基于CuSCN/Cs₃Bi₂I₆Br₃纳米薄膜的p‐i‐n型光电探测器 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "纳米薄膜的p‐i‐n型光电探测器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "All-inorganic p-i-n Photodetector Based on Lead-free CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": 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"李根（1990-），男，湖北黄冈人，博士，副教授，硕士生导师，2019年于兰州大学获得博士学位，主要从事固体发光材料方面的研究。 E-mail： genli@hubu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865149&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865151&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865150&type=", "width": "24.89200020", "height": "29.88732910", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "李根" }, { "name": "text", "data": "（1990-），男，湖北黄冈人，博士，副教授，硕士生导师，2019年于兰州大学获得博士学位，主要从事固体发光材料方面的研究。 E-mail： " }, { "name": "text", "data": "genli@hubu.edu.cn" } ] ] } ], "email": "genli@hubu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "曾", "givenname": "敏", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZENG", "givenname": "Min", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], 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"prefix": "" }, { "lang": "en", "surname": "GU", "givenname": "Hao-shuang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "岳彬", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Yue-bin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "ybli@hubu.edu.cn", "data": [ { "name": "text", "data": "ybli@hubu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "李岳彬（1983-），男，湖北黄冈人，博士，教授，博士生导师，2011年于华中科技大学获得博士学位，主要从事发光材料与器件方面的研究。 E-mail： ybli@hubu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865152&type=", "small": 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and Devices， College of Physics and Electronic Science， Hubei University， Wuhan 430062， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "湖北大学 有机功能分子合成与应用教育部重点实验室， 湖北 武汉　430062", "data": [ { "name": "text", "data": "湖北大学 有机功能分子合成与应用教育部重点实验室， 湖北 武汉　430062" } ] }, { "lang": "en", "label": "2", "text": "Ministry⁃of⁃Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules， Hubei University， Wuhan 430062， China", "data": [ { "name": "text", "data": "Ministry⁃of⁃Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules， Hubei University， Wuhan 430062， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "卤化铅钙钛矿具有高光吸收系数、长载流子扩散长度和高荧光量子效率等优异光电特性，成为当下光电探测器（PDs）研究领域的热点。但卤化铅钙钛矿的高生物毒性和低环境稳定性制约了该类器件的发展和应用，因此寻找低毒稳定的材料尤为重要。到目前为止，Sn、Ge、Sb、Bi等材料都已得到研究，其中铋基钙钛矿因其稳定、无毒和宽带隙等特性成为候选材料之一。影响PDs性能的因素很多，其中抑制暗电流是提升器件性能的重要手段之一。本文通过溶液旋涂无机化合物CuSCN取代传统PEDOT∶PSS作为空穴传输层（HTL），制备了结构为ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag的p‐i‐n型光电探测器。CuSCN最低未占分子轨道（LUMO）能级为 -1.5 eV，与ITO电子注入势垒高达3.3 eV，远高于PEDOT∶PSS与ITO的电子注入势垒（1.8 eV），反向偏压下工作更能有效阻挡电子从ITO电极的注入，因此降低了探测器的暗电流。器件在自供电条件425 nm单色光照射下光电流达6.87×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6 " } ] }, { "name": "text", "data": "A，暗电流低至3.52×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-11 " } ] }, { "name": "text", "data": "A，开关比超过10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "，相比于基于PEDOT∶PSS空穴传输层的探测器提升了2个数量级。此外，该探测器的上升和下降时间都小于0.12 s，均优于基于PEDOT∶PSS空穴传输层的探测器，这可归因于CuSCN比PEDOT∶PSS具有更高的载流子传输迁移率。结果表明，ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag结构的光电探测器具有自供电、高开关比、稳定、无毒等优点，为实现商业化提供了一种可行策略。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Lead halide perovskite is a popular research field in photodetectors（PDs） due to its excellent photoelectric characteristics such as high light absorption coefficient， long carrier diffusion length and high fluorescence quantum efficiency. However， heavy biological toxicity and low environmental stability restrict the development and application of this kind of devices. So far， Sn， Ge， Sb， Bi and other materials have been studied， in which bismuth-based perovskites have become one of the candidate materials due to stability， non-toxicity and wide band gap. The performance of PDs is limited by many factors， and dark current suppression is one of the important means to improve device performance. Based on the traditional hole transport layer（HTL） of PEDOT∶PSS replaced by the inorganic compound CuSCN through spin-coating， the p-i-n type photodetectors with an architecture of ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag were fabricated. CuSCN can effectively block electron injecting through the interface between the hole transport layer and the perovskite absorption layer， because the lowest unoccupied molecular orbital（LUMO） energy level of CuSCN is -1.5 eV， the electron injection barrier with ITO is as high as 3.3 eV， which is much higher than that of PEDOT∶PSS and ITO（1.8 eV）. Under self-powered condition， the dark current of the device was as low as 3.52×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-11 " } ] }, { "name": "text", "data": "A. Its on/off ratio reaches 10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "， which is two orders of magnitude higher than the detector of PEDOT∶PSS. In addition， the rise and fall time of the detector are less than 0.1 s and 0.12 s， which are better than the detector of PEDOT∶PSS. This result can be attributed to the higher carrier transport mobility of CuSCN higher than PEDOT∶PSS. The results show that the structure of ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag photodetector posseses many characteristics， such as self-driven， high on/off ratio， non-toxic and stable. It provides a feasible strategy for realizing commercialization." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "无铅钙钛矿" } ], [ { "name": "text", "data": "光电探测器" } ], [ { "name": "text", "data": "空穴传输层" } ], [ { "name": "text", "data": "暗电流" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "lead-free perovskite" } ], [ { "name": "text", "data": "photodetector" } ], [ { "name": "text", "data": "hole transport layer" } ], [ { "name": "text", "data": "dark current" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "光电探测器（PDs）是一类可以直接将入射光能量转换为电信号的光电器件，作为光电信号转换系统的重要组成部分，在医疗仪器成像、工业自动化生产、光纤通信系统、军事预测以及灾害预警等相关领域发挥着不可或缺的作用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R1", "R2", "R3" ], "text": "1-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。一个优异的光电探测器应具有低工作电压、低噪声、高开关比、高响应度、高探测率、快速响应和良好的线性响应等性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。根据吸光层两侧电子和空穴传输层的制备顺序，光电探测器可分为p‐i-n型和n-i-p型两种类型，也称为“反型”和“正型”。其中基于p-i-n型结构的PDs在制备工艺上更为成熟并得到广泛应用，且载流子传输层可用室温溶液法来制备，无需额外的添加剂和高温处理，极大地降低了制备成本" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了使PDs在工作时具有更小的电流回滞，通常在选择空穴传输层/吸光层界面时需考虑更佳的能级匹配，以此达到更好的传输效果" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在过去的几十年里，宽带隙半导体光电探测器因其合适的直接带隙和低成本而得到了广泛的研究，如（Al）GaN" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、AlN" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、ZnO" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等。然而，第三类氮化物通常需要通过相对昂贵的方法合成，如气相、液态-固体或外延，导致成本较高，从而阻碍了其商业应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而基于金属氧化物的光电探测器存在由表面和体深层次缺陷引起的持久光电导（PPC），导致响应拖尾较长" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。钙钛矿作为一种新型吸光层材料，兼具有机与无机化合物的优点，如类似于有机物的结构可调、可溶液制备、可制备柔性器件和操作简单等，以及无机化合物的高载流子迁移率、低激子束缚能、稳定性好等特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。其中卤化铅钙钛矿材料因其独特的光电性能（高载流子迁移率、高光吸收系数和长载流子扩散长度）而引起了广泛关注，并在光电器件领域取得了重大进展" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } } ], "rid": [ "R15", "R16" ], "text": "15-16", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Bao团队制备了高性能的p-i-n型CsPbI" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3-" } ] }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "薄膜光电探测器，其中CsPbIBr" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "基探测器可以检测到低至21.5 pW·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "的微弱光，响应时间可达ns级，该探测器在-0.3 V偏压下的暗电流低至6.0×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-9" } ] }, { "name": "text", "data": " A" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，表现出优异的探测性能。然而，卤化铅钙钛矿的毒性和不稳定性促使人们开始探索钙钛矿领域中铅的取代，到目前为止，Sn、Ge、Sb、Bi等材料都引起了人们的广泛关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。鉴于Sn、Ge在空气氛围中极易被氧化，无毒低价且高稳定的Bi成为更有潜力的替代物。Liu课题组首次研究了全无机Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "9-" } ] }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "钙钛矿p-i-n型光电探测器，其中基于Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的自供电光电探测器表现出最佳性能，在0 V偏压下具有4.1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "的灵敏度，响应度和探测率分别达到15 mA/W和4.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "11 " } ] }, { "name": "text", "data": "Jones" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由于铋基钙钛矿薄膜的高稳定性，全无机Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿光电探测器在空气环境中表现出优异的稳定性，三个月后其光电流值可以达到初始值96%以上。虽然该项工作为稳定高效的无铅光电探测器的设计提供了一种思路，但较高的暗电流限制了器件对光探测的灵敏度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "空穴传输材料（HTMs）作为钙钛矿PD的关键组成部分之一，不仅可以在钙钛矿/HTM界面提供有效的电子阻挡、空穴传输和提取，还可以减少来自周围环境和电极金属扩散的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。HTMs应具有良好的材料稳定性和与钙钛矿的化学相容性，可以有效地提高器件寿命。传统的PEDOT∶PSS作为常用有机HTM，通常与ITO组合使用，其-5.0 eV的功函数可与钙钛矿层能级匹配，但PEDOT∶PSS本身具有酸性，长时间使用后会腐蚀ITO电极，影响器件正常工作。除了有机HTMs，更稳定的无机HTMs如CuI、CuSCN、NiO和Cu" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O，也已在光电器件中进行了研究。该类材料具有透光率好、迁移率高和抗降解性强等优势，能够实现制备高性能的器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } } ], "rid": [ "R21", "R22" ], "text": "21-22", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，使无机HTMs成为一类有前景的材料。其中硫氰酸亚铜（Cuprousthiocyanate，CuSCN）是一种低廉且丰富的单电离铜金属类卤化物，其薄膜可以使用简单的溶液法制备并表现出良好的特性，包括在可见光范围内的高透明度（" }, { "name": "text", "data": ">" }, { "name": "text", "data": "98%）、优异的空穴迁移率（" }, { "name": "text", "data": ">" }, { "name": "text", "data": "0.01 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "） 以及适合空穴传输和电子阻挡的能级排列，价带最大值（VBM）约为5.2 eV，导带最小值（CBM）约为 1.5 eV，已经得到研究者们的重视" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文通过溶液旋涂制备了p-i-n 型Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜光电探测器。由于CuSCN的最低未占分子轨道（LUMO）能级比PEDOT∶PSS更高，能够有效阻挡电子注入，从而降低了暗电流，ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag光电探测器在自供电条件下开关比高达10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "。此外，该探测器的上升和下降时间分别小于0.1 s和0.12 s，皆优于传统PEDOT∶PSS空穴传输层的探测器，归因于CuSCN比PEDOT∶PSS具有更高的载流子传输迁移率。在稳定性方面，探测器开关工作1 h内光暗电流值大小无明显衰退，为实现稳定的高性能光电探测器提供了一种可行策略。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　实验用品" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "碘化铋（BiI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，98%）、碘化铯（CsI，99%）、溴化铋（BiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，≥98%）、溴化铯（CsBr，99%）、硫氰酸亚铜（CuSCN，99%）、N-N二甲基甲酰胺（DMF，99.5%）、二甲基亚砜（DMSO，99.8%）、二乙硫醚（C" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "H" }, { "name": "sub", "data": [ { "name": "text", "data": "10" } ] }, { "name": "text", "data": "S， 98%）、PEDOT∶PSS溶液购于西安宝莱特光电科技公司，不做进一步处理。ITO导电玻璃购于辽宁优选科技有限公司，规格如下：面积为 2 cm×2 cm，厚度是1.8 mm，方阻≤10 Ω。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　器件制备" } ], "level": "2", "id": "s2b" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2.1　ITO清洗" } ], "level": "3", "id": "s2b1" } }, { "name": "p", "data": [ { "name": "text", "data": "将ITO导电玻璃放在超声波清洗机中，ITO导电玻璃依次用丙酮、酒精和去离子水超声清洗20 min，去除表面杂质。清洗完毕后使用氮气烘干并在紫外臭氧环境下静置15 min，目的是提高表面吸附性。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2.2　CuSCN、PEDOT∶PSS制备" } ], "level": "3", "id": "s2b2" } }, { "name": "p", "data": [ { "name": "text", "data": "CuSCN：称取0.25 mg CuSCN粉末溶于1 mL二乙硫醚，在真空状态下搅拌，充分溶解后在手套箱中用移液枪取适量滴加在处理后的ITO导电玻璃上，当整个ITO表面被CuSCN溶液均匀铺满后开始旋涂，调节旋涂仪转速为2 000 r/min，旋涂时间为30 s，旋涂完毕后立即转移到150 ℃的加热台上退火15 min。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "PEDOT∶PSS：取适量PEDOT∶PSS原溶液过滤以去除杂质和大颗粒，用移液枪滴加在洗净后的ITO导电玻璃上，ITO表面铺满原溶液后以2 000 r/min的速度旋涂30 s，完毕后立即转移至140~150 ℃的加热台上退火15 min。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2.3　Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "制备" } ], "level": "3", "id": "s2b3" } }, { "name": "p", "data": [ { "name": "text", "data": "按照计算好的配比用量称取BiI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、CsI、BiBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、 CsBr四种材料放入5 mL试剂玻璃瓶中，用移液枪吸取0.8 mL的DMF和0.2 mL的DMSO混合溶液加入其中，在手套箱内65 ℃恒温搅拌12 h至充分溶解。取60 μL的Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "9-" } ] }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Br" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "样品溶液滴加在空穴传输层上并铺满整个表面，以2 500 r/min转速旋涂40 s，反溶剂乙醚冲洗后迅速用镊子夹取转移至150 ℃的数显恒温加热台退火20 min，最终得到Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2.4　ZnO制备" } ], "level": "3", "id": "s2b4" } }, { "name": "p", "data": [ { "name": "text", "data": "在吸光层上固定不锈钢掩模版并放入磁控溅射仪中，掩模版露出的有效面积为0.04 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，抽真空至10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5 " } ] }, { "name": "text", "data": "Pa溅射ZnO靶材（ONA，99.99%），60 s后得到一层厚度约为50 nm左右的电子传输层。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2.5　Ag电极制备" } ], "level": "3", "id": "s2b5" } }, { "name": "p", "data": [ { "name": "text", "data": "将溅射电子传输层后的衬底放入真空热蒸镀仪中的托盘上，截取约1 cm长的高纯银丝（99.99%）放入钨篮中。调节电流强度开启蒸镀模式，高温促使银丝蒸发为气体，当接触到未被掩膜版掩盖的ZnO表面，冷却形成Ag电极，有效面积为0.04 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，整个探测器完成。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　器件表征" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "光电测试系统所在实验室环境处于密闭且室温（298 K）状态，在黑暗条件下进行单色光源测试更为可靠。将制备好的光电探测器与吉时利2611B数字源表正负极相连接，LED光源与函数信号发生器相连，调节光源输出波形和频率，然后打开计算机软件Kickstart，设置测试所需的类型。测试电流" }, { "name": "italic", "data": [ { "name": "text", "data": "‐" } ] }, { "name": "text", "data": "电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "I‐V" } ] }, { "name": "text", "data": "）特性响应，控制电压范围在 -0.6~0.6 V，分别测试黑暗条件下和单色光源照射条件下的电流变化，得到" }, { "name": "italic", "data": [ { "name": "text", "data": "I‐V" } ] }, { "name": "text", "data": "曲线。然后测试器件的电流-时间（" }, { "name": "italic", "data": [ { "name": "text", "data": "I‐t" } ] }, { "name": "text", "data": "）特性响应时，使探测器外加偏压恒定，通过调节函数发生器提供的矩形波信号频率控制LED单色光源开关周期，得到" }, { "name": "italic", "data": [ { "name": "text", "data": "I‐t" } ] }, { "name": "text", "data": "曲线。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　材料表征" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "是所制备的Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": "两种薄膜的XRD谱，其中Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": "薄膜的衍射峰位置均与" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "63/" }, { "name": "italic", "data": [ { "name": "text", "data": "mmc" } ] }, { "name": "text", "data": "相Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": "的XRD标准卡片（PDF#23-0847）基本相同，Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": "最佳取向在2" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "=25°附近，对应（006）晶面。Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "由于Br离子取代了八面体位于桥接位置的I离子，形成稳定的混合结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，（006）晶面与右侧的（202）晶面融合，并伴随轻微的红移现象，高度增强且尖锐，表明Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜具有较优异的结晶度。吸光层薄膜结晶度的好坏会直接影响器件的光电性能。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "与Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": "薄膜的X射线衍射谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "X-ray diffraction pattern of Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " and Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "9" } ] }, { "name": "text", "data": " films" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865155&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865157&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865156&type=", "width": "62.20414734", "height": "52.29731750", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在旋涂制备钙钛矿薄膜时，需要在特定的时间对薄膜进行反溶剂冲洗处理，以促进钙钛矿薄膜的结晶过程" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为此选择了甲苯、乙醚、异丙醇三种不同类型的反溶剂（40 μL）进行冲洗，冲洗时间在旋涂开始后第25 s。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "是未经冲洗和分别使用三种反溶剂冲洗并退火（150 ℃）后得到的Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜表面SEM图像。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（a）是无任何反溶剂冲洗的薄膜，膜层并不连续，这是因为样品溶液中的溶剂没有全部挥发。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（b）是使用甲苯溶剂冲洗后的薄膜，质量得到提升，但表面依旧存在空洞和缺陷。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（c）是选择乙醚做为反溶剂时制备的薄膜，表面最为平整致密，粗糙程度低，大幅改善了Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的形貌，能够更好地贴合电子传输层从而提高性能。" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "（d）是异丙醇冲洗的薄膜，相比于其他两种反溶剂冲洗得到的薄膜质量最差，缺陷明显增多，不利于后续器件制备。因此，最终确定在旋涂开始后第25 s使用40 μL乙醚冲洗Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同反溶剂冲洗Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜的表面形貌。未冲洗（a），甲苯（b）、乙醚（c）和异丙醇（d）冲洗后的薄膜表面SEM图像。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "Surface morphologies of Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " films washed with different anti-solvents. （a）Unrinsed. Toluene（b）， ether（c） and isopropanol（d） rinsed SEM images of the film surface." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865158&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865160&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865159&type=", "width": "74.97528076", "height": "57.13586426", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "制备过程中为了探究两种空穴传输层对钙钛矿吸光层的光学吸收有无影响，测试了PEDOT∶PSS/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "两种结构的薄膜UV-Vis吸收（如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示），并与单一Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "薄膜进行对比。由" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "可知它们在525 nm处都有一个明显的吸收峰，且吸收波形几乎一致，说明有机物PEDOT∶PSS和无机物CuSCN两种空穴传输层在该波段内无明显吸收，不会对钙钛矿薄膜的吸光有较大影响。而CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "结构的薄膜明显要比PEDOT∶PSS/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "结构的吸收更好，表明CuSCN具有更高的透光率。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "HTL（PEDOT∶PSS或CuSCN）/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "与Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "钙钛矿薄膜的UV-Vis吸收光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "UV-Vis absorption spectra of HTL（PEDOT∶PSS or CuSCN）/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " and Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " perovskite film" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865161&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865164&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865162&type=", "width": "62.96565247", "height": "52.29731750", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　器件结构与材料能级" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（a）是上述制备的两种基于不同空穴传输层（PEDOT∶PSS或CuSCN）器件的结构示意图，自下而上依次为ITO层、HTL层、Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "吸光层、ZnO层和Ag电极层。器件各层之间的简化能带图如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（b）。其中空穴传输层可以有效传输空穴，同时阻挡电子从ITO电极注入；电子传输层则可以有效地传输电子，阻挡空穴从Ag电极注入。探测器内部各层之间形成能级梯度，保证了空穴和电子可沿各自的传输方向输运，最终被电极收集，实现了对光的探测。从" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（b）中可知ITO电极与CuSCN的电子注入势垒高达3.3 eV，大于ITO电极与PEDOT∶PSS的电子注入势垒（1.8 eV）。由于CuSCN的最低未占据分子轨道（LUMO）能级高于PEDOT∶PSS的LUMO能级，理论上在 p-i-n 型光电探测器中用CuSCN作为空穴传输层，能更有效地阻挡反向偏压下的电子注入，可以降低器件的暗电流。此外，已知CuSCN的空穴迁移率大于10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " ，略高于PEDOT∶PSS的10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "~10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3 " } ] }, { "name": "text", "data": "cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "（a）器件结构示意图；（b）材料能级简化图；（c）HTL为PEDOT∶PSS器件的截面SEM；（d）HTL为CuSCN器件的截面SEM。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "（a）Schematic diagram of device structure. （b）Simplified diagram of material energy level. （c）The cross section SEM images of PEDOT∶PSS device. （d）The cross section SEM images of CuSCN device." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865165&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865167&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865166&type=", "width": "100.90179443", "height": "80.13848877", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "（c）、（d）分别是空穴传输层为PEDOT∶PSS和CuSCN的探测器截面SEM图像。为了尽可能地控制探测器除空穴传输层外受其他因素影响，我们在组装过程中使用的工艺手段相同，以保证探测器内部各层的厚度能够达到基本一致。由图可知，两种探测器的HTL层、Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "吸光层和ZnO电子传输各层厚度基本相似，总厚度约为220 nm。此外，Ag电极通过蒸镀相同时间的银丝以控制电极的厚度一致。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　器件" }, { "name": "italic", "data": [ { "name": "text", "data": "I‐V" } ] }, { "name": "text", "data": "曲线" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，基于PEDOT∶PSS和CuSCN两种空穴传输层的探测器的电流-电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "）特性曲线以对数形式绘出。由图可知，在黑暗条件下和425 nm单色光（光功率密度1 mW·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "）照射下，两种探测器的暗电流和光电流都会随着施加在两端电压（-0.6~0.6 V）线性变化的增大而增大。当探测器的对电极之间偏压为0 V时，两者均有光暗电流产生，且光电流值都在10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6 " } ] }, { "name": "text", "data": "A以上，我们将该现象称为自驱动（自供电），即探测器可以在无偏压下对特定单色光源进行探测" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。一般暗电流越低、开关比越高，说明器件的探测性能越好。在-0.6 V偏压下，基于PEDOT∶PSS空穴传输层探测器的暗电流为3.82×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " A，光电流为4.14×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-5" } ] }, { "name": "text", "data": "，开关比超过10；而基于CuSCN空穴传输层探测器的暗电流为1.32×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-7 " } ] }, { "name": "text", "data": "A，光电流值与前者差异较小，开关比提升了1个数量级，探测性能优于PEDOT∶PSS器件。在无偏压的自供电工作条件下，基于PEDOT∶PSS空穴传输层探测器的暗电流为1.78×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-9 " } ] }, { "name": "text", "data": "A，光电流值为4.45×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6 " } ] }, { "name": "text", "data": "A，开关比超过10" }, { "name": "sup", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "；而基于CuSCN空穴传输层探测器光电流达6.87×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6 " } ] }, { "name": "text", "data": "A，暗电流低至3.52×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-11 " } ] }, { "name": "text", "data": "A，得到了超过10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "的开关比，比基于PEDOT∶PSS空穴传输层探测器提升2个数量级。据此分析，基于CuSCN空穴传输层探测器的暗电流比PEDOT∶PSS空穴传输层探测器要低，归因于CuSCN的 LUMO能级较高，可以有效阻挡电子的注入，从而降低了暗电流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "基于PEDOT∶PSS（a）和CuSCN（b）空穴传输层的探测器在黑暗和425 nm单色光照射条件下的电流-电压（" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃V" } ] }, { "name": "text", "data": "）曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Current" }, { "name": "italic", "data": [ { "name": "text", "data": "⁃" } ] }, { "name": "text", "data": "voltage（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "⁃" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "） curves based on PEDOT∶PSS（a） and CuSCN（b） hole transport layer detectors under dark and 425 nm monochromatic light illumination" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865169&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865173&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865171&type=", "width": "66.14656067", "height": "103.34873962", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　器件" }, { "name": "italic", "data": [ { "name": "text", "data": "I‐t" } ] }, { "name": "text", "data": "曲线" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "为了探究探测器对不同波长光源的响应，我们选取三种具有代表性的单色激发光源，分别为375，425，525 nm。使用光功率密度仪调节光源到探测器的距离，确定光源照射到两探测器的光功率密度为1 mW·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "，有效照射面积为0.04 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，随后进行自供电工作状态下的长时间电流⁃时间（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "⁃" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "）测试。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "为两探测器在不同波长激发光源（开关电源频率为0.5 Hz）照射下的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "⁃" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "曲线。对比发现，两探测器在三种不同波长的光源照射下都有光电流产生，且以 CuSCN 为空穴传输层的光电流值始终比基于PEDOT∶PSS 空穴传输层的器件大。其中在光照辐射波长为425 nm时，CuSCN基探测器和PEDOT∶PSS基探测器的光电流都有一个最大值，分别约为6.7 μA和4.2 μA，直观地体现了自供电下CuSCN 基探测器比PEDOT∶PSS 基探测器的光电流大。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "基于PEDOT∶PSS（a）CuSCN（b）空穴传输层的探测器在不同波长单色光源照射下的电流-时间（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "）曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Current-time（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "） curves based on PEDOT∶PSS（a） and CuSCN（b） hole transport layer detectors under different wavelengths of monochromatic light source illumination." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865177&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865182&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865179&type=", "width": "64.14654541", "height": "99.90661621", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "响应时间被用来衡量光电探测器对光源信号光暗变化的反应能力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "为基于CuSCN和基于PEDOT∶PSS两种空穴传输层（HTL）探测器的单个周期内" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "⁃" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "响应时间曲线。光电探测器的响应时间分为上升时间" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "on" } ] }, { "name": "text", "data": "和下降时间" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "off" } ] }, { "name": "text", "data": "，定义为光电流值在10％～90％之间增加或减少所需的时间。时间越短说明探测器对光信号开关的反应能力速度越出色。从图中可知PEDOT∶PSS基的" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "on" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "off" } ] }, { "name": "text", "data": "分别为0.15 s和0.2 s以内，以CuSCN为HTL探测器的" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "on" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "off" } ] }, { "name": "text", "data": "分别在0.1 s和0.12 s以内。据此分析响应时间的提升是因为CuSCN的载流子迁移率（" }, { "name": "text", "data": ">" }, { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "）略高于PEDOT∶PSS（10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "~10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3 " } ] }, { "name": "text", "data": "cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "），并且与Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "吸光层有更合适的能级匹配，提供了良好的载流子传输通道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图 7" } ], "title": [ { "name": "text", "data": "PEDOT∶PSS/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（a）和CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（b）探测器在单个周期内的归一化电流-时间（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "）曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.7" } ], "title": [ { "name": "text", "data": "Normalized current-time（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "） curves of PEDOT∶PSS/ Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（a） and CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "（b） PDs within a single period" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865185&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865190&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865187&type=", "width": "66.32342529", "height": "102.06567383", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.5　器件响应度" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865197&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865193&type=", "width": "2.28600001", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "text", "data": "和灵敏度" }, { "name": "italic", "data": [ { "name": "text", "data": "D" }, { "name": "sup", "data": [ { "name": "text", "data": "*" } ] } ] } ], "level": "2", "id": "s3e" } }, { "name": "p", "data": [ { "name": "text", "data": "响应度" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865204&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865201&type=", "width": "2.28600001", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "text", "data": "和灵敏度" }, { "name": "italic", "data": [ { "name": "text", "data": "D" }, { "name": "sup", "data": [ { "name": "text", "data": "*" } ] } ] }, { "name": "text", "data": "是衡量探测器性能优劣的重要参数，值越高说明探测能力越强" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示，利用公式" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865214&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865209&type=", "width": "21.08200073", "height": "8.29733276", "fontsize": "" } } } ] }, { "name": "text", "data": "计算出不同空穴传输层的探测器在自供电条件下对三种不同波长（光功率密度为1 mW·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "）光照的响应度。结果表明，两种探测器对三种单色光响应强度由高至低依次是425，375，525 nm，其中基于CuSCN空穴传输层的探测器在425 nm处响应度最佳，其值为157.8 mA·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "ITO/HTL/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag光电探测器的响应度" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Responsivity of ITO/HTL/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag PD" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "HTLs" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "375 nm" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "425 nm" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "525 nm" } ] } ] ], "body": [ [ { "align": "center", "data": [ { "name": "text", "data": "PEDOT∶PSS" } ] }, { "align": "center", "data": [ { "name": "text", "data": "88.7" } ] }, { "align": "center", "data": [ { "name": "text", "data": "122.4" } ] }, { "align": "center", "data": [ { "name": "text", "data": "52.1" } ] } ], [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "CuSCN" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "145.2" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "157.8" } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "text", "data": "96.2" } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865221&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865217&type=", "width": "77.69583893", "height": "12.81944275", "fontsize": "" }, "cellunit": [ { "lang": "en", "data": [ { "name": "text", "data": "mA·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] } ] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "的计算结果和暗电流" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": "的数值，依据公式" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865230&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865226&type=", "width": "23.28333473", "height": "10.49866676", "fontsize": "" } } } ] }, { "name": "text", "data": "可计算得到器件的灵敏度，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "为响应度，单电子电量" }, { "name": "italic", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "=1.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-19" } ] }, { "name": "text", "data": " C，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "dark" } ] }, { "name": "text", "data": "为暗电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "为单个器件的有效面积（0.04 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "）。基于CuSCN空穴传输层的探测器在三种不同光源照射下灵敏度均高于基于PEDOT∶PSS空穴传输层的探测器，其值都超过10" }, { "name": "sup", "data": [ { "name": "text", "data": "10 " } ] }, { "name": "text", "data": "Jones量级。灵敏度" }, { "name": "italic", "data": [ { "name": "text", "data": "D" }, { "name": "sup", "data": [ { "name": "text", "data": "*" } ] } ] }, { "name": "text", "data": "由光响应度" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "和暗电流密度" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "决定，因此基于CuSCN空穴传输层器件灵敏度的提升与空穴传输层CuSCN能显著降低暗电流直接相关。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.6　器件稳定性" } ], "level": "2", "id": "s3f" } }, { "name": "p", "data": [ { "name": "text", "data": "对于一个优异的探测器而言，能够持续地稳定工作尤为重要。优异的探测器一般都能够在长时间光源开关照射下维持稳定的光暗电流变化" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此我们测试了探测器长时间对光源开关的响应，" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "为ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag光电探测器工作1 h内的归一化电流-时间（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "）特性曲线。我们选取了响应度较好的425 nm的单色光源（光功率密度为1 mW·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "–2" } ] }, { "name": "text", "data": "）照射光电探测器，并通过函数发生器设置光源开关频率为0.2 Hz，保持该状态记录1 h内的电流变化。如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示，在0~1 h，光电探测器表现出良好的循环响应，插图（a）和（b）分别为前100 s和后100 s的" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃t" } ] }, { "name": "text", "data": "图像，对比发现光电流值大小没有发生明显的变化，说明该探测器能够对425 nm可见光持续探测，并表现出良好的工作稳定性。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag探测器在0 V偏压下425 nm单色光照射下1 h内的归一化电流-时间（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "）曲线（插图为前100 s（a）和后100 s（b）的" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "曲线）" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.8" } ], "title": [ { "name": "text", "data": "Normalized current-time（" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "） curves of ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag detectors at 0 V bias under 425 nm monochromatic light irradiation for 1 h（Insert：" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": " curves of the first 100 s（a） and for the last 100 s（b））" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865232&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865240&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865236&type=", "width": "71.91424561", "height": "40.05953979", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "随后对ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag光电探测器进行了长期稳定性测试，如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "所示是探测器在室温密闭环境下存储一周前后的开关工作状态。对比一周前后的光暗电流大小，可以发现Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "光电探测器在放置一周后其光电流值可达到初始值98%以上，暗电流也没有明显降低的趋势，表明该器件具有较好的自供电特性和长期稳定性，有利于探测器的实际应用。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag探测器一周前后单个周期内的归一化电流-时间（" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃t" } ] }, { "name": "text", "data": "）曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Normalized current-time（" }, { "name": "italic", "data": [ { "name": "text", "data": "I⁃t" } ] }, { "name": "text", "data": "） curves before and after one week of the ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag detector in a single cycle" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865244&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865249&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35865247&type=", "width": "68.34288025", "height": "53.68161011", "fontsize": "" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结　　论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文通过溶液旋涂制备了PEDOT∶PSS和CuSCN两种薄膜作为空穴传输层，制作了结构为ITO/HTL/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag的p-i-n型光电探测器。利用控制变量法，尽量保证制备流程及测试条件一致，变量仅为空穴传输层材料。对比测试后，发现基于CuSCN空穴传输层的探测器在暗电流、开关比、响应时间和灵敏度等性能参数上均表现更为优异。在0 V偏压下基于CuSCN空穴传输层的探测器暗电流值比PEDOT∶PSS空穴传输层的探测器要低2个数量级，低至3.52×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-11 " } ] }, { "name": "text", "data": "A，开关比超过10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "。当两端外加偏压开始增大，探测器的暗电流变化趋于平缓。因CuSCN最低未占分子轨道能级（-1.5 eV）高于PEDOT∶PSS的最低未占分子轨道能级（-3.0 eV），能够有效阻挡电子注入，所以具有更低的暗电流。而基于CuSCN空穴传输层的器件灵敏度的提升与空穴传输层CuSCN能够显著降低器件暗电流直接相关。此外，基于CuSCN空穴传输层的探测器上升和下降时间分别小于0.1 s和0.12 s，归因于CuSCN的高载流子迁移率加快了电极两端对载流子的收集，因此相对于PEDOT∶PSS空穴传输层的探测器表现出更短的响应时间。对于全无机ITO/CuSCN/Cs" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "Br" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/ZnO/Ag结构的p-i-n型光电探测器，在1 h持续425 nm单色光照射下，能够持续稳定地开关工作而光暗电流值不发生明显衰减。关于探测器的环境稳定性，将其放置一周后光电流值能够保持初始值98%以上，具有优异的长期工作稳定性。上述结论为通过抑制暗电流进一步提高稳定高效的无铅钙钛矿光电探测器性能提供了新的思路。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：" }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220165." } ], "href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/" } } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献" } ], "data": [ { "id": "R1", "label": "1", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ARMIN A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "JANSEN-VAN VUUREN R D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KOPIDAKIS N" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Narrowband light detection " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " internal quantum efficiency manipulation of organic photodiodes" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nat. Commun." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， " }, { "name": "text", "data": "6" }, { "name": "text", "data": "： " }, { "name": "text", "data": "6343-1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "8" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1038/ncomms7343" } ], "href": "http://dx.doi.org/10.1038/ncomms7343" } } ], "title": "Narrowband light detection via internal quantum efficiency manipulation of organic photodiodes" } ] }, { "id": "R2", "label": "2", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BÜCHELE P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "RICHTER M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "TEDDE S F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "X-ray imaging with scintillator-sensitized hybrid organic photodetectors" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nat. Photonics" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， " }, { "name": "text", "data": "9" }, { "name": "text", "data": "（" }, { "name": "text", "data": "12" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "843" }, { "name": "text", "data": "-" }, { "name": "text", "data": "848" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1038/nphoton.2015.216" } ], "href": "http://dx.doi.org/10.1038/nphoton.2015.216" } } ], "title": "X-ray imaging with scintillator-sensitized hybrid organic photodetectors" } ] }, { "id": "R3", "label": "3", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LI C L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LU J R" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHAO Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly sensitive， fast response perovskite photodetectors demonstrated in weak light　 detection circuit and visible light communication system" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Small" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "， " }, { "name": "text", "data": "15" }, { "name": "text", "data": "（" }, { "name": "text", "data": "44" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1903599-1-10" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/smll.201903599" } ], "href": "http://dx.doi.org/10.1002/smll.201903599" } } ], "title": "Highly sensitive， fast response perovskite photodetectors demonstrated in weak light　 detection circuit and visible light communication system" } ] }, { "id": "R4", "label": "4", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SHEN L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "FANG Y J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "WANG D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "A self-powered， sub-nanosecond-response solution-processed hybrid perovskite photodetector for time-resolved photoluminescence-lifetime detection" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2016" }, { "name": "text", "data": "， " }, { "name": "text", "data": "28" }, { "name": "text", "data": "（" }, { "name": "text", "data": "48" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "10794" }, { "name": "text", "data": "-" }, { "name": "text", "data": "10800" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/adma.201603573" } ], "href": "http://dx.doi.org/10.1002/adma.201603573" } } ], "title": "A self-powered， sub-nanosecond-response solution-processed hybrid perovskite photodetector for time-resolved photoluminescence-lifetime detection" } ] }, { "id": "R5", "label": "5", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BUZHAN P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "DOLGOSHEIN B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ILYIN A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "An advanced study of silicon photomultiplier" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Technol." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， 21， " }, { "name": "text", "data": "54" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "32" }, { "name": "text", "data": "-" }, { "name": "text", "data": "35" }, { "name": "text", "data": "." } ], "title": "An advanced study of silicon photomultiplier" } ] }, { "id": "R6", "label": "6", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "魏瑶琪" }, { "name": "text", "data": "， " }, { "name": "text", "data": "全家乐" }, { "name": "text", "data": "， " }, { "name": "text", "data": "赵庆强" }, { "name": "text", "data": "， " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "一种基于n-ZnS/p-CuSCN纳米薄膜的具有高开关比和稳定性的紫外光电探测器" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "43" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "） ：" }, { "name": "text", "data": "911" }, { "name": "text", "data": "-" }, { "name": "text", "data": "921" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.37188/cjl.20220069" } ], "href": "http://dx.doi.org/10.37188/cjl.20220069" } } ], "title": "一种基于n-ZnS/p-CuSCN纳米薄膜的具有高开关比和稳定性的紫外光电探测器" }, { "lang": "en", "text": [ { "name": "text", "data": "WEI Y Q" }, { "name": "text", "data": "， " }, { "name": "text", "data": "QUAN J L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHAO Q Q" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "A stable UV photodetector based on n-ZnS/p-CuSCN nanofilm with a high on/off ratio" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "43" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "） ：" }, { "name": "text", "data": "911" }, { "name": "text", "data": "-" }, { "name": "text", "data": "921" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in English）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.37188/cjl.20220069" } ], "href": "http://dx.doi.org/10.37188/cjl.20220069" } } ], "title": "A stable UV photodetector based on n-ZnS/p-CuSCN nanofilm with a high on/off ratio" } ] }, { "id": "R7", "label": "7", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "STRELTSOV A M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MOLL K D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "GAETA A L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Pulse autocorrelation measurements based on two- and three-photon conductivity in a GaN photodiode" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Appl. Phys. Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "1999" }, { "name": "text", "data": "， " }, { "name": "text", "data": "75" }, { "name": "text", "data": "（" }, { "name": "text", "data": "24" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "3778" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3780" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1063/1.125453" } ], "href": "http://dx.doi.org/10.1063/1.125453" } } ], "title": "Pulse autocorrelation measurements based on two- and three-photon conductivity in a GaN photodiode" } ] }, { "id": "R8", "label": "8", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YOU D T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "XU C X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHAO J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Single-crystal ZnO/AlN core/shell nanowires for ultraviolet emission and dual-color ultraviolet photodetection" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Opt. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "， " }, { "name": "text", "data": "7" }, { "name": "text", "data": "： " }, { "name": "text", "data": "1801522-1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "8" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/adom.201801522" } ], "href": "http://dx.doi.org/10.1002/adom.201801522" } } ], "title": "Single-crystal ZnO/AlN core/shell nanowires for ultraviolet emission and dual-color ultraviolet photodetection" } ] }, { "id": "R9", "label": "9", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "GU L L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHANG Q P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nat. Commun." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2014" }, { "name": "text", "data": "， " }, { "name": "text", "data": "5" }, { "name": "text", "data": "： " }, { "name": "text", "data": "4007-1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "9" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1038/ncomms5007" } ], "href": "http://dx.doi.org/10.1038/ncomms5007" } } ], "title": "All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity" } ] }, { "id": "R10", "label": "10", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG D Z" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIU C Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YIN B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Organics filled one-dimensional TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " nanowires array ultraviolet detector with enhanced photo-conductivity and dark-resistivity" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nanoscale" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2017" }, { "name": "text", "data": "， " }, { "name": "text", "data": "9" }, { "name": "text", "data": "（" }, { "name": "text", "data": "26" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "9095" }, { "name": "text", "data": "-" }, { "name": "text", "data": "9103" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1039/c7nr03408c" } ], "href": "http://dx.doi.org/10.1039/c7nr03408c" } } ], "title": "Organics filled one-dimensional TiO2 nanowires array ultraviolet detector with enhanced photo-conductivity and dark-resistivity" } ] }, { "id": "R11", "label": "11", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HE Z Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIU Q" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HOU H L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Tailored electrospinning of WO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " nanobelts as efficient ultraviolet photodetectors with photo-dark current ratios up to 1 000" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "ACS Appl. Mater. Interfaces" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， " }, { "name": "text", "data": "7" }, { "name": "text", "data": "（" }, { "name": "text", "data": "20" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "10878" }, { "name": "text", "data": "-" }, { "name": "text", "data": "10885" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/acsami.5b02020" } ], "href": "http://dx.doi.org/10.1021/acsami.5b02020" } } ], "title": "Tailored electrospinning of WO3 nanobelts as efficient ultraviolet photodetectors with photo-dark current ratios up to 1 000" } ] }, { "id": "R12", "label": "12", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LI D B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "JIANG K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SUN X J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "AlGaN photonics： recent advances in materials and ultraviolet devices" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Opt. Photonics" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "10" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "43" }, { "name": "text", "data": "-" }, { "name": "text", "data": "110" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1364/aop.10.000043" } ], "href": "http://dx.doi.org/10.1364/aop.10.000043" } } ], "title": "AlGaN photonics： recent advances in materials and ultraviolet devices" } ] }, { "id": "R13", "label": "13", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LANY S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZUNGER A" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Anion vacancies as a source of persistent photoconductivity in Ⅱ-Ⅵ and chalcopyrite semiconductors" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Phys. Rev." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2005" }, { "name": "text", "data": "， " }, { "name": "text", "data": "72" }, { "name": "text", "data": "（" }, { "name": "text", "data": "3" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "035215-1-13" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1103/physrevb.72.035215" } ], "href": "http://dx.doi.org/10.1103/physrevb.72.035215" } } ], "title": "Anion vacancies as a source of persistent photoconductivity in Ⅱ-Ⅵ and chalcopyrite semiconductors" } ] }, { "id": "R14", "label": "14", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "NOH J H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "IM S H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "HEO J H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Chemical management for colorful， efficient， and stable inorganic-organic hybrid nanostructured solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nano Lett." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2013" }, { "name": "text", "data": "， " }, { "name": "text", "data": "13" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1764" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1769" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/nl400349b" } ], "href": "http://dx.doi.org/10.1021/nl400349b" } } ], "title": "Chemical management for colorful， efficient， and stable inorganic-organic hybrid nanostructured solar cells" } ] }, { "id": "R15", "label": "15", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "JIANG Q" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHAO Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHANG X W" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Surface passivation of perovskite film for efficient solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nat. Photonics" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "， " }, { "name": "text", "data": "13" }, { "name": "text", "data": "（" }, { "name": "text", "data": "7" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "460" }, { "name": "text", "data": "-" }, { "name": "text", "data": "466" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1038/s41566-019-0398-2" } ], "href": "http://dx.doi.org/10.1038/s41566-019-0398-2" } } ], "title": "Surface passivation of perovskite film for efficient solar cells" } ] }, { "id": "R16", "label": "16", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HAN B N" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CAI B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SHAN Q S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Stable， efficient red perovskite light-emitting diodes by （α， δ）-CsPbI" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " phase engineering" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Funct. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "28" }, { "name": "text", "data": "（" }, { "name": "text", "data": "47" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1804285-1-8" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/adfm.201804285" } ], "href": "http://dx.doi.org/10.1002/adfm.201804285" } } ], "title": "Stable， efficient red perovskite light-emitting diodes by （α， δ）-CsPbI3 phase engineering" } ] }, { "id": "R17", "label": "17", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BAO C X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YANG J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "BAI S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High performance and stable all-inorganic metal halide perovskite-based photodetectors for optical communication applications" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "30" }, { "name": "text", "data": "（" }, { "name": "text", "data": "38" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1803422-1-8" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/adma.201803422" } ], "href": "http://dx.doi.org/10.1002/adma.201803422" } } ], "title": "High performance and stable all-inorganic metal halide perovskite-based photodetectors for optical communication applications" } ] }, { "id": "R18", "label": "18", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "赵雪帆" }, { "name": "text", "data": "， " }, { "name": "text", "data": "朱云飞" }, { "name": "text", "data": "， " }, { "name": "text", "data": "孟凡斌" }, { "name": "text", "data": "， " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "非铅钙钛矿光伏材料与器件研究进展" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "，" }, { "name": "text", "data": "43" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "817" }, { "name": "text", "data": "-" }, { "name": "text", "data": "832" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.37188/CJL.20220050" } ], "href": "http://dx.doi.org/10.37188/CJL.20220050" } } ], "title": "非铅钙钛矿光伏材料与器件研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHAO X F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHU Y F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MENG F B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Progress of lead-free perovskite photovoltaic materials and devices" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. J. Lumin." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "，" }, { "name": "text", "data": "43" }, { "name": "text", "data": "（" }, { "name": "text", "data": "6" }, { "name": "text", "data": "）：" }, { "name": "text", "data": "817" }, { "name": "text", "data": "-" }, { "name": "text", "data": "832" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.37188/CJL.20220050" } ], "href": "http://dx.doi.org/10.37188/CJL.20220050" } } ], "title": "Progress of lead-free perovskite photovoltaic materials and devices" } ] }, { "id": "R19", "label": "19", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YU B B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIAO M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Self-powered and broadband lead-free inorganic perovskite photodetector with high stability" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "ACS Appl. Mater. Interfaces" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "12" }, { "name": "text", "data": "（" }, { "name": "text", "data": "27" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "30530" }, { "name": "text", "data": "-" }, { "name": "text", "data": "30537" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/acsami.0c05636" } ], "href": "http://dx.doi.org/10.1021/acsami.0c05636" } } ], "title": "Self-powered and broadband lead-free inorganic perovskite photodetector with high stability" } ] }, { "id": "R20", "label": "20", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "霍婷婷" }, { "name": "text", "data": "， " }, { "name": "text", "data": "张冬冬" }, { "name": "text", "data": "， " }, { "name": "text", "data": "施祥蕾" }, { "name": "text", "data": "， " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "基于碳纳米薄膜/砷化镓范德华异质结的高性能自驱动光电探测器研究" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "中国光学" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "15" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "373" }, { "name": "text", "data": "-" }, { "name": "text", "data": "386" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.37188/CO.2021-0149" } ], "href": "http://dx.doi.org/10.37188/CO.2021-0149" } } ], "title": "基于碳纳米薄膜/砷化镓范德华异质结的高性能自驱动光电探测器研究" }, { "lang": "en", "text": [ { "name": "text", "data": "HUO T T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHANG D D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SHI X L" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-performance self-powered photodetectors based on the carbon nanomaterial/GaAs vdW heterojunctions" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Chin. Opt." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2022" }, { "name": "text", "data": "， " }, { "name": "text", "data": "15" }, { "name": "text", "data": "（" }, { "name": "text", "data": "2" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "373" }, { "name": "text", "data": "-" }, { "name": "text", "data": "386" }, { "name": "text", "data": ". " }, { "name": "text", "data": "（in Chinese）" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.37188/CO.2021-0149" } ], "href": "http://dx.doi.org/10.37188/CO.2021-0149" } } ], "title": "High-performance self-powered photodetectors based on the carbon nanomaterial/GaAs vdW heterojunctions" } ] }, { "id": "R21", "label": "21", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHIN X Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CORTECCHIA D" }, { "name": "text", "data": "， " }, { "name": "text", "data": "YIN J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Lead iodide perovskite light-emitting field-effect transistor" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nat. Commun." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2015" }, { "name": "text", "data": "， " }, { "name": "text", "data": "6" }, { "name": "text", "data": "： " }, { "name": "text", "data": "7383-1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "9" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1038/ncomms8383" } ], "href": "http://dx.doi.org/10.1038/ncomms8383" } } ], "title": "Lead iodide perovskite light-emitting field-effect transistor" } ] }, { "id": "R22", "label": "22", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "NIU T Q" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHU W Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ZHANG Y H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "D-A-π-A-D-type dopant-free hole transport material for low-cost， efficient， and stable perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Joule" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2021" }, { "name": "text", "data": "， " }, { "name": "text", "data": "5" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "249" }, { "name": "text", "data": "-" }, { "name": "text", "data": "269" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1016/j.joule.2020.12.003" } ], "href": "http://dx.doi.org/10.1016/j.joule.2020.12.003" } } ], "title": "D-A-π-A-D-type dopant-free hole transport material for low-cost， efficient， and stable perovskite solar cells" } ] }, { "id": "R23", "label": "23", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "STEELE J A" }, { "name": "text", "data": "， " }, { "name": "text", "data": "PUECH P" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KESHAVARZ M" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Giant electron-phonon coupling and deep conduction band resonance in metal halide double perovskite" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "ACS Nano" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "12" }, { "name": "text", "data": "（" }, { "name": "text", "data": "8" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "8081" }, { "name": "text", "data": "-" }, { "name": "text", "data": "8090" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/acsnano.8b02936" } ], "href": "http://dx.doi.org/10.1021/acsnano.8b02936" } } ], "title": "Giant electron-phonon coupling and deep conduction band resonance in metal halide double perovskite" } ] }, { "id": "R24", "label": "24", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "JEON N J" }, { "name": "text", "data": "， " }, { "name": "text", "data": "NOH J H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "KIM Y C" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Solvent engineering for high-performance inorganic-organic hybrid perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Nat. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2014" }, { "name": "text", "data": "， " }, { "name": "text", "data": "13" }, { "name": "text", "data": "（" }, { "name": "text", "data": "9" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "897" }, { "name": "text", "data": "-" }, { "name": "text", "data": "903" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1038/nmat4014" } ], "href": "http://dx.doi.org/10.1038/nmat4014" } } ], "title": "Solvent engineering for high-performance inorganic-organic hybrid perovskite solar cells" } ] }, { "id": "R25", "label": "25", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HAWASH Z" }, { "name": "text", "data": "， " }, { "name": "text", "data": "ONO L K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "QI Y B" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Recent advances in Spiro-MeOTAD hole transport material and its applications in organic-inorganic halide perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Mater. Interfaces" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "5" }, { "name": "text", "data": "（" }, { "name": "text", "data": "1" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1700623-1-22" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/admi.201700623" } ], "href": "http://dx.doi.org/10.1002/admi.201700623" } } ], "title": "Recent advances in Spiro-MeOTAD hole transport material and its applications in organic-inorganic halide perovskite solar cells" } ] }, { "id": "R26", "label": "26", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MATEBESE F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "TAZIWA R" }, { "name": "text", "data": "， " }, { "name": "text", "data": "MUTUKWA D" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Progress on the synthesis and application of CuSCN inorganic hole transport material in perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Materials" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "11" }, { "name": "text", "data": "（" }, { "name": "text", "data": "12" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2592-1-19" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.3390/ma11122592" } ], "href": "http://dx.doi.org/10.3390/ma11122592" } } ], "title": "Progress on the synthesis and application of CuSCN inorganic hole transport material in perovskite solar cells" } ] }, { "id": "R27", "label": "27", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SHEN K" }, { "name": "text", "data": "， " }, { "name": "text", "data": "XU H" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LI X" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Flexible and self-powered photodetector arrays based on all-inorganic CsPbBr" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " quantum dots" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2020" }, { "name": "text", "data": "， " }, { "name": "text", "data": "32" }, { "name": "text", "data": "（" }, { "name": "text", "data": "22" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "2000004-1-10" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/adma.202000004" } ], "href": "http://dx.doi.org/10.1002/adma.202000004" } } ], "title": "Flexible and self-powered photodetector arrays based on all-inorganic CsPbBr3 quantum dots" } ] }, { "id": "R28", "label": "28", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MA S" }, { "name": "text", "data": "， " }, { "name": "text", "data": "QIAO W Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CHENG T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optical-electrical-chemical engineering of PEDOT∶PSS by incorporation of hydrophobic nafion for efficient and stable perovskite solar cells" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "ACS Appl. Mater. Interfaces" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2018" }, { "name": "text", "data": "， " }, { "name": "text", "data": "10" }, { "name": "text", "data": "（" }, { "name": "text", "data": "4" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "3902" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3911" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1021/acsami.7b19053" } ], "href": "http://dx.doi.org/10.1021/acsami.7b19053" } } ], "title": "Optical-electrical-chemical engineering of PEDOT∶PSS by incorporation of hydrophobic nafion for efficient and stable perovskite solar cells" } ] }, { "id": "R29", "label": "29", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "XUE Q F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "CHEN G T" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LIU M Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Improving film formation and photovoltage of highly efficient inverted-type perovskite solar cells through the incorporation of new polymeric hole selective layers" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Energy Mater." }, { "name": "text", "data": "， " }, { "name": "text", "data": "2016" }, { "name": "text", "data": "， " }, { "name": "text", "data": "6" }, { "name": "text", "data": "（" }, { "name": "text", "data": "5" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1502021-1-9" }, { "name": "text", "data": ". " }, { "name": "text", "data": " doi: " }, { "name": "extlink", "data": { "text": [ { "name": "text", "data": "10.1002/aenm.201502021" } ], "href": "http://dx.doi.org/10.1002/aenm.201502021" } } ], "title": "Improving film formation and photovoltage of highly efficient inverted-type perovskite solar cells through the incorporation of new polymeric hole selective layers" } ] }, { "id": "R30", "label": "30", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LI Y" }, { "name": "text", "data": "， " }, { "name": "text", "data": "SHI Z F" }, { "name": "text", "data": "， " }, { "name": "text", "data": "LEI L Z" }, { "name": "text", "data": "， " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Photodetectors： ultrastable lead-free double perovskite photodetectors with imaging capability" }, { "name": "text", "data": " ［J］. " }, { "name": "text", "data": "Adv. Mater. Interfaces" }, { "name": "text", "data": "， " }, { "name": "text", "data": "2019" }, { "name": "text", "data": "， " }, { "name": "text", "data": "6" }, { "name": "text", "data": "（" }, { "name": "text", "data": "10" }, { "name": "text", "data": "）： " }, { "name": "text", "data": "1970061" }, { "name": "text", "data": ". 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