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In0.49Ga0.51P材料有序度对发光特性的影响
材料合成及性能 | 更新时间：2022-10-19
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In0.49Ga0.51P材料有序度对发光特性的影响 增强出版
- Effect of Orderliness of In0.49Ga0.51P Material on Luminescence Characteristics
- 发光学报 2022年 43卷 第6期 (2022)
- 作者机构：长春理工大学 高功率半导体国家重点实验室,吉林,长春,130022;长春理工大学 重庆研究院,重庆,401135
- 作者简介：
- 基金信息：吉林省科技发展计划(20210201089GX);重庆市自然科学基金(cstc2021jcyj-msxmX1060)
- DOI：10.37188/CJL.20220059 中图分类号： O482.31
纸质出版日期：2022-06-05，
收稿日期：2022-03-01，
修回日期：2022-03-20，
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引用本文
刘伟超,王海珠,王嘉宾等.In0.49Ga0.51P材料有序度对发光特性的影响[J].发光学报,2022,43(06):862-868.
LIU Wei-chao,WANG Hai-zhu,WANG Jia-bin,et al.Effect of Orderliness of In0.49Ga0.51P Material on Luminescence Characteristics[J].Chinese Journal of Luminescence,2022,43(06):862-868.
刘伟超,王海珠,王嘉宾等.In0.49Ga0.51P材料有序度对发光特性的影响[J].发光学报,2022,43(06):862-868. DOI： 10.37188/CJL.20220059.
LIU Wei-chao,WANG Hai-zhu,WANG Jia-bin,et al.Effect of Orderliness of In0.49Ga0.51P Material on Luminescence Characteristics[J].Chinese Journal of Luminescence,2022,43(06):862-868. DOI： 10.37188/CJL.20220059.
In0.49Ga0.51P材料有序度对发光特性的影响 增强出版
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"data": "P材料的有序度发生变化，进而导致其发光特性发生改变。本文利用金属有机化学气相沉积（MOCVD）技术，在半绝缘的GaAs衬底上开展In"
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"data": "）和二乙基锌（DEZn）掺杂剂的掺杂流量和Ⅴ/Ⅲ比的方法来改变In"
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"data": [
{
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{
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"data": "P材料的有序度。室温光致发光测试（PL）和低温PL测试结果表明，两种掺杂剂掺杂流量增加都会导致In"
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"data": "P有序度降低，从而使InGaP的发光波长蓝移。此外，Ⅴ/Ⅲ比增加会导致In"
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{
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"data": "P material， as a semiconductor material with broad energy bandgap and matching lattice parameters with GaAs， has obtained widespread attention and application， such as GaAs-based short-wavelength lasers and aluminum-free lasers. Aiming on its applications in different fields， different demands are proposed on the properties of In"
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"data": "InGaP是应用在太阳能电池、发光二极管和异质结双晶体管等发光器件中的重要材料"
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"text": "1-2",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。与GaAs晶格匹配的In"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "0.49"
}
]
},
{
"name": "text",
"data": "Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "0.51"
}
]
},
{
"name": "text",
"data": "P（为了简洁，下文统一采用InGaP替代In"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "0.49"
}
]
},
{
"name": "text",
"data": "Ga"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "0.51"
}
]
},
{
"name": "text",
"data": "P）材料被认为是AlGaAs/GaAs材料体系的替代方案，从而实现无Al化高质量和高可靠性器件的制备"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "3",
"type": "bibr",
"rid": "R3",
"data": [
{
"name": "text",
"data": "3"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。AlGaAs/GaAs材料体系因晶格匹配、外延工艺成熟等优点受到了广泛的关注和应用"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "4",
"type": "bibr",
"rid": "R4",
"data": [
{
"name": "text",
"data": "4"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "6",
"type": "bibr",
"rid": "R6",
"data": [
{
"name": "text",
"data": "6"
}
]
}
}
],
"rid": [
"R4",
"R5",
"R6"
],
"text": "4-6",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。然而，由于AlGaAs材料易氧化，会导致器件的端面复合速率增加而产生光学灾变损伤，使器件的工作寿命和可靠性下降"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "7",
"type": "bibr",
"rid": "R7",
"data": [
{
"name": "text",
"data": "7"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "9",
"type": "bibr",
"rid": "R9",
"data": [
{
"name": "text",
"data": "9"
}
]
}
}
],
"rid": [
"R7",
"R8",
"R9"
],
"text": "7-9",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。与传统的AlGaAs/GaAs材料体系相比，使用InGaP/GaAs体系的半导体激光器具有如下优点：（1）InGaP材料的表面复合速率较低，可有效地降低半导体激光器的端面温度，从而能够实现高输出功率下的可靠工作"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "10",
"type": "bibr",
"rid": "R10",
"data": [
{
"name": "text",
"data": "10"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "11",
"type": "bibr",
"rid": "R11",
"data": [
{
"name": "text",
"data": "11"
}
]
}
}
],
"rid": [
"R10",
"R11"
],
"text": "10-11",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "；（2）InGaP限制层材料的较高导电性和导热性使得半导体激光器可在高功率下获得更好的转换效率"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "12",
"type": "bibr",
"rid": "R12",
"data": [
{
"name": "text",
"data": "12"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "；（3）由于再生界面上没有含Al化合物，所以有利于进行多次外延和构成掩埋结构的半导体激光器发展"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "13",
"type": "bibr",
"rid": "R13",
"data": [
{
"name": "text",
"data": "13"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。因此开展GaAs基InGaP材料的研究极具意义。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "金属有机化学气相沉积（MOCVD）技术因为可以制备高质量的异质结构受到了广泛的关注和研究"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "blockXref",
"data": {
"data": [
{
"name": "xref",
"data": {
"text": "14",
"type": "bibr",
"rid": "R14",
"data": [
{
"name": "text",
"data": "14"
}
]
}
},
{
"name": "text",
"data": "-"
},
{
"name": "xref",
"data": {
"text": "16",
"type": "bibr",
"rid": "R16",
"data": [
{
"name": "text",
"data": "16"
}
]
}
}
],
"rid": [
"R14",
"R15",
"R16"
],
"text": "14-16",
"type": "bibr"
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。利用MOCVD技术生长InGaP/GaAs异质结时，InGaP的发光特性会随着生长参数的改变而发生变化"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "17",
"type": "bibr",
"rid": "R17",
"data": [
{
"name": "text",
"data": "17"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。这是因为InGaP材料具有一种有序现象，并且InGaP的有序倾向比其他Ⅲ-Ⅴ族三元化合物更强。InGaP有序结构的衍射模式对应于Cu-Pt型晶体结构。完全有序的InGaP材料中GaP和InP单层沿闪锌矿结构对角线"
},
{
"name": "text",
"data": "<"
},
{
"name": "text",
"data": "111"
},
{
"name": "text",
"data": ">"
},
{
"name": "text",
"data": "方向交替排列"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "18",
"type": "bibr",
"rid": "R18",
"data": [
{
"name": "text",
"data": "18"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。当InGaP材料从有序结构变化到无序结构时，许多物理性质也会发生突变，有序的InGaP的能量带隙比Ga原子和In原子完全随机分布的无序结构的能量带隙窄约160 meV"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "19",
"type": "bibr",
"rid": "R19",
"data": [
{
"name": "text",
"data": "19"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。对于InGaP材料而言，掺杂水平和Ⅴ/Ⅲ比等因素会影响到InGaP材料的有序度"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "20",
"type": "bibr",
"rid": "R20",
"data": [
{
"name": "text",
"data": "20"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，从而改变InGaP的能量带隙。因此，本文通过改变掺杂源流量和Ⅴ/Ⅲ比进行InGaP有序度对发光特性影响的探究工作，通过室温PL和低温PL测试分析不同生长参数下样品发光特性随有序度的变化情况。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "2 实 验"
}
],
"level": "1",
"id": "s2"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "利用德国Aixtron公司200/4型MOCVD外延设备进行InGaP材料的制备。以三甲基镓（TMGa）和三甲基铟（TMIn）为Ⅲ族源，砷烷（AsH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "）和磷烷（PH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "）为Ⅴ族源，采用高纯氢气（H"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "）作为Ⅲ族源的载气，外延生长过程在富Ⅴ族源的情况下进行。反应室压力始终保持为10 000 Pa（100 mbar），托盘的旋转速度约为100 r·min"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "。为了降低样品生长过程中其他因素的影响，所有样品的生长温度、生长速率和衬底类型等生长参数都保持不变。使用半绝缘GaAs（100）衬底进行InGaP掺杂外延层的生长，生长温度为650 ℃，生长厚度为500 nm。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "选用SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "作为N型掺杂剂，N型变掺杂源流量样品的Ⅴ/Ⅲ比设定为200，掺杂源流量设定为0，10，20，30，40，50，60 mL·min"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "。选用DEZn作为P型掺杂剂，变Ⅴ/Ⅲ比掺Zn-InGaP样品的掺杂源流量为4 mL·min"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "，Ⅴ/Ⅲ比分别设定为40，90，160，200。P型变掺杂源流量样品的Ⅴ/Ⅲ比设定为200，掺杂源流量设定为0，2，4，8，10，20，30，40 mL·min"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "。"
}
]
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "为了评估所有样品的光学性能、电学性能和表面质量，采用（RPM 2000）室温PL光谱测试了InGaP样品的光学性质，光源波长为477 nm，功率密度为2.05 mW·cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-2"
}
]
},
{
"name": "text",
"data": "。利用iHR550光谱仪对样品进行了低温PL测试，光源波长为477 nm，功率密度为80 mW·cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-2"
}
]
},
{
"name": "text",
"data": "。采用美国Bio-Rad的直流霍尔测试设备（HL5500PC）对样品的电学性能进行测试。使用原子力显微镜（AFM）分析变Ⅴ/Ⅲ比样品的表面形貌和均方根（RMS）表面粗糙度。"
}
]
}
]
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "3 结果与讨论"
}
],
"level": "1",
"id": "s3"
}
},
{
"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "3.1 SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "流量对掺Si-InGaP发光特性的影响"
}
],
"level": "2",
"id": "s3a"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "为了探究Si掺杂对InGaP样品发光特性的影响，本文对含不同SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "流量的N型InGaP样品进行室温PL测试，测试结果如"
},
{
"name": "xref",
"data": {
"text": "图1",
"type": "fig",
"rid": "F1",
"data": [
{
"name": "text",
"data": "图1"
}
]
}
},
{
"name": "text",
"data": "所示。从图中可知，本征InGaP材料的发光波长在663.3 nm附近，随着SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "流量的增加，InGaP的发光波长逐渐发生蓝移。SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "流量为60 mL·min"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "时，样品的发光波长最短，该掺杂样品的能量带隙比本征InGaP宽79.94 meV左右。InGaP波长发生蓝移是因为SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "流量的增加导致InGaP样品中载流子浓度增加，在存在大量施主供体的情况下，InGaP掺杂费米能级的移动增加了带负电荷的Ⅲ族原子空位点缺陷的浓度，Ⅲ族原子空位点缺陷的扩散系数也随之增加"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "21",
"type": "bibr",
"rid": "R21",
"data": [
{
"name": "text",
"data": "21"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，从而使Ⅲ族原子的扩散系数增加"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "22",
"type": "bibr",
"rid": "R22",
"data": [
{
"name": "text",
"data": "22"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。Ⅲ族原子的扩散系数增加使InGaP中大量的In和Ga原子发生相互扩散，使得有序结构在后续的生长过程中随机化"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "23",
"type": "bibr",
"rid": "R23",
"data": [
{
"name": "text",
"data": "23"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。因此，SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "流量的增加降低了InGaP的有序度，使InGaP的能量带隙变宽。"
}
]
},
{
"name": "fig",
"data": {
"id": "F1",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图1"
}
],
"title": [
{
"name": "text",
"data": "掺Si-InGaP室温PL与SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "流量的关系"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.1"
}
],
"title": [
{
"name": "text",
"data": "The room temperature PL of Si-doped InGaP as a function of SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": " flow rate"
}
]
}
],
"subcaption": [],
"note": [],
"graphics": [
{
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"data": [
{
"name": "text",
"data": "为了进一步验证InGaP有序度的降低是由Si掺杂引起载流子浓度增加所导致的，对N型掺杂样品进行了Hall测试，测试结果如"
},
{
"name": "xref",
"data": {
"text": "图2",
"type": "fig",
"rid": "F2",
"data": [
{
"name": "text",
"data": "图2"
}
]
}
},
{
"name": "text",
"data": "所示。随着SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "流量的增加，样品的载流子浓度从2.93×10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "16"
}
]
},
{
"name": "text",
"data": " cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-3"
}
]
},
{
"name": "text",
"data": "增加到1.10×10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "18"
}
]
},
{
"name": "text",
"data": " cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-3"
}
]
},
{
"name": "text",
"data": "、载流子迁移率从 2 490 cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "·V"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "·s"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "降低到542 cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "·V"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "·s"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "、面电阻率从1 710 Ω·□"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "降低到215 Ω·□"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "。SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "流量的增加使样品中杂质能级增多，本征状态时无法跃迁至导带的电子数量增多。同时，价带中形成电子的数量也增多，导致样品中的载流子浓度增加。Hall测试证明SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "掺杂流量的增加导致InGaP中的载流子浓度增大，降低了InGaP材料的有序度，增大其能量带隙。"
}
]
},
{
"name": "fig",
"data": {
"id": "F2",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图2"
}
],
"title": [
{
"name": "text",
"data": "掺Si-InGaP的电性能与SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": "流量的关系"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.2"
}
],
"title": [
{
"name": "text",
"data": "The electrical properties of Si-doped InGaP as a function of SiH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "4"
}
]
},
{
"name": "text",
"data": " flow rate"
}
]
}
],
"subcaption": [],
"note": [],
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{
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"data": {
"title": [
{
"name": "text",
"data": "3.2 Ⅴ/Ⅲ比对掺Zn-InGaP发光特性的影响"
}
],
"level": "2",
"id": "s3b"
}
},
{
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"data": [
{
"name": "text",
"data": "为了探究Ⅴ/Ⅲ比对掺Zn-InGaP发光特性的影响，在生长温度为650 ℃、DEZn流量为4 mL·min"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "的条件下，生长不同Ⅴ/Ⅲ比的样品并进行室温PL测试，测试结果如"
},
{
"name": "xref",
"data": {
"text": "图3",
"type": "fig",
"rid": "F3",
"data": [
{
"name": "text",
"data": "图3"
}
]
}
},
{
"name": "text",
"data": "所示。随着Ⅴ/Ⅲ比的增加，InGaP的发光波长逐渐从638.1 nm红移到652.8 nm，样品的能量带隙变窄43.75 meV左右。InGaP的发光波长红移是由于Ⅴ/Ⅲ比增大提高了外延片表面PH"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "及其聚合物的浓度，使Ⅲ族原子在外延片表面的停留时间减短"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "20",
"type": "bibr",
"rid": "R20",
"data": [
{
"name": "text",
"data": "20"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，从而优化了材料的表面形貌，增加了材料的有序度，减小InGaP材料的能量带隙。"
}
]
},
{
"name": "fig",
"data": {
"id": "F3",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图3"
}
],
"title": [
{
"name": "text",
"data": "掺Zn-InGaP室温PL与Ⅴ/Ⅲ比的关系"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.3"
}
],
"title": [
{
"name": "text",
"data": "The room temperature PL of Zn-doped InGaP as a function of Ⅴ/Ⅲ ratio"
}
]
}
],
"subcaption": [],
"note": [],
"graphics": [
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{
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"data": [
{
"name": "text",
"data": "为了验证InGaP有序度的增加是由材料表面质量提高所导致的，对部分变Ⅴ/Ⅲ比样品进行了AFM测试，测试结果如"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "所示。"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "（a）是Ⅴ/Ⅲ比为90的掺Zn-InGaP样品测试图，该样品台面高度差距较大，其表面粗糙度"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Ra"
}
]
},
{
"name": "text",
"data": "为3.11 nm。"
},
{
"name": "xref",
"data": {
"text": "图4",
"type": "fig",
"rid": "F4",
"data": [
{
"name": "text",
"data": "图4"
}
]
}
},
{
"name": "text",
"data": "（b）为Ⅴ/Ⅲ比为200的掺Zn-InGaP样品测试图，该样品台面高度较为均匀"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "24",
"type": "bibr",
"rid": "R24",
"data": [
{
"name": "text",
"data": "24"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，其表面粗糙度"
},
{
"name": "italic",
"data": [
{
"name": "text",
"data": "Ra"
}
]
},
{
"name": "text",
"data": "为2.52 nm。AFM测试证明，随着Ⅴ/Ⅲ比的增加，掺Zn-InGaP材料的表面粗糙度降低，表面质量得到了提升，从而使得 InGaP的有序度增加，能量带隙减小。"
}
]
},
{
"name": "fig",
"data": {
"id": "F4",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图4"
}
],
"title": [
{
"name": "text",
"data": "掺Zn-InGaP样品变Ⅴ/Ⅲ比的AFM测试图"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.4"
}
],
"title": [
{
"name": "text",
"data": "The surface quality of Zn-doped InGaP as a function of Ⅴ/Ⅲ ratio"
}
]
}
],
"subcaption": [],
"note": [],
"graphics": [
{
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},
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"name": "sec",
"data": [
{
"name": "sectitle",
"data": {
"title": [
{
"name": "text",
"data": "3.3 Zn流量对掺Zn-InGaP发光特性的影响"
}
],
"level": "2",
"id": "s3c"
}
},
{
"name": "p",
"data": [
{
"name": "text",
"data": "为了探究Zn掺杂对样品发光特性的影响，对掺Zn-InGaP样品进行了室温PL测试，测试结果如"
},
{
"name": "xref",
"data": {
"text": "图5",
"type": "fig",
"rid": "F5",
"data": [
{
"name": "text",
"data": "图5"
}
]
}
},
{
"name": "text",
"data": "所示。从图中发现随着DEZn流量的增加， InGaP的发光波长逐渐发生蓝移。当DEZn流量从8 mL·min"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "增加到40 mL·min"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "，样品的波长从650.7 nm蓝移到634.0 nm，样品的能量带隙变宽50.20 meV左右。InGaP波长发生蓝移是由于DEZn流量的增加导致InGaP样品中载流子浓度增大，在存在大量受主供体的情况下，InGaP的掺杂费米能级向价带移动，增大了带正电的Ⅲ族自间隙点缺陷的浓度；此外，Zn掺杂浓度增大将会诱导带正电荷的Ⅲ族自间隙点缺陷达到过饱和"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "25",
"type": "bibr",
"rid": "R25",
"data": [
{
"name": "text",
"data": "25"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，加强Ⅲ族原子的互扩散"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "26",
"type": "bibr",
"rid": "R26",
"data": [
{
"name": "text",
"data": "26"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "，引起InGaP有序度降低，使其能量带隙增大。"
}
]
},
{
"name": "fig",
"data": {
"id": "F5",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图5"
}
],
"title": [
{
"name": "text",
"data": "掺Zn-InGaP 的室温PL与DEZn流量的关系"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.5"
}
],
"title": [
{
"name": "text",
"data": "The room temperature PL of Zn-doped InGaP as a function of DEZn flow rate"
}
]
}
],
"subcaption": [],
"note": [],
"graphics": [
{
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{
"name": "p",
"data": [
{
"name": "text",
"data": "为了验证InGaP有序度的降低是由Zn掺杂引起载流子浓度增加所导致的，对掺Zn-InGaP样品进行了Hall测试，测试结果如"
},
{
"name": "xref",
"data": {
"text": "图6",
"type": "fig",
"rid": "F6",
"data": [
{
"name": "text",
"data": "图6"
}
]
}
},
{
"name": "text",
"data": "所示。从图中可知，本征InGaP样品中载流子浓度为-2.93×10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "16"
}
]
},
{
"name": "text",
"data": " cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-3"
}
]
},
{
"name": "text",
"data": "，样品的载流子浓度随着DEZn流量的增加而增加，样品的面电阻率随DEZn流量的增加呈现出先增大后减小的趋势。且当DEZn流量达到2 mL·min"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "时，面电阻率为最大值，即2 690 Ω·□"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "，此时样品处于杂质的高度补偿状态"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "["
},
{
"name": "xref",
"data": {
"text": "27",
"type": "bibr",
"rid": "R27",
"data": [
{
"name": "text",
"data": "27"
}
]
}
},
{
"name": "text",
"data": "]"
}
]
},
{
"name": "text",
"data": "。样品中的载流子迁移率随着DEZn流量的增加逐渐降低，从2 490 cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "·V"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "·s"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "降低到52 cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "·V"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "·s"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-1"
}
]
},
{
"name": "text",
"data": "。Hall测试证明了随着DEZn流量的增加，InGaP中载流子浓度逐渐增大，降低了InGaP的有序度，使其能量带隙增大。"
}
]
},
{
"name": "fig",
"data": {
"id": "F6",
"caption": [
{
"lang": "zh",
"label": [
{
"name": "text",
"data": "图6"
}
],
"title": [
{
"name": "text",
"data": "掺Zn-InGaP的电学性能与DEZn流量的关系"
}
]
},
{
"lang": "en",
"label": [
{
"name": "text",
"data": "Fig.6"
}
],
"title": [
{
"name": "text",
"data": "The electrical properties of Zn-doped InGaP as a function of DEZn flow rate"
}
]
}
],
"subcaption": [],
"note": [],
"graphics": [
{
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{
"name": "p",
"data": [
{
"name": "text",
"data": "为了进一步验证掺Zn对InGaP材料发光特性产生的影响，分别选用本征和载流子浓度为2.6×10"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "17"
}
]
},
{
"name": "text",
"data": " cm"
},
{
"name": "sup",
"data": [
{
"name": "text",
"data": "-3"
}
]
},
{
"name": "text",
"data": "的InGaP样品进行低温PL测试，两个样品分别命名为A和B，利用其在20 K下PL的能量带隙进行有序度计算。本征InGaP（A样品）的变温PL光谱如"
},
{
"name": "xref",
"data": {
"text": "图7",
"type": "fig",
"rid": "F7",
"data": [
{
"name": "text",
"data": "图7"
}
]
}
},
{
"name": "text",
"data": "所示，A样品从15 K逐渐升温到300 K的过程中只有一个发光峰（将该峰命名为P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
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"data": "）存在。P"
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"data": "峰为自由激子复合发光峰，其能量带隙为1 893 meV，利用"
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"data": "来计算本征InGaP的有序度"
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"text": "28",
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"rid": "R28",
"data": [
{
"name": "text",
"data": "28"
}
]
}
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"data": "]"
}
]
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"data": "："
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"data": {
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"rid": "R25",
"data": [
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"data": "25"
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"data": "A样品变温PL测试图"
}
]
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"label": [
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"data": "Fig.7"
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"title": [
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"data": "Variable temperature PL test diagram of sample A"
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"data": "同样，对载流子浓度为2.6×10"
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"data": "17"
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"data": " cm"
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"data": [
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"data": "-3"
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"data": "的掺Zn-InGaP（B样品）进行低温PL测试，测试结果如"
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"text": "图8",
"type": "fig",
"rid": "F8",
"data": [
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"data": "图8"
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}
},
{
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"data": "所示。测试结果显示B样品在15 K时存在3个发光峰（分别将其命名为P"
},
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"name": "sub",
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"data": "1"
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"data": "、P"
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"data": "2"
}
]
},
{
"name": "text",
"data": "和P"
},
{
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"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "峰）。此时P"
},
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"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "峰的发光强度最强，P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "、P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "峰的发光强度较弱。随着温度升高，P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "、P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "和P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "峰的发光强度逐渐减弱，但P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "和P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "峰发光强度的衰减趋势更强，最后P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "和P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "峰逐渐并入到P"
},
{
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"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "峰中，且三个峰的峰位均随着温度升高发生红移。P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "峰为自由激子复合发光峰，P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "2"
}
]
},
{
"name": "text",
"data": "和P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "3"
}
]
},
{
"name": "text",
"data": "峰为Zn掺杂引入的杂质发光峰。利用能量带隙最高的P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "峰进行有序度计算，将P"
},
{
"name": "sub",
"data": [
{
"name": "text",
"data": "1"
}
]
},
{
"name": "text",
"data": "峰在20 K下的能量带隙1 977 meV代入"
},
{
"name": "xref",
"data": {
"text": "公式（1）",
"type": "disp-formula",
"rid": "DF1",
"data": [
{
"name": "text",
"data": "公式（1）"
}
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}
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"data": "中计算得出"
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"data": "值为0.244。通过低温PL测试发现Zn的引入导致了InGaP材料出现杂质发光峰，使InGaP的能量带隙变宽、有序度参数"
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"data": "的值降低。"
}
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"label": [
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"data": "B样品变温PL测试图"
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"label": [
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"data": "Fig.8"
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}
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},
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"data": [
{
"name": "text",
"data": "本文采用MOCVD技术，针对InGaP材料有序度影响其发光特性这一现象进行了探究。通过改变掺杂源流量和Ⅴ/Ⅲ比的方式来改变InGaP的有序度，分别采用室温PL和低温PL测试对样品的发光特性进行表征。通过测试分析发现，两种掺杂剂流量的增加都会导致InGaP中载流子浓度增大，使InGaP中不同的带电点缺陷浓度增加，从而使Ⅲ族In原子和Ga原子发生相互扩散，降低InGaP的有序度，使其发光波长发生蓝移。而Ⅴ/Ⅲ比的增加会减少InGaP中Ⅲ族原子在表面的迁移时间，提升材料的表面质量，导致InGaP的有序度增大，使其发光波长发生红移。低温PL测试也表明DEZn的掺入会使得InGaP材料中出现杂质发光峰，使InGaP的能量带隙变宽，有序度参数"
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"data": "值下降。"
}
]
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"data": [
{
"name": "text",
"data": "本文专家审稿意见及作者回复内容的下载地址："
},
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"name": "extlink",
"data": {
"text": [
{
"name": "text",
"data": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220059."
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"href": "http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220059."
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],
"footnote": [],
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"data": "InGaP/GaAs外延材料合金有序度的表征"
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"name": "text",
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"title": "InGaP/GaAs外延材料合金有序度的表征"
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"text": [
{
"name": "text",
"data": "WU J"
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{
"name": "text",
"data": "SHANG X Z"
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{
"name": "text",
"data": "Characterization of alloy orderliness in InGaP/GaAs epitaxial materials"
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"data": " ［J］. "
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"data": "Mater. Rep."
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"data": "P材料有序度对发光特性的影响[J].发光学报,2022,43(06):862-868."
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"text": "刘伟超,王海珠,王嘉宾等.In0.49Ga0.51P材料有序度对发光特性的影响[J].发光学报,2022,43(06):862-868."
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"data": [
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"data": "LIU Wei-chao,WANG Hai-zhu,WANG Jia-bin,et al.Effect of Orderliness of In"
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"text": "LIU Wei-chao,WANG Hai-zhu,WANG Jia-bin,et al.Effect of Orderliness of In0.49Ga0.51P Material on Luminescence Characteristics[J].Chinese Journal of Luminescence,2022,43(06):862-868."
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"text": [
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"data": "吉林省科技发展计划（20210201089GX）； 重庆市自然科学基金（cstc2021jcyj-msxmX1060）资助项目"
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"text": [
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"data": "Supported by Jilin Science and Technology Development Plan（20210201089GX）； Natural Science Foundation of Chongqing City（cstc2021jcyj-msxmX1060）"
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"history": {
"received": "2022-03-01",
"revised": "2022-03-20",
"ppub": "2022-06-05",
"opub": "2022-10-19"
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"journalTitle": "发光学报",
"issue": "6",
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}
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