基于不同ZnSe壳层厚度的InP/ZnSe/ZnS量子点光电性能 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于不同ZnSe壳层厚度的InP/ZnSe/ZnS量子点光电性能" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "陈", "givenname": "祥", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHEN", "givenname": "Xiang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "陈祥(1997-)，男，河南驻马店人，硕士研究生，2019年于泉州师范学院获得学士学位，主要从事磷化铟量子点合成及其发光二极管制备的研究。E-mail: 466956846@qq.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724181&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724197&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724200&type=" } ], "data": [ [ { "name": "text", "data": "陈祥" }, { "name": "text", "data": "(1997-)，男，河南驻马店人，硕士研究生，2019年于泉州师范学院获得学士学位，主要从事磷化铟量子点合成及其发光二极管制备的研究。E-mail: " }, { "name": "text", "data": "466956846@qq.com" } ] ] } ], "email": "466956846@qq.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "赵", "givenname": "浩兵", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHAO", "givenname": "Hao-bing", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "罗", "givenname": "芷琪", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LUO", "givenname": "Zi-qi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "胡", "givenname": "海龙", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HU", "givenname": "Hai-long", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "郭", "givenname": "太良", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "GUO", "givenname": "Tai-liang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "福山", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Fu-shan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "*E-mail: fsli@fzu.edu.cn", "data": [ { "name": "text", "data": "*E-mail: fsli@fzu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "李福山(1978-)，男，福建莆田人，博士，研究员，博士生导师，2005 年于北京大学获得博士学位，主要从事纳米光电材料与器件的研究。 E-mail: fsli@fzu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724203&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724205&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724206&type=" } ], "data": [ [ { "name": "text", "data": "李福山" }, { "name": "text", "data": "(1978-)，男，福建莆田人，博士，研究员，博士生导师，2005 年于北京大学获得博士学位，主要从事纳米光电材料与器件的研究。 E-mail: " }, { "name": "text", "data": "fsli@fzu.edu.cn" } ] ] } ], "email": "fsli@fzu.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "福州大学　物理与信息工程学院，福建　福州　350108", "data": [ { "name": "text", "data": "福州大学　物理与信息工程学院，福建　福州　350108" } ] }, { "lang": "en", "label": "1", "text": "School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China", "data": [ { "name": "text", "data": "School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "磷化铟(InP)量子点(QDs)由于其不含重金属元素和出色的光电特性，在量子点发光二极管(QLED)领域引起了广泛关注。本文以ZnSe和ZnS作为壳层来制备绿色InP/ZnSe/ZnS QDs，通过调控ZnSe壳层的厚度得到不同发光性能的QDs。当Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比为1∶15时，InP/ZnSe/ZnS QDs的荧光发射峰为522 nm，半峰宽为45 nm，荧光量子效率高达86%。同时制备了基于不同ZnSe壳层厚度的QLED，并利用真空蒸发的方式去除QDs薄膜中残留的有机溶剂，避免了高温退火对QDs性能的破坏，最终得到稳定工作QLED器件，其最佳外量子效率为2.2%。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Indium phosphide(InP) quantum dots(QDs) have drawn much attention in quantum dots light-emitting diodes(QLED) owing to their heavy-metal-free components and outstanding optics and electricity properties. In this paper, green InP/ZnSe/ZnS QDs were prepared with ZnSe and ZnS as the shell layers, QDs with various luminescence properties obtained by regulating the thickness of the ZnSe shell layer. When the mass ratio of Se powder to Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " is 1∶15, the PL peak of InP/ZnSe/ZnS QDs is 522 nm, the half-peak width is 45 nm and the PLQY is as high as 86%. QLED based on different thicknesses of ZnSe shell layers was prepared, the residual organic solvent in the QDs films was removed by vacuum evaporation to avoid the destruction of QDs performance by high temperature annealing, and the best EQE of 2.2% was obtained for the QLED devices." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "磷化铟量子点" } ], [ { "name": "text", "data": "荧光量子效率" } ], [ { "name": "text", "data": "发光二极管" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "indium phosphide quantum dots" } ], [ { "name": "text", "data": "fluorescence quantum efficiency" } ], [ { "name": "text", "data": "light emitting diode" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "胶体量子点是一种零维的半导体材料，由于其独特的光学特性，如宽的激发谱和窄的发射谱、良好的光学稳定性以及高荧光量子效率，在发光二极管、太阳能电池及生物成像等领域都表现出了巨大的潜力，尤其在量子点发光二极管(QLED)领域的发展非常迅速" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5" ], "text": "1-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随着近些年QLED器件结构的优化和QDs合成技术的改进，目前基于Ⅱ-Ⅵ族元素构成的红、绿、蓝镉系QDs的发光二极管的最佳外量子效率(EQEs)已分别达到24.1%、27.6%、21.4%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R6", "R7" ], "text": "6-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。除此以外，钙钛矿QDs作为胶体半导体量子点材料领域的一颗新星，相应的QLED器件的最高EQE也超过了20%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然QLED的研究进展非常迅速，但镉系和钙钛矿量子点均含重金属元素(即Cd、Pb、Hg等)，重金属元素会严重破坏环境以及影响人体健康，因而限制了QLED进一步的开发和商业化应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "不含重金属元素的InP QDs由于发射波长覆盖了大多数可见光和近红外区域，被认为是最有前途的候选者，因此InP QDs的研究在显示领域具有重要意义。经过近些年的研究，InP QDs的合成工艺也取得了巨大进展。Jang通过加入氢氟酸来蚀刻磷InP核表面的氧化物，减少缺陷；Shen通过对InP核进行离子掺杂降低核壳间的晶格不匹配，这些都极大地提高了InP QDs的质量" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } } ], "rid": [ "R10", "R11", "R12" ], "text": "10-12", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但基于InP QDs的发光器件还需进一步研究。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文使用热注入法，通过在合成过程中调控Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比制备出不同ZnSe壳层厚度的绿色InP/ZnSe/ZnS QDs，研究了不同ZnSe壳层厚度对QDs光学性能的影响。实验结果表明当Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比为1∶15时制备的InP/ZnSe/ZnS QDs性能较好，其荧光发射峰为522nm,PLQY高达86%。同时改进QLED制备过程中的退火工艺，利用真空蒸发的方式去除QDs薄膜中残留的有机溶剂，最终得到基于InP/ZnSe/ZnS的QLED器件最佳EQE为2.2%。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "实验材料" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "实验材料：氯化铟(InCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ",99.999%)，碘化锌(ZnI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ",98%)，油胺(Oleylamine,OLA,80%~90%)，三(二甲胺基)膦 (DMA)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "P, 97%)，硒粉(Se, 99.999%),1-十二硫醇(DDT,99%)，三正辛基磷 (TOP, 97%)，硬脂酸锌(Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ",90%),1-十八烯(ODE,90%)，无水乙醇(C" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "H" }, { "name": "sub", "data": [ { "name": "text", "data": "6" } ] }, { "name": "text", "data": "O,AR)和丙酮(CH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "COCH" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ",98%),PEDOT∶PSS的水溶液(15 mg/mL),TFB的氯苯溶液(7 mg/mL),ZnMgO纳米颗粒分散在乙醇中(25 mg/mL)。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "绿色InP/ZnSe/ZnS QDs制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "利用高温热注入法制备InP/ZnSe/ZnS QDs，实验流程如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "所示。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "InP/ZnSe/ZnS QDs制备工艺流程图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "Schematic illustration of as-synthesized InP/ZnSe /ZnS QDs" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724224&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724215&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724213&type=" } ] } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2.1" } ], "title": [ { "name": "text", "data": "P、Se、Zn前驱体制备" } ], "level": "3", "id": "s2b1" } }, { "name": "p", "data": [ { "name": "text", "data": "P前驱体：将0.3 mL (DMA)" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "P溶解在1 mL OLA中，在40 ℃下搅拌20 min。Se前驱体：将0.1 g Se粉溶解在1 mL TOP中，并在40 ℃下搅拌20 min。Zn前驱体：将1.5 g Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "溶解在6 mL ODE中，并在40 ℃下搅拌20 min。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2.2" } ], "title": [ { "name": "text", "data": "绿色InP核制备" } ], "level": "3", "id": "s2b2" } }, { "name": "p", "data": [ { "name": "text", "data": "将0.34 mmol InCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和5 mL OLA加入三颈烧瓶中，并加入2.2 mmol ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为反应的催化剂。反应体系首先被抽成真空，并引入氮气，使反应体系处于无水氧环境。然后将反应体系在140 ℃下搅拌1 h，使InCl" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和ZnI" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "溶解在OLA溶剂中，并将温度提高到200 ℃。加入磷前驱体反应8 min得到InP核。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2.3" } ], "title": [ { "name": "text", "data": "绿色InP/ZnSe QDs制备" } ], "level": "3", "id": "s2b3" } }, { "name": "p", "data": [ { "name": "text", "data": "将Se前驱体加入到准备好的InP核溶液中，并将反应体系的温度提高到280 ℃，然后缓慢滴加Zn前驱体，反应进行1 h得到InP/ZnSe QDs。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2.4" } ], "title": [ { "name": "text", "data": "绿色InP/ZnSe/ZnS QDs制备" } ], "level": "3", "id": "s2b4" } }, { "name": "p", "data": [ { "name": "text", "data": "将InP/ZnSe QDs溶液的温度提高到300 ℃。首先加入1.5 mL DDT，然后再次缓慢滴加Zn前驱体，ZnS壳层生长1 h得到InP/ZnSe/ZnS QDs。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2.5" } ], "title": [ { "name": "text", "data": "InP/ZnSe/ZnS QDs纯化" } ], "level": "3", "id": "s2b5" } }, { "name": "p", "data": [ { "name": "text", "data": "将制备好的InP/ZnSe/ZnS QDs溶解在5 mL正辛烷中，以8 000 r/min离心5 min，以去除大颗粒杂质。将上清液与无水乙醇以1∶3的体积比混合，在11 000 r/min下离心8 min，去除游离的配体。离心后加入5 mL正辛烷溶解沉淀，然后加入15 mL丙酮，在11 000 r/min下离心8 min，用丙酮重复离心清洗两次，去除难以清洗的硬脂酸锌杂质。离心后将沉淀溶于正辛烷中，得到干净的InP/ZnSe/ZnS QDs。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.3" } ], "title": [ { "name": "text", "data": "QLED器件制备" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "QLED器件结构：氧化铟锡(ITO)/聚3,4-乙撑二氧噻吩(PEDOT-PSS)/聚［9,9-二辛基芴-共-N-［4-(3-甲基丙基)］-二苯基胺］(TFB)/InP QDs/ZnMgO/Ag，如" }, { "name": "xref", "data": { "text": "图2", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2" } ] } }, { "name": "text", "data": "所示。ITO玻璃基底使用前依次在异丙醇、丙酮和去离子水中超声清洗，每次10 min。将空穴注入层PEDOT∶PSS和空穴传输层TFB以3 000 r/min的转速旋涂到ITO玻璃基底上，时间为 50 s，然后在130 ℃下退火30 min。随后，将发光层InP/ZnSe/ZnS QDs和电子传输层ZnMgO以2 000 r/min的转速旋涂50 s；然后将样品置于真空仓中抽干表面溶剂；最后，在ZnMgO层上蒸镀出Ag电极得到QLED器件。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "QLED器件结构图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "Diagram of QLEDs" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724230&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724222&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724221&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "ZnSe壳层厚度对InP QDs光学性能的影响" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "ZnSe和ZnS作为宽带隙的材料通常作为QDs的壳层，在QDs壳层制备过程中，加入过量Zn离子更有利于壳层的均匀生长，减少核壳间晶格失配而产生的缺陷。本工作采取了这一策略，在合成过程中加入了过量的Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，且保持加入的Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "量为定值。在此基础上，通过调控Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比便可以制备不同ZnSe壳层厚度的InP/ZnSe/ZnS QDs。在Se-TOP中加入0,0.08,0.1,0.12,0.14 g的Se粉，此时Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比分别为0∶15,0.8∶15,1∶15,1.2∶15和1.4∶15。其中当Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比为0∶15时，InP/ZnS QDs的吸收光谱与荧光光谱图如" }, { "name": "xref", "data": { "text": "图3(a)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)" } ] } }, { "name": "text", "data": "所示，与" }, { "name": "xref", "data": { "text": "图3(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(b)" } ] } }, { "name": "text", "data": "中Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比为1∶15的InP/ZnSe/ZnS QDs相比，半峰宽增宽了10 nm。这是由于ZnS壳层和InP核之间的晶格失配度相对较大为7.7%，导致InP核与ZnS壳层间存在许多缺陷，而ZnSe壳层与InP核之间的晶格失配度为3.3%，使得InP核与ZnSe壳层能形成更好的接触" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图3(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(b)" } ] } }, { "name": "text", "data": "右上角的插图为溶液状态的InP/ZnSe/ZnS QDs在紫外灯下的荧光实物图，该方法制备的QDs可以很好地分散在正辛烷、正己烷和甲苯等有机溶剂中。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "InP/ZnS QDs(a)和InP/ZnSe/ZnS QDs(b)的吸收光谱和荧光光谱，插图为对应的荧光图像；不同ZnSe壳层厚度的InP/ZnSe/ZnS QDs的荧光光谱(c)、吸收光谱(d)、时间分辨荧光光谱(e)和荧光量子效率(f)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "UV-Vis absorption and PL spectra of InP/ZnS QDs(a) and InP/ZnSe/ZnS QDs(b), the inset shows the corresponding fluorescent images. PL spectra(c), UV-Vis absorption spectra(d), time-resolved fluorescence spectra(e) and PLQY(f) of InP/ZnSe/ZnS QDs with different ZnSe shell layer thicknesses." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724254&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724245&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724256&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "通过改变ZnSe壳层厚度可以制备出不同荧光发射峰的InP/ZnSe/ZnS QDs，荧光光谱如" }, { "name": "xref", "data": { "text": "图3(b)、(c)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(b)、(c)" } ] } }, { "name": "text", "data": "所示。当Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比为0.8∶15,1∶15,1.2∶15和1.4∶15时，对应的InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.08" } ] }, { "name": "text", "data": "/ZnS QDs、InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS QDs、InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.12" } ] }, { "name": "text", "data": " /ZnS QDs和InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.14" } ] }, { "name": "text", "data": "/ZnS QDs的荧光发射峰分别为518,522,533,546 nm，在其他合成条件不变的情况下，仅增加Se-TOP中Se粉的量，QDs的荧光发射峰会在一定范围内逐渐红移。这是由于ZnSe壳层厚度的增加会导致QDs对电子的束缚能力越来越弱，电子将更容易扩散到壳层中，从而导致荧光发射峰的红移。InP/ZnSe/ZnS QDs的吸收光谱如" }, { "name": "xref", "data": { "text": "图3(d)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(d)" } ] } }, { "name": "text", "data": "所示，大约在475 nm处出现特征峰，与发射峰相比有一定程度的蓝移，与斯托克斯位移中的描述一致" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。不同ZnSe壳层厚度的InP/ZnSe/ZnS QDs的荧光寿命分别为47.2,55.3,62.4,64.3 ns，均表现出了较长的荧光寿命，如" }, { "name": "xref", "data": { "text": "图3(e)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(e)" } ] } }, { "name": "text", "data": "所示。我们对不同ZnSe壳层厚度QDs的荧光量子效率(PLQY)进行测试，Se粉量为0.08,0.10,0.12,0.14 g时，QDs的PLQY分别为65.5%、86.2%、79.9%、58.3%；当没有ZnSe壳层时，QDs的PLQY仅为45%。从图中可以观察到随着ZnSe壳层厚度的增加，QDs的PLQY呈现先增加后减小的趋势。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "InP/ZnSe/ZnS QDs结构及形貌表征" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "当Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比为1∶15时，得到的QDs的荧光性能最高，因此对InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS QDs的结构和形貌进行表征。" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "为InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS QDs的X射线衍射图，根据X射线衍射图，QDs的3个衍射峰分别位于27.47°、45.63°和54.09°，分别对应于InP QDs闪锌矿结构的(111)、(220)和(311)平面，证明了InP QDs的成功制备。使用透射电子显微镜观察制备的QDs形貌，如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示。QDs的形状类似圆形，尺寸分布比较均匀，没有出现团簇现象，能很好地分散在有机溶剂中。左上角的插图是在高分辨显微镜下QDs的形貌，证明该方法制备的QDs结晶性良好。右下角的插图是QDs的粒径分布直方图，经过统计测量，QDs的平均直径约为6.7 nm。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS QDs的X射线衍射图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "XRD patterns of InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS QDs" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724260&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724251&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724262&type=" } ] } }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS QDs在透射电子显微镜下的形貌图，左上插图为高分辨透射电子显微镜形貌图，右下为粒径分布直方图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "TEM images of InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS QDs, the upper left inset shows the HRTEM image, and the lower right inset shows the histogram of particle size distribution." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724269&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724273&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724271&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "真空蒸发处理InP QDs薄膜对QLED器件性能的影响" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "在制备QLED器件前，我们研究了退火对QDs光电性能的影响。高温退火是制备QLED器件必要的一道工序，因为旋涂后的QDs薄膜内部残留难以挥发的有机溶剂，不去除会降低QLED器件的性能。QDs常用的溶剂为正辛烷，其沸点为125.6 ℃，需要在高温下才能将其完全去除；但是QDs在较高的温度下，其表面配体会被破坏，QDs表面的缺陷增多，导致QDs发光猝灭，降低QDs的光学性能，进而影响QLED器件的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } } ], "rid": [ "R16", "R17" ], "text": "16-17", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然使用双壳层对QDs进行包覆已经极大地提高了QDs的热稳定性，但是QDs的性能还是会受到影响。我们利用旋涂的方式制备InP/ZnSe/ZnS QDs薄膜来研究其热稳定性，如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "左上角插图所示，将QDs薄膜依次在不同的温度下进行退火处理，待降温后通过测量薄膜的荧光发射强度和PLQY来判断QDs的热稳定性。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "分别展示了QDs薄膜经过25,50,100,150,200 ℃退火处理后荧光强度的变化，可以发现QDs的荧光强度有较小范围内的衰减。同时还对不同温度退火的QDs薄膜进行PLQY测试，如" }, { "name": "xref", "data": { "text": "图7", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7" } ] } }, { "name": "text", "data": "所示，未经过处理的QDs薄膜的PLQY仅为18.6%，与QDs溶液的PLQY相差较大。这是由于薄膜状态下QDs间的距离较近，相邻的QDs间发生荧光共振能量转移所导致的。较小尺寸QDs的激发能会转移到处于基态的较大尺寸的QDs上，导致QDs薄膜的PLQY大幅度下降。当退火温度较低时，QDs薄膜的PLQY基本不变。使用较高温度处理后PLQY逐渐下降，当温度达到200 ℃时，冷却后的QDs薄膜的PLQY仅为15.4%。这说明高温退火的确会降低QDs薄膜的荧光性能。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "InP/ZnSe/ZnS QDs的热猝灭光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "Thermal burst spectra of InP/ZnSe/ZnS QDs" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724287&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724291&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724279&type=" } ] } }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "经过不同退火温度处理的QDs薄膜的PLQY" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "PLQY of QDs films after annealing at different temperatures" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724292&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724303&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724300&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "双壳层包覆的InP/ZnSe/ZnS QDs与文献中报到的QDs相比，已经具有很好的热稳定性，但是仍然会受到热猝灭效应的影响。我们采用一种真空蒸发的方式处理旋涂后的QDs薄膜，在低压状态下，正辛烷的沸点降低，在室温下便能完全从QDs薄膜中去除，且不会对QDs薄膜的性能造成破坏，也能进一步提高QLED器件的性能。为了进一步验证，我们分别制备了25 ℃真空蒸发和120 ℃高温退火的对比器件。" }, { "name": "xref", "data": { "text": "图8(a)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(a)" } ] } }, { "name": "text", "data": "为器件的能级结构图，PEDOT∶PSS和TFB作为器件的空穴注入和传输层、ZnMgO为电子传输层，电子和空穴从Ag阴极和ITO阳极在电压的作用下被传输到QDs层复合发光" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R18", "R19", "R20", "R21" ], "text": "18-21", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图8(b)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(b)" } ] } }, { "name": "text", "data": "是基于InP/ ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS QDs 器件电致发光(EL)光谱，与光致发光(PL)峰相比，EL光谱发光峰红移到529 nm,EL光谱的半峰宽为57 nm，比PL光谱的半峰宽高了12 nm。出现这种现象的原因是由于QDs薄膜中出现了荧光共振能量转移，以及在外电场的作用下发生的Stark效应所导致的" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } } ], "rid": [ "R22", "R23" ], "text": "22-23", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。如" }, { "name": "xref", "data": { "text": "图8(c)、(d)", "type": "fig", "rid": "F8", "data": [ { "name": "text", "data": "图8(c)、(d)" } ] } }, { "name": "text", "data": "所示，基于真空蒸发下处理的QDs薄膜的QLED器件最大外量子效率(EQE)可以达到2.2%，在7 V电压下器件的亮度为375 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "；而采用高温退火的QLED器件的最大EQE仅为0.95%，在7 V电压下器件的亮度为344 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，真空蒸发方式处理的QLED器件的EQE和亮度较高温处理的QLED器件均有一定程度的提高。这说明真空蒸发方式相比较高温退火处理InP/ZnSe/ZnS QDs薄膜在制备QLED器件时更具优势，不但提高了器件的性能，还具备安全便捷的优点。" } ] }, { "name": "fig", "data": { "id": "F8", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图8" } ], "title": [ { "name": "text", "data": "(a)QLED器件能级图；(b)InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnSQDs器件的EL光谱；25 ℃真空蒸发和120 ℃高温退火的QLED器件性能：外量子效率-电压(c)和亮度-电压(d)关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 8" } ], "title": [ { "name": "text", "data": "(a)Energy level diagram for QLED devices. (b)EL spectral of QLED devices. QLED device performance with vacuum evaporation at 25 ℃ and high temperature annealing at 120 ℃: (c)EQE " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " current density, (d)luminance " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " voltage." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724313&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724314&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724309&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在真空蒸发处理QLED器件的基础上，我们使用荧光量子效率较高的InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.08" } ] }, { "name": "text", "data": "/ZnS和InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.12" } ] }, { "name": "text", "data": "/ZnS QDs来制备QLED器件，与荧光量子效率最高的InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS QDs器件对比。" }, { "name": "xref", "data": { "text": "图9(a)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(a)" } ] } }, { "name": "text", "data": "是QLED器件EQE对比，器件的EQE与QDs的PLQY大小趋势成正比，PLQY最高的InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS QDs制备的QLED器件EQE最高为2.2%，基于InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.12" } ] }, { "name": "text", "data": "/ZnS和InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.08" } ] }, { "name": "text", "data": "/ZnS QDs的器件EQE分别为1.17%和0.94%。" }, { "name": "xref", "data": { "text": "图9(b)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(b)" } ] } }, { "name": "text", "data": "为器件的电流效率，大小趋势与EQE曲线一致。InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.1" } ] }, { "name": "text", "data": "/ZnS、InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.12" } ] }, { "name": "text", "data": "/ZnS和InP/ZnSe" }, { "name": "sub", "data": [ { "name": "text", "data": "0.08" } ] }, { "name": "text", "data": "/ZnS QDs器件在7 V电压下的亮度分别为374,237,555 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，如" }, { "name": "xref", "data": { "text": "图9(c)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(c)" } ] } }, { "name": "text", "data": "所示。" }, { "name": "xref", "data": { "text": "图9(d)", "type": "fig", "rid": "F9", "data": [ { "name": "text", "data": "图9(d)" } ] } }, { "name": "text", "data": "为QLED器件的电流密度，趋势同样与亮度曲线一致。" } ] }, { "name": "fig", "data": { "id": "F9", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图9" } ], "title": [ { "name": "text", "data": "基于不同ZnSe壳层厚度的InP/ZnSe/ZnS 的QLED器件性能。(a)外量子效率-电压关系；(b)电流效率-亮度关系；(c)亮度-电压关系；(d)电流密度-电压关系。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 9" } ], "title": [ { "name": "text", "data": "Performance of QLED devices based on different ZnSe shell layer thicknesses. (a)EQE " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " current density. (b)Current efficiency " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " current density. (c)Luminance " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " voltage. (d)Current density " }, { "name": "italic", "data": [ { "name": "text", "data": "versus" } ] }, { "name": "text", "data": " voltage." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724316&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724321&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=26724318&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用热注入法制备了InP/ZnSe/ZnS QDs，在量子点合成过程中，通过调控Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比可以获得不同ZnSe壳层厚度的QDs，并且Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "适当的比例能够使得ZnSe壳层均匀生长，使得量子点形状更加规则，减少ZnSe与ZnS壳层间的缺陷，提高量子点的荧光性能。其中当Se粉与Zn(St)" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的质量比为1∶15时制备的InP/ZnSe/ZnS QDs的PLQY高达86%，发光峰为522 nm，半峰宽为45 nm。同时通过研究InP/ZnSe/ZnS QDs热猝灭效应，发现传统的高温退火会破坏量子点薄膜，进而降低QLED器件的性能；而使用真空蒸发的方式去除QDs薄膜中残留的有机溶剂，可以有效地避免高温退火对QLED器件性能的破坏。在此基础上分别制备了基于不同ZnSe壳层厚度QDs的器件，最终得到QLED器件的最大EQE为2.2%。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220034." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献：" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KIM T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM K H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". 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