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砷化镓热氧化法制备β⁃Ga2O3体块薄膜
材料合成及性能 | 更新时间：2022-08-01
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砷化镓热氧化法制备β⁃Ga2O3体块薄膜 增强出版
- β-Ga2O3 Bulk Films Prepared by Thermal Oxidation of GaAs
- 发光学报 2022年 43卷 第7期 (2022)
- 作者机构：吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室,吉林,长春,130012
- 作者简介：
- 基金信息：国家自然科学基金(61774072)
- DOI：10.37188/CJL.20210399 中图分类号： O482.31
纸质出版日期：2022-07-05，
收稿日期：2021-12-20，
修回日期：2022-01-05，
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引用本文
刁肇悌,陈威,董鑫等.砷化镓热氧化法制备β⁃Ga2O3体块薄膜[J].发光学报,2022,43(07):1095-1101.
DIAO Zhao-ti,CHEN Wei,DONG Xin,et al.β-Ga2O3 Bulk Films Prepared by Thermal Oxidation of GaAs[J].Chinese Journal of Luminescence,2022,43(07):1095-1101.
刁肇悌,陈威,董鑫等.砷化镓热氧化法制备β⁃Ga2O3体块薄膜[J].发光学报,2022,43(07):1095-1101. DOI： 10.37188/CJL.20210399.
DIAO Zhao-ti,CHEN Wei,DONG Xin,et al.β-Ga2O3 Bulk Films Prepared by Thermal Oxidation of GaAs[J].Chinese Journal of Luminescence,2022,43(07):1095-1101. DOI： 10.37188/CJL.20210399.
砷化镓热氧化法制备β⁃Ga2O3体块薄膜 增强出版
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{
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"data": "flow rate was low（0.2 L/min）， GaAs substrate was in anoxic state， and the prepared samples showed nanolinear morphology. However， when the flow rate of O"
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"data": " bulk film with nanometer island structure， and the crystal quality is significantly improved. The thermal oxidation process based on the GaAs single crystal proposed in this article can obtain nano-structured β-Ga"
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"data": "作为第三代半导体材料，氧化镓（Ga"
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{
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"data": "）近年来得到了业界广泛的关注。与传统半导体相比，Ga"
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},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "）为3 444"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "5",
"type": "bibr",
"rid": "R5",
"data": [
{
"name": "text",
"data": "5"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。以上特点使得Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "在高压功率器件的制备方面极具优势。另外，Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "纳米结构薄膜具有更大的比表面积与亚尺度效应，在光电和气体传感方面也表现出明显的优势"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "6",
"type": "bibr",
"rid": "R6",
"data": [
{
"name": "text",
"data": "6"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。目前纳米结构β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜制备方法较多，常见的方法主要有水热法"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "7",
"type": "bibr",
"rid": "R7",
"data": [
{
"name": "text",
"data": "7"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "、金属有机化学气相沉积（MOCVD）"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "8",
"type": "bibr",
"rid": "R8",
"data": [
{
"name": "text",
"data": "8"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "9",
"type": "bibr",
"rid": "R9",
"data": [
{
"name": "text",
"data": "9"
}
]
}
}
],
"rid": [
"R8",
"R9"
],
"text": "8-9",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "、热氧化法"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "10",
"type": "bibr",
"rid": "R10",
"data": [
{
"name": "text",
"data": "10"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "12",
"type": "bibr",
"rid": "R12",
"data": [
{
"name": "text",
"data": "12"
}
]
}
}
],
"rid": [
"R10",
"R11",
"R12"
],
"text": "10-12",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "、MBE"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "13",
"type": "bibr",
"rid": "R13",
"data": [
{
"name": "text",
"data": "13"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "法和CVD"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "14",
"type": "bibr",
"rid": "R14",
"data": [
{
"name": "text",
"data": "14"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "法等。目前的报道中，纳米线结构的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "制备工艺复杂、成本高，且未完全氧化的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜与衬底材料间仍存在较大的晶格失配，易与衬底产生分层，晶体质量差"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "15",
"type": "bibr",
"rid": "R15",
"data": [
{
"name": "text",
"data": "15"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "17",
"type": "bibr",
"rid": "R17",
"data": [
{
"name": "text",
"data": "17"
}
]
}
}
],
"rid": [
"R15",
"R16",
"R17"
],
"text": "15-17",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。与之相比，热氧化法制备β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜工艺简单、成本较低，且完全氧化的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜具有纳米岛状形貌，具有更高的晶体质量。本实验以p-GaAs单晶为衬底，利用高温热氧化工艺将衬底完全氧化为β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜，并总结了β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜的生长机理，探讨了氧化过程中O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流量等对β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜的晶体结构等特性的影响。该方法为制备β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "材料提供了一种新思路，并为制备Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "基器件提供了更多选择。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2 实 验"
}
],
"level": "1",
"id": "s2"
}
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.1 样品制备"
}
],
"level": "2",
"id": "s2a"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本文以（100）晶向的p型GaAs晶片为衬底，采用高温热氧化法制备β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜。由于GaAs是一种在高温下不稳定的半导体材料，根据Langmuir蒸发效应，当温度超过600 ℃时，GaAs晶格开始分解后，As原子会从衬底表面优先析出"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "18",
"type": "bibr",
"rid": "R18",
"data": [
{
"name": "text",
"data": "18"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。同时，O原子会根据浓度梯度取代As原子，在高温下迁移到稳定的位置，与Ga原子结合成β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "分子。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "实验设备采用水平管式快速退火炉（KJ-MTI, OTF 1200X-4-RTP）。采用高纯O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "（5N）作为氧源，高纯N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "（5N）作为载气。实验操作过程如下：（1）依次用丙酮、乙醇、去离子水清洁GaAs衬底（清洗时间5 min），并用N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "吹干，去除衬底表面杂质；（2）将GaAs衬底置于水平管式退火炉中，用N"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "对反应腔进行洗气，重复三次，将腔内剩余氧气排出；（3）分别在0.2，0.4，0.6，0.8 L/min的O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速下，将GaAs衬底加热到900 ℃，然后高温氧化30 min。样品分别命名为a、b、c、d。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.2 样品表征"
}
],
"level": "2",
"id": "s2b"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "我们对制得的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜进行了测试与表征。采用扫描电子显微镜（SEM，JOEL，JSM-7610）研究样品表面形貌；使用光学显微镜（BX53M，OLMPUS）观测样品截面形貌；利用共聚焦显微拉曼光谱仪（Raman，LabRAM HR Evolution，Horiba）测定样品的晶体结构；使用X射线衍射仪（XRD，SmartLabSE, Rigaku）测定β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜的晶体质量；通过PL光谱仪（Horiba iHR550）分析样品的光学特性。"
}
]
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "3 结果与讨论"
}
],
"level": "1",
"id": "s3"
}
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "3.1 表面形貌与生长机理"
}
],
"level": "2",
"id": "s3a"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "为了分析样品的表面微观形貌，我们对样品a~d进行扫描电子显微镜测试，测试结果如"
},
{
"name": "xref",
"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
{
"name": "text",
"data": "图1"
}
]
}
},
{
"name": "text",
"data": "所示。可以发现，当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速为0.2 L/min时，样品表面存在较多的Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "纳米线（"
},
{
"name": "xref",
"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
{
"name": "text",
"data": "图1"
}
]
}
},
{
"name": "text",
"data": "（a）），纳米线直径约为75 nm，长度范围为0.1 ~1.4 μm。当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速超过0.4 L/min时，Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "主要以纳米岛状形式生长，极少部分以较短的纳米线或纳米颗粒形式生长。β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "纳米线的生长机理为气-液-固（VLS）模式"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "19",
"type": "bibr",
"rid": "R19",
"data": [
{
"name": "text",
"data": "19"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。在低氧气氛下，反应速率较慢，样品表面存在大量的Ga液滴，与O原子缓慢结合，有助于形成一维纳米材料。在高氧气氛下，大量O原子迅速与Ga液滴反应，生成Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜，剩余极少数Ga液滴与O原子结合，形成Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "纳米线或纳米颗粒。当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速升高至0.8 L/min时，岛状结构增多，高度升高，表面缺陷增多。这表明在高氧气浓度下，O原子与Ga原子反应剧烈，造成表面粗糙度增大。"
}
]
},
{
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"data": {
"id": "F1",
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{
"lang": "zh",
"label": [
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"data": "图1"
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"title": [
{
"name": "text",
"data": "（a）~（d）β-Ga"
},
{
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"data": [
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"data": "2"
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]
},
{
"name": "text",
"data": "O"
},
{
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"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "样品的SEM照片"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.1"
}
],
"title": [
{
"name": "text",
"data": "（a）-（d）SEM images of β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": " sample"
}
]
}
],
"subcaption": [],
"note": [],
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"data": [
{
"name": "text",
"data": "在0.8 L/min的氧气流速、900 ℃的温度下，将GaAs衬底分别氧化5，10，20，30 min，使用光学显微镜对Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "断面进行表征，探讨了Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "厚度随氧化时间的变化。"
},
{
"name": "xref",
"data": {
"text": "图2",
"type": "fig",
"rid": "F2",
"data": [
{
"name": "text",
"data": "图2"
}
]
}
},
{
"name": "text",
"data": "（a） ~ （e）为不同氧化时间的样品断面显微照片，"
},
{
"name": "xref",
"data": {
"text": "图2",
"type": "fig",
"rid": "F2",
"data": [
{
"name": "text",
"data": "图2"
}
]
}
},
{
"name": "text",
"data": "（f）为样品氧化过程示意图。从"
},
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"data": {
"text": "图2",
"type": "fig",
"rid": "F2",
"data": [
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"data": "图2"
}
]
}
},
{
"name": "text",
"data": "（a） ~ （b）中可以看出，当氧化时间较短时，样品断面光滑，明亮部分为GaAs，"
},
{
"name": "xref",
"data": {
"text": "图2",
"type": "fig",
"rid": "F2",
"data": [
{
"name": "text",
"data": "图2"
}
]
}
},
{
"name": "text",
"data": "（b）中较暗部分为Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "。从"
},
{
"name": "xref",
"data": {
"text": "图2",
"type": "fig",
"rid": "F2",
"data": [
{
"name": "text",
"data": "图2"
}
]
}
},
{
"name": "text",
"data": "（c） ~ （e）中可以看出，当氧化时间较长时，样品断面粗糙，其中明亮部分为Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "，较暗部分为GaAs。测试结果表明，热氧化反应呈现渗透与扩散的过程，GaAs正面首先开始氧化，随着氧化时间的延长，与氧气接触较少的背面也逐渐开始与O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "反应，生成Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "；氧化时间达到30 min时，GaAs完全被氧化为Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "，厚度为425 μm。"
}
]
},
{
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"data": {
"id": "F2",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图2"
}
],
"title": [
{
"name": "text",
"data": "（a）~（e）不同氧化时间的样品断面显微照片；（f）样品氧化过程示意图。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.2"
}
],
"title": [
{
"name": "text",
"data": "（a）-（e）Micrographs of sample sections at different oxidation time. （f）Schematic diagram of sample oxidation process."
}
]
}
],
"subcaption": [],
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"data": [
{
"name": "text",
"data": "根据Langmuir理论，当氧化温度高于600 ℃时，As会优先蒸发，而在GaAs表面留下Ga"
},
{
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"data": [
{
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"data": "["
},
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"data": {
"text": "20",
"type": "bibr",
"rid": "R20",
"data": [
{
"name": "text",
"data": "20"
}
]
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"data": "]"
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{
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"data": "。如"
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"data": {
"text": "图2",
"type": "fig",
"rid": "F2",
"data": [
{
"name": "text",
"data": "图2"
}
]
}
},
{
"name": "text",
"data": "（f）插图所示，在900 ℃、压强133 Pa（1 Torr）下低氧退火30 min的样品表面产生了大量的Ga液滴。验证热氧化过程与Langmuir蒸发有关。另外，从样品表面的痕迹可以得出，GaAs表面连续分解生成的Ga原子是聚集的，并表现出特定的趋向性。"
}
]
}
]
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"title": [
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"name": "text",
"data": "3.2 X射线衍射结果"
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],
"level": "2",
"id": "s3b"
}
},
{
"name": "p",
"data": [
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "为样品a~d的X射线衍射图谱。从图中可以看出，当O"
},
{
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"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速为0.2 L/min时，样品a存在4个衍射峰。其中，位于29.6°、42.6°、45.3°的衍射峰分别对应β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "的（400）、（311）以及（"
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"name": "text",
"data": "）晶面（JCPDS，No.76-0573）。此外，样品a存在位于65.6°的属于GaAs的衍射峰，说明在低氧气氛下，O原子浓度较低、反应速率较慢，短时间内O原子无法取代全部的As原子，存在一定的GaAs残留。而样品b~d只存在β-Ga"
},
{
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"data": "2"
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]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
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"data": "3"
}
]
},
{
"name": "text",
"data": "对应的3个衍射峰，说明当O"
},
{
"name": "sub",
"data": [
{
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"data": "2"
}
]
},
{
"name": "text",
"data": "流速大于0.4 L/min时，GaAs被全部氧化为β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
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"data": "3"
}
]
},
{
"name": "text",
"data": "；另外，晶面取向少说明热氧化法将含镓衬底直接转化为β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "，结晶质量高。当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速由0.4 L/min提高到0.6 L/min时，β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "各晶面的衍射峰强度明显升高，晶体质量显著增强。这表明在0.4 L/min的O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速下，GaAs虽然被全部转化为β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "，但由于O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "浓度较低，结晶质量较差。当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速提高到0.6 L/min时，各晶面生长速度加快，使得一些较弱的衍射峰强度迅速增强。当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速为0.8 L/min时，（400）晶面的衍射峰增强，而（311）以及（"
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"data": "）晶面的衍射峰强度降低。GaAs在热氧化的过程中，As原子被O原子取代形成Ga"
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"data": "2"
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},
{
"name": "text",
"data": "O"
},
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"data": [
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]
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"data": "，因此Ga"
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]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
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"data": "3"
}
]
},
{
"name": "text",
"data": "应该与GaAs有着最小的晶格失配。β-Ga"
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{
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"data": [
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"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
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"data": "3"
}
]
},
{
"name": "text",
"data": "在（400）晶向上的氧原子密度很高，排列呈近似的菱形或方形，这种排列与GaAs中的Ga原子排列相对应"
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"data": [
{
"name": "text",
"data": "["
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"data": {
"text": "20",
"type": "bibr",
"rid": "R20",
"data": [
{
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"data": "20"
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}
},
{
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"data": "]"
}
]
},
{
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"data": "。在氧化过程中，O原子与GaAs表面的Ga立方体成键，形成Ga"
},
{
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"data": [
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"data": "2"
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]
},
{
"name": "text",
"data": "O"
},
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"data": [
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"data": "3"
}
]
},
{
"name": "text",
"data": "。因此，在（100） GaAs上生长的β-Ga"
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]
},
{
"name": "text",
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]
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{
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"data": "的优选取向合理为（400）。此时（400）晶面的择优生长一定程度上削弱了其他晶面的生长。"
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"data": "β-Ga"
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},
{
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"data": "O"
},
{
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"data": "3"
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]
},
{
"name": "text",
"data": "薄膜的XRD测试图"
}
]
},
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"data": "Fig.3"
}
],
"title": [
{
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"data": "XRD test image of β-Ga"
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{
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{
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"data": "2"
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]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
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"data": "3"
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]
},
{
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"data": " films"
}
]
}
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"data": [
{
"name": "text",
"data": "为了进一步分析β-Ga"
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{
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}
]
},
{
"name": "text",
"data": "O"
},
{
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"data": [
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"data": "3"
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]
},
{
"name": "text",
"data": "纳米体块薄膜的结构特性，将样品a ~ d进行拉曼光谱测试，结果如"
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"data": {
"text": "图4",
"type": "fig",
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{
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"data": "所示。从图中可以看出，样品a ~ d的拉曼振动峰全部由β-Ga"
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{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "产生。将实验中得到的拉曼模频率与标准的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "、标准的GaAs拉曼模相比较，结果如表"
},
{
"name": "xref",
"data": {
"text": "1",
"type": "table",
"rid": "T1",
"data": [
{
"name": "text",
"data": "1"
}
]
}
},
{
"name": "text",
"data": "、"
},
{
"name": "xref",
"data": {
"text": "2",
"type": "table",
"rid": "T2",
"data": [
{
"name": "text",
"data": "2"
}
]
}
},
{
"name": "text",
"data": "所示。位于113.1，144.2，169.7，200.5 cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "位置处的振动峰分别对应低频模B"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（1）"
}
]
},
{
"name": "text",
"data": "、B"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（2）"
}
]
},
{
"name": "text",
"data": "、A"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（2）"
}
]
},
{
"name": "text",
"data": "、A"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（3）"
}
]
},
{
"name": "text",
"data": "，位于321.1，346.2，417.2，477.2 cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "位置处的振动峰对应中频模A"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（4）"
}
]
},
{
"name": "text",
"data": "、A"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（5）"
}
]
},
{
"name": "text",
"data": "、A"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（6）"
}
]
},
{
"name": "text",
"data": "、A"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（7）"
}
]
},
{
"name": "text",
"data": "，位于632.2，651.2，658.0，767.5 cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "位置处的振动峰对应高频模A"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（8）"
}
]
},
{
"name": "text",
"data": "、B"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（5）"
}
]
},
{
"name": "text",
"data": "、A"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（9）"
}
]
},
{
"name": "text",
"data": "、A"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "g"
}
]
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "（10）["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "21",
"type": "bibr",
"rid": "R21",
"data": [
{
"name": "text",
"data": "21"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "23",
"type": "bibr",
"rid": "R23",
"data": [
{
"name": "text",
"data": "23"
}
]
}
}
],
"rid": [
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"R22",
"R23"
],
"text": "21-23",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。氧气流速为0.2 L/min时，样品a未见GaAs特征峰，这是由于测试取得信号位于光斑聚焦点所在薄层微区，可以观测样品同一层面内不同微区的拉曼光谱信号"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "24",
"type": "bibr",
"rid": "R24",
"data": [
{
"name": "text",
"data": "24"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "；另外，样品a纳米结构表面强散射激发的表面增强拉曼散射效应也具有放大样品表面的拉曼信号的现象"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
{
"name": "text",
"data": "25"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速由0.4 L/min提高到0.8 L/min时，β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "各拉曼振动峰强度增大，特别是低频模200.5 cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "位置处的振动峰强度明显增强，与四面体-八面体链的释放和平移程度有关"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "26",
"type": "bibr",
"rid": "R26",
"data": [
{
"name": "text",
"data": "26"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。表明O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "浓度的增加改善了β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜的排列结构。同时，随着O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "浓度的增加，样品的拉曼振动峰峰位偏移较小，与β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "标准拉曼模频率相吻合，表明样品的应变较小, 晶体质量高。拉曼测试结果进一步验证了所制备的样品为β晶相氧化镓体块薄膜。"
}
]
},
{
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"lang": "zh",
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{
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},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜的拉曼位移测试图"
}
]
},
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"label": [
{
"name": "text",
"data": "Fig.4"
}
],
"title": [
{
"name": "text",
"data": "Raman shift test image of β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3 "
}
]
},
{
"name": "text",
"data": "films"
}
]
}
],
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"name": "text",
"data": "表1"
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"title": [
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"name": "text",
"data": "标准的β⁃Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "拉曼模频率与实验中得到的拉曼模频率比较"
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]
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"label": [
{
"name": "text",
"data": "Tab.1"
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"title": [
{
"name": "text",
"data": "Comparison of the standard β-Ga"
},
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"name": "sub",
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{
"name": "text",
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}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
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"data": " Raman mode frequencies with those obtained from experiment"
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"data": [
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"name": "text",
"data": "Ref. 21"
}
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"style": "border-bottom:solid;",
"data": [
{
"name": "text",
"data": "Ref.22"
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{
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"style": "border-bottom:solid;",
"data": [
{
"name": "text",
"data": "Ref.21"
}
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{
"align": "center",
"style": "border-bottom:solid;",
"data": [
{
"name": "text",
"data": "Ref. 22"
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[
{
"align": "center",
"data": [
{
"name": "text",
"data": "A"
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"name": "text",
"data": "g"
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"data": [
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"name": "text",
"data": "n.o."
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]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "111.0"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "110.2"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "113.5"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "104"
}
]
}
],
[
{
"align": "center",
"data": [
{
"name": "text",
"data": "B"
},
{
"name": "sub",
"data": [
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"name": "text",
"data": "g"
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"data": [
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"name": "text",
"data": "（1）"
}
]
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "113.1"
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]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "114.8"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "113.6"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "118.6"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "113"
}
]
}
],
[
{
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"data": [
{
"name": "text",
"data": "B"
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"data": "g"
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}
]
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "144.2"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "144.8"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "144.7"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "145.6"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "149"
}
]
}
],
[
{
"align": "center",
"data": [
{
"name": "text",
"data": "A"
},
{
"name": "sub",
"data": [
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"name": "text",
"data": "g"
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"data": [
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"data": "（2）"
}
]
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "169.7"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "169.9"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "169.2"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "176.4"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "165"
}
]
}
],
[
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]
},
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"data": [
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"name": "text",
"data": "200.5"
}
]
},
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"align": "center",
"data": [
{
"name": "text",
"data": "200.2"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "200.4"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "199.1"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "205"
}
]
}
],
[
{
"align": "center",
"data": [
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"name": "text",
"data": "A"
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{
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"data": "（4）"
}
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]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "321.1"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "320.0"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "318.6"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "318.5"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "317"
}
]
}
],
[
{
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"data": [
{
"name": "text",
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{
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"name": "text",
"data": "346.2"
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]
},
{
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"data": [
{
"name": "text",
"data": "346.6"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "346.4"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "342.5"
}
]
},
{
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{
"name": "text",
"data": "346"
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]
}
],
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{
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"data": [
{
"name": "text",
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"name": "text",
"data": "g"
}
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"name": "text",
"data": "n.o."
}
]
},
{
"align": "center",
"data": [
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"name": "text",
"data": "353.2"
}
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{
"name": "text",
"data": "n.o."
}
]
},
{
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"name": "text",
"data": "359.2"
}
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},
{
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"data": [
{
"name": "text",
"data": "356"
}
]
}
],
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{
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},
{
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}
]
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]
},
{
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"data": [
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"name": "text",
"data": "417.2"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "416.2"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "415.7"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "432.0"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "418"
}
]
}
],
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{
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"data": [
{
"name": "text",
"data": "A"
},
{
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}
]
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]
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{
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"data": [
{
"name": "text",
"data": "477.2"
}
]
},
{
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"data": [
{
"name": "text",
"data": "474.9"
}
]
},
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{
"name": "text",
"data": "n.o."
}
]
},
{
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"data": [
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"name": "text",
"data": "472.8"
}
]
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"data": [
{
"name": "text",
"data": "467"
}
]
}
],
[
{
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{
"name": "text",
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},
{
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{
"name": "text",
"data": "n.o."
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "474.9"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "473.5"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "486.1"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "474"
}
]
}
],
[
{
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"data": [
{
"name": "text",
"data": "A"
},
{
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"name": "text",
"data": "g"
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"data": "（8）"
}
]
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "632.2"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "630.0"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "628.7"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "624.4"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "600"
}
]
}
],
[
{
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"data": [
{
"name": "text",
"data": "B"
},
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"data": "（5）"
}
]
}
]
},
{
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"data": [
{
"name": "text",
"data": "651.2"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "652.3"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "652.5"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "653.9"
}
]
},
{
"align": "center",
"data": [
{
"name": "text",
"data": "626"
}
]
}
],
[
{
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"data": [
{
"name": "text",
"data": "A"
},
{
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"name": "text",
"data": "g"
}
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"data": "（9）"
}
]
}
]
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{
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"data": [
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"name": "text",
"data": "658.0"
}
]
},
{
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"data": [
{
"name": "text",
"data": "658.3"
}
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{
"name": "text",
"data": "n.o."
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"data": "655.8"
}
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"data": [
{
"name": "text",
"data": "637"
}
]
}
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]
},
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"data": [
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"data": "767.5"
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]
},
{
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"style": "border-bottom:solid;",
"data": [
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"name": "text",
"data": "766.7"
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]
},
{
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"style": "border-bottom:solid;",
"data": [
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"name": "text",
"data": "763.9"
}
]
},
{
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"style": "border-bottom:solid;",
"data": [
{
"name": "text",
"data": "767.0"
}
]
},
{
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"style": "border-bottom:solid;",
"data": [
{
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"data": "732"
}
]
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"title": [
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"name": "text",
"data": "标准的GaAs拉曼模频率"
}
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"title": [
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"data": "Standard GaAs Raman mode frequencies"
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[
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}
]
},
{
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"style": "border-top:solid;border-bottom:solid;",
"data": [
{
"name": "text",
"data": "Theory/cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1［"
},
{
"name": "xref",
"data": {
"text": "23",
"type": "bibr",
"rid": "R23",
"data": [
{
"name": "text",
"data": "23"
}
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}
},
{
"name": "text",
"data": "］"
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"name": "text",
"data": "268"
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]
}
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"title": [
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"name": "text",
"data": "3.4 光致发光性能"
}
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}
},
{
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"data": [
{
"name": "xref",
"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
{
"name": "text",
"data": "图5"
}
]
}
},
{
"name": "text",
"data": "为在波长为235 nm的激光激发下样品的光致发光谱。从图中可以看出，样品a ~ d在紫外光波段和蓝光波段均有明显的发光峰。位于357 nm处的紫外发光峰由β-Ga"
},
{
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"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "自陷激子复合产生"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "27",
"type": "bibr",
"rid": "R27",
"data": [
{
"name": "text",
"data": "27"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，位于410 nm处的蓝光发光峰由β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "内施主-受主对复合产生"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "28",
"type": "bibr",
"rid": "R28",
"data": [
{
"name": "text",
"data": "28"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速为0.2 L/min时，样品的发光峰较弱，且蓝光发光强度高于紫外发光，表明晶体质量差，具有更多的蓝光发射相关的缺陷能级。当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速从0.2 L/min提高到0.4 L/min时，光致发光峰强度增大，说明作为陷阱中心的O空位浓度降低，缺陷导致的非辐射复合低，晶体质量高。另外，β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "的生长模式从纳米线生长转变为纳米岛生长，界面态密度降低，抑制了光生载流子的散射，发光峰强度增强，即β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "纳米岛薄膜相对于β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "纳米线薄膜具有更低的光生载流子的散射与陷阱中心浓度。当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速从0.4 L/min提高到0.8 L/min时，紫外发光峰强度没有明显变化，蓝光发光峰强度逐渐降低，此时外界环境中氧分压较高，抑制了薄膜中O原子的溢出"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "29",
"type": "bibr",
"rid": "R29",
"data": [
{
"name": "text",
"data": "29"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，降低了β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "中作为施主的氧空位浓度，施主-受主对复合减少，从而抑制了蓝光发射。O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速为0.8 L/min时，样品的蓝光发射峰蓝移可能与过量氧气引起的新缺陷态的辐射复合有关。"
}
]
},
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"lang": "zh",
"label": [
{
"name": "text",
"data": "图5"
}
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{
"name": "text",
"data": "β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜的PL测试图"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.5"
}
],
"title": [
{
"name": "text",
"data": "PL test image of β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": " films"
}
]
}
],
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"data": "4 结 论"
}
],
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"id": "s4"
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},
{
"name": "p",
"data": [
{
"name": "text",
"data": "我们利用p型GaAs单晶衬底的热氧化法制备了纳米岛状的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜。其反应过程与Langmuir蒸发有关：当温度超过600 ℃时，As原子从衬底表面优先析出，O原子顺浓度梯度取代As原子，在高温下迁移到稳定的位置，与Ga原子结合成β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "。探讨了O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速对β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜晶体质量的影响。实验发现，当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速为0.2 L/min时，GaAs不能被完全氧化，所制备的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "表面呈现为纳米线状结构，薄膜质量较差。当O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速超过0.4 L/min时，GaAs被完全氧化为纳米岛状的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜，薄膜质量得到改善。Raman测试发现，随着O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "浓度增加，出现了新的振动峰，且振动峰强度逐渐增强，β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜的排列结构得到改善。通过XRD测试发现，所制备的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "是以（400）晶面优先取向的多晶薄膜，随着O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "浓度增加，各晶面衍射峰强度增大。Raman和XRD测试结果进一步验证了所制备的样品为β晶相氧化镓体块薄膜。在235 nm波长激光激发下，在357 nm和410 nm处出现光致发光峰，且410 nm处的蓝光发光峰强度随O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "流速增大而降低。本文提出的热氧化法制备β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "可以高效、低成本地获得较高结晶质量的β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "体块薄膜，为制备纳米结构β-Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "提供了一种新思路。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本文专家审稿意见及作者回复内容的下载地址："
},
{
"name": "extlink",
"data": {
"text": [
{
"name": "text",
"data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210399."
}
],
"href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210399."
}
}
]
}
]
}
],
"footnote": [],
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"ppub": "2022-07-05",
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