高质量Tb₃Sc₂Al₃O₁₂磁光晶体的生长及性能 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "高质量Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "磁光晶体的生长及性能" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Growth and Characterization of Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": " Magneto-optical Crystal" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "郝", "givenname": "元凯", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HAO", "givenname": "Yuan-kai", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "郝元凯（1998-），男，山东枣庄人，硕士研究生，2021年于南华大学获得学士学位，主要从事磁光晶体的生长与稀土离子掺杂磁光性能的研究。Email: hao.yk@mail.sdu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862586&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862596&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862591&type=", "width": "25.00000000", "height": "30.00000000", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "郝元凯" }, { "name": "text", "data": "（1998-），男，山东枣庄人，硕士研究生，2021年于南华大学获得学士学位，主要从事磁光晶体的生长与稀土离子掺杂磁光性能的研究。Email: " }, { "name": "text", "data": "hao.yk@mail.sdu.edu.cn" } ] ] } ], "email": "hao.yk@mail.sdu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "辛", "givenname": "显辉", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XIN", "givenname": "Xian-hui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "蕾", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Lei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "胡", "givenname": "强强", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HU", "givenname": "Qiang-qiang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "付", "givenname": "秀伟", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "FU", "givenname": "Xiu-wei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp", "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail： fxw@sdu.edu.cn", "data": [ { "name": "text", "data": "E-mail： fxw@sdu.edu.cn" } ] }, { "rid": "cor3", "lang": "zh", "text": "Email： fxw@sdu.edu.cn ", "data": [ { "name": "text", "data": "Email： fxw@sdu.edu.cn " } ] } ], "bio": [ { "lang": "zh", "text": [ "付秀伟（1987-），男，湖南邵阳人，博士，教授，博士生导师，2016 年于日本早稻田大学获得博士学位，主要从事人工功能晶体的开发及应用（包括压电晶体、激光晶体、磁光晶体等功能晶体的生长及光电器件制备）的研究。 " ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862615&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862615&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862615&type=", "width": "25.00000000", "height": "30.00000000", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "付秀伟" }, { "name": "text", "data": "（1987-），男，湖南邵阳人，博士，教授，博士生导师，2016 年于日本早稻田大学获得博士学位，主要从事人工功能晶体的开发及应用（包括压电晶体、激光晶体、磁光晶体等功能晶体的生长及光电器件制备）的研究。 " } ] ] } ], "email": "fxw@sdu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "贾", "givenname": "志泰", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "JIA", "givenname": "Zhi-tai", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp", "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "z.jia@sdu.edu.cn", "data": [ { "name": "text", "data": "z.jia@sdu.edu.cn" } ] }, { "rid": "cor4", "lang": "zh", "text": "Email： z.jia@sdu.edu.cn ", "data": [ { "name": "text", "data": "Email： z.jia@sdu.edu.cn " } ] } ], "bio": [ { "lang": "zh", "text": [ "贾志泰（1981-），男，山西平遥人，博士，教授，博士生导师，2009 年于山东大学晶体材料研究所获得博士学位，主要从事人工晶体的生长及性能的研究。 " ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862629&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862629&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862629&type=", "width": "25.00000000", "height": "30.00000000", "fontsize": "" } ], "data": [ [ { "name": "text", "data": "贾志泰" }, { "name": "text", "data": "（1981-），男，山西平遥人，博士，教授，博士生导师，2009 年于山东大学晶体材料研究所获得博士学位，主要从事人工晶体的生长及性能的研究。 " } ] ] } ], "email": "z.jia@sdu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "陶", "givenname": "绪堂", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "TAO", "givenname": "Xu-tang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "山东大学 晶体材料国家重点实验室， 山东 济南　250100", "data": [ { "name": "text", "data": "山东大学 晶体材料国家重点实验室， 山东 济南　250100" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of Crystal Materials， Shandong University， Jinan 250100， China", "data": [ { "name": "text", "data": "State Key Laboratory of Crystal Materials， Shandong University， Jinan 250100， China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "山东理工大学 材料科学与工程学院， 山东 淄博　255000", "data": [ { "name": "text", "data": "山东理工大学 材料科学与工程学院， 山东 淄博　255000" } ] }, { "lang": "en", "label": "2", "text": "School of Materials Science and Engineering， Shandong University of Technology， Zibo 255000， China", "data": [ { "name": "text", "data": "School of Materials Science and Engineering， Shandong University of Technology， Zibo 255000， China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12 " } ] }, { "name": "text", "data": "（TSAG）晶体具有高透过率、高激光损伤阈值、低吸收系数以及比Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "（TGG）更为优异的磁光性能，被认为是理想的磁光材料；但由于晶体在生长过程中会累积大量的热应力，并且出现成分偏析的现象，导致晶体在后期加工和使用过程中容易开裂，严重限制了该晶体的应用。本文通过优化生长工艺，采用提拉法成功生长了高质量且完整无开裂的TSAG磁光晶体。将生长所得的单晶经定向、切割及抛光后获得尺寸合适的样品，并对其热学性能和光学性能进行了系统表征。结果显示，TSAG晶体在400~1 500 nm波段透过率达到84%左右，热学性能优于目前商业化应用较好的TGG晶体，在高功率下应用时变形较小且散热更快，将更好地保护器件安全。TSAG晶体的Verdet常数约为TGG晶体的1.2倍，且晶体生长过程不存在Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "挥发等问题，制备较为简单，有望在可见近红外波段实现商业化应用。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "（TSAG） crystal is attracting much attention for visible and near-infrared isolator applications due to its high transmittance， large laser damage threshold， low absorption coefficient and excellent magneto-optical properties. However， it is difficult to grow large-size crack-free single crystals. In this work，high quality TSAG crystal was successfully grown by the Czochralski method. The transmittance in the wavelength of 400-1 500 nm is as high as 84%. The thermal conductivity is higher than that of commercial Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "（TGG） crystal. More importantly， the Verdent constant of TSAG is 1.2 times that of TGG crystal. Therefore， TSAG crystal is promising magneto-optical crystal for high power isolator applications." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "TSAG" } ], [ { "name": "text", "data": "磁光" } ], [ { "name": "text", "data": "提拉法" } ], [ { "name": "text", "data": "晶体生长" } ], [ { "name": "text", "data": "激光" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "TSAG" } ], [ { "name": "text", "data": "magneto-optic" } ], [ { "name": "text", "data": "Czochralski method" } ], [ { "name": "text", "data": "crystal growth" } ], [ { "name": "text", "data": "laser" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引　　言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "磁光晶体指在外磁场的作用下能够使光的偏振方向发生非互易偏转的晶体材料，是决定光隔离器性能的核心组件，在光通讯和高功率激光系统中具有广泛的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。近年来，随着可见及近红外波段光纤激光器和光通讯技术的不断发展，对高质量、高性能磁光材料的需求也变得越来越大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R3", "R4" ], "text": "3-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "（TGG）磁光晶体由于具有大Verdet常数、高透过率、低吸收系数以及高激光损伤阈值等优点，是目前在该波段商业化应用最广泛的晶体材料之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R5", "R6", "R7" ], "text": "5-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但TGG晶体在生长过程中仍存在Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "易挥发和易出现螺旋生长等问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "（TAG）磁光晶体具有较高的透过率、良好的导热性、低吸收系数以及相比TGG更为优异的磁光性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R8", "R9" ], "text": "8-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，有望满足现代科技的需要。然而，TAG晶体是非一致熔融化合物，难以制备大尺寸单晶" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R9", "R10" ], "text": "9-10", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然Chani等发现通过掺入Lu" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "、Yb" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "或Tm" }, { "name": "sup", "data": [ { "name": "text", "data": "3 +" } ] }, { "name": "text", "data": "可以稳定石榴石结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R11", "R12", "R13" ], "text": "11-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，使晶体具有一致熔融的特性，但研究发现掺杂离子进入晶体十二面体格位会减少Tb" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "浓度，导致晶体磁光性能降低，难以满足应用要求" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "12 " } ] }, { "name": "text", "data": "（TSAG）晶体具有较为优异的磁光性能、高激光损伤阈值、低吸收系数以及容易制备等优点，被认为是在可见及近红外波段应用的理想材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。早在1973年，Brandle与 Barns就发现可以用Sc" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "部分取代TAG晶体八面体格位的Al" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "制备TSAG晶体" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。之后，Yoshikawa等先后通过微下拉法和提拉法成功地制备了TSAG晶体，并通过研究发现，TSAG晶体不仅具有和其他光学晶体一样的光学质量，而且Verdet常数也和TAG晶体相当" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，均高于目前商业化应用较好的TGG晶体。鉴于TSAG晶体优异的磁光性能，许多学者针对TSAG晶体展开了研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是该晶体在生长过程中容易累积大量的热应力，并且出现成分偏析的现象。当晶体尺寸增大到一定程度时，应力得不到释放，会导致晶体在后期加工和使用过程中产生容易开裂的问题" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，严重影响了该晶体的应用。2010年，Shimamura等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "发现用Lu" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "少量取代八面体位置的Sc" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "后，所获{Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "}[Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "2-" } ] }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Lu" }, { "name": "italic", "data": [ { "name": "sub", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "]⁃（Al" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "）O" }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "（TSLAG）晶体不再有开裂的倾向，加工性能也得到了提升。但晶体Verdet常数以及热学性能相较于TSAG都有较大幅度的降低。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了能得到高质量、不开裂的TSAG晶体，更好地理解晶体磁光性能与其他性能的关系，探究掺杂离子对晶体性能的影响，满足大尺寸、高性能器件的需求，本文采用提拉法成功地制备了TSAG晶体，并对其各项性能进行了系统的研究与讨论。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实　　验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　多晶料制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "本实验采用固相烧结法制备TSAG多晶料。按照晶体化学计量比称取Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "、Sc" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "、Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "为原料，初始原料纯度均为99.99%。将称取后的原料放入混料机充分混合48 h。待混合完毕后，将粉体原料压制成圆柱状的块体。然后放入刚玉坩埚中，使用马弗炉在空气中煅烧，以100 ℃/h的速率升温至1 400 ℃保温48 h，保温结束后以100 ℃/h的速率冷却至室温，获得多晶料。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　晶体生长" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "将上述制备的多晶料放入铱金坩埚中，采用提拉法（如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示）进行晶体生长。在高纯Ar气的保护作用下，利用中频感应将原料加热至完全熔化，并在过热15 ℃左右条件下恒温60 min，使熔体充分混合均匀。之后将" }, { "name": "text", "data": "<" }, { "name": "text", "data": "111" }, { "name": "text", "data": ">" }, { "name": "text", "data": "方向的TSAG籽晶缓慢下入熔体，调节好下种温度使籽晶微熔收径，当籽晶直径收细至2~3 mm时，进入自动控制程序进行放肩、等径、收尾等阶段。待晶体生长结束后，缓慢降至室温，取出晶体，于空气中进行高温退火。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "提拉法原理示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Czochralski method schematic diagram" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862633&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862642&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862638&type=", "width": "79.70954895", "height": "55.82836914", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.3　性能测试" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "使用德国Bruker AXS公司生产的D8 ADVANCE多功能粉末衍射仪，在室温条件下测试了晶体粉末和晶体元件表面的衍射图谱，衍射仪光源为Mo K" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "text", "data": " X射线，扫描角度范围为20º ~90º。采用 Perkin-Elmer 公司生产的 Diamond DSC-ZC 同步热分析仪测试晶体比热，测试样品选用 4 mm×4 mm×1 mm的晶片，测温区间为25~300 ℃，升温速率为5 ℃/min。采用Mettler-Toledo公司生产的TMA/SDTA840型热机械分析仪测试晶体的热膨胀，测试样品选用4 mm×4 mm×4 mm的块体，测温范围为25~500 ℃，升温速率为 5 ℃/min。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "采用德国耐驰公司生产的LFA457型热扩散系数测量仪测试晶体热扩散，测试样品选用4 mm×4 mm×1 mm的晶片，样品双面喷涂石墨，热扩散测试温度范围为25~300 ℃。采用Hitachi公司生产的U-3500型UV-Vis-NIR分光光度计测试晶体在可见及近红外波段的透过性能，且通光方向双面抛光。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "采用消光法在室温条件下测试了晶体元件的Verdet常数，测试原理如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示，当未接通电源时，调整检偏器透光方向与起偏器透光方向正交，使之发生消光现象。接通电源后，当一束线偏振光穿过与光传播方向平行磁场作用下的透明晶体时，会产生一定角度的偏转，部分光线会通过检偏器到达接收器，通过调节检偏器来重新实现消光。检偏器旋转的角度为法拉第旋转角，测试样品选用2.5 mm×2.5 mm×10 mm的方棒。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "消光法测试示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "Schematic diagram of extinction test" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862647&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862656&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862651&type=", "width": "108.10412598", "height": "41.05343628", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "以上热学、光学、磁光性能测试中所用晶体均为[111]方向磁光晶体。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　晶体生长与分析" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "采用提拉法生长了" }, { "name": "italic", "data": [ { "name": "text", "data": "Φ" } ] }, { "name": "text", "data": "30 mm的TSAG晶体（如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示）。晶体宏观质量良好，完整无开裂，无包裹物，无宏观缺陷和散射光路，呈无色透明的状态。生长过程中的拉速和转速分别为0.5~1.5 mm/h和15~30 r/min，采用提高转速的方法来增大熔体的流动性，使熔体中的物质分布更加均匀。使用新温场结构，选择合适的温度梯度，在保证晶体能够达到理想尺寸的情况下，通过降低温度梯度来减少产生的热应力和缺陷；生长结束后分阶段按不同速率缓慢降至室温，防止晶体因降温速率太快出现开裂的情况。之后对晶体进行 1 500 ℃高温空气气氛退火，使晶体内部应力得到充分释放。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "TSAG晶体毛坯及加工元件" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "TSAG crystal blank and processed elements" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862666&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862674&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862669&type=", "width": "64.54968262", "height": "53.34997559", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "通过选用合适的温度梯度、提高转速、改善生长工艺的方法，成功地克服了TSAG晶体的开裂问题，生长出大尺寸、无开裂、无色透明的TSAG晶体，对TSAG晶体的优化生长具有一定的参考价值。为更好地表征TSAG晶体各项性能，本文在同样条件下生长了TGG和TSLAG（" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "=0.05）晶体（如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示）作为对比。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "对照组晶体。 （a）TSLAG晶体；（b）TGG晶体。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "The control group. （a）As grown TSLAG crystal. （b）As grown TGG crystal." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862679&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862687&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862683&type=", "width": "65.04907227", "height": "56.76257324", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　结构组成" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（a）所示，测试结果显示在测量的2" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "范围内，TSAG晶体衍射峰的数目和位置与TAG图形基本吻合，表明生长的晶体为高质量的TSAG单晶，没有多余的杂相出现，与TAG晶体同属于立方晶系" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "a-3" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "空间群。通过观察局部放大图可知，TSAG晶体相比于TSLAG晶体峰位略微右移，而相比于TAG晶体峰位向左偏移，这是由于" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Lu3+" } ] }, { "name": "text", "data": "（0.086 1）" }, { "name": "text", "data": ">" }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Sc3+" } ] }, { "name": "text", "data": "（0.074 5）" }, { "name": "text", "data": ">" }, { "name": "text", "data": " " }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Al3+" } ] }, { "name": "text", "data": "（0.053 5），当离子被较大半径的离子取代时，将会导致XRD衍射图谱峰位向小角度方向偏移，因此可以证明Sc" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "成功地取代了Al" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "，Lu" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "成功地取代了Sc" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "。对于切割的（111）晶面的晶体，我们测试了其单晶XRD（如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "（b）所示），观察其衍射峰的位置与标准卡片进行对比确定该晶面为（111）晶面。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "TSAG晶体XRD图谱。 （a）粉末XRD；（b）单晶XRD。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "XRD pattern of TSAG. （a）Powder XRD. （b）Single crystal XRD." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862692&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862701&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862695&type=", "width": "154.57682800", "height": "60.00765991", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "本文利用软件FullProf Suite对粉末衍射数据进行了拟合计算，得到了不同晶体的晶胞参数（如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示），计算结果表明，半径较大离子的成功掺入，将会导致晶体晶格常数变大。此外，我们在TSAG晶体（111）晶面的晶片上均匀地取5个点进行单晶劳厄衍射测试（如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示），测试结果显示，通过提拉法生长的TSAG晶体劳厄衍射图谱呈三条三次对称的衍射团，且衍射斑点清晰，衍射图样一致，所以可以确定获得了所需的晶体且晶体质量较好。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "TAG、TSAG、TSLAG晶体的晶格常数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "Lattice constants of TAG， TSAG and TSLAG crystal" } ] } ], "note": [], "table": [ { "head": [ [ { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "Crystal" } ] }, { "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "Lattice constant" } ] } ] ], "body": [ [ { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "TAG" } ] }, { "name": "p", "data": [ { "name": "text", "data": "TSAG" } ] }, { "name": "p", "data": [ { "name": "text", "data": "TSLAG" } ] } ] }, { "align": "center", "style": "border-bottom:solid;", "data": [ { "name": "p", "data": [ { "name": "text", "data": "12.074" } ] }, { "name": "p", "data": [ { "name": "text", "data": "12.349" } ] }, { "name": "p", "data": [ { "name": "text", "data": "12.351" } ] } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862710&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862705&type=", "width": "76.83181763", "height": "18.34582520", "fontsize": "" } } }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "TSAG晶体Laue衍射图谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "Laue diffraction pattern of TSAG crystal" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862713&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862722&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862718&type=", "width": "71.48458862", "height": "69.16613770", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　热学性能" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "目前，在科技发展和应用需求的促使下，激光逐渐朝着高功率、高质量的方向发展，但激光器在应用过程中，会由于反射光的存在引起放大器系统的寄生振荡或激光二极管频率的不稳定，而且高功率激光器产生的反射光会在短时间内产生大量的热能，导致激光器件损坏。因此，通常在激光系统中安装法拉第隔离器来防止反射光的传播和确保激光单向传输、稳定激光输出。磁光晶体作为光隔离器的核心组件，决定着隔离器的实际性能。为使光隔离器能够满足高功率下应用的要求，需要磁光晶体具有优异的导热性能。所以本文对制备的晶体进行了热学性能的测试与分析。在磁光材料中，比热是影响材料损伤阈值的重要因素之一，我们采用Diamond DSC-ZC 同步热分析仪测试了晶体的比热曲线（如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（a）所示），在所测量的温度范围内TSAG晶体的比热与温度基本成线性关系，且TSAG晶体在较高温度下具有高于TSLAG和TGG晶体的比热性能，高功率应用下更不容易发热，晶体性能更加稳定。之后测试了晶体热膨胀性能（如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（b）所示），通过线性分析得到TGG晶体的热膨胀系数为8.12×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " K" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，TSAG晶体的热膨胀系数为7.89×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " K" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，TSLAG晶体的热膨胀系数为7.06×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " K" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。通过对比可知，三种晶体热膨胀系数相近，均达到应用标准，保证了晶体外形更加稳定，有利于保护器件安全。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "晶体热学性能随温度的变化。 （a）晶体比热随温度的变化；（b）晶体热膨胀随温度的变化；（c）晶体热扩散随温度的变化；（d）晶体热导率随温度的变化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "Variation of thermal properties of crystals with temperature. （a）The specific heat of the crystals as a function of temperature. （b）The thermal expansion of the crystals as a function of temperature. （c）The thermal diffusivities of the crystals as a function of temperature. （d）The thermal conductivity of the crystals as a function of temperature." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862730&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862740&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862734&type=", "width": "139.69432068", "height": "98.12095642", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（c）为晶体热扩散系数随温度的变化，根据测试结果可以知道，随着温度的升高，晶体热扩散系数逐渐减小，TSAG晶体具有比TGG和TSLAG晶体更大的热扩散系数，晶体在高功率下应用时，热量将更快地被传输出去。晶体的热导率是衡量晶体材料热学性能的重要指标，磁光晶体材料的热导率越高，传输热量就越快，使晶体处于较低的温度，避免器件的损坏。我们通过计算得到晶体热导率（如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "（d）所示），计算公式" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "如下：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（1）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862750&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862745&type=", "width": "23.11400032", "height": "4.48733330", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862759&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862756&type=", "width": "2.28600001", "height": "2.62466669", "fontsize": "" } } } ] }, { "name": "text", "data": "为热扩散系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "ρ" } ] }, { "name": "text", "data": "为晶体密度，" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862764&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862761&type=", "width": "3.47133350", "height": "3.72533321", "fontsize": "" } } } ] }, { "name": "text", "data": "为晶体热容。通过对比发现TSAG晶体热导率变化较小，仅在一定范围内波动，且热导率最高，TSLAG晶体热导率先降低后维持在一定范围内波动，TGG晶体热导率随温度的升高而降低，所以相比之下TSAG晶体具有更高热导率，在应用时能够更好的保护器件安全。其中，TSAG和TSLAG晶体热导率出现随温度上升而上升的趋势，这是由于当温度升高时，热扩散减小趋势变缓慢，此时热导率主要由比热决定，比热升高导致热导率出现上升趋势，与文献报道一致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。综合热学性能表征结果可以知道，TSAG晶体具有优于TGG和TSLAG晶体的热学性能，有希望在高功率下实现器件化。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　光学性能" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "在室温条件下对TSAG晶体进行了透过率的测试，测试结果如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示，测试的波长范围为200~1 800 nm。通过测试，可以看到TGG、TSAG和TSLAG晶体在400~1 500 nm波段均有着较高的透过率，其中TSAG晶体透过率达到84%左右。晶体在487 nm处存在一个吸收峰，这是由于Tb" }, { "name": "sup", "data": [ { "name": "text", "data": "3+" } ] }, { "name": "text", "data": "离子在 487 nm处存在特征吸收峰，对应着" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "F" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "-" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": "D" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "的能级跃迁，随着波长增大，晶体透过率没有明显的改变，直到1 550 nm处透过率急剧下降，形成一个吸收截止边；但该晶体在400~1 500 nm波段具有较高的透过率，适用于目前光通信波段。因此TSAG晶体是在可见及近红外波段用于制备法拉第隔离器的理想晶体材料。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "晶体透过率随波长的变化" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 8" } ], "title": [ { "name": "text", "data": "Variation of crystal transmittance with wavelength" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862765&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862771&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862768&type=", "width": "63.85557556", "height": "47.75047302", "fontsize": "" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.5　磁光性能" } ], "level": "2", "id": "s3e" } }, { "name": "p", "data": [ { "name": "text", "data": "Verdet常数是磁光晶体最重要的性能指标，它代表磁光晶体的法拉第旋转能力。晶体的Verdet常数越大，越容易获得更大的法拉第偏转角，越有利于器件的小型化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "我们通过自主搭建的磁光性能测试设备，在室温条件下测试了TSAG晶体的旋转角随波长和磁场的变化，测试结果如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（a）所示。通过测试结果可以看出，TSAG磁光晶体法拉第旋转角随磁场强度的增大而增大，随波长的增大而减小，在室温下，晶体在1 064 nm波段的法拉第旋转角相比于515 nm和650 nm波段变化较小。之后我们通过下列公式" }, { "name": "sup", "data": [ { "name": "text", "data": " [" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "计算出晶体的Verdet常数：" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "（2）" } ], "data": [ { "name": "math", "data": { "math": "", "graphicsData": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862776&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862773&type=", "width": "21.67466736", "height": "2.70933342", "fontsize": "" } } }, { "name": "text", "data": "，" } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "θ" } ] }, { "name": "text", "data": "为法拉第旋转角，" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "为材料的Verdet常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "H" } ] }, { "name": "text", "data": "为磁场强度，" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "为材料的长度。将所得数据进行拟合得出晶体的Verdet常数与波长的函数关系（如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "（b）所示）。通过分析拟合数据可知，在室温条件下，晶体的Verdet常数随波长的增大而减小，且随着波长的增大，减小的速率变得越来越缓慢。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "晶体磁光性能。 （a）TSAG晶体法拉第旋转角随波长和磁场的变化；（b）磁光晶体Verdet常数随波长的变化。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.9" } ], "title": [ { "name": "text", "data": "Magneto optic properties of crystals. （a）Faraday rotation angle of TSAG crystal changes with wavelength and magnetic field. （b）Variation of Verdet constant with wavelength." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862778&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862785&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=35862782&type=", "width": "161.95452881", "height": "56.88691711", "fontsize": "" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "由于法拉第隔离器要求偏振光产生一定角度的偏转，而偏转角度与晶体Verdet常数和长度有关，晶体的Verdet常数越大，满足旋转角度所需尺寸就越小，越有利于增大器件的稳定性和灵敏性，促使器件朝小型化方向发展。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "在可见及近红外波段，虽然目前发展的磁光晶体种类有很多，但具有实际应用价值的晶体却极少，其中稀土钼酸盐体系中的Li" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Tb" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "（MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "）" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "晶体具有明显高于TGG和TSAG晶体的Verdet常数（如表２所示），但其生长过程中存在MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "挥发的问题，且其吸收系数较高，导致晶体磁光优值低于TGG晶体，限制了该晶体的器件化应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。TAG晶体虽然具有优异的磁光性能，但由于该晶体为非一致熔融化合物，无法采用提拉法进行生长，且不易生长大尺寸晶体，较难实现应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。TSLAG晶体虽然在一定程度上缓解了TSAG晶体开裂的现象，但晶体磁光性能和热学性能有所降低。而TSAG晶体在515，650，1 064 nm处的Verdet常数分别为-283.4， -152.2，-49.8 rad/（m·T），均高于TSLAG和TGG晶体，其中在515 nm处Verdet常数约为TGG晶体的1.2倍，与文献报道值较为相近" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。并且晶体生长过程中不存在挥发，生长工艺较为简单，有利于实现器件的小型化，满足现代科技发展的需要。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "总之，TSAG晶体在可见及近红外波段具有优异的磁光性能，是制备光隔离器等器件的理想材料，有望实现较好的商业化应用。" } ] }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "几种应用于可见及近红外波段磁光晶体性能对比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.2" } ], "title": [ { "name": "text", "data": "Performance comparison of several magneto-optical crystals used in visible and near infrared bands" } ] } ], "note": [], "table": [ { "head": [ [ { "rowspan": "2", "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "Crystal" } ] }, { "rowspan": "2", "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "Congruent melting or not" } ] }, { "rowspan": "2", "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "Difficult and easy to grow" } ] }, { "colspan": "3", "align": "center", "style": "border-top:solid;border-bottom:solid;", "data": [ { "name": "text", "data": "Verdet constant/ 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