Low Temperature 808 nm High Efficiency Semiconductor Laser Enhanced Publication

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "低温808 nm高效率半导体激光器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Low Temperature 808 nm High Efficiency Semiconductor Laser" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "吴", "givenname": "顺华", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WU", "givenname": "Shun-hua", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "吴顺华(1998-)，男，江西抚州人，硕士研究生，2019年于华南理工大学获得学士学位，主要从事高功率半导体激光器方面的研究。E-mail: wushunhua2021@163.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020199&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020200&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020192&type=" } ], "data": [ [ { "name": "text", "data": "吴顺华" }, { "name": "text", "data": "(1998-)，男，江西抚州人，硕士研究生，2019年于华南理工大学获得学士学位，主要从事高功率半导体激光器方面的研究。E-mail: " }, { "name": "text", "data": "wushunhua2021@163.com" } ] ] } ], "email": "wushunhua2021@163.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "刘", "givenname": "国军", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Guo-jun", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" }, { "rid": "aff3", "text": "3" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "*E-mail: gjliu626@126.com", "data": [ { "name": "text", "data": "*E-mail: gjliu626@126.com" } ] } ], "bio": [ { "lang": "zh", "text": [ "刘国军(1963-)，男，吉林长春人，博士，研究员，博士生导师，1990年于清华大学获得博士学位，主要从事光电子技术与应用方面的研究。E-mail: gjliu626@126.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020210&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020206&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020216&type=" } ], "data": [ [ { "name": "text", "data": "刘国军" }, { "name": "text", "data": "(1963-)，男，吉林长春人，博士，研究员，博士生导师，1990年于清华大学获得博士学位，主要从事光电子技术与应用方面的研究。E-mail: " }, { "name": "text", "data": "gjliu626@126.com" } ] ] } ], "email": "gjliu626@126.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "贞福", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Zhen-fu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff4", "text": "4" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "特", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Te", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff4", "text": "4" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "Lite@opt.ac.cn", "data": [ { "name": "text", "data": "Lite@opt.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "李特(1981-)，男，吉林梅河口人，博士，研究员，硕士生导师，2008年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事半导体激光技术、光电子技术与应用等方面的研究。E-mail: Lite@opt.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020225&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020221&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020222&type=" } ], "data": [ [ { "name": "text", "data": "李特" }, { "name": "text", "data": "(1981-)，男，吉林梅河口人，博士，研究员，硕士生导师，2008年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事半导体激光技术、光电子技术与应用等方面的研究。E-mail: " }, { "name": "text", "data": "Lite@opt.ac.cn" } ] ] } ], "email": "Lite@opt.ac.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "长春理工大学　光电工程学院，吉林　长春　130022", "data": [ { "name": "text", "data": "长春理工大学　光电工程学院，吉林　长春　130022" } ] }, { "lang": "en", "label": "1", "text": "School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China", "data": [ { "name": "text", "data": "School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "长春理工大学　高功率半导体激光国家重点实验室，吉林　长春　130022", "data": [ { "name": "text", "data": "长春理工大学　高功率半导体激光国家重点实验室，吉林　长春　130022" } ] }, { "lang": "en", "label": "2", "text": "State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China", "data": [ { "name": "text", "data": "State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "海南师范大学物理与电子工程学院　海南省激光技术与光电功能材料重点实验室，海南　海口　571158", "data": [ { "name": "text", "data": "海南师范大学物理与电子工程学院　海南省激光技术与光电功能材料重点实验室，海南　海口　571158" } ] }, { "lang": "en", "label": "3", "text": "College of Physics and Electronic Engineering, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Hainan Normal University, Haikou 571158, China", "data": [ { "name": "text", "data": "College of Physics and Electronic Engineering, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Hainan Normal University, Haikou 571158, China" } ] } ] }, { "id": "aff4", "intro": [ { "lang": "zh", "label": "4", "text": "中国科学院西安光学精密机械研究所　瞬态光学与光子技术国家重点实验室，陕西　西安　710119", "data": [ { "name": "text", "data": "中国科学院西安光学精密机械研究所　瞬态光学与光子技术国家重点实验室，陕西　西安　710119" } ] }, { "lang": "en", "label": "4", "text": "State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China", "data": [ { "name": "text", "data": "State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "为了提高低温工作环境下808 nm半导体激光器的输出特性，深入研究了电光转换效率的温度特性。结合载流子泄漏抑制和器件串联电阻的优化考虑，从理论上深入分析了有源区量子阱内的载流子限制现象，提出针对低温工作环境下的势垒高度及相应的量子阱结构设计方法，包括势垒层的材料组分、厚度等重要参数的优化，极大地改善了器件在低温工作环境下的性能。采用优化后的外延结构，制备了腔长2 mm的半导体激光巴条。在工作温度-50 ℃、注入电流为600 A时，巴条输出功率达到799 W，电光转换效率为71%，斜率效率为1.34 W/A；注入电流为400 A时，器件达到最高电光转换效率73.5%，此时的载流子限制效率约为99%，串联电阻为0.43 mΩ；在-60~60 ℃温度范围内，中心波长随温度的漂移系数为0.248 nm/℃。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "In order to improve the performance of 808 nm semiconductor laser operating at low temperature, the temperature dependence of electro-optical conversion efficiency was studied. Combining the suppression of carrier leakage and the optimization of the series resistance, the carrier confinement phenomenon in the quantum well was analyzed theoretically. Moreover, the potential barrier height and the corresponding quantum well structure for low temperature operating were proposed, including the optimization of important parameters such as the material composition and thickness of the barrier layer, which showed significant benefit for operation under low temperature. Basing on the optimized epitaxial structure, semiconductor laser bars with a cavity length of 2 mm were fabricated. Under the temperature of -50 ℃, an electro-optical conversion efficiency of 71% was demonstrated with a slope efficiency of 1.34 W/A and an injection current of 600 A. Record high electro-optical conversion efficiency of 73.5% was reached with the injection current of 400 A, while the carrier confinement efficiency was as high as 99%, and the series resistance was as low as 0.43 mΩ. In the temperature range of -60-60 ℃, the shift coefficient of the center wavelength with temperature was about 0.248 nm/℃." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "半导体激光器" } ], [ { "name": "text", "data": "载流子泄漏" } ], [ { "name": "text", "data": "低温" } ], [ { "name": "text", "data": "高效率" } ], [ { "name": "text", "data": "温度效应" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "semiconductor laser" } ], [ { "name": "text", "data": "carrier leakage" } ], [ { "name": "text", "data": "low temperature" } ], [ { "name": "text", "data": "high efficiency" } ], [ { "name": "text", "data": "temperature effects" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体激光器与其他激光器相比，具有体积小、效率高、寿命长、稳定性好、覆盖波段范围广、驱动方式简单、可单片集成等多种优点，广泛应用在激光加工、激光泵浦、先进制造、医疗美容、航空航天、激光通信、数据存储等领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R1", "R2", "R3", "R4" ], "text": "1-4", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。由于半导体激光器本身的光束质量较差，常用作全固态激光器和光纤激光器的泵浦源，这种应用模式既可以充分发挥半导体激光器高功率、高效率的优势，又弥补了光束发散角大、不利于直接应用的缺点。另外，半导体激光器寿命长、光谱线宽较窄，可以很好地与固体激光器工作物质的光谱吸收带重合，有利于提高系统的电光转换效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } } ], "rid": [ "R5", "R6" ], "text": "5-6", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。目前，固体激光器系统光光转换效率一般在50%以下，因此系统散热需求较大，通常需要配备大型冷却装置，导致整个系统过于笨重" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了减轻散热系统的压力，固体激光系统对半导体激光泵浦源的电光转换效率提出了更高的要求。808 nm半导体激光器主要用于泵浦以Nd为增益介质的固体激光器，如Nd∶YAG、Nd∶YVO" }, { "name": "sub", "data": [ { "name": "text", "data": "4" } ] }, { "name": "text", "data": "、Nd∶YAP、Nd∶YLF等" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这一波长的高功率半导体激光器发展比较成熟，应用范围也较广。不同于9xx nm半导体激光器，808 nm半导体激光器的单光子能量更高，吸收损耗更大，更难实现高电光转换效率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "常见的提高电光转换效率的方法有降低工作温度、优化外延结构、改进封装工艺等，国内外研究机构对此展开了多项研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R9", "R10", "R11", "R12", "R13" ], "text": "9-13", "type": "bibr" } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "。2005年，Kanskar等对大功率半导体激光器的功率损耗来源进行了详细分析，通过设计宽波导外延结构、优化掺杂分布等措施，成功将970 nm半导体激光器的电光转换效率由50%提高到73%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2010年，Cao等系统地研究了InGaAsP压应变量子阱和GaAsP张应变量子阱，并优化了量子阱的应变和厚度，制备的808 nm巴条器件在测试温度为5 ℃时输出功率超过50 W，电光转换效率高达67%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2017年，宋云菲等以1.5 mm腔长的传导冷却封装808 nm半导体激光阵列为研究对象，将热沉温度从25 ℃降到-40 ℃，电光转换效率从56.7%提高到66.8%，其中载流子泄漏损失从16.6%下降至3.1%，表明低温下载流子泄漏损耗的显著降低是导致其电光转换效率增高的主要原因；同时指出低温下的主要功率损耗来源是焦耳热和阈值以下自发辐射，分别占10.3%和8.9%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2016年，Frevert等对半导体激光器进行低温外延结构设计，认为在不明显增大载流子泄漏的前提下进一步降低串联电阻是提高电光转换效率的关键。据此优化了波导层Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As组分，制备的准连续940 nm巴条器件在-70 ℃时峰值功率达到1 kW，电光转换效率为70%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2017年，王贞福等对外延结构进行优化，采用非对称宽波导外延结构，推算出内损耗仅为0.5 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，内量子效率高达97%，制备出填充因子30%的808 nm阵列，在15 ℃时最大电光转换效率达到71%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。2017年，Gapontsev等通过改进器件封装工艺和结构，降低了欧姆接触电阻和热阻，热阻值仅为2.21 K/W，制备的4 mm腔长、100 μm条宽的976 nm单管器件在室温连续条件下，最高电光转换效率达到73%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。上述研究主要从实验角度证实了温度和外延结构对半导体激光器输出特性的影响，但对低温下电光转换效率的改善机理缺乏理论分析。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文结合载流子泄漏抑制和器件串联电阻的优化需求" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从理论上研究影响有源区载流子限制能力的相关设计因素，给出了量子阱物理参数与载流子限制因子的定量关系。采用优化后的外延结构，制作了半导体激光巴条器件，并通过变温实验测试，验证了该结构的载流子限制能力，最后对理论与实验结果作了相关讨论。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "理论" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "有源区载流子限制理论" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "半导体激光器的输出光功率与注入电流近似满足线性关系" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020240&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020234&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020253&type=" } } } ], "id": "DF1" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "slop" } ] }, { "name": "text", "data": "表示斜率效率，" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "th" } ] }, { "name": "text", "data": "为阈值电流，" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "为内量子效率，" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "m" } ] }, { "name": "text", "data": "为镜面损耗，" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "为内损耗，" }, { "name": "italic", "data": [ { "name": "text", "data": "h" } ] }, { "name": "text", "data": "表示普朗克常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "ν" } ] }, { "name": "text", "data": "为激光频率，" }, { "name": "italic", "data": [ { "name": "text", "data": "e" } ] }, { "name": "text", "data": "为元电荷电量。从公式(1)可以看出，内量子效率对输出功率的影响非常显著，直接决定着斜率效率" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "slop" } ] }, { "name": "text", "data": "的大小。内量子效率定义为激光器有源区产生的光子数与电极区注入的电子空穴对的比值，由于有源区存在杂质缺陷、异质结界面态和量子阱载流子泄漏等因素，使得注入有源区的电子空穴对不能100%产生辐射复合，即" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "总是小于1。为分析载流子有效利用率下降的原因，可以将内量子效率划分为三部分：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020249&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020258&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020270&type=" } } } ], "id": "DF2" } }, { "name": "text", "data": "其中，载流子注入效率" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "inj" } ] }, { "name": "text", "data": "是指从电极区注入的载流子有效进入有源区的比例，这一部分损失主要由横向电流扩展及异质结势垒过高导致局部载流子聚集引起。载流子限制效率" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "con" } ] }, { "name": "text", "data": "表示注入有源区的载流子被有效限制在量子阱内的比例，这一部分损失主要由量子阱势垒高度不够以及有源区温度过高导致载流子越过势垒进入波导层引起。辐射复合效率" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "rad" } ] }, { "name": "text", "data": "表示限制在量子阱内的载流子进行有效辐射复合产生光子的比例，这一部分损耗主要来源于杂质缺陷及异质结界面态引发的非辐射复合如俄歇复合和Shockley-Hall-Read复合(简称SHR复合)。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "辐射复合效率的计算公式为" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020262&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020265&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020267&type=" } } } ], "id": "DF3" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "spon" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "stim" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "Auger" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "SHR" } ] }, { "name": "text", "data": "分别代表自发辐射复合速率、受激辐射复合速率、俄歇复合速率和SHR复合速率，受激辐射复合速率是光子密度" }, { "name": "italic", "data": [ { "name": "text", "data": "S" } ] }, { "name": "text", "data": "、增长率" }, { "name": "italic", "data": [ { "name": "text", "data": "v" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "和增益系数" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": ")的乘积，" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "text", "data": "为各复合类型系数。对于常见的808 nm InAlGaAs量子阱材料，" }, { "name": "italic", "data": [ { "name": "text", "data": "A" } ] }, { "name": "text", "data": "=1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "7" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "=2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-16" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "C" } ] }, { "name": "text", "data": "=2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-41" } ] }, { "name": "text", "data": "，且各系数受温度影响不大，因此辐射复合效率主要与量子阱内载流子浓度相关" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "下面讨论载流子限制效率" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "con" } ] }, { "name": "text", "data": "，根据量子阱能带结构及载流子能级填充理论" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，可计算出量子阱内不同能级间的载流子浓度分布：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020280&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020282&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020291&type=" } } } ], "id": "DF4" } }, { "name": "text", "data": "载流子限制效率近似等于限制在势阱内的电子浓度与整个导带能级内的电子浓度之比：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(5)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020300&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020297&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020315&type=" } } } ], "id": "DF5" } }, { "name": "text", "data": "当" }, { "name": "italic", "data": [ { "name": "text", "data": "E-E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "≫" }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "B" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "时，费米分布函数" }, { "name": "italic", "data": [ { "name": "text", "data": "f" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": ")可近似为波尔茨曼分布函数，公式(5)可取约等号，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "=" } ] }, { "name": "text", "data": " " }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020318&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020311&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020320&type=" } } } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "=" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020324&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020327&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020333&type=" } } } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i1" } ] }, { "name": "text", "data": "为电子第一子能级与导带底的能级差，Δ" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "为量子阱与量子垒的导带底能级差，" }, { "name": "italic", "data": [ { "name": "text", "data": "k" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "B" } ] }, { "name": "text", "data": "为波尔茨曼常数，" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "c" } ] }, { "name": "text", "data": "-" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "F" } ] }, { "name": "text", "data": "为量子阱导带底与费米能级之差，该值与量子阱载流子注入浓度相关。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文采用常见的压应变InAlGaAs/AlGaAs量子阱结构，根据公式(5)，可以得到不同温度、不同势垒Al组分对应的载流子限制效率曲线，如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。可以看出，低温下较低的势垒高度就可以实现较好的载流子限制，而随着温度升高，为了达到良好的载流子限制效果，需要适当增加势垒高度。例如，在-50 ℃的低温条件下，势垒Al组分为0.25就可以实现高于99%的载流子限制效率，高于0.25对于载流子限制效率的提升不大；但随着Al组分的增加，Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As材料体系的电导率下降，器件电阻将相应增大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "载流子限制效率随温度、势垒Al组分变化曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Curves of carrier confinement efficiency with temperature and Al composition in barrier" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020336&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020341&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020339&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "影响电光转换效率的另一个重要因素为器件串联电阻，它可以近似为各外延层体电阻之和，采用如下公式计算" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(6)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020342&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020350&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020359&type=" } } } ], "id": "DF6" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "i" } ] } ] }, { "name": "text", "data": "表示各外延层的厚度，" }, { "name": "italic", "data": [ { "name": "text", "data": "W" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "分别是器件的条宽和腔长，" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "i" } ] } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "i" } ] } ] }, { "name": "text", "data": "分别表示各外延层的电子、空穴浓度，" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "e" }, { "name": "italic", "data": [ { "name": "text", "data": "i" } ] } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "μ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "h" }, { "name": "italic", "data": [ { "name": "text", "data": "i" } ] } ] }, { "name": "text", "data": "分别表示各外延层的电子迁移率和空穴迁移率。公式(6)表明，体电阻与厚度成正比，与载流子浓度、载流子迁移率成反比。串联电阻主要由较厚的基底层和掺杂浓度较低的波导层决定(总占比接近80%)，由于基底过薄会导致整个外延片机械结构不稳定，因此对串联电阻的优化主要体现在波导层。优化途径一般有三种：第一种方法是减小波导层的厚度，这会导致远场发散角增大，并增大腔面负载，引起光学腔面损伤(COMD)阈值下降，不利于高功率输出要求；第二种方法是增大掺杂浓度，由于波导层的光子密度较高，增加掺杂浓度会引起内损耗增大，导致外微分量子效率下降；第三种方法是提高载流子迁移率，可以通过降低波导层Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As材料的Al组分实现" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但是Al组分也不能过低，否则会导致载流子限制效率下降。因此对串联电阻的优化需要综合考虑COMD阈值、内损耗、载流子限制能力、光束质量等因素。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "结构仿真与设计" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "根据" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "，势垒层采用Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.25" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.75" } ] }, { "name": "text", "data": "As材料，同时为了兼顾COMD阈值、内损耗和串联电阻，对各外延层的组分、厚度和掺杂浓度进行了优化，结构如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。缓冲层为0.5 μm N-GaAs材料，掺杂浓度为2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "。为了减小P包层的串联电阻，采用0.5 μm的渐变折射率(GRIN)Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As层，Al组分从0.4渐变至0.5，掺杂浓度分两段分别是2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "和4" }, { "name": "italic", "data": [ { "name": "text", "data": "." } ] }, { "name": "text", "data": "5" }, { "name": "italic", "data": [ { "name": "text", "data": "×" } ] }, { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "。为了在降低波导层的载流子吸收损耗的同时兼顾波导层的串联电阻，将波导层分段掺杂处理，靠近量子阱的一段不主动掺杂，靠近包层的一段渐变低掺杂。同时，为了保证器件能够满足高功率输出要求，采用总厚度为2 μm宽波导结构以降低量子阱区的光限制因子，其中N波导层为1.2 μm,P波导层为0.8 μm。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "外延结构参数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "Epitaxial structure parameters" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "描述" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "材料" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "厚度/μm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "掺杂类型" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "掺杂浓度/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "P-帽层" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.2" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "C" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3" }, { "name": "italic", "data": [ { "name": "text", "data": "×" } ] }, { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "19" } ] }, { "name": "text", "data": "→1" }, { "name": "italic", "data": [ { "name": "text", "data": "×" } ] }, { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "20" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "P-包层" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "As-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.5" } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.5" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "C" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2" }, { "name": "italic", "data": [ { "name": "text", "data": "×" } ] }, { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": "→4.5" }, { "name": "italic", "data": [ { "name": "text", "data": "×" } ] }, { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "P-波导层" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.25" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.75" } ] }, { "name": "text", "data": "As-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.4" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.6" } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.8" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "C" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "5" }, { "name": "italic", "data": [ { "name": "text", "data": "×" } ] }, { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "16" } ] }, { "name": "text", "data": "→2" }, { "name": "italic", "data": [ { "name": "text", "data": "×" } ] }, { "name": "text", "data": "10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "量子垒" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.25" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.75" } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.05" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Undoped" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "None" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "量子阱" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "InAlGaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.008" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Undoped" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "None" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "量子垒" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.25" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.75" } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.05" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Undoped" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "None" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "N-波导层" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.35" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.65" } ] }, { "name": "text", "data": "As-Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.25" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.75" } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.2" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Si" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "17" } ] }, { "name": "text", "data": "→5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "16" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "N-包层" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.35" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.65" } ] }, { "name": "text", "data": "As" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.5" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Si" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": "→2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "17" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "N-缓冲层" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.5" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "Si" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "N-基底" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "GaAs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "150" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Si" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020361&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020360&type=" } } }, { "name": "p", "data": [ { "name": "text", "data": "借助Crosslight公司的PICS3D仿真软件对上述外延结构进行仿真分析，重点研究了非对称宽波导结构中载流子浓度和光场强度在外延方向的分布。如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示，其中电子和空穴浓度均采用对数坐标系，并对基模光场强度进行了归一化。量子阱光限制因子为1.47%,N波导层光限制因子为56.1%,P波导层光限制因子为42.4%。由于光场限制较好，在N侧光场强度为10%最大值处电子浓度仅为4.4×10" }, { "name": "sup", "data": [ { "name": "text", "data": "16" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "，在P侧光场强度为10%最大值处空穴浓度仅为2.9×10" }, { "name": "sup", "data": [ { "name": "text", "data": "16" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "外延方向的电子浓度、空穴浓度与光场强度分布(起始位置为N-缓冲层)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "Electron concentration, hole concentration and optical field intensity distribution in the epitaxial direction(The starting position is the N-buffer layer)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020362&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020377&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020375&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "内损耗的近似计算公式为" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(7)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020366&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020378&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020379&type=" } } } ], "id": "DF7" } }, { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "Γ" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "j" } ] } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "j" } ] } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "p" } ] }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "j" } ] } ] }, { "name": "text", "data": "分别为各外延层的光限制因子、电子浓度和空穴浓度，" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "分别是电子和空穴对光子的吸收系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "scattering" } ] }, { "name": "text", "data": "代表散射损耗。对于808 nm GaAs基材料" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "］" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "≈3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "σ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "p" } ] }, { "name": "text", "data": "≈10×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "scattering" } ] }, { "name": "text", "data": "≈0.1cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。根据光场在波导中的具体分布情况和内损耗的近似公式，计算出外延结构的内损耗" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "约为0.57 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "为进一步预计器件在低温条件下的光电输出特性，我们模拟了条宽170 μm、腔长2 mm的单管器件的功率-电流-电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I-V" } ] }, { "name": "text", "data": ")特性，" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "为器件在-50 ℃时的输出特性曲线。由于载流子限制效率接近99%，器件的斜率效率达到1.28 W/A，最大电光转换效率为68.7%。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "-50 ℃单管仿真" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I-V" } ] }, { "name": "text", "data": "曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "Single emitter " }, { "name": "italic", "data": [ { "name": "text", "data": "L-I-V" } ] }, { "name": "text", "data": " simulation results for -50 ℃ temperature" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020372&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020390&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020381&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了研究温度对器件内部各损耗因子的影响，我们进一步分析了在-60~60 ℃温度范围内器件的输出特性，重点研究了量子阱材料增益、载流子浓度、内损耗、辐射复合效率和载流子限制效率随温度的变化情况，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示。可以看出，随着有源区温度升高，量子阱的材料增益能力和载流子限制能力都在变弱，导致在10 A注入电流下量子阱内的载流子浓度呈指数级上升，并引起内损耗和辐射复合效率以指数级恶化。在-50 ℃时，量子阱内的载流子浓度为2.03×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "；当有源区温度上升至50 ℃时，载流子浓度为2.78×10" }, { "name": "sup", "data": [ { "name": "text", "data": "18" } ] }, { "name": "text", "data": " cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-3" } ] }, { "name": "text", "data": "，增加了37%。伴随着载流子浓度增大，内损耗从-50 ℃时的0.57 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "增加到50 ℃时的1.67 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，增加了193%；辐射复合效率从-50 ℃时的94.9%下降至50 ℃时的92.6%，下降了2.3%；载流子限制效率从-50 ℃时的99.2%下降到50 ℃时的94.3%，下降了4.9%。根据公式(1)、(2)，斜率效率也将随温度呈现指数级变化趋势，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。当温度从-50 ℃上升到50 ℃时，斜率效率从1.28 W/A降到1.10 W/A，阈值电流从0.27 A增加到0.57 A，串联电阻从25.4 mΩ增加到26.9 mΩ，最大电光转换效率从68.7%降到51.3%。综合来看，随着温度升高，有源区材料增益下降、载流子限制能力变差、非辐射复合占比增多及内损耗增大等因素共同作用，导致阈值电流和斜率效率快速恶化，并最终引起电光转换效率显著降低。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "(a)量子阱材料增益随温度和载流子浓度变化曲线；(b)量子阱载流子浓度、内损耗、辐射复合效率和载流子限制效率随温度变化曲线。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "(a)Variation curves of quantum well material gain with temperature and carrier concentration. (b)Variation curves of quantum well carrier concentration, internal loss, radiation recombination efficiency and carrier confinement efficiency with temperature." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020384&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020392&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020386&type=" } ] } }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "-50~50 ℃仿真" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I-V" } ] }, { "name": "text", "data": "曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "The simulated " }, { "name": "italic", "data": [ { "name": "text", "data": "L-I-V" } ] }, { "name": "text", "data": " curves in the range of -50-50 ℃　" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020394&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020405&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020403&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "器件制备" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "使用金属有机物化学气相沉积(MOCVD)设备进行外延材料生长。采用标准的半导体激光芯片制作工艺进行了器件制作。通过光刻、腐蚀等工艺制备脊型波导结构，再利用等离子体增强型化学气相沉积(PECVD)生长厚度约为150 nm的SiN介质膜作为电绝缘隔离层，在脊型波导上腐蚀出P型电极窗口后再进行热蒸发Ti/Pt/Au作为P型欧姆接触电极，将晶片减薄至约150 μm后蒸发AuGeNi/Au作为N型欧姆接触电极。在完成芯片解理后，采用标准工艺对腔面进行钝化及镀膜处理，前腔面镀增透膜Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，在808 nm处反射率为3%，后腔面镀高反膜Si/Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "，反射率大于95%。巴条芯片长1 cm，腔长2 mm，填充因子为75%，包含44个条宽为170 μm的发光单元。最后经回流焊接等工艺，将激光器管芯P面朝下封装在铜微通道(MCC)冷却散热器上，并进行电光参数测试。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "测试系统和测试结果" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "我们自主搭建了一套变温" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I-V" } ] }, { "name": "text", "data": "巴条测试系统，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。MCC封装巴条通过夹具固定在散热底板上，通过接入冷却循环液控制工作温度，利用接触式探针测量芯片端面电压，出光腔面一侧放置积分球接收光信号并由光电二极管探测器及光谱仪测量输出光功率和光谱。在驱动电流重复频率400 Hz、脉宽200 μs，占空比8%条件下，测试-60~60 ℃范围内的巴条电光特性。对于0 ℃以下的低温测试，采用五氟丙烷为冷却液。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "半导体激光器测试系统结构简图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "Structure diagram of laser bar test system" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020407&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020396&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020395&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "按照" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "的测试系统测试巴条在不同温度下的输出特性。" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "是器件在-50 ℃时的" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I-V" } ] }, { "name": "text", "data": "特性仿真值与实验结果的对比，其中巴条仿真值是通过单管仿真倍数放大推导而来。从实验测试结果可以看出，巴条器件在600 A注入电流下输出功率达到799 W，此时电光转换效率为71%；当注入电流为400 A，器件达到最大电光转换效率73.5%。并且仿真值与实验结果具有较高的一致性，仿真的最大电光转换效率值为69.3%，实验值为73.5%，差值为4.2%。说明我们采用的理论模型能对巴条进行较为精确的仿真，这对于进一步提高巴条器件的电光转换效率非常重要。其中4.2%的差距主要来源于阈值电流、斜率效率和串联电阻的计算偏差，贡献率占比分别为34.9%、48.7%和16.3%。仿真的阈值电流为15.6 A，略低于实验值23.4 A，推测是有源区的材料增益计算偏差引起的。仿真的斜率效率为1.28 W/A，略低于实验值1.34 W/A，推测是巴条结构的横向电流扩展过大导致内量子效率计算值偏低引起的。仿真的串联电阻值为0.53 mΩ，略高于实验值0.43 mΩ。在对串联电阻的仿真计算中，需要借助仿真数据库中的载流子迁移率模型" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，该模型利用插值法对Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As材料体系在不同组分、温度和掺杂浓度下的迁移率进行近似拟合。-50 ℃下Al" }, { "name": "sub", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "1-" }, { "name": "italic", "data": [ { "name": "text", "data": "x" } ] } ] }, { "name": "text", "data": "As材料属性并不常见，因此推测低温下的迁移率计算偏差最终导致了仿真串联电阻略高于实验值。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "巴条" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I-V" } ] }, { "name": "text", "data": "仿真与实验结果对比(" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "=-50 ℃)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "Comparison of bar " }, { "name": "italic", "data": [ { "name": "text", "data": "L-I-V" } ] }, { "name": "text", "data": " simulation and experimental results(" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "text", "data": "=-50 ℃)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020397&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020409&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020398&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "巴条在-60~60 ℃范围内的输出功率-电流(" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I" } ] }, { "name": "text", "data": ")曲线如" }, { "name": "xref", "data": { "text": "图8", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8" } ] } }, { "name": "text", "data": "所示，可以看出，巴条在低温状态下(0 ℃以下)的" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I" } ] }, { "name": "text", "data": "曲线呈现非常明显的线性关系。当工作温度升高至0 ℃以上时，功率曲线出现不同程度的热翻转现象。根据仿真分析，由于工作温度升高，材料增益、载流子泄漏、内损耗和非辐射复合速率以指数级恶化，导致器件内部热损耗增加，热翻转现象变得明显。当注入电流为600 A时，输出功率从-60 ℃的808 W下降到60 ℃的311 W，下降差值达497 W，器件在高温下性能退化严重。这也证明了针对不同的工作温度，需要设计适合的外延结构的必要性。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "巴条在-60~60 ℃的输出功率对比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 8" } ], "title": [ { "name": "text", "data": "Comparison of output power of bars in the range of -60-60 ℃　" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020412&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020416&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020414&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "器件在-60~60 ℃范围内的工作电压如" }, { "name": "xref", "data": { "text": "图9", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9" } ] } }, { "name": "text", "data": "所示。随着温度降低，开启电压和串联电阻均呈现上升的趋势。根据InAlGaAs体材料带隙宽度公式：" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(8)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020417&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020418&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020399&type=" } } } ], "id": "DF8" } }, { "name": "text", "data": "温度降低会导致量子阱的带隙宽度变大，准费米能级差变大，进而导致开启电压增大。此外，由于异质结处能带的不匹配导致开启电压略高于准费米能级差，从而产生界面电压损失。根据文献[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]，在77~400 K范围内，载流子迁移率会随着温度的下降而升高，根据公式(6)，体电阻将相应地变小，因此仿真串联电阻随温度下降而减小。然而串联电阻实验值与之相反，Crump等对此也进行了相关研究，推测是波导区与有源区的界面电阻在低温下会升高，该效应超过了温度对体电阻的影响，从而引起器件串联电阻的仿真值与实验值不一致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。这一现象对于利用低温提高半导体激光器的电光转换效率不利，特别是当载流子泄漏损失很小时，继续降低温度反而会导致电光转换效率下降。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "-60~60 ℃范围内的工作电压对比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 9" } ], "title": [ { "name": "text", "data": "Comparison of working voltage in the range of-60-60 ℃" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020419&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020421&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020401&type=" } ] } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图10", "type": "fig", "rid": "F10", "data": [ { "name": "text", "data": "图10" } ] } }, { "name": "text", "data": "为-60~60 ℃范围内的电光转换效率曲线，可以看出效率随温度降低而增大的效应存在饱和。当工作温度从60 ℃降到-50 ℃时，最大电光转换效率从35.9%提高到73.5%；在-50 ℃之后再继续降低温度，功率升高的不明显，而相应的电压值在继续增大，导致最大电光转换效率反而降到73.2%。因此，为了提高巴条的输出功率和电光转换效率，温度并不是越低越好，温度过低对冷却液和中央冷机的要求也会提高，因此该器件最佳工作温度在-50 ℃，与最初的设计相吻合。" } ] }, { "name": "fig", "data": { "id": "F10", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图10" } ], "title": [ { "name": "text", "data": "-60~60 ℃范围内的电光转换效率对比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 10" } ], "title": [ { "name": "text", "data": "Comparison of electro-optical conversion efficiency in the range of-60-60 ℃" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020423&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020425&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020424&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "激光光谱随温度变化情况如" }, { "name": "xref", "data": { "text": "图11", "type": "fig", "rid": "F11", "data": [ { "name": "text", "data": "图11" } ] } }, { "name": "text", "data": "所示。中心波长随温度发生漂移，温度越高，禁带宽度越低，输出波长越长，在-50 ℃时中心波长为798.4 nm。当温度从-60 ℃升高到60 ℃，峰值波长从796.3 nm红移到824.8 nm，拟合的峰值波长温漂系数为0.248 nm/℃，其线性度在测试的整个温度范围内保持良好。当温度为60 ℃时，器件在600 A注入电流下" }, { "name": "italic", "data": [ { "name": "text", "data": "L-I" } ] }, { "name": "text", "data": "曲线接近热翻转状态，导致中心波长测试出现较大偏差。由于温度影响了量子阱中的载流子能级分布，光谱半高宽随温度升高而增大，从-60 ℃时的2.8 nm提高到60 ℃时的3.78 nm。" } ] }, { "name": "fig", "data": { "id": "F11", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图11" } ], "title": [ { "name": "text", "data": "电流600 A时光谱(a)和中心波长(b)随温度变化" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 11" } ], "title": [ { "name": "text", "data": "The spectra(a) and center wavelength(b) change with temperature at the injected current of 600 A" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020426&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020429&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020434&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "载流子限制效率分析" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "通过公式(1)、(2)，得出斜率效率的理论计算值，并与实验值比较，结果如" }, { "name": "xref", "data": { "text": "图12", "type": "fig", "rid": "F12", "data": [ { "name": "text", "data": "图12" } ] } }, { "name": "text", "data": "所示。斜率效率随温度变化的理论值和实验值趋势一致，都随着温度增加呈指数级下降；不同点在于理论计算值变化程度没有实验值大，在60 ℃时理论值为1.05 W/A，而实验值已经下降到了0.75 W/A。其差别主要由以下几方面造成：首先，高温下的功率曲线其热效应已经比较明显，表现为亚线性关系，即斜率效率的拟合值受采样电流区间的影响较大，这里统一采用100~400 A范围。因此高温下的外微分量子效率测量值比真实值偏小。但是阈值电流附近的功率曲线测量波动较大，如果缩小采样区间会导致计算误差变大。其次，理论计算值的温度是直接针对有源区的计算，而在实验过程中的温度是对冷媒的控制温度，并不能真实反映有源区的温度值。在注入电流增大的过程中，有源区的温度还会发生较为复杂的变化，同时温度升高会带来内部缺陷增多、材料增益下降、量子阱注入载流子浓度升高和辐射复合效率下降等负面影响，使得器件恶化。这些影响在仿真过程中都进行了简化处理，导致斜率效率理论值比实验值偏高。最后，在器件运行过程中，载流子限制能力处在一个动态平衡过程中，随着温度升高和注入电流增大，载流子限制能力都会下降，因此理论计算值更像是该动态过程中的初始值。随着温度升高，未转化为光的能量最终都会以热能的形式堆积在有源区，如果散热能力不足，这部分热量会使有源区温度明显升高；而有源区的温度升高会进一步降低器件电光转换效率，形成恶性循环。可以认为随着温度升高，最终稳定态下的载流子限制效率会比理论值下降明显得多。这也正是实验值与理论值在低温下较为吻合、而在高温下差别明显的原因之一。" } ] }, { "name": "fig", "data": { "id": "F12", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图12" } ], "title": [ { "name": "text", "data": "斜率效率的仿真值与实验值对比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 12" } ], "title": [ { "name": "text", "data": "Comparison of simulated and experimental values of slope efficiency" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020431&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020448&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=28020432&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文以低温下的高效率808 nm半导体激光器为研究对象，从理论上分析了量子阱载流子泄漏与温度和势垒高度的关系，针对-50 ℃工作温度优化了量子阱结构及其他外延结构，并完成了器件制备，测试了-60~60 ℃范围内器件输出功率、工作电压、电光转换效率和光谱等各项参数的变化趋势。巴条器件在600 A注入电流下输出功率达到799 W，此时的电光转换效率为71%，中心波长为798.4 nm；当注入电流为400 A，器件达到了最大的电光转换效率73.5%。测试结果表明，Al" }, { "name": "sub", "data": [ { "name": "text", "data": "0.25" } ] }, { "name": "text", "data": "Ga" }, { "name": "sub", "data": [ { "name": "text", "data": "0.75" } ] }, { "name": "text", "data": "As材料作为势垒层能确保半导体激光器在-50 ℃工作条件下载流子的高效率限制。载流子限制效率理论对于不同温度、不同波长、不同输出功率的半导体激光器的外延结构设计具有实际指导意义。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220025." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献：" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "袁庆贺" }, { "name": "text", "data": ", " }, { "name": "text", "data": "井红旗" }, { "name": "text", "data": ", " }, { "name": "text", "data": "张秋月" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "砷化镓基近红外大功率半导体激光器的发展及应用" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "激光与光电子学进展" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "56" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "): " }, { "name": "text", "data": "040003-1-14" }, { "name": "text", "data": "." } ], "title": "砷化镓基近红外大功率半导体激光器的发展及应用" }, { "lang": "en", "text": [ { "name": "text", "data": "YUAN Q H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JING H Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG Q Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Development and applications of GaAs-based near-infrared high power semiconductor laser" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Laser Optoelectron. Prog." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "56" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "): " }, { "name": "text", "data": "040003-1-14" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Development and applications of GaAs-based near-infrared high power semiconductor laser" } ] }, { "id": "R2", "label": "[2]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "陈良惠" }, { "name": "text", "data": ", " }, { "name": "text", "data": "杨国文" }, { "name": "text", "data": ", " }, { "name": "text", "data": "刘育衔" }, { "name": "text", "data": ". " }, { "name": "text", "data": "半导体激光器研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "中国激光" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "47" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "): " }, { "name": "text", "data": "0500001-1-19" }, { "name": "text", "data": "." } ], "title": "半导体激光器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "CHEN L H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YANG G W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIU Y X" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Development of semiconductor lasers" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Lasers" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "47" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "): " }, { "name": "text", "data": "0500001-1-19" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Development of semiconductor lasers" } ] }, { "id": "R3", "label": "[3]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "宁永强" }, { "name": "text", "data": ", " }, { "name": "text", "data": "陈泳屹" }, { "name": "text", "data": ", " }, { "name": "text", "data": "张俊" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "大功率半导体激光器发展及相关技术概述" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "光学学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "41" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "0114001-1-10" }, { "name": "text", "data": "." } ], "title": "大功率半导体激光器发展及相关技术概述" }, { "lang": "en", "text": [ { "name": "text", "data": "NING Y Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN Y Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Brief review of development and techniques for high power semiconductor lasers" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Acta Opt. Sinica" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "41" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "0114001-1-10" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Brief review of development and techniques for high power semiconductor lasers" } ] }, { "id": "R4", "label": "[4]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "王立军" }, { "name": "text", "data": ", " }, { "name": "text", "data": "宁永强" }, { "name": "text", "data": ", " }, { "name": "text", "data": "秦莉" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "大功率半导体激光器研究进展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "36" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "19" }, { "name": "text", "data": "." } ], "title": "大功率半导体激光器研究进展" }, { "lang": "en", "text": [ { "name": "text", "data": "WANG L J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NING Y Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "QIN L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Development of high power diode laser" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Lumin." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "36" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1" }, { "name": "text", "data": "-" }, { "name": "text", "data": "19" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Development of high power diode laser" } ] }, { "id": "R5", "label": "[5]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "李瑞冬" }, { "name": "text", "data": ", " }, { "name": "text", "data": "邹永刚" }, { "name": "text", "data": ", " }, { "name": "text", "data": "田锟" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "侧向耦合分布反馈半导体激光器光栅结构及耦合特性" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "42" }, { "name": "text", "data": "(" }, { "name": "text", "data": "12" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1921" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1927" }, { "name": "text", "data": "." } ], "title": "侧向耦合分布反馈半导体激光器光栅结构及耦合特性" }, { "lang": "en", "text": [ { "name": "text", "data": "LI R D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZOU Y G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TIAN K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Grating structure and coupling characteristics of laterally-coupled distributed feedback semiconductor lasers" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Lumin." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "42" }, { "name": "text", "data": "(" }, { "name": "text", "data": "12" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1921" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1927" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Grating structure and coupling characteristics of laterally-coupled distributed feedback semiconductor lasers" } ] }, { "id": "R6", "label": "[6]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "姚中辉" }, { "name": "text", "data": ", " }, { "name": "text", "data": "陈红梅" }, { "name": "text", "data": ", " }, { "name": "text", "data": "张子旸" }, { "name": "text", "data": ". " }, { "name": "text", "data": "基于双倾斜沟槽结构的O波段单纵模Fabry-Pérot激光器" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "42" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1804" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1809" }, { "name": "text", "data": "." } ], "title": "基于双倾斜沟槽结构的O波段单纵模Fabry-Pérot激光器" }, { "lang": "en", "text": [ { "name": "text", "data": "YAO Z H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN H M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG Z Y" }, { "name": "text", "data": ". " }, { "name": "text", "data": "O-band single longitudinal mode Fabry-Pérot laser based on double slanted slots structure" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Lumin." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "42" }, { "name": "text", "data": "(" }, { "name": "text", "data": "11" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1804" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1809" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "O-band single longitudinal mode Fabry-Pérot laser based on double slanted slots structure" } ] }, { "id": "R7", "label": "[7]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "郑权" }, { "name": "text", "data": ", " }, { "name": "text", "data": "赵岭" }, { "name": "text", "data": ", " }, { "name": "text", "data": "钱龙生" }, { "name": "text", "data": ". " }, { "name": "text", "data": "大功率二极管泵浦固体激光器的应用和发展" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "光学 精密工程" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2001" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "6" }, { "name": "text", "data": "-" }, { "name": "text", "data": "9" }, { "name": "text", "data": "." } ], "title": "大功率二极管泵浦固体激光器的应用和发展" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHENG Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHAO L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "QIAN L S" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Application and development of high power diode-pumped solid-state laser" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Opt. Precision Eng." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2001" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "): " }, { "name": "text", "data": "6" }, { "name": "text", "data": "-" }, { "name": "text", "data": "9" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Application and development of high power diode-pumped solid-state laser" } ] }, { "id": "R8", "label": "[8]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "VANLEEUWEN R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XIONG Y H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WATKINS L S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High power 808 nm VCSEL arrays for pumping of compact pulsed high energy Nd∶YAG lasers operating at 946 nm and 1 064 nm for blue and UV light generation" }, { "name": "text", "data": "[C]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Proceedings of SPIE" } ] }, { "name": "text", "data": " 7912, " }, { "name": "italic", "data": [ { "name": "text", "data": "Solid State Lasers" } ] }, { "name": "text", "data": " XX: " }, { "name": "italic", "data": [ { "name": "text", "data": "Technology and Devices, San Francisco" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2011" }, { "name": "text", "data": ": " }, { "name": "text", "data": "79120Z-1-7" }, { "name": "text", "data": "." } ], "title": "High power 808 nm VCSEL arrays for pumping of compact pulsed high energy Nd∶YAG lasers operating at 946 nm and 1 064 nm for blue and UV light generation" } ] }, { "id": "R9", "label": "[9]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SEBASTIAN J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HÜLSEWEDE R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "PIETRZAK A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Research on 9xx nm diode laser for direct and pumping applications" }, { "name": "text", "data": "[C]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Proceedings of SPIE" } ] }, { "name": "text", "data": " 9255, XX " }, { "name": "italic", "data": [ { "name": "text", "data": "International Symposium on High-power Laser Systems and Applications" } ] }, { "name": "text", "data": " 2014, " }, { "name": "italic", "data": [ { "name": "text", "data": "Chengdu" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ": " }, { "name": "text", "data": "92550Y-1-11" }, { "name": "text", "data": "." } ], "title": "Research on 9xx nm diode laser for direct and pumping applications" } ] }, { "id": "R10", "label": "[10]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BONI A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ARSLAN S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ERBERT G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Proceedings of SPIE" } ] }, { "name": "text", "data": " 11668, " }, { "name": "italic", "data": [ { "name": "text", "data": "High-power Diode Laser Technology" } ] }, { "name": "text", "data": " ⅪⅩ" }, { "name": "text", "data": ", " }, { "name": "text", "data": "California" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ": " }, { "name": "text", "data": "1166807-1-8" }, { "name": "text", "data": "." } ], "title": "Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers" } ] }, { "id": "R11", "label": "[11]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HASLER K H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "FREVERT C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CRUMP P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Numerical study of high-power semiconductor lasers for operation at sub-zero temperatures" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Semicond. Sci. Technol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "32" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "): " }, { "name": "text", "data": "045004" }, { "name": "text", "data": "." } ], "title": "Numerical study of high-power semiconductor lasers for operation at sub-zero temperatures" } ] }, { "id": "R12", "label": "[12]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BULASHEVICH K A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MYMRIN V F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KARPOV S Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Effect of free-carrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Semicond. Sci. Technol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2007" }, { "name": "text", "data": ", " }, { "name": "text", "data": "22" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "): " }, { "name": "text", "data": "502" }, { "name": "text", "data": "-" }, { "name": "text", "data": "510" }, { "name": "text", "data": "." } ], "title": "Effect of free-carrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes" } ] }, { "id": "R13", "label": "[13]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "RYUH Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HA K H" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Opt. Express" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2008" }, { "name": "text", "data": ", " }, { "name": "text", "data": "16" }, { "name": "text", "data": "(" }, { "name": "text", "data": "14" }, { "name": "text", "data": "): " }, { "name": "text", "data": "10849" }, { "name": "text", "data": "-" }, { "name": "text", "data": "10857" }, { "name": "text", "data": "." } ], "title": "Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes" } ] }, { "id": "R14", "label": "[14]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KANSKAR M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "EARLES T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GOODNOUGH T J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "73% CW power conversion efficiency at 50 W from 970 nm diode laser bars" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Electron. Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2005" }, { "name": "text", "data": ", " }, { "name": "text", "data": "41" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "): " }, { "name": "text", "data": "245" }, { "name": "text", "data": "-" }, { "name": "text", "data": "247" }, { "name": "text", "data": "." } ], "title": "73% CW power conversion efficiency at 50 W from 970 nm diode laser bars" } ] }, { "id": "R15", "label": "[15]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CAO C S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "FAN L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "AI I" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Recent development of high-power-efficiency 50-W CW TE/TM polarized 808-nm diode laser bar at Lasertel" }, { "name": "text", "data": "[C]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Proceedings of SPIE" } ] }, { "name": "text", "data": " 7583, " }, { "name": "italic", "data": [ { "name": "text", "data": "High-power Diode Laser Technology and Applications" } ] }, { "name": "text", "data": " Ⅷ, " }, { "name": "italic", "data": [ { "name": "text", "data": "San Francisco" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2010" }, { "name": "text", "data": ": " }, { "name": "text", "data": "75830L-1-6" }, { "name": "text", "data": "." } ], "title": "Recent development of high-power-efficiency 50-W CW TE/TM polarized 808-nm diode laser bar at Lasertel" } ] }, { "id": "R16", "label": "[16]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "宋云菲" }, { "name": "text", "data": ", " }, { "name": "text", "data": "王贞福" }, { "name": "text", "data": ", " }, { "name": "text", "data": "李特" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "808 nm半导体激光芯片电光转换效率的温度特性机理研究" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "物理学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "66" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "): " }, { "name": "text", "data": "104202-1-6" }, { "name": "text", "data": "." } ], "title": "808 nm半导体激光芯片电光转换效率的温度特性机理研究" }, { "lang": "en", "text": [ { "name": "text", "data": "SONG Y F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG Z F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficiency analysis of 808 nm laser diode array under different operating temperatures" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Acta Phys. Sinica" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "66" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "): " }, { "name": "text", "data": "104202-1-6" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Efficiency analysis of 808 nm laser diode array under different operating temperatures" } ] }, { "id": "R17", "label": "[17]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "FREVERT C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CRUMP P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BUGGE F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300 K" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Semicond. Sci. Technol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ", " }, { "name": "text", "data": "31" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "): " }, { "name": "text", "data": "025003-1-12" }, { "name": "text", "data": "." } ], "title": "The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300 K" } ] }, { "id": "R18", "label": "[18]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WANG Z F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YANG G W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High power, high efficiency continuous-wave 808 nm laser diode arrays" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Opt. Laser Technol." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "97" }, { "name": "text", "data": ": " }, { "name": "text", "data": "297" }, { "name": "text", "data": "-" }, { "name": "text", "data": "301" }, { "name": "text", "data": "." } ], "title": "High power, high efficiency continuous-wave 808 nm laser diode arrays" } ] }, { "id": "R19", "label": "[19]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GAPONTSEV V" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MOSHEGOV N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BEREZIN I" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly-efficient high-power pumps for fiber lasers" }, { "name": "text", "data": "[C]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Proceedings of SPIE" } ] }, { "name": "text", "data": " 10086, " }, { "name": "italic", "data": [ { "name": "text", "data": "High-power Diode Laser Technology" } ] }, { "name": "text", "data": " ⅩⅤ, " }, { "name": "italic", "data": [ { "name": "text", "data": "San Francisco" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ": " }, { "name": "text", "data": "1008604-1-10" }, { "name": "text", "data": "." } ], "title": "Highly-efficient high-power pumps for fiber lasers" } ] }, { "id": "R20", "label": "[20]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "FREVERT C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BUGGE F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KNIGGE S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "940 nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203K:analysis of remaining limits and path to higher efficiency and power at 200 K and 300 K" }, { "name": "text", "data": "[C]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Proceedings of SPIE" } ] }, { "name": "text", "data": " 9733, " }, { "name": "italic", "data": [ { "name": "text", "data": "High-power Diode Laser Technology and Applications" } ] }, { "name": "text", "data": " ⅪⅤ, " }, { "name": "italic", "data": [ { "name": "text", "data": "San Francisco" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ": " }, { "name": "text", "data": "97330L-1-13" }, { "name": "text", "data": "." } ], "title": "940 nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203K:analysis of remaining limits and path to higher efficiency and power at 200 K and 300 K" } ] }, { "id": "R21", "label": "[21]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "庄顺连" }, { "name": "text", "data": ". " }, { "name": "text", "data": "光子器件物理" }, { "name": "text", "data": "[M]. " }, { "name": "text", "data": "贾东方" }, { "name": "text", "data": ", " }, { "name": "text", "data": "王肇颖" }, { "name": "text", "data": ", " }, { "name": "text", "data": "桑梅" }, { "name": "text", "data": "，译. 第" }, { "name": "text", "data": "2" }, { "name": "text", "data": "版. " }, { "name": "text", "data": "北京" }, { "name": "text", "data": ": " }, { "name": "text", "data": "电子工业出版社" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2013" }, { "name": "text", "data": "." } ], "title": "光子器件物理" }, { "lang": "en", "text": [ { "name": "text", "data": "CHUANG S L" }, { "name": "text", "data": ". " }, { "name": "italic", "data": [ { "name": "text", "data": "Physics of Photanic Devices" } ] }, { "name": "text", "data": "[M]. " }, { "name": "text", "data": "JIA D F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG Z Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SANG M" }, { "name": "text", "data": ", trans. " }, { "name": "text", "data": "2" }, { "name": "text", "data": "nd ed. " }, { "name": "text", "data": "Beijing" }, { "name": "text", "data": ": " }, { "name": "text", "data": "Publishing House of Electronics Industry" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2013" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Physics of Photanic Devices" } ] }, { "id": "R22", "label": "[22]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZOU Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "OSINSKI J S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GRODZINSKI P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 μm compressively strained semiconductor lasers" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "IEEE J. Quantum Electron." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "1993" }, { "name": "text", "data": ", " }, { "name": "text", "data": "29" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "): " }, { "name": "text", "data": "1565" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1575" }, { "name": "text", "data": "." } ], "title": "Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 μm compressively strained semiconductor lasers" } ] }, { "id": "R23", "label": "[23]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "PETERS M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ROSSIN V" }, { "name": "text", "data": ", " }, { "name": "text", "data": "EVERETT M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-power high-efficiency laser diodes at JDSU" }, { "name": "text", "data": "[C]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Proceedings of SPIE" } ] }, { "name": "text", "data": " 6456, " }, { "name": "italic", "data": [ { "name": "text", "data": "High-power Diode Laser Technology and Applications" } ] }, { "name": "text", "data": " Ⅴ, " }, { "name": "italic", "data": [ { "name": "text", "data": "San Jose" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2007" }, { "name": "text", "data": ": " }, { "name": "text", "data": "64560G-1-11" }, { "name": "text", "data": "." } ], "title": "High-power high-efficiency laser diodes at JDSU" } ] }, { "id": "R24", "label": "[24]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SOTOODEH M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KHALID A H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "REZAZADEH A A" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Empirical low-field mobility model for Ⅲ-Ⅴ compounds applicable in device simulation codes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Appl. Phys." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2000" }, { "name": "text", "data": ", " }, { "name": "text", "data": "87" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "): " }, { "name": "text", "data": "2890" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2900" }, { "name": "text", "data": "." } ], "title": "Empirical low-field mobility model for Ⅲ-Ⅴ compounds applicable in device simulation codes" } ] }, { "id": "R25", "label": "[25]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "PIKHTIN N A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SLIPCHENKO S O" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SOKOLOVA Z N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Internal optical loss in semiconductor lasers" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Semiconductors" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2004" }, { "name": "text", "data": ", " }, { "name": "text", "data": "38" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "): " }, { "name": "text", "data": "360" }, { "name": "text", "data": "-" }, { "name": "text", "data": "367" }, { "name": "text", "data": "." } ], "title": "Internal optical loss in semiconductor lasers" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20220025", "clc": [ [ { "name": "text", "data": "TN248.4" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032(2022)05-0786-10", "citeme": [], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家自然科学基金（61504167）；陕西省自然科学基金（2019ZY-CXPT-03-05，2018JM6010，2015JQ6263）；陕西省科技厅人才项目（2017KJXX-72）；长春理工大学高功率半导体激光国家重点实验室基金资助项目" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by National Natural Science Foundation of China (61504167); Natural Science Foundation of Shaanxi Province (2019ZY-CXPT-03-05, 2018JM6010, 2015JQ6263); Talent Project of Science and Technology Department of Shaanxi Province (2017KJXX-72); Foundation of State Key Laboratory of High Power Semiconductor Laser of Changchun University of Science and Technology" } ] } ], "history": { "received": "2022-01-19", "revised": "2022-02-11", "opub": "2022-05-23" }, "copyright": { "data": [], "year": "2022" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "5", "volume": "43", "originalSource": [] }