基于TiO₂修饰层的量子点发光二极管设计及其性能 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层的量子点发光二极管设计及其性能" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Design and Performance of Quantum Dot Light-emitting Diode Based on TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " Modified Layer" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "刘", "givenname": "卫卫", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LIU", "givenname": "Wei-wei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp", "first-author" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "*E-mail: liuww@yctu.edu.cn", "data": [ { "name": "text", "data": "*E-mail: liuww@yctu.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "刘卫卫(1981-)，男，江苏淮安人，博士，副教授，2011年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事半导体和量子点发光材料与器件的研究。E-mail: liuww@yctu.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657181&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657187&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657192&type=" } ], "data": [ [ { "name": "text", "data": "刘卫卫" }, { "name": "text", "data": "(1981-)，男，江苏淮安人，博士，副教授，2011年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事半导体和量子点发光材料与器件的研究。E-mail: " }, { "name": "text", "data": "liuww@yctu.edu.cn" } ] ] } ], "email": "liuww@yctu.edu.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "孔", "givenname": "佑超", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "KONG", "givenname": "You-chao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "Yb87816@connect.um.edu.mo", "data": [ { "name": "text", "data": "Yb87816@connect.um.edu.mo" } ] } ], "bio": [ { "lang": "zh", "text": [ "孔佑超(1988-)，男，陕西西安人，博士，讲师，2021年于中国澳门大学获得博士学位，主要从事低微半导体发光器件和第一性原理计算相关的研究。E-mail: Yb87816@connect.um.edu.mo" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657196&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657199&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657203&type=" } ], "data": [ [ { "name": "text", "data": "孔佑超" }, { "name": "text", "data": "(1988-)，男，陕西西安人，博士，讲师，2021年于中国澳门大学获得博士学位，主要从事低微半导体发光器件和第一性原理计算相关的研究。E-mail: " }, { "name": "text", "data": "Yb87816@connect.um.edu.mo" } ] ] } ], "email": "Yb87816@connect.um.edu.mo", "deceased": false }, { "name": [ { "lang": "zh", "surname": "陈", "givenname": "小波", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHEN", "givenname": "Xiao-bo", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "胡", "givenname": "小艳", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "HU", "givenname": "Xiao-yan", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "苗", "givenname": "中正", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "MIAO", "givenname": "Zhong-zheng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "盐城师范学院　物理与电子工程学院，江苏　盐城　224007", "data": [ { "name": "text", "data": "盐城师范学院　物理与电子工程学院，江苏　盐城　224007" } ] }, { "lang": "en", "label": "1", "text": "Department of Physics and Electronic Engineering, Yancheng Teachers University, Yancheng 224007, China", "data": [ { "name": "text", "data": "Department of Physics and Electronic Engineering, Yancheng Teachers University, Yancheng 224007, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "量子点发光二极管(QLEDs)具有色饱和度和色纯度高等优点，在照明与显示领域具有广泛应用前景，成为发光领域研究的热点之一。由于器件采用多层结构，表面和界面问题成为制约QLEDs发展的一个棘手问题。本文使用原子层沉积技术在氧化锌(ZnO)电子传输层和量子点(QDs)发光层之间插入不同厚度的二氧化钛(TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")薄层，对ZnO和QDs发光层之间的界面进行修饰。发现插入0.270 nm的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "后，器件的漏电流降低约一个量级，激子的平均寿命从15.94 ns增加到16.61 ns，说明插入TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层可以有效降低QDs发光层中激子猝灭，从而提高器件在低驱动电压下的电流效率(约提高15%)。上述结果有望为QLEDs在照明和显示领域的产业化提供参考。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Due to high color saturation and high color purity, quantum dot(QD) light-emitting diodes(QLEDs) have become one of the hotspots in LEDs research for their potential application in lighting and display. Surface and interface issues have become a thorny issue which restricting the development of QLEDs with multilayer structure. In this paper, the interface between electron transport layer zinc oxide(ZnO) and QDs emitting layer was modified by inserting titanium dioxide(TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ") layers with different thickness based on atomic layer deposition(ALD) technology. After inserting 0.270 nm TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " modified layer, the leakage current of the QLEDs was significantly reduced about an order of magnitude, and the average lifetime of the excitons increased from 15.94 ns to 16.61 ns, indicating that the insertion of the TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " modified layer can effectively prevent the exciton quenching in QDs emitting layer, thereby enhancing the current efficiency of the QLEDs under low driving voltage(about increased 15%). The above results are expected to provide a reference for the industrialization of QLEDs in the field of lighting and display." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "量子点" } ], [ { "name": "text", "data": "发光二极管" } ], [ { "name": "text", "data": "二氧化钛" } ], [ { "name": "text", "data": "界面修饰" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "quantum dot" } ], [ { "name": "text", "data": "light-emitting diodes" } ], [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ], [ { "name": "text", "data": "interface modification" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "量子点发光二极管(QLEDs)具有光致发光量子产率高、色纯度高、成本低、制造工艺简单以及量子限域效应等优异特性，有望成为继有机发光二极管(OLEDs)之后具有广阔发展前景的照明和显示器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R1", "R2", "R3", "R4" ], "text": "1-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。近年来，通过优化量子点(QDs)材料和器件结构，QLEDs的性能得到很大提高，并且非常接近OLEDs的性能" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R5", "R6", "R7" ], "text": "5-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，QLEDs主要采用“三明治”结构，如“阴极/电子注入层/电子传输层/发光层/空穴传输层/空穴注入层/阳极”。在该结型器件中，各功能层之间的能带匹配度和界面结构对器件的光电性能有着重要的影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R8", "R9", "R10", "R11" ], "text": "8-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在典型的QLEDs结构中，氧化锌(ZnO)由于其较高的电子迁移率和匹配的能带结构被广泛用作电子传输层" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R12", "R13", "R14", "R15" ], "text": "12-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是，由于QDs的价带较深，空穴注入势垒较大，导致空穴注入效率较低；另外，电子的注入势垒远低于空穴注入势垒并且电子的迁移率高于空穴的迁移率。上述特性导致QDs中电子的积累，因此对器件的光电特性产生影响" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "R16", "R17", "R18" ], "text": "16-18", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通常有三种方法来改善电荷积累效应：(1)降低电子传输层的电子注入和输运能力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } } ], "rid": [ "R19", "R20", "R21", "R22" ], "text": "19-22", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(2)提高空穴传输层的空穴注入和输运能力" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } } ], "rid": [ "R23", "R24" ], "text": "23-24", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(3)对QDs发光层进行优化设计" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } } ], "rid": [ "R25", "R26" ], "text": "25-26", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前主要是利用氧锌镁(ZnMgO)、三氧化二铝(Al" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": ")、聚甲基丙烯酸甲酯(PMMA)或者聚乙氧基乙烯亚胺(PEIE)等对ZnO和QDs之间的界面进行修饰" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R10", "R11" ], "text": "10-11", "type": "bibr" } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，有效提高ZnO和QDs界面处的电子注入势垒，降低电子的注入效率，从而减小电子的积累，改善激子猝灭和提高电流效率。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "修饰层厚度对QLEDs光电性能影响较大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } } ], "rid": [ "R27", "R28" ], "text": "27-28", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，上述界面修饰层主要是通过旋涂法获得，该方法难以精确控制修饰层的厚度，因此，仍有必要寻找一种有效方法对修饰层的厚度进行精确控制。原子层沉积(ALD)技术是通过将气相前驱体源以脉冲形式交替地通入反应室中并以化学吸附和反应的方式在衬底上形成薄膜的一种技术。相对于其他沉积工艺，ALD技术在膜层的均匀性、覆盖率以及厚度控制等方面都具有显著优势" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。另外，作为一种n型材料，二氧化钛(TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")具有高折射率，是光波导材料的最佳候选者之一，可提高QLEDs的外量子效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。与ZnO相比，TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "具有更好的水氧稳定性和更高的导带位置，因此TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "被认为是电子传输层材料的一种新的选择" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电阻率较高，单独利用TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为电子传输层所制备的QLEDs的光电性能较差" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "34", "type": "bibr", "rid": "R34", "data": [ { "name": "text", "data": "34" } ] } } ], "rid": [ "R32", "R33", "R34" ], "text": "32-34", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。本文通过ALD技术在ZnO层上沉积不同生长周期(厚度)的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄层，利用TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "对ZnO和QDs发光层之间的界面进行修饰，在此基础上制备了基于TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰的QLEDs并对其光电特性和机理进行了研究。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "器件制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "首先将氧化铟锡(ITO)玻璃衬底依次用丙酮、乙醇和去离子水超声清洗15 min，用N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "吹干后，在紫外臭氧中处理8 min以获得亲水表面。然后立即将衬底转移到水和氧含量低于10" }, { "name": "sup", "data": [ { "name": "text", "data": "-7" } ] }, { "name": "text", "data": "(0.1 ppm)的手套箱中。取40 μL ZnO量子点胶体溶液(30 mg/mL)以不同转速(1 500,2 000,2 500 r/min)旋涂于ITO表面，旋涂时间60 s；接着在110 ℃下烘烤30 min，获得不同厚度的ZnO层。为采用不同厚度的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "对ZnO进行修饰，将涂有ZnO薄膜的ITO衬底转移到ALD反应室中，并采用不同生长周期(3,5,10)制备TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄层。接着取40 μL 8 mg/mL的CdSeS@ZnS红色量子点溶液滴在ZnO或TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "表面中心位置，以2 500 r/min旋涂60 s，并在80 ℃下烘烤30 min。最后将上述样品转移至热蒸发室中(背景压强为5×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa)依次沉积TCTA (35 nm)、MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": " (30 nm)和Al(100 nm)。最后，将QLEDs利用紫外胶和玻璃进行封装待测。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "采用热式ALD设备(YY-ALDT-100)，以四(二甲基氨基)钛和H" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "O分别作为Ti和O的前驱体源制备TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄层。Ti源脉冲时间和吹扫时间分别为50 ms和30 s,O源脉冲时间和吹扫时间分别为20 ms和30 s。反应腔壁和基底温度都为120 ℃。两种前驱体通过高纯N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "气(纯度为99.999%)交替送入反应室中。腔体压强为0.4 Pa。为获得不同厚度的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄层，沉积周期分别设为3,5,10。为估算修饰层的厚度，制备了生长周期为1 000的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜。通过扫描电子显微镜(SEM)测试得到其平均厚度约为53.97 nm，即一个周期沉积的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄膜的平均厚度约为0.054 nm。因此，当沉积周期为3,5,10时，TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的厚度分别约为0.162,0.270,0.540 nm。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.3" } ], "title": [ { "name": "text", "data": "材料与器件表征" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "利用SEM(Carl Zeiss，德国)测试各功能层的厚度。利用原子力显微镜(AFM,Bruker，德国)测试样品表面粗糙度。使用恒流源(2400型，Keithley，美国)结合亮度计(LS-160型，Konica Minolta，日本)测量器件的光电性能。样品的荧光衰减曲线由配备405 nm皮秒脉冲激光器的荧光光谱仪(FS5,Edinburgh Instruments，英国)进行测定。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "QLEDs的结构如" }, { "name": "xref", "data": { "text": "图1(a)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(a)" } ] } }, { "name": "text", "data": "所示，ITO作为衬底和阴极，ZnO作为电子传输层和空穴阻挡层。发光层采用CdSeS@ZnS红色量子点，其发光波长、荧光量子产率(PLQY)和半高宽分别为624 nm、96%和24 nm。利用热蒸发获得的MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "和TCTA分别作为空穴注入层和传输层。最后通过掩模热蒸发制备Al作为阳极。为研究ZnO和QDs发光层之间的界面修饰对QLEDs光电特性的影响，在两者之间插入一层薄的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层。QLEDs的能带结构如" }, { "name": "xref", "data": { "text": "图1(b)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(b)" } ] } }, { "name": "text", "data": "所示，插入一层薄TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层后，电子注入势垒有所增加，对电子的注入起到一定的阻挡作用，有利于缓解由于电荷的积累而导致的激子猝灭效应。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "基于TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰的QLEDs结构示意图(a)和能带结构图(b)，能级位置采用文献[" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "]、[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]、[" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "]、[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]和[" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "］中的数据。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "The schematic diagram(a) and energy band diagram(b) of TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-modified QLEDs, the positions of energy level were adopted from references [" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "], [" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "], [" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } }, { "name": "text", "data": "], [" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "] and [" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } }, { "name": "text", "data": "］." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657207&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657216&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657213&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为更好地研究TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰对QLEDs光电特性的影响，首先对ZnO层的厚度进行优化，获得具有优异光电特性的未修饰的器件。实验中分别采用1 500,2 000,2 500 r/min的转速制备ZnO层，并在此基础上制备QLEDs，相应器件分别标记为D1、D2和D3。随着转速增加，ZnO层厚度变小，即器件D1~D3中ZnO层的厚度逐渐减小。从" }, { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "中可以看出，器件D2具有相对高的电流效率。从" }, { "name": "xref", "data": { "text": "图2(b)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)" } ] } }, { "name": "text", "data": "可以发现所有器件的电流密度都随着电压增加而增加。当电压增加到2 V左右时，器件的电流密度迅速增加，器件达到开启状态，即器件开启电压约为2 V，这与已报道的结果接近" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } } ], "rid": [ "R9", "R10" ], "text": "9-10", "type": "bibr" } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。开启前，在相同电压下，器件D2的电流密度最小，说明器件D2具有小的漏电流，有利于器件电流效率的提高。从器件的亮度-电压特性曲线可以看出，具有相对薄的ZnO层的器件D2和D3的亮度较大。因此器件D2具有相对高的电流效率。上述结果说明，利用2 000 r/min转速获得的ZnO层制备的QLEDs具有较好的光电性能。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "在不同ZnO旋涂速率下，QLEDs的电流效率随电流密度(a)以及电流密度和亮度随电压的变化曲线(b)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "Current efficiency-current density(a) and current density and luminance-voltage(b) curves for QLEDs under different spin-coating rates of ZnO" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657220&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657228&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657225&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为研究TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰对QLEDs光电特性的影响，在ZnO电子传输层上利用ALD技术沉积不同厚度的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层。从" }, { "name": "xref", "data": { "text": "图3(a)、(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)、(b)" } ] } }, { "name": "text", "data": "可以看出，虽然表面形貌变化不明显，但是TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰后，薄膜表面形貌仍可观察到略有变平的趋势而且保持较好的均匀性，说明在ZnO层上获得了均匀的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "薄层。未修饰的QLEDs以及分别利用3,5,10个生长周期所制备的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "进行修饰的QLEDs分别标记为D4(同D2)、D5、D6和D7。从" }, { "name": "xref", "data": { "text": "图4(a)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)" } ] } }, { "name": "text", "data": "可以看出，与未修饰的器件D4相比，采用5个周期TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰的器件D6在低电流密度区域的电流效率明显提高，电流效率提高了近15%；当采用10个周期的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层后，器件D5的电流效率明显降低，且与峰值电流效率相对应的电流密度明显增加。因此，加入适当厚度的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层对改善器件在低电压驱动下的电流效率是有利的。从" }, { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "可以看出，随着TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "生长周期数的增加，与未修饰的器件D4相比，修饰后的器件的漏电流在低电压下先变小后增加。当器件开启后，与D4相比，D5和D6的电流密度基本不变，而D7的电流密度明显降低。当厚度增加时，修饰层引入的串联电阻变大，导致开启后的电流密度显著下降。由于串联电阻增加，引起开启电压增加和亮度明显下降。由于器件的电流效率是亮度和电流密度比值，因此在ZnO和QDs发光层之间插入适当厚度的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层，可以使亮度和电流密度的比值达到最优，有效提高器件的电流效率。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "ITO/ZnO(a)和ITO/ZnO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(b)的表面SEM图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 3" } ], "title": [ { "name": "text", "data": "SEM images of ITO/ZnO(a) and ITO/ZnO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(b)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657235&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657240&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657237&type=" } ] } }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "在不同TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "生长周期下，QLEDs的电流效率随电流密度(a)以及电流密度和亮度随电压的变化曲线 (b)。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "Current efficiency-current density(a) and current density and luminance-voltage(b) curves for QLEDs under different deposition cycles of TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657244&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657254&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657249&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为深入分析TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰对界面和QDs发光层的影响，对TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰前后的QDs发光层表面粗糙度和激子平均寿命进行测试。从" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "可以看出，TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰前后，电子传输层和QDs发光层的表面粗糙度变化都在0.15 nm左右，说明TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的插入对电子传输层和QDs层表面形貌的影响较小，这与插入的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "很薄(0.270 nm)有关。" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "为TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰前后QDs发光层的荧光衰减曲线，激发波长为405 nm，监测波长为624 nm。激子的平均寿命由修饰前的15.94 ns增加到修饰后的16.61 ns。上述结果说明，在ZnO和QDs发光层之间插入一层薄的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "层有助于降低ZnO对QDs发光层中激子的猝灭作用，对器件电流效率的提高是有利的。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "ITO/ZnO(a)、ITO/ZnO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "=5)(b)、ITO/ZnO/QDs(c)和ITO/ZnO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "=5)/QDs(d)的AFM图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "AFM images of the ITO/ZnO(a), ITO/ZnO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "=5)(b), ITO/ZnO/QDs(c) and ITO/ZnO/TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "(" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "text", "data": "=5)/QDs(d)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657256&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657264&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657261&type=" } ] } }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰前后量子点发光层的荧光衰减曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "Luminescence decay curves of QDs on ZnO layer with and without TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " modification layers" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657269&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657278&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657274&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为排除因插入TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层后器件总厚度的增加而对器件光电特性产生的影响，分别制备了以下4个QLEDs:D8——厚的ZnO层、D9——相对薄的ZnO层、D10——在相对薄的ZnO层基础上再沉积一层薄的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层、D11——只含TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层，其中保持D8和D10总的厚度相同，如" }, { "name": "xref", "data": { "text": "图7(a)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)" } ] } }, { "name": "text", "data": "插图所示。从" }, { "name": "xref", "data": { "text": "图7(a)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(a)" } ] } }, { "name": "text", "data": "可以看出，在总厚度相同情况下(D8和D10)，含有TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层的D10具有相对高的电流效率，说明器件性能的改善不是由厚度的增加引起的。与未修饰的D9相比，D10在低电流密度下具有较高的电流效率，说明器件光电性能的改善是由插入的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层所引起的。TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "作为单独电子传输层使用时，由于具有相对高的电阻率，使得D11的电流效率相对较低。从" }, { "name": "xref", "data": { "text": "图7(b)", "type": "fig", "rid": "F7", "data": [ { "name": "text", "data": "图7(b)" } ] } }, { "name": "text", "data": "可以看出，D10器件具有较低的漏电流，而且开启后电流密度与D8相近并且高于D9，说明在ZnO和QDs层之间插入一层薄的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层可以有效改善器件的界面特性，同时对载流子的输运特性影响较小。" } ] }, { "name": "fig", "data": { "id": "F7", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图7" } ], "title": [ { "name": "text", "data": "D8～D11的电流效率随电流密度(a)以及电流密度和亮度随电压的变化曲线(b)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 7" } ], "title": [ { "name": "text", "data": "Current efficiency-current density(a) and current density and luminance-voltage(b) curves for D8—D11" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657282&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657288&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=25657285&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用溶液法和ALD技术相结合的方法制备了基于TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰的QLEDs。利用ALD技术精确控制TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层的厚度。发现当插入0.270 nm的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层后，QDs发光层中激子的平均寿命从15.94 ns增加到16.61 ns，器件在低驱动电压下的电流效率提高了近15%。表明插入适当厚度的TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰层可以有效改善ZnO和QDs层之间的界面态，从而提高激子的平均寿命、降低器件的漏电流和提高器件的电流效率。该方法有望为QLEDs在照明和显示领域的产业化提供参考。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20220002." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献：" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MOON H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEE C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEE W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Stability of quantum dots,quantum dot films,and quantum dot light-emitting diodes for display applications" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "31" }, { "name": "text", "data": "(" }, { "name": "text", "data": "34" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1804294-1-14" }, { "name": "text", "data": "." } ], "title": "Stability of quantum dots,quantum dot films,and quantum dot light-emitting diodes for display applications" } ] }, { "id": "R2", "label": "[2]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "HUANG Y G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HSIANG E L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "DENG M Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Mini-LED,Micro-LED and OLED displays:present status and future perspectives" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Light" } ] }, { "name": "text", "data": ": " }, { "name": "italic", "data": [ { "name": "text", "data": "Sci. Appl." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": ":" }, { "name": "text", "data": "105-1-16" }, { "name": "text", "data": "." } ], "title": "Mini-LED,Micro-LED and OLED displays:present status and future perspectives" } ] }, { "id": "R3", "label": "[3]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SUN Y Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JIANG Y B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SUN X W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Beyond OLED:efficient quantum dot light-emitting diodes for display and lighting application" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chem. Rec." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "19" }, { "name": "text", "data": "(" }, { "name": "text", "data": "8" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1729" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1752" }, { "name": "text", "data": "." } ], "title": "Beyond OLED:efficient quantum dot light-emitting diodes for display and lighting application" } ] }, { "id": "R4", "label": "[4]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "赵越" }, { "name": "text", "data": ", " }, { "name": "text", "data": "高旭鹏" }, { "name": "text", "data": ", " }, { "name": "text", "data": "路坡" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "量子点白光LEDs及其在智慧照明中的应用" }, { "name": "text", "data": " [J]. " }, { "name": "text", "data": "液晶与显示" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "36" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "187" }, { "name": "text", "data": "-" }, { "name": "text", "data": "202" }, { "name": "text", "data": "." } ], "title": "量子点白光LEDs及其在智慧照明中的应用" }, { "lang": "en", "text": [ { "name": "text", "data": "ZHAO Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GAO X P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LU P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Quantum dot-based white LEDs and their applications of SMART lighting" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Liq. Cryst. Disp." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "36" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "187" }, { "name": "text", "data": "-" }, { "name": "text", "data": "202" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Quantum dot-based white LEDs and their applications of SMART lighting" } ] }, { "id": "R5", "label": "[5]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SONG J J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG O Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHEN H B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Over 30% external quantum efficiency light-emitting diodes by engineering quantum dot-assisted energy level match for hole transport layer" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Funct. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "29" }, { "name": "text", "data": "(" }, { "name": "text", "data": "33" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1808377-1-9" }, { "name": "text", "data": "." } ], "title": "Over 30% external quantum efficiency light-emitting diodes by engineering quantum dot-assisted energy level match for hole transport layer" } ] }, { "id": "R6", "label": "[6]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "FU Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JIANG W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly efficient and fully solution-processed inverted light-emitting diodes with charge control interlayers" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Appl. Mater. Interfaces" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "10" }, { "name": "text", "data": "(" }, { "name": "text", "data": "20" }, { "name": "text", "data": "):" }, { "name": "text", "data": "17295" }, { "name": "text", "data": "-" }, { "name": "text", "data": "17300" }, { "name": "text", "data": "." } ], "title": "Highly efficient and fully solution-processed inverted light-emitting diodes with charge control interlayers" } ] }, { "id": "R7", "label": "[7]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SU Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SUN Y Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficient and color stable white quantum-dot light-emitting diodes with external quantum efficiency over 23%" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Opt. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": "(" }, { "name": "text", "data": "16" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1800354-1-8" }, { "name": "text", "data": "." } ], "title": "Efficient and color stable white quantum-dot light-emitting diodes with external quantum efficiency over 23%" } ] }, { "id": "R8", "label": "[8]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DONG J Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "NG K W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SONG Y M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Observation and suppression of stacking interface states in sandwich-structured quantum dot light-emitting diodes" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Appl. Mater. Interfaces" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "13" }, { "name": "text", "data": "(" }, { "name": "text", "data": "47" }, { "name": "text", "data": "):" }, { "name": "text", "data": "56630" }, { "name": "text", "data": "-" }, { "name": "text", "data": "56637" }, { "name": "text", "data": "." } ], "title": "Observation and suppression of stacking interface states in sandwich-structured quantum dot light-emitting diodes" } ] }, { "id": "R9", "label": "[9]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SU Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN S M" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Suppressing Förster resonance energy transfer in close-packed quantum-dot thin film:toward efficient quantum-dot light-emitting diodes with external quantum efficiency over 21.6%" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Opt. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1902092-1-7" }, { "name": "text", "data": "." } ], "title": "Suppressing Förster resonance energy transfer in close-packed quantum-dot thin film:toward efficient quantum-dot light-emitting diodes with external quantum efficiency over 21.6%" } ] }, { "id": "R10", "label": "[10]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "TIAN F Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHU Y B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XU Z W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Achieving highly efficient and stable quantum dot light-emitting diodes with interface modification" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "IEEE Electron Device Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "41" }, { "name": "text", "data": "(" }, { "name": "text", "data": "9" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1384" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1387" }, { "name": "text", "data": "." } ], "title": "Achieving highly efficient and stable quantum dot light-emitting diodes with interface modification" } ] }, { "id": "R11", "label": "[11]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "XUE X L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "DONG J Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG S P" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Degradation of quantum dot light emitting diodes,the case under a low driving level" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Mater. Chem." } ] }, { "name": "text", "data": " C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "):" }, { "name": "text", "data": "2014" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2018" }, { "name": "text", "data": "." } ], "title": "Degradation of quantum dot light emitting diodes,the case under a low driving level" } ] }, { "id": "R12", "label": "[12]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KIRKWOOD N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SINGH B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MULVANEY P" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Enhancing quantum dot led efficiency by tuning electron mobility in the ZnO electron transport layer" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Mater. Interfaces" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ", " }, { "name": "text", "data": "3" }, { "name": "text", "data": "(" }, { "name": "text", "data": "22" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1600868-1-7" }, { "name": "text", "data": "." } ], "title": "Enhancing quantum dot led efficiency by tuning electron mobility in the ZnO electron transport layer" } ] }, { "id": "R13", "label": "[13]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YU J H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HEO S B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHIN J S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Improvement of the electron transport behavior in quantum-dot light-emitting diodes using a low-temperature processable ZnO" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Curr. Appl. Phys." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "20" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "366" }, { "name": "text", "data": "-" }, { "name": "text", "data": "370" }, { "name": "text", "data": "." } ], "title": "Improvement of the electron transport behavior in quantum-dot light-emitting diodes using a low-temperature processable ZnO" } ] }, { "id": "R14", "label": "[14]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZAIATS G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "IKEDA S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KAMAT P V" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Optimization of the electron transport layer in quantum dot light-emitting devices" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "NPG Asia Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "12" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "57-1-6" }, { "name": "text", "data": "." } ], "title": "Optimization of the electron transport layer in quantum dot light-emitting devices" } ] }, { "id": "R15", "label": "[15]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "马航" }, { "name": "text", "data": ", " }, { "name": "text", "data": "李邓化" }, { "name": "text", "data": ", " }, { "name": "text", "data": "陈雯柏" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "氧化锌作为电子传输层的量子点发光二极管" }, { "name": "text", "data": " [J]. " }, { "name": "text", "data": "发光学报" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "38" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "):" }, { "name": "text", "data": "507" }, { "name": "text", "data": "-" }, { "name": "text", "data": "513" }, { "name": "text", "data": "." } ], "title": "氧化锌作为电子传输层的量子点发光二极管" }, { "lang": "en", "text": [ { "name": "text", "data": "MA H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI D H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN W B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Quantum dot light emitting diodes with ZnO electron transport layer" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. J. Lumin." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "38" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "):" }, { "name": "text", "data": "507" }, { "name": "text", "data": "-" }, { "name": "text", "data": "513" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Quantum dot light emitting diodes with ZnO electron transport layer" } ] }, { "id": "R16", "label": "[16]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DAI X L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG Z X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JIN Y Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Solution-processed,high-performance light-emitting diodes based on quantum dots" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nature" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "515" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7525" }, { "name": "text", "data": "):" }, { "name": "text", "data": "96" }, { "name": "text", "data": "-" }, { "name": "text", "data": "99" }, { "name": "text", "data": "." } ], "title": "Solution-processed,high-performance light-emitting diodes based on quantum dots" } ] }, { "id": "R17", "label": "[17]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "IVELAND J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MARTINELLI L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "PERETTI J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection:identification of the dominant mechanism for efficiency droop" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Phys. Rev. Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2013" }, { "name": "text", "data": ", " }, { "name": "text", "data": "110" }, { "name": "text", "data": "(" }, { "name": "text", "data": "17" }, { "name": "text", "data": "):" }, { "name": "text", "data": "177406-1-5" }, { "name": "text", "data": "." } ], "title": "Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection:identification of the dominant mechanism for efficiency droop" } ] }, { "id": "R18", "label": "[18]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BOZYIGIT D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YAREMA O" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WOOD V" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Origins of low quantum efficiencies in quantum dot LEDs" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Funct. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2013" }, { "name": "text", "data": ", " }, { "name": "text", "data": "23" }, { "name": "text", "data": "(" }, { "name": "text", "data": "24" }, { "name": "text", "data": "):" }, { "name": "text", "data": "3024" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3029" }, { "name": "text", "data": "." } ], "title": "Origins of low quantum efficiencies in quantum dot LEDs" } ] }, { "id": "R19", "label": "[19]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SUN Y Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG W G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-performance quantum dot light-emitting diodes based on Al-doped ZnO nanoparticles electron transport layer" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Appl. Mater. Interfaces" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "10" }, { "name": "text", "data": "(" }, { "name": "text", "data": "22" }, { "name": "text", "data": "):" }, { "name": "text", "data": "18902" }, { "name": "text", "data": "-" }, { "name": "text", "data": "18909" }, { "name": "text", "data": "." } ], "title": "High-performance quantum dot light-emitting diodes based on Al-doped ZnO nanoparticles electron transport layer" } ] }, { "id": "R20", "label": "[20]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "QU X W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LYU Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly efficient transparent quantum-dot light-emitting diodes based on inorganic double electron-transport layers" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Photonics Res." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1979" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1983" }, { "name": "text", "data": "." } ], "title": "Highly efficient transparent quantum-dot light-emitting diodes based on inorganic double electron-transport layers" } ] }, { "id": "R21", "label": "[21]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "ZHANG M R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GUO F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHOU Q Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Enhanced performance through trap states passivation in quantum dot light emitting diode" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Lumin." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "234" }, { "name": "text", "data": ":" }, { "name": "text", "data": "117946" }, { "name": "text", "data": "." } ], "title": "Enhanced performance through trap states passivation in quantum dot light emitting diode" } ] }, { "id": "R22", "label": "[22]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "YE Y L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YANG Z X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHAO Z W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficient multi-shell CuInS" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/ZnS/ZnS quantum-dots based light-emitting diodes:time-controlled synthesis of quantum-dots and carrier balance effects of PEI" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Opt. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "106" }, { "name": "text", "data": ":" }, { "name": "text", "data": "109926-1-10" }, { "name": "text", "data": "." } ], "title": "Efficient multi-shell CuInS2/ZnS/ZnS quantum-dots based light-emitting diodes:time-controlled synthesis of quantum-dots and carrier balance effects of PEI" } ] }, { "id": "R23", "label": "[23]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KWAK J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BAE W K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEE D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Bright and efficient full-color colloidal quantum dot light-emitting diodes using an inverted device structure" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nano Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2012" }, { "name": "text", "data": ", " }, { "name": "text", "data": "12" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "):" }, { "name": "text", "data": "2362" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2366" }, { "name": "text", "data": "." } ], "title": "Bright and efficient full-color colloidal quantum dot light-emitting diodes using an inverted device structure" } ] }, { "id": "R24", "label": "[24]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CARUGE J M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HALPERT J E" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WOOD V" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Colloidal quantum-dot light-emitting diodes with metal-oxide charge transport layers" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Photonics" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2008" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "):" }, { "name": "text", "data": "247" }, { "name": "text", "data": "-" }, { "name": "text", "data": "250" }, { "name": "text", "data": "." } ], "title": "Colloidal quantum-dot light-emitting diodes with metal-oxide charge transport layers" } ] }, { "id": "R25", "label": "[25]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "CAO W R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XIANG C Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YANG Y X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly stable QLEDs with improved hole injection via quantum dot structure tailoring" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Commun." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "2608-1-6" }, { "name": "text", "data": "." } ], "title": "Highly stable QLEDs with improved hole injection via quantum dot structure tailoring" } ] }, { "id": "R26", "label": "[26]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "SHEN H B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CAO W R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHEWMON N T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-efficiency,low turn-on voltage blue-violet quantum-dot-based light-emitting diodes" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nano Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "15" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1211" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1216" }, { "name": "text", "data": "." } ], "title": "High-efficiency,low turn-on voltage blue-violet quantum-dot-based light-emitting diodes" } ] }, { "id": "R27", "label": "[27]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "JI W Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIU S H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Ultrasonic spray processed,highly efficient all-inorganic quantum-dot light-emitting diodes" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Photonics" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "4" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1271" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1278" }, { "name": "text", "data": "." } ], "title": "Ultrasonic spray processed,highly efficient all-inorganic quantum-dot light-emitting diodes" } ] }, { "id": "R28", "label": "[28]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "MARUS M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XIA Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHONG H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Bright infrared quantum dot light-emitting diodes through efficient suppressing of electrons" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Phys. Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "116" }, { "name": "text", "data": "(" }, { "name": "text", "data": "19" }, { "name": "text", "data": "):" }, { "name": "text", "data": "191103-1-6" }, { "name": "text", "data": "." } ], "title": "Bright infrared quantum dot light-emitting diodes through efficient suppressing of electrons" } ] }, { "id": "R29", "label": "[29]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "GUZIEWICZ E" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GODLEWSKI M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KRAJEWSKI T A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "ZnO by ALD-advantages of the material grown at low temperature" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Acta Phys. Pol." } ] }, { "name": "text", "data": " A" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2009" }, { "name": "text", "data": ", " }, { "name": "text", "data": "116" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "):" }, { "name": "text", "data": "814" }, { "name": "text", "data": "-" }, { "name": "text", "data": "817" }, { "name": "text", "data": "." } ], "title": "ZnO by ALD-advantages of the material grown at low temperature" } ] }, { "id": "R30", "label": "[30]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "KIM M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEE N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "YANG J H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-efficiency quantum dot light-emitting diodes based on Li-doped TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " nanoparticles as an alternative electron transport layer" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nanoscale" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "13" }, { "name": "text", "data": "(" }, { "name": "text", "data": "5" }, { "name": "text", "data": "):" }, { "name": "text", "data": "2838" }, { "name": "text", "data": "-" }, { "name": "text", "data": "2842" }, { "name": "text", "data": "." } ], "title": "High-efficiency quantum dot light-emitting diodes based on Li-doped TiO2 nanoparticles as an alternative electron transport layer" } ] }, { "id": "R31", "label": "[31]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "TAN W L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BOWRING A R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BABADI A S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Interfacing low-temperature atomic layer deposited TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " electron transport layers with metal electrodes" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Mater. Interfaces" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "7" }, { "name": "text", "data": "(" }, { "name": "text", "data": "8" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1902054-1-6" }, { "name": "text", "data": "." } ], "title": "Interfacing low-temperature atomic layer deposited TiO2 electron transport layers with metal electrodes" } ] }, { "id": "R32", "label": "[32]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "BANG S Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "FAN X B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JUNG S M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly stable and scalable blue QD-LED via an evaporated TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " thin film as an electron transport layer" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Opt. Mater." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "21" }, { "name": "text", "data": "):" }, { "name": "text", "data": "2001172-1-8" }, { "name": "text", "data": "." } ], "title": "Highly stable and scalable blue QD-LED via an evaporated TiO2 thin film as an electron transport layer" } ] }, { "id": "R33", "label": "[33]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "WEI S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MIAO J H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHI Q W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Stable and efficient QLEDs with crystallographic TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " as the electron transportation layer and improved carrier transportation by chlorination" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Mater. Sci." } ] }, { "name": "text", "data": ": " }, { "name": "italic", "data": [ { "name": "text", "data": "Mater. Electron." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "32" }, { "name": "text", "data": "(" }, { "name": "text", "data": "8" }, { "name": "text", "data": "):" }, { "name": "text", "data": "9795" }, { "name": "text", "data": "-" }, { "name": "text", "data": "9803" }, { "name": "text", "data": "." } ], "title": "Stable and efficient QLEDs with crystallographic TiO2 as the electron transportation layer and improved carrier transportation by chlorination" } ] }, { "id": "R34", "label": "[34]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "XU W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JI W Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JING P T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficient inverted quantum-dot light-emitting devices with TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/ZnO bilayer as the electron contact layer" }, { "name": "text", "data": " [J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Opt. Lett." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "39" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "):" }, { "name": "text", "data": "426" }, { "name": "text", "data": "-" }, { "name": "text", "data": "429" }, { "name": "text", "data": "." } ], "title": "Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer" } ] } ] }, "response": [], "contributions": [], "acknowledgements": [], "conflict": [], "supportedby": [], "articlemeta": { "doi": "10.37188/CJL.20220002", "clc": [ [ { "name": "text", "data": "TN312.8" } ] ], "dc": [ { "name": "text", "data": "A" } ], "publisherid": "1000-7032(2022)03-0381-07", "citeme": [], "fundinggroup": [ { "lang": "zh", "text": [ { "name": "text", "data": "国家自然科学基金青年基金（61504118）；江苏省自然科学基金青年基金（BK20201064）；江苏省高等学校自然科学研究面上项目（19KJB430040）资助" } ] }, { "lang": "en", "text": [ { "name": "text", "data": "Supported by National Natural Science Foundation of China (61504118); Natural Science Foundation of Jiangsu Province (BK20201064); University Science Research Project of Jiangsu Province (19KJB430040)" } ] } ], "history": { "received": "2022-01-04", "revised": "2022-01-17", "opub": "2022-04-04" }, "copyright": { "data": [], "year": "2022" } }, "appendix": [], "type": "research-article", "ethics": [], "supplementary": [], "journalTitle": "发光学报", "issue": "3", "volume": "43", "originalSource": [] }