基于激基复合物激发态的电致发光材料与器件研究进展 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于激基复合物激发态的电致发光材料与器件研究进展" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Research Progress of Electroluminescent Materials and Devices Based on Exciplex Excited State" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "梁", "givenname": "宝炎", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIANG", "givenname": "Baoyan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "梁宝炎（1992-），男，河北衡水人，博士，2020年于吉林大学获得博士学位，主要从事有机发光材料与器件的开发。 E-mail： liangby@jihualab.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941505&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941515&type=", "big": 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"text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "梁", "givenname": "洁", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIANG", "givenname": "Jie", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "毕", "givenname": "海", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "BI", "givenname": "Hai", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： bihai@jihualab.com", "data": [ { "name": "text", "data": "E-mail： bihai@jihualab.com" } ] } ], "bio": [ { "lang": "zh", "text": [ "毕海（1983-），男，黑龙江哈尔滨人，博士，特聘研究员，2014年于德国慕尼黑工业大学获得博士学位，主要从事有机半导体材料的开发、超分辨近场光学装备研发及单分子逻辑门器件 开发。 E-mail: bihai@jihualab.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941525&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941535&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941531&type=", "width": "24.89200020", "height": "29.88733673", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "毕海" }, { "name": "text", "data": "（1983-），男，黑龙江哈尔滨人，博士，特聘研究员，2014年于德国慕尼黑工业大学获得博士学位，主要从事有机半导体材料的开发、超分辨近场光学装备研发及单分子逻辑门器件 开发。 E-mail: " }, { "name": "text", "data": "bihai@jihualab.ac.cn" } ] ] } ], "email": "bihai@jihualab.ac.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "悦", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Yue", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" }, { "rid": "aff3", "text": "3" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "yuewang@jlu.edu.cn", "data": [ { "name": "text", "data": "yuewang@jlu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "王悦（1962-），男，黑龙江阿城人，博士，教授，1991年于吉林大学获得博士学位，主要从事有机超分子光电材料结构与性质、有机光电材料非共价制备、有机电致发光材料基础研究与应用技术开发。 E-mail: yuewang@jlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941540&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941551&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941548&type=", "width": "24.89200211", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "王悦" }, { "name": "text", "data": "（1962-），男，黑龙江阿城人，博士，教授，1991年于吉林大学获得博士学位，主要从事有机超分子光电材料结构与性质、有机光电材料非共价制备、有机电致发光材料基础研究与应用技术开发。 E-mail: " }, { "name": "text", "data": "yuewang@jlu.edu.cn" } ] ] } ], "email": "yuewang@jlu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "季华实验室， 广东 佛山　528000", "data": [ { "name": "text", "data": "季华实验室， 广东 佛山　528000" } ] }, { "lang": "en", "label": "1", "text": "Jihua Laboratory， Foshan 528000， China", "data": [ { "name": "text", "data": "Jihua Laboratory， Foshan 528000， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "季华恒烨（佛山）电子材料有限公司， 广东 佛山　528000", "data": [ { "name": "text", "data": "季华恒烨（佛山）电子材料有限公司， 广东 佛山　528000" } ] }, { "lang": "en", "label": "2", "text": "Jihua Hengye（Foshan） Electronic Materials Co.， Ltd.， Foshan 528000， China", "data": [ { "name": "text", "data": "Jihua Hengye（Foshan） Electronic Materials Co.， Ltd.， Foshan 528000， China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "吉林大学 有机聚合物光电材料教育部工程研究中心， 吉林 长春　130012", "data": [ { "name": "text", "data": "吉林大学 有机聚合物光电材料教育部工程研究中心， 吉林 长春　130012" } ] }, { "lang": "en", "label": "3", "text": "Engineering Research Center of Organic and Polymer Optoelectronic Materials， Ministry of Education， Jilin University， Changchun 130012， China", "data": [ { "name": "text", "data": "Engineering Research Center of Organic and Polymer Optoelectronic Materials， Ministry of Education， Jilin University， Changchun 130012， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "具有分子间电荷转移激发态特性的激基复合物（Exciplex）体系，由于前线分子轨道的分离特性——最高占有轨道（Highest occupied molecular orbital，HOMO）集中分布于给体分子上，最低空轨道（Lowest unoccupied molecular orbital，LUMO）集中分布于受体分子上，因此具有极小的单线态‐三线态能级差（Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "st" } ] }, { "name": "text", "data": "）以及热活化延迟荧光（Thermally activated delayed fluorescence，TADF）特性。因此，激基复合物体系的理论内量子效率可以达到100%。由于构建激基复合物体系的给体分子具有空穴传输特性，受体分子具有电子传输特性，因此，激基复合物体系具有平衡的载流子迁移特性，这使得激基复合物体系在作为发光层材料以及混合主体材料制备电致发光器件时具有平衡载流子迁移、扩大激子复合区域、提高器件效率以及降低效率滚降的优势。本文将讨论和总结基于激基复合物激发态体系的电致发光材料与器件基本原理、设计思路以及近期的研究进展。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Exciplex， characterized by intermolecular charge-transfer excited state， possesses tiny energy splitting between the first singlet state and triplet state and thus thermally activated delayed fluorescence （TADF） property， which is caused by the separated distribution of frontier molecular orbitals. The highest occupied molecular orbital （HOMO） mainly locates at the donor molecule and the lowest unoccupied molecular orbital （LUMO） mainly locates at the acceptor molecule. As a result， exciplex can achieve 100% internal quantum efficiency theoretically like intramolecular charge-transfer TADF materials. Moreover， the donor molecule usually is hole-transporting material and the acceptor molecule is electron-transporting material， which contributes to balanced carrier injection. And the electroluminescent devices based on exciplex systems as emitting layer or mixed hosts exhibit balanced carrier injection， enlarged exciton recombination region， improved efficiency and suppressed efficiency roll-off. In this mini review， ultimate principle， design strategy and recent research progress of electroluminescent materials and devices based on exciplex excited state will be discussed and summarized." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "激基复合物" } ], [ { "name": "text", "data": "热活化延迟荧光" } ], [ { "name": "text", "data": "有机电致发光材料与器件" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "exciplex" } ], [ { "name": "text", "data": "thermally activated delayed fluorescence" } ], [ { "name": "text", "data": "electroluminescent materials and devices" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "有机电致发光二极管（Organic light-emitting diode,OLED）具有主动发光、超轻薄、高对比度、适用温度范围广以及柔性显示等优势。基于OLED技术的显示屏已经成为目前中小尺寸屏幕的主流显示屏" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。研究机构CINNO Research的报告显示，2021年全球基于有源矩阵有机发光二极管（Active-matrix OLED，AMOLED）技术的智能手机面板出货同比增长36.3%，在中小尺寸面板的销售额方面已经超过了传统液晶显示（Liquid crystal display，LCD），占比55.8%，表明全球OLED显示产业正在飞速发展" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。有机电致发光材料作为OLED技术的核心内容，获得了长足的发展。第一代传统荧光材料只能利用25%的单线态激子发光；第二代磷光材料通过重原子（Ir、Pt等）引起的自旋-轨道耦合作用，使得三线态激子可以直接辐射跃迁回到基态发射磷光，其单线态激子可以通过系间窜越过程转变为三线态激子，然后发射磷光，因此磷光材料可以获得100%的激子利用率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2012年，日本九州大学Adachi等提出了热活化延迟荧光（Thermally activated delayed fluorescence，TADF）的理论，通过构建具有小的单线态-三线态能级差（∆" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "st" } ] }, { "name": "text", "data": "）的化合物，使得跃迁禁阻的三线态激子通过吸收环境中的热量，反系间窜越回到单线态，发射延迟荧光。因此，理论上TADF材料可以实现100%的内量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。TADF材料按照电荷转移方式可以分为分子内电荷转移和分子间电荷转移两大类。分子间的电荷转移是利用强电子给体分子与强电子受体分子，在两者的界面上形成电荷转移态，也就是激基复合物。由于电荷转移激发态特性，与基态相比，分子激发态构型转变较大，因此激基复合物与单分子给-受体TADF材料同样表现宽的发射光谱（半峰宽" }, { "name": "text", "data": ">" }, { "name": "text", "data": "80 nm）。激基复合物体系与分子内电荷转移型单分子TADF材料相比，其前线轨道分别集中于两分子上，最高占有轨道（Highest occupied molecular orbital，HOMO）与最低空轨道（Lowest unoccupied molecular orbital，LUMO）轨道重叠积分更小。因此，激基复合物体系往往表现出较低的荧光量子效率。构建激基复合物体系的电子给体材料与电子受体材料往往具有较强的空穴与电子传输性能，在器件制备时，可以作为空穴传输层与电子传输层材料。因此，在激基复合物电致发光器件中，载流子在传输过程中没有能量势垒，器件驱动电压更低，功率效率更高，器件结构简单，更适用于实际工业生产" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R5", "R6", "R7", "R8", "R9", "R10" ], "text": "5-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "激基复合物一直以来都不被看好，作为目标发光之外的一个中间体，会增加额外的非辐射或者辐射释放途径，通常导致器件额外的发射峰，光色差、效率低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R11", "R12", "R13" ], "text": "11-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。直到2012年，Adachi等报道了基于m-MTDATA和3TPYMB的激基复合物，尽管1∶1混合物薄膜的光致发光效率只有26%，但是其外量子效率达到了5.4%，反系间窜越效率达到了86.5%，这说明非辐射的三线态激子通过反系间窜越回到了单线态然后发射延迟荧光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。从此，科研人员展开了对激基复合物体系的研究，到目前为止，基于激基复合物发光体系的OLED器件的外量子效率已经超过了20%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R16", "R17", "R18", "R19", "R20" ], "text": "16-20", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。本文将讨论和总结基于激基复合物激发态体系作为发光材料以及主体材料的基本原理、设计思路以及近期的研究进展，并分析了其未来发展所面临的机遇和挑战。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　激基复合物体系" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "激基复合物体系由具有强给电子性质的给体分子和具有强吸电子性质的受体分子构成，激基复合物体系可以通过调节给体分子与受体分子的混合比例从而获得平衡的载流子迁移率，提升器件性能；激基复合物体系由于具有TADF特性，理论内量子效率可以达到100%。因此，激基复合物体系可以作为发光材料也可以作为主体材料。激基复合物可以将给、受体分子混合实现，也可以在给、受体分子的界面处形成。本节将讨论激基复合物的发光原理、激基复合物体系的设计思路、激基复合物体系作为发光材料以及主体材料的研究进展。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　激基复合物的发光机制" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "光致发光中，在光激发条件下，激基复合物中的电子给体材料或电子受体材料受到激发，两分子间通过电子交换形成激基复合物激发态；然后激基复合物的激子通过辐射复合产生光子，接着跃迁回基态。其过程可由" }, { "name": "xref", "data": { "text": "公式（1）", "type": "disp-formula", "rid": "DF1", "data": [ { "name": "text", "data": "公式（1）" } ] } }, { "name": "text", "data": "表示：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941559&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941555&type=", "width": "73.91400146", "height": "8.21266651", "fontsize": "" } } }, { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941569&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941564&type=", "width": "49.78400040", "height": "4.82600021", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "具体地，激基复合物中电子给体材料或电子受体材料的电子受激过程示意图如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）~（b）所示，相关激基复合物形成过程中的能级结构与相互关系可由" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（c）表示。其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D*" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "A*" } ] }, { "name": "text", "data": "分别表示激发电子给体材料和电子受体材料所需要的能量，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "exciplex" } ] }, { "name": "text", "data": "表示形成的激基复合物激发态的能量，-Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": "吉布斯能表示激基复合物形成过程中的驱动力。根据修正的伦姆-维勒方程，激基复合物形成过程中的吉布斯能可以由" }, { "name": "xref", "data": { "text": "公式（2）", "type": "disp-formula", "rid": "DF2", "data": [ { "name": "text", "data": "公式（2）" } ] } }, { "name": "text", "data": "表示：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（2）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941579&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941574&type=", "width": "38.60800171", "height": "3.97933316", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF2" } }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "激基复合物电子给体材料（a）与电子受体材料（b）受激和辐射跃迁过程以及能级结构（c）示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Schematic diagrams of exciplex formation caused by electron-donor（a） or electron-acceptor（b） stimulated and energy level structures（c）" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941583&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941592&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941588&type=", "width": "69.10662842", "height": "69.42666626", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "激基复合物体系的激发态能级可以根据" }, { "name": "xref", "data": { "text": "公式（3）", "type": "disp-formula", "rid": "DF3", "data": [ { "name": "text", "data": "公式（3）" } ] } }, { "name": "text", "data": "进行计算：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（3）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941603&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941598&type=", "width": "55.11800003", "height": "4.91066647", "fontsize": "" } } }, { "name": "text", "data": " " } ], "id": "DF3" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "exciplex" } ] }, { "name": "text", "data": "代表激基复合物的能量，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ox,D" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "red,A" } ] }, { "name": "text", "data": "分别代表给体材料的氧化电位以及受体材料的还原电位，constant为一个介于0~0.2 eV之间的常数" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R22", "R23", "R24", "R25" ], "text": "22-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D*" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "A*" } ] }, { "name": "text", "data": "激发能与材料的HOMO-LUMO能级差有关，而材料的HOMO、LUMO能级又可以根据循环伏安测试中的材料氧化电位与还原电位计算而来。因此，最终激基复合物形成的吉布斯能计算方法可由" }, { "name": "xref", "data": { "text": "公式（4）", "type": "disp-formula", "rid": "DF5", "data": [ { "name": "text", "data": "公式（4）" } ] } }, { "name": "text", "data": "表示：" } ] }, { "name": "dispformula", "data": { "label": [], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941612&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941608&type=", "width": "65.70133209", "height": "4.57200003", "fontsize": "" } } } ], "id": "DF4" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（4）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941621&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941616&type=", "width": "67.22533417", "height": "4.91066647", "fontsize": "" } } }, { "name": "text", "data": " " } ], "id": "DF5" } }, { "name": "p", "data": [ { "name": "text", "data": "综上，可以通过由电化学测试获得的电子给体与受体材料的氧化、还原电位来获得这两种材料在形成激基复合物过程中的吉布斯能。根据实验经验，-Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": "的值大于0.57 eV有利于激基复合物的形成。部分给-受体分子对的-Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": "值介于0.28~0.57 eV之间，仍可以形成激基复合物。因此，一般来说，电子给-受体对的吉布斯能-Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": "的值高于0.45 eV是衡量该分子对能否形成激基复合物的有效条件。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在电致发光器件中，激基复合物的发光是发生在电子给体材料与电子受体材料之间的电荷转移激发态发光。从阳极传输过来的空穴与从阴极传递过来的电子将会大量聚集在电子给体材料与电子受体材料的界面处。相互作用的库仑力使得电子-空穴受束缚成为激子，形成新的激发态，然后激子失活发射激基复合物的光，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。由于激基复合物体系的HOMO集中于电子给体材料上、LUMO集中于电子受体材料上，因而激基复合物激发态具有较小的前线轨道重叠程度，因此其Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "st" } ] }, { "name": "text", "data": "较小，具有明显的TADF特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R21", "R22", "R23", "R24", "R25" ], "text": "21-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "激基复合物电致发光原理示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Light emitting mechanism of exciplex-based electroluminescence" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941627&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941635&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941631&type=", "width": "77.91210938", "height": "35.53607178", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "因此，为了获得高效的激基复合物体系，激基复合物的电子给体材料以及受体材料需要满足以下基本要求：（1）电子给体材料与电子受体材料的HOMO能级差以及LUMO能级差要足够大（一般不小于0.4 eV），从而可以保证电子和空穴在给受体材料表面实现聚集形成激基复合物激发态。 （2）电子给体材料与电子受体材料具有良好的空穴和电子注入、传输能力，确保载流子的注入和平衡。 （3）电子给体材料与受体材料形成的激基复合物薄膜具有较高的荧光量子效率。首先，要保证电子给体材料与电子受体材料具有较高的三线态能级，防止激基复合物激发态三线态激子的能量回传是构造高效率激基复合物体系的前提。其次，激基复合物是激发条件下的电子转移过程，因此，在激发态条件下，电子给体材料与电子受体材料的电子耦合情况决定了激基复合物激发态的特性。激基复合物激发态是一种具有长程耦合作用的激发态，通过合理地调控电子给体材料与电子受体材料的结构、分子间距以及分子间超分子相互作用等方法，可以实现对于激基复合物薄膜荧光量子效率的调控。此外，充分利用具有TADF特性的激基复合物电子给体材料或电子受体材料可以实现激基复合物体系中的多重反系间窜越通道，从而提高激子的利用效率，降低三线态-三线态湮灭等消极因素，这也是提高激基复合物薄膜荧光量子效率以及器件表现的有效途径。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　激基复合物⁃发光材料" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "在激基复合物电致发光器件中，给体材料与受体材料可以按照一定的比例混合构成发光层，构建混合型激基复合物体系；给体材料与受体材料也可以不经混合，在其界面处形成电荷转移激发态，构建界面型激基复合物体系。此外，激基复合物激发态的电子-空穴具有长程耦合作用，电子给/受体材料之间存在一定的距离，同样可以实现激基复合物激发态的形成，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "界面型、共混型和长程耦合激基复合物激发态原理示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "Schematic diagrams of interface， bulk and long-coupled exciplex excited states." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941639&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941646&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941643&type=", "width": "121.15798950", "height": "48.93731689", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "2013年，Chou和Wong等报道了一种界面型激基复合物器件结构，并且在TCTA和3P-T2T的界面处观察到了激基复合物的发射，这表明注入的空穴与电子在两个材料的界面处形成了激子。TCTA与3P-T2T混合作为发光层的电致发光器件表现出相似的最大外量子效率（EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "=7.8%），但是由于混合型的发光层使得发光层中的空穴和电子传输更加平衡，空穴和电子相遇的几率增大，所以器件功率效率更大，亮度更高" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2016年，华南理工大学苏仕健等报道了基于TAPC和TmPyTZ的双层器件。通过控制TmPyTZ层的厚度在85 nm，不断调节TAPC层的厚度从20 nm到95 nm，得到了不同效率表现的器件。当TAPC的厚度为85 nm时器件表现出最高的效率为12.02%，功率效率为52.8 lm/W，开启电压为2.14 V，发射光谱峰值为552 nm，这一开启电压已经低于理论值2.25 V（根据电致发光光谱峰值552 nm的能量值为2.25 eV，再除以电子电荷得2.25 V）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。更换不同的给体材料TCTA、m-MTDATA、m-CzPTZ和p-CzPTZ所制备的器件均表现出优异的器件性能。2016年，Adachi等在给体材料m-MTDATA与受体材料T2T中间嵌入mCBP夹层，当mCBP的厚度控制在10 nm以下时，其电致发光器件光谱仍可以观测到m-MTDATA与T2T形成的激基复合物的发射光谱，而且不同厚度的mCBP夹层对于m-MTDATA/T2T激基复合物体系的激发态寿命以及效率均有影响。当夹层材料更换为三线态能级更低的ADN以及掺杂DBP于mCBP中，电致发光器件均表现出高效的能量转移。该研究表明激基复合物激发态是具有长程耦合作用的电子-空穴对，通过引入夹层材料可以有效地调控了该激基复合物的激发态性质以及能量转移特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。界面型激基复合物体系的相关性质总结在" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "中。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "界面型激基复合物性质总结" } ] }, { "lang": "en", "label": [ 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"27" } ] } }, { "name": "text", "data": "］" } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "TmPyTZ" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "2.42" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "568" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "6.53" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "22.8" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941653&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941650&type=", "width": "162.79998779", "height": "37.83803940", "fontsize": "" } } }, { "name": "p", "data": [ { "name": "text", "data": "界面型激基复合物电致发光器件的结构简单，驱动电压低，可以有效地调控激子复合区域；但是激子只集中于界面处，激子浓度高，器件的最大亮度低。因此，界面型激基复合物多被应用于主体材料。混合型激基复合物体系的电致发光器件整体性能优于界面型，研究报道相对较多。下面按照蓝光、绿光（黄光）、红光激基复合物材料体系进行总结。常见的激基复合物电子给体材料与受体材料的结构式如图" }, { "name": "xref", "data": { "text": "4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "~" }, { "name": "xref", "data": { "text": "6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "电子给体材料结构式" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Structural formula of electron-donor materials" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941657&type=", "small": 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"name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "D-A型激基复合物电子给/受体材料以及磷光型电子给体材料结构式" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "Structural formula of D-A type exciplex electron-donor/acceptor materials and phosphorescent type electron-donor materials" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941681&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941693&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941687&type=", "width": "163.00000000", "height": "144.17791748", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "蓝光激基复合物体系需要电子给受体材料具有较高的带隙以及较高的三线态能级。Chou等报道了一个全新的激基复合物电子受体材料PO-T2T，其HOMO能级为-6.83 eV, LUMO能级为-2.83 eV，三线态能级为2.99 eV。由于其深的HOMO能级、高的三线态能级以及较强的电子传输特性，使得其在制备高效的激基复合物体系中大放异彩，是激基复合物体系中的“明星”电子受体材料。本文选择具有不同HOMO能级的电子给体材料构建了全彩激基复合物体系（471~657 nm），最大外量子效率2.8%~6.2%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此后，基于CDBP、mCPPO1电子给体材料、PO-T2T电子受体材料的蓝光激基复合物体系被陆续报道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": ", " }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。苏州大学张晓宏等报道了基于三苯胺-“米基”硼给-受体结构的电子给体材料TPAPB，与TPBi构建蓝光激基复合物电致发光器件的发射峰位于468 nm，最大外量子效率（7.0±0.4）%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2020年，清华大学段炼等在3,3′-联咔唑以及三嗪基团上引入具有良好载流子迁移特性的π-共轭螺芴基团，增大电子给体分子和电子受体分子间距，从而降低其电子-空穴库伦引力，提高激基复合物能级。基于此，SPFCz/SFTRZ激基复合物的发射光谱蓝移至480 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些基于激基复合物的蓝光材料体系与基于分子内电荷转移特性的TADF材料相比，电致发光器件的效率偏低，但是蓝光激基复合物材料体系作为主体材料在电致发光器件中应用较广泛。混合型蓝光激基复合物体系的性质总结在" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": "中。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": 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"data": "[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "张晓宏等报道了基于DPTPCz电子受体材料以及NPB、TAPC、TCTA电子给体材料的激基复合物体系，其荧光量子效率分别为15%、68%、55%。由于NPB较低的三线态能级，因此，发生了能量回传，导致了较低的荧光量子效率以及电致发光效率。基于TAPC/DPTPCz激基复合物的电致发光器件表现出15.4%的最大外量子效率；基于NPB/DPTPCz激基复合物的电致发光器件由于较低的荧光量子效率以及激子利用率，其最大外量子效率仅为0.6%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。吉林大学王悦等报道了基于三嗪-苯并咪唑的电子受体材料PIM-TRZ，并使用TAPC、TCTA、Tris-PCz作为电子给体材料制备了激基复合物体系。其中TAPC/PIM-TRZ与TCTA/PIM-TRZ激基复合物薄膜表现出93.4%和90.9%的荧光量子效率。由于Tris- PCz较深的HOMO能级导致了Tris-PCz/PIM-TRZ体系的能级升高，高于PIM-TRZ的能级，因此存在能量回传的通道，导致其荧光量子效率较低（65.4%）。基于TAPC/PIM-TRZ的电致发光器件表现出21.7%的最大外量子效率以及97.3 lm/W的最大功率效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其他基于三嗪-苯并咪唑的电子受体材料也表现出优异的发光性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Wong等通过向电子给体材料中引入三苯基硅基以及叔丁基等位阻基团以抑制内转换等非辐射跃迁过程。以三苯基硅基修饰的DSDTAF与DTAF相比，其与3N-T2T构建的激基复合物表现出更高的荧光量子效率（0.59），叔丁基修饰的CPTBF与PO-T2T的激基复合物同样表现出了荧光量子效率的提升（0.41→0.44），最终均表现为电致发光器件效率的有效提升" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "2021年，张晓宏等设计了基于吩噁嗪的电子给体材料13PXZB与基于嘧啶-吡啶的同分异构体电子受体材料B4PyMPM、B3PyMPM、B2PyMPM。理论计算以及傅里叶变换红外光谱测试表明，对位吡啶电子受体材料B4PyMPM与13PXZB具有更多的分子间氢键相互作用，因此B4PyMPM/13PXZB表现出最高的荧光量子效率（69.6%），而且不同比例的给体材料与受体材料的氢键相互作用差异，导致了荧光量子效率的差异。基于9,9-二甲基吖啶的电子给体材料13AB无法与受体材料形成分子间氢键相互作用，因此表现出较低且相似的荧光量子效率。基于B4PyMPM/13PXZB的电致发光器件表现出14.6%的最大外量子效率，而且其器件寿命也明显优于其他体系，" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "=192 min，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "=520.9 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2[" }, { "name": "xref", "data": { "text": "36", "type": "bibr", "rid": "R36", "data": [ { "name": "text", "data": "36" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，合理地调控与利用激基复合物电子给体材料与受体材料分子间相互作用可以有效抑制激基复合物激发态的非辐射跃迁过程并提高器件的稳定性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在提升激子利用率方面，研究者们也进行了大量的科学研究工作。韩国首尔大学Kim等利用低温手段，提高激基复合物三线态激子的捕获" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "37", "type": "bibr", "rid": "R37", "data": [ { "name": "text", "data": "37" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在常温下，TCTA/B4PYMPM表现出48.3%的内量子效率以及11.0%的外量子效率，而在150 K，则表现出100%的内量子效率以及25.2%的外量子效率。这表明抑制激基复合物激发态的非辐射跃迁效率是提高电致发光器件性能的有效措施，但是低温条件实际应用困难" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "38", "type": "bibr", "rid": "R38", "data": [ { "name": "text", "data": "38" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2016年，张晓宏等利用具有TADF特性的MAC作为电子给体材料，使得激子通过在MAC激发态以及MAC/PO-T2T激发态进行两次反向系间窜越过程，降低了激子猝灭效应，提高了激子利用效率。基于MAC/PO-T2T的电致发光器件表现出17.8%的最大外量子效率。作为对比例，非TADF材料mCP与PO-T2T的激基复合物电致发光器件最大外量子效率仅为8.6%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "39", "type": "bibr", "rid": "R39", "data": [ { "name": "text", "data": "39" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此后，其又报道了基于DBT-SADF/CDBP/PO-T2T三元激基复合物体系，其中DBT-SADF为TADF材料，而且其与PO-T2T可以形成激基复合物激发态，同时，CDBP与PO-T2T也可以形成激基复合物激发态。因此，上述体系同时存在三重反系间窜越通道，最终实现了发光效率以及反系间窜越效率的提升，基于DBT-SADF/PO-T2T/CDBP的电致发光器件最大外量子效率达到20.5%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。成均馆大学Lee等报道了基于三元双激基复合物体系的电致发光器件，通过高能级的激基复合物激发态向低能级激基复合物激发态的能量转移，最终获得了17.5%的最大外量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Adachi等通过对比传统电子受体材料（SF3-TRZ、T2T）、给-受体型电子受体材料（Cz- TRZ）以及TADF型电子受体材料（BCz-TRZ、3Cz-TRZ）分别与电子给体材料Tris-PCz构建的激基复合物体系发现，TADF型电子受体材料由于具有三线态激子的反系间窜越过程，更为稳定，该体系的能量转移示意图如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示。基于Tris-PCz/3Cz-TRZ的激基复合物电致发光器件" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "为350 h，是基于D-A型非TADF受体材料Cz-TRZ寿命的3倍。而且，以该激基复合物作为TADF材料" }, { "name": "italic", "data": [ { "name": "text", "data": "v" } ] }, { "name": "text", "data": "-DABNA的共主体时，同样获得了超过300 h的" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "寿命（3.3 mA·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "）" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。该研究体现了TADF型激基复合物电子受体材料对激基复合物电致发光器件稳定性具有重要影响。在激基复合物体系的激发态中，HOMO集中于电子给体材料上，LUMO集中于电子受体材料上。由于这种很大程度上的前线轨道分离，激基复合物激发态往往表现出极小的Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ST" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "43", "type": "bibr", "rid": "R43", "data": [ { "name": "text", "data": "43" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着研究的深入，发现三线态激子的反系间窜越速率不仅仅与Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ST" } ] }, { "name": "text", "data": "有关，而且电子给体材料或受体材料的局域三线态（" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "LE）与激基复合物第一激发单线态（" }, { "name": "sup", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "CT）的自旋轨道耦合（Spin orbit coupling,SOC）也密切相关，其关系可用" }, { "name": "xref", "data": { "text": "公式（6）", "type": "disp-formula", "rid": "DF7", "data": [ { "name": "text", "data": "公式（6）" } ] } }, { "name": "text", "data": "表示：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（6）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941731&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941729&type=", "width": "34.96733475", "height": "15.23999977", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF7" } }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "TADF型激基复合物电子给/受体材料能量转移示 意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Schematic diagram of energy transfer based on TADF-type exciplex donor/acceptor" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941734&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941740&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941737&type=", "width": "77.10151672", "height": "31.79162598", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由于电子自旋方向的差异，" }, { "name": "sup", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "CT与" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "CT的自旋轨道耦合是禁阻的，" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "CT激子向" }, { "name": "sup", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "CT激子转变的途径是利用" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "LE与" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "CT和" }, { "name": "sup", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "CT的电子耦合。许多关于电子给体材料与受体材料" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "LE能级对于激基复合物激发态特性影响的工作被陆续报道。2018年，Adachi等通过对比硼配合物电子受体材料与电子给体材料的" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "LE以及激基复合物激发态的" }, { "name": "sup", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "CT和" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "CT能级的相对高低，获得了60%的TAPC/BFPD激基复合物的荧光量子效率。结果表明，" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "LE参与的" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "CT与" }, { "name": "sup", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "CT的反系间窜越过程有利于荧光量子效率以及反系间窜越效率的提高；而且不同的电子给/受体材料掺杂比例同样会影响三线态激子的利用以及发光效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2019年,苏仕健等报道了基于吩噻嗪单元的电子给体材料，通过对比基于不同的电子受体材料构建的激基复合物体系的能级结构发现，" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "LE" }, { "name": "sub", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "与" }, { "name": "sup", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "CT的能级差和" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "LE" }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "与" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "LE" }, { "name": "sub", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "的能级差越小，越有利于形成有效的自旋-轨道耦合与超精细结构耦合，提高TADF特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ",其原理示意图如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示。英国杜伦大学Data等的报道同样证明了电子给体/受体材料的三线态能级在激基复合物激发态反系间窜越过程中的重要作用，基于TSBPA/PO-T2T的电致发光器件表现出20%的最大外量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "激基复合物激发态反系间窜越过程中的自旋轨道耦合以及超精细结构耦合" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Schematic diagram showing SOC and HFC involved in RISC process of exciplex excited state" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941744&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941751&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=39941747&type=", "width": "77.56530762", "height": "34.08657837", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "红光激基复合物由于较低的荧光量子效率，导致其电致发光器件的效率普遍偏低。2016年，Data等报道了m-MTDATA与POZ-DBPHZ的近红外激基复合物电致发光器件，其发射峰位于741 nm，最大外量子效率为5%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "46", "type": "bibr", "rid": "R46", "data": [ { "name": "text", "data": "46" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2019年，Cheng等报道了基于DPSTPA/4CzIPN、DPSTPA/CzDBA的橙红光激基复合物体系，理论计算显示DPSTPA/4CzIPN中分子间距较大，电子给/体分子间相互作用较小，因此发光效率较低。基于DPSTPA/CzDBA的激基复合物电致发光器件表现出592 nm的发射峰以及（14.6±0.4）%的最大外量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "47", "type": "bibr", "rid": "R47", "data": [ { "name": "text", "data": "47" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2020年，苏州大学廖良生等报道了基于氰基取代的苊并吡嗪以及三联苯的电子受体材料APDC-tPh，由于三联苯的弱给电子作用，使得化合物保持了较深的LUMO能级（-3.95 eV），有助于构建红光激基复合物体系。基于TXO-TPA/APDC-tPh的激基复合物表现出0.09±0.01的荧光量子效率，其电致发光器件表现出704 nm的近红外发射以及1.27%的最大外量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "48", "type": "bibr", "rid": "R48", "data": [ { "name": "text", "data": "48" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。南京邮电大学黄维等报道了金属锰配合物DBFDPO-MnBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，由于其较浅的HOMO能级（-4.999 eV），在掺杂N型主体时（Bepp" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和TPBi），表现出红光激基复合物的电致发光光谱。其中DBFDPO-MnBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Bepp" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "进行1∶1掺杂时，其最大外量子效率为8.68%，发射峰位为604 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其后，太原理工大学赵波等与张晓宏等在金属铱配合物中发现了激基复合物。其中Ir（ppy）" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/PO-T2T表现出600 nm的红光发射以及5.7%的最大外量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。廖良生等同样报道了基于铱配合物电子给体材料的激基复合物近红外电致发光器件。其中，Ir（ppy）" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "acac/AQDC-tPh表现出748 nm的发射峰及0.19%的外量子效率；PO-01/AQDC-tPh表现出750 nm的发射光谱以及0.23%的最大外量子效率。基于PO-01/APDC-tPh的激基复合物电致发光器件表现出824 nm的发光峰以及" }, { "name": "text", "data": ">" }, { "name": "text", "data": "0.16%的最大外量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。综上所述，高效红光激基复合物体系目前较为稀少，利用具有TADF特性的受体材料以及利用含有重金属的磷光材料作为给体材料是目前开发高效红光激基复合物体系较为有效的策略。已报道的混合型红光激基复合物体系的相关性质总结在" }, { "name": "xref", "data": { "text": "表4", "type": "table", "rid": "T4", "data": [ { "name": "text", "data": "表4" } ] } }, { "name": "text", "data": "中。" } ] }, { "name": "table", "data": { "id": "T4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表4" } ], "title": [ { "name": "text", "data": "混合型红光激基复合物性质总结" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.4" } ], "title": [ { "name": "text", "data": "Summary of device performance of bulk exciplex with red emission" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": 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}, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } } ], "rid": [ "R52", "R53", "R54", "R55", "R56", "R57", "R58", "R59", "R60", "R61", "R62" ], "text": "52-62", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "张晓宏等报道了首个激基复合物共主体的荧光器件，使用TAPC/DPTPCz为共主体，C545T为发光材料，掺杂浓度为0.2%时，器件表现出14.5%的最大外量子效率以及100%的激子利用率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。中国科学院长春光学精密机械与物理研究所李文连等使用TCTA/3P-T2T作为红光材料DCJTB的共主体，其电致发光器件能量转移良好，表现出10.15%的最大外量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这些器件均表现出超过荧光材料5%的理论最大外量子效率。激基复合物作为荧光材料的主体时充分结合了激基复合物主体高效的三线态激子利用率以及荧光材料高效的发光效率。这种策略有利于发展全荧光低成本的高效有机电致发光器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "65", "type": "bibr", "rid": "R65", "data": [ { "name": "text", "data": "65" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } } ], "rid": [ "R65", "R66", "R67", "R68" ], "text": "65-68", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。激基复合物作为TADF材料的主体的优势主要体现在双重的反系间窜越通道更加减小了激子的猝灭，达到更加平衡的载流子迁移，扩大了激子复合区域，抑制了效率滚降" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } } ], "rid": [ "R69", "R70" ], "text": "69-70", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2017年，Kim等报道了基于TCTA/B3PYMPM的激基复合物共主体，以高效绿光DACT-Ⅱ为发光客体，器件获得了34.2%的最大外量子效率。对比CBP作为主体的器件，以激基复合物为主体的器件优势更体现在效率滚降上，100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "亮度下的效率滚降为1%，1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "亮度下的效率滚降为9%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。王悦等利用TCTA/PIM-TRZ共主体作为共振型TADF材料的共主体时，效率滚降同样受到了抑制，1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "亮度下外量子效率仍保持在20.1%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "72", "type": "bibr", "rid": "R72", "data": [ { "name": "text", "data": "72" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。激基复合物作为磷光材料的主体时，同样通过主体材料三线态激子的反系间窜越过程来降低磷光客体材料的三线态激子浓度，从而有效地抑制高电流密度下的效率滚降问题，更为重要的仍是激基复合物共主体平衡的载流子迁移率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "73", "type": "bibr", "rid": "R73", "data": [ { "name": "text", "data": "73" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，激基复合物共主体在有机电致白光器件中具有广泛的应用。黄维等设计了基于苯并咪唑-三苯基氧膦的电子受体材料pDPBITPO和DpPBITPO，其三线态能级为2.48 eV，与mCP（三线态能级为3.02 eV）形成的激基复合物的单线态/三线态能级也位于3.0 eV左右。虽然电子受体材料的三线态能级较低，存在激基复合物向电子受体能量转移的通道，但是通过掺杂蓝光TADF材料DMAC-DPS（三线态能级为2.8 eV）和黄光TADF材料4CzTPNBu（三线态能级为2.2 eV），可以保证激基复合物三线态向DMAC-DPS的能量转移，而4CzTPNBu则可以接受由激基复合物向电子受体转移的能量。因此，mCP∶PO acceptor→DMAC-DPS→PO acceptor→4CzTPNBu这种阶梯式能量转移方式，导致了器件内部100%的内量子效率，最大程度地降低了能量损失。因此，该纯有机的单发光层白光器件表现出108.2 lm/W的最大功率效率以及32.7%的最大外量子效率。基于该发光体系构建的8 cm×8 cm的白光器件同样表现出25.0%的最大外量子效率以及82.7 lm/W的最大功率效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，为设计高效激基复合物主体白光电致发光器件提供了思路。中国科学院长春应用化学研究所高分子物理与化学国家重点实验室王利祥等利用mCP与mSiTRZ（mCP：mSiTRZ三线态能级为3.15 eV）的界面激基复合物体系制备了全TADF的溶液加工电致白光器件，使用5CzTRZ（三线态能级2.90 eV）作为蓝色发光材料，dmACDBA（三线态能级~2.46 eV）作为黄色发光材料。由于该体系选择了具有高反系间窜越速率（1.15×10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": " s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）的5CzTRZ蓝光TADF材料以及激基复合物体系的高三线态能级保证了电致发光器件中高效的激子利用率，从而避免了三线态-三线态湮灭等激子猝灭效应。基于此，该全TADF白光溶液加工器件的最大外量子效率高达27.3%，并且将黄色发光材料替换为磷光材料Ir（Flpy-CF" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "-EG）" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "时，器件获得了31.1%的最大外量子效率以及93.5 lm/W的最大功率效率。其性能指标可以媲美蒸镀电致发光器件的器件表现" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结　　论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "由多分子构建的激基复合物激发态实现了前线轨道的分离，因此容易获得较小的单线态-三线态能级差以及高效的反系间窜越效率和三线态激子利用率。与此同时，电子给体材料与电子受体材料可以完全自由地按比例混合，从而获得完全意义上的载流子传输平衡，这对于提高激子复合效率、提高激子利用率、降低激子猝灭以及效率滚降具有重要意义。经过近10年的发展，基于激基复合物体系的电致发光器件的效率已经超过了20%，可以媲美一些单分子TADF材料。但是，激基复合物体系的发展仍面临诸多挑战。首先，激基复合物体系多集中于绿光材料，受限于深蓝光、蓝光激基复合物材料体系设计时需要宽带隙、高三线态能级的要求，深蓝光、蓝光体系很少，红光体系也饱受低效率的困扰。深蓝光和红光体系效率偏低已经成为发展激基复合物的瓶颈和难点，需要重点关注和加强研究。从分子设计角度，深蓝光、蓝光激基复合物体系的电子给体材料与电子受体材料要尽可能地减少共轭以提高带隙和三线态能级，避免引入给-受体型电子给体或受体材料，以致拉低带隙使光谱红移。此外，适当引入位阻基团，增大分子间距也是实现光谱蓝移的有效手段。红光激基复合物可以采用磷光配合物作为电子给体材料，利用重原子的旋轨耦合作用，提高三线态激子的利用率，是目前开发高效红光激基复合物体系的有效办法。另外，充分利用电子给体材料与受体材料成膜后的分子间超分子相互作用，抑制激基复合物激发态的内转换等非辐射跃迁，获得高效的激基复合物发光薄膜也是提高激基复合物荧光量子效率以及器件性能的有效办法。其次，激基复合物体系的光致发光效率普遍偏低，如何在提高其三线态激子利用率的同时，降低单线态和三线态激子的内转换等非辐射跃迁途径，是开发高效激基复合物体系必须解决的关键科学问题。最后，如何通过电致发光器件的设计，合理调控激子行为，充分利用激基复合物激子，也是开发高效激基复合物体系的有效途径。因此，在分子设计与选择上，除了关注电子给体材料与电子受体材料的前线轨道能级外，其三线态能级以及与所构造的激基复合物激发态的能级结构间的排列关系也非常重要，合理地通过分子设计精细地调节自旋轨道耦合以及超精细结构耦合作用，对提高激子利用率具有重要作用。此外，具有单分子TADF特性的电子给/受体材料的选择可以激活激基复合物激发态中多重反系间窜越通道，有利于电致发光器件效率和寿命的提升。在器件设计上，由于激基复合物激发态激子的长程耦合特性，可以采用夹层主体掺杂等策略精准调控激子行为。相信通过对材料和器件的不断深入研究，激基复合物激发态特性会有更加清晰的解释，其电致发光器件的综合性能也将会得到进一步提升，从而为平板显示和固态照明提供更多的材料选择。" 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