基于二维材料的快速响应金属-半导体-金属结构光电探测器研究进展 增强出版

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jiting@tyut.edu.cn", "data": [ { "name": "text", "data": "*E-mail: jiting@tyut.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "冀婷(1981-)，女，山西平遥人，博士，副教授，硕士生导师，2011年于复旦大学获得博士学位，主要从事微纳光子与光电子学领域的研究。E-mail: jiting@tyut.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020081&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020082&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020083&type=" } ], "data": [ [ { "name": "text", "data": "冀婷" }, { "name": "text", "data": "(1981-)，女，山西平遥人，博士，副教授，硕士生导师，2011年于复旦大学获得博士学位，主要从事微纳光子与光电子学领域的研究。E-mail: " }, { "name": "text", "data": "jiting@tyut.edu.cn" } ] ] } ], "email": "jiting@tyut.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "石", "givenname": "林林", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "SHI", "givenname": "Lin-lin", "namestyle": "eastern", "prefix": "" } ], 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"(1984-)，男，湖北黄冈人，博士，教授，博士生导师，2011年于新加坡南洋理工大学获得博士学位，主要从事光纤激光器、非线性光学、光纤通信与电子器件、新型功能材料光电子特性、基于石墨烯/类硫化钼异质结的高速光调制器关键技术等方向的研究。E-mail: " }, { "name": "text", "data": "hzhang@szu.edu.cn" } ] ] } ], "email": "hzhang@szu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "崔", "givenname": "艳霞", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CUI", "givenname": "Yan-xia", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor3", "lang": "en", "text": "yanxiacui@tyut.edu.cn", "data": [ { "name": "text", "data": "yanxiacui@tyut.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "崔艳霞(1984-)，女，山西吕梁人，博士，教授，博士生导师，2011年于南京理工大学获得博士学位，主要从事微纳光子与光电子学领域(包括表面等离激元纳米器件、有机及钙钛矿光电探测器及钙钛矿激光器等)的研究。E-mail: yanxiacui@tyut.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020086&type=", "small": 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"label": "2", "text": "中国地质大学(武汉)　材料与化学学院，湖北　武汉　430074", "data": [ { "name": "text", "data": "中国地质大学(武汉)　材料与化学学院，湖北　武汉　430074" } ] }, { "lang": "en", "label": "2", "text": "College of Materials and Chemistry, China University of Geosciences(Wuhan), Wuhan 430074, China", "data": [ { "name": "text", "data": "College of Materials and Chemistry, China University of Geosciences(Wuhan), Wuhan 430074, China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "深圳大学　微纳光电子学研究院，广东　深圳　518060", "data": [ { "name": "text", "data": "深圳大学　微纳光电子学研究院，广东　深圳　518060" } ] }, { "lang": "en", "label": "3", "text": "Institute of Micro/Nano Optoelectronics, Shenzhen University, Shenzhen 518060, China", "data": [ { "name": "text", "data": "Institute of Micro/Nano Optoelectronics, Shenzhen University, Shenzhen 518060, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "快速响应光电探测器在光通信、高速摄影、生物医学成像等领域有广泛的需求。目前，市场上应用的快速响应光电探测器大多基于硅、砷化镓等传统的无机半导体材料，但是其制作工艺复杂、成本较高，并且机械灵活性差。以石墨烯、二硫化钼为代表的二维材料具有独特的层状结构以及良好的光学、电学、热学和机械特性，是制备光电探测器的理想材料。尤其是部分二维材料所拥有的超高载流子迁移率特性，十分适用于研制快速响应光电探测器。近年来，一系列基于二维材料的金属-半导体-金属结构光电探测器（Metal-semiconductor-metal photodetectors，MSM-PDs）被陆续报道，很多具有1 μs以下的快速响应特性。本文以基于二维材料的快速响应MSM-PDs为主题进行综述。首先介绍了MSM-PDs中的基本结构及工作原理，深入剖析了决定其响应速度的主要因素。随后介绍了石墨烯、过渡金属硫化物、黑磷、二维钙钛矿、三元硒氧铋等二维材料的分子结构、光学、电学等特性，并对各类二维材料在MSM-PDs的应用进行对比。然后分类介绍了响应速度在1 μs以下的欧姆接触型、肖特基接触型以及基于表面等离激元效应二维材料MSM-PDs的研究进展。最后总结全文，并对二维材料在快速响应光电探测器中的应用前景及发展趋势进行了展望。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Fast response photodetectors are widely used in optical communication, high-speed photography, biomedical imaging and other fields. Most of the fast response photodetectors used in the market are based on traditional inorganic semiconductor materials such as silicon and gallium arsenide, but their fabrication process is complex, the cost is high, and the mechanical flexibility is poor. Two-dimensional materials, such as graphene and molybdenum disulfide, due to their unique layered structure and good optical, electrical, thermal and mechanical properties, are ideal materials for fabricating photodetectors. In particular, two-dimensional materials with ultra-high carrier mobilities are very suitable for developing fast response photodetectors. In recent years, a series of metal-semiconductor-metal photodetectors(MSM-PDs) based on two-dimensional materials have been reported, and their response time is often less than 1 μs. In this paper, rapid response two-dimensional materials based MSM-PDs are reviewed. Firstly, the basic structure and working principle of MSM-PDs are introduced, and the main factors that determine the response speed of MSM-PD are given. Then, the molecular structure, optical and electrical properties of graphene, transition metal sulfide, black phosphorus, two-dimensional perovskite and other two-dimensional materials are introduced. After that, research progress of Ohmic-contact type, Schottky-contact type and surface plasmon polarization enhanced MSM-PDs with the response time less than 1 μs is given. Finally, we summarize the full text, and prospect the application and development trend of two-dimensional materials in rapid response photodetectors." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "光电探测器" } ], [ { "name": "text", "data": "快速响应" } ], [ { "name": "text", "data": "二维材料" } ], [ { "name": "text", "data": "石墨烯" } ], [ { "name": "text", "data": "过渡金属硫化物" } ], [ { "name": "text", "data": "黑磷" } ], [ { "name": "text", "data": "二维钙钛矿" } ], [ { "name": "text", "data": "金属-半导体-金属" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "photodetectors" } ], [ { "name": "text", "data": "fast response" } ], [ { "name": "text", "data": "two-dimensional materials" } ], [ { "name": "text", "data": "graphene" } ], [ { "name": "text", "data": "transition metal sulfide" } ], [ { "name": "text", "data": "black phosphorus" } ], [ { "name": "text", "data": "two-dimensional perovskites" } ], [ { "name": "text", "data": "metal-semiconductor-metal" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "光电探测器是一种将光信号转化为电信号的器件，被广泛应用于导弹制导、环境监测、图像传感、工业控制、光通信、红外测量等领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。响应时间是衡量光电探测器性能的一个重要参数，它描述了光电探测器随输入光信号变化做出响应的速度。上升时间和下降时间被定义为光电流从稳定光电流值的10%(90%)上升(下降)到90%(10%)所需的时间" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。快速响应光电探测器在光通信、高速摄影、生物医学成像等领域有广泛的需求。市场上应用的快速响应光电探测器大多基于硅、砷化镓等传统的无机半导体材料。虽然传统无机半导体材料具有载流子迁移率高等优点，可以实现光电探测器的快速响应，但其存在制作工艺复杂、成本较高并且机械灵活性差等缺点。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "随着生产生活的不断发展，人们对于光电探测器在成本、检测速度以及柔韧性、透明性等方面都有了更高的要求" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。以石墨烯、过渡金属硫化物、黑磷为代表的层状结构二维材料不仅具有良好的光学、电学、热学和机械特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而且生产成本较低，在开发低成本、高性能光电探测器方面有着巨大潜力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R6", "R7", "R8" ], "text": "6-8", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。值得注意的是，很多二维材料拥有超高的载流子迁移率，部分二维材料的载流子迁移率可以达到10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，是制备快速响应光电探测器的理想材料，可满足高速集成数据通信" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "、国家安全、新型生物医学" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } } ], "rid": [ "R11", "R12" ], "text": "11-12", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "、太赫兹成像" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "等领域日益增长的需求。近年来，一系列基于二维材料的光电探测器陆续被报道。这些二维材料光电探测器的响应速度可以达到微秒、纳秒甚至皮秒量级" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R14", "R15", "R16", "R17" ], "text": "14-17", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。光电探测器的结构多样，其中金属-半导体-金属结构光电探测器(Meal-semiconductor-metal photodetectors,MSM-PDs)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } } ], "rid": [ "R18", "R19", "R20" ], "text": "18-20", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "具有响应速度快、响应度高等特性，引起了人们的广泛关注。此外，它们的制作工艺相对简单，易于工业化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文围绕快速响应二维材料MSM-PDs展开综述。首先，介绍MSM-PDs的基本结构与工作原理，指出影响MSM-PDs响应速度的主要因素。接着，介绍几种用于开发快速响应光电探测器的二维材料的基本特性，主要包括石墨烯、过渡金属硫化物、黑磷、二维钙钛矿等。随后，详细介绍响应速度在1 μs以下的欧姆接触型、肖特基接触型以及基于表面等离激元效应二维材料快速响应MSM-PDs的研究进展。最后，对快速响应二维材料光电探测器未来的发展进行展望。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "MSM-PDs基本结构与工作原理" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "MSM-PDs基本结构" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "MSM-PDs通常由两个金属半导体接触组成，可分为平面结构和垂直结构两大类，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。在平面结构的MSM-PDs中，电极位于半导体层的同一侧 (" }, { "name": "xref", "data": { "text": "图1(a)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(a)" } ] } }, { "name": "text", "data": ")。而在垂直结构的器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "中，电极位于半导体层的两侧，如" }, { "name": "xref", "data": { "text": "图1(b)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(b)" } ] } }, { "name": "text", "data": "所示。这两种结构的器件分别被称为平面MSM-PDs和垂直MSM-PDs。平面MSM-PDs制备工艺简单，外量子效率和响应度较高，但其暗电流较大。在垂直MSM-PDs中，器件顶部的金属电极必须足够薄，以使光能够进入到中间半导体层中。在制备垂直MSM-PDs时，有时会添加缓冲层，以保证光吸收层晶体的质量，同时缓冲层的加入可以降低暗电流。垂直MSM-PDs中电极之间的距离易于控制，有利于减小器件的寄生电容，同时电极之间的距离可以更短，从而减小载流子的渡越时间，因此其响应速度可以更快。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "(a)具有叉指电极的平面MSM-PD示意图；(b)具有普通电极的垂直MSM-PD示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "(a)Schematic diagram of the planar MSM-PD with interdigital metal strip electrodes. (b)Schematic diagram of vertical MSM-PD with common metal electrodes." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020095&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020108&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020107&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "MSM-PDs工作原理" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "金属电极与半导体材料之间形成的接触包括肖特基接触和欧姆接触两种。对于MSM-PDs，当金属-半导体界面的一边形成欧姆接触，另一边形成肖特基接触时，构成金属-半导体二极管型光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，它们具有单向导通特性。鉴于二维材料MSM-PDs大多具有对称的接触特性，本文不对具有二极管特性的MSM-PDs进行详细介绍。而具有对称接触的MSM-PDs主要包括肖特基接触型MSM-PDs和欧姆接触型MSM-PDs，我们将介绍这两种类型MSM-PDs在暗态以及亮态下的工作原理。" } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2.1" } ], "title": [ { "name": "text", "data": "肖特基接触型MSM-PDs暗态电流电压特性" } ], "level": "3", "id": "s2b1" } }, { "name": "p", "data": [ { "name": "text", "data": "肖特基接触型MSM-PDs在金属-半导体界面的两边形成了肖特基接触，由两个背靠背的金属-半导体肖特基二极管组成" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。与二极管型光电探测器(5.2 × 10" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": " A) " }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "相比，肖特基接触型MSM-PDs具有更低的暗电流(6.4 × 10" }, { "name": "sup", "data": [ { "name": "text", "data": "-13" } ] }, { "name": "text", "data": " A)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这是因为两个肖特基势垒比一个肖特基势垒对电流的阻碍更大。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "1971年，Sze等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "解释了肖特基接触型MSM-PDs在无光照条件下的基本工作原理。例如，N型硅的肖特基接触型MSM-PDs可等效于两个具有肖特基接触的二极管，如" }, { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "所示。该器件的半导体区包括两个肖特基结的耗尽区和一段用平坦能带表示的中性区，其中中性区的载流子浓度高于耗尽区。假设肖特基结两端的电子势垒高度不同，分别用" }, { "name": "italic", "data": [ { "name": "text", "data": "ϕ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": " 和" }, { "name": "italic", "data": [ { "name": "text", "data": "ϕ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "表示，它们的电场方向相反。左边肖特基结形成的电场方向从右向左，右边肖特基结形成的电场方向从左向右。这两个电场的分布如" }, { "name": "xref", "data": { "text": "图2(f)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(f)" } ] } }, { "name": "text", "data": "所示，相应耗尽区的宽度分别用" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": " 和 " }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "表示。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "(a)~(e)MSM结构在不同偏压下的能带图；(f)~(j)相应的电场分布图。(a)、(f)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "=0 V;(b)、(g)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "<" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RT" } ] }, { "name": "text", "data": ";(c)、(h)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RT" } ] }, { "name": "text", "data": ";(d)、(i)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "FB" } ] }, { "name": "text", "data": ";(e)、(j)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "FB" } ] }, { "name": "text", "data": "≤" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "≤" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "Energy band((a)-(e)) and electric field distribution((f)-(j)) diagrams of a typical MSM structure. (a),(f)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "=0 V. (b), (g)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "<" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RT" } ] }, { "name": "text", "data": ". (c),(h)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RT" } ] }, { "name": "text", "data": ". (d), (i)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "FB" } ] }, { "name": "text", "data": ". (e), (j)" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "FB" } ] }, { "name": "text", "data": "≤" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "≤" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020098&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020109&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020099&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "当施加不同的偏压时，器件的工作方式不同。" }, { "name": "xref", "data": { "text": "图2(b)、(g)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)、(g)" } ] } }, { "name": "text", "data": "分别给出了该器件在小反向偏压下的能带结构和电场分布。此时，左边肖特基结的耗尽区变宽，而右边肖特基结的耗尽区变窄。随着反向偏压的增大，左边肖特基结的耗尽区宽度继续增大，而右边肖特基结的耗尽区宽度继续减小。当施加的偏压达到阈值电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RT" } ] }, { "name": "text", "data": ")时，左边肖特基结与右边肖特基结的耗尽区相接，如" }, { "name": "xref", "data": { "text": "图2(h)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(h)" } ] } }, { "name": "text", "data": "所示。此时，两个耗尽区接触处的电场为零，" }, { "name": "xref", "data": { "text": "图2(c)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(c)" } ] } }, { "name": "text", "data": "为其能带结构。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "当进一步增大反向偏压时，阻挡空穴进入右侧电极的势垒不断降低，导致暗电流升高，直至右侧的耗尽区完全消失，如" }, { "name": "xref", "data": { "text": "图2(d)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(d)" } ] } }, { "name": "text", "data": "所示，半导体最右侧的能带变平坦。相应的偏压被定义为平带电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "FB" } ] }, { "name": "text", "data": ")。可见，此时整个器件都在反向偏压下工作，耗尽区的宽度等于两个金属电极之间的间距。在从右向左方向的电场下，强度从右到左线性增加，如" }, { "name": "xref", "data": { "text": "图2(i)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(i)" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "当外加偏压进一步增大时，由于镜像力的作用，空穴势垒只会缓慢减小，因此电流增长速度明显慢于" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "RT" } ] }, { "name": "text", "data": " " }, { "name": "text", "data": "<" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "<" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "FB" } ] }, { "name": "text", "data": "的情况。进一步增加外加偏压会导致器件击穿，相应的偏压被定义为击穿电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": ")。当" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "FB" } ] }, { "name": "text", "data": "<" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "text", "data": "<" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "时，器件的能带结构和电场分布分别如" }, { "name": "xref", "data": { "text": "图2(e)、(j)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(e)、(j)" } ] } }, { "name": "text", "data": "所示。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2.2" } ], "title": [ { "name": "text", "data": "肖特基接触型MSM-PDs亮态电流电压特性" } ], "level": "3", "id": "s2b2" } }, { "name": "p", "data": [ { "name": "text", "data": "大多数肖特基接触型MSM-PDs使用半导体材料来吸光。当右边肖特基结存在时，如" }, { "name": "xref", "data": { "text": "图2(a)~(c)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)~(c)" } ] } }, { "name": "text", "data": "所示，位于两个肖特基结中的半导体吸光。当光子产生的电势与肖特基结内建电势相反时，两个肖特基结中的光电流向相反的方向移动。当器件仅包含一个肖特基结(" }, { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "FB" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "" }, { "name": "text", "data": "1)。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.3" } ], "title": [ { "name": "text", "data": "影响MSM-PDs响应速度的因素" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "光电探测器的响应速度是其在光通信和高速图像传感中实际应用的重要参数之一。光电探测器的响应速度越快，其响应带宽越宽。对于肖特基接触型MSM-PDs，影响其响应速度的因素主要分为两部分：第一是RC时间常数；第二是载流子的渡越时间。而对于欧姆接触型MSM-PDs，除了RC时间常数与载流子渡越时间这两个因素以外，载流子寿命也会影响器件的响应速度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "MSM-PDs的响应速度与RC时间常数" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "有关。在如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示的基本MSM-PDs器件结构中，" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "l" } ] }, { "name": "text", "data": "分别为金属电极的宽度、间距、厚度和长度，" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "N" } ] }, { "name": "text", "data": "分别为有源层的厚度和杂质浓度。考虑有" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "个叉指电极条，则其电极间的总电容为：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020130&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020132&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020141&type=" } } } ], "id": "DF2" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为单位面积电容，取" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020143&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020151&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020145&type=" } } } ], "id": "DF3" } }, { "name": "text", "data": "其电极总电阻为：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020147&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020157&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020165&type=" } } } ], "id": "DF4" } }, { "name": "text", "data": "所以，由总电容电阻引起的RC时间常数" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "为：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(5)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020167&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020160&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020171&type=" } } } ], "id": "DF5" } }, { "name": "text", "data": "其次，影响MSM-PDs响应速度的第二个因素是载流子的渡越时间" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(6)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020180&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020176&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020194&type=" } } } ], "id": "DF6" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "v" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "s" } ] }, { "name": "text", "data": "为载流子(电子和空穴)漂移速度。接着引入下列电子漂移速度" }, { "name": "italic", "data": [ { "name": "text", "data": "v" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "和空穴漂移速度" }, { "name": "italic", "data": [ { "name": "text", "data": "v" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "的近似公式：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(7)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020185&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020197&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020190&type=" } } } ], "id": "DF7" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(8)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020208&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020205&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020214&type=" } } } ], "id": "DF8" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "no" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "po" } ] }, { "name": "text", "data": "分别为电子、空穴的低场迁移率；" }, { "name": "italic", "data": [ { "name": "text", "data": "υ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ns" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "υ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ps" } ] }, { "name": "text", "data": "为电子、空穴的饱和速率；" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "text", "data": "为临界电场。在中等电场下，电子的迁移率大于空穴的迁移率，因此载流子的渡越时间由空穴漂移速度" }, { "name": "italic", "data": [ { "name": "text", "data": "v" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "决定。通常载流子的漂移速度总是小于其热运动速度，当电场足够高时，载流子漂移速度最大也只能接近于热运动速度。从以上基本方程出发，载流子的渡越时间受到电场强度、载流子迁移率的影响。器件电场强度越高、载流子迁移率越高，MSM-PDs的响应时间越快。对于同一种感光半导体材料，单晶比多晶缺陷少，晶体质量更高，因此单晶材料的载流子迁移率通常高于多晶材料的载流子迁移率，相应的MSM-PDs的响应速度也更快。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "平面结构MSM-PDs的结构参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "Parameters of planar MSM-PDs" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020224&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020231&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020226&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "对于肖特基接触型MSM-PDs，其响应速度只与RC时间常数" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "、载流子的渡越时间" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "有关，其总的时间常数" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "text", "data": "由下列公式给出：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(9)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020233&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020244&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020237&type=" } } } ], "id": "DF9" } }, { "name": "text", "data": "可见，载流子渡越时间与叉指电极间距" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "成正比，间距" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "越近，响应时间越短。而电极间距" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "及电极厚度" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "与电路RC时间常数" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "成反比。电极间距" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "越小或电极厚度" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "text", "data": "越小，" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "则越大，响应速度越快。对于垂直结构的器件，两个电极之间的距离越短，载流子渡越时间越小，响应速度越快。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "对于欧姆接触型MSM-PDs，其响应速度除了与RC时间常数、载流子的渡越时间有关，还与载流子寿命有关。对于具有增益特性的欧姆接触型MSM-PDs，其少数载流子寿命远小于渡越时间，因此器件的总时间常数" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "text", "data": "由RC时间常数与少数载流子寿命共同决定。而随着电场强度的增加，载流子迁移率会提高，器件增益特性逐渐消失。此时，器件的响应速度与肖特基接触型MSM-PDs的类似，由RC时间常数与载流子渡越时间共同决定。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "二维材料及其特性" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "二维材料是一种具有原子级厚度的层状材料，层之间通过弱的范德华力相互作用连接，在平面内原子通过离子键或共价键紧密结合在一起。以石墨烯、过渡金属硫化物、黑磷、二维钙钛矿等为代表的二维材料具有良好的光学、电学、热学以及机械特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "35", "type": "bibr", "rid": "R35", "data": [ { "name": "text", "data": "35" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "40", "type": "bibr", "rid": "R40", "data": [ { "name": "text", "data": "40" } ] } } ], "rid": [ "R35", "R36", "R37", "R38", "R39", "R40" ], "text": "35-40", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。尤其是部分二维材料所拥有的超高载流子迁移率特性，使其成为一种极具潜力的光电材料，十分适用于研制快速响应光电探测器。另外，二维材料的层状结构相对稳定，一定程度上可以对器件起到保护作用，为研制稳定型光电探测器提供了新选择。本节将对二维材料的特性分类进行介绍。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "石墨烯是一种由碳原子紧密堆积而成的具有蜂窝状晶格结构的二维材料。层中的每个碳原子以sp" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "杂化方式与三个相邻的碳原子以共价键的形式连接，在分子结构上呈现平面规则的六边形蜂窝结构；同时，另一个未成键的单电子在垂直于平面的方向上形成π键，如" }, { "name": "xref", "data": { "text": "图6(a)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(a)" } ] } }, { "name": "text", "data": "所示。这种连接方式决定了由石墨烯组成的平面六角晶格具有极高的强度和导热性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "42", "type": "bibr", "rid": "R42", "data": [ { "name": "text", "data": "42" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "44", "type": "bibr", "rid": "R44", "data": [ { "name": "text", "data": "44" } ] } } ], "rid": [ "R42", "R43", "R44" ], "text": "42-44", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，独特的电子价键结构是石墨烯良好导电性和载流子迁移率的根本原因(电子和空穴迁移率都超过10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "45", "type": "bibr", "rid": "R45", "data": [ { "name": "text", "data": "45" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "49", "type": "bibr", "rid": "R49", "data": [ { "name": "text", "data": "49" } ] } } ], "rid": [ "R45", "R46", "R47", "R48", "R49" ], "text": "45-49", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。高载流子迁移率使得入射光子能够超快地产生电流或电压" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "50", "type": "bibr", "rid": "R50", "data": [ { "name": "text", "data": "50" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "51", "type": "bibr", "rid": "R51", "data": [ { "name": "text", "data": "51" } ] } } ], "rid": [ "R50", "R51" ], "text": "50-51", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，使其成为极具竞争力的快速响应光电探测器材料。石墨烯可以采用机械剥离法、化学气相沉积法、氧化还原法等方法制备" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "52", "type": "bibr", "rid": "R52", "data": [ { "name": "text", "data": "52" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "(a)石墨烯结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(b)MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(c)层状黑磷晶体结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(d)二维层状钙钛矿到三维钙钛矿结构示意图(" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "=1,2,3)" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(e)二维Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "(a)The schematic layered structures of graphene" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "41", "type": "bibr", "rid": "R41", "data": [ { "name": "text", "data": "41" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (b)The schematic layered structures of MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[41]" } ] }, { "name": "text", "data": ". (c)Layered black phosphorus crystal structure" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "57", "type": "bibr", "rid": "R57", "data": [ { "name": "text", "data": "57" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (d)The schematic layered structures of perovskites from 2D to 3D" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "70", "type": "bibr", "rid": "R70", "data": [ { "name": "text", "data": "70" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (e)The schematic layered structures of 2D Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020248&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020268&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020250&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "除了优良的电学性质之外，石墨烯的光学性能也非常优秀。在可见光范围内，石墨烯的光反射很弱。单层的石墨烯能吸收2.3%的垂直入射光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "53", "type": "bibr", "rid": "R53", "data": [ { "name": "text", "data": "53" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，在可见光和红外光中都有吸收。石墨烯的宽吸收窗口特性使其在紫外、可见、短波红外、近红外、中红外、远红外和太赫兹光谱区均具有响应。石墨烯光电探测器在高速光通信、互连、太赫兹检测、成像、遥感、监视和光谱学等方面有广泛的应用。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "过渡金属硫化物的化学式为" }, { "name": "italic", "data": [ { "name": "text", "data": "MX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "text", "data": "是第4~10族的过渡金属元素，" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "是硫族元素。在单分子膜中，结构呈" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "的形式，金属原子夹在两个硫族原子之间。对于块状材料，相邻层之间通过弱的范德华力连接。因此可以采用剥离法制备过渡金属硫化物，也可采用化学气相沉积法制备大面积过渡金属硫化物。常见的过渡金属硫化物有二硫化钼(MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")、二硫化钨(WS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")等，" }, { "name": "xref", "data": { "text": "图6(b)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(b)" } ] } }, { "name": "text", "data": "是MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的结构示意图。过渡金属硫化物在纳米级光电子学、自旋电子学等领域具有广泛应用。据Zhang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "54", "type": "bibr", "rid": "R54", "data": [ { "name": "text", "data": "54" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "计算，过渡金属硫化物载流子迁移率超过2 000 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，这一特性使其成为制备快速响应光电探测器的热门材料。金属原子及其配位环境的多样性使得过渡金属硫化物的能带具有结构多样性。厚度对过渡金属硫化物的能带结构具有决定性作用，当块状材料厚度减小为单层或少层时，其与多层材料的电子性能有很大不同。与石墨烯不同，二维过渡金属硫化物材料如 MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、二硒化钼(MoSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")、WS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "、二硒化钨(WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")、二硫化铼(ReS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")，不具有零带隙结构，并且其带隙大小可随厚度变化而变化。以MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "为例，当厚度从块体减小到单层时，其带隙结构从间接带隙 (1.2 eV) 变为直接带隙 (1.8 eV)。这种带隙与可见光和近红外光的光子能量相匹配，因此可以直接用于可见光和近红外光的检测。此外，更高的带隙可以获得更低的暗电流，因此可以实现高开/关比" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "55", "type": "bibr", "rid": "R55", "data": [ { "name": "text", "data": "55" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "黑磷由磷原子的波纹六边形晶格组成，原子层之间依靠范德华力结合在一起，各个原子层之间相隔约0.5 nm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "56", "type": "bibr", "rid": "R56", "data": [ { "name": "text", "data": "56" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图6(c)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(c)" } ] } }, { "name": "text", "data": "所示。在白磷、黑磷和无定形红磷中，黑磷是磷元素最稳定的同素异形体。1914年，Bridgman等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "58", "type": "bibr", "rid": "R58", "data": [ { "name": "text", "data": "58" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "第一次制备出黑磷。这一材料的成功制备对太阳能采集和通信领域有重大意义" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "59", "type": "bibr", "rid": "R59", "data": [ { "name": "text", "data": "59" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，弥补了中红外至近红外之间的带隙空缺。Peng等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "60", "type": "bibr", "rid": "R60", "data": [ { "name": "text", "data": "60" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "61", "type": "bibr", "rid": "R61", "data": [ { "name": "text", "data": "61" } ] } } ], "rid": [ "R60", "R61" ], "text": "60-61", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "通过密度泛函理论和第一性原理计算发现，单层黑磷的带隙通过单轴应力可实现直接到间接、间接再到直接的转变。块状黑磷的带隙大小为0.3 eV，随着层数减少，黑磷的带隙逐渐增加，单层黑磷的带隙增加至1.7 eV，表明黑磷的能级结构具有可调节特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "62", "type": "bibr", "rid": "R62", "data": [ { "name": "text", "data": "62" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随后Qiao等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "63", "type": "bibr", "rid": "R63", "data": [ { "name": "text", "data": "63" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过理论证明黑磷的载流子迁移率高达1 000 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[64-65]" } ] }, { "name": "text", "data": "，并具有传输各向异性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "64", "type": "bibr", "rid": "R64", "data": [ { "name": "text", "data": "64" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "66", "type": "bibr", "rid": "R66", "data": [ { "name": "text", "data": "66" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "和厚度依赖性。目前基于黑磷光电探测器的主要问题是采取剥离法制备的黑磷片会快速降解到环境中(水分、氧气)，对器件的稳定性造成困扰。为了提高效率和降低成本，气相沉积法也被广泛应用于制备黑磷" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "67", "type": "bibr", "rid": "R67", "data": [ { "name": "text", "data": "67" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "钙钛矿是指一类组成结构为" }, { "name": "italic", "data": [ { "name": "text", "data": "ABX" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的天然矿物质，于1839年首次被人类发现，并于19世纪由俄罗斯矿物科学家L. A. Perovski对其命名。二维钙钛矿是一种集合了二维材料层状结构和钙钛矿优势的半导体材料，其分子通式可表示为(RNH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "n" } ] } ] }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "+1" } ] }, { "name": "text", "data": "，其中RNH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "代表长链的有机阳离子，" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "代表短链的有机阳离子，" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "代表二价金属阳离子，" }, { "name": "italic", "data": [ { "name": "text", "data": "X" } ] }, { "name": "text", "data": "代表卤素阴离子，" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "代表了两层有机链RNH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "之间金属阳离子的数目。当" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "=1时体系为最简单的纯二维钙钛矿结构" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "68", "type": "bibr", "rid": "R68", "data": [ { "name": "text", "data": "68" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "69", "type": "bibr", "rid": "R69", "data": [ { "name": "text", "data": "69" } ] } } ], "rid": [ "R68", "R69" ], "text": "68-69", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "，当" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "=∞时体系为三维钙钛矿结构，如" }, { "name": "xref", "data": { "text": "图6(d)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(d)" } ] } }, { "name": "text", "data": "所示。在二维钙钛矿中，无机钙钛矿层(阱)和有机间隔层(势垒)交替排列，这种结构可抑制暗电流。同时，二维钙钛矿在可见光波段具有较强的光吸收能力，吸收系数高达10" }, { "name": "sup", "data": [ { "name": "text", "data": "5" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。二维钙钛矿通常采用溶液法制备，其中包括旋涂法，该方法成本低且工艺简单。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "硒氧铋(Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se)是一种层状氧硒化物，由交替堆叠的Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和Se层组成，层厚为0.61 nm，如" }, { "name": "xref", "data": { "text": "图6(e)", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6(e)" } ] } }, { "name": "text", "data": "所示。其带隙约为0.8 eV，相对电子有效质量约0.14" }, { "name": "italic", "data": [ { "name": "text", "data": "m" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "0" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[72]" } ] }, { "name": "text", "data": "。Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se的空穴迁移率大于20 000 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。由于其高的迁移率、良好的环境稳定性及良好的柔韧性，Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se在未来的低成本红外成像、高速、柔性光电子器件领域具有广阔发展前景" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "73", "type": "bibr", "rid": "R73", "data": [ { "name": "text", "data": "73" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。常见的剥离法不利于制备少层Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se，研究者通常采用化学气相沉积法制备该材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "74", "type": "bibr", "rid": "R74", "data": [ { "name": "text", "data": "74" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，且可以通过温度调节层数。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "基于快速响应二维材料的MSM-PDs研究进展" } ], "level": "1", "id": "s4" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4.1" } ], "title": [ { "name": "text", "data": "肖特基接触型MSM-PDs" } ], "level": "2", "id": "s4a" } }, { "name": "p", "data": [ { "name": "text", "data": "决定肖特基接触型MSM-PDs响应时间的因素分别是RC时间常数" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "和载流子的渡越时间" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "。近几年来，研究人员利用不同方法实现了肖特基接触型MSM-PDs的快速响应。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "首先，减小电极间距可以提高器件的响应速度。电极间距离越近，载流子渡越时间越短，器件的响应速度越快。2019年，Maeso等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "75", "type": "bibr", "rid": "R75", "data": [ { "name": "text", "data": "75" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将几层MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "纳米片堆叠制备了具有Au/MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Au结构的垂直型MSM-PD。该器件响应时间为60 ns，响应度为0.11 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。由于器件为垂直结构，电极之间的距离可以保持在几纳米范围内，从而大大减少光生载流子的收集时间并提高器件的效率。这种垂直结构有利于加快器件的响应速度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "其次，晶体质量越高，表面缺陷越少，载流子的渡越时间越短，响应速度越快。例如，2017年，Xu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用极性溶剂有效去除了化学气相沉积石墨烯(Fluorine functionalized chemical vapor deposited graphene,FG)中的氟，避免了传统的氧等离子刻蚀，得到了高质量表面，并制备了结构为平面结构的MSM-PD，如" }, { "name": "xref", "data": { "text": "图7(a)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)" } ] } }, { "name": "text", "data": "所示，器件的响应时间小于10 ns。与传统的等离子体刻蚀“硬图案化”方法相比，这种使用溶剂“软图案化”的方法使其能够选择性地去氟，得到高质量的表面，对实现快速响应非常关键。2019年，Han等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "制作了基于(PA)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(FA)Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "(简称为EFA，其中PA为正戊基胺，FA为甲脒)结构为Au/EFA/Au的二维钙钛矿MSM-PD，如" }, { "name": "xref", "data": { "text": "图7(b)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(b)" } ] } }, { "name": "text", "data": "所示。他们首先利用冷却结晶法获得单晶钙钛矿晶体，然后将该晶体溶于溶剂中并旋涂形成钙钛矿薄膜，通过原子力显微镜观察发现，沉积在石英衬底上的低缺陷红色透明薄膜表面均匀，且没有任何可见的针孔。该器件的响应时间为2.54 ns，如" }, { "name": "xref", "data": { "text": "图7(c)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(c)" } ] } }, { "name": "text", "data": "所示。同时，该薄膜显示出平行于2D无机钙钛矿层的完美取向。这种高度取向的薄膜非常有利于载流子在无机层内的传输，是获得快速响应的关键。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "(a)具有横向图案的石墨烯光电探测器示意图、光学图像和照片" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(b)基于二维钙钛矿薄膜的光电探测器示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(c)Mo-MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-Mo 光电探测器的瞬态光电流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(d)Mo-MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-Mo 光电探测器的3D示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "(a)Schematics, optical images, and photographs of a graphene photodetector array with transverse pattern" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "76", "type": "bibr", "rid": "R76", "data": [ { "name": "text", "data": "76" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (b)Schematic illustration of the photodetector based on perovskite thin film" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (c)Rise and fall time of Mo-MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-Mo photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "77", "type": "bibr", "rid": "R77", "data": [ { "name": "text", "data": "77" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (d)3D schematic of Mo-MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-Mo photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020272&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020275&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020273&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "除了上述方法之外，还可以通过半导体与金属电极直接自然成键，近一步减小载流子渡越过程中的阻碍，从而获得高速响应的MSM-PDs。2017年，Khadka等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "78", "type": "bibr", "rid": "R78", "data": [ { "name": "text", "data": "78" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "制备了结构为Mo/MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Mo的MSM-PDs，如" }, { "name": "xref", "data": { "text": "图7(d)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(d)" } ] } }, { "name": "text", "data": "所示。其响应时间快至微秒量级。研究者首先通过光刻金属图案，接着采用气相沉积法直接在该图案上生长二维材料，使生长单层至几层的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "同时与Mo电极自然连接。研究者认为该器件具有优异性能的原因可能是电极和半导体之间自然形成的接触使得金属和半导体之间的隧道势垒减小。这是由于电极和二维材料之间直接成键，而不是依靠传统的范德瓦尔斯键。这种低缺陷有利于载流子的传输和器件的快速响应。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4.2" } ], "title": [ { "name": "text", "data": "欧姆接触型MSM-PDs" } ], "level": "2", "id": "s4b" } }, { "name": "p", "data": [ { "name": "text", "data": "影响欧姆接触型MSM-PDs响应时间的因素包括RC时间常数" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "、载流子的渡越时间" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "以及载流子寿命，研究者们通过调控这些影响因素，实现了一系列快速响应欧姆接触型MSM-PDs。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "首先，为了提升MSM-PD响应速度，可以采取降低电极接触电阻、减小器件电容的方法来降低" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "。例如，2014年，Daniel等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "79", "type": "bibr", "rid": "R79", "data": [ { "name": "text", "data": "79" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "基于化学气相沉积法制备了结构为Ni/Al/Graphene/Ni/Al的石墨烯MSM-PD，其3 dB响应带宽为43 GHz。该器件的总电阻低至187 Ω，这种低电阻结构使得器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "τ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "减小，最终带来了皮秒级的响应速度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "其次，通过提高载流子传输速度也可达到缩短载流子渡越时间的目的。提高载流子传输速度的方法有：使用高载流子迁移率的材料、建立器件的内部电场、减少载流子传输界面的陷阱、提高载流子传输界面的质量等。二维材料凭借其超高的载流子迁移率成为了制备快速响应MSM-PDs的理想材料。2018年，Yin等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "71", "type": "bibr", "rid": "R71", "data": [ { "name": "text", "data": "71" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用化学气相沉积法制备了具有2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "·V" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "·s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[71]" } ] }, { "name": "text", "data": "高迁移率的Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se，并制备了结构为Ti/Au/Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se/Ti/Au的MSM-PD，获得了1 ps的超快响应速度。这种高迁移率材料使光载流子快速漂移出金属/Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se结，光生载流子在器件中的收集时间减少，提高了响应速度。此外，该器件在1 200 nm处显示出65 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的响应度，如此优异的性能表明Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se是一种有潜力的红外光电探测器材料。2021年，Chen等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "在云母基底上生长Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se纳米片，并制备了从红外到太赫兹波段结构为Cr/Au/Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se/Cr/Au的MSM-PD。该器件在太赫兹波段的响应时间为476 ns，器件结构如" }, { "name": "xref", "data": { "text": "图8(a)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(a)" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "(a)Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se光电探测器示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(b)杂化石墨烯光电探测器结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(c)杂化石墨烯光电探测器响应时间的上升沿" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(d)平面阵列光电探测器的瞬态光电流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(e)(" }, { "name": "italic", "data": [ { "name": "text", "data": "PA" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": ")Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "的二维钙钛矿结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(f)石墨烯光电探测器结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 8" } ], "title": [ { "name": "text", "data": "(a)Schematic of the Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "80", "type": "bibr", "rid": "R80", "data": [ { "name": "text", "data": "80" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (b)Structure diagram of hybrid graphene photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (c)The rising edge of the response time of the hybrid graphene photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (d)Transient photocurrent traces of the planar array photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (e)The 2D bilayered perovskite structure of (" }, { "name": "italic", "data": [ { "name": "text", "data": "PA" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": ")Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "[83]" } ] }, { "name": "text", "data": ".(f)Structure diagram of graphene photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020283&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020289&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020285&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "与肖特基接触MSM-PDs相同，通过建立内建电场也能够提升欧姆接触型二维材料MSM-PDs的快速响应性能。例如，2013年，Gan等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "81", "type": "bibr", "rid": "R81", "data": [ { "name": "text", "data": "81" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "制备了结构为Au/Graphene/Au的集成波导型MSM-PDs，其响应速度达到皮秒量级。在零偏置电压下，该器件沿着金属/石墨烯边界产生两个光电流很高的区域，这表明在金属电极-石墨烯界面附近形成了内建电场，这些内部电场可以加速载流子的传输速度，使器件有超过20 GHz的响应带宽。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "提高界面质量、减少界面陷阱，也是加快MSM-PDs响应时间的一种方法。杂化石墨烯光电导探测器已经实现了优异的光响应，但是由于界面处被俘获的载流子寿命长，其响应速度急剧下降。2017年，Tao等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "82", "type": "bibr", "rid": "R82", "data": [ { "name": "text", "data": "82" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "通过将大面积原子级厚度MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜嵌入到杂化石墨烯光电导光电探测器中，制备了结构为Au/MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Graphene/Au的MSM-PD，如" }, { "name": "xref", "data": { "text": "图8(b)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(b)" } ] } }, { "name": "text", "data": "所示。该器件的响应速度达到了17 ns，如" }, { "name": "xref", "data": { "text": "图8(c)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(c)" } ] } }, { "name": "text", "data": "所示。在该器件中，MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜不仅用作隧道层，而且还可以钝化表面，降低缺陷态密度，将响应速度提高了三个量级。2019年，Xu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "83", "type": "bibr", "rid": "R83", "data": [ { "name": "text", "data": "83" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "利用降温结晶法生长了高质量的(" }, { "name": "italic", "data": [ { "name": "text", "data": "PA" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": ")Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "(其中" }, { "name": "italic", "data": [ { "name": "text", "data": "PA" } ] }, { "name": "text", "data": "=n-戊基氨基，" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": "=胍基)的晶体，并制备了基于(" }, { "name": "italic", "data": [ { "name": "text", "data": "PA" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": ")Pb" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "I" }, { "name": "sub", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "的二维钙钛矿晶体的光电探测器。优异的晶体表面质量使该器件的响应时间快至3.1 ns，如" }, { "name": "xref", "data": { "text": "图8(d)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(d)" } ] } }, { "name": "text", "data": "所示。该晶体引入了大尺寸的" }, { "name": "italic", "data": [ { "name": "text", "data": "G" } ] }, { "name": "text", "data": "阳离子，合成了新的钙钛矿双层排列，如" }, { "name": "xref", "data": { "text": "图8(e)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(e)" } ] } }, { "name": "text", "data": "所示。以上两种MSM-PDs所采用的高质量薄膜材料都为载流子的快速漂移提供了有利条件。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "最后，与肖特基接触型MSM-PDs不同的是，影响欧姆接触型MSM-PDs响应时间的因素还有载流子寿命。二维材料与常规半导体相比，其载流子寿命很短(几十皮秒)。早在2011年，Urich等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "84", "type": "bibr", "rid": "R84", "data": [ { "name": "text", "data": "84" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "制备了结构为Ti/Au/Graphene/Ti/Au的MSM-PD，如" }, { "name": "xref", "data": { "text": "图8(f)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(f)" } ] } }, { "name": "text", "data": "所示，其最短响应时间为2.1 ps。研究者认为在载流子离开石墨烯/金属界面区域之前，很大一部分光生载流子已经复合。在高迁移率器件中，载流子渡越时间可能变得与复合时间一样小，甚至更小，并且内部量子效率可能达到100%。所以，光生载流子的短寿命导致基于石墨烯MSM-PDs的固有响应时间短。同样，2015年，Wang等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "85", "type": "bibr", "rid": "R85", "data": [ { "name": "text", "data": "85" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "报道了由于MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电子、空穴和激子的寿命短，结构为Au/Cr/MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/Au/Cr的MSM-PD的固有响应时间短至3 ps。2017年，Youngblood等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "86", "type": "bibr", "rid": "R86", "data": [ { "name": "text", "data": "86" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "研究了氮化硼钝化黑磷光电探测器的固有响应时间。他们的研究表明小偏压下器件的响应速度由光生载流子的寿命决定，当偏压增大时，载流子寿命减小。研究者使用超快泵浦探针测量器件的响应时间为380 ps。此外，研究者采用氮化硼对器件进行封装，氮化硼既能钝化又能提供高质量的衬底，这对减少响应时间也有帮助。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4.3" } ], "title": [ { "name": "text", "data": "基于表面等离激元效应的MSM-PDs" } ], "level": "2", "id": "s4c" } }, { "name": "p", "data": [ { "name": "text", "data": "在光电探测器中引入表面等离激元共振效应可以增强局域电场，增加器件对入射光的吸收，产生更多的空穴和电子，并促进载流子向电极的传输，从而提高器件的响应度，同时缩短载流子的渡越时间，提高器件的响应速度。金、银、铂等贵金属材料均能满足激发表面等离激元共振效应的条件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "-94］" } ] }, { "name": "text", "data": "。例如，2017年，Chen等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "87", "type": "bibr", "rid": "R87", "data": [ { "name": "text", "data": "87" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将三角形的金纳米颗粒引入石墨烯光电探测器中，如" }, { "name": "xref", "data": { "text": "图9(a)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(a)" } ] } }, { "name": "text", "data": "所示。由于表面等离激元效应增强了光吸收，器件的光电流和响应度均提高了近10倍，在1 550 nm处的响应度达到83 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。同时，该器件上升时间小于600 ns，如" }, { "name": "xref", "data": { "text": "图9(b)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(b)" } ] } }, { "name": "text", "data": "所示，原因是石墨烯与硅异质结之间形成的内建电场加速了电子与空穴的分离，加快了器件的响应速度。2018年，Hu等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将铂纳米颗粒引入石墨烯/硅光电探测器中，器件结构如" }, { "name": "xref", "data": { "text": "图9(c)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(c)" } ] } }, { "name": "text", "data": "所示。由于光吸收及内建电场的增强，器件的响应度提高了一个量级，达到1.68×10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": " A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。同时，由于有效的载流子抽取及界面处低的陷阱态密度，器件的响应时间达到180 ns，如" }, { "name": "xref", "data": { "text": "图9(d)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(d)" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "(a)加入金纳米颗粒的石墨烯光电探测器示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "87", "type": "bibr", "rid": "R87", "data": [ { "name": "text", "data": "87" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(b)石墨烯光电探测器瞬态响应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "87", "type": "bibr", "rid": "R87", "data": [ { "name": "text", "data": "87" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(c)加入铂纳米颗粒的石墨烯/硅光电探测器结构示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(d)532 nm激光照射下石墨烯/硅光电探测器的瞬态响应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(e)表面等离激元波导集成石墨烯光电探测器三维示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "89", "type": "bibr", "rid": "R89", "data": [ { "name": "text", "data": "89" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(f)石墨烯-等离激元集成光电探测器示意图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "90", "type": "bibr", "rid": "R90", "data": [ { "name": "text", "data": "90" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 9" } ], "title": [ { "name": "text", "data": "(a)Schematic diagram of graphene photodetector with Au nanoparticles" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "87", "type": "bibr", "rid": "R87", "data": [ { "name": "text", "data": "87" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (b)Transient response of graphene photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "87", "type": "bibr", "rid": "R87", "data": [ { "name": "text", "data": "87" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (c)Schematic diagram of graphene/Si photodetector with Pt nanoparticles" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (d)Transient response of graphene/Si photodetectors under 532 nm laser illuminating" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "88", "type": "bibr", "rid": "R88", "data": [ { "name": "text", "data": "88" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (e)Three-dimensional schematic of the plasmonic enhanced waveguide-integrated graphene photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "89", "type": "bibr", "rid": "R89", "data": [ { "name": "text", "data": "89" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ". (f)Schematic diagram of graphene-plasmon integrated photodetector" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "90", "type": "bibr", "rid": "R90", "data": [ { "name": "text", "data": "90" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020293&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020314&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020301&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "此外，表面等离激元效应也被用于波导型光电探测器中，在提高响应度的同时，保持器件的高速响应。2018年，Ma等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "89", "type": "bibr", "rid": "R89", "data": [ { "name": "text", "data": "89" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "将阵列型蝶形金属纳米结构引入波导型石墨烯光电探测器中，器件结构如" }, { "name": "xref", "data": { "text": "图9(e)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(e)" } ] } }, { "name": "text", "data": "所示。该器件具有0.5 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的响应度和超过110 GHz的带宽。金属纳米颗粒激发了表面等离激元效应，增强了面内电场强度，增强了光吸收，改变了石墨烯层内的电导率，从而提高了响应度。在该器件中，光生载流子的漂移路径非常短，从而使得器件的响应带宽很宽。2019年，Ding等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "90", "type": "bibr", "rid": "R90", "data": [ { "name": "text", "data": "90" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "报道了一种基于表面等离激元的超小型波导缝隙石墨烯MSM-PD，该器件具有超过110 GHz的带宽和0.36 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "的响应度。表面等离激元波导缝隙由两个不对称的Au(90 nm)/Pd和Au(90 nm)/Ti金属电极组成，电极之间的距离为120 nm，如此短的距离使得光生载流子的漂移路径很短，如" }, { "name": "xref", "data": { "text": "图9(f)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(f)" } ] } }, { "name": "text", "data": "所示。在该器件中，表面等离激元效应将光局域在纳米尺度内，增强了石墨烯与光的相互作用，提高了响应度。另外，在120 nm的整个沟道内都存在内建电场，因此光生载流子可以有效分离，进一步提高了响应度，同时提高了器件的响应速度。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为了更好地反映基于二维材料快速响应MSM -PDs的研究进展，本文列举了一些光电探测器的性能，如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示，其中给出了器件结构、响应时间、带宽、外量子效率、响应度、探测率等性能。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "基于二维材料的快速响应MSM-PDs性能总结" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "Summary of fast response MSM-PDs based on two-dimensional materials" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": " " } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Device structure　" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Response speed" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Bandwidth/GHz" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": 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"尽管快速响应二维材料光电探测器具有许多优异的性能，显示出广阔的应用前景，例如宽带检测、高灵敏度检测、弱光检测、超快检测、偏振敏感光检测、高数据速率空间通信、空间分辨光电成像、太赫兹检测等。然而，二维材料的研究还面临着诸多挑战。虽然通过机械剥离的方法可以得到大部分的二维层状材料，但是这种方法制备的样品横向尺寸较小且效率较低下。通过其他方法例如液相剥离或者化学气相沉积法可以制备石墨烯和部分过渡金属硫化物，但样品的层数、边缘形貌、缺陷密度等参数都较难控制。因此，发展新的可以大面积制备高质量二维材料的方法迫在眉睫。另外，二维材料的转移方法也有待进一步优化。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "二维材料的家族还很丰富，尤其像三元二维硒氧铋材料还有很大的发展空间，其高载流子迁移率和稳定性使其成为制备快速响应光电探测器极具竞争力的材料。因此，我们相信这些快速响应二维材料MSM-PDs将在消费电子产品中得到应用，能够满足在非常高性能的科学设备中的应用要求。因此，要实现二维材料MSM-PDs的广泛应用，进一步优化二维材料的制备方法及器件结构，充分发挥二维材料的独特优势，是这一领域未来发展的方向。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220024." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献：" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHENG Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Opt. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "3" }, { "name": "text", "data": "(" }, { "name": "text", "data": "9" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1207" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1214" }, { "name": "text", "data": "." } ], "title": "High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode" } ] }, { "id": "R2", "label": "[2]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "李家意" }, { "name": "text", "data": ", " }, { "name": "text", "data": "丁一" }, { "name": "text", "data": ", " }, { "name": "text", "data": "张卫" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "基于二维材料及其范德瓦尔斯异质结的光电探测器" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "物理化学学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "35" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1058" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1077" }, { "name": "text", "data": "." } ], "title": "基于二维材料及其范德瓦尔斯异质结的光电探测器" }, { "lang": "en", "text": [ { "name": "text", "data": "LI J Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "DING Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG D W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Photodetectors based on two-dimensional materials and their van der Waals heterostructures" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Acta Phys.-Chim. Sinica" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "35" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1058" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1077" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Photodetectors based on two-dimensional materials and their van der Waals heterostructures" } ] }, { "id": "R3", "label": "[3]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG Z X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YIN L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "2D library beyond graphene and transition metal dichalcogenides:a focus on photodetection" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chem. Soc. Rev." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "47" }, { "name": "text", "data": "(" }, { "name": "text", "data": "16" }, { "name": "text", "data": "): " }, { "name": "text", "data": "6296" }, { "name": "text", "data": "-" }, { "name": "text", "data": "6341" }, { "name": "text", "data": "." } ], "title": "2D library beyond graphene and transition metal dichalcogenides:a focus on photodetection" } ] }, { "id": "R4", "label": "[4]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "FERRARI A C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BONACCORSO F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "FAL'KO V" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nanoscale" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "7" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "4598" }, { "name": "text", "data": "-" }, { "name": "text", "data": "4810" }, { "name": "text", "data": "." } ], "title": "Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems" } ] }, { "id": "R5", "label": "[5]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG X G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI M M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Recent progress in organometal halide perovskite photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Org. Electron." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "52" }, { "name": "text", "data": ": " }, { "name": "text", "data": "172" }, { "name": "text", "data": "-" }, { "name": "text", "data": "183" }, { "name": "text", "data": "." } ], "title": "Recent progress in organometal halide perovskite photodetectors" } ] }, { "id": "R6", "label": "[6]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "黄彦民" }, { "name": "text", "data": ", " }, { "name": "text", "data": "袁明鉴" }, { "name": "text", "data": ", " }, { "name": "text", "data": "李玉良" }, { "name": "text", "data": ". " }, { "name": "text", "data": "二维半导体材料与器件——从传统二维光电材料到石墨炔" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "无机化学学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "33" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1914" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1936" }, { "name": "text", "data": "." } ], "title": "二维半导体材料与器件——从传统二维光电材料到石墨炔" }, { "lang": "en", "text": [ { "name": "text", "data": "HUANG Y M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YUAN M J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI Y L" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Two-dimensional semiconducting materials and devices:from traditional two-dimensional optoelectronic materials to graphdiyne" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Inorg. Chem." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "33" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1914" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1936" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Two-dimensional semiconducting materials and devices:from traditional two-dimensional optoelectronic materials to graphdiyne" } ] }, { "id": "R7", "label": "[7]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "张恒康" }, { "name": "text", "data": ", " }, { "name": "text", "data": "冀婷" }, { "name": "text", "data": ", " }, { "name": "text", "data": "李国辉" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "二维材料光电探测器的研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "半导体技术" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "45" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "43" }, { "name": "text", "data": "-" }, { "name": "text", "data": "51" }, { "name": "text", "data": "." } ], "title": "二维材料光电探测器的研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHANG H K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JI T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI G H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Research progress of photodetectors based on two-dimensional material" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Semicond. Technol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "45" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "43" }, { "name": "text", "data": "-" }, { "name": "text", "data": "51" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Research progress of photodetectors based on two-dimensional material" } ] }, { "id": "R8", "label": "[8]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "夏风梁" }, { "name": "text", "data": ", " }, { "name": "text", "data": "石凯熙" }, { "name": "text", "data": ", " }, { "name": "text", "data": "赵东旭" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "二维WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "场效应晶体管光电性能" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "42" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "): " }, { "name": "text", "data": "257" }, { "name": "text", "data": "-" }, { "name": "text", "data": "263" }, { "name": "text", "data": "." } ], "title": "二维WSe2场效应晶体管光电性能" }, { "lang": "en", "text": [ { "name": "text", "data": "XIA F L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHI K X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHAO D X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optoelectronic performance of 2D WSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " field effect transistor" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Lumin." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "42" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "): " }, { "name": "text", "data": "257" }, { "name": "text", "data": "-" }, { "name": "text", "data": "263" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Optoelectronic performance of 2D WSe2 field effect transistor" } ] }, { "id": "R9", "label": "[9]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG Y X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WU W D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHAO Z R" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Recent progress and remaining challenges of 2D material-based terahertz detectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Infrared Phys. Technol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "102" }, { "name": "text", "data": ": " }, { "name": "text", "data": "103024-1-14" }, { "name": "text", "data": "." } ], "title": "Recent progress and remaining challenges of 2D material-based terahertz detectors" } ] }, { "id": "R10", "label": "[10]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "NIU Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JIN D P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "A survey of millimeter wave communications(mm Wave) for 5G:opportunities and challenges" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Wirel. Netw." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "21" }, { "name": "text", "data": "(" }, { "name": "text", "data": "8" }, { "name": "text", "data": "): " }, { "name": "text", "data": "2657" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2676" }, { "name": "text", "data": "." } ], "title": "A survey of millimeter wave communications(mm Wave) for 5G:opportunities and challenges" } ] }, { "id": "R11", "label": "[11]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GONG A P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "QIU Y T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN X W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Biomedical applications of terahertz technology" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Spectrosc. Rev." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "55" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "): " }, { "name": "text", "data": "418" }, { "name": "text", "data": "-" }, { "name": "text", "data": "438" }, { "name": "text", "data": "." } ], "title": "Biomedical applications of terahertz technology" } ] }, { "id": "R12", "label": "[12]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHONG S P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG Z B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Broadband photodetectors based on 2D group IV" }, { "name": "sub", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": " metal chalcogenides semiconductors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Mater. Today" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "15" }, { "name": "text", "data": ": " }, { "name": "text", "data": "115" }, { "name": "text", "data": "-" }, { "name": "text", "data": "138" }, { "name": "text", "data": "." } ], "title": "Broadband photodetectors based on 2D group IVA metal chalcogenides semiconductors" } ] }, { "id": "R13", "label": "[13]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU H B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHONG H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KARPOWICZ N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Terahertz spectroscopy and imaging for defense and security applications" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Proc. IEEE" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2007" }, { "name": "text", "data": ", " }, { "name": "text", "data": "95" }, { "name": "text", "data": "(" }, { "name": "text", "data": "8" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1514" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1527" }, { "name": "text", "data": "." } ], "title": "Terahertz spectroscopy and imaging for defense and security applications" } ] }, { "id": "R14", "label": "[14]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DAI M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ultrafast and sensitive self-powered photodetector featuring self-limited depletion region and fully depleted channel with van der Waals contacts" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Acs Nano" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "14" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7" }, { "name": "text", "data": "): " }, { "name": "text", "data": "9098" }, { "name": "text", "data": "-" }, { "name": "text", "data": "9106" } ], "title": "Ultrafast and sensitive self-powered photodetector featuring self-limited depletion region and fully depleted channel with van der Waals contacts" } ] }, { "id": "R15", "label": "[15]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "杨珏晗" }, { "name": "text", "data": ", " }, { "name": "text", "data": "魏钟鸣" }, { "name": "text", "data": ", " }, { "name": "text", "data": "牛智川" }, { "name": "text", "data": ". " }, { "name": "text", "data": "基于二维材料异质结的光探测器研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "人工晶体学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "49" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "379" }, { "name": "text", "data": "-" }, { "name": "text", "data": "397" }, { "name": "text", "data": "." } ], "title": "基于二维材料异质结的光探测器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "YANG J H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WEI Z M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NIU Z C" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Recent progress on two-dimensional heterostructure based photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Synthet. Cryst." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "49" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "379" }, { "name": "text", "data": "-" }, { "name": "text", "data": "397" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Recent progress on two-dimensional heterostructure based photodetectors" } ] }, { "id": "R16", "label": "[16]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "孟宪成" }, { "name": "text", "data": ", " }, { "name": "text", "data": "田贺" }, { "name": "text", "data": ", " }, { "name": "text", "data": "安侠" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "基于二维材料二硒化锡场效应晶体管的光电探测器" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "物理学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "69" }, { "name": "text", "data": "(" }, { "name": "text", "data": "13" }, { "name": "text", "data": "): " }, { "name": "text", "data": "137801-1-7" }, { "name": "text", "data": "." } ], "title": "基于二维材料二硒化锡场效应晶体管的光电探测器" }, { "lang": "en", "text": [ { "name": "text", "data": "MENG X C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TIAN H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "AN X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Field effect transistor photodetector based on two dimensional SnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Acta Phys. Sinica" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "69" }, { "name": "text", "data": "(" }, { "name": "text", "data": "13" }, { "name": "text", "data": "): " }, { "name": "text", "data": "137801-1-7" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Field effect transistor photodetector based on two dimensional SnSe2" } ] }, { "id": "R17", "label": "[17]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "徐春燕" }, { "name": "text", "data": ", " }, { "name": "text", "data": "南海燕" }, { "name": "text", "data": ", " }, { "name": "text", "data": "肖少庆" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "基于二维半导体材料光电器件的研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "电子与封装" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "21" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "030401-1-15" }, { "name": "text", "data": "." } ], "title": "基于二维半导体材料光电器件的研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "XU C Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NAN H Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XIAO S Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Research progress of photoelectric devices based on 2D semiconductor materials" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Electron. Packag." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "21" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "030401-1-15" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Research progress of photoelectric devices based on 2D semiconductor materials" } ] }, { "id": "R18", "label": "[18]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SMITH F W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LE H Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "DIADIUK V" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Picosecond GaAs-based photoconductive optoelectronic detectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Phys. Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "1989" }, { "name": "text", "data": ", " }, { "name": "text", "data": "54" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "): " }, { "name": "text", "data": "890" }, { "name": "text", "data": "-" }, { "name": "text", "data": "890" }, { "name": "text", "data": "." } ], "title": "Picosecond GaAs-based photoconductive optoelectronic detectors" } ] }, { "id": "R19", "label": "[19]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WILLIAMSON S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BROCK T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "375-GHz-bandwidth photoconductive detector" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Phys. Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "1991" }, { "name": "text", "data": ", " }, { "name": "text", "data": "59" }, { "name": "text", "data": "(" }, { "name": "text", "data": "16" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1984" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1986" }, { "name": "text", "data": "." } ], "title": "375-GHz-bandwidth photoconductive detector" } ] }, { "id": "R20", "label": "[20]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TIAN W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIAO M Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Recent advances in solution-processed inorganic nanofilm photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chem. Soc. Rev." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "43" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1400" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1422" }, { "name": "text", "data": "." } ], "title": "Recent advances in solution-processed inorganic nanofilm photodetectors" } ] }, { "id": "R21", "label": "[21]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WU K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHAN Y H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Sci. Rep." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "5" }, { "name": "text", "data": ": " }, { "name": "text", "data": "14304-1-3" }, { "name": "text", "data": "." } ], "title": "Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application" } ] }, { "id": "R22", "label": "[22]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHUAH L S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HASSAN Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HASSAN H A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Barrier height enhanced Gan Schottky diodes using a thin ALN surface layer" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Int. J. Mod. Phys." } ] }, { "name": "text", "data": " B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2008" }, { "name": "text", "data": ", " }, { "name": "text", "data": "22" }, { "name": "text", "data": "(" }, { "name": "text", "data": "29" }, { "name": "text", "data": "): " }, { "name": "text", "data": "5167" }, { "name": "text", "data": "-" }, { "name": "text", "data": "5173" }, { "name": "text", "data": "." } ], "title": "Barrier height enhanced Gan Schottky diodes using a thin ALN surface layer" } ] }, { "id": "R23", "label": "[23]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SUGETA T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "URISU T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SAKATA S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Metal-semiconductor-metal photodetector for high-speed optoelectronic circuits" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Jpn. J. Appl. Phys." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "1980" }, { "name": "text", "data": ", " }, { "name": "text", "data": "19" }, { "name": "text", "data": "(" }, { "name": "text", "data": "S1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "459" }, { "name": "text", "data": "-" }, { "name": "text", "data": "464" }, { "name": "text", "data": "." } ], "title": "Metal-semiconductor-metal photodetector for high-speed optoelectronic circuits" } ] }, { "id": "R24", "label": "[24]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MUHAMMAD Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MUNIR T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NASEEM S" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Electrical and optical transient behavior of " }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "-GaN metal-semiconductor-metal (MSM) photodetector" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Energy Environ. Focus" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2013" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "222" }, { "name": "text", "data": "-" }, { "name": "text", "data": "226" }, { "name": "text", "data": "." } ], "title": "Electrical and optical transient behavior of n-GaN metal-semiconductor-metal (MSM) photodetector" } ] }, { "id": "R25", "label": "[25]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SZE S M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JR" }, { "name": "text", "data": "COLEMAN D J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LOYA A" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Current transport in metal-semiconductor-metal(MSM) structures" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Solid-State Electron." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "1971" }, { "name": "text", "data": ", " }, { "name": "text", "data": "14" }, { "name": "text", "data": "(" }, { "name": "text", "data": "12" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1209" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1218" }, { "name": "text", "data": "." } ], "title": "Current transport in metal-semiconductor-metal(MSM) structures" } ] }, { "id": "R26", "label": "[26]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SCHUMACHER H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEBLANC H P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SOOLE J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "IEEE Electron Device Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "1988" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "607" }, { "name": "text", "data": "-" }, { "name": "text", "data": "609" }, { "name": "text", "data": "." } ], "title": "An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectors" } ] }, { "id": "R27", "label": "[27]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SOOLE J B D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SCHUMACHER H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ESAGUI R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Waveguide integrated MSM photodetector for the 1.3 μm-1.6 μm wavelength range" }, { "name": "text", "data": "[C]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Technical Digest" } ] }, { "name": "text", "data": "., " }, { "name": "italic", "data": [ { "name": "text", "data": "International Electron Devices Meeting" } ] }, { "name": "text", "data": ", " }, { "name": "italic", "data": [ { "name": "text", "data": "San Francisco" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "1988" }, { "name": "text", "data": ": " }, { "name": "text", "data": "483" }, { "name": "text", "data": "-" }, { "name": "text", "data": "486" }, { "name": "text", "data": "." } ], "title": "Waveguide integrated MSM photodetector for the 1.3 μm-1.6 μm wavelength range" } ] }, { "id": "R28", "label": "[28]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG Y P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "DENG W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG X J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "italic", "data": [ { "name": "text", "data": "In situ" } ] }, { "name": "text", "data": " integration of squaraine-nanowire-array-based Schottky-type photodetectors with enhanced switching performance" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Appl. Mater. Interfaces" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2013" }, { "name": "text", "data": ", " }, { "name": "text", "data": "5" }, { "name": "text", "data": "(" }, { "name": "text", "data": "23" }, { "name": "text", "data": "): " }, { "name": "text", "data": "12288" }, { "name": "text", "data": "-" }, { "name": "text", "data": "12294" }, { "name": "text", "data": "." } ], "title": "In situ integration of squaraine-nanowire-array-based Schottky-type photodetectors with enhanced switching performance" } ] }, { "id": "R29", "label": "[29]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SHI D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ADINOLFI V" }, { "name": "text", "data": ", " }, { "name": "text", "data": "COMIN R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Science" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "347" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6221" }, { "name": "text", "data": "): " }, { "name": "text", "data": "519" }, { "name": "text", "data": "-" }, { "name": "text", "data": "522" }, { "name": "text", "data": "." } ], "title": "Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals" } ] }, { "id": "R30", "label": "[30]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SAIDAMINOV M I" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ABDELHADY A L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MURALI B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-quality bulk hybrid perovskite single crystals within minutes by inverse temperature crystallization" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Commun." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": ": " }, { "name": "text", "data": "7586-1-6" }, { "name": "text", "data": "." } ], "title": "High-quality bulk hybrid perovskite single crystals within minutes by inverse temperature crystallization" } ] }, { "id": "R31", "label": "[31]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MACULAN G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHEIKH A D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ABDELHADY A L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "PbCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " single crystals:inverse temperature crystallization and visible-blind UV-photodetector" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Phys. Chem. Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": "(" }, { "name": "text", "data": "19" }, { "name": "text", "data": "): " }, { "name": "text", "data": "3781" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3786" }, { "name": "text", "data": "." } ], "title": "CH3NH3PbCl3 single crystals:inverse temperature crystallization and visible-blind UV-photodetector" } ] }, { "id": "R32", "label": "[32]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU Y C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SUN J K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YANG Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "20-mm-large single-crystalline formamidinium-perovskite wafer for mass production of integrated photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Opt. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ", " }, { "name": "text", "data": "4" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1829" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1837" }, { "name": "text", "data": "." } ], "title": "20-mm-large single-crystalline formamidinium-perovskite wafer for mass production of integrated photodetectors" } ] }, { "id": "R33", "label": "[33]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DUIJNSTEE E A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BALL J M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LE CORRE V M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Toward understanding space-charge limited current measurements on metal halide perovskites" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Energy Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "5" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "): " }, { "name": "text", "data": "376" }, { "name": "text", "data": "-" }, { "name": "text", "data": "384" }, { "name": "text", "data": "." } ], "title": "Toward understanding space-charge limited current measurements on metal halide perovskites" } ] }, { "id": "R34", "label": "[34]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SZE S M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NG K K" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Photodetectors and solar cells" }, { "name": "text", "data": "[M]. " }, { "name": "text", "data": "SZE S M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NG K K" }, { "name": "text", "data": ". " }, { "name": "italic", "data": [ { "name": "text", "data": "Physics of Semiconductor Devices" } ] }, { "name": "text", "data": ". " }, { "name": "text", "data": "Hoboken" }, { "name": "text", "data": ": " }, { "name": "text", "data": "John Wiley & Sons, Inc." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2007" }, { "name": "text", "data": ": " }, { "name": "text", "data": "663" }, { "name": "text", "data": "-" }, { "name": "text", "data": "742" }, { "name": "text", "data": "." } ], "title": "Photodetectors and solar cells" } ] }, { "id": "R35", "label": "[35]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "徐新龙" }, { "name": "text", "data": ", " }, { "name": "text", "data": "马菁瑶" }, { "name": "text", "data": ", " }, { "name": "text", "data": "卢春辉" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "基于二维层状半导体材料的光电极特性及其研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "西北大学学报(自然科学版)" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "50" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "360" }, { "name": "text", "data": "-" }, { "name": "text", "data": "376" }, { "name": "text", "data": "." } ], "title": "基于二维层状半导体材料的光电极特性及其研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "XU X L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MA J Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LU C H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Characteristics of photoelectrode based on two-dimensional layered semiconductor materials and its research progress" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Northwest Univ." } ] }, { "name": "text", "data": " (" }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Sci. Ed." } ] }, { "name": "text", "data": ")" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "50" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "360" }, { "name": "text", "data": "-" }, { "name": "text", "data": "376" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Characteristics of photoelectrode based on two-dimensional layered semiconductor materials and its research progress" } ] }, { "id": "R36", "label": "[36]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "尤凯熹" }, { "name": "text", "data": ", " }, { "name": "text", "data": "范涛健" }, { "name": "text", "data": ", " }, { "name": "text", "data": "葛颜绮" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "二维纳米材料黑磷的光电特性研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "物理学进展" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "38" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "): " }, { "name": "text", "data": "163" }, { "name": "text", "data": "-" }, { "name": "text", "data": "174" }, { "name": "text", "data": "." } ], "title": "二维纳米材料黑磷的光电特性研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "YOU K X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "FAN T J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GE Y Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "The research progress on photoelectric properties of two-dimensional nanomaterial black phosphorus" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Prog. Phys." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "38" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "): " }, { "name": "text", "data": "163" }, { "name": "text", "data": "-" }, { "name": "text", "data": "174" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "The research progress on photoelectric properties of two-dimensional nanomaterial black phosphorus" } ] }, { "id": "R37", "label": "[37]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "马雅婷" }, { "name": "text", "data": ", " }, { "name": "text", "data": "程湘爱" }, { "name": "text", "data": ". " }, { "name": "text", "data": "二维过渡金属硫族化合物的自旋-能谷特性研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "光电技术应用" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "35" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "): " }, { "name": "text", "data": "32" }, { "name": "text", "data": "-" }, { "name": "text", "data": "35" }, { "name": "text", "data": "." } ], "title": "二维过渡金属硫族化合物的自旋-能谷特性研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "MA Y T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHENG X A" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Spin-valley property of two-dimensional transition metal dichalcogenides" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Electro-Opt. Technol. Appl." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "35" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "): " }, { "name": "text", "data": "32" }, { "name": "text", "data": "-" }, { "name": "text", "data": "35" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Spin-valley property of two-dimensional transition metal dichalcogenides" } ] }, { "id": "R38", "label": "[38]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "张永哲" }, { "name": "text", "data": ", " }, { "name": "text", "data": "李松宇" }, { "name": "text", "data": ", " }, { "name": "text", "data": "陈小青" }, { "name": "text", "data": ". " }, { "name": "text", "data": "二维材料光子型光电探测器研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "北京工业大学学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "46" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1149" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1166" }, { "name": "text", "data": "." } ], "title": "二维材料光子型光电探测器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHANG Y Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI S Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN X Q" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Recent progress of two-dimensional material photodetectors based on photoelectronic conversion" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Beijing Univ. Technol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "46" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1149" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1166" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Recent progress of two-dimensional material photodetectors based on photoelectronic conversion" } ] }, { "id": "R39", "label": "[39]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "韩军凯" }, { "name": "text", "data": ", " }, { "name": "text", "data": "冯奕钰" }, { "name": "text", "data": ", " }, { "name": "text", "data": "李瑀" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "刺激响应型石墨烯材料的研究新进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "功能高分子学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "32" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "): " }, { "name": "text", "data": "411" }, { "name": "text", "data": "-" }, { "name": "text", "data": "420" }, { "name": "text", "data": "." } ], "title": "刺激响应型石墨烯材料的研究新进展" }, { "lang": "en", "text": [ { "name": "text", "data": "HAN J K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "FENG Y Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Recent research progress in stimuli-responsive graphene materials" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Funct. Polym." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "32" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "): " }, { "name": "text", "data": "411" }, { "name": "text", "data": "-" }, { "name": "text", "data": "420" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Recent research progress in stimuli-responsive graphene materials" } ] }, { "id": "R40", "label": "[40]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIANG Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHAO R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Application of organic-graphene hybrids in high performance photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Mater. Chem. Front." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "4" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "): " }, { "name": "text", "data": "354" }, { "name": "text", "data": "-" }, { "name": "text", "data": "368" }, { "name": "text", "data": "." } ], "title": "Application of organic-graphene hybrids in high performance photodetectors" } ] }, { "id": "R41", "label": "[41]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GUERRERO-BERMEA C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "RAJUKUMAR L P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "DASGUPTA A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Two-dimensional and three-dimensional hybrid assemblies based on graphene oxide and other layered structures:a carbon science perspective" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Carbon" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "125" }, { "name": "text", "data": ": " }, { "name": "text", "data": "437" }, { "name": "text", "data": "-" }, { "name": "text", "data": "453" }, { "name": "text", "data": "." } ], "title": "Two-dimensional and three-dimensional hybrid assemblies based on graphene oxide and other layered structures:a carbon science perspective" } ] }, { "id": "R42", "label": "[42]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "林源为" }, { "name": "text", "data": ", " }, { "name": "text", "data": "郭雪峰" }, { "name": "text", "data": ". " }, { "name": "text", "data": "石墨烯表界面化学修饰及其功能调控" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "化学学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "72" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "277" }, { "name": "text", "data": "-" }, { "name": "text", "data": "288" }, { "name": "text", "data": "." } ], "title": "石墨烯表界面化学修饰及其功能调控" }, { "lang": "en", "text": [ { "name": "text", "data": "LIN Y W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GUO X F" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Chemical modification of graphene and its applications" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Acta Chim. Sinica" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "72" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "277" }, { "name": "text", "data": "-" }, { "name": "text", "data": "288" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Chemical modification of graphene and its applications" } ] }, { "id": "R43", "label": "[43]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "周琳" }, { "name": "text", "data": ", " }, { "name": "text", "data": "张黎明" }, { "name": "text", "data": ", " }, { "name": "text", "data": "廖磊" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "石墨烯的光化学修饰方法" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "化学学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "72" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "289" }, { "name": "text", "data": "-" }, { "name": "text", "data": "300" }, { "name": "text", "data": "." } ], "title": "石墨烯的光化学修饰方法" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHOU L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG L M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIAO L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Photochemical modification of graphene" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Acta Chim. Sinica" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "72" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "289" }, { "name": "text", "data": "-" }, { "name": "text", "data": "300" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Photochemical modification of graphene" } ] }, { "id": "R44", "label": "[44]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "张芸秋" }, { "name": "text", "data": ", " }, { "name": "text", "data": "梁勇明" }, { "name": "text", "data": ", " }, { "name": "text", "data": "周建新" }, { "name": "text", "data": ". " }, { "name": "text", "data": "石墨烯掺杂的研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "化学学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "72" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "367" }, { "name": "text", "data": "-" }, { "name": "text", "data": "377" }, { "name": "text", "data": "." } ], "title": "石墨烯掺杂的研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHANG Y Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIANG Y M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHOU J X" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Recent progress of graphene doping" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Acta Chim. Sinica" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "72" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "367" }, { "name": "text", "data": "-" }, { "name": "text", "data": "377" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Recent progress of graphene doping" } ] }, { "id": "R45", "label": "[45]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "NOVOSELOV K S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GEIM A K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MOROZOV S V" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Electric field effect in atomically thin carbon films" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Science" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2004" }, { "name": "text", "data": ", " }, { "name": "text", "data": "306" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5696" }, { "name": "text", "data": "): " }, { "name": "text", "data": "666" }, { "name": "text", "data": "-" }, { "name": "text", "data": "669" }, { "name": "text", "data": "." } ], "title": "Electric field effect in atomically thin carbon films" } ] }, { "id": "R46", "label": "[46]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "NOVOSELOV K S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GEIM A K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MOROZOV S V" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Two-dimensional gas of massless Dirac fermions in graphene" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nature" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2005" }, { "name": "text", "data": ", " }, { "name": "text", "data": "438" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7065" }, { "name": "text", "data": "): " }, { "name": "text", "data": "197" }, { "name": "text", "data": "-" }, { "name": "text", "data": "200" }, { "name": "text", "data": "." } ], "title": "Two-dimensional gas of massless Dirac fermions in graphene" } ] }, { "id": "R47", "label": "[47]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG Y B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TAN Y W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "STORMER H L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Experimental observation of the quantum Hall effect and Berry's phase in graphene" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nature" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2005" }, { "name": "text", "data": ", " }, { "name": "text", "data": "438" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7065" }, { "name": "text", "data": "): " }, { "name": "text", "data": "201" }, { "name": "text", "data": "-" }, { "name": "text", "data": "204" }, { "name": "text", "data": "." } ], "title": "Experimental observation of the quantum Hall effect and Berry's phase in graphene" } ] }, { "id": "R48", "label": "[48]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "AVOURIS P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN Z H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "PEREBEINOS V" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Carbon-based electronics" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Nanotechnol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2007" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "): " }, { "name": "text", "data": "605" }, { "name": "text", "data": "-" }, { "name": "text", "data": "615" }, { "name": "text", "data": "." } ], "title": "Carbon-based electronics" } ] }, { "id": "R49", "label": "[49]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GEIM A K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NOVOSELOV K S" }, { "name": "text", "data": ". " }, { "name": "text", "data": "The rise of graphene" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2007" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "183" }, { "name": "text", "data": "-" }, { "name": "text", "data": "191" }, { "name": "text", "data": "." } ], "title": "The rise of graphene" } ] }, { "id": "R50", "label": "[50]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "XIA F N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MUELLER T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIN Y M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ultrafast graphene photodetector" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Nanotechnol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2009" }, { "name": "text", "data": ", " }, { "name": "text", "data": "4" }, { "name": "text", "data": "(" }, { "name": "text", "data": "12" }, { "name": "text", "data": "): " }, { "name": "text", "data": "839" }, { "name": "text", "data": "-" }, { "name": "text", "data": "843" }, { "name": "text", "data": "." } ], "title": "Ultrafast graphene photodetector" } ] }, { "id": "R51", "label": "[51]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MUELLER T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XIA F N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "AVOURIS P" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Graphene photodetectors for high-speed optical communications" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Photonics" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2010" }, { "name": "text", "data": ", " }, { "name": "text", "data": "4" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "): " }, { "name": "text", "data": "297" }, { "name": "text", "data": "-" }, { "name": "text", "data": "301" }, { "name": "text", "data": "." } ], "title": "Graphene photodetectors for high-speed optical communications" } ] }, { "id": "R52", "label": "[52]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "张伟娜" }, { "name": "text", "data": ", " }, { "name": "text", "data": "何伟" }, { "name": "text", "data": ", " }, { "name": "text", "data": "张新荔" }, { "name": "text", "data": ". " }, { "name": "text", "data": "石墨烯的制备方法及其应用特性" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "化工新型材料" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2010" }, { "name": "text", "data": ", " }, { "name": "text", "data": "38" }, { "name": "text", "data": "(" }, { "name": "text", "data": "S1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "15" }, { "name": "text", "data": "-" }, { "name": "text", "data": "18" }, { "name": "text", "data": "." } ], "title": "石墨烯的制备方法及其应用特性" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHANG W N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HE W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG X L" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Progress in synthese, property and application of graphene" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "New Chem. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2010" }, { "name": "text", "data": ", " }, { "name": "text", "data": "38" }, { "name": "text", "data": "(" }, { "name": "text", "data": "S1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "15" }, { "name": "text", "data": "-" }, { "name": "text", "data": "18" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Progress in synthese, property and application of graphene" } ] }, { "id": "R53", "label": "[53]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "NAIR R R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BLAKE P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GRIGORENKO A N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Fine structure constant defines visual transparency of graphene" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Science" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2008" }, { "name": "text", "data": ", " }, { "name": "text", "data": "320" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5881" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1308" }, { "name": "text", "data": "." } ], "title": "Fine structure constant defines visual transparency of graphene" } ] }, { "id": "R54", "label": "[54]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG W X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HUANG Z S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG W L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Two-dimensional semiconductors with possible high room temperature mobility" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nano Res." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "7" }, { "name": "text", "data": "(" }, { "name": "text", "data": "12" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1731" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1737" }, { "name": "text", "data": "." } ], "title": "Two-dimensional semiconductors with possible high room temperature mobility" } ] }, { "id": "R55", "label": "[55]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "EDA G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YAMAGUCHI H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "VOIRY D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Photoluminescence from chemically exfoliated MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nano Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2011" }, { "name": "text", "data": ", " }, { "name": "text", "data": "11" }, { "name": "text", "data": "(" }, { "name": "text", "data": "12" }, { "name": "text", "data": "): " }, { "name": "text", "data": "5111" }, { "name": "text", "data": "-" }, { "name": "text", "data": "5116" }, { "name": "text", "data": "." } ], "title": "Photoluminescence from chemically exfoliated MoS2" } ] }, { "id": "R56", "label": "[56]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG C D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIAN J C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YI W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Surface structures of black phosphorus investigated with scanning tunneling microscopy" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Phys. Chem." } ] }, { "name": "text", "data": " C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2009" }, { "name": "text", "data": ", " }, { "name": "text", "data": "113" }, { "name": "text", "data": "(" }, { "name": "text", "data": "43" }, { "name": "text", "data": "): " }, { "name": "text", "data": "18823" }, { "name": "text", "data": "-" }, { "name": "text", "data": "18826" }, { "name": "text", "data": "." } ], "title": "Surface structures of black phosphorus investigated with scanning tunneling microscopy" } ] }, { "id": "R57", "label": "[57]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NEAL A T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHU Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Phosphorene:an unexplored 2D semiconductor with a high hole mobility" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Nano" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "): " }, { "name": "text", "data": "4033" }, { "name": "text", "data": "-" }, { "name": "text", "data": "4041" }, { "name": "text", "data": "." } ], "title": "Phosphorene:an unexplored 2D semiconductor with a high hole mobility" } ] }, { "id": "R58", "label": "[58]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BRIDGMAN P W" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Two new modifications of phosphorus" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Am. Chem. Soc." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "1914" }, { "name": "text", "data": ", " }, { "name": "text", "data": "36" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1344" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1363" }, { "name": "text", "data": "." } ], "title": "Two new modifications of phosphorus" } ] }, { "id": "R59", "label": "[59]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHU Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XIE Z J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI J F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "From phosphorus to phosphorene:applications in disease theranostics" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Coordin. Chem. Rev." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "446" }, { "name": "text", "data": ": " }, { "name": "text", "data": "214110-1-16" }, { "name": "text", "data": "." } ], "title": "From phosphorus to phosphorene:applications in disease theranostics" } ] }, { "id": "R60", "label": "[60]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "袁振洲" }, { "name": "text", "data": ", " }, { "name": "text", "data": "刘丹敏" }, { "name": "text", "data": ", " }, { "name": "text", "data": "田楠" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "二维黑磷的结构、制备和性能" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "化学学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ", " }, { "name": "text", "data": "74" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "): " }, { "name": "text", "data": "488" }, { "name": "text", "data": "-" }, { "name": "text", "data": "497" }, { "name": "text", "data": "." } ], "title": "二维黑磷的结构、制备和性能" }, { "lang": "en", "text": [ { "name": "text", "data": "YUAN Z Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIU D M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TIAN N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Structure, preparation and properties of phosphorene" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Acta Chim. Sinica" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ", " }, { "name": "text", "data": "74" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "): " }, { "name": "text", "data": "488" }, { "name": "text", "data": "-" }, { "name": "text", "data": "497" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Structure, preparation and properties of phosphorene" } ] }, { "id": "R61", "label": "[61]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "PENG X H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WEI Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "COPPLE A" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Phys. Rev." } ] }, { "name": "text", "data": " B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "90" }, { "name": "text", "data": "(" }, { "name": "text", "data": "8" }, { "name": "text", "data": "): " }, { "name": "text", "data": "085402-1-10" }, { "name": "text", "data": "." } ], "title": "Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene" } ] }, { "id": "R62", "label": "[62]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NEAL A T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHU Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Phosphorene:an unexplored 2D semiconductor with a high hole mobility" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Nano" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "): " }, { "name": "text", "data": "4033" }, { "name": "text", "data": "-" }, { "name": "text", "data": "4041" }, { "name": "text", "data": "." } ], "title": "Phosphorene:an unexplored 2D semiconductor with a high hole mobility" } ] }, { "id": "R63", "label": "[63]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "QIAO J S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KONG X H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HU Z X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Commun." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "5" }, { "name": "text", "data": ": " }, { "name": "text", "data": "4475-1-7" }, { "name": "text", "data": "." } ], "title": "High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus" } ] }, { "id": "R64", "label": "[64]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG X M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JONES A M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SEYLER K L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly anisotropic and robust excitons in monolayer black phosphorus" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Nanotechnol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "10" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "): " }, { "name": "text", "data": "517" }, { "name": "text", "data": "-" }, { "name": "text", "data": "521" }, { "name": "text", "data": "." } ], "title": "Highly anisotropic and robust excitons in monolayer black phosphorus" } ] }, { "id": "R65", "label": "[65]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LI L K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YU Y J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YE G J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Black phosphorus field-effect transistors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Nanotechnol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "): " }, { "name": "text", "data": "372" }, { "name": "text", "data": "-" }, { "name": "text", "data": "377" }, { "name": "text", "data": "." } ], "title": "Black phosphorus field-effect transistors" } ] }, { "id": "R66", "label": "[66]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "LIU Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "RUDEN P P" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Temperature-dependent anisotropic charge-carrier mobility limited by ionized impurity scattering in thin-layer black phosphorus" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Phys. Rev." } ] }, { "name": "text", "data": " B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "95" }, { "name": "text", "data": "(" }, { "name": "text", "data": "16" }, { "name": "text", "data": "): " }, { "name": "text", "data": "165446-1-8" }, { "name": "text", "data": "." } ], "title": "Temperature-dependent anisotropic charge-carrier mobility limited by ionized impurity scattering in thin-layer black phosphorus" } ] }, { "id": "R67", "label": "[67]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "冯凯" }, { "name": "text", "data": ", " }, { "name": "text", "data": "冯琳" }, { "name": "text", "data": ", " }, { "name": "text", "data": "李国辉" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "黑磷二维材料制备及其光电子器件研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "42" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1686" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1700" }, { "name": "text", "data": "." } ], "title": "黑磷二维材料制备及其光电子器件研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "FENG K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "FENG L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI G H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Research progress on fabrication of thin black phosphorus materials and its optoelectronic devices" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Lumin." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "42" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1686" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1700" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Research progress on fabrication of thin black phosphorus materials and its optoelectronic devices" } ] }, { "id": "R68", "label": "[68]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "万静" }, { "name": "text", "data": ". " }, { "name": "text", "data": "有机/无机杂化钙钛矿(RNH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "NH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "m-" } ] }, { "name": "text", "data": "1" } ] }, { "name": "text", "data": "Pb" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "m" } ] } ] }, { "name": "text", "data": " " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020322&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020325&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020329&type=" } } } ] }, { "name": "text", "data": "结构及光电性能的研究" }, { "name": "text", "data": "[D]. " }, { "name": "text", "data": "杭州" }, { "name": "text", "data": ": " }, { "name": "text", "data": "浙江理工大学" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2012" }, { "name": "text", "data": "." } ], "title": "有机/无机杂化钙钛矿(RNH3)2(CH3NH3)m-1Pbm 结构及光电性能的研究" }, { "lang": "en", "text": [ { "name": "text", "data": "WAN J" }, { "name": "text", "data": ". " }, { "name": "italic", "data": [ { "name": "text", "data": "Structure and Optoelectrical Properties of Organic/Inorganic Hybrid Perovskite" } ] }, { "name": "text", "data": " (" }, { "name": "italic", "data": [ { "name": "text", "data": "RNH" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "CH" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "NH" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "m-" } ] }, { "name": "text", "data": "1" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "Pb" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "m" } ] } ] }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "3" }, { "name": "italic", "data": [ { "name": "text", "data": "m+" } ] }, { "name": "text", "data": "1" } ] }, { "name": "text", "data": "[D]. " }, { "name": "text", "data": "Hangzhou" }, { "name": "text", "data": ": " }, { "name": "text", "data": "Zhejiang Sci-Tech University" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2012" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Structure and Optoelectrical Properties of Organic/Inorganic Hybrid Perovskite (RNH3)2(CH3NH3)m-1PbmI3m+1" } ] }, { "id": "R69", "label": "[69]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "洪茂椿" }, { "name": "text", "data": ". " }, { "name": "text", "data": "无机-有机复合聚合物：材料研究的一个新领域" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "无机化学学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2002" }, { "name": "text", "data": ", " }, { "name": "text", "data": "18" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "24" }, { "name": "text", "data": "-" }, { "name": "text", "data": "26" }, { "name": "text", "data": "." } ], "title": "无机-有机复合聚合物：材料研究的一个新领域" }, { "lang": "en", "text": [ { "name": "text", "data": "HONG M C" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Inorganic and organic hybride polymers:a new opening for materials research" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Inorg. Chem." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2002" }, { "name": "text", "data": ", " }, { "name": "text", "data": "18" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "24" }, { "name": "text", "data": "-" }, { "name": "text", "data": "26" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Inorganic and organic hybride polymers:a new opening for materials research" } ] }, { "id": "R70", "label": "[70]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HE T W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JIANG Y Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XING X Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Structured perovskite light absorbers for efficient and stable photovoltaics" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "32" }, { "name": "text", "data": "(" }, { "name": "text", "data": "26" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1903937-1-17" }, { "name": "text", "data": "." } ], "title": "Structured perovskite light absorbers for efficient and stable photovoltaics" } ] }, { "id": "R71", "label": "[71]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YIN J B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TAN Z J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HONG H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Commun." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "3311-1-7" }, { "name": "text", "data": "." } ], "title": "Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals" } ] }, { "id": "R72", "label": "[72]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WU J X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YUAN H T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MENG M M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Nanotechnol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "12" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "): " }, { "name": "text", "data": "530" }, { "name": "text", "data": "-" }, { "name": "text", "data": "534" }, { "name": "text", "data": "." } ], "title": "High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se" } ] }, { "id": "R73", "label": "[73]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN Y F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MA W L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TAN C W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Broadband Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se photodetectors from infrared to terahertz" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Funct. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "31" }, { "name": "text", "data": "(" }, { "name": "text", "data": "14" }, { "name": "text", "data": "): " }, { "name": "text", "data": "2009554-1-9" }, { "name": "text", "data": "." } ], "title": "Broadband Bi2O2Se photodetectors from infrared to terahertz" } ] }, { "id": "R74", "label": "[74]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YANG J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "QUHE R G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI Q H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Sub 10 nm bilayer Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se transistors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Electron. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "5" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1800720-1-10" }, { "name": "text", "data": "." } ], "title": "Sub 10 nm bilayer Bi2O2Se transistors" } ] }, { "id": "R75", "label": "[75]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MAESO D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CASTELLANOS-GOMEZ A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "AGRAIT N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Fast yet quantum-efficient few-layer vertical MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Electron. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "5" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1900141-1-6" }, { "name": "text", "data": "." } ], "title": "Fast yet quantum-efficient few-layer vertical MoS2 photodetectors" } ] }, { "id": "R76", "label": "[76]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "XU Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ALI A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHEHZAD K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Solvent-based soft-patterning of graphene lateral heterostructures for broadband high-speed metal-semiconductor-metal photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Mater. Technol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1600241-1-8" }, { "name": "text", "data": "." } ], "title": "Solvent-based soft-patterning of graphene lateral heterostructures for broadband high-speed metal-semiconductor-metal photodetectors" } ] }, { "id": "R77", "label": "[77]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HAN S G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YAO Y P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIU X T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly oriented thin films of 2D ruddlesden-popper hybrid perovskite toward superfast response photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Small" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "15" }, { "name": "text", "data": "(" }, { "name": "text", "data": "39" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1901194-1-6" }, { "name": "text", "data": "." } ], "title": "Highly oriented thin films of 2D ruddlesden-popper hybrid perovskite toward superfast response photodetectors" } ] }, { "id": "R78", "label": "[78]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KHADKA S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WICKRAMASINGHE T E" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LINDQUIST M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "As-grown two-dimensional MoS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " based photodetectors with naturally formed contacts" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Phys. Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "110" }, { "name": "text", "data": "(" }, { "name": "text", "data": "26" }, { "name": "text", "data": "): " }, { "name": "text", "data": "261109-1-5" }, { "name": "text", "data": "." } ], "title": "As-grown two-dimensional MoS2 based photodetectors with naturally formed contacts" } ] }, { "id": "R79", "label": "[79]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SCHALL D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NEUMAIER D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MOHSIN M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "50 Gbit/s photodetectors based on wafer-scale graphene for integrated silicon photonic communication systems" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Photon." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "1" }, { "name": "text", "data": "(" }, { "name": "text", "data": "9" }, { "name": "text", "data": "): " }, { "name": "text", "data": "781" }, { "name": "text", "data": "-" }, { "name": "text", "data": "784" }, { "name": "text", "data": "." } ], "title": "50 Gbit/s photodetectors based on wafer-scale graphene for integrated silicon photonic communication systems" } ] }, { "id": "R80", "label": "[80]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN Y F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MA W L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TAN C W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Broadband Bi" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "Se photodetectors from infrared to terahertz" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Funct. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "31" }, { "name": "text", "data": "(" }, { "name": "text", "data": "14" }, { "name": "text", "data": "): " }, { "name": "text", "data": "2009554-1-9" }, { "name": "text", "data": "." } ], "title": "Broadband Bi2O2Se photodetectors from infrared to terahertz" } ] }, { "id": "R81", "label": "[81]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GAN X T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHIUE R J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GAO Y D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Chip-integrated ultrafast graphene photodetector with high responsivity" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Photonics" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2013" }, { "name": "text", "data": ", " }, { "name": "text", "data": "7" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "883" }, { "name": "text", "data": "-" }, { "name": "text", "data": "887" }, { "name": "text", "data": "." } ], "title": "Chip-integrated ultrafast graphene photodetector with high responsivity" } ] }, { "id": "R82", "label": "[82]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "TAO L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN Z F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI X M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "npj" } ] }, { "name": "text", "data": " 2" }, { "name": "italic", "data": [ { "name": "text", "data": "D Mater. Appl." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "1" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "19-1-8" }, { "name": "text", "data": "." } ], "title": "Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity" } ] }, { "id": "R83", "label": "[83]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "XU Z Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI Y B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIU X T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly sensitive and ultrafast responding array photodetector based on a newly tailored 2D lead iodide perovskite crystal" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Opt. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "7" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1900308-1-7" }, { "name": "text", "data": "." } ], "title": "Highly sensitive and ultrafast responding array photodetector based on a newly tailored 2D lead iodide perovskite crystal" } ] }, { "id": "R84", "label": "[84]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "URICH A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "UNTERRAINER K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MUELLER T" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Intrinsic response time of graphene photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nano Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2011" }, { "name": "text", "data": ", " }, { "name": "text", "data": "11" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7" }, { "name": "text", "data": "): " }, { "name": "text", "data": "2804" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2808" }, { "name": "text", "data": "." } ], "title": "Intrinsic response time of graphene photodetectors" } ] }, { "id": "R85", "label": "[85]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG H N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG C J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHAN W M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ultrafast response of monolayer molybdenum disulfide photodetectors" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Commun." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": ": " }, { "name": "text", "data": "8831-1-6" }, { "name": "text", "data": "." } ], "title": "Ultrafast response of monolayer molybdenum disulfide photodetectors" } ] }, { "id": "R86", "label": "[86]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YOUNGBLOOD N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI M" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ultrafast photocurrent measurements of a black phosphorus photodetector" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Phys. Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "110" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "): " }, { "name": "text", "data": "051102-1-5" }, { "name": "text", "data": "." } ], "title": "Ultrafast photocurrent measurements of a black phosphorus photodetector" } ] }, { "id": "R87", "label": "[87]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CHEN Z F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI X M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG J Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Synergistic effects of plasmonics and electron trapping in graphene short-wave infrared photodetectors with ultrahigh responsivity" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Nano" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "11" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "430" }, { "name": "text", "data": "-" }, { "name": "text", "data": "437" }, { "name": "text", "data": "." } ], "title": "Synergistic effects of plasmonics and electron trapping in graphene short-wave infrared photodetectors with ultrahigh responsivity" } ] }, { "id": "R88", "label": "[88]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HU M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YAN Y C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HUANG K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Performance improvement of graphene/silicon photodetectors using high work function metal nanoparticles with plasma effect" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Opt. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": "(" }, { "name": "text", "data": "9" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1701243-1-7" }, { "name": "text", "data": "." } ], "title": "Performance improvement of graphene/silicon photodetectors using high work function metal nanoparticles with plasma effect" } ] }, { "id": "R89", "label": "[89]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MA P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SALAMIN Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BAEUERLE B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Plasmonically enhanced graphene photodetector featuring 100 Gbit/s data reception, high responsivity, and compact size" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Photon." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "154" }, { "name": "text", "data": "-" }, { "name": "text", "data": "161" }, { "name": "text", "data": "." } ], "title": "Plasmonically enhanced graphene photodetector featuring 100 Gbit/s data reception, high responsivity, and compact size" } ] }, { "id": "R90", "label": "[90]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DING Y H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHENG Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHU X L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nanophotonics" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "): " }, { "name": "text", "data": "317" }, { "name": "text", "data": "-" }, { "name": "text", "data": "325" }, { "name": "text", "data": "." } ], "title": "Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20220024", "clc": [ [ { "name": "text", "data": "TN304;O482.31" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032(2022)05-0745-18", "citeme": [], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家自然科学基金（61922060，61775156，61805172，61905173，62174117）；山西省重点研发国际合作项目（201803D421044）；山西省自然科学基金（201901D211115）；霍英东教育基金会高等院校青年教师基金（20171402210001）；山西省高等学校科技成果转化培育项目（2020CG013）；吕梁市高层次科技人才引进专项项目（Rc2020207）；山西省平台与基地专项（201805D131012-3）资助项目" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by National Natural Science Foundation of China (61922060, 61775156, 61805172, 61905173, 62174117); Key Research and Development International Cooperation Projects of Shanxi Province (201803D421044); Natural Science Foundation of Shanxi Province (201901D211115); Fok Ying-Tong Education Foundation for Young Teachers in The Higher Education Institutions of China (20171402210001); Transformation and Cultivation Project of Scientific and Technological Achievements in Colleges and Universities of Shanxi Province (2020CG013); Lüliang High-level Scientific and Technological Talents Introduction Special Project (Rc2020207); Shanxi Platform and Base Special Project (201805D131012-3)" } ] } ], "history": { "received": "2022-01-23", "revised": "2022-02-11", "opub": "2022-05-23" }, "copyright": { "data": [], "year": "2022" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "5", "volume": "43", "originalSource": [] }