基于共价有机聚合物空穴注入层的钙钛矿发光二极管 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于共价有机聚合物空穴注入层的钙钛矿发光二极管" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Perovskite Light Emitting Diodes Using Covalent Organic Polymers as Hole Injection Layers" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "王", "givenname": "益飞", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Yi-fei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "王益飞（2000-），男，浙江宁波人，硕士研究生，2022年于南京理工大学获得学士学位，主要从事半导体材料与器件的研究。 E-mail： mrwyf@njust.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471531&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471573&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471568&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "王益飞" }, { "name": "text", "data": "（2000-），男，浙江宁波人，硕士研究生，2022年于南京理工大学获得学士学位，主要从事半导体材料与器件的研究。 E-mail： " }, { "name": "text", "data": "mrwyf@njust.edu.cn" } ] ] } ], "email": "mrwyf@njust.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "相", "givenname": "恒阳", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XIANG", "givenname": "Heng-yang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： Xiang.hengyang@njust.edu.cn", "data": [ { "name": "text", "data": "E-mail： Xiang.hengyang@njust.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "相恒阳（1990-），男，江苏赣榆人，博士，讲师，2019年于法国巴黎索邦大学获得博士学位，主要从事半导体材料与器件的研究。 E-mail： Xiang.hengyang@njust.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471578&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471588&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471583&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "相恒阳" }, { "name": "text", "data": "（1990-），男，江苏赣榆人，博士，讲师，2019年于法国巴黎索邦大学获得博士学位，主要从事半导体材料与器件的研究。 E-mail： " }, { "name": "text", "data": "Xiang.hengyang@njust.edu.cn" } ] ] } ], "email": "Xiang.hengyang@njust.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "周", "givenname": "怡辉", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHOU", "givenname": "Yi-hui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "雪丽", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Xue-li", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "润", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Run", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "徐", "givenname": "勃", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XU", "givenname": "Bo", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "君", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Jun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "伟金", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Wei-jin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "向", "givenname": "中华", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XIANG", "givenname": "Zhong-hua", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "xiangzh@mail.buct.edu.cn", "data": [ { "name": "text", "data": "xiangzh@mail.buct.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "向中华（1985-）,男，江西九江人，博士，教授，2013年于北京化工大学获得博士学位，主要从事分子能源材料开发、清洁能源的存储与转化技术、纳微多孔材料的研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471592&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471600&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471596&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "向中华" }, { "name": "text", "data": "（1985-）,男，江西九江人，博士，教授，2013年于北京化工大学获得博士学位，主要从事分子能源材料开发、清洁能源的存储与转化技术、纳微多孔材料的研究。" } ] ] } ], "email": "xiangzh@mail.buct.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "曾", "givenname": "海波", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZENG", "givenname": "Hai-bo", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor3", "lang": "en", "text": "zeng.haibo@njust.edu.cn", "data": [ { "name": "text", "data": "zeng.haibo@njust.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "曾海波（1977-），男，湖北鄂州人，博士，教授，博士生导师，2006年于中国科学院固体物理研究所获得博士学位，主要从事低维半导体材料与光电（显示、探测、隐身、能源）器件的研究。" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471607&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471619&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471612&type=", "width": "24.89202881", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "曾海波" }, { "name": "text", "data": "（1977-），男，湖北鄂州人，博士，教授，博士生导师，2006年于中国科学院固体物理研究所获得博士学位，主要从事低维半导体材料与光电（显示、探测、隐身、能源）器件的研究。" } ] ] } ], "email": "zeng.haibo@njust.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "南京理工大学材料科学与工程学院 新型显示材料与器件工信部重点实验室， 江苏 南京　210094", "data": [ { "name": "text", "data": "南京理工大学材料科学与工程学院 新型显示材料与器件工信部重点实验室， 江苏 南京　210094" } ] }, { "lang": "en", "label": "1", "text": "Key Laboratory of New Display Materials and Devices， Ministry of Industry and Information Technology， School of Materials Science and Engineering， Nanjing University of Science and Technology， Nanjing 210094， China", "data": [ { "name": "text", "data": "Key Laboratory of New Display Materials and Devices， Ministry of Industry and Information Technology， School of Materials Science and Engineering， Nanjing University of Science and Technology， Nanjing 210094， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "北京化工大学化学工程学院 有机⁃无机复合材料国家重点实验室， 北京　100029", "data": [ { "name": "text", "data": "北京化工大学化学工程学院 有机⁃无机复合材料国家重点实验室， 北京　100029" } ] }, { "lang": "en", "label": "2", "text": "State Key Laboratory of Organic-Inorganic Composite Materials， School of Chemical Engineering， Beijing University of Chemical Technology， Beijing 100029， China", "data": [ { "name": "text", "data": "State Key Laboratory of Organic-Inorganic Composite Materials， School of Chemical Engineering， Beijing University of Chemical Technology， Beijing 100029， China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "电磁环境效应与光电工程国家级重点实验室， 江苏 南京　210094", "data": [ { "name": "text", "data": "电磁环境效应与光电工程国家级重点实验室， 江苏 南京　210094" } ] }, { "lang": "en", "label": "3", "text": "National Key Laboratory on Electromagnetic Environmental Effects and Electro-optical Engineering， Nanjing 210094， China", "data": [ { "name": "text", "data": "National Key Laboratory on Electromagnetic Environmental Effects and Electro-optical Engineering， Nanjing 210094， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "卤化物钙钛矿（" }, { "name": "italic", "data": [ { "name": "text", "data": "ABX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）量子点及其发光器件具有色纯度高、外量子效率高以及在可见光范围内可调等特点，近年来在照明、显示等领域中展现出巨大潜力。然而，钙钛矿量子点发光二极管（PeQLEDs）的稳定性正成为制约其商业应用的最大障碍，除了钙钛矿发光层本身的稳定性问题之外，传输层的水氧稳定性问题也不可忽略。为了解决这一发展过程中的难题，我们提出了基于氮唑类单体构筑共价有机聚合物材料（COP‐N）替代传统的PEDOT∶PSS作为空穴注入层材料的新型PeQLEDs。我们发现COP‐N具有本征的水氧稳定性，且与PVK之间的空穴注入势垒更小。这些特性使得基于COP⁃N的PeQLED 在取得比PEDOT∶PSS更好发光效率的同时实现了近2倍的稳定性提升。我们认为，这种共价有机聚合物有望成为新型的空穴注入材料，实现高效稳定的钙钛矿电致发光，促进钙钛矿发光器件的发展。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Halide perovskite（" }, { "name": "italic", "data": [ { "name": "text", "data": "ABX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "） quantum dots and their light-emitting devices have the characteristics of high color purity， high luminous efficiency， and tunability in the visible light range. In recent years， they have shown great potential in lighting， display and other fields. However， the stability of perovskite quantum dot light-emitting diodes（PeQLEDs） is becoming the biggest obstacle to its commercial application. In addition to the stability of the perovskite light-emitting layer itself， the water-oxygen stability of the transport layer cannot be ignored. This work introduces a novel PeQLEDs that utilize an azole-based monomer-synthesized organic covalent polymer material（COP-N） instead of conventional PEDOT∶PSS as the hole injection layer material. We found that COP-N material has intrinsic water-oxygen stability， as well as a smaller hole injection barrier with PVK. These characteristics enable the COP-N-based PeQLED to achieve nearly twice the stability improvement while achieving better EQE than PEDO∶PSS. We believe that this organic covalent polymer material is expected to be a new type of hole injection material to achieve efficient and stable perovskite electroluminescent device， and promote the development of PeLEDs." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "共价有机聚合物" } ], [ { "name": "text", "data": "空穴注入层" } ], [ { "name": "text", "data": "钙钛矿量子点" } ], [ { "name": "text", "data": "发光二极管" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "covalent organic polymers" } ], [ { "name": "text", "data": "hole injection layer" } ], [ { "name": "text", "data": "perovskite quantum dots" } ], [ { "name": "text", "data": "light-emitting diodes" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "近年来，卤化物钙钛矿" }, { "name": "italic", "data": [ { "name": "text", "data": "ABX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（" }, { "name": "italic", "data": [ { "name": "text", "data": "ABX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "通常为有机基团或碱金属阳离子，" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "通常为金属阳离子，" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "通常为卤素阴离子）是最热门的直接带隙半导体之一，因此发展出多种多样的光电器件，包括太阳能电池" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、照明" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R3", "R4", "R5" ], "text": "3-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "与显示等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R6", "R7" ], "text": "6-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中铅卤钙钛矿因为具有量子点稳定性高、色纯度好、量子产率高的优势而从钙钛矿家族中脱颖而出" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R8", "R9", "R10", "R11", "R12", "R13" ], "text": "8-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。铅卤钙钛矿量子点的一大优势就是合成工艺简单且成本低，甚至室温合成条件就可以轻松实现分散性良好的钙钛矿量子点制备" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了实现高效的量子点发光器件，近年来基于溶液工艺的PeQLED以及与钙钛矿发光层相匹配的传输层材料被开发出来，且取得了接近理论极限的外量子效率（EQE）。Chiba等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用卤化的烷基铵和芳基铵盐对CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点进行阴离子交换，实现了最高EQE达到21.3%的基于OAM-I的红光钙钛矿量子点器件。Sargent等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用钙钛矿表面修饰实现由内部阴离子壳和阳离子与极性分子组成外壳的双极壳结构，实现了绿光22%的外量子效率。Edward等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过在用于量子点纯化的反溶剂中引入无机配体的方法，实现了EQE达到24.4%的稳定红光钙钛矿LED器件。这些PELEDs都采用高电导的PEDOT∶PSS材料来提高器件的综合性能，但PEDOT∶PSS材料自身具有一定的吸湿性和酸性，不可避免地会对氧化铟锡（ITO）电极造成腐蚀，影响器件的长期稳定性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R12", "R13" ], "text": "12-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "开发高性能的空穴注入层材料来制造PeQLED近年来成为备受关注的研究方向。金属氧化材料（氧化镍、氧化钼等）因具有良好的稳定性、高透明度和高载流子迁移率的优势，使得基于这类材料的QLEDs实现了较为高效稳定的发光，有望成为新的传输层材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但其较高的退火温度使其成本提升，不利于商业化进展。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "因此，PEDOT∶PSS替代材料的开发仍然是一个重大挑战。例如，2019年，Wang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "使用p型碳量子点（CQD）作为空穴注入层，获得了最大亮度、最大EQE分别达到25 770 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和13.8%的高性能绿光PeLED，并且开启电压仅为2.8 V。2020年，Ling等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "采用纳米级铯钨青铜（Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "0.32" } ] }, { "name": "text", "data": "WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）晶体作为空穴注入层，制备出了最大电流效率31.51 cd/A和最大EQE达到8.48%的全无机PeLED。2021年，Xu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用水溶性共轭聚电解质（TB（MA））替代传统的酸性PEDOT∶PSS作为空穴传输层，制备出了EQE达到13.5%、寿命达到290 s的蓝光PeLED。这些尝试展现了空穴注入材料改善对于QLEDs性能提升的巨大潜力。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "一种新型的共价有机聚合物（COPs）材料，因其具有较高的热稳定性、极低的密度、较大的比表面积、良好的结构裁剪性等显著优势，引起了我们的关注。COPs作为具有原子级精度的预先设计的骨架和纳米孔的一类重要材料，自2005年首次被报道以来得到迅速发展" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R19", "R20", "R21" ], "text": "19-21", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，在气体吸附、光电、催化等领域有较为广泛的应用。其中，基于氮唑类单体合成的共价有机聚合物材料（COP-N），由于其结构上同样存在共轭体系的π电子产生离域效应，能够赋予其高效的的空穴注入能力。同时，COP-N结构中的Zn" }, { "name": "sup", "data": [ { "name": "text", "data": "2+" } ] }, { "name": "text", "data": "离子中心进一步提升了其空穴注入能力，这已在多种空穴注入材料中得以证明" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } } ], "rid": [ "R22", "R23" ], "text": "22-23", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另外，COP-N薄膜具有聚合物材料的致密性和柔韧性，可以修饰ITO表面，通过改善阳极与空穴传输层的接触界面提高了器件的性能。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "因此，本文首次提出了采用COP-N作为PeQLEDs的空穴注入层并获得了高效且稳定的PeQLEDs。通过设计合理的器件结构ITO/COP-N/PVK/QDs/TPBi/LiF/Al改善了器件的注入性能。采用1.25 mg/mL COP-N溶液制备的PeQLED获得了较好的光电性质，其最大亮度、最大电流效率和峰值EQE分别为6 292.8 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、35.3 cd/A和10.1%，均超越了基于PEDOT∶PSS空穴注入层的器件。另外，得益于COP-N自身的稳定性与不易吸水的特性，其器件运行寿命达到了PEDOT∶PSS器件的近2倍，展现出其作为高效稳定空穴注入层的巨大潜力。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　量子点制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " PeQD的制备：将1.0 mL 0.085 mol/L Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "CO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和0.015 mol/L FA（Ac）的OTAc溶液与1 mL甲苯混合后于锥形瓶中迅速加入9 mL 0.1 mol/L PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "甲苯溶液（1 mmol PbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、0.15 mmol月桂基磺酸钠（SLS）和2.3 mmol TOAB溶解在10 mL甲苯里）。在室温下露天磁力搅拌5 min后，加入3 mL DDAB（10 mg/mL甲苯溶液）溶液以控制量子点的表面状态。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " PeQD的钝化以及提纯：在上述反应进行3 min后，将量比为1∶2的ZnBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和TOAB甲苯溶液添加到量子点粗溶液中，搅拌5 min以钝化量子点。然后，反应2 min后，在粗溶液中加入乙酸乙酯（体积比为2∶1），离心后得到沉淀并分散在甲苯中。对量子点进行第二次洗涤时，将额外的乙酸乙酯加入甲苯分散液中，收集沉淀物并重新分散在4 mL正辛烷中备用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } } ], "rid": [ "R24", "R25" ], "text": "24-25", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　样品表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "本文中采用ITO衬底制备QLED器件。在制备之前需要先对衬底进行清洗，清洗过程为：先后三次将ITO衬底浸没在丙酮中超声15 min；随后90 ℃烘烤15 min，去除衬底表面残留的丙酮；再将衬底在臭氧环境下用紫外线照射15 min以降低ITO的功函数。然后利用匀胶机涂布空穴注入层、空穴传输层以及钙钛矿量子点发光层。其中，在ITO玻璃基板上，PEDOT∶PSS薄膜以3 000 r/min的速度旋涂45 s，并在145 ℃下退火15 min；COP-N以DMSO为溶剂，以2 000 r/min转速旋涂45 s，之后120 ℃下退火20 min；空穴传输材料PVK以氯苯为溶剂，以2 000 r/min转速45 s涂布在COP-N薄膜上，之后在120 ℃下退火20 min；CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点分散在正辛烷中以2 000 r/min的转速在PVK薄膜上旋涂45 s；有机电子传输层TPBi、LiF层以及阴极Al采用真空蒸镀工艺沉积，其中TPBi层厚度为30 nm，LiF层厚度为0.5 nm，Al电极厚度为100 nm。器件制作过程中仅PEDOT∶PSS薄膜在大气环境下进行，其他涂布成膜工艺以及退火工艺均在氮气环境下进行。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　分析与测试" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "X射线衍射谱（XRD）通过Bruker D8 Advance衍射仪获得。UV/Vis吸收光谱通过Shimadzu 3600 UV/Vis分光光度计获得，PL光谱使用Varian Cary Eclipse仪器测量得到。紫外光电子能谱（UPS）由PHI 5000 VersaProbe Ⅲ和He Ⅰ源（21.22 eV）在施加9.0 V负偏压下测量得到。器件的电流密度-亮度-电压特性、EQE和电致发光（EL）光谱在室温下于大气环境中进行测试，通过集成LED测试系统（Everfine Photo-E-Info Co., Ltd.）获得，主要由Keithley 2400光源仪和Konica Minolta CS-2000光谱仪组成。器件寿命数据由Keithley 2400和CS-2000光谱仪组成的QLED老化寿命测试仪器测得。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　材料表征" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "是实验中使用的传输层材料COP-N和CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的光学性能表征。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（a）是COP-N溶液与CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的吸收光谱，可以看出COP-N在可见光范围的吸收强度微弱，不会对钙钛矿量子点的发光产生影响。其中的插图是实验使用的COP-N分子结构图，由于其结构上存在共轭体系的π电子，能够产生离域效应，具有提供空穴能力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另外，量子点的吸收特征峰在506 nm左右。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（b）为测试得到的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点PL光谱，其峰值为516 nm。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "（c）、（d）分别是量子点的TEM图以及XRD谱。由图中可以看出，所制备的CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿量子点形状大小较为均匀，且分散性好。本实验合成的钙钛矿量子点晶体结构由XRD数据测试并与PDF卡片对比，可以证实其为单斜晶相。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "COP-N和量子点性能表征。 （a）COP-N溶液与CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的吸收光谱，插图：COP-N分子式；（b）CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的PL光谱，插图：自然光以及紫外光下的量子点溶液；（c）CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的TEM图像；（d）CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "量子点的XRD谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Characterization of COP-N and quantum dots. （a）Absorption spectra of COP-N solution and CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " quantum dots. Inset： COP-N molecular formula. （b）PL spectrum of CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " quantum dots. Inset： quantum dot solutions under natural and UV light. （c）TEM image of CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " quantum dots. （d）XRD pattern of CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " quantum dots." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471624&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471630&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471626&type=", "width": "131.84332275", "height": "102.74118805", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　PeQLED结构" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）是测得的COP-N的UPS数据。分析该UPS图谱可以看到COP-N的HOMO能级较深，为-5.54 eV，同时由吸收谱可以得出其光学带隙约为2.45 eV，因此我们得到COP-N的LUMO能级为-3.09 eV。其能级示意图如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）所示。同时，我们还设计制备了两组单空穴器件，并采集电流密度-电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "）特性曲线来分析其空穴注入性能的差异。其器件结构为ITO/PEDOT∶PSS/PVK/QDs/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Al和ITO/COP-N/PVK/QDs/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Al，并对制得的器件进行性能测试，结果如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（c）所示。可以看到在2～4.6 V驱动电压时，PEDOT∶PSS器件的电流密度大于COP-N器件，表明其空穴注入能力优于COP-N材料；但在电压超过4.6 V时，COP-N材料的空穴注入能力反而超过PEDOT∶PSS。该结果表明，COP-N作为空穴注入层，其空穴注入能力与PEDOT∶PSS具有可比性，并且在高电压下具有更高的空穴注入能力。基于该实验，我们对QLED器件进行了结构设计与优化。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "（a）COP-N的UPS能谱；（b）COP-N的能级示意图；（c）不同空穴注入层单电子器件对比。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "（a）UPS energy spectrum of COP-N. （b）Schematic diagram of energy level of COP-N. （c）Comparison of single-electron devices with different hole injection layers." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471635&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471646&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471640&type=", "width": "159.40455627", "height": "43.86340332", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（a）是设计的钙钛矿电致发光器件结构示意图，其器件结构为：ITO/空穴注入层/PVK/QDs/TPBi/LiF/Al，其中空穴注入层是COP-N或PEDOT∶PSS。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（b）是器件的能级示意图，其中COP-N、PVK和QDs之间的能级势垒较小。与PEDOT∶PSS的HOMO（-5.1 eV）相比，COP-N的HOMO（-5.54 eV）更低，减少了空穴从注入层传输到传输层的势垒，有利于空穴的注入。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（c）为PEDOT∶PSS与不同浓度的COP-N溶液旋涂在ITO薄膜上的表面形貌，其中COP-N溶液浓度分别为1.25，2.5，5 mg/mL。其表面粗糙度也逐渐变大，PEDOT∶PSS薄膜的均方根粗糙度为1.16 nm，而COP-N则随着浓度的增大从2.31 nm逐步增大到2.89 nm。并且COP-N薄膜表面随着浓度增大，出现不规则的条纹状形貌。因此我们推测，随着溶液浓度的增加，COP-N在旋涂过程中的分散性变差，容易产生集聚，难以均匀地分散在ITO电极表面形成致密的薄膜；同时这也会导致器件的性能变差，使得空穴注入受到影响甚至在局部产生漏电流等，对器件寿命影响较大。因此我们采用浓度为1.25 mg/mL的COP-N溶液制备PeQLED器件。对比COP-N薄膜与PEDOT∶PSS薄膜，两者薄膜的表面粗糙度均较小且相对较为均一，其均匀性与致密度均较好。1.25 mg/mL的COP-N薄膜与PEDOT∶PSS薄膜均无明显的漏洞或者较大的起伏出现，因此两种材料制备的空穴注入层薄膜均可以实现较好的空穴注入作用以及ITO衬底表面修饰，使得器件获得较好的发光表现。" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "（d）~（f）分别为在ITO电极上制备了COP-N层、COP-N/PVK以及COP-N/PVK/QD层后的表面形貌，其均方根粗糙度分别为2.31，2.89，4.52 nm。由图像可以看出，制备的器件各层平整度较好，表明制备的薄膜质量较高，保证了器件的性能。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "PeQLEDs器件结构及COP-N层调控。 （a）设计的PeQLEDs结构示意图；（b）PeQLEDs能级示意图；（c）PEDOT∶PSS薄膜与不同浓度COP-N薄膜的AFM图像及薄膜的均方根粗糙度；（d）COP-N层AFM图像及其截面；（e）旋涂PVK层后的AFM图像及其截面；（f）旋涂量子点层后的AFM图像及其截面。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "PeQLEDs device structure and COP-N layer regulation. （a）Schematic diagram of the designed PeQLEDs structure. （b）Schematic diagram of energy levels of PeQLEDs. （c）AFM images of PEDOT∶PSS films and COP-N films with different concentrations and the root mean square roughness of the films. （d）COP-N Layer AFM image and its cross-section. （e）AFM image and cross-section after spin-coating the PVK layer. （f）AFM image and cross-section after spin-coating the quantum dot layer." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471652&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471664&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471657&type=", "width": "163.11669922", "height": "90.95855713", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　COP器件与PEDOT∶PSS器件性能对比" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "为了对比COP-N和PEDOT∶PSS两种空穴注入材料在器件性能上的表现，我们同时制备了COP-N和PEDOT∶PSS空穴注入层的钙钛矿发光器件，如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）为COP-N器件与PEDOT∶PSS器件在6 V的驱动电压下测得的EL光谱。由图中可知，PeQLED的EL峰位为517 nm，对应的半峰宽为19.2 nm。并且不同的空穴注入层材料对器件的发光峰并未产生位移。" }, { "name": "xref", "data": { "text": "图 4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图 4" } ] } }, { "name": "text", "data": "（b）~（f）是基于不同空穴注入层结构的器件性能对比图。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（b）是不同传输层器件的电流密度和亮度与驱动电压特性的关系。可以看出，当驱动电压大于4.6 V时，COP-N器件与PEDOT∶PSS器件相比，在同等电压下表现出较大的电流密度，表明电荷更加容易注入到器件中，这也与我们测得的空穴注入性能差异相符。这可能是由于COP-N的HOMO能级较深，降低了空穴注入层到PVK层之间的势垒，形成更匹配的阶梯状能级，有利于空穴注入；但其与ITO电极之间的势垒增大，使其在驱动电压较低的阶段，空穴注入不如PEDOT∶PSS器件。因此，COP-N器件虽然启亮电压较PEDOT∶PSS器件略有提高，但从" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（c）电压‑亮度曲线也可以看出，虽然PEDOT∶PSS器件的起亮电压略低一些，但COP-N器件的亮度提升更快，在6 V电压下就可以达到最大亮度6 292.8 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（d）、（e）是器件的亮度-电流效率特性曲线与亮度-外量子效率特性曲线，可以看出相较于PEDOT∶PSS器件，1.25 mg/mL COP-N器件的最大EQE以及最大电流效率均有一定的提升，其最大电流效率与最大EQE分别达到了35.3 cd/A和10.1%。对比两个器件，PEDOT∶PSS作为空穴注入层的器件峰值EQE为9.34%，其在1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "亮度下的EQE为7.41%，效率滚降为20.7%。而COP-N作为空穴注入层的器件峰值EQE为10.13%，在1 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "亮度下的EQE为7.85%，该器件的效率滚降为22.5%。可以看到COP-N器件的效率滚降比PEDOT∶PSS器件严重，但两者差异较小，仅为8%左右，这可能与两者的空穴注入性能随着电压变化有关。由此可见，采用COP-N作为空穴注入层对于提升卤化物钙钛矿发光二极管的性能方面具有一定的优势。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "PeQLEDs性能测试。 （a）COP-N器件与PEDOT∶PSS器件在6 V驱动电压下测得的归一化EL光谱；（b）不同传输层器件的电流密度与驱动电压特性的关系；（c）不同传输层器件的亮度电流密度与驱动电压特性的关系；（d）不同传输层器件的亮度-电流效率；（e）不同传输层器件的亮度-外量子效率特性。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "PeQLEDs performance test. （a）Normalized EL spectra measured at a driving voltage of 6 V for the COP-N device and the PEDOT∶PSS device. （b）Current density " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " driving voltage characteristics for different transport layer devices. （c）Brightness current density " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " driving voltage characteristics of devices with different transport layers. （d）Brightness-current efficiencies of devices with different transport layers. （e）Brightness-EQE characteristics of different transport layer devices." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471668&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471681&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471674&type=", "width": "156.60668945", "height": "80.76562500", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "许多研究表明，ITO/PEDOT∶PSS的界面化学反应问题严重影响着器件的工作寿命。ITO对酸性环境非常敏感，同时具有吸湿性的PSS易于吸收空气中的水，这会加速ITO的腐蚀，从而导致器件的稳定性下降" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R7", "R8" ], "text": "7-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。与PEDOT∶PSS相比，COP-N对水的亲润性较差的特性可以避免这一问题，从而延长器件的工作寿命。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "是COP-N薄膜与PEDOT∶PSS薄膜的接触角对比以及制备器件的寿命对比。通过" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）、（b）可以看出，PEDOT∶PSS对水的接触角更大，意味着更强的对水的亲润性，这也是由PEDOT∶PSS水溶液特性决定的。而COP-N薄膜对水滴的接触角小，意味着其在大气环境下不容易吸收环境中的水分，既避免了像PEDOT∶PSS那样吸水后产生弱酸性对ITO电极的腐蚀，也更利于器件长期稳定地运行。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（c）是两者器件的寿命对比，该测试在器件的初始亮度为100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "下进行，测试选择恒定电流密度模式。其中PEDOT∶PSS器件的测试电流密度为0.28 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，而COP-N器件的测试电流密度为0.38 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。在器件的测试过程中未进行封装，在大气环境下进行测试。其中PEDOT∶PSS器件寿命为" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50 " } ] }, { "name": "text", "data": "= 658 s，远小于COP-N器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50 " } ] }, { "name": "text", "data": "= 1 185 s。两器件间仅存在空穴注入层差异，其余各层均相同，因此寿命差异仅可能是空穴注入层不同造成的。由于钙钛矿材料的不稳定性，当器件电流密度增大时，会加快其离子迁移破坏钙钛矿的晶格结构，同时器件在工作状态下的热量积累也会导致钙钛矿发光层发生热降解" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } } ], "rid": [ "R27", "R28" ], "text": "27-28", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因此在更低电流密度下工作有利于器件的稳定运行。但COP-N器件相较于PEDOT∶PSS器件电流更大，却具有更长的运行寿命，这受益于COP-N空穴注入层具有更好的水氧稳定性优势。因此采用COP-N能够使得器件发光性能得到一定提升，同时具有更长的运行寿命。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "COP-N薄膜与PEDOT∶PSS薄膜对比。 （a）PEDOT∶PSS薄膜的接触角；（b）COP-N薄膜的接触角；（c）不同空穴注入层层器件寿命对比。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig 5" } ], "title": [ { "name": "text", "data": "Comparison of COP-N film and PEDOT∶PSS film. （a）Contact angle of PEDOT∶PSS film. （b）Contact angle of the COP-N film. （c）Lifetime comparison of devices with different hole injection layers." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471685&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471695&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36471690&type=", "width": "158.76300049", "height": "43.17124939", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文基于溶液法工艺使用COP-N制备了PeQLED，实现了高效且稳定的绿光电致发光。与传统PEDOT∶PSS的器件相比，其寿命提高近2倍。同时通过对COP-N浓度的调控，可以有效改善器件的电学性能。使用浓度为1.25 mg/mL的COP-N溶液的器件性能最为优异，其最大亮度、最大电流效率和峰值EQE分别为6 292.8 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、35.3 cd/A和10.1%。我们认为这类COPs材料有望作为高性能的空穴注入层材料，推动钙钛矿发光器件的稳定性提升及其应用发展。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220147." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220147." } } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIN R X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "XU J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WEI M Y" 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