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无电学接触型氮化镓基Micro⁃LED器件光电性能
器件制备及器件物理 | 更新时间：2022-11-04
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无电学接触型氮化镓基Micro⁃LED器件光电性能 增强出版
- Photoelectric Characteristics of Non-electric Contact GaN-based Micro-LED Device
- 发光学报 2022年 43卷 第10期 (2022)
- 作者机构：福州大学 物理与信息工程学院,福建,福州,350116;中国福建光电信息科学与技术创新实验室,福建,福州,350108
- 作者简介：
- 基金信息：国家重点研发计划(2021YFB3600402);闽都创新实验室自主部署项目(2021ZZ111;2021ZZ130)
- DOI：10.37188/CJL.20220237 中图分类号： TN303;TN304.2
纸质出版日期：2022-10-05，
收稿日期：2022-06-14，
修回日期：2022-07-04，
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引用本文
许海龙,陈孔杰,陈培崎等.无电学接触型氮化镓基Micro⁃LED器件光电性能[J].发光学报,2022,43(10):1592-160010.37188/CJL.20220237.
XU Hai-long,CHEN Kong-jie,CHEN Pei-qi,et al.Photoelectric Characteristics of Non-electric Contact GaN-based Micro-LED Device[J].Chinese Journal of Luminescence,2022,43(10):1592-160010.37188/CJL.20220237.
许海龙,陈孔杰,陈培崎等.无电学接触型氮化镓基Micro⁃LED器件光电性能[J].发光学报,2022,43(10):1592-160010.37188/CJL.20220237. DOI：
XU Hai-long,CHEN Kong-jie,CHEN Pei-qi,et al.Photoelectric Characteristics of Non-electric Contact GaN-based Micro-LED Device[J].Chinese Journal of Luminescence,2022,43(10):1592-160010.37188/CJL.20220237. DOI：
无电学接触型氮化镓基Micro⁃LED器件光电性能 增强出版
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"data": "微型发光二极管（Micro-light emitting diode，Micro-LED）具有高亮度、高分辨率、高寿命、低功耗、低延迟、低成本、宽工作温度范围等优点，在新型显示技术"
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"data": "等领域有着广泛的应用。通常，把芯片尺寸小于50 μm的发光芯片定义为Micro-LED芯片"
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"data": "。随着5G技术的发展，通信技术与显示领域的AR/VR、3D显示和超高清视频等技术相结合"
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"data": "，将进一步推动Micro-LED显示技术和产业发展。此外，在高分辨率穿戴式显示、柔性显示、透明显示、光通信、光生物医学等领域"
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"data": "然而，随着Micro-LED芯片尺寸减小，将出现高良率巨量转移与键合、芯片电极与驱动背板的高稳定性接触等问题，对Micro-LED器件制备工艺提出了极高挑战；此外，由于Micro-LED器件还存在电极吸光和衬底散热难的技术问题，器件工作中接触电阻会产生焦耳热，导致器件性能下降"
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"data": "。2020年，吴等提出了一种无电学接触（Non-electric contact，NEC）驱动氮化镓基（GaN）Micro-LED器件"
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"data": "，为解决上述问题提供了一种全新的技术方案。该团队在垂直结构Micro-LED芯片两端施加高频交流电压产生高频交变电场使得Micro-LED芯片内部的空穴和电子向多量子阱区（Multiple quantum wells，MQWs）发生移动，并在MQWs发生复合发光，已证实垂直方向交变电场能驱动NEC Micro-LED器件。目前，Micro-LED芯片结构主要有垂直结构、倒装和正装结构，因此，施加电场可以选择垂直方向和水平方向。垂直方向电场是指电场两端分别位于p-GaN上方与n-GaN或蓝宝石衬底下方，电场线方向与器件垂直。而水平方向电场则是电场两端分别位于p-GaN上方与n-GaN上方，两端电场线互相平行。"
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"data": "水平方向电场驱动Micro-LED器件与垂直方向电场驱动器件相比"
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"data": [
{
"name": "text",
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"data": "，前者不用剥离蓝宝石衬底，可以直接利用倒装或正装的Micro-LED芯片进行制备，减少了工艺流程。但是，这种器件结构的缺点是需要更高的驱动电压或更强的电场来进行驱动。因此，本文设计并制备了一种水平结构的无电学接触型Micro-LED（NEC Micro-LED）器件，在器件绝缘层表面施加交流驱动电压，利用产生交变电场研究了NEC Micro-LED器件的伏安特性（Current-voltage，"
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"data": "V"
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]
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"data": "）、亮度-频率（Luminance-frequency，"
},
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"data": [
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"name": "text",
"data": "L"
}
]
},
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"name": "text",
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]
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"data": "）特性、发光延迟和阻抗-频率（Impedance-frequency，"
},
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"name": "italic",
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{
"name": "text",
"data": "I"
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]
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"data": "F"
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]
},
{
"name": "text",
"data": "）特性等光电性能。"
}
]
}
]
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"data": "2 实 验"
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"data": "（a）是本实验NEC GaN基Micro-LED器件结构示意图。基于水平结构型的Micro-LED器件从上至下分别为p-GaN、MQWs、n-GaN、蓝宝石衬底以及沉积于p-GaN和n-GaN表面的Al"
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"data": "绝缘层，器件总厚度大约为6.8 μm（不包含蓝宝石衬底）。"
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"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
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},
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"name": "text",
"data": "（b）为NEC Micro-LED器件驱动示意图。该器件制备包括Micro-LED芯片制备和Al"
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"data": "绝缘层制备。首先，利用金属有机化学气相沉积（Metal-organic chemical vapor deposition，MOCVD）在蓝宝石衬底上依次生长AlN成核层（5 nm）、GaN缓冲层（4 μm）、n-GaN层（2 μm）、MQWs层141 nm和p-GaN层0.65 μm，其中MQWs层中的势阱层In"
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"data": "N为3 nm，势垒层GaN为15 nm，共7个周期（8个垒7个阱）。整个外延片厚度约为6.8 μm（不包括蓝宝石衬底的厚度）。然后，利用光刻技术和ICP干法刻蚀对生长后的外延片进行刻蚀，裂片后得到无接触电极的Micro-LED芯片，尺寸为37 μm×94 μm，光学显微镜图片如"
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"data": "（c）所示。"
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"data": "（d）展示了Micro-LED芯片的SEM形貌图，从图中可以看出芯片生长质量良好，可以用于无电学接触的交流电场驱动。"
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"data": "（a）NEC Micro-LED器件结构示意图；（b）器件驱动示意图；（c）光学形貌图；（d）SEM形貌图；（e）NEC Micro-LED器件的电场线分布图。"
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"data": "Fig.1"
}
],
"title": [
{
"name": "text",
"data": "（a）Schematic diagram of NEC GaN-based Micro-LED device. （b）Driving model of the device. （c）Optical image. （d）SEM image. （e）Electric field distribution of NEC Micro-LED device."
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"data": "（e）是通过有限元仿真软件仿真得到的NEC Micro-LED器件的电场线分布。NEC Micro-LED器件电场的形成源于器件两端所加的电压降，从图中可以看出，电场线分布是从器件一端的绝缘层开始，穿过p-GaN层、多量子阱层、n-GaN层，到器件另一端的绝缘层。"
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"data": "为了实现Micro-LED器件的无电学接触，本实验采用原子层沉积（Atomic layer deposition，ALD）技术在Micro-LED芯片的p-GaN和n-GaN表面沉积Al"
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"data": "绝缘层。利用ALD技术所制备的Al"
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"data": "薄膜具有均匀性、致密性"
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"data": "、膜厚可控等特点，能够满足本实验对无电学接触型Micro-LED水平结构器件的电学性能测试。"
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"name": "text",
"data": "*"
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]
},
{
"name": "text",
"data": "+H"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O→AlOH"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "*"
}
]
},
{
"name": "text",
"data": "+CH"
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{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "，"
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{
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]
},
{
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"data": " "
}
],
"id": "DF2"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "总体反应式为："
}
]
},
{
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"data": {
"label": [
{
"name": "text",
"data": "（3）"
}
],
"data": [
{
"name": "text",
"data": "2Al（CH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "）"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "+3H"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O→Al"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "+6CH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "，"
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],
"id": "DF3"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "经过一个循环反应过程，Micro-LED芯片表面生长一层Al"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜，重复150个循环，就能在芯片表面生长15 nm的Al"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "薄膜。至此，本实验无电学接触型GaN基Micro-LED器件已制备完成。"
}
]
}
]
}
]
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"data": {
"title": [
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"data": [
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "为未镀绝缘层的Micro-LED芯片在直流驱动模式下的光电性能。"
},
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "（a）为Micro-LED器件的"
},
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{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "-"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "V"
}
]
},
{
"name": "text",
"data": "特性曲线，与传统LED的"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "-"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "V"
}
]
},
{
"name": "text",
"data": "特性曲线类似。处于反向截止区域时，随着反向电压逐渐增大，反向电流非常小且几乎保持不变，在-10 V偏压范围内测得的最大反向电流约为3.18×10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-4 "
}
]
},
{
"name": "text",
"data": "μA，且反向击穿电压高于-10 V；处于正向电压区时，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "-"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "V"
}
]
},
{
"name": "text",
"data": "曲线呈现非线性特性。当正向电压低于开启电压时，电流几乎为0 A；当正向电压高于开启电压时，电流随电压呈指数增长。从"
},
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "（a）还可以发现，该Micro-LED器件的开启电压大于+5 V，高于Micro-LED器件的开启电压。这是因为本实验中Micro-LED器件的n-GaN和p-GaN上并未制备电极，n-GaN和p-GaN与外电极之间未形成欧姆接触，因此，器件开启电压会远高于传统Micro-LED器件。"
},
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "（b）是Micro-LED器件相对亮度与电压的关系曲线，因为Micro-LED器件发光亮度的值较小，实验对亮度进行归一化处理。从"
},
{
"name": "xref",
"data": {
"text": "图 3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图 3"
}
]
}
},
{
"name": "text",
"data": "（b）看出，器件亮度随电压变化趋势与其伏安特性曲线基本相同。在外部电压大于开启电压后，亮度随电压呈指数增长。本实验采用光谱仪（Everfine，SRC-200M）测试不同电压下的电致发光（Electroluminescence，EL）光谱，实验结果如"
},
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "（c）所示，发光波长范围为410~500 nm，峰值波长约为455 nm，半峰宽约为16.4 nm。"
},
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "（d）展示了器件中心波长与相对亮度随电压的变化关系，随着驱动电压增加，器件发光相对亮度增大，中心波长仅有±0.8 nm漂移，说明器件稳定性高，可用于制备本实验的NEC Micro-LED器件。"
}
]
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"lang": "zh",
"label": [
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"data": "直流模式下Micro-LED器件的光电性能。 （a）"
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"data": "曲线；（b）亮度-电压曲线；（c）不同电压下的EL光谱；（d）中心波长和EL强度随电压变化关系图。"
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]
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"label": [
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"name": "text",
"data": "Fig.3"
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"title": [
{
"name": "text",
"data": "Photoelectric performance of Micro-LED device in DC mode. （a）"
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{
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"data": " curve. （b）Relative luminance "
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{
"name": "text",
"data": "versus"
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]
},
{
"name": "text",
"data": " voltage. （c）EL spectra at different voltages. （d）Central wavelength of EL spectrum "
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"data": "versus"
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]
},
{
"name": "text",
"data": " voltage and EL intensity "
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"name": "italic",
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"data": "versus"
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]
},
{
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"data": " voltage."
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"data": "3.1 伏安特性"
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"data": [
{
"name": "text",
"data": "本实验在SCG真空探针台（SEMISHΛRE，SCG-0-2）上进行，并采用函数信号发生器（RIGOL，DG4162）结合功率放大器（Aigtek，ATA-2161）对器件进行驱动，驱动电压峰峰值（"
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"data": [
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"name": "text",
"data": "V"
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"name": "text",
"data": "）最高可达1 600 V，频率最高可达150 kHz。与传统直流模式下的Micro-LED伏安特性不同，本实验采用驱动信号为不同频率的正弦波，测试的器件电流都为交流峰值电流（"
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"name": "text",
"data": "I"
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"name": "text",
"data": "）。"
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"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
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]
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{
"name": "text",
"data": "为不同频率下回路中的"
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"name": "text",
"data": "I"
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]
},
{
"name": "text",
"data": "-"
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"name": "text",
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]
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{
"name": "text",
"data": "关系。从图中可以看出，电流随着频率的增大而增大，且电流与电压基本呈线性关系。这是因为水平结构的无电学接触Micro-LED器件在电路模型上可以等效成电阻与电容并联，电容的容抗随频率的增加而降低，因此在相同的电压下，频率越高电流越大。此外，电阻和电容所构成的等效阻抗在固定的频率下可以认为是恒定的，因此，"
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{
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"data": [
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"name": "text",
"data": "I⁃V"
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]
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{
"name": "text",
"data": "曲线基本呈线性关系。"
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"lang": "zh",
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"data": "不同频率下的"
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"data": "曲线（"
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"data": "Fig.4"
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"title": [
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"data": " curves at different frequencies（"
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"data": [
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"name": "text",
"data": "实验中利用信号发生器产生20"
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"data": [
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"name": "text",
"data": "V"
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]
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]
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{
"name": "text",
"data": "的驱动信号，通过光电倍增管（DM0090C）采集不同频率下器件的亮度，并对电路中的电流进行采集，实验结果如"
},
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"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
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"name": "text",
"data": "图5"
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]
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},
{
"name": "text",
"data": "所示。从"
},
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"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
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"name": "text",
"data": "图5"
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},
{
"name": "text",
"data": "（a）中可以看出，随着频率的增高，亮度会呈现先上升后下降的趋势，当频率达到"
},
{
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"data": [
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]
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{
"name": "text",
"data": "=25 MHz附近时，亮度达到最大。且在器件的发光频率范围内，频率对电流的影响不大，电流基本保持不变。可以认为此时发光的增强与频率的增高有关。从"
},
{
"name": "xref",
"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
{
"name": "text",
"data": "图5"
}
]
}
},
{
"name": "text",
"data": "（b）可以看出，电流大小在3 MHz后开始趋于稳定，并在12 MHz左右达到峰值，最后趋于平稳。这说明在固定电压下，在器件发光频率范围内，频率的变化对电流的影响很小，且存在一个可以使水平结构的NEC Micro-LED器件亮度达到最大的最佳频率点。"
}
]
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"data": "(a) NEC Micro⁃LED器件"
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"data": "特性曲线，插图为器件发光照片; (b) NEC Micro⁃LED器件"
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"data": " curve of NEC Micro⁃LED device. The inset is a luminous image of the device. (b) "
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"data": [
{
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"data": "I⁃F "
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]
},
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"data": [
{
"name": "text",
"data": "当NEC Micro⁃LED器件亮度到达最佳发光频率点后，继续增大频率，器件的亮度会随着频率的增大逐渐变小直至为零。这是因为在高频电场下，器件内的电子与空穴在量子阱区内未能发生充分复合发光。而在更高频率的电场下，电子与空穴甚至还未能运动到量子阱区，导致器件在高频下不能产生复合发光。"
}
]
}
]
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"data": {
"title": [
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"name": "text",
"data": "3.3 发光延迟特性"
}
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},
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"data": [
{
"name": "text",
"data": "为了研究器件的发光延迟特性，本实验采用雪崩光电探测器（Thorlabs，APD120A2/M）和示波器，在1 MHz频率、100 V峰峰值的交流电下，采集器件的电流与相对亮度，实验结果如"
},
{
"name": "xref",
"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图6"
}
]
}
},
{
"name": "text",
"data": "所示，图中黑色曲线为回路电流，红色曲线为相对亮度。从图中可以看出，相对亮度的峰值滞后于回路中的电流峰值，表明器件的发光存在延迟效应，其主要原因是器件本身的电容电路特性。此外，从相对亮度曲线还发现，该器件只在交流信号的正半周期发光。这说明器件在正半周期发光完成之后，未复合的内部载流子也会在绝缘层两端累积。当器件工作状态在交流信号的负半周期时，累积的载流子会被释放，使器件内部的载流子回到平衡状态。因此，交流信号的负半周期对器件发光也将起到至关重要的作用。"
}
]
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"lang": "zh",
"label": [
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"name": "text",
"data": "图6"
}
],
"title": [
{
"name": "text",
"data": "NEC Micro⁃LED器件发光延迟特性"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.6"
}
],
"title": [
{
"name": "text",
"data": "Luminescence delay characteristics of NEC Micro⁃LED device"
}
]
}
],
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"title": [
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"data": "3.4 阻抗⁃频率特性"
}
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"data": [
{
"name": "text",
"data": "传统的Micro-LED器件可以等效成电容与电阻并联，因此NEC Micro-LED器件的电路模型也可等效成RC（Resistor-capacitance，RC）电路，该RC电路由Micro-LED芯片与外部Al"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "绝缘层的等效电容串联而成。NEC Micro-LED器件的电容由两部分组成，一部分是与传统Micro-LED器件一样，可以把Micro-LED当作一个电容与电阻并联的电路，另一部分电容是由器件两端的Al"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "绝缘层所构成。峰值电压和峰值电流不在同一时间产生是RC电路的特性，这也是导致上节NEC Micro-LED器件出现发光延迟的原因之一。整个回路的等效RC电路模型如"
},
{
"name": "xref",
"data": {
"text": "图 7",
"type": "fig",
"rid": "F7",
"data": [
{
"name": "text",
"data": "图 7"
}
]
}
},
{
"name": "text",
"data": "（a）所示。"
}
]
},
{
"name": "fig",
"data": {
"id": "F7",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图7"
}
],
"title": [
{
"name": "text",
"data": "（a）NEC Micro-LED器件等效电路; （b）器件阻抗(|"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Z"
}
]
},
{
"name": "text",
"data": "|)-频率曲线和电容("
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "C"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "p"
}
]
},
{
"name": "text",
"data": ")-频率曲线。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.7"
}
],
"title": [
{
"name": "text",
"data": "（a）Equivalent circuit model of NEC Micro-LED. （b）Impedance (|"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Z"
}
]
},
{
"name": "text",
"data": "|) "
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "versus"
}
]
},
{
"name": "text",
"data": " frequency and capacitance ("
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "C"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "p"
}
]
},
{
"name": "text",
"data": ") "
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "versus"
}
]
},
{
"name": "text",
"data": " frequency."
}
]
}
],
"subcaption": [],
"note": [],
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"data": [
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"name": "text",
"data": "在RC电路中，电容的容抗"
},
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"name": "text",
"data": "X"
}
]
},
{
"name": "sub",
"data": [
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"name": "text",
"data": "C"
}
]
},
{
"name": "text",
"data": "由下列公式"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "27",
"type": "bibr",
"rid": "R27",
"data": [
{
"name": "text",
"data": "27"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "给出："
}
]
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"label": [
{
"name": "text",
"data": "（4）"
}
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{
"name": "p",
"data": [
{
"name": "text",
"data": "其中"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "ω"
}
]
},
{
"name": "text",
"data": "=2π"
},
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"name": "italic",
"data": [
{
"name": "text",
"data": "f"
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},
{
"name": "text",
"data": "，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "f"
}
]
},
{
"name": "text",
"data": "为交流信号频率，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "C"
}
]
},
{
"name": "text",
"data": "为电容。定义"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "X"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "C1"
}
]
},
{
"name": "text",
"data": "为Micro-LED的等效电容所对应的容抗，"
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{
"name": "text",
"data": "X"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "C2"
}
]
},
{
"name": "text",
"data": "为外部绝缘介质层构成的电容所对应的容抗，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "为Micro-LED内部等效电阻，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "R"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "为外电路的串联电阻。Micro-LED的等效阻抗"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Z"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "可以由以下公式给出："
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{
"name": "text",
"data": "（5）"
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"math": "",
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"name": "p",
"data": [
{
"name": "text",
"data": "因此，整个RC等效电路的总阻抗"
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"data": [
{
"name": "text",
"data": "Z"
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]
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{
"name": "text",
"data": "可归结为如下公式："
}
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"data": {
"label": [
{
"name": "text",
"data": "（6）"
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"data": {
"math": "",
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"data": " "
}
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{
"name": "p",
"data": [
{
"name": "text",
"data": "由以上公式可知，等效电路的总阻抗"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Z"
}
]
},
{
"name": "text",
"data": "由电阻和电容确定，而回路中等效阻抗和电容与驱动信号的频率密切相关。因此，实验中利用精密阻抗分析仪（Tong Hui，TH2851）测得无电学接触型 Micro-LED器件的电容和等效阻抗，实验结果如"
},
{
"name": "xref",
"data": {
"text": "图7",
"type": "fig",
"rid": "F7",
"data": [
{
"name": "text",
"data": "图7"
}
]
}
},
{
"name": "text",
"data": "（b）所示。图中的黑色曲线为器件的等效阻抗"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Z"
}
]
},
{
"name": "text",
"data": "随频率"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "f"
}
]
},
{
"name": "text",
"data": "变化的曲线，红色曲线是器件的电容"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "C"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "p"
}
]
},
{
"name": "text",
"data": "随频率"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "f"
}
]
},
{
"name": "text",
"data": "变化的曲线。从图中可以看出，器件的等效阻抗"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Z"
}
]
},
{
"name": "text",
"data": "随频率"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "f"
}
]
},
{
"name": "text",
"data": "的增大而减小。当频率"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "f"
}
]
},
{
"name": "text",
"data": "大于某个特定的频率时，阻抗"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Z"
}
]
},
{
"name": "text",
"data": "保持不变。回路中的电流"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "等于驱动电压"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "U"
}
]
},
{
"name": "text",
"data": "与等效阻抗"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Z"
}
]
},
{
"name": "text",
"data": "的比值。在驱动电压"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "U"
}
]
},
{
"name": "text",
"data": "保持不变的情况下，回路电流"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "会随着频率"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "f"
}
]
},
{
"name": "text",
"data": "的增大呈现先增大后趋于稳定。从图中的红色曲线可以看出，器件的电容在频率20 MHz之前几乎保持8 pF，当频率"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "f"
}
]
},
{
"name": "text",
"data": "继续增大，电容"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "C"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "p"
}
]
},
{
"name": "text",
"data": "会迅速增加到77 pF后会突变至负值，这是Micro-LED在高频下的负电容效应。实验中的器件出现负电容的频率大概在53 MHz，负电容出现的原因主要归结于注入MQWs的载流子辐射复合"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "28",
"type": "bibr",
"rid": "R28",
"data": [
{
"name": "text",
"data": "28"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "29",
"type": "bibr",
"rid": "R29",
"data": [
{
"name": "text",
"data": "29"
}
]
}
}
],
"rid": [
"R28",
"R29"
],
"text": "28-29",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。从这点可以说明，NEC Micro-LED器件在高频率和低电压条件下也能发光。但由于函数信号发生器所提供的频率有限，本实验只能通过增大器件的驱动电压点亮NEC Micro-LED器件。"
}
]
}
]
}
]
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"data": {
"title": [
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"name": "text",
"data": "4 实验原理分析"
}
],
"level": "1",
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}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "NEC Micro-LED器件是利用加在Micro-LED两端的高频电场使Micro-LED内部的空穴和电子向多MQWs发生移动，并在MQWs发生复合发光。"
},
{
"name": "xref",
"data": {
"text": "图8",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8"
}
]
}
},
{
"name": "text",
"data": "为NEC Micro-LED器件在一个交流信号周期内的能带及载流子输运示意图。当施加正向电压时，n-GaN区域内的自由电子与p-GaN区域内的空穴漂移到MQWs中并发生辐射复合"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "30",
"type": "bibr",
"rid": "R30",
"data": [
{
"name": "text",
"data": "30"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，如"
},
{
"name": "xref",
"data": {
"text": "图 8",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图 8"
}
]
}
},
{
"name": "text",
"data": "（a）所示。由于双绝缘层的存在，外部载流子无法注入Micro-LED器件，Micro-LED内部将很快重新建立热力学平衡，如"
},
{
"name": "xref",
"data": {
"text": "图8",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8"
}
]
}
},
{
"name": "text",
"data": "（b）所示因为多数载流子的漂移运动会在Micro-LED的两端形成一个类似PN结中空间电荷区的耗尽层，并产生一个感生电场屏蔽外电场。在感生电场的作用下，大部分载流子的扩散运动将被限制，导致辐射复合终止。在同一个周期内的反向偏压到来时，由于多数载流子的漂移，正半周期所形成的感生电场会被消除。当反向偏压增大到一定程度时，电子从p-GaN转移到n-GaN，空穴从n-GaN转移到p-GaN，如"
},
{
"name": "xref",
"data": {
"text": "图8",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8"
}
]
}
},
{
"name": "text",
"data": "（c）所示。最后，在反向偏压下器件会再一次达到热力学平衡，此时n-GaN和p-GaN都处于电荷累积状态，如"
},
{
"name": "xref",
"data": {
"text": "图8",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8"
}
]
}
},
{
"name": "text",
"data": "（d）所示。在n-GaN和 p-GaN积累的电子和空穴会形成电荷累积层，并产生屏蔽外部电场的感生电场。累积的电荷会在下一个周期的正偏压到来时用于辐射复合，感生电场也会随之消失。"
}
]
},
{
"name": "fig",
"data": {
"id": "F8",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图8"
}
],
"title": [
{
"name": "text",
"data": "NEC Micro-LED的能带及载流子输运示意图。 （a）正向偏置电压下的载流子转移示意图；（b）正向偏置电压下器件的稳态能带图；（c）反向偏置电压下的载流子转移示意图；（d）反向偏置电压下器件的稳态能带图。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.8"
}
],
"title": [
{
"name": "text",
"data": "Schematic of energy band and carrier transport of NEC Micro-LED device. （a）Schematic of carrier transfer under forward bias. （b）Schematic of steady-state energy band under forward bias. （c）Schematic of carrier transfer under reverse bias. （d）Schematic of steady-state energy band under reverse bias."
}
]
}
],
"subcaption": [],
"note": [],
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"data": [
{
"name": "text",
"data": "因此，NEC Micro-LED器件在周期性交流电场驱动下实现周期性发光，且在正向偏压电压下通过MQWs层载流子与反向偏压的相同。然而，由于电子在反向偏压下很难通过漂移运动跨越MQWs层，导致作用于电致发光的正向载流子受到反向载流子的限制。由于NEC Micro-LED器件发光的电子和空穴均来源于器件本身固有的载流子，没有外部注入，因此，NEC Micro-LED器件亮度会比直流电注入模式下低，未来可通过调整交流信号的电压幅值、频率等方法，也可通过改变器件两端绝缘层厚度来改善NEC Micro-LED器件的光电性能。"
}
]
}
]
},
{
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"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "5 结 论"
}
],
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"id": "s5"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本文设计了一种基于水平结构的NEC Micro-LED器件，并利用ALD技术在p-GaN和n-GaN两端沉积Al"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "O"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "绝缘层，实现器件与外部电极之间无电学接触，成功地制备了一种NEC Micro-LED器件，并研究了器件的"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "-"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "V"
}
]
},
{
"name": "text",
"data": "、"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "L"
}
]
},
{
"name": "text",
"data": "-"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "F"
}
]
},
{
"name": "text",
"data": "特性、发光延迟特性及"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Z"
}
]
},
{
"name": "text",
"data": "/"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "C"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "p"
}
]
},
{
"name": "text",
"data": "-"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "F"
}
]
},
{
"name": "text",
"data": "等光电特性。结果表明，NEC Micro-LED器件电路模型可等效成RC电路，等效阻抗随着频率的增大呈现先减小后趋于稳定趋势，且器件在频率53 MHz附近出现负电容现象。在固定频率下，回路等效阻抗也是固定的，器件"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "-"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "V"
}
]
},
{
"name": "text",
"data": "特性呈线性关系。随着频率增加，器件亮度呈现出先上升后下降的趋势，当频率"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "f"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "0"
}
]
},
{
"name": "text",
"data": "=25 MHz时，亮度达到最大。此外，由于整个回路的等效电路呈现容性，NEC Micro-LED器件具有发光延迟特性，即发光响应滞后于回路中的电流。NEC Micro-LED器件在交流电场驱动下能实现Micro-LED芯片内部固有载流子的周期性辐射复合发光，为未来Micro-LED显示技术发展提供了新思路。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本文专家审稿意见及作者回复内容的下载地址："
},
{
"name": "extlink",
"data": {
"text": [
{
"name": "text",
"data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220237."
}
],
"href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220237."
}
}
]
}
]
}
],
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"response": [],
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"acknowledgements": [],
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"citeme": [
{
"data": [
{
"name": "text",
"data": "许海龙,陈孔杰,陈培崎等.无电学接触型氮化镓基Micro⁃LED器件光电性能[J].发光学报,2022,43(10):1592-160010.37188/CJL.20220237."
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"text": "许海龙,陈孔杰,陈培崎等.无电学接触型氮化镓基Micro⁃LED器件光电性能[J].发光学报,2022,43(10):1592-160010.37188/CJL.20220237."
},
{
"data": [
{
"name": "text",
"data": "XU Hai-long,CHEN Kong-jie,CHEN Pei-qi,et al.Photoelectric Characteristics of Non-electric Contact GaN-based Micro-LED Device[J].Chinese Journal of Luminescence,2022,43(10):1592-160010.37188/CJL.20220237."
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"text": "XU Hai-long,CHEN Kong-jie,CHEN Pei-qi,et al.Photoelectric Characteristics of Non-electric Contact GaN-based Micro-LED Device[J].Chinese Journal of Luminescence,2022,43(10):1592-160010.37188/CJL.20220237."
}
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"fundinggroup": [
{
"lang": "zh",
"text": [
{
"name": "text",
"data": "国家重点研发计划（2021YFB3600402）； 闽都创新实验室自主部署项目（2021ZZ111，2021ZZ130）资助"
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"text": [
{
"name": "text",
"data": "Supported by National Key R&D Program of China（2021YFB3600402）； Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China（2021ZZ111，2021ZZ130）"
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]
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],
"history": {
"received": "2022-06-14",
"revised": "2022-07-04",
"ppub": "2022-10-05",
"opub": "2022-11-04"
}
},
"appendix": [],
"type": "research-article",
"ethics": [],
"supplementary": [],
"journalTitle": "发光学报",
"issue": "10",
"volume": "43",
"originalSource": []
}
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