn based polycrystalline perovskite films" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "器件结构" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "辐照光源" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "响应度/（A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "探测率/Jones" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "参考文献" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "（rGO/PEDOT∶PSS）/（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": 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"name": "text", "data": "是一种n型半导体材料，其导带和价带分别为4.5 eV和8.0 eV" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "‐FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的导带和价带分别为3.7 eV和5.1 eV" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。二者形成了p-n结结构，并且二者的导带间存在0.8 eV的能级差。光照下，（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "吸收入射光子产生电子-空穴对，其中的电子可以从其导带向SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的导带转移，促进了光生电子-空穴对的分离。同时，由于电子和空穴在不同材料中传输，降低了电子和空穴的复合几率。这些作用使（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "异质结光探测器的性能较（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "器件有了大幅提升。另外，钙钛矿晶粒表面存在大量深能级陷阱" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当空穴通过钙钛矿薄膜向阳极传输时，由于SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的空穴阻挡作用，空穴将在（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "界面处堆积，并被束缚在深能级陷阱中。因此在与这些被束缚的空穴复合前，电子可以从阳极多次注入，形成光门控效应（Photogating effect），从而产生光电导增益" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用溶液旋涂法制备了平面结构2D/3D混合钙钛矿（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "异质结光探测器。与单层（PEA）" }, { "name": "sub", "data": [ { "name": "text", "data": "0.15" } ] }, { "name": "text", "data": "FA" }, { "name": "sub", "data": [ { "name": "text", "data": "0.85" } ] }, { "name": "text", "data": "SnI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "光探测器相比，器件性能显著提高。SnO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的加入不仅可以改善钙钛矿薄膜的表面形貌，还可以形成p-n结结构，诱导器件产生光电导增益。优化器件在可见光和近红外光区域均具有良好的光电性能，响应度和探测率可分别达到10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " A/W和10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones以上。这些结果表明，异质结结构可以有效提高钙钛矿光探测器的性能，在构筑高性能、低成本的钙钛矿光探测器方面具有潜在的应用前景。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文补充文件和专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220107." } ], "href": 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