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Ag纳米线增强硒微米管/聚噻吩自驱动光电探测器性能
器件制备及器件物理 | 更新时间：2022-10-19
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Ag纳米线增强硒微米管/聚噻吩自驱动光电探测器性能 增强出版
- Ag Nanowires Enhance Performance of Self-powered Photodetector Based on Selenium Microtube/Polythiophene
- 发光学报 2022年 43卷 第8期 (2022)
- 作者机构：江南大学 物联网工程学院,江苏,无锡,214122
- 作者简介：
- 基金信息：国家自然科学基金(51802124);中国博士后科学基金(2019M651693)
- DOI：10.37188/CJL.20220078 中图分类号： O482.31;TN304
纸质出版日期：2022-08-05，
收稿日期：2022-03-09，
修回日期：2022-03-29，
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引用本文
陈荣鹏,冯仕亮,郑天旭等.Ag纳米线增强硒微米管/聚噻吩自驱动光电探测器性能[J].发光学报,2022,43(08):1273-1280.
CHEN Rong-peng,FENG Shi-liang,ZHENG Tian-xu,et al.Ag Nanowires Enhance Performance of Self-powered Photodetector Based on Selenium Microtube/Polythiophene[J].Chinese Journal of Luminescence,2022,43(08):1273-1280.
陈荣鹏,冯仕亮,郑天旭等.Ag纳米线增强硒微米管/聚噻吩自驱动光电探测器性能[J].发光学报,2022,43(08):1273-1280. DOI： 10.37188/CJL.20220078.
CHEN Rong-peng,FENG Shi-liang,ZHENG Tian-xu,et al.Ag Nanowires Enhance Performance of Self-powered Photodetector Based on Selenium Microtube/Polythiophene[J].Chinese Journal of Luminescence,2022,43(08):1273-1280. DOI： 10.37188/CJL.20220078.
Ag纳米线增强硒微米管/聚噻吩自驱动光电探测器性能 增强出版
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"data": "。传统的光电探测器依靠外部偏置电压来分离器件内部的光生电子和空穴，对于电源的依赖使其在狭小位置的应用受限"
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"data": "。利用p-n结、异质结、肖特基结等结构建立内置电场来驱动光生电子和空穴的分离，构筑自驱动光电探测器可以做到在0 V下检测光信号"
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{
"name": "text",
"data": "。但是目前大多数的自驱动光电探测器为无机-无机型，复杂的加工条件和高昂的生产成本限制了其大规模应用"
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"data": "，因此，有必要找到一种简便而又低成本的方法制备高性能自驱动光电探测器。"
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"data": [
{
"name": "text",
"data": "硒（Se）作为一种p型无机半导体材料，带隙约为1.77 eV，熔点为217 ℃，能够在较低的温度下通过蒸发沉积的方式制备微纳米结构，具有低成本、高结晶性能、高响应速率等优点"
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"data": [
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"text": "11",
"type": "bibr",
"rid": "R11",
"data": [
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"data": "11"
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{
"name": "text",
"data": "。Se基微纳米结构光电探测器的响应速度级别为毫秒级，胡凯等通过气相沉积法制备了Se微米管并构建光电探测器，器件的上升和下降时间分别为0.32 ms和23.02 ms"
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"data": [
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"data": "["
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"type": "bibr",
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"data": [
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"data": "。Sun等采用气相沉积法制备了p-Se/Al"
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"name": "text",
"data": "3"
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},
{
"name": "text",
"data": "/n-ZnO纳米棒阵列异质结光电探测器，器件的上升和下降时间分别为0.9 ms和0.3 ms"
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"type": "bibr",
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"data": [
{
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"data": "13"
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}
},
{
"name": "text",
"data": "]"
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]
},
{
"name": "text",
"data": "。陈洪宇等制备了基于一维p型Se微米线与二维lnSe纳米片的范德瓦尔斯异质结型广光谱探测器，该器件在-5 V偏压下对460 nm光源的响应度可以达到108 mA/W，比纯Se探测器提高了800%"
},
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"type": "bibr",
"rid": "R14",
"data": [
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"data": "14"
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{
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"data": "]"
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},
{
"name": "text",
"data": "。但是，Se基微纳米结构光电探测器存在响应度不高等问题，因此需要结合有机半导体质轻、机械柔韧性高和光谱可调节等优点制备有机-无机自驱动光电探测器来解决上述问题。聚乙烯二氧噻吩（PEDOT）作为一种p型有机半导体材料，具有导电率高、成本低和稳定性好等优点，经常被用来修饰ZnO、TiO"
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"data": [
{
"name": "text",
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{
"name": "text",
"data": "和ZnS等无机半导体材料"
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"data": [
{
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"data": "["
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"type": "bibr",
"rid": "R15",
"data": [
{
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"data": "15"
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"text": "15-16",
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{
"name": "text",
"data": "，在光电探测器上有着广泛的应用。最近，方晓生课题组报道了采用原位聚合法构建的Se/PANI、Se/PPy和Se/PEDOT异质结型光电探测器，器件在0 V偏置电压下的响应度分别为120，70，5.5 mA/W"
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"data": [
{
"name": "text",
"data": "17"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，可见Se/PEODT光电探测器的响应度较低，这是因为传统平直型光电探测器共振模式单一，对于入射光的吸收能力较弱。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "针对这一问题，可以通过在光电探测器中引入局域表面等离子体共振（LSPR）效应"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "18",
"type": "bibr",
"rid": "R18",
"data": [
{
"name": "text",
"data": "18"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "来增强器件对于入射光的吸收能力，增大器件表面的局部电场，使器件产生更多的光生电子和空穴。银、金和铝等贵金属均可以引起LSPR效应，但由于能带间的电子跃迁行为以及自由载流子在输运过程中发生的各种散射现象，金属将会产生部分耗损，在可见光范围内，金属银的耗损最小"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "19",
"type": "bibr",
"rid": "R19",
"data": [
{
"name": "text",
"data": "19"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。金属银纳米结构的电子云振荡频率与可见光的频率相匹配，满足LSPR效应所需要的入射光的频率和金属纳米结构整体振动的频率一致的要求。李露颖等报道了在可见光范围内采用银纳米颗粒修饰二硫化钼（MoS"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "）并构成光电探测器，响应度提升了470%达到2.97×10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": " A/W"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "20",
"type": "bibr",
"rid": "R20",
"data": [
{
"name": "text",
"data": "20"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。证明了在可见光范围内通过使用银纳米结构来修饰光电器件，可以有效地提升器件的光电特性。Se/PEODT光电探测器的工作范围为300~700 nm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "17",
"type": "bibr",
"rid": "R17",
"data": [
{
"name": "text",
"data": "17"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，满足上述使用金属银纳米结构激发LSPR的条件，因此可以借助LSPR效应来进一步提升Se/PEODT光电探测器的响应度。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "基于此，本文采用化学气相沉积法制备了高结晶的Se微米管（Se-MT），并且通过旋涂法制备了Se-MT/PEDOT异质结，同时在异质结表面修饰银纳米线（Ag-NW）来激发LSPR效应，分别得到了Se-MT/PEDOT、Se-MT/PEDOT/Ag-NW光电探测器，具有350~700 nm的宽光谱检测范围以及自驱动能力。这为有机-无机自驱动光电探测器的进一步研制和开发提供了重要的实验依据和材料基础。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2 实 验"
}
],
"level": "1",
"id": "s2"
}
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.1 样品制备"
}
],
"level": "2",
"id": "s2a"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "Se-MT由化学气相沉积法制备。取适量Se粉（99.999%）放置在石英舟中，将石英舟放置在水平管式炉的中心温区。将经过丙酮、乙醇、去离子水预处理并清洗吹干后的Si/SiO"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "片（2 cm×1 cm）放置在距石英舟右侧20 cm处。先向水平管式炉中通入500 mL/min高纯氮气20 min来排尽炉中的空气，之后将气体流速改至200 mL/min进行Se-MT的生长。生长温度为300 ℃，生长时间为5 h，沉积完毕之后冷却至室温，即可在Si/SiO"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "片得到Se-MT。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "Ag-NW利用多元醇还原法制备。将硝酸银（0.2 mol/L）和聚乙烯吡咯烷酮（0.5 mol/L）依次加入10 mL乙二醇溶液中，磁力搅拌15 min后将溶液转移至50 mL水热反应釜中，加热至200 ℃，反应时间为2 h。将所得产物用去离子水和乙醇离心洗涤数次，去除上层溶液后，将底部产物重新溶于乙醇备用。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "Se-MT/PEDOT异质结通过旋涂法制备。在玻璃上选取单个Se-MT使用铟固定一侧并用3M胶带覆盖，之后将PEODT溶液滴在Se-MT的另一侧以2 000 r/min的速率旋涂2 min，随后放入温度为60 ℃的烘箱内处理5 min即可得到Se-MT/PEDOT异质结。胶带覆盖部分Se-MT/PEDOT，采用旋涂法加入Ag-NW溶液，旋涂速率为1 500 r/min，旋涂时间为2 min，60 ℃下烘烤10 min即可得到Se-MT/PEDOT/Ag-NW异质结。最后，去除3M胶带并采用铟分别固定Se-MT/PEDOT和Se-MT/PEDOT/Ag-NW端制备光电探测器。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2.2 样品表征"
}
],
"level": "2",
"id": "s2b"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "样品的形貌和结构由扫描电子显微镜（SEM, Zeiss s-4800）、X射线衍射仪（XRD, Bruker D8-A25）和拉曼光谱仪（LabRam-1B, 632.8 nm）表征。器件的光电性能和光谱响应特性由基于氙灯、单色仪、斩波器、锁相放大器、Keithley 4200半导体的测试系统表征。"
}
]
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "3 结果与讨论"
}
],
"level": "1",
"id": "s3"
}
},
{
"name": "p",
"data": [
{
"name": "xref",
"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
{
"name": "text",
"data": "图1"
}
]
}
},
{
"name": "text",
"data": "（a）是利用化学气相沉积法生成的Se-MT的扫描电子显微镜（SEM）图，可见表面光滑的六方Se-MT，Se-MT的宽度大约4 μm，长度可达数十至数百微米，从"
},
{
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"data": [
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"data": "图1"
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},
{
"name": "text",
"data": "（a）插图可见Se-MT为空心结构。旋涂PEDOT后的Se-MT/PEDOT异质结如"
},
{
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"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
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"data": "图1"
}
]
}
},
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"name": "text",
"data": "（b）所示，可见在Se-MT表面覆盖了一层PEDOT颗粒。将直径30 nm和长度大于10 μm的纯Ag-NW（"
},
{
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"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
{
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"data": "图1"
}
]
}
},
{
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"data": "（c））修饰在Se-MT/PEDOT异质结表面得到Se-MT/PEDOT/Ag-NW异质结，如"
},
{
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"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
{
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"data": "图1"
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]
}
},
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"name": "text",
"data": "（d）所示，从"
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"text": "图1",
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"rid": "F1",
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{
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"data": "图1"
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"data": "（d）插图可见Ag-NW的厚度约为50 nm。"
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"caption": [
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"data": "Se-MT（a）、Se-MT/PEDOT（b）、Ag-NW（c）和Se-MT/PEDOT/Ag-NW（d）的SEM图。插图是Se-MT/PEDOT/Ag-NW的截面图。"
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"data": "SEM images of Se-MT（a）， Se-MT/PEDOT（b）， Ag-NW（c） and Se-MT/PEDOT/Ag-NW（d）. Inset is the cross-section image of Se-MT/PEDOT/Ag-NW."
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"data": "是Ag-NW、Se-MT、Se-MT/PEDOT、Se-MT/PEDOT/Ag-NW的紫外-可见吸收光谱。Se-MT在700 nm处吸收下降，对应禁带带隙为1.77 eV，加入PEDOT后增强了异质结在650~750 nm处的光吸收。Se-MT/PEDOT/Ag-NW在353 nm和378 nm处的吸收增强，分别对应Ag-NW的纵向等离子体共振和横向等离子体共振，在600~750 nm处的吸收增强，导致Se-MT的截止边不够明显，说明Ag-NW的加入可以增强异质结的光吸收，产生较多的光生载流子。"
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"title": [
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"data": "UV-Vis absorption spectroscopy of Ag-NW， Se-MT， Se-MT/PEDOT and Se-MT/PEDOT/Ag-NW."
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"data": "（a）是Se-MT、Se-MT/PEDOT、Se-MT/PEDOT/Ag-NW的XRD图。从图中可以看出Se-MT衍射峰一一对应JCPDS标准卡片库中的No.65-1876的峰位（晶格参数为"
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"data": "c"
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]
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"data": "=0.495 9 nm），证明得到的产物为t-Se"
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"data": [
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"name": "text",
"data": "["
},
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"data": {
"text": "21",
"type": "bibr",
"rid": "R21",
"data": [
{
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"data": "21"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。相比于Se-MT，Se-MT/PEDOT复合材料由于PEDOT材料包裹导致（110）、（102）面的结晶性下降，从而衍射峰不明显。从Se-MT/PEDOT/Ag-NW的XRD图谱中可以看到（111）面和（200）面的衍射峰（晶格参数为"
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"data": "=3.81 nm和"
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"data": "b"
}
]
},
{
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"data": "=4.43 nm），这与JCPDS标准卡片库中的No.04-0783的结果吻合，因此可以证明Ag-NW的存在"
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"data": [
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"data": "["
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"data": {
"text": "22",
"type": "bibr",
"rid": "R22",
"data": [
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"data": "22"
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]
}
},
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"data": "]"
}
]
},
{
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"data": "。"
},
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"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
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"data": "（b）是Se-MT、Se-MT/PEDOT、Se-MT/PEDOT/Ag-NW的拉曼图谱。在Se-MT/PEDOT的拉曼图谱中可见236.6 cm"
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"data": "-1"
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]
},
{
"name": "text",
"data": "处属于Se的特征峰"
},
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"data": [
{
"name": "text",
"data": "["
},
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"name": "xref",
"data": {
"text": "23",
"type": "bibr",
"rid": "R23",
"data": [
{
"name": "text",
"data": "23"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，1 438 cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "和1 510 cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "处属于PEDOT的共振峰"
},
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"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "24",
"type": "bibr",
"rid": "R24",
"data": [
{
"name": "text",
"data": "24"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，证明Se-MT/PEDOT异质结制备成功。Se-MT/PEDOT/Ag-NW在800，1 100，1 438 cm"
},
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"data": [
{
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"data": "-1"
}
]
},
{
"name": "text",
"data": "的拉曼峰强度增强，这是由于Ag-NW的引入使得表面电磁场增强，进而增强了拉曼散射效应，导致拉曼信号增大"
},
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"name": "sup",
"data": [
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"name": "text",
"data": "["
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"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
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"data": "25"
}
]
}
},
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"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，表明Se-MT/PEDOT/Ag-NW异质结制备成功。"
}
]
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"caption": [
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"lang": "zh",
"label": [
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"name": "text",
"data": "图3"
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"title": [
{
"name": "text",
"data": "Se-MT、Se-MT/PEDOT和Se-MT/PEDOT/Ag-NW的XRD图（a）和拉曼图谱（b）。"
}
]
},
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"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.3"
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],
"title": [
{
"name": "text",
"data": "XRD patterns（a） and Raman spectra（b） of Se-MT，Se-MT/PEDOT and Se-MT/PEDOT/Ag-NW."
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]
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"data": "为了研究器件的光电性能，使用金属铟作为电极（如"
},
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"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "（a）所示），制备了Se-MT/PEDOT和Se-MT/PEDOT/Ag-NW光电探测器，器件示意图如"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "（b）~（c）中的插图所示，并对器件进行了"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I‐V"
}
]
},
{
"name": "text",
"data": "特性测试。从"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "（b）可见，Se-MT/PEDOT在暗态和波长368 nm（0.505 mW/cm"
},
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"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "）、500 nm（0.668 mW/cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "）、600 nm（0.546 mW/cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "）光照射下，光电流发生明显变化，其中500 nm光照下器件的开路电压约为0.4 V。"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "（c）是Se-MT/PEDOT/Ag-NW的 "
},
{
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"data": [
{
"name": "text",
"data": "I‐V"
}
]
},
{
"name": "text",
"data": "特性曲线，可见加入Ag-NW后器件在500 nm光照射下的开路电压增大至0.6 V，整流效果明显提升。"
}
]
},
{
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"id": "F4",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图4"
}
],
"title": [
{
"name": "text",
"data": "（a）器件制备流程图；Se-MT/PEDOT（b）和Se-MT/PEDOT/Ag-NW（c）器件在暗条件及368，500，600 nm光照下的"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
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{
"name": "text",
"data": "-"
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"name": "italic",
"data": [
{
"name": "text",
"data": "V"
}
]
},
{
"name": "text",
"data": "特性曲线，插图为器件示意图。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.4"
}
],
"title": [
{
"name": "text",
"data": "（a）Device fabrication flowchart. "
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "-"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "V"
}
]
},
{
"name": "text",
"data": " characteristics of Se-MT/PEDOT（b） and Se-MT/PEDOT/Ag-NW（c） photodetectors under dark and different light illumination. Insert is the illustration of the device."
}
]
}
],
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"data": "为了验证器件在不同波长光照下的光电流变化情况，对器件进行了"
},
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{
"name": "text",
"data": "-"
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"name": "italic",
"data": [
{
"name": "text",
"data": "t"
}
]
},
{
"name": "text",
"data": "特性测试。在0 V偏置电压下对Se-MT/PEDOT和Se-MT/PEDOT/Ag-NW器件使用波长为368，500，600 nm的光进行照射。从"
},
{
"name": "xref",
"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
{
"name": "text",
"data": "图5"
}
]
}
},
{
"name": "text",
"data": "（a）可见，Se-MT/PEDOT器件在光照下的电流有明显提升，当光照移除后，器件的电流迅速下降到一个较低的水平。368，500，600 nm光照射下的光电流分别为0.26，0.46，0.21 nA，暗电流为3.4 pA，计算可得开关比为76，135，62。相比于Se-MT/PEDOT，Se-MT/PEDOT/Ag-NW器件在368，500，600 nm光照下的光电流如"
},
{
"name": "xref",
"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
{
"name": "text",
"data": "图5"
}
]
}
},
{
"name": "text",
"data": "（b）所示，分别提升至2.2，3.7，1.9 nA，暗电流为6.7 pA，开关比提升至328，552，283。一般定义器件在光照下的电流最大值的10%增大到90%的时间间隔为上升时间，以移除光照后的器件从电流最大值的90%减小到10%的时间间隔为下降时间，从"
},
{
"name": "xref",
"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图6"
}
]
}
},
{
"name": "text",
"data": "（a）可以得到Se-MT/PEDOT器件在0 V偏压、500 nm光照下的上升/下降时间为23 ms/59 ms，而从"
},
{
"name": "xref",
"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图6"
}
]
}
},
{
"name": "text",
"data": "（b）可见Se-MT/PEDOT/Ag-NW器件的上升时间和下降时间分别降低至15 ms和38 ms，表明Ag-NW的加入增强了光吸收，光生载流子增多，内建电场增大，等离子体共振效应产生更多的热量加速光生电子空穴对的分离，提高了光电流，减少响应时间，同时降低了光敏区的电容效应，加快了下降时间，因此有助于提高器件的开关比和响应速度。"
}
]
},
{
"name": "fig",
"data": {
"id": "F5",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图5"
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],
"title": [
{
"name": "text",
"data": "Se-MT/PEDOT（a）和Se-MT/PEDOT/Ag-NW（b）器件在0 V偏压下368，500，600 nm光照下的"
},
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"name": "italic",
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{
"name": "text",
"data": "I"
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]
},
{
"name": "text",
"data": "-"
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{
"name": "italic",
"data": [
{
"name": "text",
"data": "t"
}
]
},
{
"name": "text",
"data": "特性曲线。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.5"
}
],
"title": [
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "-"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "t"
}
]
},
{
"name": "text",
"data": " characteristics of Se-MT/PEDOT（a） and Se-MT/PEDOT/Ag-NW（b） photodetectors under 368，500，600 nm light illumination at 0 V."
}
]
}
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"data": "t"
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"data": "曲线"
}
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"label": [
{
"name": "text",
"data": "Fig.6"
}
],
"title": [
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
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]
},
{
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"data": "-"
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"data": [
{
"name": "text",
"data": "t"
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]
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{
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"data": " characteristics of Se-MT/PEDOT（a） and Se-MT/PEDOT/Ag-NW（b） photodetectors under 500 nm light illumination at 0 V"
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"data": [
{
"name": "text",
"data": "为了确定器件光响应工作范围，对上述光电探测器进行了350~700 nm范围光谱测试，光响应度（"
},
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"data": [
{
"name": "text",
"data": "R"
},
{
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"data": [
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"name": "text",
"data": "λ"
}
]
}
]
},
{
"name": "text",
"data": "）可由"
},
{
"name": "xref",
"data": {
"text": "公式（1）",
"type": "disp-formula",
"rid": "DF1",
"data": [
{
"name": "text",
"data": "公式（1）"
}
]
}
},
{
"name": "text",
"data": "计算："
}
]
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"label": [
{
"name": "text",
"data": "（1）"
}
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"name": "p",
"data": [
{
"name": "text",
"data": "其中"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "ph"
}
]
},
{
"name": "text",
"data": "是光电流，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "d"
}
]
},
{
"name": "text",
"data": "是暗电流，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "λ"
}
]
}
]
},
{
"name": "text",
"data": "是入射光的光功率，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "S"
}
]
},
{
"name": "text",
"data": "是器件的有效面积（8.45 × 10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-5"
}
]
},
{
"name": "text",
"data": " cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "）。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "探测度为光电探测器的另一个重要参数，由"
},
{
"name": "xref",
"data": {
"text": "公式（2）",
"type": "disp-formula",
"rid": "DF2",
"data": [
{
"name": "text",
"data": "公式（2）"
}
]
}
},
{
"name": "text",
"data": "计算:"
}
]
},
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"data": {
"label": [
{
"name": "text",
"data": "（2）"
}
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"data": [
{
"name": "text",
"data": "其中"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "q"
}
]
},
{
"name": "text",
"data": "是基本电荷量，"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "J"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "d"
}
]
},
{
"name": "text",
"data": "为器件的暗电流密度。"
},
{
"name": "xref",
"data": {
"text": "图7",
"type": "fig",
"rid": "F7",
"data": [
{
"name": "text",
"data": "图7"
}
]
}
},
{
"name": "text",
"data": "（a）为Se-MT/PEDOT、Se-MT/PEDOT/Ag-NW光电探测器在0 V偏置电压下的光谱响应曲线。从图中可以看到在350~700 nm范围内，两个器件都具有明显的光响应，在500 nm处达到最大值，之后逐渐下降，在700 nm处下降到最低点。Se-MT/PEDOT/Ag-NW器件的响应度相较于Se-MT/PEDOT器件整体提升，响应度峰值由8 mA/W提升至65 mA/W，高于之前报道的方晓生课题组制备的Se/PEDOT异质结光电探测器的响应度（5.5 mA/W）"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "17",
"type": "bibr",
"rid": "R17",
"data": [
{
"name": "text",
"data": "17"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。从"
},
{
"name": "xref",
"data": {
"text": "图7",
"type": "fig",
"rid": "F7",
"data": [
{
"name": "text",
"data": "图7"
}
]
}
},
{
"name": "text",
"data": "（b）看出探测度曲线和响应度曲线的趋势相同，Se-MT/PEDOT和Se-MT/PEDOT/Ag-NW器件的最高探测度在500 nm处，分别是1.02×10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "11 "
}
]
},
{
"name": "text",
"data": "Jones和9.22×10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "11 "
}
]
},
{
"name": "text",
"data": "Jones。结果说明Ag-NW的加入有助于提升器件在可见光范围内的响应度和探测度。"
}
]
},
{
"name": "fig",
"data": {
"id": "F7",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图7"
}
],
"title": [
{
"name": "text",
"data": "Se-MT/PEDOT和Se-MT/PEDOT/Ag-NW器件在0 V偏压下的响应度曲线（a）和探测度曲线（b）"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.7"
}
],
"title": [
{
"name": "text",
"data": "Spectra responsivity（a） and detectivity characteristics（b） of Se-MT/PEDOT和Se-MT/PEDOT/Ag-NW photodetectors at 0 V"
}
]
}
],
"subcaption": [],
"note": [],
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"data": [
{
"name": "text",
"data": "Se-MT/PEDOT/Ag-NW器件在0 V偏压、500 nm光照下的功率响应变化情况如"
},
{
"name": "xref",
"data": {
"text": "图8",
"type": "fig",
"rid": "F8",
"data": [
{
"name": "text",
"data": "图8"
}
]
}
},
{
"name": "text",
"data": "所示，随着入射光功率的不断增强，器件的光电流也随之增大，呈现出对入射光功率变化的良好响应。"
}
]
},
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"caption": [
{
"lang": "zh",
"label": [
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"name": "text",
"data": "图8"
}
],
"title": [
{
"name": "text",
"data": "Se-MT/PEDOT/Ag-NW器件在0 V偏压、不同光强的500 nm照射下的"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "I"
}
]
},
{
"name": "text",
"data": "-"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "t"
}
]
},
{
"name": "text",
"data": "曲线。"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.8"
}
],
"title": [
{
"name": "text",
"data": "Time-dependent photocurrent response at different light intensities of Se-MT/PEDOT/Ag-NW device at zero bias"
}
]
}
],
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"note": [],
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"data": [
{
"name": "text",
"data": "为研究Se-MT/PEDOT、Se-MT/PEDOT/Ag-NW器件的工作原理，能带匹配示意图如"
},
{
"name": "xref",
"data": {
"text": "图9",
"type": "fig",
"rid": "F9",
"data": [
{
"name": "text",
"data": "图9"
}
]
}
},
{
"name": "text",
"data": "所示。Se-MT的电子亲和能为3.2 eV"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "17",
"type": "bibr",
"rid": "R17",
"data": [
{
"name": "text",
"data": "17"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，带隙为1.77 eV"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "12",
"type": "bibr",
"rid": "R12",
"data": [
{
"name": "text",
"data": "12"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "；PEDOT的电子亲和能为3.5 eV"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "26",
"type": "bibr",
"rid": "R26",
"data": [
{
"name": "text",
"data": "26"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，带隙为2.0 eV"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "27",
"type": "bibr",
"rid": "R27",
"data": [
{
"name": "text",
"data": "27"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，形成Se-MT/PEDOT Ⅱ型异质结如"
},
{
"name": "xref",
"data": {
"text": "图 9",
"type": "fig",
"rid": "F9",
"data": [
{
"name": "text",
"data": "图 9"
}
]
}
},
{
"name": "text",
"data": "（a）所示。在光照下，电子-空穴对主要由纯Se-MT的光响应产生，在Se-MT/PEDOT Ⅱ型异质结的内建电场作用下，光生电子从Se转移到PEDOT的最低未占据分子轨道（LUMO）能级被阴极收集，与此同时Se能级"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "E"
}
]
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "v"
}
]
},
{
"name": "text",
"data": "上的空穴直接被阳极收集，导致电子空穴对的分离，减少了复合概率，实现了器件的自驱动特性。加入Ag-NW后，增强了在350~500 nm波长范围内的光吸收，而且Ag-NW和Se/PEDOT形成能级匹配如"
},
{
"name": "xref",
"data": {
"text": "图9",
"type": "fig",
"rid": "F9",
"data": [
{
"name": "text",
"data": "图9"
}
]
}
},
{
"name": "text",
"data": "（b）所示，当入射光照射异质结时，器件对入射光的吸收能力增强，光生载流子增多，在内建电场的作用下光生电子和空穴分离，从而产生更大的光电流，提升了器件的光电性能。"
}
]
},
{
"name": "fig",
"data": {
"id": "F9",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图9"
}
],
"title": [
{
"name": "text",
"data": "器件Se-MT/PEDOT（a）和Se-MT/PEDOT/Ag-NW（b）的能带示意图"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.9"
}
],
"title": [
{
"name": "text",
"data": "Schematic illustration of energy levels of Se-MT/PEDOT（a） and Se-MT/PEDOT/Ag-NW（b） devices"
}
]
}
],
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"note": [],
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"data": {
"title": [
{
"name": "text",
"data": "4 结 论"
}
],
"level": "1",
"id": "s4"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本文通过化学气相沉积法制备了高结晶的Se-MT并通过旋涂法制备Se-MT/PEDOT异质结，同时在异质结表面修饰Ag-NW，分别制备了Se-MT/PEDOT、Se-MT/PEDOT/Ag-NW异质结光电探测器。两款光电探测器都具备350~700 nm的宽光谱探测能力；Se-MT/PEDOT/Ag-NW器件相较于Se-MT/PEDOT，在350~700 nm范围内响应度整体提高，响应度峰值从8 mA/W提升至65 mA/W，开关比从135提升至552，上升和下降时间分别从23 ms和59 ms减少到15 ms和28 ms。可见加入Ag-NW可以增强光电探测器在可见光范围内的光电性能。这也为发展高性能有机-无机自驱动光电探测器提供了一种新的解决方案。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "本文专家审稿意见及作者回复内容的下载地址："
},
{
"name": "extlink",
"data": {
"text": [
{
"name": "text",
"data": "http://cjl.lightpublishing. cn/thesisDetails#10.37188/CJL.20220078."
}
],
"href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220078."
}
}
]
}
]
}
],
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"data": "陈荣鹏,冯仕亮,郑天旭等.Ag纳米线增强硒微米管/聚噻吩自驱动光电探测器性能[J].发光学报,2022,43(08):1273-1280."
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"text": "陈荣鹏,冯仕亮,郑天旭等.Ag纳米线增强硒微米管/聚噻吩自驱动光电探测器性能[J].发光学报,2022,43(08):1273-1280."
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"data": [
{
"name": "text",
"data": "CHEN Rong-peng,FENG Shi-liang,ZHENG Tian-xu,et al.Ag Nanowires Enhance Performance of Self-powered Photodetector Based on Selenium Microtube/Polythiophene[J].Chinese Journal of Luminescence,2022,43(08):1273-1280."
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"text": "CHEN Rong-peng,FENG Shi-liang,ZHENG Tian-xu,et al.Ag Nanowires Enhance Performance of Self-powered Photodetector Based on Selenium Microtube/Polythiophene[J].Chinese Journal of Luminescence,2022,43(08):1273-1280."
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"data": "Supported by National Natural Science Foundation of China（51802124）； The Postdoctoral Science Foundation of China（2019M651693）"
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"history": {
"received": "2022-03-09",
"revised": "2022-03-29",
"ppub": "2022-08-05",
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}
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陈荣鹏
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