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1.School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
2.State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China
3.College of Physics and Electronic Engineering, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Hainan Normal University, Haikou 571158, China
4.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China
Published:2022-05,
Received:19 January 2022,
Revised:11 February 2022,
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Cite this article
Shun-hua WU, Guo-jun LIU, Zhen-fu WANG, et al. Low Temperature 808 nm High Efficiency Semiconductor Laser. [J]. Chinese Journal of Luminescence 43(5):786-795(2022)
Shun-hua WU, Guo-jun LIU, Zhen-fu WANG, et al. Low Temperature 808 nm High Efficiency Semiconductor Laser. [J]. Chinese Journal of Luminescence 43(5):786-795(2022) DOI: 10.37188/CJL.20220025.
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