Single-layer Thermally Activated Delayed Fluorescent Organic Light-emitting Devices and Exciton Distribution Profiles Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "单层热激活延迟荧光有机发光器件及其激子分布特性" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Single-layer Thermally Activated Delayed Fluorescent Organic Light-emitting Devices and Exciton Distribution Profiles" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "唐", "givenname": "歌", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "TANG", "givenname": "Ge", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "唐歌(1996-)，女，黑龙江大庆人，硕士研究生，2019年于吉林大学获得学士学位，主要从事有机电致发光器件方面的研究。E-mail: tangge19@mails.jlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724780&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724770&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724772&type=" } ], "data": [ [ { "name": "text", "data": "唐歌" }, { "name": "text", "data": "(1996-)，女，黑龙江大庆人，硕士研究生，2019年于吉林大学获得学士学位，主要从事有机电致发光器件方面的研究。E-mail: " }, { "name": "text", "data": "tangge19@mails.jlu.edu.cn" } ] ] } ], "email": "tangge19@mails.jlu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "士浩", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Shi-hao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "乐天", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Le-tian", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "谢", "givenname": "文法", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XIE", "givenname": "Wen-fa", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "*E-mail: xiewf@jlu.edu.cn", "data": [ { "name": "text", "data": "*E-mail: xiewf@jlu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "谢文法(1978-)，男，福建三明人，博士，教授，博士生导师，2004年于吉林大学获得博士学位，主要从事有机光电子学方面的研究。E-mail: xiewf@jlu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724775&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724785&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724787&type=" } ], "data": [ [ { "name": "text", "data": "谢文法" }, { "name": "text", "data": "(1978-)，男，福建三明人，博士，教授，博士生导师，2004年于吉林大学获得博士学位，主要从事有机光电子学方面的研究。E-mail: " }, { "name": "text", "data": "xiewf@jlu.edu.cn" } ] ] } ], "email": "xiewf@jlu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "吉林大学　电子科学与工程学院，集成光电子学国家重点实验室吉林大学实验区，吉林　长春　130012", "data": [ { "name": "text", "data": "吉林大学　电子科学与工程学院，集成光电子学国家重点实验室吉林大学实验区，吉林　长春　130012" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of Integrated Optoelectronics, Jilin University Region, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China", "data": [ { "name": "text", "data": "State Key Laboratory of Integrated Optoelectronics, Jilin University Region, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "单层结构对简化有机电致发光器件(OLED)的制备工艺及降低其制造成本具有重要意义。本文采用非掺杂热激活延迟荧光(TADF)发光层，结合C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(3 nm)/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)修饰的ITO阳极及4,7-二苯基-1,10-菲啰啉(Bphen,3 nm)修饰的Ag 阴极，制备了单层TADF器件(TADF-OLED)。该单层TADF-OLED具有良好的空穴和电子注入能力，开启电压为3 V，最大电流、功率及外量子效率分别可达到37.7 cd/A、47.4 lm/W和13.24%。然后，我们利用“探针法”研究了该单层TADF-OLED的激子分布情况，发现大部分激子在发光层靠近阳极侧形成。最后，我们利用经典电磁学理论对器件的光取出效率进行模拟分析，证实了这种激子分布特性有助于实现较高的光取出效率，进而改善器件的外量子效率。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Developing single-layer structure is important to simplify fabrication processes and reduce manufacture costs of organic light-emitting devices(OLEDs). In this work, we develop an efficient single-layer thermal activation delayed fluorescence(TADF) OLED by combining a non-doped TADF emitting layer, a C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(3 nm)/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm) modified ITO anode and a 4,7-Diphenyl-1,10-phenanthroline(Bphen, 3 nm) modified silver cathode. The single-layer TADF-OLED can achieve efficient hole and electron injection ability such that it has a low turn-on voltage of 3 V, a maximum current efficiency of 37.7 cd/A, a maximum power efficiency of 47.4 lm/W, and an external quantum efficiency of 13.24%. And then, we investigate the exciton distribution profile of the single-layer TADF-OLED by using a \"probe\" method. It is found that most excitons are formed at the emitting layer close to the anode. Finally, with the classical theory of electromagnetism, we simulate and analyze the outcoupling efficiency, and prove that this exciton distribution profile is beneficial to achieve higher outcoupling efficiency, and thus the external quantum efficiency of single-layer OLEDs." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "单层有机发光器件" } ], [ { "name": "text", "data": "热激活延迟荧光" } ], [ { "name": "text", "data": "激子分布" } ], [ { "name": "text", "data": "电极修饰层" } ], [ { "name": "text", "data": "光取出效率" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "single-layer OLED" } ], [ { "name": "text", "data": "thermal activation delayed fluorescence(TADF)" } ], [ { "name": "text", "data": "exciton distribution profile" } ], [ { "name": "text", "data": "anode modified layer" } ], [ { "name": "text", "data": "outcoupling efficiency" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "有机发光二极管(OLED)因其高对比度、高色彩饱和度、低功耗等优势，在照明和显示领域展现出了巨大的商业价值和应用前景" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，荧光材料和磷光材料常被用作OLED的发光材料。但是它们均具有各自的局限，比如，荧光材料内量子效率受限，而磷光材料掺有重金属，昂贵且不可再生。因此作为第三代OLED发光材料的热激活延迟荧光材料(Thermally activated delayed fluorescence,TADF)应运而生" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R2", "R3" ], "text": "2-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。TADF材料具有反向系间窜越(Reverse inter system crossing,RISC)行为，即单重激发态和三重激发态能极差很小，三重态激发态能够很轻易地吸收环境热量，并上转换为单重激发态发光。因此TADF材料能够同时利用单线态、三重态发光，使内量子效率理论值能达到100%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "OLED器件从之前邓青云博士发明的“三明治结构”，再到发展成如今最常见的多层结构，器件结构愈加复杂，在提高器件效率的同时，也增加了制备成本" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R4", "R5" ], "text": "4-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。单层器件较之多层器件，没有功能层调节层与层之间的能级匹配，因此缺少的传输层和阻挡层可能导致电荷注入效果低以及载流子传输不平衡的问题。目前已报道过一些基于磷光发光层的单层OLED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R6", "R7", "R8" ], "text": "6-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但基于TADF发光层的单层器件的报道还很少见" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通常而言，TADF材料具有双极性的特点，因此，无需额外添加传输层、阻挡层便可以实现良好的载流子传输，避免载流子积累，并减少激子的猝灭。此外，TADF材料可以同时利用单线态激子和三重态激子，非掺杂TADF发光层被证实可以实现良好的发光效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，在构建非掺杂单层OLED方面具有显著优势。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文采用高效的TADF材料CzDBA(9,10-二(4-(9H-咔唑-9-基)-2,6-二甲基苯基)-9,10-二硼蒽)作为非掺杂发光层，结合界面修饰的ITO阳极及Ag 阴极，制备了单层TADF器件(TADF-OLED)。首先，我们对器件的阳极修饰层(AML)进行了研究。根据器件性能分析，基于C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(3 nm)/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)为AML的器件有最佳性能，其最高亮度超过150 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，最大电流效率、功率效率和外量子效率分别可达37.7 cd/A、47.4 lm/W和13.24%。与其他AML相比，该AML的优势在于可以显著降低空穴注入势垒。接着，我们利用“探针法”研究了该单层TADF-OLED的激子分布情况，发现多数激子在发光层靠近阳极侧形成。最后，基于经典电磁学理论，我们利用自主研发的OptiXLED软件对器件的光取出效率进行分析，证实了这种激子分布特性有助于实现较高的光取出效率，进而改善器件的外量子效率。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "首先，使用Decon 90清洗剂对已预沉积铟锡氧化物(ITO)的玻璃衬底进行清洗，然后用去离子水对其超声清洗处理3次。随后将清洗后的衬底放入烘箱加热10 min(120 ℃)。待烘干之后，将其放置在真空度低于6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa的多源有机分子气相沉积系统中，利用真空热蒸镀法在衬底上依次沉积阳极修饰层、发光层、阴极修饰层和阴极。有机层、MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和Ag电极的沉积速率分别为0.1,0.01,0.2 nm· s" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，器件的发光面积为10 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。在室温环境下使用大塚GP500分光光度计测量系统同时进行器件光电特性的测试。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "单层器件中，阴极/阳极修饰层至关重要，因为它们能够修饰电极并改善载流子注入，从而影响器件载流子平衡" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。我们设计了四组不同AML层的器件，" }, { "name": "xref", "data": { "text": "图1(a)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(a)" } ] } }, { "name": "text", "data": "为单层TADF器件示意图，所示器件结构为ITO/AML/CzDBA(80 nm)/Bphen(3 nm)/Ag(100 nm)，四组AML的结构分别为：MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(3 nm)(器件A1)、C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(3 nm)(器件A2)、MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(3 nm)/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)(器件A3)以及C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(3 nm)/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)(器件A4)。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "(a)单层TADF器件示意图；(b)能级图；(c)CzDBA的分子结构。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "(a)Schematic diagrams of simple-layer TADF OLED. (b)Energy levels. (c)Molecular structure of CzDBA." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724793&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724791&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724796&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示为器件的光电特性曲线。从图中可知，相比于器件A1、A2和A3，器件A4性能明显提升。器件A4的最大电流效率、功率效率和外量子效率(EQE)分别可达37.7 cd/A、47.4 lm/W和13.24%。而器件A1和A2的最大电流效率小于15 cd/A，最大功率效率不超过20 lm/W。在相同亮度下，相比于器件A1和A2，器件A4的效率提升了近4倍。4个器件的开启电压都小于3 V，随着驱动电压的增大，器件A4的电流密度及亮度都显著高于器件A1、A2和A3。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "器件A1~A4的电流密度-电压-亮度特性(a)、外量子效率-亮度特性(b)、电流效率-亮度和功率效率-亮度特性(c)与归一化电致发光光谱(d)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "Current density-voltage-luminance(" }, { "name": "italic", "data": [ { "name": "text", "data": "V-J-L" } ] }, { "name": "text", "data": ")(a), external quantum efficiency-luminance(EQE-" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": ") curve(b), current efficiency-luminance(CE-" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": ") and power efficiency-luminance(PE-" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": ") characteristics(c) and normalized EL spectra(@6 V) (d) of device A1-A4." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724809&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724813&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724811&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "器件A4效率远高于其他3个器件的原因是，在高功函数的过渡金属氧化物MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "与有机半导体之间插入的具有高电离能的C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "界面层可以形成阳极到有机半导体的欧姆接触。欧姆接触的形成有助于降低空穴注入势垒，并改善空穴注入电流与电子注入电流的平衡性，从而减少载流子积累和激子猝灭等原因引起的非辐射复合损耗" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。欧姆接触的形成主要是因为C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "具有比CzDBA更高的电离能，可以使阳极的费米能级与CzDBA的电离能重新对准" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，空穴从阳极注入到复合区只有很小的能级势垒，仅需要较小的电压便可以实现高效的空穴注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。此外，有报道表明与ITO接触的C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "层可以在ITO阳极表面形成界面偶极子，因此在ITO与MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "之间额外引入的C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "层有助于进一步降低ITO到MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "的空穴注入势垒" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } } ], "rid": [ "R15", "R16" ], "text": "15-16", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，这可能是造成器件A4效率高于A3的原因。同样对于3 nm的电子注入层，Bphen深的HOMO能级(-6.4 eV)可以起到空穴阻挡作用，CzDBA较低的LUMO能级(-5.9 eV)也减轻了电子陷阱效应对器件平衡传输的影响。同时金属Ag沉积在有机物Bphen的过程中将形成金属-有机物“供体-受体”络合物，而这种络合物的形成也更利于电子的注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "单层器件的发光层较厚，因此通常具有宽的发光区。我们设计并制备了探针器件用以分析器件A4的激子分布情况。如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示，在器件发光层的不同位置分别插入0.3 nm的(乙酰丙酮)双(2-甲基二苯并［f,h］喹喔啉)合铱［Ir(MDQ)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-(acac)］红光超薄层作为探针，探针超薄层与CzDBA依次蒸镀形成非掺杂薄膜，制备了九组探针器件。九组探针器件B1~B9分别对应于不同的探针插入位置，即从阳极修饰层与发光层的界面开始依次间隔10 nm。我们课题组先前的研究表明该超薄层的插入对器件的电流-电压特性没有明显影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，而且绿光染料的激子能量可以充分地转移给红光染料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此通过测试器件的发光光谱特性，我们可以通过观察红光染料的发光强度分析器件激子的分布情况" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。我们将测试所得到的CzDBA发光峰设为1，探针器件的发光峰按照CzDBA的光谱进行归一化处理，排除CzDBA的光谱影响，比较各个探针器件的红光发射的相对强度。如" }, { "name": "xref", "data": { "text": "图4(a)、(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)、(b)" } ] } }, { "name": "text", "data": "所示，器件B1的红光发光强度最高，且占比达到50%，这表明激子主要在AML与发光层的界面处产生，这可归因于CzDBA的电子迁移率略高于空穴迁移率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "的曲线可以近似认为是器件A4中激子的空间分布特性" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": ")。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "(a)器件A4的探针器件结构示意图；(b)Ir-(MDQ)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(acac)的分子结构示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "(a)Probe devices for device A4. (b)Molecular structure of Ir(MDQ)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(acac)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724815&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724804&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724802&type=" } ] } }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "(a)各探针器件光谱；(b)器件A4的相对激子浓度分布。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "(a)EL spectra of probe devices(normalized to their green EL intensity). (b)Relative exciton concentration distribution of device A4." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724806&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724830&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724819&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了分析激子空间分布对器件效率的影响，我们利用经典电磁学理论对器件的光取出效率进行了模拟及分析。首先，器件的外量子效率存在如下关系：" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ext" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "int" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "outcoup" } ] }, { "name": "text", "data": "=" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "exc" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "φ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "·" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "outcoup" } ] }, { "name": "text", "data": "，其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "int" } ] }, { "name": "text", "data": "为内量子效率，" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "outcoup" } ] }, { "name": "text", "data": "为光取出效率，" }, { "name": "italic", "data": [ { "name": "text", "data": "γ" } ] }, { "name": "text", "data": "为电子-空穴平衡因子，" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "exc" } ] }, { "name": "text", "data": "为激子可利用率(TADF材料理论为100%)," }, { "name": "italic", "data": [ { "name": "text", "data": "φ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "P" } ] }, { "name": "text", "data": "为发光染料的量子产率。当材料体系确定时，外量子效率很大程度上取决于光取出效率和平衡因子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } } ], "rid": [ "R21", "R22" ], "text": "21-22", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，基于经典电磁学理论，我们采用自主研发的分析软件OptiXLED对器件的光取出效率进行了分析。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "首先，根据器件结构搭建了平面多层光学薄膜体系，然后，根据经典电磁力学理论，引入垂直(v)和平行(h)于平面方向的偶极子，这些偶极子的辐射光功率密度" }, { "name": "italic", "data": [ { "name": "text", "data": "K" } ] }, { "name": "text", "data": "可以由以下公式计算" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724834&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724839&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724840&type=" } } } ], "id": "DF1" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724842&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724843&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724856&type=" } } } ], "id": "DF2" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724859&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724864&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724867&type=" } } } ], "id": "DF3" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724869&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724871&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724875&type=" } } } ], "id": "DF4" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(5)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724889&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724892&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724882&type=" } } } ], "id": "DF5" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(6)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724899&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724913&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724905&type=" } } } ], "id": "DF6" } }, { "name": "text", "data": "其中， Re［］代表虚数的实部，" }, { "name": "italic", "data": [ { "name": "text", "data": "u" } ] }, { "name": "text", "data": "为归一化的面内波矢， " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724908&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724923&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724921&type=" } } } ] }, { "name": "text", "data": " ( " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724924&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724927&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724933&type=" } } } ] }, { "name": "text", "data": ")代表TM和TE偏振波从发射层向上(向下)方向传播的反射系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "z" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": " (" }, { "name": "italic", "data": [ { "name": "text", "data": "z" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "-" } ] }, { "name": "text", "data": ")为偶极子距发光层上下界面的距离，" }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "z" } ] }, { "name": "text", "data": ",e" } ] }, { "name": "text", "data": "为发光层中的波矢量的" }, { "name": "italic", "data": [ { "name": "text", "data": "z" } ] }, { "name": "text", "data": "方向分量。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "总辐射功率" }, { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "可由以下公式计算：" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724940&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724958&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724945&type=" } } } ] }, { "name": "text", "data": "，其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "Θ" } ] }, { "name": "text", "data": "为水平偶极子比。最后，根据多层光学薄膜体系可以进一步计算出远场辐射模式，进而得到器件的光取出效率。" } ] }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图5(a)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(a)" } ] } }, { "name": "text", "data": "所示为理论模拟的光取出效率-波长特性随偶极子位置(对应于探针所在位置)变化曲线(" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "outcoup" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "))。结合" }, { "name": "xref", "data": { "text": "图2(d)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(d)" } ] } }, { "name": "text", "data": "所示的发光光谱" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": ")，我们得到了器件A4光取出效率随发光区位置变化特性，即：" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724961&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724950&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724963&type=" } } } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图5(b)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(b)" } ] } }, { "name": "text", "data": "所示。从图中可以看出，当激子位于B1、B2和B3处时器件具有更高的光取出效率，约为33%。这主要由于B1、B2、B3处的激子远离金属电极，而金属/有机介质界面形成的表面等离子体激元(SPP)会对激子辐射产生共振吸收。由于远离金属电极，B1~B3处的激子辐射受到SPP共振吸收影响较弱，从而具有较高的光取出效率。结合" }, { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "所示的激子的空间分布特性" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "text", "data": ")，单层器件的光取出效率可以表示为：" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724952&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724971&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724967&type=" } } } ] }, { "name": "text", "data": "。于是，我们计算得到了器件A4的光取出效率为29.42%，器件的高光取出效率得益于激子的空间分布特性。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "(a)光取出效率-波长特性随偶极子位置变化曲线；(b)器件A4光取出效率随发光区位置变化特性。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "(a)Outcoupling efficiency of dipole source at different position of the emitting layer as a function of wavelength. (b)Outcoupling efficiency device A4 as a function of distance to the AML/EML interface." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724972&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724975&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724957&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "CzDBA薄膜的量子产率为90.6%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，因此，基于CzDBA的单层底发射器件的外量子效率理论最大值可达26.65%，该理论结果高于器件A4的最大外量子效率。我们认为，由于单层器件没有载流子限制层，因此存在较严重的漏电流，导致器件电子-空穴平衡因子远低于1，从而使得器件的外量子效率低于理论最大值。进一步改善载流子的平衡注入和传输将有助于提高器件效率。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文研究了不同阳极修饰层对空穴注入能力的影响，证实了结合过渡金属氧化物MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "与C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "可以形成ITO到有机半导体的欧姆注入，显著降低空穴注入势垒。实验结果表明，阳极修饰层结构为C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(3 nm)/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)的器件空穴注入效果最好。基于此，我们成功制备了结构为ITO/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "(3 nm)/C" }, { "name": "sub", "data": [ { "name": "text", "data": "60" } ] }, { "name": "text", "data": "(2 nm)/CzDBA(80 nm)/Bphen(3 nm)/Ag(100 nm)的高效率单层TADF器件。该器件开启电压为3 V，最大电流效率、功率效率和外量子效率分别可达37.7 cd/A、47.4 lm/W和13.24%。我们进一步研究了单层器件中的激子空间分布对器件光取出效率的影响，证实了该器件的激子空间分布情况有助于实现高光取出效率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220014." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献：" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "李继军" }, { "name": "text", "data": ", " }, { "name": "text", "data": "聂晓梦" }, { "name": "text", "data": ", " }, { "name": "text", "data": "李根生" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". 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