53 Gbit/s高速单模940 nm垂直腔面发射激光器 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "53 Gbit/s高速单模940 nm垂直腔面发射激光器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "53 Gbit/s High Speed Single Mode 940 nm Vertical-cavity Surface-emitting Laser" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "徐", "givenname": "汉阳", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XU", "givenname": "Han-yang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "徐汉阳（1998-），男，河北保定人，硕士研究生，2020年于哈尔滨工业大学（威海）获得学士学位，主要从事垂直腔面发射激光器的研究。Email: 2394929014@qq. com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863181&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863189&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863185&type=", "width": "25.00000000", "height": "30.00000000", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "徐汉阳" }, { "name": "text", "data": "（1998-），男，河北保定人，硕士研究生，2020年于哈尔滨工业大学（威海）获得学士学位，主要从事垂直腔面发射激光器的研究。Email: " }, { "name": "text", "data": "2394929014@qq. com" } ] ] } ], "email": "2394929014@qq. com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "田", "givenname": "思聪", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "TIAN", "givenname": "Si-cong", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp", "corresp" ], "corresp": [ { "rid": "cor1", "lang": "zh", "text": "Email： tiansicong@ciomp.ac.cn", "data": [ { "name": "text", "data": "Email： tiansicong@ciomp.ac.cn" } ] }, { "rid": "cor2", "lang": "en", "text": "Email： tiansicong@ciomp.ac.cn", "data": [ { "name": "text", "data": "Email： tiansicong@ciomp.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "田思聪（1984-），男，吉林长春人，博士，研究员，博士生导师，2012 年于吉林大学获得博士学位，主要从事高速VCSEL和光子晶体激光器的研究。 " ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863202&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863202&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863202&type=", "width": "25.00000000", "height": "30.00000000", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "田思聪" }, { "name": "text", "data": "（1984-），男，吉林长春人，博士，研究员，博士生导师，2012 年于吉林大学获得博士学位，主要从事高速VCSEL和光子晶体激光器的研究。 " } ] ] } ], "email": "tiansicong@ciomp.ac.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "韩", "givenname": "赛一", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HAN", "givenname": "Sai-yi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "潘", "givenname": "绍驰", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "PAN", "givenname": "Shao-chi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "MANSOOR", "givenname": "Ahamed", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "MANSOOR", "givenname": "Ahamed", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "佟", "givenname": "存柱", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "TONG", "givenname": "Cun-zhu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "立军", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Li-jun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "BIMBERG", "givenname": "Dieter", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "BIMBERG", "givenname": "Dieter", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff4", "text": "4" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "中国科学院长春光学精密机械与物理研究所 Bimberg中德绿色光子学研究中心， 吉林 长春　130033", "data": [ { "name": "text", "data": "中国科学院长春光学精密机械与物理研究所 Bimberg中德绿色光子学研究中心， 吉林 长春　130033" } ] }, { "lang": "en", "label": "1", "text": "Bimberg Sino-German Green Photonics Research Center， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences， Changchun 130033， China", "data": [ { "name": "text", "data": "Bimberg Sino-German Green Photonics Research Center， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences， Changchun 130033， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院大学， 北京　100049", "data": [ { "name": "text", "data": "中国科学院大学， 北京　100049" } ] }, { "lang": "en", "label": "2", "text": "University of Chinese Academy of Sciences， Beijing 100049， China", "data": [ { "name": "text", "data": "University of Chinese Academy of Sciences， Beijing 100049， China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室， 吉林 长春　130033", "data": [ { "name": "text", "data": "中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室， 吉林 长春　130033" } ] }, { "lang": "en", "label": "3", "text": "State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences， Changchun 130033， China", "data": [ { "name": "text", "data": "State Key Laboratory of Luminescence and Applications， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences， Changchun 130033， China" } ] } ] }, { "id": "aff4", "intro": [ { "lang": "zh", "label": "4", "text": "柏林工业大学固体物理研究所 纳米光学中心， 德国 柏林　D‐10623", "data": [ { "name": "text", "data": "柏林工业大学固体物理研究所 纳米光学中心， 德国 柏林　D‐10623" } ] }, { "lang": "en", "label": "4", "text": "Center for Nano-Optics， Institute of Solid State Physics， Technical University of Berlin， Berlin D-10623， Germany", "data": [ { "name": "text", "data": "Center for Nano-Optics， Institute of Solid State Physics， Technical University of Berlin， Berlin D-10623， Germany" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "制备了不同氧化孔径的940 nm垂直腔面发射激光器（VCSEL），选取氧化孔径为3，6，9 μm的VCSEL进行了测试表征分析。氧化孔径为3，6，9 μm的VCSEL的最高输出功率分别为2.92，6.79，10.49 mW，调制带宽分别为27.65，23.34，20.56 GHz。此外，氧化孔径为3 μm的VCSEL在整个工作电流下都可实现单模工作，氧化孔径为6 μm和9 μm的VCSEL在较大电流下呈现少模和多模特性。最后，选取3 μm氧化孔径的VCSEL进行数据传输测试，在非归零（NRZ）码下实现了传输速率53 Gbit/s。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "940 nm vertical cavity surface emitting lasers（VCSELs） with different oxidation apertures were prepared. VCSELs with oxidation apertures of 3， 6，9 μm were tested and characterized. The maximum output power of VCSELs with oxidation aperture of 3， 6，9 μm is 2.92， 6.79，10.49 mW， respectively， and the modulation bandwidth of them is 27.65， 23.34， 20.56 GHz， respectively. In addition， VCSELs with an oxidation aperture of 3 μm can achieve single-mode operation under the whole working current， and VCSELs with an oxidation aperture of 6 μm and 9 μm show few mode and multi-mode characteristics under large current.Finally, VCSEL with oxidation apertures of 3 μm is selected for data transmission test, and the transmission rate of 53 Gbit/s under not return to zero(NRZ) is realized." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "垂直腔面发射激光器" } ], [ { "name": "text", "data": "高速" } ], [ { "name": "text", "data": "单模" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "vertical cavity surface emitting laser（VCSEL）" } ], [ { "name": "text", "data": "high speed" } ], [ { "name": "text", "data": "single mode" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "近些年来，随着通信技术的高速发展、网络的快速普及，数据流量也呈现高速增长的态势。面对大量的数据流量，特别是数据中心之间快速的数据传输" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，提高数据传输速率变得尤为重要。随着数据传输流量增长对数据速率提出越来越高的要求，电互联所能提供的高速传输性能并不能满足人们对于传输速率越来越高的要求" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而光互连与传统的电互联相比，具有高速和低能耗的优点，在各性能方面都遥遥领先，尤其是在传输速率上。VCSEL具有调制速率高、体积小、阈值低、易耦合、易成阵列、出光方向好且成本低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "的特点，是短距离高速光互联的主要光源之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "与850 nm相比，940 nm的VCSEL受温度影响更小，有更低的色散、更低的传输损耗、更高的光电探测器灵敏度，也对眼睛更加安全" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2016年，Lavrencik等研制了有25 GHz调制带宽的940 nm VCSEL" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2017年，Chi等利用锌离子扩散以及氧化物浮雕孔实现了在85 ℃下还有近30 GHz的带宽" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2018年，Agustín等利用OM5光纤在非归零（NRZ）码传输下达到了50 Gb/s的传输速率，调制带宽在26~28 GHz" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。同年，Lavrencik等在利用四脉冲幅度调制（PAM-4）技术情况下传输速率可以超过100 Gbit/s" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Cheng等在2019年制备的VCSEL采用了氧化限制型的直径为3 μm的氧化孔，在百米光纤中的传输速率达到了50 Gbit/s" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2020年，Khan等优化氧化孔径并利用锌扩散和氧化物浮雕技术实现了高功率单模VCSEL，其功率可达到7.1 mW，调制带宽可以达到15 GHz，并在400 m的OM5光纤上实现25 Gbit/s的无误码传输（85 ℃）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "VCSEL的横向结构远大于纵向结构，因此VCSEL容易产生多个横模。在光纤传输中，多模激光的色散比单模激光更大，进而对VCSEL的传输距离以及传输速率造成影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。单模的VCSEL可以获得更长的传输距离、更高的能量效率，同时也更加适合通过波分复用技术（WDM）来提高传输速率。2019年，Larisch等利用粗波分复用（CWDM）技术在单根OM5光纤上达到了200+Gbit/s的传输速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。除此之外，单模VCSEL具有更小的孔径和光斑尺寸，更适合将光耦合进标准光纤" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，基于单模VCSEL的多模光纤（MMF）链路可以在数据中心的传输中获得更高的传输速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了获得单模VCSEL，有许多种不同的实现横向光学和电流限制方法" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中利用湿法氧化制备氧化孔并通过氧化孔进行限制是目前获得高速单模VCSEL最为简单的方式" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "目前，高速单模940 nm VCSEL研究较少。针对高速单模940 nm VCSEL的应用价值，我们制备了不同氧化孔径的940 nm VCSEL，研究了VCSEL氧化孔径对其调制带宽、模式和输出功率的影响。在3，6，9 μm的氧化孔径下实现了单模、少模、多模（SM、FM、MM）的VCSEL。3，6，9 μm氧化孔径的VCSEL的最高输出功率分别为2.92，6.79，10.49 mW，调制带宽分别为27.65，23.34，20.56 GHz。最后，我们在3 μm氧化孔径VCSEL中实现了非归零（NRZ）调制下53 Gbit/s的传输速率。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　高速氧化限制型940 nm VCSEL结构" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "本文所制备的VCSEL的横截面如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）所示，其结构从上到下依次为P电极、P型接触层、P型分布布拉格反射镜（DBR）、上氧化层、有源区、下氧化层、N型DBR、N型接触层、共面电极以及衬底。制备完成后的VCSEL如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "（a）VCSEL横截面；（b）制备完成后的VCSEL。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "（a）Cross section of VCSEL. （b）VCSEL device after preparation." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863206&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863220&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863215&type=", "width": "70.02612305", "height": "125.89932251", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "因为VCSEL的腔长非常短，所以需要高反射率的反射镜来获得足够的光学增益，通常采用多对半导体DBR" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中上DBR与下DBR为两种不同铝组分的Al" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" } ] }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As层交替生长，为了减小DBR界面处的势垒电阻，在两层DBR之间加入一层组分线性渐变层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。下DBR的反射率接近100%，而上DBR的反射率比下DBR略低以作为激光的出射镜。为降低热阻，在下DBR上选择使用二元化合物AlAs。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "湿法氧化是VCSEL芯片制造中最关键的工艺，氧化孔径的大小将直接关系到最终芯片的质量与性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。VCSEL几乎不会出现多纵模，但是很容易出现高阶横模" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了减少高阶横模，制作单模以及少模VCSEL，需要限制载流子和光子的侧向扩散" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。上下氧化层都是采用的Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.98" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.02" } ] }, { "name": "text", "data": "As，因为AlAs氧化速率极快且氧化后收缩率较高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，很容易造成氧化层开裂。制备的上台面直径为16 ~32 μm不等，氧化结束后可以得到多个氧化孔从小依次变大的VCSEL。氧化时氧化炉通入带有水蒸气的高温氮气对芯片进行氧化，通过红外摄像机观察氧化深度直到最小的台面的氧化孔径为1~2 μm，而最大的台面依然保留较大的氧化孔径（大于10 μm）。为了确定更加准确的氧化深度，还可以将芯片解离，通过SEM观察切面确定氧化深度。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　高速940 nm VCSEL性能测试表征" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "高速VCSEL性能测试表征分为静态参数测试表征（功率" }, { "name": "italic", "data": [ { "name": "text", "data": "‐" } ] }, { "name": "text", "data": "电流" }, { "name": "italic", "data": [ { "name": "text", "data": "‐" } ] }, { "name": "text", "data": "电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "L‐I‐V" } ] }, { "name": "text", "data": "）和光谱）和动态参数测试表征（小信号响应和数据传输）。测试系统使用GSG探针，三个探针分别压在VCSEL对应的GSG电极上。在获得" }, { "name": "italic", "data": [ { "name": "text", "data": "L‐I‐V" } ] }, { "name": "text", "data": "曲线后，以" }, { "name": "italic", "data": [ { "name": "text", "data": "L‐I‐V" } ] }, { "name": "text", "data": "曲线为基础，用光纤将激光导入光谱仪，分别测得在不同电流下的光谱以及激射的模式数量。并计算单模VCSEL的边模抑制比（SMSR），当边模抑制比大于30 dB时即可认为此时VCSEL为单模。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　高速940 nm VCSEL的输出功率和电压" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "我们首先通过调节电流源获得功率" }, { "name": "italic", "data": [ { "name": "text", "data": "‑" } ] }, { "name": "text", "data": "电流（" }, { "name": "italic", "data": [ { "name": "text", "data": "L‑I" } ] }, { "name": "text", "data": "）、电压" }, { "name": "italic", "data": [ { "name": "text", "data": "‑" } ] }, { "name": "text", "data": "电流（" }, { "name": "italic", "data": [ { "name": "text", "data": "V‑I" } ] }, { "name": "text", "data": "）曲线。当功率下降了10%以上时停止测试，功率最大时的电流即为反转电流。我们测试了氧化孔径分别为3，6，9 μm（氧化孔径存在±0.5 μm的误差）的VCSEL的" }, { "name": "italic", "data": [ { "name": "text", "data": "L‐I" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "V‐I" } ] }, { "name": "text", "data": "曲线、功率" }, { "name": "italic", "data": [ { "name": "text", "data": "‑" } ] }, { "name": "text", "data": "电流密度曲线，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同氧化孔径VCSEL在室温（25 ℃）下的" }, { "name": "italic", "data": [ { "name": "text", "data": "L‐I" } ] }, { "name": "text", "data": "曲线（a）、功率" }, { "name": "italic", "data": [ { "name": "text", "data": "‐" } ] }, { "name": "text", "data": "电流密度曲线（b）、" }, { "name": "italic", "data": [ { "name": "text", "data": "V‐I" } ] }, { "name": "text", "data": "曲线（c）。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Curves of VCSEL with different aperture diameter at room temperature（25 ℃）. （a）" }, { "name": "italic", "data": [ { "name": "text", "data": "L‐I" } ] }, { "name": "text", "data": " curve. （b）Outpower-current density curve. （c）" }, { "name": "italic", "data": [ { "name": "text", "data": "V‐I " } ] }, { "name": "text", "data": "curve." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863226&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863234&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863230&type=", "width": "55.40618896", "height": "135.08435059", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）为" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "曲线，因为相同电流下小的氧化孔径可以获得更高的电流密度，所以阈值电流（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "）随着孔径的增大而增加。3 μm VCSEL的阈值电流仅为0.37 mA，与之相对的，6 μm VCSEL和9 μm VCSEL的阈值电流增加到0.9 mA和1.4 mA。通过对" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "曲线的线性部分进行拟合并计算出三种VCSEL的斜率效率分别为：3 μm VCSEL的1 W/A，6 μm VCSEL的0.9 W/A，9 μm VCSEL的0.9 W/A。三种VCSEL的斜率效率接近，但是孔径的减小会导致散热问题加剧、同电流下电流密度更高。小孔径VCSEL在较小的电流下就会发生载流子和电流泄漏，进而在较小的电流下就会达到光功率饱和。最小孔径的3 μm VCSEL最高功率为2.92 mW，而大孔径的6 μm与9 μm VCSEL分别可以达到6.79与10.49 mW。如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）所示，在相同电流密度下时，氧化孔径较大的VCSEL有着较高的功率，并且随着电流密度的增加，功率也增加得更快，会比氧化孔径较小的VCSEL更早地达到饱和功率。3 μm VCSEL在电流密度为66 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时达到饱和功率，而6 μm与9 μm VCSEL分别只需要在38 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "与26 kA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "时即可达到饱和功率。同时也可在" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（c）的" }, { "name": "italic", "data": [ { "name": "text", "data": "V⁃I" } ] }, { "name": "text", "data": "曲线中看到，当三种VCSEL在电流达到饱和前在相同电流下工作时，孔径较小的VCSEL有着较高的电流密度，同时也表现出较高的电压以及微分电阻。饱和电流下，3 μm VCSEL微分电阻为380 Ω，而6 μm与9 μm VCSEL的微分电阻分别为175 Ω与100 Ω。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　高速940 nm VCSEL的模式特性" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "我们使用光纤将VCSEL激光导入光谱仪，分别测得在不同电流下的光谱，结果如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。在3 μm VCSEL的光谱中（" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）），直到饱和电流前，在不同电流下都很好地保持着单模情况，且可以清晰地看出其波长随着电流的增加而不断发生红移。3 μm VCSEL不同电流下的单模抑制比如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b）所示，可以看到在不同电流下的边模抑制比（SMSR）均大于30 dB，在4 mA处仍达到 44.45 dB。这说明该激光器有着很好的单模特性。在" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（c）中可以看到6 μm VCSEL已经有两个模式发生激射，而第三个模式也即将出现，直到达到饱和电流（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "）时依旧能保持较少的模式数量，相比之下" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（d）中的9 μm VCSEL激射的模式已经超过10个。随着氧化孔径的增大，对高阶模式的限制逐渐减弱。因为氧化物限制区域的折射率低于中间的孔径部分，所以高阶模式会从短波长处开始出现" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "不同孔径不同模式数量VCSEL在室温（25 ℃）下的光谱。（a）3 μm孔径单模VCSEL；（b）3 μm孔径单模VCSEL在不同电流下的SMSR；（c）6 μm孔径少模VCSEL；（d）9 μm孔径多模VCSEL。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Spectra of VCSEL with different aperture and different mode number at room temperature（25 ℃）. （a）3 μm aperture single-mode VCSEL. （b）SMSR of 3 μm aperture single-mode VCSEL at different currents. （c）6 μm aperture few mode VCSEL. （d）9 μm aperture multimode VCSEL." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863238&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863246&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863243&type=", "width": "146.02752686", "height": "107.69409180", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　高速940 nm VCSEL的小信号响应" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "我们还测试了3，6，9 μm高速940 nm VCSEL的小信号响应。在小信号测量中利用矢量网络分析仪测量VCSEL在不同电流下的小信号响应并拟合得到VCSEL的3 dB带宽。不同孔径VCSEL的小信号调制带宽如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示，其横坐标为测试电流与阈值电流差的平方根，纵坐标为小信号调制带宽。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "不同孔径VCSEL在室温（25 ℃）下不同电流的小信号调制带宽" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Small signal modulation bandwidth of different aperture devices under different currents at room temperature（25 ℃）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863251&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863256&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863253&type=", "width": "56.30957031", "height": "48.49961853", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "随着电流的增大，小信号调制带宽随着电流的增加而增加，最大带宽往往出现在饱和电流前。氧化孔径较小的VCSEL有着更高的调制带宽。这是因为小氧化孔径VCSEL的有源区体积较小，而有源区体积的减小可以增大" }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "因子以及弛豫振荡频率，进而增大调制带宽" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。3 μm VCSEL最大可达到27.65 GHz，小信号调制带宽关于测试电流与阈值电流差的平方根的斜率（MCEF）为17.91 GHz/mA" }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": "。而6 μm与9 μm VCSEL最大带宽分别可以达到23.34 GHz与20.56 GHz，MCEF分别为10.08 GHz/mA" }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": "与7.09 GHz/mA" }, { "name": "sup", "data": [ { "name": "text", "data": "1/2" } ] }, { "name": "text", "data": "。三个VCSEL的参数如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "三个VCSEL的特性对比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Characteristic comparison of three VCSELs" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;border-left:solid;", "data": [ { "name": "text", "data": "孔径/μm" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "阈值电流/mA" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "翻转电流/mA" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "翻转功率/mA" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "翻转电压/mA" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "斜率效率/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（W·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "模式" } ] }, { "name": "p", "data": [ { "name": "text", "data": "数量" } ] } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "最大调制带宽/GHz" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;border-right:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "MCEF/" } ] }, { "name": "p", "data": [ { "name": "text", "data": "（GHz·mA" }, { "name": "sup", "data": [ { "name": "text", "data": "-1/2" } ] }, { "name": "text", "data": "）" } ] } ] } ] ], "body": [ [ { "align": "center", "style": "border-left:solid;", "data": [ { "name": "text", "data": "3" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.37" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.64" } ] }, { "align": "center", "data": [ { "name": "text", "data": "2.92" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.2" } ] }, { "align": "center", "data": [ { "name": "text", "data": "1" } ] }, { "align": "center", "data": [ { "name": "text", "data": "单模" } ] }, { "align": "center", "data": [ { "name": "text", "data": "27.65" } ] }, { "align": "center", "style": "border-right:solid;", "data": [ { "name": "text", "data": "17.91" } ] } ], [ { "align": "center", "style": "border-left:solid;", "data": [ { "name": "text", "data": "6" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.9" } ] }, { "align": "center", "data": [ { "name": "text", "data": "10.6" } ] }, { "align": "center", "data": [ { "name": "text", "data": "6.79" } ] }, { "align": "center", "data": [ { "name": "text", "data": "4.2" } ] }, { "align": "center", "data": [ { "name": "text", "data": "0.9" } ] }, { "align": "center", "data": [ { "name": "text", "data": "少模" } ] }, { "align": "center", "data": [ { "name": "text", "data": "23.34" } ] }, { "align": "center", "style": "border-right:solid;", "data": [ { "name": "text", "data": "10.08" } ] } ], [ { "align": "center", "style": "border-bottom:solid;border-left:solid;", "data": [ { "name": "text", "data": "9" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "1.4" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "16.6" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "10.49" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "4.1" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "0.9" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "多模" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "20.56" } ] }, { "align": "center", "style": "border-bottom:solid;border-right:solid;", "data": [ { "name": "text", "data": "7.09" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863260&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863259&type=", "width": "162.54333496", "height": "23.00000000", "fontsize": "" } } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　高速940 nm VCSEL的数据传输" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "最后，选取3 μm氧化孔径VCSEL进行数据传输测试。调制信号由码型发生器（BPG）产生，信号是一个字长为2" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "-1的伪随机二进制序列。通过长度3 m多模光纤耦合VCSEL的光信号。光信号由光电探测器转换为电信号，然后通过示波器来进行测量。通过参数优化，在3.5 mA工作电流、1 V调制电压下实现了53 Gbit/s的数据传输眼图，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）所示。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）中浴盆曲线在误码率（BER）为10" }, { "name": "sup", "data": [ { "name": "text", "data": "-12" } ] }, { "name": "text", "data": "处可以看到眼睛张开幅度约有0.25 UI（4.72 ps），总抖动为75%（14.15 ps）。6 μm与9 μm VCSEL的调制带宽稍低，传输速率则低于3 μm VCSEL，这里不再给出传输眼图。未来我们还将继续研究利用PAM-4技术来提升该单模940 nm VCSEL的传输速率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "（a）3 μm VCSEL 53 Gbit/s数据传输速率在室温（25 ℃）下的眼图；（b）3 μm VCSEL 53 Gbit/s数据传输速率在室温（25 ℃）下的浴盆曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "（a）Eye diagram at 53 Gbit/s modulation rate of 3 μm VCSEL at room temperature（25 ℃）. （b）Bathtub curve at 53 Gbit/s modulation rate of 3 μm VCSEL at room temperature（25 ℃）." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863262&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863266&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35863264&type=", "width": "125.19201660", "height": "51.90794373", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文制备了氧化孔径不同的940 nm VCSEL，并在3，6，9 μm VCSEL中分别实现了单模、少模和多模激射。随着VCSEL的孔径增加，阈值电流逐渐增大，饱和功率逐渐增大，激射的模式逐渐增多，调制带宽逐渐降低，最高的传输速率在3 μm VCSEL上获得。当3 μm VCSEL工作在3.5 mA调制电流、1 V调制电压下时，实现了NRZ调制下53 Gbit/s的传输速率。目前，虽然能够在小孔径VCSEL中获得单模输出和较高的调制带宽与传输速率，但是小孔径VCSEL饱和功率较低。可以通过优化外延结构、VCSEL结构、制备工艺等进一步提高单模VCSEL的功率、带宽以及传输速率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL. 20220106." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220106." } } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HUANG C Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "TSAI C T" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WENG J H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Temperature and noise dependence of tri-mode VCSEL carried 120-Gbit/s QAM-OFDM data in back-to-back and OM5-MMF links" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Lightwave Technol." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "38" }, { "name": "text", "data": "（" }, { "name": "text", "data": "24" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "6746" }, { "name": "text", "data": "-" }, { "name": "text", "data": "6758" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/jlt.2020.3017798" } ], "href": "http://dx.doi.org/10.1109/jlt.2020.3017798" } } ], "title": "Temperature and noise dependence of tri-mode VCSEL carried 120-Gbit/s QAM-OFDM data in back-to-back and OM5-MMF links" } ] }, { "id": "R2", "label": "2", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MANGASER R" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ROSE K" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Estimating interconnect performance for a new national technology roadmap for semiconductors" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "Proceedings of IEEE 1998 International Interconnect Technology Conference" }, { "name": "text", "data": "，" }, { "name": "text", "data": "San Francisco，CA，USA" }, { "name": "text", "data": "， " }, { "name": "text", "data": "1998" }, { "name": "text", "data": "：" }, { "name": "text", "data": "253" }, { "name": "text", "data": "-" }, { "name": "text", "data": "255" }, { "name": "text", "data": "." } ], "title": "Estimating interconnect performance for a new national technology roadmap for semiconductors" } ] }, { "id": "R3", "label": "3", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GUSTAVSSON J S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LARSSON A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "HAGLUND Å" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High speed 850 nm VCSELs for >40 Gb/s transmission" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "Proceedings of 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference" }, { "name": "text", "data": "，" }, { "name": "text", "data": "Anaheim，CA，USA" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2013" }, { "name": "text", "data": "：" }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/ofc.2013.oth4h.4" } ], "href": "http://dx.doi.org/10.1364/ofc.2013.oth4h.4" } } ], "title": "High speed 850 nm VCSELs for >40 Gb/s transmission" } ] }, { "id": "R4", "label": "4", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHENG C H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "SHEN C C" }, { "name": "text", "data": "，" }, { "name": "text", "data": "KAO H Y" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "850/940-nm VCSEL for optical communication and 3D sensing" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Opto-Electron. Adv." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "，" }, { "name": "text", "data": "1" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "180005-1-11" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.29026/oea.2018.180005" } ], "href": "http://dx.doi.org/10.29026/oea.2018.180005" } } ], "title": "850/940-nm VCSEL for optical communication and 3D sensing" } ] }, { "id": "R5", "label": "5", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU A J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WOLF P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LOTT J A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Vertical-cavity surface-emitting lasers for data communication and sensing" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Photonics Res." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "，" }, { "name": "text", "data": "7" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "121" }, { "name": "text", "data": "-" }, { "name": "text", "data": "136" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/prj.7.000121" } ], "href": "http://dx.doi.org/10.1364/prj.7.000121" } } ], "title": "Vertical-cavity surface-emitting lasers for data communication and sensing" } ] }, { "id": "R6", "label": "6", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LAVRENCIK J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "VARUGHESE S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "THOMAS V A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "2" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": " × 100 Gbps PAM-4 wideband fiber 100 m links using 850 nm and 940 nm VCSELs" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "Proceedings of 2016 Photonics Conference" }, { "name": "text", "data": "，" }, { "name": "text", "data": "Waikoloa，HI，USA" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2016" }, { "name": "text", "data": "：" }, { "name": "text", "data": "751" }, { "name": "text", "data": "-" }, { "name": "text", "data": "752" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/ipcon.2016.7831299" } ], "href": "http://dx.doi.org/10.1109/ipcon.2016.7831299" } } ], "title": "2λ × 100 Gbps PAM-4 wideband fiber 100 m links using 850 nm and 940 nm VCSELs" } ] }, { "id": "R7", "label": "7", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHI K L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "XIE Z T" }, { "name": "text", "data": "，" }, { "name": "text", "data": "SHI J W" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-speed Zn-diffusion/oxide-relief VCSELs with stable high-temperature performance at 940 nm wavelength" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "Proceedings of 2017 IEEE Photonics Conference" }, { "name": "text", "data": "，" }, { "name": "text", "data": "Orlando，FL，USA" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "：" }, { "name": "text", "data": "63" }, { "name": "text", "data": "-" }, { "name": "text", "data": "64" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/ipcon.2017.8116008" } ], "href": "http://dx.doi.org/10.1109/ipcon.2017.8116008" } } ], "title": "High-speed Zn-diffusion/oxide-relief VCSELs with stable high-temperature performance at 940 nm wavelength" } ] }, { "id": "R8", "label": "8", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "AGUSTIN M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LEDENTSOV JR N" }, { "name": "text", "data": "，" }, { "name": "text", "data": "KROPP J R" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "50 Gb/s NRZ and 4-PAM data transmission over OM5 fiber in the SWDM wavelength range" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "Proceedings of SPIE 10552" }, { "name": "text", "data": "，" }, { "name": "text", "data": "Vertical-cavity Surface-emitting Lasers ⅩⅩⅡ，San Francisco，California，United States" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "：" }, { "name": "text", "data": "1055202-1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "8" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1117/12.2289823" } ], "href": "http://dx.doi.org/10.1117/12.2289823" } } ], "title": "50 Gb/s NRZ and 4-PAM data transmission over OM5 fiber in the SWDM wavelength range" } ] }, { "id": "R9", "label": "9", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LAVRENCIK J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "VARUGHESE S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "THOMAS V A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Scaling VCSEL-MMF links to 1 Tb/s using short wavelength division multiplexing" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "J. Lightwave Technol." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "，" }, { "name": "text", "data": "36" }, { "name": "text", "data": "（" }, { "name": "text", "data": "18" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "4138" }, { "name": "text", "data": "-" }, { "name": "text", "data": "4145" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/jlt.2018.2858208" } ], "href": "http://dx.doi.org/10.1109/jlt.2018.2858208" } } ], "title": "Scaling VCSEL-MMF links to 1 Tb/s using short wavelength division multiplexing" } ] }, { "id": "R10", "label": "10", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHENG C L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LEDENTSOV N" }, { "name": "text", "data": "，" }, { "name": "text", "data": "AGUSTIN M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ultra-fast Zn-diffusion/oxide-relief 940 nm VCSELs" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "Proceedings of 2019 Optical Fiber Communications Conference and Exhibition" }, { "name": "text", "data": "，" }, { "name": "text", "data": "San Diego，CA，USA" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "：" }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/ofc.2019.w3a.2" } ], "href": "http://dx.doi.org/10.1364/ofc.2019.w3a.2" } } ], "title": "Ultra-fast Zn-diffusion/oxide-relief 940 nm VCSELs" } ] }, { "id": "R11", "label": "11", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KHAN Z" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LEDENTSOV N" }, { "name": "text", "data": "，" }, { "name": "text", "data": "CHORCHOS L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Single-mode 940 nm VCSELs with narrow divergence angles and high-power performances for fiber and free-space optical communications" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "IEEE Access" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "8" }, { "name": "text", "data": "：" }, { "name": "text", "data": "72095" }, { "name": "text", "data": "-" }, { "name": "text", "data": "72101" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/access.2020.2987818" } ], "href": "http://dx.doi.org/10.1109/access.2020.2987818" } } ], "title": "Single-mode 940 nm VCSELs with narrow divergence angles and high-power performances for fiber and free-space optical communications" } ] }, { "id": "R12", "label": "12", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GHOLAMI A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "MOLIN D" }, { "name": "text", "data": "，" }, { "name": "text", "data": "SILLARD P" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Compensation of chromatic dispersion by modal dispersion in MMF- and VCSEL-based gigabit Ethernet transmissions" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "IEEE Photonics Technol. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2009" }, { "name": "text", "data": "，" }, { "name": "text", "data": "21" }, { "name": "text", "data": "（" }, { "name": "text", "data": "10" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "645" }, { "name": "text", "data": "-" }, { "name": "text", "data": "647" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/lpt.2009.2015891" } ], "href": "http://dx.doi.org/10.1109/lpt.2009.2015891" } } ], "title": "Compensation of chromatic dispersion by modal dispersion in MMF- and VCSEL-based gigabit Ethernet transmissions" } ] }, { "id": "R13", "label": "13", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LARISCH G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ROSALES R" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LOTT J A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Energy-efficient VCSELs for 200+ Gb/s optical interconnects" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "Proceedings of CLEO" }, { "name": "text", "data": "：" }, { "name": "text", "data": "Science and Innovations" }, { "name": "text", "data": " " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "，" }, { "name": "text", "data": "San Jose" }, { "name": "text", "data": "，" }, { "name": "text", "data": "California" }, { "name": "text", "data": "，" }, { "name": "text", "data": "United States" }, { "name": "text", "data": "， 2019：" }, { "name": "text", "data": "SM4N.7" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/cleo_si.2019.sm4n.7" } ], "href": "http://dx.doi.org/10.1364/cleo_si.2019.sm4n.7" } } ], "title": "Energy-efficient VCSELs for 200+ Gb/s optical interconnects" } ] }, { "id": "R14", "label": "14", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LARISCH G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "JUAREZ A A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "CHEN X" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "910 nm single-mode VCSELs and its application for few-mode transmission over graded-index single-mode fibers" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "Proceedings of the 2020 22nd International Conference on Transparent Optical Networks （ICTON）" }, { "name": "text", "data": "，" }, { "name": "text", "data": "Bari，Italy" }, { "name": "text", "data": "，" }, { "name": "text", "data": "2020" }, { "name": "text", "data": "：" }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "4" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/icton51198.2020.9203345" } ], "href": "http://dx.doi.org/10.1109/icton51198.2020.9203345" } } ], "title": "910 nm single-mode VCSELs and its application for few-mode transmission over graded-index single-mode fibers" } ] }, { "id": "R15", "label": "15", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG H L" }, { "name": "text", "data": "，" }, { "name": "text", "data": "QIU J Y" }, { "name": "text", "data": "，" }, { "name": "text", "data": "YU X" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "The modal effect of VCSELs on transmitting data rate over distance in OM4 fiber" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "IEEE J. Quantum Electron." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "56" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "8000106-1-6" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/jqe.2020.3022360" } ], "href": "http://dx.doi.org/10.1109/jqe.2020.3022360" } } ], "title": "The modal effect of VCSELs on transmitting data rate over distance in OM4 fiber" } ] }, { "id": "R16", "label": "16", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "刘安金" }, { "name": "text", "data": ". " }, { "name": "text", "data": "单模直调垂直腔面发射激光器研究进展" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "中国激光" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "47" }, { "name": "text", "data": "（" }, { "name": "text", "data": "7" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "0701005-1-22" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3788/cjl202047.0701005" } ], "href": "http://dx.doi.org/10.3788/cjl202047.0701005" } } ], "title": "单模直调垂直腔面发射激光器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "LIU A J" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Progress in single-mode and directly modulated vertical-cavity surface-emitting lasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lasers" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "47" }, { "name": "text", "data": "（" }, { "name": "text", "data": "7" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "0701005-1-22" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3788/cjl202047.0701005" } ], "href": "http://dx.doi.org/10.3788/cjl202047.0701005" } } ], "title": "Progress in single-mode and directly modulated vertical-cavity surface-emitting lasers" } ] }, { "id": "R17", "label": "17", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WANG C Y" }, { "name": "text", "data": "，" }, { "name": "text", "data": "FENG M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "50 Gb/s error-free data transmission of 850 nm oxide-confined VCSELs" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "Proceedings of 2016 Optical Fiber Communications Conference and Exhibition" }, { "name": "text", "data": "，" }, { "name": "text", "data": "Anaheim，CA，USA" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2016" }, { "name": "text", "data": "：" }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/ofc.2016.tu3d.2" } ], "href": "http://dx.doi.org/10.1364/ofc.2016.tu3d.2" } } ], "title": "50 Gb/s error-free data transmission of 850 nm oxide-confined VCSELs" } ] }, { "id": "R18", "label": "18", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "QIU P P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WU B" }, { "name": "text", "data": "，" }, { "name": "text", "data": "FU P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Fabrication and characterization of low-threshold single fundamental mode VCSELs with dielectric DBR mirror" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "IEEE Photonics J." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2021" }, { "name": "text", "data": "，" }, { "name": "text", "data": "13" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "1500106-1-6" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/jphot.2021.3089710" } ], "href": "http://dx.doi.org/10.1109/jphot.2021.3089710" } } ], "title": "Fabrication and characterization of low-threshold single fundamental mode VCSELs with dielectric DBR mirror" } ] }, { "id": "R19", "label": "19", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LARSSON A" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WESTBERGH P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "GUSTAVSSON J" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-speed VCSELs for short reach communication" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Semicond. Sci. Technol." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2011" }, { "name": "text", "data": "，" }, { "name": "text", "data": "26" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "014017-1-5" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1088/0268-1242/26/1/014017" } ], "href": "http://dx.doi.org/10.1088/0268-1242/26/1/014017" } } ], "title": "High-speed VCSELs for short reach communication" } ] }, { "id": "R20", "label": "20", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MOSER P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WOLF P" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LARISCH G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Energy-efficient oxide-confined high-speed VCSELs for optical interconnects" }, { "name": "text", "data": " ［C］. " }, { "name": "text", "data": "Proceedings of SPIE 9001" }, { "name": "text", "data": "，" }, { "name": "text", "data": "Vertical-cavity Surface-emitting Lasers ⅩⅤⅢ，San Francisco，California，United States" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2014" }, { "name": "text", "data": "：" }, { "name": "text", "data": "9001-1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "8" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1117/12.2044319" } ], "href": "http://dx.doi.org/10.1117/12.2044319" } } ], "title": "Energy-efficient oxide-confined high-speed VCSELs for optical interconnects" } ] }, { "id": "R21", "label": "21", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "李秀山" }, { "name": "text", "data": ". " }, { "name": "text", "data": "垂直腔面发射激光器高阶模式及偏振控制" }, { "name": "text", "data": " ［D］. " }, { "name": "text", "data": "长春" }, { "name": "text", "data": "：" }, { "name": "text", "data": "中国科学院长春光学精密机械与物理研究所" }, { "name": "text", "data": "，" }, { "name": "text", "data": "2015" }, { "name": "text", "data": "." } ], "title": "垂直腔面发射激光器高阶模式及偏振控制" }, { "lang": "en", "text": [ { "name": "text", "data": "LI X S" }, { "name": "text", "data": ". " }, { "name": "italic", "data": [ { "name": "text", "data": "Polarization and High" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "order Mode Control of Vertical Cavity Surface Emitting Lasers" } ] }, { "name": "text", "data": " ［D］. " }, { "name": "text", "data": "Changchun" }, { "name": "text", "data": "：" }, { "name": "text", "data": "Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Polarization and High-order Mode Control of Vertical Cavity Surface Emitting Lasers" } ] }, { "id": "R22", "label": "22", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "刘莹莹" }, { "name": "text", "data": ". " }, { "name": "text", "data": "垂直腔面发射激光器的偏振控制及两模面发射激光器的研究" }, { "name": "text", "data": " ［D］. " }, { "name": "text", "data": "长春" }, { "name": "text", "data": "：" }, { "name": "text", "data": "中国科学院长春光学精密机械与物理研究所" }, { "name": "text", "data": "，" }, { "name": "text", "data": "2019" }, { "name": "text", "data": "." } ], "title": "垂直腔面发射激光器的偏振控制及两模面发射激光器的研究" }, { "lang": "en", "text": [ { "name": "text", "data": "LIU Y Y" }, { "name": "text", "data": ". " }, { "name": "italic", "data": [ { "name": "text", "data": "Study on Polarization Control of Vertical" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "cavity Surface" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "emitting Lasers and Two" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "modes VCSEL" } ] }, { "name": "text", "data": " ［D］. " }, { "name": "text", "data": "Changchun" }, { "name": "text", "data": "：" }, { "name": "text", "data": "Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" } ], "title": "Study on Polarization Control of Vertical-cavity Surface-emitting Lasers and Two-modes VCSEL" } ] }, { "id": "R23", "label": "23", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHOQUETTE K D" }, { "name": "text", "data": "，" }, { "name": "text", "data": "GEIB K M" }, { "name": "text", "data": "，" }, { "name": "text", "data": "ASHBY C I H" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Advances in selective wet oxidation of AlGaAs alloys" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "IEEE J. Sel. Top. Quantum Electron." }, { "name": "text", "data": "， " }, { "name": "text", "data": "1997" }, { "name": "text", "data": "，" }, { "name": "text", "data": "3" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "916" }, { "name": "text", "data": "-" }, { "name": "text", "data": "926" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1109/2944.640645" } ], "href": "http://dx.doi.org/10.1109/2944.640645" } } ], "title": "Advances in selective wet oxidation of AlGaAs alloys" } ] }, { "id": "R24", "label": "24", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "PENG C Y" }, { "name": "text", "data": "，" }, { "name": "text", "data": "TSAO K" }, { "name": "text", "data": "，" }, { "name": "text", "data": "CHENG H T" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Investigation of the current influence on near-field and far-field beam patterns for an oxide-confined vertical-cavity surface-emitting laser" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Opt. Express" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "28" }, { "name": "text", "data": "（" }, { "name": "text", "data": "21" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "30748" }, { "name": "text", "data": "-" }, { "name": "text", "data": "30759" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/oe.397878" } ], "href": "http://dx.doi.org/10.1364/oe.397878" } } ], "title": "Investigation of the current influence on near-field and far-field beam patterns for an oxide-confined vertical-cavity surface-emitting laser" } ] }, { "id": "R25", "label": "25", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "TAUBER D" }, { "name": "text", "data": "，" }, { "name": "text", "data": "WANG G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "GEELS R S" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Large and small signal dynamics of vertical cavity surface emitting lasers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "1993" }, { "name": "text", "data": "，" }, { "name": "text", "data": "62" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "325" }, { "name": "text", "data": "-" }, { "name": "text", "data": "327" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1063/1.108947" } ], "href": "http://dx.doi.org/10.1063/1.108947" } } ], "title": "Large and small signal dynamics of vertical cavity surface emitting lasers" } ] }, { "id": "R26", "label": "26", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "杨卓凯" }, { "name": "text", "data": "，" }, { "name": "text", "data": "田思聪" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LARISCH Gunter" }, { "name": "text", "data": "，" }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "基于PAM4调制的高速垂直腔面发射激光器研究进展" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "41" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "399" }, { "name": "text", "data": "-" }, { "name": "text", "data": "413" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3788/fgxb20204104.0399" } ], "href": "http://dx.doi.org/10.3788/fgxb20204104.0399" } } ], "title": "基于PAM4调制的高速垂直腔面发射激光器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "YANG Z K" }, { "name": "text", "data": "，" }, { "name": "text", "data": "TIAN S C" }, { "name": "text", "data": "，" }, { "name": "text", "data": "LARISCH G" }, { "name": "text", "data": "，" }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-speed vertical-cavity surface-emitting lasers based on PAM4 modulation" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "，" }, { "name": "text", "data": "41" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "399" }, { "name": "text", "data": "-" }, { "name": "text", "data": "413" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3788/fgxb20204104.0399" } ], "href": "http://dx.doi.org/10.3788/fgxb20204104.0399" } } ], "title": "High-speed vertical-cavity surface-emitting lasers based on PAM4 modulation" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20220106", "clc": [ [ { "name": "text", "data": "TN248.4" } ], [ { "name": "text", "data": "TP394.1" } ], [ { "name": "text", "data": "TH691.9" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032（2022）07-1114-07", "citeme": [ { "data": [ { "name": "text", "data": "徐汉阳,田思聪,韩赛一等.53 Gbit/s高速单模940 nm垂直腔面发射激光器[J].发光学报,2022,43(07):1114-1120." } ], "text": "徐汉阳,田思聪,韩赛一等.53 Gbit/s高速单模940 nm垂直腔面发射激光器[J].发光学报,2022,43(07):1114-1120." }, { "data": [ { "name": "text", "data": "XU Han-yang,TIAN Si-cong,HAN Sai-yi,et al.53 Gbit/s High Speed Single Mode 940 nm Vertical-cavity Surface-emitting Laser[J].Chinese Journal of Luminescence,2022,43(07):1114-1120." } ], "text": "XU Han-yang,TIAN Si-cong,HAN Sai-yi,et al.53 Gbit/s High Speed Single Mode 940 nm Vertical-cavity Surface-emitting Laser[J].Chinese Journal of Luminescence,2022,43(07):1114-1120." } ], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家重点研发计划（2018YFB2201000，2021YFB2801000）； 国家自然科学基金（61774156，62174159，62061136010）； 中国科学院青年创新促进会（2018249）； 中德科学中心合作交流项目M0386； 吉林省国际合作项目（20210402055GH）资助" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by National Key R&D Program of China（2018YFB2201000，2021YFB2801000）； National Natural Science Foundation of China（61774156，62174159，62061136010）； CAS Youth Innovation Promotion Association（2018249）； Sino⁃German Center for Research Promotion（Joint Mobility Program of DFG and NSFC M0386）； International Cooperation Project of Jilin Province （20210402055GH）" } ] } ], "history": { "received": "2022-03-26", "revised": "2022-04-10", "ppub": "2022-07-05", "opub": "2022-10-19" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "7", "volume": "43", "originalSource": [] }