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Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses
Synthesis and Properties of Materials | Updated：2022-04-20
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Optoelectronic Properties of InP/ZnSe/ZnS Quantum Dots with Different ZnSe Shell Layer Thicknesses Enhanced Publication
- Chinese Journal of Luminescence Vol.43, Issue 4, (2022)
- DOI：10.37188/CJL.20220034 CLC： O482.31
Published：01 April 2022，
Received：24 January 2022，
Revised：11 February 2022
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Related Author
xiang CHEN
Fu-shan LI
Tai-liang GUO
Hai-long HU
Zi-qi LUO
Hao-bing ZHAO
Song-nan QU
Di LI
Related Institution
School of Physics and Information Engineering， Fuzhou University
Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau
Key Laboratory of Automobile Materials, College of Materials Science and Engineering, Jilin University
University of Chinese Academy of Sciences
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
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