氯化锌修饰蓝光量子点发光二极管 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "氯化锌修饰蓝光量子点发光二极管" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "Zinc Chloride Modification of Blue Quantum Dot Light-emitting Diode" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "张", "givenname": "玉玲", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Yu-ling", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "张玉玲(1997-)，女，安徽庐江人，硕士研究生，2019年于安徽工业大学获得学士学位，主要从事量子点发光显示器件的研究。E-mail: ling2643239403@outlook.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623035&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623039&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623042&type=" } ], "data": [ [ { "name": "text", "data": "张玉玲" }, { "name": "text", "data": "(1997-)，女，安徽庐江人，硕士研究生，2019年于安徽工业大学获得学士学位，主要从事量子点发光显示器件的研究。E-mail: " }, { "name": "text", "data": "ling2643239403@outlook.com" } ] ] } ], "email": "ling2643239403@outlook.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "肖", "givenname": "毅", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XIAO", "givenname": "Yi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "王", "givenname": "俊杰", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Jun-jie", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "罗", "givenname": "宇", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LUO", "givenname": "Yu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "郭", "givenname": "标", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "GUO", "givenname": "Biao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "李", "givenname": "丹阳", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "LI", "givenname": "Dan-yang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "许", "givenname": "伟", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "XU", "givenname": "Wei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "彭", "givenname": "俊彪", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "PENG", "givenname": "Jun-biao", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "*Corresponding Author, E-mail: psjbpeng@scut.edu.cn", "data": [ { "name": "text", "data": "*Corresponding Author, E-mail: psjbpeng@scut.edu.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "彭俊彪(1962-)，男，山东宁津人，博士，教授，1993年于中国科学院长春物理研究所获得博士学位，主要从事发光显示器件与物理的研究。E-mail: psjbpeng@scut.edu.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623046&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623052&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623058&type=" } ], "data": [ [ { "name": "text", "data": "彭俊彪" }, { "name": "text", "data": "(1962-)，男，山东宁津人，博士，教授，1993年于中国科学院长春物理研究所获得博士学位，主要从事发光显示器件与物理的研究。E-mail: " }, { "name": "text", "data": "psjbpeng@scut.edu.cn" } ] ] } ], "email": "psjbpeng@scut.edu.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": ". 华南理工大学　发光材料与器件国家重点实验室，广东　广州　510641", "data": [ { "name": "text", "data": ". 华南理工大学　发光材料与器件国家重点实验室，广东　广州　510641" } ] }, { "lang": "en", "label": "1", "text": "State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, Guangdong", "data": [ { "name": "text", "data": "State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, Guangdong" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "采用氯化锌(ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")修饰镉基CdSe/ZnS蓝光量子点(B-QD)薄膜，发现与量子点表面结合力更强的ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "能够部分取代量子点长链配体油酸，有效钝化量子点表面缺陷，提高薄膜的荧光量子效率(PLQY)。此外，由于ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "具有偶极作用，使量子点真空能级提高0.2 eV，一方面可改善电子和空穴载流子注入平衡，另一方面可有效降低发光器件的启亮电压，提高器件的发光寿命。这种无机配体修饰量子点薄膜的方法可能为解决蓝光量子点发光二极管(B-QLEDs)因空穴注入困难和量子点表面缺陷导致器件性能不高的问题提供一个有效思路。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Inorganic zinc chloride(ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ") was used as a ligand to modify cadmium-based blue quantum dot(B-QD) film. In this case, ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " can partially replace the original long-chain ligand of oleic acid(OA) because of a strong interaction between ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " and QDs. The replaced ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " can passivate the surface defects of QDs to enhance the photoluminescence quantum yield(PLQY) of the QDs film. Meanwhile, the strategy can significantly improve carrier transport capacity and pull up the vacuum energy level of the QDs film by 0.2 eV due to ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " dipoles, which may improve electron and hole injection balance, reduce the turn-on voltage of EL devices, and extend device lifetime as well. This method might provide an effective way to improve performances of blue quantum dot light-emitting diodes." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "氯化锌修饰层" } ], [ { "name": "text", "data": "无机配体取代" } ], [ { "name": "text", "data": "蓝光量子点发光二极管" } ], [ { "name": "text", "data": "载流子平衡" } ], [ { "name": "text", "data": "效率滚降减缓" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "zinc chloride modification" } ], [ { "name": "text", "data": "inorganic ligand exchange" } ], [ { "name": "text", "data": "blue quantum dot light-emitting diodes" } ], [ { "name": "text", "data": "balanced carriers" } ], [ { "name": "text", "data": "efficiency roll-off improvement" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "胶体量子点(QDS)具有优异的发光特性，其发光波长可通过粒子尺寸进行调谐，发射光谱窄，色纯度高，应用前景广阔，在学术界、产业界受到极大关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } } ], "rid": [ "R1", "R2" ], "text": "1-2", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。目前，红光和绿光量子点发光二极管(QLED)的外量子效率(EQE)均超过20%，文献报道的器件寿命也高达百万小时" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } } ], "rid": [ "R3", "R4" ], "text": "3-4", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；然而，虽然蓝光QLED(B-QLED)的最高效率也已经达到20%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，但大部分文献报道的效率都不超过10%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R5", "R6", "R7", "R8", "R9", "R10", "R11", "R12", "R13", "R14", "R15" ], "text": "5-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，稳定性远远达不到应用要求，因此，高效率和高稳定性的蓝光量子点器件仍需要进一步研究。蓝光QDs的溶液荧光量子效率(PLQY)虽然可达到约80%，但是用于电致发光，其所具有的宽带隙、深最高占据分子轨道(HOMO)特性，难以找到适配的高迁移率和深HOMO的空穴传输材料(HTLs)来设计可实现载流子平衡的高效率发光器件，导致B-QLED的发光效率和稳定性受到较严重影响。目前常用的具有较深HOMO的HTLs，如聚乙烯基咔唑(PVK)、4,4'-N,N'-二咔唑联苯(CBP)等，要么空穴传输性差，要么成膜性不好，严重影响器件的发光性能，如启亮电压较高、漏电流较大等。要设计载流子注入平衡的量子点蓝光器件，另外可行的方法是通过调控QDs的配体，提高蓝光量子点的HOMO能级。实际上，量子点能级调控可以通过表面配体诱导偶极子来实现" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，通过改变与QDs表面结合的化学基团的特性和配体的偶极矩来改变表面偶极子的强度，从而调控量子点的真空能级，这在量子点太阳电池领域有较多的研究" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R17", "R18", "R19" ], "text": "17-19", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而在量子点发光领域，也涉及到相关研究。2016年，成均馆大学Chae等用苯硫醇对绿光QDs进行配体交换，显著提高了薄膜PLQY，通过配体偶极作用使空穴注入势垒降低0.3 eV，制备的正装器件效率可以提高80%" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";2019年，他们又用具有负偶极矩的苯硫酚衍生物对绿光QDs进行配体交换，使QDs/乙氧基化聚乙烯亚胺(PEIE)与聚双(4-苯基)(4-丁基苯基)胺(P-TPD)间的HOMO势垒降低了0.3 eV，制备出了效率高达24.8%的倒装QLED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";2018年，多伦多大学Sargent等采用亚硫酰氯取代绿光QDs配体，制备出的倒装QLED的亮度达460 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；此外，有研究显示，配体的修饰除了可调控QDs的能级外，还可以钝化缺陷。2020年，韩国Kim等用氯化锌对蓝光ZnTeSe/ZnSe/ZnS QDs分别进行了液相配体取代和固相薄膜配体取代，修饰后的QDs都有更好的缺陷钝化效果和电荷传输能力，大大提高了QLED的性能，获得了超过20%的无镉B-QLEDs的效率" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；同年，TCL钱磊等将油酸锌配体运用到R-QDs的液相配体交换中，具有双离子钝化效果的油酸锌不仅提高了QDs墨水的光致发光性能，还显著提升了喷墨打印器件的稳定性，制备了最高效率为16.6%和最长寿命172万小时的喷墨打印QLED" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由此可见，配体修饰对提升QD器件性能，特别是蓝光QD器件性能起到了重要作用。尽管如此，对蓝光QD的研究相对较少。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "文献表明" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "25", "type": "bibr", "rid": "R25", "data": [ { "name": "text", "data": "25" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，小尺寸的金属卤化物配体可以克服长链有机配体的空间位阻效应，更易到达量子点表面未配位的位点，且氯化物在醇溶剂当中的溶解性较好。所以本文采用无机盐卤化物ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰B-QDs薄膜的方法，不仅可以有效钝化QDs的表面缺陷，增强薄膜的PLQY，还能够改变与QDs表面的偶极相互作用，提升B-QDs的HOMO能级，改善空穴的注入能力。利用这一思想，得到了较低启亮电压、亮度提升两倍、效率滚降明显减缓的B-QLED，这为解决B-QLED因空穴注入困难所导致的器件性能不良问题提供了一个有效的研究思路。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "实验材料" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "实验中的氧化锌(ZnO)纳米颗粒购买于广东省普加福光电公司，溶解于乙醇中，浓度为30 mg/mL;ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "购买于阿拉丁化学试剂公司，溶解于乙醇溶剂中；分散在正辛烷中的蓝光QDs购买于苏州星硕纳米科技有限公司，其核壳结构为CdSe/ZnS，表面主要配体为油酸，浓度为20 mg/mL；聚9,9-二辛基芴-co-N-(4-丁基苯基)二苯胺(TFB)购自American Dye Source，溶解在氯苯中，浓度为8 mg/mL；聚(3,4-乙烯二氧噻吩)∶聚苯乙烯磺酸盐(PEDOT∶PSS)购买于Heraeus Electronic Materials Division；图案化的氧化铟锡(ITO)购买于深圳南玻集团；无水乙醇(EtOH)、纯度为99.8%的异丙醇、正辛烷和氯苯等溶剂均购买于Sigma-Aldrich。以上材料均直接使用，未做其他处理。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "器件制备" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "本文制备的正装对比器件结构分别为ITO/PEDOT∶PSS/TFB/QD/ZnO/Al和ITO/PEDOT∶PSS/TFB/QD(ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "处理)/ZnO/Al。具体的制备步骤为：ITO玻璃衬底依次用四氢呋喃、异丙醇、洗液、去离子水、去离子水和异丙醇混合溶剂在超声池中超声清洗10 min，再转移至烘箱中烤干，并在器件制备前进行10 min的UV预处理；接着在空气中的ITO基板上旋涂厚度约45 nm的PEDOT∶PSS，在150 ℃条件下退火15 min；之后将基板转移至手套箱中，将溶解在氯苯中的TFB溶液旋涂在PEDOT∶PSS上，薄膜厚度约为40 nm，用150 ℃退火15 min；待其冷却至室温后，再旋涂上QDs溶液，约18 nm，也随即在手套箱中用95 ℃退火10 min；之后用ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "溶液滴加至铺满整个QD层上，等候30 s，随即用1 000 r/min的低速旋转40 s，紧接着用无水乙醇以1 000 r/min的低速再旋涂一次，清洗掉多余的ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，并在手套箱中用95 ℃退火10 min后，待其冷却；再旋涂约40 nm厚的ZnO纳米颗粒，95 ℃退火10 min冷却后，转移至蒸镀舱，在1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa的真空度下蒸镀100 nm厚度的Al，蒸镀结束后，用树脂和玻璃盖板进行UV光照5 min固化封装(这里将未经处理的和经ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "处理的QDs分别定义为OA-QDs和ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs)。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.3" } ], "title": [ { "name": "text", "data": "器件表征" } ], "level": "2", "id": "s2c" } }, { "name": "p", "data": [ { "name": "text", "data": "器件的光电性能由四合一数字源表(Keithley 2400)和分光色度计(CS-200)测量记录，在一定的电压范围内，采集电流和亮度等信号。器件的EL光谱由微型光纤光谱仪测量，薄膜的吸收谱由紫外-可见分光光度计来表征，薄膜的PLQY由绝对量子效率测试仪测量获得，PL光谱由光纤光谱仪测试获得，薄膜中元素的种类和含量变化由X射线光电子能谱仪表征(XPS)，薄膜中基团的种类和变化由傅里叶红外光谱仪的吸收模式(FTIR)表征，薄膜电势的变化是由开尔文探针测量获得的。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰对B-QDs薄膜光学性能的影响" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "根据文献报道，用体积小而导电性更好的无机盐卤化物ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "部分取代量子点表面长链有机油酸配体，可能会导致量子点发生聚集" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，影响量子点溶液的分散性，进而影响量子点成膜质量。所以本文采用固相配体交换方法避免量子点在配体交换过程中发生聚集，即对量子点薄膜进行ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰，具体修饰步骤如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "。为了证明该修饰方法不会对量子点特性产生影响，对修饰前后的量子点薄膜测试了紫外-可见光吸收光谱，从" }, { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "可以看出，修饰后的薄膜吸收谱的吸收带边并未发生变化，在477 nm处仍有较为清晰的吸收边，光学带隙保持约为2.6 eV。QDs溶液的PLQY为73%，而薄膜的PLQY下降到50%，说明QDs表面部分有机配体发生脱落，产生了缺陷态，如" }, { "name": "xref", "data": { "text": "图2(b)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)" } ] } }, { "name": "text", "data": "；乙醇溶剂清洗(EtOH-rinsed)后的QDs薄膜的PLQY仍旧保持为50%，说明乙醇清洗未对量子点薄膜发光产生影响，而ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "乙醇溶液修饰的ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs薄膜，其PLQY增加到了60%，说明ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "既可以钝化QDs薄膜由于配体脱落产生的缺陷，又因与QDs表面结合力更强，在薄膜加热退火过程中可能会进一步减少QDs表面缺陷。" }, { "name": "xref", "data": { "text": "图2(c)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(c)" } ] } }, { "name": "text", "data": "表明，QDs溶液、OA-QDs、EtOH-rinsed QDs以及ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs薄膜的荧光光谱都是典型高斯对称的，半峰宽约为24 nm。其中溶液的PL峰位于460 nm,OA-QDs和EtOH-rinsed QDs薄膜的PL发射峰位于462 nm,ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs薄膜的PL光谱红移到了464 nm，这可能是由于从溶液态到薄膜态，以及ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "对原长链配体的部分取代，使QDs之间的距离变短，而相邻QDs间的电子耦合强度是随着点间距的减小成指数倍增的，QDs波函数的扩展就会减轻量子限制效应，使得电子可在不同粒径大小的QDs内辐射复合，发生荧光共振能量转移(Fluorescence resonance energy transfer,FRET)，从而导致PL红移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "26", "type": "bibr", "rid": "R26", "data": [ { "name": "text", "data": "26" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。通过比较三种薄膜在同一紫外光照射下的发光照片(" }, { "name": "xref", "data": { "text": "图2(c)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(c)" } ] } }, { "name": "text", "data": ")，可以明显地看出薄膜c的蓝光强度相较于前两者(薄膜a和b)更强。综上所述，通过采用与QDs表面结合力更强的无机盐ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "进行修饰，能够钝化蓝光QDs的表面缺陷，使薄膜的光致发光性能得到提升。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰蓝光量子点薄膜的工艺步骤。步骤①②:QDs溶液在TFB衬底上旋涂成膜，并加热退火；步骤③④：适量ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "溶液滴加至覆盖住QDs薄膜，并静置30 s后旋涂；步骤⑤：适量乙醇滴加覆盖住步骤④中的薄膜并立即旋涂；步骤⑥：薄膜加热退火。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Schematic illustration of ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " modification process. Step 1 and 2: QDs solution was spin-coated on the TFB substrate, and cooled after being annealed. Step 3 and 4: the appropriate amount of ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " solution was coated on the QDs film and spinned after 30 s. Step 5: ethanol was spin-coated on the film immediately in step 4. Step 6: the film was annealed and cooled." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623062&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623072&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623066&type=" } ] } }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "不同薄膜样品的紫外-可见吸收光谱(a)、PLQY(b)、PL及紫外光激发下实际样品的发光对比图(c)。薄膜a:quartz/QDs；薄膜b:quartz/EtOH-rinsed QDs；薄膜c:quartz/ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-modified QDs。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "(a)UV-visible absorption spectra of several films.(b)PLQY. (c)PL measurement and actual luminescence under UV excitation of various films. Film a: quartz/QDs. Film b: quartz/EtOH-rinsed QDs. Film c: quartz/ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-modified QDs." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623076&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623085&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623081&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰对B-QDs表面配体的影响" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "根据文献报道" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "27", "type": "bibr", "rid": "R27", "data": [ { "name": "text", "data": "27" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，溶解在较强极性溶剂中的金属卤化物盐修饰QDs可使金属卤化物解离，卤素取代部分原油酸配体，配位到QDs表面的正价金属悬挂键上，如" }, { "name": "xref", "data": { "text": "图3(a)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)" } ] } }, { "name": "text", "data": "。为验证该推测，对修饰前后的QDs薄膜进行了XPS测试分析，如" }, { "name": "xref", "data": { "text": "图3(c)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(c)" } ] } }, { "name": "text", "data": "所示，为QDs薄膜的Zn 2p" }, { "name": "sub", "data": [ { "name": "text", "data": "3/2" } ] }, { "name": "text", "data": "轨道的XPS谱图，相比于修饰前的薄膜，修饰后的轨道电子束缚能增加了0.3 eV，说明Zn接受外来电子的密度减少(ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "中的Cl元素电负性小于OA中的O)使得内层电子受屏蔽作用减弱，抵消的原子核的库伦作用变弱，表现在XPS上即为峰位向高结合能方向移动。为进一步证明该修饰可发生配体取代的过程，进行了FTIR测试分析(" }, { "name": "xref", "data": { "text": "图3(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(b)" } ] } }, { "name": "text", "data": ")，发现在OA-QDs薄膜的2 911 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和2 847 cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "处检测到较强的亚甲基振动峰，这是表面原配体油酸长链中的基团" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；而修饰后的薄膜并没有检测到同样强度的峰，表明ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰对QDs表面配体所产生的影响是：在步骤④中一部分油酸配体脱落溶于乙醇后，在步骤⑤中因旋涂离心力而去除掉其中绝大部分，而剩余小部分的油酸配体虽脱落于量子点表面，但仍吸附在薄膜上。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "(a)ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "配体取代示意图；(b)不同薄膜的傅里叶红外变换吸收光谱；(c)Zn 2p 轨道的XPS高分辨率扫描谱；(d)S 2p的XPS高分辨率扫描谱；(e)O 1s的XPS高分辨率扫描谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "(a)Schematic illustration of ligand exchange of ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " modification. (b)FTIR spectra. (c)Zn 2p core level spectra. (d)S 2p core level spectra. (e)O 1s core level spectra of two different films." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623088&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623093&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623090&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "为了定量说明配体取代的比例，用灵敏度因子法" }, { "name": "italic", "data": [ { "name": "text", "data": "N=I/F" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "AS" } ] }, { "name": "text", "data": "来计算XPS测试中O元素(原配体OA中的O)含量的变化，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "I" } ] }, { "name": "text", "data": "是谱峰面积，" }, { "name": "italic", "data": [ { "name": "text", "data": "F" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "AS" } ] }, { "name": "text", "data": "是元素的灵敏度因子。这里以ZnS中的S元素含量为基准，计算得出修饰前的薄膜S/O的原子含量比是1/0.71，修饰后变为1/0.57(" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": ")，说明大约有20%的表面原配体OA脱落了，如" }, { "name": "xref", "data": { "text": "图3(d)、(e)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(d)、(e)" } ] } }, { "name": "text", "data": "。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "两种薄膜样品中S/O的含量比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "The content ratio of S and O elements in the films" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Samples" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "O 1s的谱峰面积/(cps·eV)" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "S 2p的谱峰面积/(cps·eV)" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "S/O" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "QDs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "33 548.96" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "33 800.06" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1/0.71" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "35 948.18" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "53 840.67" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1/0.57" } ] } ] ], "foot": [] } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰对B-QDs能级的影响" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "通过对ITO衬底样品、OA-QDs和ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs薄膜样品进行开尔文探针的电势测量，得到ITO衬底的电势为286 mV,OA-QDs和ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs薄膜的电势分别为523.4 mV和737.7 mV。通常文献中把ITO的功函数定义为4.7 eV" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "28", "type": "bibr", "rid": "R28", "data": [ { "name": "text", "data": "28" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，所以OA-QDs和ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs薄膜相对应的功函数分别为4.9 eV和5.2 eV，可见ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "改变了QDs薄膜表面的能级，将真空能级上拉了0.2 eV，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示。为了进一步研究不同薄膜深度的电势变化情况，用电子束轰击深度分别为10,16,22 nm(" }, { "name": "xref", "data": { "text": "表2", "type": "table", "rid": "T2", "data": [ { "name": "text", "data": "表2" } ] } }, { "name": "text", "data": ")，仍以S元素含量为参考基准，计算S/Cl元素的含量比例在不同深度处分别为1/0.19,1/0.11和1/0.10；另外还计算了浓度分别为0.5,0.3,0.1 mol/L的ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰的QDs深度在10 nm处S/Cl含量比，如" }, { "name": "xref", "data": { "text": "表3", "type": "table", "rid": "T3", "data": [ { "name": "text", "data": "表3" } ] } }, { "name": "text", "data": "所示，分别为1/0.20,1/0.09,1/0.08，而这三种薄膜样品测试的电势都同样为737.7 mV。上述计算结果表明，0.5 mol/L ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰的18 nm厚的QDs薄膜的能级都提高了0.2 eV，说明ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "配位深入到QDs层内，可有效降低与 TFB之间的空穴注入势垒。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "正装器件结构及能级变化示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Illustration of device structure and energy diagram" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623094&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623098&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623096&type=" } ] } }, { "name": "table", "data": { "id": "T2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表2" } ], "title": [ { "name": "text", "data": "0.5 mol/L-ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰的QDs薄膜在不同刻蚀深度的S/Cl含量比" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 2" } ], "title": [ { "name": "text", "data": "The S/Cl content ratios of 0.5 mol/L-ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": " modified films of different etch depth" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "刻蚀深度/nm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "S/Cl" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "10" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1/0.19" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "16" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1/0.11" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "22" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1/0.10" } ] } ] ], "foot": [] } ] } }, { "name": "table", "data": { "id": "T3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表3" } ], "title": [ { "name": "text", "data": "不同浓度ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰的QDs薄膜在刻蚀深度为10 nm的S/Cl含量比和功函数" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 3" } ], "title": [ { "name": "text", "data": "The S/Cl content ratios and work functions of several concentrations modified films at the depth of etching 10 nm" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "/(mol·L" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "S/Cl" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "WF/eV" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.5" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1/0.20" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "5.15" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.3" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1/0.09" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "5.15" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "0.1" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1/0.08" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "5.15" } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "根据文献报道，QDs真空能级的偏移主要是两种偶极作用的总和" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "：一个是QDs壳表面的原子与配位配体之间的偶极，另一个是配体自身表现出的偶极。前者的偶极方向是从带正电的金属指向带负电的配体，而后者的偶极方向取决于配体的化学结构和键合方向。与体积较大的油酸硫醇类有机配体相比，无机卤化物配体缺少与QDs表面-配体间偶极相反方向的偶极，这也是为什么在之前的研究当中发现这类卤化物的配体能够使真空能级上移" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "," }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "29", "type": "bibr", "rid": "R29", "data": [ { "name": "text", "data": "29" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "30", "type": "bibr", "rid": "R30", "data": [ { "name": "text", "data": "30" } ] } } ], "rid": [ "R29", "R30" ], "text": "29-30", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。在本文中，Cl在ZnS表面与Zn配位" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } } ], "rid": [ "R23", "R24" ], "text": "23-24", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，钝化S位点，由于Cl配体自身偶极的缺失，导致真空能级整体表现为向上偏移(" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": ")。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.4" } ], "title": [ { "name": "text", "data": "ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰对B-QLED性能的影响" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "本文制备了OA-QDs和ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs两种对比条件的正装器件，如" }, { "name": "xref", "data": { "text": "图5(a)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(a)" } ] } }, { "name": "text", "data": "。TFB的HOMO能级仅有5.3 eV，与B-QDs的深HOMO能级相差1.4 eV，这也是蓝光QLED中空穴注入的难题；而上述ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "对QDs层的能级上拉作用会减小空穴注入的势垒，所以预期会对发光器件性能有一定的改善作用。从" }, { "name": "xref", "data": { "text": "图5(b)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(b)" } ] } }, { "name": "text", "data": "看出，ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs器件的漏电流密度减小了一个数量级，启亮之后电流密度增长迅速，在3~4 V区间内，最大电流密度比OA-QDs器件的高一个数量级，同时亮度也相应地增加。这是因为修饰后QDs表面配体的空间位阻降低，绝缘有机长链配体的减少及体积小的无机ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "配体的补充配位，使载流子在QDs层的传输特性都有所增强，表现为器件的启亮电压从3.2 V降低到2.8 V，最大亮度从2 004 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "增加至4 003 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。" }, { "name": "xref", "data": { "text": "图5(c)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(c)" } ] } }, { "name": "text", "data": "表明，器件的效率滚降有所减缓，如OA-QDs器件的最大EQE 2%在230 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的低亮度下达到，随后在2 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "亮度左右效率滚降至最大EQE的45%；而ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs器件在230 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的低亮度下也同样能达到OA-QDs器件的最大EQE值，在500 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的亮度处，效率进一步增长至2.2%，且在2 000 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "亮度时，效率滚降为最大EQE的86%。由此可见，器件当中的电子空穴是更加平衡的，推测是空穴注入与传输的增强带来的积极效应。为进一步验证这个推测，制备了单电子和单空穴的器件，如" }, { "name": "xref", "data": { "text": "图5(d)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(d)" } ] } }, { "name": "text", "data": "。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "(a)正装器件结构ITO/PEDOT∶PSS/TFB/QDs/ZnO/Al示意图；(b)器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V-L" } ] }, { "name": "text", "data": "特性曲线；(c)器件EQE与亮度的关系曲线；(d)单空穴ITO/PEDOT∶PSS/TFB/QDs/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Al与单电子器件ITO/ZnO/QDs/ZnO/Al的" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "特性；(e)器件亮度衰减到初始一半的寿命；(f)ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs器件在不同电流下的EL光谱及发光照片。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "(a)The device with traditional structure ITO/PEDOT∶PSS/TFB/QDs/ZnO/Al. (b)" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V-L" } ] }, { "name": "text", "data": " characteristic of devices. (c)The dependence of EQE on the luminance. (d)The " }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": " characteristics of HOD∶ITO/PEDOT∶PSS/TFB/QDs/MoO" }, { "name": "sub", "data": [ { "name": "text", "data": "3" } ] }, { "name": "text", "data": "/Al and EOD∶ITO/ZnO/QDs/ZnO/Al. (e)The lifetime of devices. (f)EL spectra under different current and luminous picture." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623099&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623103&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=24623101&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "在ZnO作为ETL的QLEDs中，普遍认为电子是器件中的多数载流子，单载流子器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "特性也表明QDs无论是否经过ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的修饰，电子电流密度都大于空穴电流密度，但是ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs的单载流子器件中的空穴与电子电流密度差距相比较OA-QDs单载流子器件的要小。如在4 V电压下，ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs器件的空穴和电子电流密度分别为10.8 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和157.7 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，而OA-QDs器件的空穴和电子电流密度分别为0.7 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "和38.7 mA/cm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "，前者差距为15倍，而后者差距55倍。而且在5 V电压以后，ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs器件的空穴电流密度仍呈现疾升状态，但在OA-QDs器件中空穴电流密度的增长已经趋于饱和，这也说明在高电压下保持增长的空穴电流密度对于器件高效率的维持起着很重要的作用。如" }, { "name": "xref", "data": { "text": "图5(e)、(f)", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5(e)、(f)" } ] } }, { "name": "text", "data": "所示，在100 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的初始亮度下，OA-QDs器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "约为7.8 min；而在500 cd/m" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "的初始亮度下，ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "可延长至18 min。也测试了ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs器件分别在0.1,0.3,0.5 mA电流下的EL发射光谱，发射峰位于465 nm，发光照片显示均匀的EL发光，器件性能汇总如" }, { "name": "xref", "data": { "text": "表4", "type": "table", "rid": "T4", "data": [ { "name": "text", "data": "表4" } ] } }, { "name": "text", "data": "所示。然而，相比于文献报道中类似器件结构的B-QLEDs" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "31", "type": "bibr", "rid": "R31", "data": [ { "name": "text", "data": "31" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，器件的效率和寿命都偏低。众所周知，蓝光器件的效率和寿命与量子点材料本身的效率、稳定性及器件中的电荷平衡关系密切" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "32", "type": "bibr", "rid": "R32", "data": [ { "name": "text", "data": "32" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "33", "type": "bibr", "rid": "R33", "data": [ { "name": "text", "data": "33" } ] } } ], "rid": [ "R32", "R33" ], "text": "32-33", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，从" }, { "name": "xref", "data": { "text": "图2(c)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(c)" } ] } }, { "name": "text", "data": "中薄膜PL发光照片可以看出，其发光强度较弱，且在外界环境(如水氧)影响下，紫外光照射，发光强度会逐渐衰减，这可能与配体脱落引入的缺陷以及薄膜QDs之间的能量转移有关。而从器件来看，正装器件结构的电子传输层使用的是ZnO，器件中载流子的不平衡导致QDs与HTL界面处的电子堆积不仅会增加QDs层的非辐射复合，降低发光效率和亮度，而且对HTL的稳定性也有一定的影响。尽管ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "配体修饰可以有效减少QDs缺陷，降低激子的非辐射复合，但对减弱薄膜由于密堆积QDs之间的能量转移和ZnO对B-QDs的严重荧光猝灭，还有较大局限。因此，高效稳定的B-QLEDs还需要开发高效稳定的B-QDs和与其适配的电子传输层材料。" } ] }, { "name": "table", "data": { "id": "T4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表4" } ], "title": [ { "name": "text", "data": "两种B-QLEDs的性能汇总" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 4" } ], "title": [ { "name": "text", "data": "Summary of device performance of the two B-QLEDs" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "Devices" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "V" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "on" } ] }, { "name": "text", "data": "/V" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "LE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "/(cd·A" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE" }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "max" } ] }, { "name": "text", "data": "/(cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "T" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "50" } ] }, { "name": "text", "data": "/h@100 cd·m" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EL/nm" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "OA-QDs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3.2" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.4" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2.0" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "2 004" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "0.1" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "465" } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "-QDs" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "2.8" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1.6" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "2.2" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "4 263" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "5.3" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "465" } ] } ] ], "foot": [] } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文采用无机配体ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "修饰B-QDs薄膜，使ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "约20%部分取代QDs表面的长链油酸配体，钝化了QDs从溶液态到薄膜态由于油酸配体脱落导致的缺陷，从而提高了B-QDs薄膜的PLQY；且ZnCl" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "配位深入到QDs薄膜内，配体偶极的变化使得QDs真空能级提升0.2 eV，器件的电子和空穴注入平衡得以改善，启亮电压大幅降低，发光寿命也得以延长。该方法对B-QLED 的性能提升有一定帮助，这将为改善B-QLED性能提供参考。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址：http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210367." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献：" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "DAI X L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "DENG Y Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "PENG X G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Quantum-dot light-emitting diodes for large-area displays: towards the dawn of commercialization" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Mater" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "29" }, { "name": "text", "data": "(" }, { "name": "text", "data": "14" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1607022-1-22" }, { "name": "text", "data": "." } ], "title": "Quantum-dot light-emitting diodes for large-area displays: towards the dawn of commercialization" } ] }, { "id": "R2", "label": "[2]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "QI H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG S J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JIANG X H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Research progress and challenges of blue light-emitting diodes based on Ⅱ-Ⅵ semiconductor quantum dots" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Mater. Chem" } ] }, { "name": "text", "data": ". C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "30" }, { "name": "text", "data": "):" }, { "name": "text", "data": "10160" }, { "name": "text", "data": "-" }, { "name": "text", "data": "10173" }, { "name": "text", "data": "." } ], "title": "Research progress and challenges of blue light-emitting diodes based on Ⅱ-Ⅵ semiconductor quantum dots" } ] }, { "id": "R3", "label": "[3]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "SONG J J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG O Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHEN H B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Over 30% external quantum efficiency light-emitting diodes by engineering quantum dot-assisted energy level match for hole transport layer" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Funct. Mater" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "29" }, { "name": "text", "data": "(" }, { "name": "text", "data": "33" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1808377-1-9" }, { "name": "text", "data": "." } ], "title": "Over 30% external quantum efficiency light-emitting diodes by engineering quantum dot-assisted energy level match for hole transport layer" } ] }, { "id": "R4", "label": "[4]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "LI X Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIN Q L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SONG J J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Quantum-dot light-emitting diodes for outdoor displays with high stability at high brightness" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Opt. Mater" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1901145-1-9" }, { "name": "text", "data": "." } ], "title": "Quantum-dot light-emitting diodes for outdoor displays with high stability at high brightness" } ] }, { "id": "R5", "label": "[5]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "WANG L S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIN J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HU Y S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Blue quantum dot light-emitting diodes with high electroluminescent efficiency" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Appl. Mater. Interfaces" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "44" }, { "name": "text", "data": "):" }, { "name": "text", "data": "38755" }, { "name": "text", "data": "-" }, { "name": "text", "data": "38760" }, { "name": "text", "data": "." } ], "title": "Blue quantum dot light-emitting diodes with high electroluminescent efficiency" } ] }, { "id": "R6", "label": "[6]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "QIAN L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHENG Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "XUE J G" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Photonics" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2011" }, { "name": "text", "data": ", " }, { "name": "text", "data": "5" }, { "name": "text", "data": "(" }, { "name": "text", "data": "9" }, { "name": "text", "data": "):" }, { "name": "text", "data": "543" }, { "name": "text", "data": "-" }, { "name": "text", "data": "548" }, { "name": "text", "data": "." } ], "title": "Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures" } ] }, { "id": "R7", "label": "[7]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "WANG F Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JIN S L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SUN W D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Enhancing the performance of blue quantum dots light-emitting diodes through interface engineering with deoxyribonucleic acid" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Opt. Mater" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": "(" }, { "name": "text", "data": "21" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1800578-1-10" }, { "name": "text", "data": "." } ], "title": "Enhancing the performance of blue quantum dots light-emitting diodes through interface engineering with deoxyribonucleic acid" } ] }, { "id": "R8", "label": "[8]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "SUN K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LI F S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZENG Q Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Blue quantum dot light emitting diodes with polyvinylpyrrolidone-doped electron transport layer" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Org. Electron" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "63" }, { "name": "text", "data": ":" }, { "name": "text", "data": "65" }, { "name": "text", "data": "-" }, { "name": "text", "data": "70" }, { "name": "text", "data": "." } ], "title": "Blue quantum dot light emitting diodes with polyvinylpyrrolidone-doped electron transport layer" } ] }, { "id": "R9", "label": "[9]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "SU Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SUN Y Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Origin of positive aging in quantum-dot light-emitting diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Sci" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "5" }, { "name": "text", "data": "(" }, { "name": "text", "data": "10" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1800549-1-7" }, { "name": "text", "data": "." } ], "title": "Origin of positive aging in quantum-dot light-emitting diodes" } ] }, { "id": "R10", "label": "[10]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "LIU Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JIANG C B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SONG C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Highly efficient all-solution processed inverted quantum dots based light emitting diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Nano" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "12" }, { "name": "text", "data": "(" }, { "name": "text", "data": "2" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1564" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1570" }, { "name": "text", "data": "." } ], "title": "Highly efficient all-solution processed inverted quantum dots based light emitting diodes" } ] }, { "id": "R11", "label": "[11]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "HUANG X Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SU S K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SU Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "The influence of the hole transport layers on the performance of blue and color tunable quantum dot light-emitting diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Soc. Inf. Dis" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "26" }, { "name": "text", "data": "(" }, { "name": "text", "data": "8" }, { "name": "text", "data": "):" }, { "name": "text", "data": "470" }, { "name": "text", "data": "-" }, { "name": "text", "data": "476" }, { "name": "text", "data": "." } ], "title": "The influence of the hole transport layers on the performance of blue and color tunable quantum dot light-emitting diodes" } ] }, { "id": "R12", "label": "[12]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "CHEN S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CAO W R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIU T L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "On the degradation mechanisms of quantum-dot light-emitting diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Commun" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "10" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "765-1-9" }, { "name": "text", "data": "." } ], "title": "On the degradation mechanisms of quantum-dot light-emitting diodes" } ] }, { "id": "R13", "label": "[13]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "CHENG T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG F Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SUN W D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-performance blue quantum dot light-emitting diodes with balanced charge injection" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Electron. Mater" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "5" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1800794-1-9" }, { "name": "text", "data": "." } ], "title": "High-performance blue quantum dot light-emitting diodes with balanced charge injection" } ] }, { "id": "R14", "label": "[14]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "LI D Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "BAI J K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG T T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Blue quantum dot light-emitting diodes with high luminance by improving the charge transfer balance" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chem. Commun" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2019" }, { "name": "text", "data": ", " }, { "name": "text", "data": "55" }, { "name": "text", "data": "(" }, { "name": "text", "data": "24" }, { "name": "text", "data": "):" }, { "name": "text", "data": "3501" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3504" }, { "name": "text", "data": "." } ], "title": "Blue quantum dot light-emitting diodes with high luminance by improving the charge transfer balance" } ] }, { "id": "R15", "label": "[15]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "XU J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WANG L X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHAO X L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High-performance blue quantum dot light emitting diode via solvent optimization strategy for ZnO nanoparticles" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nanomaterials" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "11" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "):" }, { "name": "text", "data": "959-1-9" }, { "name": "text", "data": "." } ], "title": "High-performance blue quantum dot light emitting diode via solvent optimization strategy for ZnO nanoparticles" } ] }, { "id": "R16", "label": "[16]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "KIM D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "FU Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Improved electroluminescence of quantum dot light-emitting diodes enabled by a partial ligand exchange with benzenethiol" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nanotechnology" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ", " }, { "name": "text", "data": "27" }, { "name": "text", "data": "(" }, { "name": "text", "data": "24" }, { "name": "text", "data": "):" }, { "name": "text", "data": "245203-1-7" }, { "name": "text", "data": "." } ], "title": "Improved electroluminescence of quantum dot light-emitting diodes enabled by a partial ligand exchange with benzenethiol" } ] }, { "id": "R17", "label": "[17]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "BROWN P R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM D" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LUNT R R" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Energy level modification in lead sulfide quantum dot thin films through ligand exchange" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "ACS Nano" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2014" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "):" }, { "name": "text", "data": "5863" }, { "name": "text", "data": "-" }, { "name": "text", "data": "5872" }, { "name": "text", "data": "." } ], "title": "Energy level modification in lead sulfide quantum dot thin films through ligand exchange" } ] }, { "id": "R18", "label": "[18]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "SANTRA P K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "PALMSTROM A F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TANSKANEN J T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Improving performance in colloidal quantum dot solar cells by tuning band alignment through surface dipole moments" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Phys. Chem" } ] }, { "name": "text", "data": ". C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "119" }, { "name": "text", "data": "(" }, { "name": "text", "data": "6" }, { "name": "text", "data": "):" }, { "name": "text", "data": "2996" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3005" }, { "name": "text", "data": "." } ], "title": "Improving performance in colloidal quantum dot solar cells by tuning band alignment through surface dipole moments" } ] }, { "id": "R19", "label": "[19]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "CHOI J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JO J W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Chloride passivation of ZnO electrodes improves charge extraction in colloidal quantum dot photovoltaics" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Mater" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2017" }, { "name": "text", "data": ", " }, { "name": "text", "data": "29" }, { "name": "text", "data": "(" }, { "name": "text", "data": "33" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1702350-1-5" }, { "name": "text", "data": "." } ], "title": "Chloride passivation of ZnO electrodes improves charge extraction in colloidal quantum dot photovoltaics" } ] }, { "id": "R20", "label": "[20]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "KANG B H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEE J S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LEE S W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Sci. Rep." } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2016" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "34659-1-8" }, { "name": "text", "data": "." } ], "title": "Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices" } ] }, { "id": "R21", "label": "[21]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "MOON H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHAE H" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficiency enhancement of all-solution-processed inverted-structure green quantum dot light-emitting diodes " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " partial ligand exchange with thiophenol derivatives having negative dipole moment" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Adv. Opt. Mater" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1901314-1-5" }, { "name": "text", "data": "." } ], "title": "Efficiency enhancement of all-solution-processed inverted-structure green quantum dot light-emitting diodes via partial ligand exchange with thiophenol derivatives having negative dipole moment" } ] }, { "id": "R22", "label": "[22]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "LI X Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHAO Y B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "FAN F J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Bright colloidal quantum dot light-emitting diodes enabled by efficient chlorination" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Photonics" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "12" }, { "name": "text", "data": "(" }, { "name": "text", "data": "3" }, { "name": "text", "data": "):" }, { "name": "text", "data": "159" }, { "name": "text", "data": "-" }, { "name": "text", "data": "164" }, { "name": "text", "data": "." } ], "title": "Bright colloidal quantum dot light-emitting diodes enabled by efficient chlorination" } ] }, { "id": "R23", "label": "[23]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "KIM T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM K H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KIM S" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Efficient and stable blue quantum dot light-emitting diode" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nature" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "586" }, { "name": "text", "data": "(" }, { "name": "text", "data": "7829" }, { "name": "text", "data": "):" }, { "name": "text", "data": "385" }, { "name": "text", "data": "-" }, { "name": "text", "data": "389" }, { "name": "text", "data": "." } ], "title": "Efficient and stable blue quantum dot light-emitting diode" } ] }, { "id": "R24", "label": "[24]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "XIANG C Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WU L J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LU Z Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "High efficiency and stability of ink-jet printed quantum dot light emitting diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Nat. Commun" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "11" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1646-1-9" }, { "name": "text", "data": "." } ], "title": "High efficiency and stability of ink-jet printed quantum dot light emitting diodes" } ] }, { "id": "R25", "label": "[25]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "KIRKWOOD N" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MONCHEN J O V" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CRISP R W" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Finding and fixing traps in Ⅱ-Ⅵ and Ⅲ-Ⅴ colloidal quantum dots:the importance of Z-type ligand passivation" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Am. Chem. Soc" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "140" }, { "name": "text", "data": "(" }, { "name": "text", "data": "46" }, { "name": "text", "data": "):" }, { "name": "text", "data": "15712" }, { "name": "text", "data": "-" }, { "name": "text", "data": "15723" }, { "name": "text", "data": "." } ], "title": "Finding and fixing traps in Ⅱ-Ⅵ and Ⅲ-Ⅴ colloidal quantum dots:the importance of Z-type ligand passivation" } ] }, { "id": "R26", "label": "[26]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "XU F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "GERLEIN L F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MA X" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Impact of different surface ligands on the optical properties of pbs quantum dot solids" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Materials" } ] }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "8" }, { "name": "text", "data": "(" }, { "name": "text", "data": "4" }, { "name": "text", "data": "):" }, { "name": "text", "data": "1858" }, { "name": "text", "data": "-" }, { "name": "text", "data": "1870" }, { "name": "text", "data": "." } ], "title": "Impact of different surface ligands on the optical properties of pbs quantum dot solids" } ] }, { "id": "R27", "label": "[27]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "CALVIN J J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SWABECK J K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SEDLAK A B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Thermodynamic investigation of increased luminescence in indium phosphide quantum dots by treatment with metal halide salts" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Am. Chem. Soc" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2020" }, { "name": "text", "data": ", " }, { "name": "text", "data": "142" }, { "name": "text", "data": "(" }, { "name": "text", "data": "44" }, { "name": "text", "data": "):" }, { "name": "text", "data": "18897" }, { "name": "text", "data": "-" }, { "name": "text", "data": "18906" }, { "name": "text", "data": "." } ], "title": "Thermodynamic investigation of increased luminescence in indium phosphide quantum dots by treatment with metal halide salts" } ] }, { "id": "R28", "label": "[28]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "ZHONG Z J" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZOU J H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JIANG C B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Improved color purity and efficiency of blue quantum dot light-emitting diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Org. Electron" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2018" }, { "name": "text", "data": ", " }, { "name": "text", "data": "58" }, { "name": "text", "data": ":" }, { "name": "text", "data": "245" }, { "name": "text", "data": "-" }, { "name": "text", "data": "249" }, { "name": "text", "data": "." } ], "title": "Improved color purity and efficiency of blue quantum dot light-emitting diodes" } ] }, { "id": "R29", "label": "[29]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "BÖHM M L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "JELLICOE T C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "RIVETT J P H" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Size and energy level tuning of quantum dot solids " }, { "name": "italic", "data": [ { "name": "text", "data": "via" } ] }, { "name": "text", "data": " a hybrid ligand complex" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Phys. Chem. Lett" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2015" }, { "name": "text", "data": ", " }, { "name": "text", "data": "6" }, { "name": "text", "data": "(" }, { "name": "text", "data": "17" }, { "name": "text", "data": "):" }, { "name": "text", "data": "3510" }, { "name": "text", "data": "-" }, { "name": "text", "data": "3514" }, { "name": "text", "data": "." } ], "title": "Size and energy level tuning of quantum dot solids via a hybrid ligand complex" } ] }, { "id": "R30", "label": "[30]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "HE X M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "HU J C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "TIAN X" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Electronic characteristics of PbS quantum dots passivated by halides on different surfaces" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Appl. Surf. Sci" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "568" }, { "name": "text", "data": ":" }, { "name": "text", "data": "150736" }, { "name": "text", "data": "." } ], "title": "Electronic characteristics of PbS quantum dots passivated by halides on different surfaces" } ] }, { "id": "R31", "label": "[31]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "GUO Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIU B C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "CHEN Z" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Water-passivated ZnMgO nanoparticles for blue quantum dot light-emitting diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "J. Mater. Chem" } ] }, { "name": "text", "data": ". C" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "9" }, { "name": "text", "data": "(" }, { "name": "text", "data": "32" }, { "name": "text", "data": "):" }, { "name": "text", "data": "10381" }, { "name": "text", "data": "-" }, { "name": "text", "data": "10387" }, { "name": "text", "data": "." } ], "title": "Water-passivated ZnMgO nanoparticles for blue quantum dot light-emitting diodes" } ] }, { "id": "R32", "label": "[32]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "吕玫" }, { "name": "text", "data": ", " }, { "name": "text", "data": "张丽" }, { "name": "text", "data": ", " }, { "name": "text", "data": "张彦" }, { "name": "text", "data": ", " }, { "name": "text", "data": "等" }, { "name": "text", "data": ". " }, { "name": "text", "data": "量子点发光二极管稳定性提高策略" }, { "name": "text", "data": "[J]. " }, { "name": "text", "data": "中国光学" }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "14" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "117" }, { "name": "text", "data": "-" }, { "name": "text", "data": "134" }, { "name": "text", "data": "." } ], "title": "量子点发光二极管稳定性提高策略" }, { "lang": "en", "text": [ { "name": "text", "data": "LYU M" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHANG Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Strategies for improving the stability of quantum dots light-emitting diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Chin. Opt" } ] }, { "name": "text", "data": "." }, { "name": "text", "data": ", " }, { "name": "text", "data": "2021" }, { "name": "text", "data": ", " }, { "name": "text", "data": "14" }, { "name": "text", "data": "(" }, { "name": "text", "data": "1" }, { "name": "text", "data": "):" }, { "name": "text", "data": "117" }, { "name": "text", "data": "-" }, { "name": "text", "data": "134" }, { "name": "text", "data": ". " }, { "name": "text", "data": "(in Chinese)" } ], "title": "Strategies for improving the stability of quantum dots light-emitting diodes" } ] }, { "id": "R33", "label": "[33]", "citation": [ { "lang": "zh", "text": [ { "name": "text", "data": "CHEN F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "LIN Q L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "SHEN H B" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". " }, { "name": "text", "data": "Blue quantum dot-based electroluminescent light-emitting diodes" }, { "name": "text", "data": "[J]. " }, { "name": "italic", "data": [ { "name": "text", "data": "Mater. Chem. 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